JPS62278284A - Surface treatment device - Google Patents

Abstract

PURPOSE:To execute a uniform surface treatment without damage by providing a means for ejecting gas to be treated which uniformizes the time from the generation of surface treating seeds until the arrival thereof on a substrate surface to execute uniform surface treatment over the entire surface of the treating surface of the substrate. CONSTITUTION:A radiant gas is introduced through a valve 9 into an electric discharge chamber 1 and high-frequency electric power is impressed from a power source 8 to generate plasma 2. On the other hand, the gas to be treated is ejected from an ejecting member 6 for the gas to be treated moving back and forth in a horizontal direction via a valve 10 onto the substrate 5 in a treatment chamber 3. The generated surface treating seeds are, therefore, sprayed uniformly onto the surface of the substrate 5.

Description

[Detailed Description of the Invention] 3. Detailed Description of the Invention (Field of Industrial Application) The present invention provides an insulating film, a protective film, a semiconductor film,
Manufacturing of thin films such as metal films, etching, surface cleaning,
This invention relates to improvements in surface treatment equipment that performs surface treatments such as surface modification.

(Prior art) Figure 8 shows a conventional surface treatment device using LTE plasma (there are few documents because it is a new technology.
6955. It is a front sectional view of Japanese Patent Application No. 6O-064298). A predetermined discharge electric body is guided from a gas supply device (not shown) through a valve 9 into a discharge chamber 1 made of a quartz tube. (connected to an exhaust pump not shown) exhausts the gas in both chambers to maintain the gas pressure at a predetermined value, and the output voltage of the 13.56 MHz high frequency power source 8 is
A voltage is applied to the discharge coil 7 wound around the discharge chamber 1 to generate plasma 2 of the discharge electric body within the discharge chamber 1 . (Instead of using the discharge coil 7, it is also possible to provide a pair of electrode plates facing each other with the discharge space in between, and apply an alternating voltage such as a high frequency voltage or a direct current voltage between these electrodes to generate plasma discharge.) be.

The frequency of high-frequency electric g8 is 10kHz to several hundred GHz.
However, when using a frequency higher than around IGH, a microwave cavity shaped to wrap around the discharge chamber 1 is used instead of the discharge coil 7 and the pair of electrode plates described above. installed, thereby generating a plasma discharge. ) The substrate holder 4, which holds the substrate 5 in the processing chamber 3, has a heating and cooling mechanism therein that can adjust the temperature of the substrate 5 to a desired value as necessary. (Illustration omitted). Further, from a gas supply system (not shown), the gas to be treated enters the gas introduction ring-shaped tube 120 through the valve 1o, and the gas is ejected toward the upper part of the substrate 5 from a large number of gas blow-off holes 140 inside the ring-shaped tube 12°. ing. This gas to be treated is also exhausted through the aforementioned JI valve 11.

Now, the discharge that occurs in the discharge chamber 1 varies depending on the type of gas in the discharge chamber 1, the pressure of the gas, and the magnitude of the applied high-frequency power, but generally, in areas where the pressure is high and the power is low, a high-frequency glow discharge occurs. In areas where pressure is low and power is high, LTE (Local Thermal Equil
ibrium) plasma discharge (strictly speaking, it is quasi-thermal equilibrium plasma discharge, but the term LTE is commonly used)
becomes. However, the high-frequency glow discharge referred to here is a state in which plasma with not very high brightness is generated almost uniformly and widely within the discharge chamber 1, whereas LTE plasma discharge is a state in which plasma with very high brightness is discharged. This refers to a discharge state in which a glow 200 in the form of a high-frequency glow discharge exists surrounding a locally confined state within the chamber 1.

The apparatus shown in FIG. 8 utilizes this LTE plasma discharge, and reactive active species in the plasma are introduced into the processing chamber 3 from the boundary 150 between the two chambers 1 and 3, which is shaped like a gas introduction ring. Reacts with the gas to be treated ejected from the pipe 120,
The surface of the base 5 is subjected to a predetermined surface treatment.

In this way, when surface treatment is performed using plasma, when the substrate 5 is directly immersed in the plasma, the charged particles in the plasma impact the substrate 5 and cause damage, causing damage to the semiconductor devices fabricated on the substrate 5. Discrepancies such as deterioration of electrical characteristics may occur. This deterioration is caused by, for example, MO
In 3-type semiconductor devices, this is strongly manifested as a variation in vth, and in bipolar-type semiconductor devices, it appears as a variation in hfe. QtAs the degree of integration of semiconductor devices becomes extremely large, or as compound semiconductor devices are manufactured, the impact of minute charged particles will significantly deteriorate electrical characteristics.

In order to eliminate this mismatch, as shown in FIG. 8, gold w450 may be installed at the boundary 150 to which a voltage is applied to prevent or adjust the movement of charged particles. In this case, since the surface treatment is performed only by active species from the plasma and short wavelength light, there are no or fewer charged particles on the treated surface of the substrate 5.

Now, with the surface treatment using the apparatus shown in FIG. 8, damage caused by charged particles can also be controlled as described above.

The film forming apparatus has the advantage of producing high-quality thin films at high speed, but on the other hand, the atmosphere inside the processing chamber is highly active, which causes the following problems depending on the method of introducing the gas to be processed.

(Problems to be Solved by the Invention) In the conventional film forming apparatus, a hollow to-be-treated gas ejection ring 120 is provided to introduce the to-be-treated gas to the upper part of the substrate through the valve 10. A method has been adopted in which a large number of pores 140 for ejecting the gas to be treated are arranged and the distance between the gas to be treated ring 120 and the substrate 5 is kept considerably large in order to ensure uniform thickness distribution of the thin film.

And because of this distance, problems arose.

The reaction proceeds in the space of the processing chamber 3, and when observed using a scanning electron microscope (SEM), the thin film formed on the surface of the substrate 5 is extremely rough and cannot be used as a semiconductor device. It became.

However, when the distance was shortened, the thin film formed was thinner at the center of the surface of the substrate 5 and thicker at the periphery, making it extremely non-uniform. Similar problems occur with equipment for surface treatment other than film formation, such as etching.

(Objective of the Invention) An object of the present invention is to solve the above-mentioned problems and provide an apparatus capable of producing a thin film having excellent uniformity in surface treatment and excellent film quality and uniformity in film thickness.

(Means for solving problems) After investigating the cause of the above-mentioned problem, we found the following.

That is, taking the thin film forming apparatus as an example below, the reactive active species and/or the left alone (hereinafter simply referred to as emitted matter) released from the discharge chamber 1 into the processing chamber 3 are extremely active, so the ejection ring The gas to be treated ejected from the pores 140 of 120 creates surface treatment species (thin film generation species here) in a very short time, but this surface treatment species is also highly active and instantly removes powdery substances. It is made and has a very short lifespan. Therefore, when the distance between the substrate 5 and the ejection ring 120 is short, the thin film formed on the surface of the substrate 5 is dense and thick at the periphery where the surface treatment species are abundant, and at the center where the reaction of the surface treatment species has progressed. As the distance increases, the film quality becomes rougher and thinner, and when the distance is increased, the reaction of the surface treatment species is more advanced.
Although the thickness of the film formed on the surface of the substrate 5 becomes uniform, the quality of the film becomes very rough. Similar inconveniences occur in surface treatments other than thin film formation.

The present invention employs the following as a means to solve this problem.

That is, it includes a discharge chamber provided with an introduction system for a discharge body and a power application means; and a processing chamber provided with an introduction system and an exhaust system for a gas to be treated and in which a substrate is installed.

A surface treatment species is created by irradiating the gas to be treated with reactive active species in the plasma generated in the discharge chamber and/or synchrotron radiation (hereinafter referred to as radiation), and the surface treatment species or In a surface treatment apparatus that performs surface treatment on the substrate using the surface treatment species and the reactive species.

A device provided with a treatment gas jetting means that equalizes the time from generation of the surface treatment species to arrival at the substrate surface and use for treatment over the entire surface of the substrate to be treated. It is.

(Example) Hereinafter, the present invention will be explained in detail based on the drawings.

FIG. 1 is a front sectional view of a surface treatment apparatus according to an embodiment of the present invention. The same members as in FIG. 8 are designated by the same reference numerals and their explanations will be omitted.

In the apparatus shown in FIG. 1, the gas injection ring 1 shown in FIG.
Instead of 20, a spouting member 6 for the gas to be treated is provided. The main parts are shown in detail inside the cylinder 12 as shown in enlarged detail in FIGS. 2 and 3 (A-A sectional view in FIG. has a plurality of small cylindrical projectile passage holes 14 opening toward the surface of the base body 5, and these passage holes 14 are arranged so as to ensure a substantially uniform opening area with respect to the surface of the base body 5. The openings are distributed. A large number of small-diameter ejection pores 13 for the gas to be treated are provided in the side wall of the tube of each passage hole 14 toward the center of the tube. The gas to be treated that has passed through the valve 10 once enters a cavity 15 provided surrounding the cylindrical passage hole 14, and then flows from the ejection pore 13 toward the center of the cylindrical passage hole 14. It is squirted. Further, a grounded wire mesh 16 is provided above the first passage hole 14 to shield charged particles in the plasma. Gold 11i! By applying an appropriate potential to 116, the shielding effect of charged particles can be adjusted, and in some cases, charged particles can be actively taken in.

Note that the ejection member 6 and the wire mesh 16 are made of an insulating material, and the charged particles can also be adjusted magnetically.
1.62 may be installed to provide a magnetic field across the cylindrical passage hole 14.

Arrows 63 indicate the trajectory of charged particles when a magnetic field is applied.

At this time, a curved eaves 64 may be provided to catch the advancing charged particles.

By installing the treatment gas ejection member 6 having the above-mentioned configuration, the problems of the conventional apparatus described above are solved.

The operation of this apparatus will be described below, taking as an example the case of producing a SiN film.

When producing a SiN film, a discharge body N2 is introduced into the discharge chamber 1 through a bulb 9, and high frequency power is applied from a power source 8 to cause discharge and generate plasma. On the other hand, the process gas SiH4 is ejected from the process gas ejection member 6 via the valve 1o, and reacts with the reactive active species of N2 generated in the discharge.

An arrow 51 indicates that the substrate holder 4 reciprocates in the horizontal direction with respect to the jetting member 6 (by a drive device not shown). Through this movement, the generated surface treatment species are evenly distributed on the surface of the substrate 5. It will be distributed.

When the passage holes 14 have a small diameter and are large in number, this reciprocating movement can be omitted.

Now, since the wire mesh 16 is provided, in this device, only the neutral reactive species 24 and the synchrotron radiation pass through the reactive species passage holes 14. Since charged particles do not collide with the substrate 5, a good quality film without damage can be obtained. To describe the process from discharge to thin film deposition in more detail, a large amount of vacuum ultraviolet light (wavelength 200 r+m or less) 23 is emitted from the plasma 2 in an advanced state of excitation, and a large amount of vacuum ultraviolet light (wavelength 200 r+m or less) 23 is emitted from the numerous ejection pores 13. squirted S
1H4 (photodecomposition wavelength of 160 nm or less) absorbs this vacuum ultraviolet light 23 and decomposes it. Although the details of the reaction mechanism have not been clarified, the silane-based active species generated during 1 decomposition, that is, the surface treatment species and the reactive active species of nitrogen diffused from the LTE plasma, are present in the space above the substrate 5 or on the surface of the substrate 5. As a result, a thin film is deposited on the surface of the substrate 5, and although the deposition rate is rather slow, a very high quality thin film can be obtained.

4a and 4b are sectional views corresponding to FIG. 3 of another embodiment of the treatment gas ejection member 6 of the apparatus shown in FIG. In order to maximize this, the cross-sectional shape is fan-shaped, and a large amount of vacuum ultraviolet light is introduced onto the surface of the substrate 5 for effective use.

5 (side cross section) and FIG. 6 (plan view of the opening thereof), a large number of ejection pores are provided on the lower surface of the ejection member 6 rather than from the side wall of the reactive species passage hole 14, and the base 5 The gas to be treated is ejected perpendicularly to the surface. Since the gas reaction space becomes narrower, a high-quality thin film can be obtained. In addition, a high-quality thin film with good uniformity in film thickness and film quality distribution can also be produced using an apparatus equipped with the gas jet ports shown in FIGS. 2 and 3 and in FIGS. 5 and 6. be able to. In addition to the relative movement in the horizontal direction (arrow 51), the relative movement in the vertical direction 5o is also effective, and when used in combination, an even better thin film can be obtained.

Note that when there is sufficient relative movement 53, even if a simple linear thin tube is used as the ejection member 6 as shown in FIG.
A good effect can be obtained.

Although the effectiveness of the present invention has been described above with a focus on the film forming apparatus, the discharge body NF is introduced into the discharge chamber 1 through the valve 9, while the to-be-processed gas 02 is introduced through the valve 10. By introducing this, it is also possible to perform Si etching or surface cleaning on the substrate surface.

Even in this case, the apparatus of the present invention can perform extremely uniform surface treatment with less damage.

(Effects of the Invention) According to the present invention, a surface treatment apparatus that can perform uniform surface treatment with less damage on a semiconductor device can be obtained.

[Brief explanation of the drawing]

FIG. 1 is a front sectional view of a surface treatment apparatus according to an embodiment of the present invention. 7 Figure 4 JA trr real j and fir (no season (p-suko, bo, prisoner. Fig. 4a and 4b are similar sectional views of other embodiments of the ejection member. Figs. 5 and 6 are sectional views of other embodiments of the ejection member, respectively.
Figure, similar to Figure 3. FIG. 8 is a front sectional view of a conventional surface treatment apparatus 61-111 discharge chamber, 2----LTE plasma, 3----processing chamber, 4-111 substrate holder, 5---- Substrate, 6--to-be-treated gas ejection member, 8--J--high frequency power source, 9--discharging body introduction system, 10---1 to-be-treated gas introducing system, 12--1 cylinder, 13---to be treated Gas ejection pore, 14 knee projectile passage hole, 15---one cavity, 16---wire mesh, 51.53---horizontal relative movement. 50---One vertical relative movement, 61.62---
One magnet. Patent applicant: Nichiden Anelva Co., Ltd. Agent: Kenji Murakami] 3 FIG, 5

Claims (7)

[Claims] (1) A discharge chamber provided with an introduction system for a discharge body and a power application means; a processing chamber provided with an introduction system and an exhaust system for a gas to be treated and in which a substrate is installed; plasma generated in the discharge chamber; A surface treatment species is created by irradiating the gas to be treated with reactive active species and/or synchrotron radiation (hereinafter referred to as radiation), and the surface treatment species or the surface treatment species and the reactive active species are In a surface treatment device that performs surface treatment on the surface of the substrate using A surface treatment apparatus comprising a means for ejecting a gas to be treated so as to uniformize the gas over the area. (2) The first aspect of the present invention is characterized in that the processing gas ejection means includes a processing gas ejection member and a substrate holding member that move relative to each other in a direction along the surface of the substrate.
The surface treatment device described in Section 1. (3) Claim 1 or 2, characterized in that the treatment gas jetting means comprises a treatment gas jetting member and a substrate holding member that move relative to each other in a direction perpendicular to the surface of the substrate. surface treatment equipment. (4) The treatment gas ejection means is located between the discharge chamber and the base body, and has a plurality of projectile passage holes and a large number of treatment gas ejection pores provided around the holes. Claim 1, characterized in that it includes a processing gas ejection member;
The surface treatment device according to item 2 or 3. (5) The surface treatment apparatus according to claim 4, wherein the radiation passage hole is provided with means for controlling passage of the charged particles. (6) Control of the passage of charged particles utilizes an electric field created by a wire mesh provided in the passage hole, claim 5.
The surface treatment device described in Section 1. (7) The surface treatment apparatus according to claim 5, wherein the passage of charged particles is controlled using a magnetic field provided across the passage hole.