JPS62276933A - Electronic parts - Google Patents

Abstract

PURPOSE:To ensure the ultrasonic bonding between a lead and a wire by making the lead of an electronic component prolonged at the inside/outside of a package prolonged in the package thicker than the other part. CONSTITUTION:An optoelectronic device for optical communication applies optical communication by lighting a laser light from a laser diode chip 15 and sending the laser light through an optical fiber calbe to a desired position. The part of the lead 6 prolonged in the inside of a main body 7 in the lead 6 prolonged at the inside/outside of the package main body 7 of the device is formed as a thick lead 22 whose diameter is, e.g., 0.75mmphi, and the part projected from the package is formed as a thin lead 23 whose diameter is, e.g., 0.45mmphi. One end of the part 22 is fixed by welding at the ehad 24 of the part 23 whose diameter is 0.75mmphi. A wire 20 connected to a pedestal 36 is connected to the lead 6 by ultrasonic wave wire bonding and since the part 22 is formed thick, the lead 6 is not vibrated even when the wire 20 is connected and sure bonding is applied.

Description

Detailed Description of the Invention 3. Detailed Description of the Invention [Field of Industrial Application] The present invention relates to electronic components, particularly optical communication devices having stable high frequency characteristics and having a structure that allows ultrasonic wire bonding to be performed reliably during assembly. The present invention relates to electronic components such as optoelectronic devices for use.

[Conventional technology]

A semiconductor laser device is used as one of the light sources for optical communication. Regarding this optical communication laser module (semiconductor laser device), for example, rNEC Technical Report JVo1
．． 38, No. 2/1985, P84-P89.

This document describes a laser element that emits laser light, and a Qe that monitors the backward emitted light emitted from this laser element.
-PD (photodetector), thermistor that monitors the temperature of the laser element, and Tala (Beltier element) for temperature adjustment
are built into each package, and an optical fiber is provided to guide the laser beam to the outside of the pancage. The low temperature side of the Bertier element is fixed to the heat sink by solder. Also, the leads that serve as external terminals are of a dual in-line type. As one of the dual in-line lead structures described above, a structure in which the leads are attached through insulating glass to the bottom of the package is described.

[Problem that the invention seeks to solve]

As described in the above-mentioned document, one structure in which the leads are of a dual in-line type is a structure in which leads with a diameter of 0.45 mm are disposed at the bottom of the package.

However, in semiconductor laser devices with this structure, the leads are attached so as to pass through the bottom of the package, so the length of the leads from the bottom of the package to the top of the leads is long, and the wires are attached to the top of the leads. The inventor has revealed that when the leads are connected by ultrasonic wire bonding, the leads vibrate and the wire bonding cannot be performed reliably.

Furthermore, as mentioned above, the inventors have also clarified that as the leads become longer, the parasitic inductance of the leads increases and the characteristics in the high frequency range deteriorate.

An object of the present invention is to provide an electronic component having a structure that allows ultrasonic wire bonding to be performed reliably.

Another object of the present invention is to provide an electronic component having a structure in which parasitic inductance of leads and the like can be reduced.

Another object of the present invention is to provide an electronic component that can be used in a high frequency range.

The above and other objects and novel features of the present invention include:
It will become clear from the description of this specification and the accompanying drawings.

[Means for solving problems]

A brief overview of typical inventions disclosed in this application is as follows.

That is, in the optoelectronic device for optical communication of the present invention, the leads extending inside and outside the package have a diameter of 0.45 m in the lead portion outside the package in accordance with market standards.
However, the leads extending inside the pancage have a diameter of 0.75 mm, which is thicker than the outer part. Also, the laser diode chip disposed inside the package is It is disposed biased so as to be close to the lead side that comes off and is electrically connected to the electrode of the laser diode chip.

[Effect]

According to the above means, in the optoelectronic device for optical communication, since the leads are thick inside the package, the parasitic inductance is reduced, for example, 565
Characteristics in high frequency ranges of Mbit/sec or higher are stable.

Furthermore, the length of the wire connecting the lead and the laser diode chip is shortened because the laser diode chip is arranged close to the lead side, reducing parasitic inductance and improving high frequency characteristics. .

〔Example〕

An embodiment of the present invention will be described below with reference to the drawings.

Here, the drawings will be briefly explained. FIG. 1 is a schematic diagram showing a lead fixing state in an optoelectronic device according to an embodiment of the present invention, FIG. 2 is a perspective view showing the main parts of the optoelectronic device, and FIG. 4
FIG. 5 is a sectional view showing the solder ring at the inner end of the positioning fixing body, FIG. 6 is a perspective view showing the mounting state of the laser diode chip on the subcarrier, and FIG. FIG. 7 is also a schematic diagram showing the fixed state of the optical fiber.

In this example, the wavelength is 1.3 μm or 1°5 μm.
An example in which the present invention is applied to an optoelectronic device as a transmitting device in optical communication that includes a built-in laser diode chip that emits laser light will be described.

Here, the structure of the optoelectronic device of the present invention will be explained.

The optoelectronic device is placed in a pan cage 1 as shown in FIG.
is box-shaped, and has a flange 3 provided with a mounting hole 2 for attaching the package 1 at one end of the pan cage 1, and has a fiber support 4 at the other end to guide an optical fiber cable 5. It has a structure. This optoelectronic device has two rows of leads 6 protruding from the bottom of the package 1, forming a dual in-line structure. The package 1 consists of a box-shaped package body 7 having a flange 3 at one end and an open top, and a package lid 8 that tightly covers the opening of the package body 7. Further, a pedestal 9 is fixed on the bottom of the package body 7, a Beltier element 10 is fixed on the pedestal 9, and a subcarrier 11 is fixed on the Beltier element 10. This subcarrier 11 has a heat sink 14 having a mounting portion 12 and a supporting portion 13 on its main surface as a base member, and a laser diode chip 15 . A cylindrical positioning fixture 17 that guides an optical fiber 16 that takes in the laser light emitted from the laser diode chip 15 from its tip (inner end), a light receiving element 18 that monitors the laser light, and a temperature monitor of the heat sink 13. Thermistors 19 are respectively fixed. The jacket of the optical fiber cable 5 in the package 1 is removed to become an optical fiber 16 consisting of a core and a cladding covering the core, and the optical fiber 16 is guided by the positioning fixture 17 and its tip is connected to the laser beam. It is made to face one output surface of the diode chip 15. Furthermore, the electrodes of each element and predetermined leads 6 are electrically connected by conductive wires 20. Note that this optoelectronic device does not contain resin or soldering flux in its package, and care has been taken to prevent characteristic deterioration due to these resins.

Such a photoelectronic device performs optical communication by emitting laser light from the laser diode chip 15 and transmitting the emitted laser light to a desired location via the optical fiber cable 5.

At this time, this optoelectronic device monitors the laser light with the light receiving element 18, controls the output of the laser diode chip 15 based on this information, and performs stable optical communication. Also,
This optoelectronic device monitors the temperature of the heat sink 14 with the thermistor 19, and controls the Bertier element 10 based on this information so that the laser diode chip 15 is always driven within a constant temperature range, thereby stabilizing optical communication. It is now being planned.

This optoelectronic device is composed of iron-2.7 ke cobalt (Fe-N
A flat package M8. made of Kovar made of i-Co) alloy. Fiber optic cable 5. It is composed of individual parts such as the Vertier element 10 and several subassembly parts.

Next, each part of such a photoelectronic device will be explained.

As shown in FIG. 2, the package main body sub-assembly part, which has the pan cage main body 7 as its main component, includes the package main body 7. Flange 3. Fiber support 4. It consists of 6 leads and 9 pedestals.

The package body 7 has a structure in which a flange 3 having a mounting hole 2 is attached to one end thereof. In addition, at the bottom of the pan cage body 7, there are two rows of seven glue rods 6 each.
is installed. Each lead 6 passes through the bottom plate of the pan cage body 7 and is insulatively fixed to the package body 7 by an insulating support 21 made of Kovar glass, which has substantially the same coefficient of thermal expansion as Kovar forming the bottom plate.

These leads 6 are one of the characteristic structures of the present invention, and as shown in FIG. The part 22 and the part protruding from the package 1 are lead parts 23 which are thin with a diameter of 0.45 mm. Further, in manufacturing the lead 6, one end of the thick lead portion 22 is fixed by welding to a head portion 24 having a diameter of 0.75 mm at one end of the thin lead portion 23. Manufactured.

Among these leads 6, the wire 20 connected to the Bertier element 10 is connected to the lead 6 by welding or the like, but the other wires 20 are connected to the lead 6 by ultrasonic wire bonding. . Ultrasonic wire bonding uses ultrasonic vibration to perform wire bonding, but since the lead 6 in this embodiment is thick, even if the wire 20 is connected to the upper end of part 6, the lead 6 will not vibrate. Wire bonding can be performed reliably.

In addition, even if the lead 6 is only partially formed, it is formed thick, which lowers the parasitic inductance of the lead 6, making optical communication stable in the high frequency range of 565 Mbit or more. There are features that allow you to do so.

On the other hand, the connection form of the leads 6 is as shown in FIG. The second and third wood grain glue parts 6 from the left become the external terminals of the laser diode chip 15, and the fourth and fifth wood grain glue parts 6 from the left of the lead row on the front side.
becomes an external terminal of the thermistor 19. Further, the right end glues 6 of the front and rear lead rows serve as external terminals of the Bertier element 10, respectively. The other leads 6 are empty leads that are not used in this embodiment.

On the other hand, in this package main body subassembly component, a fiber support 4 is attached to the end face of the package main body 7 opposite to the flange 3.

The fiber support 4 includes an outer support 25 each formed of a cylindrical body, and an inner support 26 fitted into the inner end of the outer support 25. The outer support 25 has its inner end penetrated and hermetically soldered to the end of the pan cage body 7. Further, the outer end portion of the outer support body 25 has a thin-walled tube structure and is easily crushed by caulking. Further, the inner support 26 has a structure in which the outer end is fitted into the inner end of the outer support 25, and the inner end extends thinly and has an inclined surface at the tip.

In such a fiber support 4, before the optical fiber cable 5 is inserted into the fiber support 4,
The jacket is removed over a certain length on the tip side, and the portion of the optical fiber 16 from which the jacket has been removed extends over the entire area of the inner support 26 and the outer support 2.
5, and the jacketed portion extends to the outer end portion of the outer support 25. The optical fiber 16 is fixed at a portion of the jacket by caulking the outer end of the fiber guide 4, and hermetically fixed by soldering the inner end.

Further, a pedestal 9 is fixed on the bottom of the package main body subassembly component. This pedestal 9 is fixed to the bottom surface of the package body 7 on the side of the flange 3 by brazing which does not require any flux. In this pedestal 9, the electrode plates 27 above and below the Bertier element 10 have a coefficient of thermal expansion of 6.7X.
Since the electrode plate 27 is made of alumina ceramic with a coefficient of thermal expansion of about 10-'/'C, it is made of copper tungsten (CuW) with a coefficient of thermal expansion of 6°0 to 7.0xlO-'/'C. There is. Also, this CuW
has a thermal conductivity of 0. 5-0. 67 c a l 7c
m-sec・0C, which increases the heat dissipation performance of the Beltier element 10. Further, one end of the pedestal 9 contacts the peripheral wall of the package body 7 of the three examples of flanges,
Heat is transmitted from the pedestal 9 to the flange 3 via the peripheral wall.

The subcarrier 11 as a subassembly part is a third
The structure is as shown in the figure.

As shown in FIG. 4, this subcarrier 11 has a heat sink 14 made of a rectangular plate as its main component. This heat sink 14 has a mounting portion 12 and a support portion 13 on its main surface. These mounting portion 12 and support portion 13 have a protruding shape. The mounting section 12 is arranged to cross the central region of the main surface of the heat sink 14, and the support section 13 extends parallel to the mounting section 12 at one end side. In addition, these mounting portions 12 and supporting portions 1
As shown in FIG. 4, 3 extends in a direction perpendicular to an axis of inclination that is inclined at θ with respect to the center line of the heat sink 14. As shown in FIG. Further, a cylindrical positioning fixing body 17 is fixed through the support portion 13 . This positioning fixing body 17 serves as a support shaft that guides the optical fiber 16, and also serves as an adjustable shaft that can adjust the position of the tip of the optical fiber 16. For this reason, the positioning fixing body 17 is made of a material that is easily plastically deformed, for example, cupro nickel, and as shown in FIG.
a thin deformable adjustment shaft 28 that is inserted into the support part 13;
It consists of a large-diameter support shaft 29 whose stepped surface abuts against the outer wall of the support shaft 29. The optical fiber 16 is attached to this positioning fixed body 1
7, and its tip is guided by the laser diode chip 15.
The light emitting surface is faced to one side. Also, optical fiber 1
6 is fixed to the slotted inner end of the adjustment shaft 28 with solder 30.

On the other hand, on the distal end of the positioning fixing body 17, that is, on the mounting portion 12 on the extension line of the distal end of the adjustment shaft 28, a submount 32 is soldered with fluxless low melting point solder, for example, Pb.
It is fixed with solder made of -3n-In. The submount 32 is made of insulating SiC (α: 3.7×
10-''/@C). Furthermore, as shown in FIGS. 1 and 6, a conductive metallized layer 33 is provided on the main surface of the submount 32.

Then, on this metallized layer 33, Au-
A laser diode chip 15 and a pedestal 3 made of Au are connected to each other independently via 3n eutectic layers 34 and 35.
6 is fixed.

Therefore, the lower electrode of the laser diode chip 15 is electrically connected to the pedestal 36 via the metallized layer 33. The laser diode chip 1
5 is fixed to the submount 32 in a so-called p-up state in which the resonator 38 that emits the laser beam 37 is far away from the submount 32, as shown in FIG. Further, the electrode on the upper surface of the laser diode chip 15 is electrically connected to the mounting part 12 by two wires 20, and the pedestal 36 and the part 6 are connected to each other by two wires 20, as shown in FIG. Electrical connection is made with a real wire 20. This is the laser diode chip 1
In this optoelectronic device, the connection between the upper electrode of No. 5 and the mounting portion 12 and the connection between the pedestal 36 and the lead 6 using the wire 20 is used as a negative side because the side that drives the laser diode chip 15 is a high-speed transistor. This is for polarity change. Note that the laser diode chip 15 is fixed on the mounting portion 12 while being mounted on the submount 32.

Further, in the optoelectronic device of this embodiment, the laser diode chip 15 is offset from the center line of the heat sink 14 and biased to one side. This is to shorten the length of the wire 20 stretched between the pedestal 36 and the lead 6. By shortening the length of the wire 20, parasitic inductance is reduced, and the optoelectronic device can be used even in a high frequency range. This is for stable driving.

Furthermore, since the laser diode chip 15 is off the center line of the heat sink 14 and the positioning fixture 17 that guides the optical fiber 16 is off the center line,
Fiber support 4 of pancage body subassembly parts
The positioning fixing body 17 is no longer located on the extension line.

As a result, if the optical fiber 16 extending from the fiber support 4 to the positioning fixture 17 is arranged so that no undue force is applied, the optical fiber 16 will draw a curved line as shown in FIG. It will be extended.

In this way, the fact that the optical fiber 16 extends in a curved line between the two fixed points means that even if the distance between the two fixed points changes due to temperature fluctuations, no unreasonable force is applied to the optical fiber 16. This eliminates the problem of communication. In other words, if the optical fiber 16 is stretched linearly between two fixed points, if the relative positional relationship between the two points of the optical fiber 16 changes due to thermal expansion or contraction, the light A force is applied to the fiber 16 or the optical fiber 1
However, since the optical fiber 16 extends in a curved line as shown in FIG. When the optical fiber 16 is extended to point B in the state or shrunk from point A to point 0 in the low temperature state, the optical fiber 16 bends as shown by the one-dot chain line or the two-dot chain line to accommodate the change. No stress is applied, and damage to the optical fiber 16 can be prevented.

Further, a chip carrier 39 to which a light receiving element 18 is attached is fixed to the main surface of the heat sink 14 via an Au-3i layer. The chip carrier 39 is made of a ceramic block, and is provided with an element fixing metallized layer 40 and a wire fixing metallized layer 41 over its lower side (principal surface) and upper surface, respectively. The light receiving element 18 is formed by the metallized layer 40 for fixing the element.
It is fixed thereon via an Au-5i eutectic layer. Also,
The electrode on the upper surface of the light receiving element 18 and the wire fixing metallized layer 41 are electrically connected by a wire 42. Note that the chip carrier 39 is the chip carrier 3.
The light receiving element 18 is fixed to the heat sink 14 so that one side of the rectangle 9 coincides with one side of the heat sink 14.
The light receiving surface is not perpendicular to the laser beam 37 but is inclined.

Therefore, since the light reflected from the light receiving surface of the light receiving element 18 does not return to the output surface of the laser diode chip 15, generation of noise due to the returned light can be prevented.

Further, on the upper surface of the support portion 13 of the heat sink 14,
A thermistor 19 that monitors the temperature of the heat sink 14
is fixed via a thermistor support chip 43.

The thermistor support chip 43 is made of a ceramic block and has metallized layers (not shown) on its front and back surfaces.

The thermistor 19 is fixed to the upper surface of the thermistor support chip 43 by the Au-3n eutectic layer. As a result, the exposed metallized layer portion of the thermistor support chip 43 becomes electrically connected to the lower electrode of the thermistor 19. Therefore, in order to establish conduction between the electrode of the thermistor 19 and the lead 6, as shown in FIG. The leads 6 and the metallized layer of the thermistor support chip 43 are connected by two wires 20.

Further, the heat sink 14 is provided with a depression 44 or a hole 45, as shown in FIG. When aligning the optical axes of the laser diode chip 15 and the optical fiber 16, the tip of a position adjustment lever 46 or the like is inserted into the recess 44 and the hole 45, as shown by the two-dot chain line in the figure. 44 and a part of the peripheral wall of the hole 45 is moved as a fulcrum for the position adjustment lever 46, and the adjustment shaft 28 of the positioning fixing body 17 is plastically deformed vertically and horizontally at the other end of the position adjustment lever 46, thereby adjusting the optical axis. Matching is now underway.

According to such an embodiment, the following effects can be obtained.

(1) According to the present invention, in an optoelectronic device, the leads extending both inside and outside the pancage have a standard diameter on the outside of the pancage, but are thicker on the inside of the pancage. Therefore, the parasitic inductance of the leads is reduced, and the characteristics of the optoelectronic device in the high frequency range are stabilized.

(2) According to the present invention, in the optoelectronic device, the laser diode chip includes a laser diode chip 1. Since the wire is biased toward the lead side that is electrically connected to the electrode of the laser diode chip, the length of the wire that electrically connects the electrode and lead of the laser diode chip is shortened, and the parasitic inductance of the wire is reduced. Therefore, the effect of stabilizing the characteristics of the optoelectronic device in the high frequency range can be obtained.

(3) Due to the above (1) and (2), the optoelectronic device of the present invention has the effect that the characteristics in the high frequency range are stabilized.

(4) According to (1) above, in the optoelectronic device of the present invention, since the reet to which the wire is connected has a large diameter, when the wire is connected to the upper end of the lead by ultrasonic wire bonding, the lead is Because it is thick, it does not vibrate, so wire bonding can be performed reliably.

(5) Since the stepped shaft-shaped lead used for assembling the optoelectronic device of the present invention is manufactured by welding the thin lead and the thick lead, the manufacturing cost can be reduced.

(6) According to the invention, a laser diode chip.

The light-receiving element, thermistor, and a positioning fixture that guides the optical fiber are integrated into the heat sink to form a subcarrier. In addition, the package body, flange,
The lead, pedestal, and fiber guide are integrated into a subassembly part of the package body. therefore,
In assembling an optoelectronic device, this subcarrier is fixed on a Peltier element fixed to a package main body subassembly component, and the optical fiber and laser diode chip fixed to a positioning fixture of the subcarrier are connected. By aligning the axes, assembly of important parts is completed, resulting in the effect that highly accurate assembly becomes possible.

(7) According to the above (6), according to the present invention, since the assembly is performed using two sub-assembly parts and several individual parts, it is possible to obtain the effect of increasing productivity.

(8) During assembly of the optoelectronic device of the present invention, the optical axes of the laser diode chip and the optical fiber are aligned by oscillating position adjustment of the positioning fixing body of the subcarrier, resulting in highly accurate optical axis alignment. Since this can be done, the effect of high quality can be obtained.

(9) The optoelectronic device of the present invention changes the position of the positioning fixture when aligning the optical axes of the laser diode chip and the optical fiber, but this positional variation is performed by plastic deformation of the positioning fixture. After this, the optical coupling state does not return to its original state, so the optical coupling state at the time of setting can be maintained at all times, resulting in the effect of stabilizing the reliability.

(10) In the optoelectronic device of the present invention, in the package, the optical fiber draws a curve between two fixed points and extends in an X shape, so even if there is a temperature change, the optical fiber changes its curvature. Since the optical fiber is simply extended, no damage occurs to the optical fiber and its characteristics are stabilized.

(11) According to the above (1) to (10), according to the present invention, a synergistic effect is obtained in that wire bonding can be performed reliably and an optoelectronic device with stable characteristics in a high frequency range can be provided at a low cost. .

Although the invention made by the present inventor has been specifically explained above based on Examples, it goes without saying that the present invention is not limited to the above Examples and can be modified in various ways without departing from the gist thereof. For example, the lead may be manufactured by machining.

In the above description, the invention made by the present inventor is mainly applied to the manufacturing technology of optoelectronic devices for optical communication, which is the background field of application, but the invention is not limited thereto.

The present invention is applicable to at least electronic components in which wire bonding is performed using ultrasonic waves and electronic components used in a high frequency range.

〔Effect of the invention〕

A brief explanation of the effects obtained by typical inventions disclosed in this application is as follows.

In the optoelectronic device for optical communication of the present invention, the leads extending inside and outside the package have a diameter of 0.45 mm at the lead portion outside the pancage in accordance with the standard.
The leads extending inside the pancage are φ0.75 mm, which is thicker than the outer part. Also, the laser diode chip disposed inside the pancage is deviated from the center line of the package and does not meet the electrodes of the laser diode chip. They are arranged unevenly close to the electrically connected leads.Therefore, the leads are thicker inside the package, reducing parasitic inductance.
The characteristics of optoelectronic devices in the high frequency range are stabilized. Further, since the length of the wire connecting the lead and the laser diode chip is shortened because the laser diode chip is arranged close to the lead side, the parasitic inductance is reduced. Characteristics become stable.

[Brief explanation of the drawing]

FIG. 1 is a schematic diagram showing a lead fixing state in an optoelectronic device according to an embodiment of the present invention, FIG. 2 is a perspective view showing the main parts of the optoelectronic device, and FIG. Figure 4 is a plan view of the heat sink on the subcarrier, Figure 5 is a sectional view showing the solder ring at the inner end of the positioning fixture, and Figure 6 is a perspective view showing the mounting state of the laser diode chip on the subcarrier. FIG. 7 is also a schematic diagram showing the fixed state of the optical fiber. DESCRIPTION OF SYMBOLS 1... Package, 2... Mounting hole, 3... Flange, 4... Fiber support, 5... Optical fiber cable, 6... Lead, 7... Package body, 8...
...Package lid, 9...Pedestal, 10...Peltier element, 11...Subcarrier, 12...Mounting section, 1
3... Support part, 14... Heat sink, 15...
Laser diode chip, 16... optical fiber, 17
... Positioning fixed body, 18... Light receiving element, 19...
- Thermistor, 20... Wire, 21... Insulating support, 22... Thick lead part, 23... Thin lead part, 24... Head, 25... Outer support,
26... Inner support body, 27... Electrode plate, 28...
... Adjustment shaft, 29 ... Support shaft, 30 ... Solder, 3
2... Submount, 33... Metallized layer, 34
゜35...Au-3n eutectic layer, 36...pedestal, 37...laser light, 38...resonator, 39...
Chip carrier, 40...metalized layer for element fixing,
41... Metalized layer for wire fixing, 42... Wire, 43... Thermistor support chip, 44... Hole, 45... Hole, 46... Lever for position adjustment.

Claims (1)

[Claims] 1. An electronic component having a package and a lead extending inside and outside the package, wherein at least a portion of the lead extending into the package is thicker than the other portion. An electronic component characterized by: 2. An electronic component comprising a package, leads extending inside and outside the package, and a chip built into the package, wherein at least the part of the lead extending into the package is more attractive than other parts. The chip is moved away from the center of the package so that the lead side that is electrically connected to the chip electrode is thicker and the length of the wire that electrically connects the chip electrode and the lead is shortened. An electronic component characterized by being arranged unevenly.