JPS62257757A - Resin sealed type semiconductor device and manufacture thereof - Google Patents
Resin sealed type semiconductor device and manufacture thereofInfo
- Publication number
- JPS62257757A JPS62257757A JP61099381A JP9938186A JPS62257757A JP S62257757 A JPS62257757 A JP S62257757A JP 61099381 A JP61099381 A JP 61099381A JP 9938186 A JP9938186 A JP 9938186A JP S62257757 A JPS62257757 A JP S62257757A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- semiconductor element
- whole
- semiconductor device
- transparent resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229920005989 resin Polymers 0.000 title claims abstract description 51
- 239000011347 resin Substances 0.000 title claims abstract description 51
- 239000004065 semiconductor Substances 0.000 title claims abstract description 38
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- 239000002904 solvent Substances 0.000 claims abstract description 12
- 239000011248 coating agent Substances 0.000 claims abstract description 5
- 238000000576 coating method Methods 0.000 claims abstract description 5
- 238000007789 sealing Methods 0.000 claims description 12
- 238000001704 evaporation Methods 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 4
- 239000003822 epoxy resin Substances 0.000 abstract description 7
- 229920000647 polyepoxide Polymers 0.000 abstract description 7
- -1 polysiloxane skeleton Polymers 0.000 abstract description 4
- 238000010438 heat treatment Methods 0.000 abstract description 3
- 239000011256 inorganic filler Substances 0.000 abstract description 3
- 229910003475 inorganic filler Inorganic materials 0.000 abstract description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 abstract description 3
- 239000010409 thin film Substances 0.000 abstract description 3
- 230000001351 cycling effect Effects 0.000 abstract description 2
- AJDIZQLSFPQPEY-UHFFFAOYSA-N 1,1,2-Trichlorotrifluoroethane Chemical compound FC(F)(Cl)C(F)(Cl)Cl AJDIZQLSFPQPEY-UHFFFAOYSA-N 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 9
- 229920002379 silicone rubber Polymers 0.000 description 4
- 239000004945 silicone rubber Substances 0.000 description 4
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 3
- 229920002050 silicone resin Polymers 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 241001474791 Proboscis Species 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000001723 curing Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000000499 gel Substances 0.000 description 1
- 150000008282 halocarbons Chemical class 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 229910052809 inorganic oxide Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000012454 non-polar solvent Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 229940035339 tri-chlor Drugs 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体装置及び製造方法に係り、特にＥ Ｐ
ＲＯＭ （Ｅｒａｓａｂｌｅ ａｎｄ Ｐｒｏｇｒａｍ
ｍａｂｌｅ ＲｅａｄＯｎｌｙ Ｍｅｍｏｒｙ）等のパ
ンケージに窓を有する半導体装置に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a semiconductor device and a manufacturing method, and in particular to an E P
ROM (Erasable and Program
The present invention relates to a semiconductor device having a window in a pancage such as a mable ReadOnly Memory.
ＥＰＲＯＭ装置は、外部から紫外線照射を受けることが
できるようにサファイア、アルミナまたは石英ガラス等
の透光材料が取りつけられたセラミックパッケージによ
り半導体が封止されている。In an EPROM device, a semiconductor is sealed in a ceramic package to which a transparent material such as sapphire, alumina, or quartz glass is attached so that ultraviolet rays can be irradiated from the outside.
ところが、この構造では封止材料が高価であり透光部材
の貼付けや埋込みのために特別の工程が必要であり、他
の半導体装置で行なわれている樹脂モールドに比べて高
価になる。これを解決するための特開昭５７−４２１５
２号、特開昭５９−１６３７０３７号でみられるように
プラスチック材料を用いて封止する構造が知られている
。However, in this structure, the sealing material is expensive and a special process is required for pasting and embedding the light-transmitting member, making it more expensive than resin molding used in other semiconductor devices. Japanese Patent Application Laid-Open No. 57-4215 to solve this problem
No. 2 and JP-A-59-1637037, a sealing structure using a plastic material is known.
第２図は、特開昭５９−１６３７０３７号に示された半
導体素子の構造である。半導体素子は、マウント部材２
を介してリードフレームのアイランド３に装着されてい
る。また半導体素子１は、ポンディングｖＡ４を介して
リードフレー１３のリード部５に接続されている。半導
体素子１上には透明樹脂６にて透光部材７が接着されて
いる。透光部材７のその表面に対向する他の一面と、リ
ードフレームの外部リード部８とが露出するように、封
止樹脂９により全体が封止されている。透明樹脂６は、
半導体素子１の透光部材７に対向する面１０の全表面お
よびボンディング線４の先端のボール部１１を含む一部
を被覆している。FIG. 2 shows the structure of a semiconductor device disclosed in Japanese Patent Application Laid-Open No. 59-1637037. The semiconductor element is mounted on the mounting member 2
It is attached to the island 3 of the lead frame via. Further, the semiconductor element 1 is connected to the lead part 5 of the lead fly 13 via a bonding vA4. A light-transmitting member 7 is bonded onto the semiconductor element 1 with a transparent resin 6. The entire structure is sealed with a sealing resin 9 so that the other surface of the light-transmitting member 7 opposite to that surface and the external lead portion 8 of the lead frame are exposed. The transparent resin 6 is
The entire surface of the surface 10 of the semiconductor element 1 facing the light-transmitting member 7 and a portion including the ball portion 11 at the tip of the bonding wire 4 are covered.
特開昭５７−４２１５２号の装置では基本的構造はほぼ
同じであるが、透明樹脂は透光部材の下部にのみ存在し
、ボンディング線およびそれに接しているアルミ配線部
１２を含む半導体表面は封止樹脂により被覆されている
。The device disclosed in JP-A No. 57-42152 has almost the same basic structure, but the transparent resin is present only in the lower part of the light-transmitting member, and the semiconductor surface including the bonding line and the aluminum wiring section 12 in contact with it is sealed. Covered with a stopper resin.
上記従来技術は総合的な信頼性についての配慮がされて
おらず、特開昭５９−１６３７０３７号の装置ではアル
ミ配線部１２は透明樹脂６により被覆されており耐湿性
は借れているが、その透明樹脂６でボンディング線４の
一部が被覆されているため、厳しい温度サイクル試験で
はボンディング線４が透明樹脂６と封止樹脂９との界面
付近で断線するという問題があった。これはボンディン
グ線は透明樹脂６と封止樹脂９にそれぞれ接着し、固定
されており、両樹脂６，９の熱膨張計数が異るため、温
度サイクルにより繰り返し応力を受けて切断すると考え
られる。The above-mentioned conventional technology does not give consideration to overall reliability, and in the device of JP-A-59-1637037, the aluminum wiring section 12 is covered with a transparent resin 6, which has poor moisture resistance. Since a portion of the bonding wire 4 is covered with the transparent resin 6, there was a problem in that the bonding wire 4 was broken near the interface between the transparent resin 6 and the sealing resin 9 during a severe temperature cycle test. This is because the bonding wire is bonded and fixed to the transparent resin 6 and the sealing resin 9, respectively, and the thermal expansion coefficients of both resins 6 and 9 are different, so it is thought that the bonding wire is repeatedly subjected to stress due to temperature cycles and breaks.
一方、特開昭５７−４２１５２号の装置ではボンディン
グ線は封止樹脂で被覆されているため耐温度サイクル性
に優れるが、高温雰囲気でアルミ配線部の腐食が生じや
すい。これは透光部材と封止樹脂との接着が不十分で、
その界面から水が侵入し、かつアルミ配線部が封止樹脂
で被覆されているためと考える。On the other hand, in the device disclosed in JP-A-57-42152, the bonding wire is coated with a sealing resin, so it has excellent temperature cycle resistance, but the aluminum wiring portion is susceptible to corrosion in a high-temperature atmosphere. This is due to insufficient adhesion between the transparent member and the sealing resin.
We believe that this is because water entered through the interface and the aluminum wiring was covered with sealing resin.
本発明の目的は耐温度サイクル性、耐湿性共に優れた半
導体装置を堤供することにある。An object of the present invention is to provide a semiconductor device having excellent temperature cycle resistance and moisture resistance.
上記目的は透明部材の一面が半導体素子正面に透明樹脂
にて接着され、これに対向する他の一面が外部に露出す
る透光部材を有する半導体装置において、前記透明樹脂
が前記半導体素子の一面の全表面を被覆していると共に
ボンディング線の前記半導体素子に接続された部分の近
傍をその表面に沿って被覆することにより達成される。The above object is to provide a semiconductor device having a light-transmitting member in which one side of the transparent member is bonded to the front surface of the semiconductor element with a transparent resin, and the other side opposite to this is exposed to the outside. This is achieved by covering the entire surface and also covering the vicinity of the portion of the bonding line connected to the semiconductor element along the surface.
また、前記半導体装置は半導体素子の表面に、溶剤に溶
かした透明樹脂を塗布する工程と、前記溶剤を蒸発させ
る工程と、透光部材を透明樹脂を介して半導体素子上に
設置する工程と、樹脂モールドする工程によって製作さ
れる。The semiconductor device also includes the steps of applying a transparent resin dissolved in a solvent to the surface of the semiconductor element, evaporating the solvent, and installing a light-transmitting member on the semiconductor element via the transparent resin. Manufactured using a resin molding process.
本発明において、透明樹脂はボンディング線に沿って薄
く形成され、かつ透明樹脂と封止樹脂との界面は接着さ
れていないため、温度サイクルの際ボンディング線にか
かる応力は分散されて各部の応力は小さくなる。また、
アルミニウム配線部は、アルミニウムとの接着性に優れ
た透明樹脂で被覆されているため水分によるアルミニウ
ム腐食は起こりにくい。In the present invention, the transparent resin is formed thinly along the bonding line, and the interface between the transparent resin and the sealing resin is not bonded, so the stress applied to the bonding line during temperature cycling is dispersed and the stress in each part is reduced. becomes smaller. Also,
The aluminum wiring part is coated with a transparent resin that has excellent adhesion to aluminum, so aluminum corrosion due to moisture is unlikely to occur.
上記透明樹脂の被覆形状は、透明樹脂をそのまま用いる
工程では粘度とぬれ性を満足する材料がな（形成が困難
であり、透明樹脂を適当な溶剤に溶かした溶液を用いる
ことにより形成される。The shape of the transparent resin coating described above is difficult to form using a material that satisfies viscosity and wettability in the process of using the transparent resin as it is, so it is formed by using a solution prepared by dissolving the transparent resin in an appropriate solvent.
また、透明樹脂の加熱硬化時のボイド発生を防止するた
め、溶剤のみを蒸発させる工程が必要となる。Furthermore, in order to prevent the generation of voids during heat curing of the transparent resin, a step of evaporating only the solvent is required.
透明樹脂としては、エポキシ樹脂、シリコーン系樹脂が
用いられ、特にエポキシ樹脂が好ましい。As the transparent resin, epoxy resins and silicone resins are used, and epoxy resins are particularly preferred.
シリコーン系樹脂としては、特に側鎖にメチル基を主体
としたポリシキサン骨格を持つ付加型シリコーンゴム、
シリコーンゲルが好ましい。Examples of silicone resins include addition-type silicone rubber, which has a polysiloxane skeleton mainly composed of methyl groups in its side chains;
Silicone gels are preferred.
溶剤としては、上記透明樹脂を十分溶かす化合物、特に
非極性化合物であるトルエン、キシレン、１，１．２−
）リクロロー１．２．２−）リフルオロエタンなどのハ
ロゲン化炭化水素類などが用いられる。これらの非極性
溶剤を用いて透明樹脂を溶かし粘度を低下させることに
より、ボンディング線の非極性である全表面との濡れ性
が向上し、その表面に沿って？８液が塗布され 溶剤を
除去し、加熱硬化した後、透明樹脂の薄い被膜が形成さ
れる。透明樹脂と溶剤の混合割合は、透明樹脂１〜・１
０重量部と、溶剤６０〜９９重量部が用いられる。溶剤
の蒸発は室温放置または低温加熱で行う。Examples of solvents include compounds that can sufficiently dissolve the transparent resin, especially nonpolar compounds such as toluene, xylene, and 1,1.2-
) Rechloro 1.2.2-) Halogenated hydrocarbons such as refluoroethane are used. By melting the transparent resin using these non-polar solvents and lowering its viscosity, we can improve its wettability with the entire non-polar surface of the bonding wire, and also improve its wettability with the entire non-polar surface of the bonding wire. 8 liquid is applied, the solvent is removed, and after curing by heating, a thin film of transparent resin is formed. The mixing ratio of transparent resin and solvent is 1 to 1 for transparent resin.
0 parts by weight and 60 to 99 parts by weight of solvent are used. Evaporation of the solvent is performed by leaving it at room temperature or heating it at a low temperature.
封止樹脂として無機充てん剤を含むエポキシ系樹脂、ポ
リフェニレンサルファイド系樹脂が用いられ、特にエポ
キシ系樹脂が好ましい。As the sealing resin, an epoxy resin containing an inorganic filler or a polyphenylene sulfide resin is used, and an epoxy resin is particularly preferred.
透光部材としては、紫外線を透過させるアルミナ、サフ
ァイア、石英ガラス、ホウ硅酸ガラスなどの無機酸化物
、シリコーン系樹脂、エポキシ系樹脂、ポリプロピレン
系樹脂などが用いられ、特にホウ硅酸ガラスが好ましい
。As the light-transmitting member, inorganic oxides such as alumina, sapphire, quartz glass, and borosilicate glass, which transmit ultraviolet rays, silicone resins, epoxy resins, and polypropylene resins are used, and borosilicate glass is particularly preferred. .
Ｃ実施例〕
以下、図面を参照して本発明の詳細な説明する。第１図
（ｄ）は本発明による半導体装置の実施例であり、第１
図（ａ）〜（ｄ）の装造工程に従って以下に説明する。C Embodiment] The present invention will be described in detail below with reference to the drawings. FIG. 1(d) shows an embodiment of the semiconductor device according to the present invention.
The following will explain the mounting steps shown in Figures (a) to (d).
第１図（ａ）に示すようにマウント部材２を介してリー
ドフレームのアイランド部３に装着された半導体素子１
上に側鎖にメチル基を有するポリシロキサン骨格の付加
型シリコーンゴム５重量部を１．１．２−トリクロル１
，２．２−１−リフルオロエタン（ｂ、ｐ ４７．６°
Ｃ）９５重量部に溶かした溶液１３を滴下し、半４体素
子１の一面１０の全表面、アルミ配線部１２上に設けら
れたボンディング線のボール部１１（半導体素子に接続
された部分の近傍）及びボンディング線４の一部を塗布
する〔第１図（ａ）〕。室温放置により１，１．２−）
リクロル−１，２，２−）リフルオロエタンを蒸発させ
る、これによりボンディング線４の全表面に透明樹脂６
としてシリコーンゴムの薄い被膜が形成する〔第１図（
ｂ）〕。透明樹脂６上に透光部材７を設置し、１５０°
Ｃで１時間加熱しシリコーンゴムを硬化させる〔第１図
（Ｃ）〕。上記構造吻を金型に設置し、封止樹脂９とし
て無機充てん剤を含有したエポキシ樹脂を注入し、加熱
硬化し、金型から取出し、リードフレームを切断し曲げ
てリード部５と外部リード８を形成し、半導体装置を形
成する〔第１図（ｄ）〕。As shown in FIG. 1(a), a semiconductor element 1 is mounted on an island portion 3 of a lead frame via a mount member 2.
5 parts by weight of addition type silicone rubber having a polysiloxane skeleton having a methyl group in the side chain were added to 1.1.2-trichlor 1
, 2.2-1-lifluoroethane (b, p 47.6°
C) A solution 13 dissolved in 95 parts by weight is dropped onto the ball part 11 of the bonding wire (the part connected to the semiconductor element) on the entire surface 10 of the semi-quad element 1 and on the aluminum wiring part 12. (nearby) and a part of the bonding line 4 [FIG. 1(a)]. 1,1.2-) by leaving at room temperature
Lichlor-1,2,2-)lifluoroethane is evaporated, thereby coating the entire surface of the bonding wire 4 with the transparent resin 6.
A thin film of silicone rubber is formed as shown in Fig. 1 (
b)]. A transparent member 7 is installed on the transparent resin 6, and the angle is 150°.
C. for 1 hour to cure the silicone rubber [Figure 1 (C)]. The above structural proboscis is placed in a mold, and an epoxy resin containing an inorganic filler is injected as the sealing resin 9, heated and hardened, taken out from the mold, and the lead frame is cut and bent to form the lead portion 5 and the external lead 8. to form a semiconductor device [FIG. 1(d)].
本発明によれば、簡略な工程により、耐温度サイクル性
１耐湿性に優れた樹脂封止型半導体装置が得られる。According to the present invention, a resin-sealed semiconductor device having excellent temperature cycle resistance and moisture resistance can be obtained through simple steps.
第１図（ａ）〜（ｄ）は本発明の一実施例の製造工程、
第２図は従来例の断面図である。
１・・・半導体素子、２・・・マウント部材、３・・・
アイランド部、４・・・ボンディング線、５・・・リー
ド部、６・・・透明樹脂、７・・・透光部材、８・・・
外部リード部、９・・・封止樹脂、１０・・・半導体素
子の一面、１１・・・ボンディング線のポール部、１２
・・・アルミ配線部、１３・・・１−リフルオロエタン
９５重量部に溶かした溶液。
代理人 弁理士 秋 本 正 実
第１図FIGS. 1(a) to (d) show the manufacturing process of an embodiment of the present invention,
FIG. 2 is a sectional view of a conventional example. 1... Semiconductor element, 2... Mounting member, 3...
Island part, 4... Bonding wire, 5... Lead part, 6... Transparent resin, 7... Transparent member, 8...
External lead part, 9... Sealing resin, 10... One side of semiconductor element, 11... Pole part of bonding wire, 12
...Aluminum wiring part, 13...A solution dissolved in 95 parts by weight of 1-lifluoroethane. Agent Patent Attorney Tadashi Akimoto Figure 1
Claims (1)
着され、これに対向する他の一面が外部に露出する透光
部材を有する半導体装置において、前記透明樹脂が前記
半導体素子の一面の全表面を被覆していると共に、ボン
ディング線の前記半導体素子に接続された部分の近傍を
その表面に沿って被覆していることを特徴とする半導体
装置。 ２、半導体素子の表面に溶剤に溶かした透明樹脂を塗布
する工程と、前記溶剤を蒸発させる工程と、透光部材を
透明樹脂を介して半導体素子上に設置し、かつボンディ
ング線の前記半導体素子に接続された部分の近傍をその
表面に沿って被覆する工程と、前記工程までで得られた
構造体を樹脂封止することを特徴とする樹脂封止半導体
素子の製造方法。[Claims] 1. A semiconductor device having a light-transmitting member in which one surface of the light-transmitting member is bonded to the surface of a semiconductor element with a transparent resin, and the other surface opposite to this is exposed to the outside, wherein the transparent resin is A semiconductor device characterized in that the entire surface of one side of the semiconductor element is covered, and the vicinity of a portion of a bonding line connected to the semiconductor element is covered along the surface. 2. Applying a transparent resin dissolved in a solvent to the surface of the semiconductor element, evaporating the solvent, installing a light-transmitting member on the semiconductor element via the transparent resin, and bonding the semiconductor element with a bonding line. 1. A method for manufacturing a resin-sealed semiconductor device, comprising: coating the vicinity of a portion connected to the semiconductor device along its surface; and sealing the structure obtained through the steps with a resin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61099381A JPS62257757A (en) | 1986-05-01 | 1986-05-01 | Resin sealed type semiconductor device and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61099381A JPS62257757A (en) | 1986-05-01 | 1986-05-01 | Resin sealed type semiconductor device and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62257757A true JPS62257757A (en) | 1987-11-10 |
Family
ID=14245940
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61099381A Pending JPS62257757A (en) | 1986-05-01 | 1986-05-01 | Resin sealed type semiconductor device and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62257757A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8252408B2 (en) | 2008-06-12 | 2012-08-28 | Renesas Electronics Corporation | Electronic device and method of manufacturing the electronic device |
-
1986
- 1986-05-01 JP JP61099381A patent/JPS62257757A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8252408B2 (en) | 2008-06-12 | 2012-08-28 | Renesas Electronics Corporation | Electronic device and method of manufacturing the electronic device |
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