JPS6225682A - Security key - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

[Detailed Description of the Invention] [Field of Application of the Invention] The present invention relates to a security key, and particularly to a security key for restricting access to sensitive (confidential) information stored in a computer system memory, external storage device, etc. ,
This invention relates to a security key used in a safety system for electrical devices to be controlled.

[Prior Art] Various safety devices have been proposed to limit and control access to sensitive information stored in electronic devices.

An example of the prior art is an electronic device for pressing a key lock device, but such a system is such that the information required to unlock the lock is stored in a memory, e.g.
It is stored in the OM, etc., and by comparing this with the manually generated 117N singing code, the lock is released, and the 7
This means that a huge amount of information can be accessed.

Further, in a system including another key device, when the key device is recognized by the target system, an access command (;j'';J- is generated).

Furthermore, if a memory card ``94'' is inserted into the target system, the target system will operate and certain information will be accessible when the memory card is removed from the target system. A system that puts the target system into the Jl' operating state can be mentioned.

In such conventional systems, the security of information stored in the memory of the target system cannot be guaranteed within one minute. Therefore, in order to solve such problems,
We have already proposed a security key that has a built-in memory that stores program information and code information, and has already achieved great success.

This security key is a system whose built-in memory forms part of the target system's memory, and by storing programs etc. in the security key's memory, unless the security key is inserted. , the target system is one that does not work. As a result, the security of confidential information, etc. is guaranteed,
This prohibits unauthorized access to confidential information.

[Problems to be solved]However, if the key or card has a built-in memory,
In normal use, high-voltage static electricity enters the key or card from the body of the person holding the key or card, and there is a risk of destroying the memory, especially the ROM, etc. built into the key or card. In addition, there is a large risk that the built-in memory will be destroyed by static electricity that is charged or applied to the key or card, making it difficult to use it as easily as a normal key or card.

[Objective and Overview of the Invention] The present invention solves the problems of the prior art and also solves the fact that a portion of the target system's memory is removed outside of the permitted period of use. Accordingly, it is an object of the present invention to provide a security key that can guarantee the security of information stored in the memory or external storage device of the target 7 stem.

[Means for Solving the Problems] The security key of the present invention for solving the above problems is a key or card having a memory, which is inserted into a receptacle provided in the target system. The memory of the key or card becomes part of the memory of the target system by placing the memory chip or the substrate to which this chip is bonded on the electrostatic damage protection 11 layer -L, and bonding to the chip is performed. The wire transmits tX-rays to an external terminal via a corresponding terminal provided on the electrostatic breakdown prevention layer.

[Effect] By configuring in this way, a part of the target system's memory will be removed outside of the specified period of use, thereby increasing the security of the information stored in the target system's memory. can be guaranteed. Also, while the target system memory is disconnected, it is impossible to make unauthorized access to information in the target system, and it becomes impossible to access information in the target system, such as the memory, other external storage devices, or other The security of information stored in memory etc. can be guaranteed for F minutes, and the memory of the key or card can be
Since it is placed on the 7th layer of electrostatic damage protection II, it will not be damaged by static electricity during normal use.

Hereinafter, one embodiment of the present invention will be described in detail using the drawings.

[Embodiment] Figure 1 is a block diagram of the safety system showing the key and receptacle, Figure 2 is a perspective view of the key separated from the receptacle, and Figure 3 is a back view explaining the internal state of the key. , FIG. 4 is an enlarged sectional view of the head portion thereof.

In FIGS. 1 and 2, the key 10 and the receptacle 5
0 and target system 100 are shown generally.

A feature of this embodiment is that the key 10 is electronically programmable, electronically changeable, and electronically readable ((
IF student) [1-processor, and is equipped with a non-volatile, anytime-access digital memory 40 (E2 PROM).

When the key 10 is inserted into the memory 40 or the receptacle 50, it becomes at least -ffl (which constitutes the i'r+ shell part of the memory of the target system 100. When the key 10 is removed from the receptacle 50, the target system 100 , 15 portions or most of the memory is real
- If it comes off, it will definitely stop working.

Here, the receptacle 50 includes a socket 51 , a cylinder 52 , a limit switch 53 , and a group of core contact points 17 . 17. -・・18.18. −Φ
Spring-loaded conductive contact piece groups 54, 54. ..., 5S.

55,...O is standing there.

In FIG. 2, the key 10 includes a head portion 12 and a grooved shaft. 'H13 fr optical key - It consists of a ceramic substrate with a general shape. As shown in FIG. 2, the key 10 includes grooves 15, 16 formed on both end sides of the shaft portion 13. As shown in FIG. It goes without saying that the key may be provided with a groove only on one end side of the shaft portion 13.

Conductive contact point group 17, 17. ...and 18°18
, . The recess 20 is the memory 4 that can be accessed at any time.
A receptacle is formed in the do portion I2 in order to receive a 0 therein. Then, the wiring 14 contacts the recess 20 and the contact points 17, 17.
．． ...and 18, 18°・φ・.

Ceramic layer 19 is a contact point group! 7,17゜Φ...and 18.18.・Provided on a ceramic substrate except for -. The metal plating layer 30 is the ceramic layer 19
This gives the key 10 the appearance of a normal metal key. The metal layer 30 additionally keeps static electricity to a minimum.

Key 10? IL-1 - It can be used as a conventional FROM or ROM device as an easily removable, controllable and portable data storage medium, yet functions in the same way as a conventional key.

By the way, it is important to prevent the memory 40 built into the key from being damaged by static electricity. Next, Fig. 3 shows the structure of the key 10 for preventing electrostatic damage.
This will be explained according to FIG.

As seen in FIG. 3, the key 10 is
A memo IJ 40 is inserted into the recess 20, and the chip 41 of the memory 40 is placed on the Zener diode substrate layer 42L as shown in FIG.

The chip 41 and the Zener diode substrate layer 42 are welded to each other via the gold plating layer 42a, and on the side opposite to the welded surface of the Zener diode substrate layer 42,
Similarly, all the plating layers 42b are provided as a ground, and are connected to the ground wiring provided on the first ceramic layer 43.

The Zener diode substrate layer 42 has bonding terminals 21, 21 . - are provided to correspond to the bonding pads 41a, 41a, . .21. ... to wire 22.22. ... is dropped and wire bonded, and from this bonding terminal 21, external ends '7'-23, 23 are provided correspondingly.
, · O · to wires 24, 24 . The external lead end J'23 and the chip 41 are wire-bonded to each other by wire bonding.

By the way, the external terminals 23, 23 . -... are formed at the ends of the third ceramic layer 45, and the first ceramic layer 43 is provided with a relatively thick metal plating layer 43a on the back side thereof.

Signal wiring 43b is then connected to corresponding predetermined external terminals 23, 23 . . . of the third ceramic layer 45 via through holes. ...is connected to...

On the other hand, address signal wiring 45a is provided on the second surface of the third ceramic layer 45, and these are similarly connected to predetermined external ends J'23, 23°, etc. corresponding to the χ. There is.

and a second ceramic layer between the first and third ceramic layers.
In order to eliminate the influence of noise, the ceramic layer 44 (1-1) is grounded except for the through-hole portion.
4a is sunk by 1. Further, the fourth ceramic layer 46 also has similar grounding pads 46d cut out on its first and second surfaces, and a power line 46d is provided on the fifth ceramic layer 47.
7a is running.

A relatively thick metal plating layer 30 as a ground layer is provided on the sixth ceramic layer 48, etc., which is the first part, and this layer also provides electrostatic damage prevention 11. This is what we do.

By creating a structure in which the address wiring, address wiring, and power supply line are sandwiched between the ground wiring and the ground wiring as shown in 1. below, a structure that is resistant to electrostatic damage and noise can be achieved. In addition, the above-mentioned A1. Bow wire wiring 43b, address wire wiring 45a, and ・Ii 11+a line 4
7a etc., these appear as the wiring 14 in FIG. 1.

As a result, even if high-voltage static electricity enters the key from the body of the person holding the key, it is received by the Zener diode layer 21 and breaks down, and the high-voltage static electricity falls from the gold layer on the back side to the ground. As a result, high voltage is not applied to the ROM chip, and the ROM is damaged by static electricity.
)i There is no risk of damage.

Therefore, under normal usage conditions, even if high-voltage static electricity is applied to the key from the body of the person holding the key, or even if static electricity is charged or applied to the key, there is no risk of damage to the built-in memory. There are almost no keys, and it can be used easily like a regular key.

In addition, in FIG. 4, a portion of one part of the recess 20 indicated by a dotted line is a part of the recess 20 that is sealed 11.

This is Camp 25.

Next, to explain the overall operation, when the key 10 is inserted into the receptacle 50 and a predetermined rotation is made, the switch 53 disposed at the bottom of the receptacle 50 switches to "O".
N” and the pro sensor 101 of the target system 100
is activated or an interrupt is issued.

Therefore, the processor 101 connects the bus 104 and the receptacle 50! Western 54.54. ....

55.55. ...and the key contact points 17, 17
,... Shadow and contact point JjT18.18. Access the memory 40 of the key 10 through Φ and φ.
Send it to the 10th side. This access number is sent to the memory 40, and predetermined data is read from the accessed area of the memory 40.

The read data is the touch point group 17.1 on the key 10 side.
7. ..., 18, 18. ..., contact piece group 54, 54 . . . on the receptacle 50 side.・・Φ.

55.55. ...Processor 1 via bus 104
01, and predetermined processing is performed.

Now, here, the memory 40 of the key 10 is stored in the processor 1.
It is allocated to a part of the address space of 01,
RAM 10 in the system of the target system 100
2, it is accessed in the same way as the program ROM 103.

Then, upon obtaining program information or data information such as commands stored in the memory 40, the processor 101 performs a predetermined operation to retrieve specific information in the memory or external storage device of the target system 100. You will be accessed 7 times.

The memory 40 of the key 10 includes PROM and EPROM.

If E2 PROM or the like is used, it can be reprogrammed by a programmer. The key may contain, for example, 16384 bits of information via hybrid technology and may emulate other similar FROMs up to 16384 bits.

Data stored in memory 40 may be written, read or updated in whole or in part when key 10 is inserted into receptacle 50.

The information stored in the memory 40 in the key 10 is stored in the memory 40.

It may contain a large number of personal and unique codes (50-100 characters) that allow access to the system. key 1
0 may also include retrofitted portions of the terminal equipment without which the terminal may not operate properly.

Consider the case where the key 10 is lost or a duplicate is made.For example, if the key 10 is lost, the key 10 contains a valid code, but the person who finds the key 10 is unable to find it. There is no way to know whether it can be applied to other terminals.

The issuer can add a new key 10 to the package and change the terminal or CPU access code to an unused combination.

As explained above, in the embodiment, a Zener diode layer is provided as the electrostatic discharge protection layer, but this is because when a voltage higher than a predetermined voltage is applied, static electricity is removed from the ground. For example, as a layer for a piezo element, the thickness of the layer may be changed depending on the applied voltage, and this change may be used to contact the ground and eliminate the applied static electricity. However, this electrostatic breakdown layer is not limited to a Zener diode layer.

In addition, in the embodiment, the key and the receptacle are connected using the contact terminal r, but this may be done using optical coupling using a light emitting element and an optical coupling element r, and the contact terminal or the optical coupling element is connected to the memory. It goes without saying that it may be provided on the front or back side of the upper side, which is the same as the one that houses it, or on the front and back sides.

Furthermore, in the embodiment, the key has a built-in memory, but if this memory can be filled using RAM, a battery can be built into the key.

Further, in the embodiment, the key has a built-in E2 FROM memory, but it goes without saying that EPROM, PROM, etc. can also be used.

Further, in the embodiment, the key has a built-in memory, but it goes without saying that a card with a built-in memory may be used instead of a key with a built-in memory.

As can be understood from the explanation of "Effects of the Invention", the present invention provides a key or a card having a memory, which can be inserted into a receptacle provided in a target system. memory is target 7
One of the stem's memory? l<min, and the memory chip or the board to which this chip is bonded must be protected against electrostatic damage.
Since the bonding wires for the chip are placed on the 1- layer of the I layer and connected to external terminals via the corresponding terminals provided on the electrostatic destruction storage layer, a part of the memory of the target system is transferred to the IF layer. The information stored in the memory of the target system can be kept safe since it will be removed outside of the permitted period of use.

In addition, while a portion of the target system memory is removed, it is virtually impossible to make unauthorized access to information within the target system. The security of information stored in the key or card memory can be guaranteed within 1 minute.
Since it is placed on the 11.0 layer of electrostatic damage protection, it will not be damaged by static electricity during normal use.

[Brief explanation of the drawing]

Fig. 1 is a block diagram of the safety device showing the key and receptacle, Fig. 2 is a perspective view of the key separated from the receptacle, Fig. 3 is a plan view illustrating the internal state of the key, and Fig. 4 is a block diagram of the safety device showing the key and receptacle. , is an enlarged sectional view of the head portion thereof. lO...Key, 13...Shaft part, 12...Head part, 15.16...Groove, 1st floor, 18...Conductive contact point, 20...Indentation, 21... Bonding terminal, 23・
... Wiring, 24... Ceramic layer, 30.43a.
... Metal plating layer, 40... Memory, 41... Chip, 42... Zener diode substrate layer, 43... First ceramic layer, 44... Second ceramic layer, 45... Third 3 ceramic layer, 46... fourth ceramic layer, 47... fifth ceramic layer, 47... sixth ceramic layer, 50... receptacle, 51... socket, 52... cylinder, 53 ...
switch.

Claims (3)

[Claims] (1) A key or card having a memory, by being inserted into a receptacle provided in a target system, the memory of the key or card becomes part of the memory of the target system, and the memory chip or this chip A substrate to which is bonded is placed on an electrostatic breakdown prevention layer, and bonding wires for the chip are connected to external terminals via corresponding terminals provided on the electrostatic breakdown prevention layer. security key. (2) The security key according to claim 1, wherein the memory is built in the head portion of the key, and the electrostatic breakdown prevention layer is a Zener diode layer. (3) The security key according to claim 2, wherein the Zener diode layer and the memory chip or the substrate to which this chip is bonded are fused by a gold layer.