JPS62256758A - Low temperature sintered ceramic composition for multilayer substrate - Google Patents

Low temperature sintered ceramic composition for multilayer substrate

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Publication number
JPS62256758A
JPS62256758A JP61099010A JP9901086A JPS62256758A JP S62256758 A JPS62256758 A JP S62256758A JP 61099010 A JP61099010 A JP 61099010A JP 9901086 A JP9901086 A JP 9901086A JP S62256758 A JPS62256758 A JP S62256758A
Authority
JP
Japan
Prior art keywords
weight
ceramic composition
sintered ceramic
temperature
multilayer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61099010A
Other languages
Japanese (ja)
Other versions
JPH0676256B2 (en
Inventor
治文 万代
公英 須郷
塚本 和吉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
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Priority to JP61099010A priority Critical patent/JPH0676256B2/en
Publication of JPS62256758A publication Critical patent/JPS62256758A/en
Publication of JPH0676256B2 publication Critical patent/JPH0676256B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 (産業上の利用分野) この発明は、多層基板用低温焼結磁器組成物に関し、特
に、複数の磁器層が積層され、磁器間に回路が形成され
てなる多層磁器基板に適した、多層基板用低温焼結磁器
組成物に関する。
Detailed Description of the Invention (Industrial Application Field) The present invention relates to a low-temperature sintered porcelain composition for a multilayer substrate, and in particular to a multilayer porcelain composition in which a plurality of porcelain layers are laminated and a circuit is formed between the porcelains. The present invention relates to a low-temperature sintered ceramic composition for multilayer substrates, which is suitable for substrates.

(従来技術) 一般に、電子機器の小型化に伴い、電気回路を構成する
各種電子部品を実装するのに磁器基板が汎用され、最近
では、実装密度をざらに高めるため、表面に導電材料で
回路パターンを形成した未焼成の磁器シートを複数枚積
層し、これを焼成して一体化した多層磁器基板が開発さ
れている。この種の多層磁器基板の磁器材料にはアルミ
ナが用いられているが、その焼結温度は1500〜16
00℃と高温であるため、次のような問題があった。ま
ず、焼結に多量のエネルギを必要とするため製造コスト
が高くなる。また、基板内部に形成きれる内部回路など
の導電材料が、たとえば、高温の焼結温度に耐えられる
タングステンやモリブデンなどに限定されるため、内部
回路などの抵抗が大きくなる。そして、アルミナの熱膨
張係数がシリコンチップのそれよりも大きいため、シリ
コンチップにサーマルストレスかがかり、クラックの原
因になることなどである。そこで、これらの問題を解決
するために、低温で焼結させることができる基板用磁器
組成物として、アルミナに多量の結晶化ガラス成分を添
加したもの、あるいは特開昭57−184289号公報
に開示されている組成物のように、BaSnO3にホウ
素を多量に添加したものが用いられている。また、特開
昭60−226454号公報、あるいは特開昭60−2
27311号公報に開示きれているように、アルミナ、
シリカ、アルカリ土類金属酸化物、ホウ素、酸化リチウ
ム、酸化亜鉛などの成分からなるものが用いられている
(Prior art) Generally, with the miniaturization of electronic devices, ceramic substrates are commonly used to mount various electronic components that make up electric circuits. A multilayer porcelain substrate has been developed in which a plurality of patterned unfired porcelain sheets are laminated and then fired and integrated. Alumina is used as the porcelain material for this type of multilayer porcelain substrate, and its sintering temperature is 1500 to 16
Because the temperature was as high as 00°C, there were the following problems. First, sintering requires a large amount of energy, which increases manufacturing costs. Further, since the conductive materials that can be formed inside the substrate, such as internal circuits, are limited to materials such as tungsten and molybdenum that can withstand high sintering temperatures, the resistance of the internal circuits and the like increases. Furthermore, since the coefficient of thermal expansion of alumina is larger than that of the silicon chip, thermal stress is applied to the silicon chip, causing cracks. Therefore, in order to solve these problems, as a ceramic composition for a substrate that can be sintered at a low temperature, a ceramic composition in which a large amount of crystallized glass component is added to alumina, or as disclosed in JP-A-57-184289, has been proposed. As shown in the composition described above, BaSnO3 with a large amount of boron added thereto is used. Also, JP-A No. 60-226454, or JP-A No. 60-2
As disclosed in Publication No. 27311, alumina,
Those containing components such as silica, alkaline earth metal oxides, boron, lithium oxide, and zinc oxide are used.

(発明が解決しようとする問題点) しかしながら、アルミナに多量の結晶化ガラス成分を添
加した組成物では、得られた磁器に空孔が多数存在し、
空孔を介して導体路間にマイグレーションが発生すると
いう問題が生じる。また、特開昭57−184289号
公報に開示された組成物では、仮焼物がガラス状となる
ので、その粉砕が困難となるばかりでなく、焼成の際に
ホウ素が激しく蒸発し、導電材料と反応したり、炉の材
料に損傷を与えたりするという問題が生じる。また、特
開昭60−226454号公報、特開昭60−2273
11号公報に開示きれた組成物につい、でも、多量のホ
ウ素を用いるため、同様の問題を生じる。また、多量の
ホウ素の存在はサーメット抵抗体をその表面に形成した
場合に抵抗体を劣化させるという問題を生じる。さらに
、表面に導体を形成すると、多量のホウ素の存在で導体
の特性を劣化させる。
(Problems to be Solved by the Invention) However, in a composition in which a large amount of crystallized glass component is added to alumina, a large number of pores are present in the resulting porcelain.
A problem arises in that migration occurs between the conductor paths via the holes. Furthermore, in the composition disclosed in JP-A-57-184289, the calcined material becomes glassy, which not only makes it difficult to crush, but also causes the boron to evaporate violently during firing, resulting in a conductive material. Problems arise with reactions and damage to the materials in the furnace. Also, JP-A No. 60-226454, JP-A No. 60-2273
However, the composition disclosed in Japanese Patent No. 11 suffers from similar problems because it uses a large amount of boron. Further, the presence of a large amount of boron causes a problem of deterioration of the resistor when a cermet resistor is formed on the surface thereof. Furthermore, when a conductor is formed on the surface, the presence of a large amount of boron deteriorates the characteristics of the conductor.

(発明の目的) それゆえに、この発明の主たる目的は、低い温度で焼成
でき、特性的には比抵抗が高く、かつ誘電率が低く、さ
らに誘電体損失が小ざく、しかも熱膨張係数がアルミナ
以下である多層基板用低温焼結磁器組成物を提供するこ
とである。
(Objective of the Invention) Therefore, the main object of the present invention is to be able to sinter at a low temperature, have high specific resistance, low dielectric constant, small dielectric loss, and have a thermal expansion coefficient similar to that of aluminium. An object of the present invention is to provide a low-temperature sintered ceramic composition for a multilayer substrate as follows.

また、この発明の目的は、非酸化性雰囲気でしかも10
00℃以下の低温で焼結可能であり、導体として1(C
u)、ニッケル(Ni)などの卑金属を用いることがで
きる多層基板用低温焼結磁器組成物を提供することであ
る。
Further, the object of this invention is to provide a non-oxidizing atmosphere with 10
It can be sintered at low temperatures below 00°C, and can be used as a conductor.
u) To provide a low-temperature sintered ceramic composition for a multilayer substrate in which base metals such as nickel (Ni) can be used.

(問題点を解決するための手段) この発明は、Si成分がS i 02に換算して25〜
70重量%、Sr成分がSrOに換算して25〜60重
量%、A1成分がAl2O3に換算して1重量%〜30
重量%、Ca成分がCaOに換算して0重量%を超え2
0重重量以下、B成分がB2O3に換算して1.5重量
%〜5重量%、含まれる多層基板用低温焼結磁器組成物
である。
(Means for Solving the Problems) This invention has a Si component of 25 to 25 in terms of Si02.
70% by weight, Sr component is 25 to 60% by weight in terms of SrO, A1 component is 1% to 30% by weight in terms of Al2O3
Weight%, Ca component exceeds 0% by weight in terms of CaO2
This is a low-temperature sintered ceramic composition for a multilayer substrate, which contains a B component of 1.5% to 5% by weight in terms of B2O3.

なお、微量添加物として、Li01K20、Na20な
どのアルカリ金属酸化物の少なくとも1種を1.0重量
%以下添加するようにしてもよい。アルカリ金属酸化物
を添加するのは焼成温度をさらに下げられるからである
Note that at least one kind of alkali metal oxide such as Li01K20 and Na20 may be added as a trace additive in an amount of 1.0% by weight or less. The reason for adding an alkali metal oxide is that the firing temperature can be further lowered.

この発明の多層基板用低温焼結磁器組成物を用いて多層
回路基板を製造する場合、たとえば、Si、5rXAl
、CaおよびBの酸化物もしくは焼成時に分解して酸化
物となる化合物の粉末を秤量、調合し、その原料混合物
を850〜950℃で仮焼した後、粉砕し、その粉末を
バインダと混練してからシート状に成形し、次いで、得
られたグリーンシートを酸化性雰囲気あるいは非酸化性
雰囲気中、850〜1000℃で焼成すればよい。また
、多層回路基板を製造する場合、グリーンシート上にA
g、Ag−Pd、Cu、Niなどの導電材料を含有する
導電性ペーストで回路パターンを印刷し、それらを複数
枚積層してから、導電性ペーストを構成する導電材料に
応じた雰囲気で焼成すればよい。内部導電材料としてC
uやNiなとの卑金属を使用する場合、それらの酸化を
防止するため、非酸化性の雰囲気で焼成するのが好まし
い。たとえば、窒素をキャリアガスとして水蒸気(70
℃)中を通過させ、酸素および水素の含有量を微量含有
きせな窒素−水蒸気雰囲気(通常、N299.7〜99
.8%)中、850−1000℃で焼成するのが好まし
い。なお、酸素を微量含有させるのは、グリーンシート
の形成に使用するバインダを仮焼段階で、炭素として残
存させないために、完全に燃焼させて除去するためであ
る。
When manufacturing a multilayer circuit board using the low-temperature sintered ceramic composition for multilayer boards of the present invention, for example, Si, 5rXAl
, Ca and B oxides, or powders of compounds that decompose into oxides during firing are weighed and prepared, the raw material mixture is calcined at 850 to 950°C, then crushed, and the powder is kneaded with a binder. Then, the green sheet obtained is fired at 850 to 1000°C in an oxidizing atmosphere or a non-oxidizing atmosphere. In addition, when manufacturing multilayer circuit boards, A
A circuit pattern is printed using a conductive paste containing a conductive material such as G, Ag-Pd, Cu, or Ni, and then multiple sheets of these are laminated and then fired in an atmosphere appropriate for the conductive material that makes up the conductive paste. Bye. C as internal conductive material
When using base metals such as u or Ni, it is preferable to sinter in a non-oxidizing atmosphere in order to prevent their oxidation. For example, water vapor (70%
°C) and pass through a fine nitrogen-steam atmosphere (usually N299.7~99°C) containing trace amounts of oxygen and hydrogen.
.. 8%), preferably calcined at 850-1000°C. The reason why a small amount of oxygen is included is to completely burn off and remove the binder used for forming the green sheet during the calcination stage so that it does not remain as carbon.

この発明の上述の目的、その他の目的、特徴および利点
は、以下の実施例の詳細な説明から一層明らかになろう
The above objects, other objects, features and advantages of the present invention will become more apparent from the detailed description of the following embodiments.

(実施例1) 原料として、S i02、SrCO3または5rO1A
1203、CaOまたはCa CO3、B2O3もしく
はBNまたはB4C,を、別表1の組成になるように秤
量して混合した。この混合物を850〜950℃で仮焼
し、粉砕した後、有機バインダを加えて混練し、ドクタ
ーブレード法によって厚さ1mmのシート状に成形した
。このグリーンシートを縦30mm、横10mmにカッ
トし、これを空気中、別表1に示す各温度で1時間焼成
して磁器を得た。また、このグリーンシートを樅3mm
、横20mmの角板状にカットして、これを3枚積層し
、2000Kg/Cm2で加圧し角柱状にした。そして
、これを上述の方法で焼成し、熱膨張測定用の試料とし
た。
(Example 1) As a raw material, Si02, SrCO3 or 5rO1A
1203, CaO or Ca CO3, B2O3 or BN or B4C, were weighed and mixed to have the composition shown in Attached Table 1. This mixture was calcined at 850 to 950°C, pulverized, then kneaded with an organic binder and formed into a sheet with a thickness of 1 mm using a doctor blade method. This green sheet was cut into pieces 30 mm long and 10 mm wide, and fired in air at each temperature shown in Attached Table 1 for 1 hour to obtain porcelain. Also, use this green sheet as fir 3mm.
It was cut into a rectangular plate shape with a width of 20 mm, and three of these plates were laminated and pressed at 2000 kg/cm2 to form a rectangular column shape. This was then fired by the method described above to obtain a sample for thermal expansion measurement.

これらの試料について、次のとおり各特性をそれぞれの
条件や測定方法で測、定し、別表1に示す結果を得た。
Regarding these samples, each characteristic was measured and determined using the respective conditions and measurement methods as follows, and the results shown in Attached Table 1 were obtained.

なお、比抵抗については、いずれも1XIO13Ω・a
m以上の値が得られた。
In addition, regarding the specific resistance, both are 1XIO13Ω・a
A value of m or more was obtained.

誘電率:IMHzの条件 誘電体損失:IMHzの条件 比抵抗:直流100■の条件 抗折強度二次の(1)式より算出 式中、Tr:抗折強度、 P :試料が切断したときの荷重(Xg)l :支点間
距離(am) b =試料の輻(am) d :試料の厚さくam) 熱膨張係数:次の(2)式より算出 式中、α :熱膨張係数 ΔL:加熱による試料の見掛けの伸び (mm) L :室温での試料の長き(mm) T1:室温 T  : 500℃ αS i O2’石英ガラスの熱膨張係数また、これと
は別に同じ方法で厚さ0.3〜0.4mmのグリーンシ
ートを作成する一方、粒径5μm以下のAgまたはAg
−Pdの導電材料粉末と有機質ビヒクルとを重量比80
 : 20の割合で混合して導電ペーストを調整して、
前述のグリーンシートの表面に各導電性ペーストを全面
に印刷し、これを3枚積層して熱圧着し、別表1に示す
各温度にて空気中で焼成した。なお、有機質ビヒクルは
、エチルセルロースをα−テレピネオールで10倍に希
釈したものを使用した。
Dielectric constant: IMHz condition Dielectric loss: IMHz condition Specific resistance: DC 100μ condition Transverse strength Calculated from the quadratic equation (1) In the formula, Tr: Transverse strength, P: When the sample is cut Load (Xg) l: Distance between fulcrums (am) b = Convergence of sample (am) d: Thickness of sample (am) Coefficient of thermal expansion: Calculated from the following formula (2), α: Coefficient of thermal expansion ΔL: Apparent elongation of the sample due to heating (mm) L: Length of the sample at room temperature (mm) T1: Room temperature T: 500°C αS i O2' Thermal expansion coefficient of silica glass .3 to 0.4 mm green sheets are created, while Ag or Ag particles with a particle size of 5 μm or less are produced.
- Pd conductive material powder and organic vehicle at a weight ratio of 80
: Adjust the conductive paste by mixing at a ratio of 20:
Each of the conductive pastes was printed on the entire surface of the green sheet described above, three of these sheets were laminated, thermocompression bonded, and fired in air at each temperature shown in Attached Table 1. The organic vehicle used was ethyl cellulose diluted 10 times with α-terpineol.

こうして得られた多層磁器基板について、磁器とAgま
たはAg−Pdとの反応を分析したところ、両者間での
反応は見られず、AgおよびAg−Pdはいずれも良好
な導電性を示し、Agの面積抵抗は2mΩ/口で、A 
g −P dの面積抵抗は20mΩ/口であった。
When the reaction between the porcelain and Ag or Ag-Pd was analyzed for the thus obtained multilayer ceramic substrate, no reaction was observed between the two, and both Ag and Ag-Pd showed good conductivity. The areal resistance of A is 2mΩ/mouth.
The sheet resistance of g-Pd was 20 mΩ/hole.

(実施例2) 実施例1で作成した厚き1mmのグリーンシートを用い
、Fif30mm、横10mmの角板状にカットし、こ
れを水蒸気(70℃)中に通過ぎせた窒素をキャリアガ
スとする窒素−水蒸気の非酸化性雰囲気中900℃の温
度で熱処理してグリーンシート中のバインダを完全燃焼
させ、次いで別表2に示した各温度で1時間焼成して試
料とした。また、実施例1と同様にして、加圧成形した
角柱状の試料についても、上述と同じ焼成を行ない、熱
膨張係数測定用の試料とした。そして、これらの試料を
用いて、実施例1と同様の条件で出!1定した各特性に
ついて測定し、別表2の結果を得た。なお、比抵抗につ
いては、いずれもlX1013Ω・Cm以上の値が得ら
れた。
(Example 2) Using the 1 mm thick green sheet prepared in Example 1, cut it into a rectangular plate shape with a fift of 30 mm and a width of 10 mm, and passed it through water vapor (70°C). Nitrogen was used as a carrier gas. The green sheets were heat treated at a temperature of 900° C. in a non-oxidizing nitrogen-steam atmosphere to completely burn out the binder in the green sheets, and then fired for 1 hour at each temperature shown in Attached Table 2 to prepare samples. Further, in the same manner as in Example 1, a pressure-molded prismatic sample was also fired in the same manner as described above, and was used as a sample for measuring the coefficient of thermal expansion. Then, using these samples, test was carried out under the same conditions as in Example 1! Each of the determined characteristics was measured, and the results shown in Attached Table 2 were obtained. In addition, regarding the specific resistance, a value of 1×10 13 Ω·Cm or more was obtained in all cases.

また、実施例1の後半で述べた厚き0.3〜0.4mm
のグリーンシートを用い、その表面上に粒径5μm以下
の銅粉末と有機質ビヒクルとを重量比80:20の割合
で混合した銅ペーストを印刷し、これを3枚積層して熱
圧着し、窒素−水蒸気の非酸化性雰囲気中、別表2に示
す各温度で1時間焼成した。こうして得た多層磁器基板
のCu導体は酸化されておらず、良好な導電性を示し、
その面積抵抗は2mΩ/口であった。
In addition, the thickness of 0.3 to 0.4 mm described in the latter half of Example 1
Using a green sheet of - Calcined for 1 hour at each temperature shown in Attached Table 2 in a non-oxidizing atmosphere of water vapor. The Cu conductor of the multilayer ceramic substrate obtained in this way is not oxidized and exhibits good conductivity.
Its sheet resistance was 2 mΩ/mouth.

別表1、別表2の結果は次の基準に従って判定された。The results in Attached Tables 1 and 2 were judged according to the following criteria.

焼結温度:1000℃以下(Cu導体およびAg−Pd
導体の使用可能な温度、た だしAg−Pd導体はAg : Pd=80 : 20
のもの) 誘電率(ε):IMHzの条件下で10以下(アルミナ
の誘電率の値以下) 誘電体損失(tanδ):IMHzの条件下で0゜2%
以下 抗折強度:1500Kg/cm2以上 熱膨張係数: 8.0X10−6/”C以下非酸化性雰
囲気で使用できるサーメット抵抗を表面に形成した場合
、この発明にかかる多層磁器基板上のサーメット抵抗は
アルミナ基板と同等の特性が得られた。またB2O3f
tを6買置%にすると半田付は性が悪くなることが確認
された。
Sintering temperature: 1000℃ or less (Cu conductor and Ag-Pd
Usable temperature of conductor, except for Ag-Pd conductor: Ag: Pd = 80: 20
) Dielectric constant (ε): 10 or less under IMHz conditions (less than the dielectric constant of alumina) Dielectric loss (tan δ): 0°2% under IMHz conditions
When a cermet resistor that can be used in a non-oxidizing atmosphere is formed on the surface, the cermet resistor on the multilayer ceramic substrate according to the present invention is Properties equivalent to those of the alumina substrate were obtained.
It was confirmed that when t was set to 6%, soldering performance deteriorated.

なお、別表1および別表2において、*印を付したもの
はこの発明範囲外のものであり、それ以外はこの発明範
囲内のものである。
In addition, in Attached Table 1 and Attached Table 2, those marked with * are outside the scope of this invention, and the others are within the scope of this invention.

別表1および別表2から明らかなように、この発明の多
層基板用低温焼結磁器組成物における組成範囲を前記し
た範囲に限定した理由は次の通りである。
As is clear from Attached Tables 1 and 2, the reason why the composition range of the low temperature sintered ceramic composition for multilayer substrates of the present invention is limited to the above range is as follows.

(1)S i02が70重旦%を超えると、抗折強度が
1500Kg/cm2未満になり、かつ焼結温度が10
00℃より高くなるので好ましくない(試料番号1参照
)。一方、5102が25重旦%未満では、誘電率が1
0より大きくなるので好ましくない(試料番号4参照)
(1) When Si02 exceeds 70%, the bending strength becomes less than 1500Kg/cm2, and the sintering temperature becomes 10%.
It is not preferable because it becomes higher than 00°C (see sample number 1). On the other hand, when 5102 is less than 25%, the dielectric constant is 1
This is not preferable because it is larger than 0 (see sample number 4).
.

(2)SrOが60重旦%を超えると、誘電率が10よ
り大きくなるので好ましくない(試料番号5参照)。一
方、SrOが25重重量未満では、焼結温度が1000
℃より高くなり好ましくない(試料番号8参照)。
(2) If SrO exceeds 60% by weight, the dielectric constant becomes greater than 10, which is not preferable (see sample number 5). On the other hand, when SrO is less than 25% by weight, the sintering temperature is 1000%
℃, which is not preferable (see sample number 8).

(3)A1203が30重重量を越えると、誘電体損失
が0.2%より大きくなり好ましくない(試料番号9#
照)。一方、Al2O3が1重量%未満のときは、焼結
温度が1000℃より高くなり好ましくない(試料番号
12参照)。
(3) If the weight of A1203 exceeds 30%, the dielectric loss will be greater than 0.2%, which is undesirable (sample number 9#
(see). On the other hand, when Al2O3 is less than 1% by weight, the sintering temperature becomes higher than 1000°C, which is not preferable (see sample number 12).

(4)CaOが20!ffi%を超えると、焼結温度が
1000℃より高くなり好ましくない(試料番号13参
照)。一方、CaOが含有きれていないときは、熱膨張
係数が8.OXI○−6/℃より大きくなり好ましくな
い(試料番号15参照)。
(4) CaO is 20! If it exceeds ffi%, the sintering temperature will become higher than 1000°C, which is not preferable (see sample number 13). On the other hand, when CaO is not fully contained, the thermal expansion coefficient is 8. OXI○-6/°C, which is not preferable (see sample number 15).

(5)B203が5重量%を越えると、抗折強度が15
00Kg/cm2より小さくなり好ましくない(試料番
号16参照)。一方、B2O3が1゜5重量%未満では
、焼結温度が1000℃より高くなるので好ましくない
(試料番号19参照)。
(5) When B203 exceeds 5% by weight, the bending strength is 15%.
00Kg/cm2, which is not preferable (see sample number 16). On the other hand, if B2O3 is less than 1.5% by weight, the sintering temperature will be higher than 1000°C, which is not preferable (see sample number 19).

(発明の効果) この発明によれば、高比抵抗かつ低誘電率で誘電体損失
が少なく、しかも熱膨張例数がアルミナよりも小きくな
る。また、製造過程においても仮焼後の粉砕などの処理
がしやすく、しかも、1000℃以下で博成で矢、勺イ
li+′I−!開供中あ不いけ非酸化性雰囲気中で焼成
しても、電気的特性、物理的特性さらには熱的特性の変
化がなく、内部導体との反応も見られないので、内部導
体材料として、たとえば、Ag、Ag−Pdペースト、
CuおよびNiなとの卑金属を使用することができ、多
層基板のコストダウンを図ることができる。
(Effects of the Invention) According to the present invention, the material has high resistivity and low dielectric constant, has low dielectric loss, and has a smaller number of thermal expansion cases than alumina. In addition, in the manufacturing process, processing such as crushing after calcination is easy, and moreover, it can be heated at temperatures below 1000°C. Even when fired in a non-oxidizing atmosphere during operation, there is no change in electrical, physical, or thermal properties, and no reaction with the internal conductor is observed, so it can be used as an internal conductor material. For example, Ag, Ag-Pd paste,
Base metals such as Cu and Ni can be used, and the cost of the multilayer board can be reduced.

去た、熱膨張係数がアルミナ以下であるため、サーマル
ストレスによるクラックが生じにくくなる。さらに、サ
ーメット抵抗材料などを印刷して、抵抗体も形成するこ
とができる。
Since the coefficient of thermal expansion is less than that of alumina, cracks are less likely to occur due to thermal stress. Furthermore, a resistor can also be formed by printing a cermet resistive material or the like.

Claims (1)

【特許請求の範囲】[Claims] (1)Si成分がSiO_2に換算して25〜70重量
%、 Sr成分がSrOに換算して25〜60重 量%、 Al成分がAl_2O_3に換算して1重量%〜30重
量%、 Ca成分がCaOに換算して0重量%を超え20重量%
以下、 B成分がB_2O_3に換算して1.5重量%〜5重量
%、 含まれる多層基板用低温焼結磁器基板。
(1) The Si component is 25 to 70% by weight in terms of SiO_2, the Sr component is 25 to 60% by weight in terms of SrO, the Al component is 1 to 30% by weight in terms of Al_2O_3, and the Ca component is More than 0% by weight and 20% by weight in terms of CaO
Hereinafter, a low-temperature sintered ceramic substrate for a multilayer substrate contains a B component of 1.5% to 5% by weight in terms of B_2O_3.
JP61099010A 1986-04-28 1986-04-28 Low temperature sintered porcelain composition for multilayer substrate Expired - Lifetime JPH0676256B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61099010A JPH0676256B2 (en) 1986-04-28 1986-04-28 Low temperature sintered porcelain composition for multilayer substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61099010A JPH0676256B2 (en) 1986-04-28 1986-04-28 Low temperature sintered porcelain composition for multilayer substrate

Publications (2)

Publication Number Publication Date
JPS62256758A true JPS62256758A (en) 1987-11-09
JPH0676256B2 JPH0676256B2 (en) 1994-09-28

Family

ID=14235115

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61099010A Expired - Lifetime JPH0676256B2 (en) 1986-04-28 1986-04-28 Low temperature sintered porcelain composition for multilayer substrate

Country Status (1)

Country Link
JP (1) JPH0676256B2 (en)

Also Published As

Publication number Publication date
JPH0676256B2 (en) 1994-09-28

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