JPS62187160A - Low temperature sinterable ceramic composition for multi-layer substrate - Google Patents

Low temperature sinterable ceramic composition for multi-layer substrate

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Publication number
JPS62187160A
JPS62187160A JP61027030A JP2703086A JPS62187160A JP S62187160 A JPS62187160 A JP S62187160A JP 61027030 A JP61027030 A JP 61027030A JP 2703086 A JP2703086 A JP 2703086A JP S62187160 A JPS62187160 A JP S62187160A
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JP
Japan
Prior art keywords
weight
ceramic composition
less
low temperature
layer substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61027030A
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Japanese (ja)
Other versions
JPH0676254B2 (en
Inventor
治文 万代
公英 須郷
塚本 和吉
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Murata Manufacturing Co Ltd
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Murata Manufacturing Co Ltd
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Publication of JPS62187160A publication Critical patent/JPS62187160A/en
Publication of JPH0676254B2 publication Critical patent/JPH0676254B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 (産業上の利用分野) この発明は、多層基板用低温焼結磁器組成物に関し、特
に、複数のシート状磁器を積層し、磁器間に回路を形成
してなる多層電気回路基板に適した、多層基板用低温焼
結磁器組成物に関する。
Detailed Description of the Invention (Industrial Application Field) The present invention relates to a low-temperature sintered porcelain composition for multilayer substrates, and in particular to a multilayer porcelain composition formed by laminating a plurality of sheet-like porcelains and forming a circuit between the porcelains. The present invention relates to a low-temperature sintered ceramic composition for multilayer substrates, which is suitable for electric circuit boards.

(従来技術) 一般に、電子゛機器の小型化に伴い、電気回路を構成す
る各種電子部分を実装するのに磁器基板が汎用され、最
近では、実装密度をさらに高めるため、表面に導電材料
で回路を形成した磁器シートを複数枚積層してなる多層
磁器基板が開発されている。この種の多層磁器基板の磁
器材料にはアルミナが用いられているが、その焼結温度
は1500〜1600℃と高温であるため、次のような
問題があった。まず、焼結に多量のエネルギを必要とす
るため製造コストが高くなる。また、基板内部に形成さ
れる内部回路などの導電材料が、たとえば、高温の焼結
温度に耐えられるタングステンやモリブデンなどに限定
されるため、内部回路などの抵抗が大きくなる。そして
、アルミナの熱膨張係数がシリコンチップのそれよりも
大きいため、シリコンチップにサーマルストレスがかか
り、クラックの原因になることなどである。そこで、こ
れらの問題を解決するために、低温で焼結させることが
できる基板用磁器組成物として、アルミナに多量の結晶
化ガラス成分を添加したもの、あるいは特開昭57−1
84289号公報に開示されている組成物のように、B
a5nO,にホウ素を多量に添加したものが用いられて
いる。
(Prior art) Generally, with the miniaturization of electronic devices, ceramic substrates are commonly used to mount various electronic parts that make up electric circuits. A multilayer porcelain substrate made by laminating a plurality of porcelain sheets has been developed. Alumina is used as the ceramic material for this type of multilayer ceramic substrate, but its sintering temperature is as high as 1,500 to 1,600°C, which causes the following problems. First, sintering requires a large amount of energy, which increases manufacturing costs. Further, since the conductive material for the internal circuits formed inside the substrate is limited to, for example, tungsten or molybdenum, which can withstand high sintering temperatures, the resistance of the internal circuits becomes large. Furthermore, since the coefficient of thermal expansion of alumina is larger than that of the silicon chip, thermal stress is applied to the silicon chip, causing cracks. Therefore, in order to solve these problems, as a ceramic composition for a substrate that can be sintered at a low temperature, a ceramic composition in which a large amount of crystallized glass component is added to alumina, or JP-A-57-1
As in the composition disclosed in Publication No. 84289, B
A5nO, to which a large amount of boron is added, is used.

(発明が解決しようとする問題点) しかしながら、アルミナに多量の結晶化ガラス成分を添
加した組成物では、得られた磁器に空孔が多数存在し、
空孔を介して導体路間にマイグレーションが発生すると
いう問題点が生じる。また、特開昭57−184289
号公報に開示された組成物では、仮焼物がガラス状とな
るので、その粉砕が困難となるばかりでなく、焼成の際
にホウ素が激しく蒸発し、導電材料と反応したり炉の材
料に損傷を与えたりするという問題が生じる。
(Problems to be Solved by the Invention) However, in a composition in which a large amount of crystallized glass component is added to alumina, a large number of pores are present in the resulting porcelain.
A problem arises in that migration occurs between the conductor paths via the holes. Also, JP-A-57-184289
With the composition disclosed in the publication, the calcined product becomes glassy, which not only makes it difficult to crush, but also causes boron to evaporate violently during firing, causing it to react with the conductive material and damage the furnace material. The problem arises of giving.

それゆえに、この発明の主たる目的は、低い温度で焼成
でき、特性的には比抵抗が高くかつ誘電率が低くさらに
誘電体損失が小さく、しかも熱膨張係数がアルミナ以下
である多層基板用低温焼結磁器組成物を提供することで
ある。
Therefore, the main object of the present invention is to provide a low-temperature sintered multilayer substrate that can be sintered at a low temperature, has high specific resistance, low dielectric constant, and low dielectric loss, and has a thermal expansion coefficient of alumina or less. An object of the present invention is to provide a porcelain composition.

(問題点を解決するための手段) この発明は、Si成分がSin、に換算して25〜80
1iffi%、Ba成分がBaOに換算して15〜70
重量%、B成分がB20.に換算して1.5〜5重量%
、A1成分がAJZ03に換算して1〜30重量%、M
g成分がMgOに換算して0重量%を超え15重量%以
下含まれる、多層基板用低温焼結磁器組成物である。
(Means for Solving the Problems) In this invention, the Si component is 25 to 80 in terms of Sin.
1iffi%, Ba component is 15-70 in terms of BaO
Weight %, B component is B20. 1.5 to 5% by weight converted to
, A1 component is 1 to 30% by weight in terms of AJZ03, M
This is a low-temperature sintered ceramic composition for a multilayer substrate, which contains g component in an amount of more than 0% by weight and not more than 15% by weight in terms of MgO.

なお、微量添加物として、Li2O,に20゜Na、O
などのアルカリ金属酸化物の少な(とも1種を1.0重
量%以下添加するようにしてもよい。
In addition, as trace additives, 20°Na, O, and Li2O are added.
A small amount of alkali metal oxides such as (1 type or less) may be added in an amount of 1.0% by weight or less.

この発明の電気回路基板用磁器組成物を用いて電気回路
基板を製造する場合、たとえば、Si、Ba、、B、A
1およびMgの酸化物もしくは焼成時に分解して酸化物
となる化合物の粉末を秤量、調合し、その原料混合物を
850〜950℃で仮焼した後、粉砕し、その粉末をバ
インダと混練してからシート状に成形し、次いで、得ら
れたグリーンシートを酸化性雰囲気あるいは非酸化性も
しくは還元性雰囲気中、850〜1000℃で焼成すれ
ばよい。また、多層電気回路基板を製造する場合、グリ
ーンシート上にAg、Ag−Pd、Cu、Niなどの導
電材料を含有する導電性ペーストで回路を印刷し、それ
らを複数積層してから、導電性ペーストを構成する導電
材料に応じた雰囲気中で焼成すればよい、内部導電材料
としてCuやNiなどの卑金属を使用する場合、それら
の酸化を防止するため、非酸化性もしくは還元性の雰囲
気中で焼成するのが好ましい。たとえば、窒素をキャリ
アガスとして水蒸気(70℃)中を通過させ、酸素およ
び水素の含有量を微量含有させた窒素−水蒸気雰囲気(
通常、Nt99.7〜99.8%)中、850〜100
0℃で焼成するのが好ましい。なお、酸素を微量含有さ
せるのは、グリーンシートの形成に使用するバインダが
仮焼しても、炭素として残存しているため、これを完全
燃焼させて除去するためである。
When manufacturing an electric circuit board using the ceramic composition for electric circuit boards of the present invention, for example, Si, Ba, B, A
1 and Mg oxide or a powder of a compound that decomposes during firing to become an oxide is weighed and prepared, the raw material mixture is calcined at 850 to 950°C, then crushed, and the powder is kneaded with a binder. The green sheet may be formed into a sheet shape, and then the obtained green sheet may be fired at 850 to 1000°C in an oxidizing atmosphere, a non-oxidizing atmosphere, or a reducing atmosphere. In addition, when manufacturing a multilayer electric circuit board, a circuit is printed on a green sheet with a conductive paste containing a conductive material such as Ag, Ag-Pd, Cu, or Ni, and after laminating multiple layers of them, the conductive material is The paste may be fired in an atmosphere appropriate for the conductive material that makes up the paste. When using base metals such as Cu or Ni as internal conductive materials, firing may be performed in a non-oxidizing or reducing atmosphere to prevent oxidation of the base metals. Preferably, it is fired. For example, nitrogen is passed through water vapor (70°C) as a carrier gas to create a nitrogen-steam atmosphere containing trace amounts of oxygen and hydrogen.
Normally, Nt99.7-99.8%), 850-100
It is preferable to bake at 0°C. Note that the reason why a small amount of oxygen is included is that even if the binder used to form the green sheet is calcined, it remains as carbon, so that this is completely burned and removed.

この発明の上述の目的、その他の目的、特徴および利点
は、以下の実施例の詳細な説明から一層明らかとなろう
The above objects, other objects, features and advantages of the present invention will become more apparent from the detailed description of the following embodiments.

(実施例■) 原料として13acO+またはBa02S i Oz、
Alx 03 、Bz O+もしくはBNまたはB4C
lMgOまたはM g CO3を、別表1の組成となる
ように秤量して混合した。この混合物を850〜950
℃で仮焼し、粉砕した後、有機バインダを加えて混練し
て、ドクターブレード法によって厚さ1flのシート状
に成形した。このグリーンシートを縦3011.横10
mmにカットし、これを空気中、850〜1000℃で
1時間焼成して磁器を得た。また、このグリーンシート
を縦3m、横20鶴の角板状にカントして、これを3枚
積層し、200kg/aaで加圧し角柱状にした。そし
て、これを上述の方法で焼成し、熱膨張測定用の試料と
した。
(Example ■) 13acO+ or Ba02S i Oz as a raw material,
Alx 03 , Bz O+ or BN or B4C
1MgO or MgCO3 was weighed and mixed to have the composition shown in Attached Table 1. Add this mixture to 850-950
After calcining at °C and pulverizing, an organic binder was added and kneaded, and the mixture was formed into a sheet with a thickness of 1 fl by a doctor blade method. This green sheet is 3011mm long. horizontal 10
It was cut into pieces of mm and fired in air at 850 to 1000°C for 1 hour to obtain porcelain. Further, this green sheet was canted into a rectangular plate shape with a length of 3 m and a width of 20 squares, and three of these sheets were laminated and pressed at 200 kg/aa to form a prismatic shape. This was then fired by the method described above to obtain a sample for thermal expansion measurement.

これらの試料について、次のとおり各特性をそれぞれの
条件や測定方法で測定し、別表1の結果を得た。
Regarding these samples, each characteristic was measured using the respective conditions and measurement methods as follows, and the results shown in Attached Table 1 were obtained.

誘 電 率:IMHzの条件 誘電体損失:IMHzの条件 比 抵 抗:直流100Vの条件 抗折 強度:次の(1)式より算出 Tr:抗折強度、P:試料が折断したときの荷重(kg
) 、  Il 、支点間距離(am)、b:試料の幅
(cm)、d:試料の厚さくcm)熱膨張係数:次の(
2)式より算出 α:熱膨張係数、ΔL:加熱による試料の見かけの伸び
(xi)、L:室温での試料の長さくms) 、 ’I
+  :室温、Tz:500℃、αSin、:石英ガラ
スの熱膨張係数また、これとは別に同じ方法で厚さ0.
3〜0.4鶴のグリーンシートを作成する一方、粒径5
μm以下のAgまたはAg−Pdの導電材料粉末と有機
質ビヒクルとを重量比80:20の割合で混合して導電
性ペーストを調整して、前述のグリーンシートの表面に
各導電性ペーストを全面に印刷し、これを3枚積層して
熱圧着し、空気中850〜1000℃で焼成した。なお
、有機質ビヒクルは、エチルセルロースをα−テレピネ
オールで10倍に希釈したものを使用した。
Dielectric constant: IMHz condition Dielectric loss: IMHz condition ratio Resistance: Direct current 100V condition bending strength: Calculated from the following equation (1) Tr: bending strength, P: load when the sample is broken ( kg
), Il, distance between supporting points (am), b: width of sample (cm), d: thickness of sample (cm) coefficient of thermal expansion: the following (
2) Calculated from the formula α: Coefficient of thermal expansion, ΔL: Apparent elongation of the sample due to heating (xi), L: Length of the sample at room temperature (ms), 'I
+: room temperature, Tz: 500°C, αSin: coefficient of thermal expansion of quartz glass.
While creating a green sheet with a grain size of 3 to 0.4, the grain size is 5.
A conductive paste is prepared by mixing Ag or Ag-Pd conductive material powder of µm or less and an organic vehicle at a weight ratio of 80:20, and each conductive paste is applied to the entire surface of the green sheet. Three sheets were printed, laminated, thermocompressed, and fired in air at 850 to 1000°C. The organic vehicle used was ethyl cellulose diluted 10 times with α-terpineol.

こうして得られた多層磁器基板について、磁器とAgま
たはAg−Pdとの反応を分析したところ、両者間での
反応は見られず、AgおよびAg−Pdはいずれも良好
な導電性を示し、Agの面積抵抗は2mΩ/口で、Ag
−Pdの面積抵抗は20mΩ/口であった。
When the reaction between the porcelain and Ag or Ag-Pd was analyzed for the thus obtained multilayer ceramic substrate, no reaction was observed between the two, and both Ag and Ag-Pd showed good conductivity. The area resistance of Ag
-Pd had a sheet resistance of 20 mΩ/mouth.

(実施例■) 実施例fで作成した厚さl1mのグリーンシートを用い
、縦30鴎、横10難の角柱状にカットしたグリーンシ
ートを、600℃に加熱してバインダを予備燃焼させた
後、900℃で完全燃焼させ、次いで水蒸気(70℃)
中に通過させた窒素をキャリヤガスとする窒素−水蒸気
の還元性もしくは非酸化性雰囲気中、950〜1000
℃で1時間焼成して試料とした。また、実施例Iと同様
にして、加圧成形した角柱状の試料についても、上述と
同じ焼成を行い、熱膨張係数測定用の試料とした。そし
て、これらの試料を用いて、実施例■中で測定した各特
性について測定し、別表2の結果を得た。
(Example ■) Using the green sheet with a thickness of 11 m prepared in Example f, the green sheet was cut into a prismatic shape with a length of 30 mm and a width of 10 mm, and was heated to 600°C to preliminarily burn the binder. , complete combustion at 900℃, then steam (70℃)
950-1000 in a reducing or non-oxidizing atmosphere of nitrogen-steam with nitrogen passed through as a carrier gas.
The sample was baked at ℃ for 1 hour. Further, in the same manner as in Example I, a pressure-molded prismatic sample was also fired in the same manner as described above, and was used as a sample for measuring the coefficient of thermal expansion. Using these samples, each of the properties measured in Example 2 was measured, and the results shown in Attached Table 2 were obtained.

また、実施例■の後半で述べた厚さ0.3〜0.4fl
のグリーンシートを用い、その表面上に粒径50μm以
下の銅粉末と有機質ビヒクルとを重量比80:20の割
合で混合した銅ペーストを印刷し、これを3枚積層して
熱圧着し、窒素−水蒸気の還元性もしくは非酸化性雰囲
気中950〜1000℃で1時間焼成した。こうして得
た多層磁器基板のCu導体は酸化されておらず、良好な
導電性を示し、その面積抵抗は2mΩ/口であった。
In addition, the thickness 0.3 to 0.4 fl described in the latter half of Example
A copper paste made by mixing copper powder with a particle size of 50 μm or less and an organic vehicle at a weight ratio of 80:20 is printed on the surface of the green sheet, and three sheets of this are stacked and bonded by thermocompression. - Calcined at 950-1000°C for 1 hour in a reducing or non-oxidizing atmosphere of water vapor. The Cu conductor of the multilayer ceramic substrate thus obtained was not oxidized and exhibited good conductivity, and its sheet resistance was 2 mΩ/hole.

別表1および別表2の結果は次の基準に従って判定され
た。
The results in Attached Tables 1 and 2 were judged according to the following criteria.

焼結温度: 1000℃以下(Cu導体およびAg−P
d導体の使用可能な温度、ただしAg−Pd導体はAg
:Pd=80:20のもの)誘電率:IMHzの条件下
でlO以下(アルミナの誘電率の値以下) 誘電体損失:IMHzの条件下で0.2%以下抗折強度
:1500kg/−以上 熱膨張係数: 8.  Ox 10−’/を以下(アル
ミナの熱膨張係数の値以下) なお、別表1および別表2中で*印を付したものは、こ
の発明の範囲外のものであり、それ以外はこの発明範囲
内のものである。
Sintering temperature: 1000℃ or less (Cu conductor and Ag-P
d Usable temperature of conductor, except for Ag-Pd conductor
:Pd=80:20) Dielectric constant: 1O or less under IMHz conditions (below the dielectric constant of alumina) Dielectric loss: 0.2% or less under IMHz conditions Breaking strength: 1500 kg/- or more Thermal expansion coefficient: 8. Ox 10-'/ is below (below the value of the thermal expansion coefficient of alumina) Those marked with * in Attached Table 1 and Attached Table 2 are outside the scope of this invention, and the others are outside the scope of this invention. It is inside.

この別表1および別表2から明らかなように、この発明
の多層基板用低温焼結磁器組成物における組成を前記箱
面に限定した限定理由は次のとおりである。
As is clear from Attached Tables 1 and 2, the reason for limiting the composition of the low-temperature sintered ceramic composition for multilayer substrates of the present invention to the box surface is as follows.

(1)SiO,が80重量%を超えると、抗折強度が1
500kg/crl未溝になりかつ焼結温度が1000
℃より高くなるので好ましくない(別表1および別表2
の試料番号1参照)。一方、SiO2が25重量%未満
では、誘電率が10より大きくなるので好ましくない(
別表1および別表2の試料番号4参照)。
(1) When SiO exceeds 80% by weight, the bending strength is 1
500kg/crl ungrooved and sintering temperature 1000
℃, which is undesirable (Appended Tables 1 and 2)
(See sample number 1). On the other hand, if SiO2 is less than 25% by weight, the dielectric constant becomes greater than 10, which is not preferable (
(See sample number 4 in Attached Tables 1 and 2).

(2)BaOが70重量%を超えると、誘電率が10よ
り大きくなるので好ましくない(別表1および別表2の
試料番号5参照)。一方、BaOが15重量%未満では
、抗折強度が1500kg/cd未満になり好ましくな
い(別表1および別表2の試料番号12参照)。
(2) If BaO exceeds 70% by weight, the dielectric constant becomes greater than 10, which is undesirable (see Sample No. 5 in Attached Tables 1 and 2). On the other hand, if BaO is less than 15% by weight, the bending strength will be less than 1500 kg/cd, which is not preferable (see sample number 12 in Attached Tables 1 and 2).

(31Aj2,0.が30重重量を超えると、誘電損失
が0.2%より大きくなり好ましくない(別表1および
別表2の試料番号9参照)。一方、Al2O、が1重量
%以下のときは、焼結温度が1000℃より高くなり好
ましくない(別表1および別表2の試料番号7参照)。
(If 31Aj2,0. exceeds 30% by weight, the dielectric loss will become larger than 0.2%, which is undesirable (see Sample No. 9 in Attached Tables 1 and 2). On the other hand, when Al2O is less than 1% by weight, , the sintering temperature becomes higher than 1000°C, which is undesirable (see sample number 7 in Attached Tables 1 and 2).

(4)MgOが15重量%を超えると、焼結温度が10
00℃より高くなり好ましくない(別表1および別表2
の試料番号13参照)。一方、MgOが含有されないと
きは、熱膨張係数が8.0×1(Ib/lより大きくな
り好ましくない(別表1および別表2の試料番号10参
照)。
(4) When MgO exceeds 15% by weight, the sintering temperature is 10% by weight.
It is undesirable to be higher than 00℃ (Appended Tables 1 and 2)
(See sample number 13). On the other hand, when MgO is not contained, the thermal expansion coefficient becomes larger than 8.0×1 (Ib/l), which is not preferable (see sample number 10 in Attached Tables 1 and 2).

(518z C)+が5重量%を超えると、抗折強度が
1500kg/cjより小さくなり好ましくない(別表
1および別表2の試料番号15参照)。一方、B2O3
が1.5重量%未満では、焼結温度が1000°Cより
高°くなるので好ましくない(別表1および別表2の試
料番号18参照)。
If (518z C)+ exceeds 5% by weight, the bending strength becomes less than 1500 kg/cj, which is not preferable (see sample number 15 in Attached Tables 1 and 2). On the other hand, B2O3
If it is less than 1.5% by weight, the sintering temperature will be higher than 1000°C, which is undesirable (see sample number 18 in Attached Tables 1 and 2).

(発明の効果) この発明によれば、高比抵抗かつ低誘電率で誘電体損失
が少なく、しかも熱膨張係数がアルミナよりも小さくな
る、特性的に優れた多層基板を得ることができる。また
、製造過程においても仮焼後の粉砕などの処理がしやす
く、しかも、1000℃以下で焼成でき、酸化性雰囲気
あるいは非酸化性雰囲気中で焼成しても、電気的特性、
物理的特性さらには熱的特性の変化が無く、内部導体と
の反応も見られないので、内部導体材料として、たとえ
ばAg、Ag−PdペーストCuおよびNiなどの卑金
属を使用することができ、多層基板のコストダウンを図
ることができる。
(Effects of the Invention) According to the present invention, it is possible to obtain a multilayer substrate with excellent characteristics, which has high resistivity, low dielectric constant, little dielectric loss, and has a coefficient of thermal expansion smaller than that of alumina. In addition, in the manufacturing process, processing such as pulverization after calcination is easy, and it can be fired at 1000°C or less, and even if fired in an oxidizing or non-oxidizing atmosphere, the electrical properties
Base metals, such as Ag, Ag-Pd paste Cu and Ni, can be used as the inner conductor material, as there is no change in physical or thermal properties and no reaction with the inner conductor. It is possible to reduce the cost of the substrate.

また、熱膨張係数がアルミナ以下であるため、サーマル
ストレスによるクラックが生じにくくなる。
Furthermore, since the coefficient of thermal expansion is less than or equal to alumina, cracks due to thermal stress are less likely to occur.

さらに、導体としてサーメット抵抗材料などを印刷して
、抵抗体をも形成することができる。
Furthermore, a resistor can also be formed by printing a cermet resistor material or the like as a conductor.

Claims (1)

【特許請求の範囲】 Si成分がSiO_2に換算して25〜80重量%、 Ba成分がBaOに換算して15〜70重量%、B成分
がB_2O_3に換算して1.5〜5重量%、Al成分
がAl_2O_3に換算して1〜30重量%、 Mg成分がMgOに換算して0重量%を超え15重量%
以下含まれる、多層基板用低温焼結磁器組成物。
[Claims] The Si component is 25 to 80% by weight in terms of SiO_2, the Ba component is 15 to 70% by weight in terms of BaO, the B component is 1.5 to 5% by weight in terms of B_2O_3, The Al component is 1 to 30% by weight in terms of Al_2O_3, and the Mg component is more than 0% by weight and 15% by weight in terms of MgO.
A low-temperature sintered ceramic composition for a multilayer substrate, which is included below.
JP61027030A 1986-02-10 1986-02-10 Low temperature sintered porcelain composition for multilayer substrate Expired - Lifetime JPH0676254B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61027030A JPH0676254B2 (en) 1986-02-10 1986-02-10 Low temperature sintered porcelain composition for multilayer substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61027030A JPH0676254B2 (en) 1986-02-10 1986-02-10 Low temperature sintered porcelain composition for multilayer substrate

Publications (2)

Publication Number Publication Date
JPS62187160A true JPS62187160A (en) 1987-08-15
JPH0676254B2 JPH0676254B2 (en) 1994-09-28

Family

ID=12209673

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61027030A Expired - Lifetime JPH0676254B2 (en) 1986-02-10 1986-02-10 Low temperature sintered porcelain composition for multilayer substrate

Country Status (1)

Country Link
JP (1) JPH0676254B2 (en)

Also Published As

Publication number Publication date
JPH0676254B2 (en) 1994-09-28

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