JPS62256738A - Production of quartz glass - Google Patents
Production of quartz glassInfo
- Publication number
- JPS62256738A JPS62256738A JP9734486A JP9734486A JPS62256738A JP S62256738 A JPS62256738 A JP S62256738A JP 9734486 A JP9734486 A JP 9734486A JP 9734486 A JP9734486 A JP 9734486A JP S62256738 A JPS62256738 A JP S62256738A
- Authority
- JP
- Japan
- Prior art keywords
- quartz glass
- gel
- transmittance
- sol
- impurities
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 68
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000012535 impurity Substances 0.000 claims abstract description 13
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 11
- 239000002994 raw material Substances 0.000 claims abstract description 7
- 238000003980 solgel method Methods 0.000 claims abstract description 5
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 5
- 239000010936 titanium Substances 0.000 claims description 10
- 239000011521 glass Substances 0.000 claims description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- -1 alkyl silicate Chemical compound 0.000 claims description 3
- 150000003609 titanium compounds Chemical class 0.000 claims description 2
- 238000002834 transmittance Methods 0.000 abstract description 19
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 abstract description 14
- 239000000758 substrate Substances 0.000 abstract description 12
- 238000000034 method Methods 0.000 abstract description 9
- 238000001035 drying Methods 0.000 abstract description 6
- 239000000499 gel Substances 0.000 abstract description 4
- 239000000203 mixture Substances 0.000 abstract description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 2
- 239000011240 wet gel Substances 0.000 abstract description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 abstract 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 abstract 2
- 229910021529 ammonia Inorganic materials 0.000 abstract 1
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 238000003756 stirring Methods 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 10
- 238000010521 absorption reaction Methods 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- 229910002012 Aerosil® Inorganic materials 0.000 description 3
- 229910002014 Aerosil® 130 Inorganic materials 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000001879 gelation Methods 0.000 description 2
- 238000000746 purification Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012456 homogeneous solution Substances 0.000 description 1
- 235000021110 pickles Nutrition 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B19/00—Other methods of shaping glass
- C03B19/12—Other methods of shaping glass by liquid-phase reaction processes
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C1/00—Ingredients generally applicable to manufacture of glasses, glazes, or vitreous enamels
- C03C1/006—Ingredients generally applicable to manufacture of glasses, glazes, or vitreous enamels to produce glass through wet route
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Glass Melting And Manufacturing (AREA)
- Glass Compositions (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はＩＣフォトマスク基板である石英ガラス基板の
純度に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to the purity of a quartz glass substrate that is an IC photomask substrate.
従来のＩＣフォトマスクガラス基板は、無アルカリガラ
スや石英ガラスであった。ところで、半導体産業は最近
高密度化が進み４Ｍ−ＤＲＡＭも試作されるようになつ
九。このように高密度化が進むと、７オトリンに使用す
る光源として紫外光のような短波長の光が必要になる。Conventional IC photomask glass substrates have been made of alkali-free glass or quartz glass. By the way, the semiconductor industry has recently become more densely packed, and 4M-DRAMs have also been prototyped. As the density increases in this way, short wavelength light such as ultraviolet light becomes necessary as a light source for use in 7-otoline.
無アルカリガラスは紫外光の透過率が低いために使用で
きず、今では紫外光の透過率の高い石英ガラスが主流を
占めるようになっている。上のような理由から、石英ガ
ラスのＩＣフォトマスク基板の紫外光の透過率は、２０
０ｔ＋ｍの光で９０−以上（基板の厚み２−５．）が求
められている。Alkali-free glass cannot be used because it has a low transmittance for ultraviolet light, and quartz glass, which has a high transmittance for ultraviolet light, is now the mainstream. For the above reasons, the ultraviolet light transmittance of a quartz glass IC photomask substrate is 20
A value of 90- or more (substrate thickness 2-5.) is required for light at 0t+m.
しかし、前述の石英ガラスは檀々の不純物を含んでいる
ため、天然石英ガラスは、２００ｎｍの紫外光の透過率
はほぼ８０％程度で、９０％を越えるものは製造上困難
なために製造コヌトが渇くつきほとんど使用されていな
い。また、合成石英ガラスは高純度であるため２００ｎ
ｍの透過率はほとんど９０％を越えている。しかし、原
料の精製や製造工程を高度にコントロールする必要があ
るため製造コストが高く、天然石英より高コストになる
という問題点を有する。However, since the aforementioned quartz glass contains various impurities, the transmittance of natural quartz glass for 200 nm ultraviolet light is approximately 80%, and it is difficult to manufacture products with a transmittance of more than 90%. It is rarely used because it is dry. In addition, synthetic quartz glass has a high purity of 200nm.
The transmittance of m is almost over 90%. However, since it is necessary to highly control the refining of raw materials and the manufacturing process, the manufacturing cost is high, resulting in a problem that the cost is higher than natural quartz.
そこで本発明はこのような問題点を解決するもので、そ
の目的とするところは、ゾル−ゲル法で安価に紫外光２
００ｎｍの透過率の高い（９０％以上）石英ガラスを提
供することにある。The present invention is intended to solve these problems, and its purpose is to inexpensively produce ultraviolet light 2 using the sol-gel method.
An object of the present invention is to provide quartz glass having a high transmittance (90% or more) at 00 nm.
本発明の石英ガラスは、ガラス中の不純物であるチタン
、あるいはチタン化合物の量が（ＬＯ５ｐｐｍ以下であ
ることを特徴とする。またチタン不純物量をコントロー
ルし易いアルキルシリケートと高純度（、Ｔ Ｉ量（Ｌ
Ｏ５ｐ ｐｍ以下）の超微粉末シリカを原料とするゾル
−ゲル法により得られる石英ガラスであることを特徴と
する。The quartz glass of the present invention is characterized in that the amount of titanium or titanium compounds, which are impurities in the glass, is (LO5 ppm or less).It is also characterized by having alkyl silicate and high purity (TI amount), which makes it easy to control the amount of titanium impurities. (L
It is characterized in that it is a quartz glass obtained by a sol-gel method using ultrafine powdered silica of 05 ppm or less) as a raw material.
波長２００ｎｍ程度の紫外光の吸収については、石英ガ
ラス成分である８１−ではほとんど吸収はないと考えら
れ、主に吸収に起因するのはＴ１化合物としての不純物
である。その他の不純物では、少しの吸収はあるかもし
れないがｐｐｍオーダーの存在量では透過率を大きく下
げるようなことはない。Regarding the absorption of ultraviolet light with a wavelength of about 200 nm, it is thought that there is almost no absorption in 81-, which is a silica glass component, and the absorption is mainly caused by impurities as a T1 compound. Other impurities may have some absorption, but their presence on the order of ppm will not significantly reduce the transmittance.
従って、不純物中のＴＩ元木のみ注意して除くことがで
きれば、他の不純物がｐｐｍオーダーで存在しても２０
０ｎｒｎの光透過率を９０％以上にすることはできる。Therefore, if only the TI source tree among impurities can be carefully removed, even if other impurities exist in ppm order, 20%
It is possible to increase the light transmittance of 0nrn to 90% or more.
つまシ製造時の原料精製は極端に高純度にする必要はな
く、ＴＩのみに注意して精製すれば良いので精製工程は
従来よシ簡略化でき製造コストを下げることができる。It is not necessary to purify the raw materials at the time of producing the pickles to an extremely high degree of purity, and it is only necessary to refine the raw materials by paying attention to TI, so that the purification process can be simplified compared to the conventional method, and the production cost can be lowered.
また超微粉末シリカについてもＴｉ量のみに注意を払い
精製すればよい。Further, ultrafine powdered silica may be purified by paying attention only to the amount of Ti.
ところで、２００ｎｍで９０％以上（ガラスの厚さ２．
５ ｍ ）の透過率を達成するのに必要なＴＩの不純物
量は、我々の実験、分析測定によるとほぼ１１０５ｐｐ
以下であることがわかった。つまシガラス原料の精製に
おいては、ＴＩ不不純重重合計００５ｐｐｍ以下にすれ
ばよい。By the way, 90% or more at 200 nm (glass thickness 2.
According to our experimental and analytical measurements, the amount of impurities in TI required to achieve a transmittance of 5 m) is approximately 1105 pp.
It was found that the following. In the purification of the raw material for crushed glass, the total weight of TI impurities may be reduced to 005 ppm or less.
〔実施例１〕
市販のエチルシリケート、市販の超微粉末シリカとして
レオロシールＱＳ−１０２（徳山ソーダ製）をＩＣＰ（
Ｉｎｄｕｃｔｉｖｅｔｙ Ｃｏｕｐｔ＠ｄ Ｐｔａａｍ
ａ）によシ純度分析を行なうと、Ｔｉ量はそれぞれαＯ
２ｐｐｍ。[Example 1] Commercially available ethyl silicate and commercially available ultrafine powdered silica, Rheolosil QS-102 (manufactured by Tokuyama Soda), were subjected to ICP (
Inductivity Coupt@d Ptaam
When the purity analysis is performed according to a), the amount of Ti is αO
2ppm.
αＯ１ｐｐｍであった。αO was 1 ppm.
上述のエチルシリケート５．４ｔと６．９１の純水に塩
＠６．９−を加えた水溶液を激しく攪拌し、無色透明の
均一溶液を得た。そこにレオロシールＱＳ−１０２，１
，８６Ｋｆを徐々ニ添加Ｌ、充分１ｃ 攪拌した。An aqueous solution of 5.4 t of the above-mentioned ethyl silicate and 6.91 grams of pure water to which salt@6.9- was added was vigorously stirred to obtain a colorless and transparent homogeneous solution. There Rheoloseal QS-102,1
, 86 Kf was gradually added to the mixture, and the mixture was stirred thoroughly for 1 c.
さらにこのゾル溶液に超音波を３時間照射して超微粉末
シリカの分散を確実なものとした。該ゾル溶液に１５０
０Ｇの遠心力を１５分間かけ、ゾル溶液中のダマ状物を
取シ除いて均質度の高いゾル溶液を得た。Further, this sol solution was irradiated with ultrasonic waves for 3 hours to ensure the dispersion of the ultrafine powdered silica. 150 to the sol solution
A centrifugal force of 0 G was applied for 15 minutes to remove lumps in the sol solution to obtain a highly homogeneous sol solution.
該ゾル溶液なＣＬ１規定のアンモニア水でＰＨ４，３に
調整してから、ポリプロピレン製容器（幅３０αＸ ３
０ ｅｓ Ｘ高さ１０画）に７５０艷の量を仕込みフタ
をして静置ゲル化させた。５日間、３０℃の恒温室内で
熟成させた。After adjusting the pH of the sol solution to 4.3 with ammonia water specified by CL1, transfer it to a polypropylene container (width 30α
0 es x height 10 strokes) was prepared in an amount of 750 ml, covered with a lid, and left to gel. It was aged for 5 days in a thermostatic chamber at 30°C.
熟成したウェットゲルに開孔率（Ｌ５％のフタをして５
６℃の乾燥室内で乾燥させた。The aged wet gel was covered with a lid with a porosity of 5% (L5%).
It was dried in a drying room at 6°C.
該ドライゲルを適当な条件で焼結し石英ガラスとした後
、１７８０℃で１０分間高温処理した。The dry gel was sintered to form quartz glass under appropriate conditions, and then subjected to high temperature treatment at 1780° C. for 10 minutes.
得られた石英ガラスを５インチ角Ｘ（１０９インチ厚の
大きさに研磨し、２００ｎｍの光透過率を測定すると９
０％であった。これはＩＣ用フォトマスク基板として十
分使用できるものであった。The obtained quartz glass was polished to a size of 5 inches square (109 inches thick) and the light transmittance at 200 nm was measured to be 9.
It was 0%. This could be fully used as a photomask substrate for IC.
石英ガラスの純度分析を行うと、Ｔｉ量は［１１０３ｐ
ｐであった。When the purity of quartz glass is analyzed, the amount of Ti is [1103p
It was p.
〔実施例２〕
市販のエチルシリケート、市販の超微粉末シリカとして
キャボシルＬ−９０（キャボット社製）をＩＣＰによシ
純度分析を行なうと、Ｔｉｎはともにα０１ｐｐＩ！Ｉ
であった。[Example 2] Commercially available ethyl silicate and commercially available ultrafine powdered silica CABOSIL L-90 (manufactured by Cabot Corporation) were analyzed for purity by ICP, and both Tin values were α01ppI! I
Met.
上記のエチルシリケートとキャボシルＬ−９０を使って
実施例１と全く同じ方法でゾル溶液を調製し、ゲル化工
程、乾燥工程、焼結工程を経て石英ガラスを得た。A sol solution was prepared using the above ethyl silicate and Cabosil L-90 in exactly the same manner as in Example 1, and quartz glass was obtained through a gelling process, a drying process, and a sintering process.
該石英ガラスを５インチ角Ｘα０９インチ厚の大きさに
研磨し、２００ｎｍの光透過率な測定すると９０％であ
った。これはＩＣ用フォトマスク基板として十分使用で
きるものであった。The quartz glass was polished to a size of 5 inches square x α09 inches thick, and the light transmittance at 200 nm was measured to be 90%. This could be fully used as a photomask substrate for IC.
石英ガラスの純度分析を行うと、Ｔｌ−１ｔはα０２ｐ
ｐｃｎであった。When quartz glass is analyzed for purity, Tl-1t is α02p.
It was pcn.
〔実施例３〕
市販のエチルシリケート、市販の超微粉末７リカとして
アエロジル１３０（日本アエロジル社製）をＩＣＰによ
υ純度分析を行なうと、Ｔｉ量はそれぞれ１１０１ｐｐ
、αＯ４ｐｐｍであった。[Example 3] Commercially available ethyl silicate and Aerosil 130 (manufactured by Nippon Aerosil Co., Ltd.) as a commercially available ultrafine powder were analyzed for purity by ICP, and the amount of Ti was 1101pp for each.
, αO was 4 ppm.
上記のエチルシリケートとアエロジル１３０を使って実
施例１と全く同じ方法でゾル溶液を調製し、ゲル化工程
、乾燥工程、焼結工程を経て石英ガラスを得た。A sol solution was prepared using the above ethyl silicate and Aerosil 130 in exactly the same manner as in Example 1, and quartz glass was obtained through a gelling process, a drying process, and a sintering process.
該石英ガラスを５インチ角×１０９インチ厚の大きさに
研磨し、２００ｎｍの光透過率を測定すると８９％であ
った。これはＩＣ用フォトマスク基板として使用できる
ものであった。The quartz glass was polished to a size of 5 inches square x 109 inches thick, and the light transmittance at 200 nm was measured to be 89%. This could be used as a photomask substrate for IC.
石英ガラスの純度分析を行うと、Ｔｊｆはα０５ｐｐｎ
ｉであった。When the purity of quartz glass is analyzed, Tjf is α05ppn
It was i.
〔比較例１〕
市販のエチルシリケート、市販の超微粉末シリカとじて
アエロジルｏｘ−ｓｏ（デグサ社製）をＩＣＰＫよシ純
度分析を行なうと、Ｔｉ量はそれぞれｒＪ、０１ｐｐｒ
ｎ、 １ｐＰｒｎであった。[Comparative Example 1] Purity analysis of commercially available ethyl silicate and commercially available ultrafine powdered silica Aerosil ox-so (manufactured by Degussa) by ICPK revealed that the amount of Ti was rJ and 01ppr, respectively.
n, 1pPrn.
上記のエチルシリケートとアエロジルｏｘ−ｓ。The above ethyl silicate and Aerosil ox-s.
を°使って実施例１と全く同じ方法でゾル溶液を調製し
、ゲル化工程、乾燥工程、焼結工程を経て石英ガラスを
得た。A sol solution was prepared in exactly the same manner as in Example 1 using .
該石英ガラスを５インチ角×００９インチ厚の大きさに
研磨し、２００ｎｍの光透過率を測定すると６５チであ
った。これはＩＣ用フォトマスク基板には使えないもの
であった。The quartz glass was polished to a size of 5 inches square x 0.9 inches thick, and the light transmittance at 200 nm was measured to be 65 inches. This could not be used as a photomask substrate for IC.
石英ガラスの純度分析を行うと、Ｔｌｆｉは１ｐｐＩ！
Ｉであった。When we analyze the purity of quartz glass, Tlfi is 1 ppI!
It was I.
〔比較例２〕
市販のエチルシリケート、市販の超微粉末シリカとして
キャボシルＬ−９０（キャボット社製）をｒｃｐによシ
純度分析を行なうと、Ｔｉ量はそれぞれα”Ｐｐｍ＋０
０１ｐｐｍであった。[Comparative Example 2] Commercially available ethyl silicate and commercially available ultrafine powdered silica CABOSIL L-90 (manufactured by Cabot) were analyzed for purity by RCP, and the Ti content was α”Ppm+0, respectively.
It was 01 ppm.
上記のエチルシリケートとキャボシルＬ−９０を使って
実施例１と全く同じ方法でゾル溶液な調製し、ゲル化工
程、乾燥工程、焼結工程を経て石英ガラスを得た。A sol solution was prepared using the above ethyl silicate and CABOSIL L-90 in exactly the same manner as in Example 1, and quartz glass was obtained through a gelation process, a drying process, and a sintering process.
該石英ガラスを５身ンチ角ｘｌＯ９インチ厚の大きさに
研磨し、２００ｎｍの光透過率を測定すると８０％であ
った。これはＩＣ用フォトマスク基板にはやや使いにく
いものであつ九。The quartz glass was polished to a size of 5 inches square x 9 inches thick, and the light transmittance at 200 nm was measured to be 80%. This is somewhat difficult to use for IC photomask substrates.
石英ガラスの純度分析を行うと、Ｔｉｊｌｌは［Ｌ０８
ＰＰｒｎであつ九。When analyzing the purity of quartz glass, Tijll found [L08
Atsuku in PPrn.
〔実施例４〕
市販の試薬用テトラエチルオルソシリケート、市販の超
微粉末シリカとしてレオロシールＱＳ−１０２（徳山ソ
ーダＲ）をＩＣＰによシ純度分析を行うと、Ｔｌ量はそ
れぞれ０ｐｐｒｎ、１ｌ１０１ｐｐであった。[Example 4] Purity analysis of commercially available reagent grade tetraethyl orthosilicate and commercially available ultrafine powdered silica Rheolosil QS-102 (Tokuyama Soda R) was performed by ICP, and the amounts of Tl were 0 pprn and 1 l 101 pp, respectively. .
上記のテトラエチルオルソシリケートとレオロシールＱ
Ｓ−１０２を使って実施例と全く同じ方法でゾル溶液を
調製し、ゲル化工程、乾燥工程、焼結工程乞経て石英ガ
ラスを得た。The above tetraethyl orthosilicate and Rheolosil Q
A sol solution was prepared using S-102 in exactly the same manner as in the example, and quartz glass was obtained through a gelation process, a drying process, and a sintering process.
該石英ガラスを５インチ角×００９インチ厚の大きさに
研磨し、２００ｎ＋ｎの光透過率を測定すると９１％で
あった。これはＩＣ用フォトマスク基板として十分使用
できるものであった。The quartz glass was polished to a size of 5 inches square x 009 inches thick, and the light transmittance of 200n+n was measured to be 91%. This could be fully used as a photomask substrate for IC.
石英ガラスの純度分析を行うと、Ｔｉ量はα０１ｐｐｅ
ａであった。本製造方法では高純度の試薬用テトラエチ
ルオルソシリケートを使つ九ためコスト面では非常に高
くつい九。When the purity of quartz glass was analyzed, the amount of Ti was α01ppe.
It was a. This production method uses highly purified reagent-grade tetraethyl orthosilicate, which is extremely costly.
以上述べたように本発明によれば、石英ガラス中のＴＩ
不純物を（ＬＯ５ｐｐｍ以下にすることによシ、２００
ｎｍの光透過率を９０％以上（厚み２−３■）にするこ
とができ、ゾル−ゲル法で安価にｒｃ用フォトマスク石
英憂板を提供することができる。As described above, according to the present invention, TI in quartz glass
By reducing impurities to (LO5ppm or less),
It is possible to increase the light transmittance of 90% or more (thickness: 2-3 cm), and it is possible to provide a quartz plate for photomasks for RC at low cost using the sol-gel method.
以上that's all
Claims (2)
化合物の量が０．０５ｐｐｍ以下であることを特徴とす
る石英ガラスの製造方法。(1) A method for producing quartz glass, characterized in that the amount of titanium or a titanium compound as an impurity in the glass is 0.05 ppm or less.
トと超微粉末シリカを原料とするゾル−ゲル法により得
られる石英ガラスであることを特徴とする特許請求の範
囲第１項記載の石英ガラスの製造方法。(2) The method for producing quartz glass according to claim 1, wherein the quartz glass is obtained by a sol-gel method using at least an alkyl silicate and ultrafine powdered silica as raw materials. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9734486A JPS62256738A (en) | 1986-04-26 | 1986-04-26 | Production of quartz glass |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9734486A JPS62256738A (en) | 1986-04-26 | 1986-04-26 | Production of quartz glass |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62256738A true JPS62256738A (en) | 1987-11-09 |
Family
ID=14189860
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9734486A Pending JPS62256738A (en) | 1986-04-26 | 1986-04-26 | Production of quartz glass |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62256738A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0354123A (en) * | 1989-07-20 | 1991-03-08 | Shin Etsu Chem Co Ltd | Quartz glass for ultraviolet ray and production thereof |
-
1986
- 1986-04-26 JP JP9734486A patent/JPS62256738A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0354123A (en) * | 1989-07-20 | 1991-03-08 | Shin Etsu Chem Co Ltd | Quartz glass for ultraviolet ray and production thereof |
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