JPS62254433A - Formation of oxide film on silicon substrate - Google Patents
Formation of oxide film on silicon substrateInfo
- Publication number
- JPS62254433A JPS62254433A JP9882486A JP9882486A JPS62254433A JP S62254433 A JPS62254433 A JP S62254433A JP 9882486 A JP9882486 A JP 9882486A JP 9882486 A JP9882486 A JP 9882486A JP S62254433 A JPS62254433 A JP S62254433A
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- silicon
- silicon substrate
- layer
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 40
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 39
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 38
- 239000010703 silicon Substances 0.000 title claims abstract description 38
- 230000015572 biosynthetic process Effects 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 33
- 238000000034 method Methods 0.000 claims abstract description 30
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 25
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 17
- 239000010453 quartz Substances 0.000 claims abstract description 9
- 239000007790 solid phase Substances 0.000 claims abstract description 4
- 238000001947 vapour-phase growth Methods 0.000 claims description 8
- 238000004140 cleaning Methods 0.000 claims description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 2
- 229910052786 argon Inorganic materials 0.000 claims description 2
- -1 argon ions Chemical class 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 claims description 2
- 230000001131 transforming effect Effects 0.000 claims description 2
- 230000006866 deterioration Effects 0.000 abstract description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 13
- 239000012535 impurity Substances 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000000348 solid-phase epitaxy Methods 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Formation Of Insulating Films (AREA)
- Chemical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
Abstract
Description
【発明の詳細な説明】
（イ） 産業上の利用分野
本発明は高速化に選するｒａに利用されるシリコン基板
上の酸化膜形成方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION (a) Field of Industrial Application The present invention relates to a method for forming an oxide film on a silicon substrate used in RA for increasing speed.
−１従来の技術
ＩＣの微細化、高速化を推進するために、低温プロセス
の開発が不可欠になってきている。父、最近ではＭＯＳ
デバイスにおいてもエピタキシャル膜が用いられるよう
になってき九が、エピタキシャル成長にシいても不純物
のイードドーピングを抑える為に、低温でのエピタキシ
ャル成長が必要であり、アモルファスシリコンを用いた
固相成長法が研究されている。シリコン基板上にシリコ
ン酸化膜を形成する場合、最も一般的には高温の酸素雰
囲気中でシリコン基板の表面を熱酸化する方法（「日経
マイクロデバイス」１９８５年１０月号９ＩｐＩ５１頁
参照）が、界面特性の良いシリコン酸化膜を形成するた
めに用いられている。例えば５０１１ｍ（ナノメータ）
のシリコン酸化膜な形成するためにＪＬｉ１０００℃の
酸素雰囲気中で１８００秒の酸化が必要である。このよ
うに長時曲、高温中に基板をさらすとシリコン基板中の
不純物が再拡散を起こし、１０の微細化を妨げる結果と
なる。このような理由で、低温で酸化シリコン膜を形成
する方法が必要とされでいる。このように低温で酸化シ
リコンＩｌｌ！を形成する方法としては気相成長法によ
シ酸化シリコン膜を形成する方法があるが、界面特性が
劣り、ＭＯＢデバイスの特にゲート酸化膜として用いる
のは困難であった。-1 Conventional technology In order to promote miniaturization and speeding up of ICs, the development of low-temperature processes has become essential. Father, these days MOS
Epitaxial films have come to be used in devices as well, but in order to suppress the doping of impurities, epitaxial growth is required at low temperatures, and solid-phase growth methods using amorphous silicon are being researched. ing. When forming a silicon oxide film on a silicon substrate, the most common method is to thermally oxidize the surface of the silicon substrate in a high-temperature oxygen atmosphere (see "Nikkei Micro Device", October 1985 issue, 9IpI, p. 51). It is used to form silicon oxide films with good characteristics. For example, 5011m (nanometer)
To form a silicon oxide film, JLi requires oxidation for 1800 seconds in an oxygen atmosphere at 1000°C. If the substrate is exposed to high temperature conditions for a long time in this way, impurities in the silicon substrate will be re-diffused, which will hinder the miniaturization of the silicon substrate. For these reasons, there is a need for a method of forming silicon oxide films at low temperatures. In this way, silicon oxide at low temperatures Ill! There is a method of forming a silicon oxide film using a vapor phase growth method, but it has poor interface properties and is difficult to use, especially as a gate oxide film, in MOB devices.
（ハ）発明が解決しようとする問題点
上述のようにシリコン基板上に熱酸化によりシリコン酸
化膜を形成した場合、高温により不純物の再拡散が起こ
り、ＩＯの微細化の妨げとなるという問題点がある。又
、気相成長法によりシリコン基板表面上に酸化シリコン
膜を形成した場合。(c) Problems to be solved by the invention As mentioned above, when a silicon oxide film is formed on a silicon substrate by thermal oxidation, re-diffusion of impurities occurs due to high temperatures, which hinders the miniaturization of IOs. There is. Also, when a silicon oxide film is formed on the surface of a silicon substrate by vapor phase growth.
界面特性が劣るという問題点がある。There is a problem that the interfacial properties are poor.
本発明は以上の点に留意してなされたものであり、低温
プロセスを用いてシリコン基板内の特性劣化を防ぐと共
に、シリコン基板とシリコン酸化膜の界面の界面特性の
低下を防ぐシリコン基板上の酸化膜形成方法を提供しよ
うとするものである。The present invention has been made with the above points in mind, and uses a low-temperature process to prevent the deterioration of characteristics within a silicon substrate, as well as to prevent deterioration of the interfacial characteristics of the interface between the silicon substrate and silicon oxide film. The present invention attempts to provide a method for forming an oxide film.
に）問題点を解決する念めの手段
本発明は、シリコン基板表面の洗浄をプラズマ励起シた
アルゴンイオンのスパッタリングにヨリ実行する工程と
、洗浄されたシリコン基板上にアモルファスシリコン層
を気相成長法によって形成する工程と、前記アモルファ
スシリコン階上にシリコン酸化腰下を気相成長法によっ
て形成する工程と、前記シリコン酸化腰下の前記アモル
ファスνリプン１１１に固相エビタキＶヤル成長法によ
って上記ｖ Ｉ）コン基板と実質的に同じものに変成す
る工程とを含むことを特徴とするシリコン基板の酸化膜
形成方法である。2) A precautionary measure to solve the problem The present invention involves a process of cleaning the surface of a silicon substrate by sputtering plasma-excited argon ions, and a process of vapor phase growth of an amorphous silicon layer on the cleaned silicon substrate. a step of forming a silicon oxide bottom layer on the amorphous silicon layer by a vapor phase growth method; and a step of forming a silicon oxide layer 111 on the silicon oxide layer layer by a solid phase epitaxy method. I) A method for forming an oxide film on a silicon substrate, which is characterized by including the step of transforming the silicon substrate into a material substantially the same as a silicon substrate.
（ホ）作 用
本発明は上述の如く、シリコ／酸化膜は敞初アモルファ
スＶリコン層の上に成長させ、その後上記アモルファス
Ｖリコン層ｔｖリコン基板と実質的に同じものに変成す
るようにしているので、低温プロセスが可能であり基板
特性の低下を防止することができ、父、シリコ／酸化膜
との間の界面特性の劣化を防止することができる。(E) Function As described above, the present invention is arranged so that the silicon/oxide film is grown on the initial amorphous V-recon layer and then transformed into the amorphous V-recon layer and the TV recon substrate. This makes it possible to perform low-temperature processes and prevent deterioration of the substrate properties, as well as the deterioration of the interfacial properties between silicon and the oxide film.
（へ）実施例
本発明の実施例を図面な参照して説明する。第１図は本
発明方法を実施する装置の概略構成図である。化学的洗
浄を施したシリコン基板（すをサセプタ（２）上に置き
１石英管（３）の中央部に設置する。(F) Embodiments An embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a schematic diagram of an apparatus for carrying out the method of the present invention. A chemically cleaned silicon substrate is placed on a susceptor (2) and placed in the center of a quartz tube (3).
この石英管（３層をキャップ（４１で閉じ、減圧排気装
置（５）で石英管（３）内を１Ｘ１０ ）−ルの真空
状態に設定する。その後、赤外線ランプ（６）によシリ
コン基板（１）を５００℃に加熱する。次に、ガス導入
管（））からＡｒガスを１００００７分導入し１石英管
内Ｖ０．１ ）−ルに保ち、シリコン基板（１）に直流
電＃１（８１によＦ）−５００Ｖのバイアスな与える。This quartz tube (3 layers) is closed with a cap (41), and the inside of the quartz tube (3) is set to a vacuum state of 1×10 μm using a vacuum evacuation device (5). 1) is heated to 500°C.Next, Ar gas is introduced from the gas introduction tube ()) for 100,007 minutes, and the voltage inside the quartz tube is maintained at V0.1). F) Apply a bias of -500V.
高周波電＃（９）とコイル顛とによりＩＳ、５６ＭＨｚ
。IS, 56MHz by high frequency electric # (9) and coil structure
.
５Ｗの高周波を石英管内に与え、ＡＴのプラズマを発生
させる。Ａｒ イオンはシリコン基板（１）のバイア
スによシ該ンリプン基板上に衝突し、該ンリコン基板表
１１ｉ］ｔ−洗浄する（ｍ２図）、この洗浄を５分間実
行した＆、Ａ！”ガスの導入を停止し。A 5W high frequency wave is applied to the quartz tube to generate AT plasma. Ar ions collided onto the silicon substrate due to the bias of the silicon substrate (1), and the silicon substrate was cleaned (Fig. m2), and this cleaning was carried out for 5 minutes &,A! ``Stop introducing gas.
次いでガス導入管ＱｌｌからＢ１Ｈ４ガスＹ １０ ｔ
３ｃ１／分導入し、熱分解によりアモルファスシリコン
をＨｅ＜ １ ｓｔ ＩＩ −ｑ ｙうｅ
＆ ｌ ｌ Ｓ しｙ ＩＨ７、ｍ ｎｌ −
Ｐ 〒ｃ ｍ、＝−ｒスシリコン＃（１３を堆積さ
せる（［１ｌｌＣ）。このアモルファスＶリコ７Ｆ＃ｉ
？Ｉを堆積した後、８１Ｈ４ガスの供給を停止し、基板
温度を、シリコン酸化膜の形成温度４２０℃に設定する
。次いで、ガス導入管（７）からＢＩＥ４ガスを５００
ａａ／分、ガス導入管ｔ１１）から０２ガスを１５０
ｃｏ／分、更にガス導入管αりからＮ２ガスｖ５ ／
／分の割合でそれぞれ石英管（３）内に導入し、気相成
長法によりシリコン酸化膜（１４）をアモルファスシリ
コン層ａ３上に堆積する（第４図）。このシリコン酸化
膜証瘤が１０ｎｍ堆積し一＃、後、上記各ガスの供給を
停止し、その後、シリコン基板（１）の温度を６００〜
９００℃に上げ、アモルファスシリコン層ａ３のアモル
ファスシリコンをシリコ／酸化膜Ｕ＠との界ｉｉｏまで
固相エピタキシャル成長させてシリコン基５ｉｊ（１１
と実質的に同じもの（ＩｓＫ変成する（第５図）。Next, B1H4 gas Y 10 t is supplied from the gas introduction pipe Qll.
3c1/min and converts amorphous silicon by thermal decomposition into He<1 st II -q yue
& l l S y IH7, m nl −
Deposit P 〒c m,=-rs silicon#(13([1llC).This amorphous Vlico7F#i
? After I is deposited, the supply of 81H4 gas is stopped, and the substrate temperature is set to 420° C., the temperature for forming a silicon oxide film. Next, 500 ml of BIE4 gas was supplied from the gas introduction pipe (7).
aa/min, 150 02 gas from gas inlet pipe t11)
co/min, and further N2 gas v5/min from the gas inlet pipe α
/min into the quartz tube (3), and a silicon oxide film (14) is deposited on the amorphous silicon layer a3 by vapor phase growth (FIG. 4). After 10 nm of this silicon oxide film has been deposited, the supply of each of the above gases is stopped, and the temperature of the silicon substrate (1) is then raised to 600~600℃.
The temperature is raised to 900°C, and the amorphous silicon of the amorphous silicon layer a3 is solid-phase epitaxially grown to the silicon/oxide film U@ boundary io to form a silicon group 5ij (11
Substantially the same as (IsK metamorphoses (Fig. 5)).
（ト）発明の効果
以上のようにして得られ光シリコン酸化膜の緒特性を、
従来のシリコン基板を熱酸化して得られるシリコン酸化
膜、及びシリコン基板上に気相成良法により堆積して得
られるシリコン酸化膜と比較すると以下の如くなる。(g) Effects of the invention The characteristics of the photo-silicon oxide film obtained as described above,
A comparison between a silicon oxide film obtained by thermally oxidizing a conventional silicon substrate and a silicon oxide film obtained by depositing on a silicon substrate by a vapor deposition method is as follows.
熱酸化で得られる酸化膜は界面特性が良いが不純物（ポ
ロン）の再拡散長が大きいという欠点がある。−万、気
相成長法で得られる酸化膜は不純物の再拡散長が小さい
が界面特性が劣る。これらに比べて本発明方法によれば
不純物の拡散長を小さく抑えかつ艮好な界面特性が得ら
れる。このように１本発明方法によシ、低温において界
面特性の良いシリコン酸化膜を形成することができ、プ
ロセス温度の実効的な低温化、特にゲート酸化膜のプロ
セスに有用となり、１０の微細化に大きな効果がある。Although the oxide film obtained by thermal oxidation has good interfacial properties, it has the disadvantage that the re-diffusion length of impurities (poron) is long. - The oxide film obtained by vapor phase growth has a small re-diffusion length of impurities, but its interface properties are poor. Compared to these, according to the method of the present invention, the diffusion length of impurities can be kept small and good interface characteristics can be obtained. In this way, the method of the present invention can form a silicon oxide film with good interfacial properties at low temperatures, and is useful for effectively lowering the process temperature, especially for gate oxide film processes, and for miniaturization of 10. has a big effect.
第１図は本発明方法を実施する装置の概略構成図、ｔＪ
１２図〜′ＩＪ１５図は本発明方法の工程説明図である
。
（ｌ）・・・シリコ／基板、（１３・・・アモルファス
シリコン層、 （１４・・・シリコン酸化膜、０９・・
・変成されたシリコン基板。FIG. 1 is a schematic diagram of an apparatus for carrying out the method of the present invention, tJ
Figures 12 to 15 are explanatory diagrams of the steps of the method of the present invention. (l)...Silicon/substrate, (13...Amorphous silicon layer, (14...Silicon oxide film, 09...
- Metamorphosed silicon substrate.
Claims (2)
ゴンイオンのスパッタリングにより実行する工程と、洗
浄されたシリコン基板上にアモルファスシリコン層を気
相成長法によつて形成する工程と、前記アモルファスシ
リコン層上にシリコン酸化膜を気相成長法によつて形成
する工程と、前記シリコン酸化膜下の前記アモルファス
シリコン層を固相エピタキシヤル成長法によつて上記シ
リコン基板と実質的に同じものに変成する工程とを含む
ことを特徴とするシリコン基板上の酸化膜形成方法。(1) A step of cleaning the surface of the silicon substrate by sputtering of plasma-excited argon ions, a step of forming an amorphous silicon layer on the cleaned silicon substrate by vapor phase growth, and a step of forming an amorphous silicon layer on the amorphous silicon layer. a step of forming a silicon oxide film by a vapor phase growth method, and a step of transforming the amorphous silicon layer under the silicon oxide film into something substantially the same as the silicon substrate by a solid phase epitaxial growth method. A method for forming an oxide film on a silicon substrate, the method comprising:
徴とする特許請求の範囲第（１）項記載のシリコン基板
上の酸化膜形成方法。(2) The method for forming an oxide film on a silicon substrate according to claim (1), wherein each of the steps is carried out in one quartz tube.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9882486A JPS62254433A (en) | 1986-04-28 | 1986-04-28 | Formation of oxide film on silicon substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9882486A JPS62254433A (en) | 1986-04-28 | 1986-04-28 | Formation of oxide film on silicon substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62254433A true JPS62254433A (en) | 1987-11-06 |
Family
ID=14230046
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9882486A Pending JPS62254433A (en) | 1986-04-28 | 1986-04-28 | Formation of oxide film on silicon substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62254433A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03120365A (en) * | 1989-09-27 | 1991-05-22 | Internatl Business Mach Corp <Ibm> | Sio2-adhering process |
| KR100242829B1 (en) * | 1997-07-26 | 2000-03-02 | 이장무 | Alumina strengthening method |
| KR100542690B1 (en) * | 1998-12-30 | 2006-03-28 | 주식회사 하이닉스반도체 | Silicon oxide film formation method of semiconductor device |
-
1986
- 1986-04-28 JP JP9882486A patent/JPS62254433A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03120365A (en) * | 1989-09-27 | 1991-05-22 | Internatl Business Mach Corp <Ibm> | Sio2-adhering process |
| KR100242829B1 (en) * | 1997-07-26 | 2000-03-02 | 이장무 | Alumina strengthening method |
| KR100542690B1 (en) * | 1998-12-30 | 2006-03-28 | 주식회사 하이닉스반도체 | Silicon oxide film formation method of semiconductor device |
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