JPS62251745A - Developing solution for positive type photoresist - Google Patents
Developing solution for positive type photoresistInfo
- Publication number
- JPS62251745A JPS62251745A JP9544786A JP9544786A JPS62251745A JP S62251745 A JPS62251745 A JP S62251745A JP 9544786 A JP9544786 A JP 9544786A JP 9544786 A JP9544786 A JP 9544786A JP S62251745 A JPS62251745 A JP S62251745A
- Authority
- JP
- Japan
- Prior art keywords
- developer
- hydroxide
- trialkylalkoxyammonium
- developing solution
- positive type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 10
- 150000001412 amines Chemical class 0.000 claims abstract description 11
- 150000002334 glycols Chemical class 0.000 claims abstract description 7
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 claims abstract description 6
- 125000004432 carbon atom Chemical group C* 0.000 claims description 4
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims 1
- 239000007864 aqueous solution Substances 0.000 abstract description 8
- 239000000243 solution Substances 0.000 abstract description 5
- 238000000034 method Methods 0.000 description 8
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 description 6
- 239000000908 ammonium hydroxide Substances 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 4
- OEYIOHPDSNJKLS-UHFFFAOYSA-N choline Chemical compound C[N+](C)(C)CCO OEYIOHPDSNJKLS-UHFFFAOYSA-N 0.000 description 4
- 229960001231 choline Drugs 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 3
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- NQRYJNQNLNOLGT-UHFFFAOYSA-N Piperidine Chemical compound C1CCNCC1 NQRYJNQNLNOLGT-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- WGQKYBSKWIADBV-UHFFFAOYSA-N benzylamine Chemical compound NCC1=CC=CC=C1 WGQKYBSKWIADBV-UHFFFAOYSA-N 0.000 description 2
- YPFDHNVEDLHUCE-UHFFFAOYSA-N propane-1,3-diol Chemical compound OCCCO YPFDHNVEDLHUCE-UHFFFAOYSA-N 0.000 description 2
- 238000004080 punching Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- 125000005270 trialkylamine group Chemical group 0.000 description 2
- XFNJVJPLKCPIBV-UHFFFAOYSA-N trimethylenediamine Chemical compound NCCCN XFNJVJPLKCPIBV-UHFFFAOYSA-N 0.000 description 2
- KETQAJRQOHHATG-UHFFFAOYSA-N 1,2-naphthoquinone Chemical compound C1=CC=C2C(=O)C(=O)C=CC2=C1 KETQAJRQOHHATG-UHFFFAOYSA-N 0.000 description 1
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 1
- NNWUEBIEOFQMSS-UHFFFAOYSA-N 2-Methylpiperidine Chemical compound CC1CCCCN1 NNWUEBIEOFQMSS-UHFFFAOYSA-N 0.000 description 1
- BFSVOASYOCHEOV-UHFFFAOYSA-N 2-diethylaminoethanol Chemical compound CCN(CC)CCO BFSVOASYOCHEOV-UHFFFAOYSA-N 0.000 description 1
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 1
- FAXDZWQIWUSWJH-UHFFFAOYSA-N 3-methoxypropan-1-amine Chemical compound COCCCN FAXDZWQIWUSWJH-UHFFFAOYSA-N 0.000 description 1
- UEEJHVSXFDXPFK-UHFFFAOYSA-N N-dimethylaminoethanol Chemical compound CN(C)CCO UEEJHVSXFDXPFK-UHFFFAOYSA-N 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- WUGQZFFCHPXWKQ-UHFFFAOYSA-N Propanolamine Chemical compound NCCCO WUGQZFFCHPXWKQ-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229960002887 deanol Drugs 0.000 description 1
- FHIVAFMUCKRCQO-UHFFFAOYSA-N diazinon Chemical compound CCOP(=S)(OCC)OC1=CC(C)=NC(C(C)C)=N1 FHIVAFMUCKRCQO-UHFFFAOYSA-N 0.000 description 1
- 239000012972 dimethylethanolamine Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- 239000011440 grout Substances 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- DMQSHEKGGUOYJS-UHFFFAOYSA-N n,n,n',n'-tetramethylpropane-1,3-diamine Chemical compound CN(C)CCCN(C)C DMQSHEKGGUOYJS-UHFFFAOYSA-N 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 239000003504 photosensitizing agent Substances 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- OVSQVDMCBVZWGM-QSOFNFLRSA-N quercetin 3-O-beta-D-glucopyranoside Chemical compound O[C@@H]1[C@@H](O)[C@H](O)[C@@H](CO)O[C@H]1OC1=C(C=2C=C(O)C(O)=CC=2)OC2=CC(O)=CC(O)=C2C1=O OVSQVDMCBVZWGM-QSOFNFLRSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 150000005846 sugar alcohols Polymers 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical compound C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 description 1
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 1
- IJGSGCGKAAXRSC-UHFFFAOYSA-M tris(2-hydroxyethyl)-methylazanium;hydroxide Chemical compound [OH-].OCC[N+](C)(CCO)CCO IJGSGCGKAAXRSC-UHFFFAOYSA-M 0.000 description 1
- 230000002747 voluntary effect Effects 0.000 description 1
- 239000000080 wetting agent Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
- G03C5/00—Photographic processes or agents therefor; Regeneration of such processing agents
- G03C5/18—Diazo-type processes, e.g. thermal development, or agents therefor
Abstract
Description
【発明の詳細な説明】
〈産業上の利用分野〉
本発明は、特に膜残り（以下スカムという）等の改良さ
れたポジ型フォトレジスト用現像液に関する。DETAILED DESCRIPTION OF THE INVENTION <Industrial Application Field> The present invention particularly relates to a developing solution for positive photoresists with improved film residue (hereinafter referred to as scum).
〈従来の技術〉
ポジ型フォトレジスト用現像液としては有機アミン系と
してはテトラメチルアンモニウムヒドシド（ＴＭＡＨ）
の水溶液またはコリン水溶液が用いられており、特に半
導体製造時に使用されている。又、プロセス許容性を改
良した現像液としてはメチルトリエタノールアンモニウ
ムヒドロキアド水溶液を用いる方法が知られている（特
開昭５４−７４４３２号公報）。更にコリンの安定性を
改良した現像液としてジアルコキシγルキルアンモニウ
ムヒドロキシド水溶液を用いる方法も知られている（特
開昭５２−１４３０１９号公報）。<Prior art> Tetramethylammonium hydroside (TMAH) is an organic amine developer used as a positive photoresist developer.
or choline aqueous solution is used, especially during semiconductor manufacturing. Furthermore, as a developing solution with improved process tolerance, a method using an aqueous solution of methyltriethanolammonium hydroxide is known (Japanese Patent Application Laid-open No. 74432/1983). Furthermore, a method using an aqueous solution of dialkoxy γ-alkyl ammonium hydroxide as a developer with improved stability of choline is also known (Japanese Patent Laid-Open No. 143019/1983).
ところで、超ＬＳＩの様な微細なレジストパターンを形
成する場合に、従来の方法では露光部に現像液によって
本来除去されるべきレジストが除去されずに残ってしま
う現象、いわゆる「スカム」が発生するという好ましく
ない問題が生ずる。By the way, when forming fine resist patterns such as those for VLSI, conventional methods cause a phenomenon in which the resist that should originally be removed by the developer remains in the exposed area without being removed, so-called "scum". An undesirable problem arises.
また、超ＬＳＩには例えばゲート工程の様に厳しい寸法
制御性を必要とする工程があり、レジストパターン寸法
の正確性、再現性が重要となる。すなわち、超ＬＳＩで
は縮小投影露光装置（ステッパー）の使用が一般化して
おり、この縮小投影露光法では定在波の影響があり、寸
法精度が低下するために、寸法制御性を改良することで
ＬＳＩの構成素子間の特性ばらつきを減少でき、ＬＳＩ
の性能向上とコスト低減につながる。Furthermore, VLSI includes processes that require strict dimensional control, such as gate processes, and accuracy and reproducibility of resist pattern dimensions are important. In other words, the use of reduction projection exposure equipment (steppers) has become commonplace in VLSIs, and this reduction projection exposure method is affected by standing waves, reducing dimensional accuracy. Characteristic variations between LSI components can be reduced, and LSI
This leads to improved performance and reduced costs.
く問題点を解決するための手段〉
本発明は、一般式（Ｉ）
Ｒ’Ｒ’
＋ １ （Ｉ）（ＲｓＮ（ＣＨ
ＣＨＯ）ｎｌ（］ ” ＯＨ−（但し、ｎ＝２〜７、
Ｒは炭素数１〜４のアルキル基、Ｒ１及びＲ２はそれぞ
れ独立に水素原子又は炭素数１〜４のアルキル基を表わ
す。）
で示されるトリアルキルアルコキシアンモニウムヒドロ
キシドを必須成分として含有することを特徴とするポジ
型フォトレジスト用水性現像液である。また、必要によ
ってはこれにグリコール類及び／又はアミン類を併用す
ることを特徴とするポジ型フォトレジスト用水性現像液
である。Means for Solving the Problems〉 The present invention solves the problems of the general formula (I) R'R' + 1 (I) (RsN
CHO) nl(] ” OH- (however, n=2 to 7,
R represents an alkyl group having 1 to 4 carbon atoms, and R1 and R2 each independently represent a hydrogen atom or an alkyl group having 1 to 4 carbon atoms. ) This is an aqueous developer for positive photoresists, which is characterized by containing trialkylalkoxy ammonium hydroxide as an essential component. Furthermore, the present invention is an aqueous developer for positive photoresists characterized in that glycols and/or amines are used in combination with the developer, if necessary.
コキシアンモニウムヒドロキシドは、一般式Ｒ３Ｎ（た
だし、Ｒは前述の意味を示す）で示されるトリアルキル
アミンとエチレンオキシドを水溶液中で反応させて製造
するか、又は一般式
（ただし、Ｒ，Ｒ’及びＲ２は前述の意味を示す）で示
される化合物を水酸基置換して製造できる。Coxyammonium hydroxide is produced by reacting a trialkylamine represented by the general formula R3N (where R has the above-mentioned meaning) with ethylene oxide in an aqueous solution, or by reacting a trialkylamine represented by the general formula R3N (wherein R has the above-mentioned meaning) with ethylene oxide, or by reacting the general formula (wherein R, R' and R2 have the above-mentioned meanings) by substituting the compound with a hydroxyl group.
本発明に用いられる上記一般式（Ｉ）で示されるトリア
ルキルアルコキシアンモニウムヒドロキシドとしては、
具体的には下記のような化合物を挙げることができる。The trialkylalkoxy ammonium hydroxide represented by the above general formula (I) used in the present invention includes:
Specifically, the following compounds can be mentioned.
化合物Ｎα 構造式
％式％
上記一般式（１）で示されるトリアルキルアルコキシア
ンモニウムヒドロキシドの水溶液濃度は０．５〜２０％
、好ましくは１〜７％である。Compound Nα Structural formula % Formula % The aqueous solution concentration of trialkylalkoxy ammonium hydroxide represented by the above general formula (1) is 0.5 to 20%
, preferably 1 to 7%.
本発明において必要に応じて含有されるグリコール類と
しては、エチレングリコール、プロピレングリコール、
トリメチレングリコール、ジエチレングリコール、トリ
エチレングリコール、ポリエチレングリコール（一般式
〇〇（Ｃ１，ＣＨ，０）ｍＨ。Glycols contained as necessary in the present invention include ethylene glycol, propylene glycol,
Trimethylene glycol, diethylene glycol, triethylene glycol, polyethylene glycol (general formula 〇〇(C1, CH, 0) mH.
ｍ＝４〜２０、特にｍ＝４〜７が好ましい。）ポリプロ
ピレングリコールが上げられ、これらは単独もしくは混
合物で含有することができる。該グリコール類の濃度は
５Ｑｐｐｍ〜３０％、好ましくは１１００ｐｐ〜１５％
である。m=4-20, particularly m=4-7. ) polypropylene glycols, which can be contained alone or in mixtures. The concentration of the glycols is 5Qppm to 30%, preferably 1100pp to 15%.
It is.
また、必要により含有されるアミン類としては水溶性で
置換基が直鎖、分岐あるいは環状のアミンであり、臭気
の少ないアミンが好ましい。具体的に゛は、イソブチル
アミン、ベンジルアミン、３−メトキシプロピルアミン
、モノエタノールアミン、ジメチルエタノールアミン、
ジエチルエタノールアミン、３−アミノプロパツール、
ピペリジン、２−ピペコリン、１．３−ジアミノプロパ
ン、テトラメチル−１，３−ジアミノプロパン等が挙げ
られる。アミン類は単独もしくは混合物で含有すること
ができる。該アミン類の濃度は１０ｐｐｍ〜３０％好ま
しくは５０ ｐｐｍ〜１５％である。ただし、トリメチ
ルアミンは臭気が強く、実質上含有しないことが好まし
い。特にトリアルキルアルコキシアンモニウムヒドロキ
シドの製造時には現像液中のトリメチルアミンの含量を
正確に制御する必要がある。現像液中のトリメチルアミ
ン含量は好ましくは１１００ｐｐ以下にすることが現像
特性を安定化するのに必要である。Further, as the amines that may be contained if necessary, water-soluble amines having linear, branched or cyclic substituents are preferred, and amines with little odor are preferred. Specifically, ``isobutylamine, benzylamine, 3-methoxypropylamine, monoethanolamine, dimethylethanolamine,
diethylethanolamine, 3-aminopropanol,
Examples include piperidine, 2-pipecoline, 1,3-diaminopropane, and tetramethyl-1,3-diaminopropane. Amines can be contained alone or in mixtures. The concentration of the amines is 10 ppm to 30%, preferably 50 ppm to 15%. However, trimethylamine has a strong odor, so it is preferable that it is substantially not contained. Particularly when producing trialkylalkoxyammonium hydroxide, it is necessary to precisely control the content of trimethylamine in the developer. The content of trimethylamine in the developer is preferably 1100 pp or less in order to stabilize the development characteristics.
また、グリコール類及びアミン類は単独もしく両方含有
されていてもよく、更に好ましい場合が更にまた、本発
明の現像液にＴＭＡＨ及び／またはコリンを混合して使
用することもできる。また、公知の界面活性剤、ケトン
類、−価アルコール類、グリセリン等の多価アルコール
類等の湿潤剤等の添加物を添加することも好ましい。Further, glycols and amines may be contained alone or both, and in a more preferred case, TMAH and/or choline may be mixed with the developer of the present invention. It is also preferable to add additives such as known surfactants, wetting agents such as ketones, -hydric alcohols, and polyhydric alcohols such as glycerin.
本発明の現像液の好適な使用方法についての一例を下記
に示す。An example of a preferred method of using the developer of the present invention is shown below.
シリコンウェハにポジ型フォトレジストをスピンコータ
等で塗布し、これをダイレクトコンタクトホットプレー
トでプリベークすることによって脱溶媒した塗布膜が得
られる。次いでステッパーによって所要のマスクパター
ンの描画されたレチクルを介して露光する。レチクルは
特別に設計した抜きパターン゛が主体となっているライ
ンアンドスペース（バックグラウトが非露光部でレジス
ト膜が残留している）と残しパターンが主体となってい
るラインアンドスペース（バンクグラウンドが露光部で
レジスト膜が除去される）を描画したレチクルを使用す
る。次に、本発明の現像液を使用し、露光したウェハを
自動現像機で現像する。A positive photoresist is applied to a silicon wafer using a spin coater or the like, and then prebaked using a direct contact hot plate to obtain a solvent-free coating film. Next, exposure is performed by a stepper through a reticle on which a desired mask pattern has been drawn. The reticle consists of lines and spaces that consist mainly of specially designed punched patterns (the back grout is the unexposed area and the resist film remains), and lines and spaces that mainly consist of the left pattern (the bank ground remains). Use a reticle with a pattern (the resist film is removed in the exposed area). Next, the exposed wafer is developed using an automatic developer using the developer of the present invention.
露光によって可溶化した部分が選択的に溶解除去され゛
て、マスクパターンの忠実に縮小されたポジ型の画像が
得られる。得られた画像を走査型電子顕微鏡（ＳＥＭ）
で匝察してスカムを判定し、更に抜き感度（抜きパター
ンでスペース部が縮小率を考慮してマスク寸法になった
ときの露光量）と残し感度（残しパターンでライン部が
縮小率を考慮してマスク寸法になったときの露光量）を
測定する。残し感度と抜き感度の差をとって寸法制御性
の良否を判定する。この差が小さいほど寸法制御性がよ
い。The portions solubilized by exposure are selectively dissolved and removed, resulting in a positive image in which the mask pattern is faithfully reduced. The obtained image was scanned using a scanning electron microscope (SEM).
In addition, the extraction sensitivity (the exposure amount when the space part of the punching pattern reaches the mask dimension considering the reduction rate) and the remaining sensitivity (the line part of the remaining pattern takes into account the reduction rate) Measure the exposure amount (when the mask size is reached). The quality of dimensional controllability is determined by taking the difference between the leaving sensitivity and the punching sensitivity. The smaller this difference is, the better the dimensional controllability is.
〈発明の効果〉
本発明になる一般式（Ｉ）で示されるトリアルキルアル
コキシアンモニウムヒドロキシドと必要によりグリコー
ル類及び／またはアミン類を含有する水性現像液を使用
して微細なレジストパターンを形成すると露光（スペー
ス）部にスカムがなく、パターンの寸法制御性が向上す
る。<Effects of the Invention> When a fine resist pattern is formed using the trialkylalkoxy ammonium hydroxide represented by the general formula (I) according to the present invention and an aqueous developer containing glycols and/or amines as necessary, There is no scum in the exposed (space) area, improving pattern dimension control.
〈実施例〉
以下、本発明を実施例及び比較例により具体的に説明す
るが、これによって本発明が制限されるものではない。<Examples> The present invention will be specifically explained below using Examples and Comparative Examples, but the present invention is not limited thereto.
比較例１
ポジ型フォトレジスト（アルカリ可溶性ノボラック附脂
（分子量１４．０００） １４ ｇ、 ｏ−ナフトキノ
ンジアジド系感光剤６ｇ、エチレングリコールエチルエ
ーテルアセテート４２ｇを混合し、０．２μｍのフィル
ターで濾過して得た。）を常法によってシリコンウェハ
にスピナーを用い４０００ｒｐｍで塗布した。これをダ
イレクトコンタクトホットプレートを用い１００℃１分
間プリベークした。得られた膜厚は１．３３μｍであっ
た。ステッパー（ＧＣＡ社製４８００ Ｄ Ｓ Ｗ型
ＮＡ＝０．２８．１０：１）で露光したのち、２．３％
テトラメチルアンモニウムヒドロキシド（ＴＭＡＨ）水
溶液を使用し、２３℃、６０秒パドル法で現像した。Ｓ
ＥＭでパターン観察し、測定結果を第１表にまとめた。Comparative Example 1 Positive photoresist (14 g of alkali-soluble novolac (molecular weight 14.000), 6 g of o-naphthoquinone diazide photosensitizer, and 42 g of ethylene glycol ethyl ether acetate were mixed, and the mixture was filtered with a 0.2 μm filter. ) was coated on a silicon wafer in a conventional manner using a spinner at 4000 rpm. This was prebaked at 100° C. for 1 minute using a direct contact hot plate. The obtained film thickness was 1.33 μm. Stepper (4800 D SW type manufactured by GCA)
After exposure at NA=0.28.10:1), 2.3%
Development was carried out using a tetramethylammonium hydroxide (TMAH) aqueous solution at 23° C. for 60 seconds using a paddle method. S
The pattern was observed using EM, and the measurement results are summarized in Table 1.
比較例２
比較例１と同様にして５．０％コリン水溶液で現実施例
１〜７
現゛像液として第１表の組成の液を調製し、比較例１と
同様にして現像し、結果を第１表にまとめた。Comparative Example 2 In the same manner as in Comparative Example 1, a solution having the composition shown in Table 1 was prepared as a developing solution in Examples 1 to 7 using a 5.0% choline aqueous solution, and developed in the same manner as in Comparative Example 1. are summarized in Table 1.
手 続 補 正 書 （自発）昭和６２年４
月７日Procedural amendment (voluntary) April 1986
7th day of the month
Claims (1)
Ｒ＾１及びＲ＾２はそれぞれ独立に水素原子又は炭素数
１〜４のアルキル基を表わす。） で示されるトリアルキルアルコキシアンモニウムヒドロ
キシドを含有することを特徴とするポジ型フォトレジス
ト用現像液。 ２、グリコール類及び／又はアミン類を併用することを
特徴とする特許請求の範囲第１項に記載のポジ型フォト
レジスト用現像液。[Claims] 1. General formula ▲ Numerical formula, chemical formula, table, etc. ▼ (However, n = 2 to 7, R is an alkyl group having 1 to 4 carbon atoms,
R^1 and R^2 each independently represent a hydrogen atom or an alkyl group having 1 to 4 carbon atoms. ) A developer for a positive photoresist, characterized by containing a trialkylalkoxyammonium hydroxide represented by the following. 2. The developer for positive photoresist according to claim 1, characterized in that glycols and/or amines are used in combination.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9544786A JPS62251745A (en) | 1986-04-24 | 1986-04-24 | Developing solution for positive type photoresist |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9544786A JPS62251745A (en) | 1986-04-24 | 1986-04-24 | Developing solution for positive type photoresist |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62251745A true JPS62251745A (en) | 1987-11-02 |
Family
ID=14137946
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9544786A Pending JPS62251745A (en) | 1986-04-24 | 1986-04-24 | Developing solution for positive type photoresist |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62251745A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018021526A1 (en) * | 2016-07-29 | 2018-02-01 | 旭化成株式会社 | Quaternary ammonium compound and suppression of generation of volatile organic compound from polyacetal utilizing same |
| JP2018024650A (en) * | 2016-08-01 | 2018-02-15 | 旭化成株式会社 | Quaternary ammonium compound |
-
1986
- 1986-04-24 JP JP9544786A patent/JPS62251745A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018021526A1 (en) * | 2016-07-29 | 2018-02-01 | 旭化成株式会社 | Quaternary ammonium compound and suppression of generation of volatile organic compound from polyacetal utilizing same |
| KR20190013987A (en) * | 2016-07-29 | 2019-02-11 | 아사히 가세이 가부시키가이샤 | Quaternary ammonium compound and inhibition of generation of volatile organic compounds from polyacetal using it |
| TWI664215B (en) * | 2016-07-29 | 2019-07-01 | 日商旭化成股份有限公司 | Quaternary ammonium compounds and their use for the inhibition of volatile organic compounds produced by polyacetals |
| US10815190B2 (en) | 2016-07-29 | 2020-10-27 | Asahi Kasei Kabushiki Kaisha | Quaternary ammonium compound, and agent for suppression of generation of volatile organic compound from polyacetal by use of the same |
| JP2018024650A (en) * | 2016-08-01 | 2018-02-15 | 旭化成株式会社 | Quaternary ammonium compound |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0186184B1 (en) | Positive resist developer and method of developing positive resist | |
| TWI254194B (en) | The aqueous solution of surfactant for developing the coating layer | |
| JPH0638159B2 (en) | Developer for positive photoresist | |
| EP0062733B1 (en) | Metal ion-free photoresist developer composition | |
| JP3426055B2 (en) | Developer for photoresist layer | |
| US4628023A (en) | Metal ion free photoresist developer composition with lower alkyl quaternary ammonium hydrozide as alkalai agent and a quaternary ammonium compound as surfactant | |
| JP3104939B2 (en) | Resist developer composition for semiconductor device production | |
| JPH01257846A (en) | Developer for positive type photoresist | |
| EP0874284B1 (en) | Developer for a positive electron beam resist composition | |
| JPS62251745A (en) | Developing solution for positive type photoresist | |
| EP1639412A2 (en) | Developer composition for resists and method for formation of resist pattern | |
| JP2543348B2 (en) | Developer for positive resist | |
| JP2527172B2 (en) | Developer for positive photoresist | |
| JPS63259560A (en) | Organic alkali developer for positive type photoresist | |
| JP2542042B2 (en) | Photosensitive composition | |
| JPH02160246A (en) | Developing solution for positive type resist | |
| JPH03260655A (en) | Developing aqueous solution and development of photoresist | |
| JPH0238942B2 (en) | ||
| JPS5962850A (en) | Development composition and method for photoresist | |
| JP2947370B2 (en) | Photoresist developer | |
| JPH04346351A (en) | Developing solution for photoresist | |
| JP4294822B2 (en) | Resist developer | |
| JPH0455504B2 (en) | ||
| JPH0562736B2 (en) | ||
| JPS63204254A (en) | Method for developing photoresist |