JPS62250422A - Liquid crystal panel and its production - Google Patents

Abstract

PURPOSE:To obtain a nonlinear resistance characteristic necessary for switching of picture elements by providing joint parts to the two points between the bus-bar layer of a semiconductor layer essentially consisting of selenium and tellurium on a substrate and picture element electrode layer. CONSTITUTION:A transparent conductive film (ITO) consisting of indium oxide including tin oxide is formed on the glass substrate 1. Resist patterns of the bus-bar layer 2 and the transparent picture element electrode layer 3 are formed on the ITO film by using the 1st mask and the etching of the ITO film is executed. A mask formed by boring holes of a prescribed pattern to stainless steel foil having about 50mum thickness is fixed to the substrate 1 having the resulted bus-bar layer 2 and the picture element electrode layer 3 and the semiconductor layer 4 is formed by a resistance heating vapor deposition method. A glass substrate formed with a belt-like electrode of the ITO on the surface is used as another substrate and a liquid crystal panel is obtd.

Description

DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a liquid crystal panel for displaying images and alphanumeric links, and a method for manufacturing the same. In particular, the present invention provides a liquid crystal panel with a large display capacity and a high contrast display, and a method for manufacturing the same.

BACKGROUND OF THE INVENTION Currently, liquid crystal panels are evolving from those with relatively small display capacities, such as watches and calculators, to those with large display capacities, such as portable computers, word processor terminals, and color televisions. However, when a liquid crystal panel is time-divisionally driven, as the number of scanning lines increases, the ratio of the effective voltage applied to on pixels to off pixels approaches 1.
In the so-called simple matrix method using vertical and horizontal band-shaped electrodes, when the number of scanning lines reaches about 200, satisfactory contrast cannot be obtained. (For example, Nikkei Electronics September 10, 1984 issue (351) and 1984
January 19 issue (Arashi 356) In recent years, in order to solve the above-mentioned problems and enable larger-scale matrix drive, the twist angle of the liquid crystal molecular axis has been made larger than the conventional 90", and birefringence has been increased. The supertwist birefringence effect (S B
E; Supertwisted Biretr-
ingence Effect) Development of liquid crystal panels,
The development of liquid crystal panels using ferroelectric liquid crystals and liquid crystal panels in which each pixel is equipped with switching elements such as thin film transistors, PN or PIN diodes, and nonlinear resistance elements is underway. The present invention relates to a liquid crystal panel using a non-linear resistance element. Note that the nonlinear resistance element is a two-terminal element whose current-voltage characteristics exhibit nonlinearity.

Liquid crystal panels using non-linear resistance elements can easily display full color compared to SBE liquid crystal panels, can display using ordinary twisted nematic type or guest-host type liquid crystals, and are easier to display than thin film transistors. Since the manufacturing process is relatively simple, the production yield is high and the product is relatively inexpensive.

A conventional example of a liquid crystal cell using this non-linear resistance element will be described below with reference to the drawings.

Figure 7 shows a non-linear resistance element (MIM element; Metal-Insulat) with a structure in which an insulator is sandwiched between two metals.
FIG. 2 is a perspective view showing an example of a structure near a pixel on one substrate of a liquid crystal panel in which each pixel is provided with an or-Metal element. In FIG. 7, polyimide layer 4
6 is sufficiently thick that almost no current flows through the pixel electrode layer 43, so current flows through the MIM element having a structure in which an anodized tantalum layer 45 is sandwiched between a tantalum layer 44 and a chromium layer 47 forming a bus bar. FIG. 8 shows a conventional example of a liquid crystal panel using an MIM element having a structure different from that shown in FIG. Fig. 8(a) is a plan view of the vicinity of the pixel, Fig. 8(b) is A
It is a sectional view taken along the -A' line. The tantalum layer 52 forming the bus bar is covered with an anodized tantalum layer 53, and an MIM element having a structure in which the anodic oxidized tantalum layer 53 is sandwiched between the tantalum layer 52 and the chromium layer 54 is connected to the pixel electrode layer 55. . That is, FIG. 7 shows an example in which the MIM element is formed on the side surface of the tantalum layer, and FIG. 8 shows an example in which the MIM element is formed on the top surface of the tantalum layer.

Such a liquid crystal panel has a simple structure, requires only three masks during microfabrication, and has a high yield. The current-voltage characteristics of these MIM elements exhibit non-linearity as shown in FIG. By utilizing this characteristic and operating the above-mentioned MIM element as a type of switching element, it is possible to prevent a decrease in contrast due to an increase in the number of scanning lines, and it is possible to greatly increase the display capacity of a liquid crystal panel.

(For example, Journal of the Television Society, Vol. 38, No. 4 (198
4) Pages 354-356, Information Display Society (SI)
D; 5ocietyFor Information
Displsay's 1984 International Symposium Technical Proceedings (SID Inter-national
Symp.

-sium Digest Of Technical
(Papers) Pages 304-305) Problems to be Solved by the Invention MIM devices use a tantalum anodic oxide film as an insulating layer, but during anodization, dust etc. are present on the tantalum, causing holes in the anodic oxide film. When this occurs, if a chromium layer is formed thereon, the tantalum layer and the chromium layer have the disadvantage that even if the hole is very small, the tantalum layer and the chromium layer become electrically short-circuited.

Furthermore, at least three masks are required to fabricate the substrates shown in FIGS. 7 and 8, but this is still considered to be a rather large number.

On the other hand, an equivalent circuit of a liquid crystal panel using non-linear resistance elements is shown in FIG. In order for this panel to operate normally, current must flow mainly through a path consisting of a nonlinear resistor 61 and a liquid crystal layer capacitor 64. However, as the number of scanning lines increases and the drive signal frequency increases, the nonlinear resistance increases. Parallel capacity 6
Since the impedance of the capacitor 2 decreases, current flows from the parallel capacitor 62 to the capacitor 64 of the liquid crystal layer, and the nonlinear resistance element no longer functions properly. In order to avoid this capacitive coupling and ensure a sufficient number of scanning lines, the nonlinear element parallel capacitance 62 must be small. The configuration shown in FIG. The above capacitance is reduced by reducing the area, but for this purpose the tantalum must be etched into a tapered shape.The above capacitance depends on the angle of the tapered etching.
It is considered difficult to make these angles uniform, especially in large-area panels. On the other hand, in the configuration shown in FIG. 8, it is necessary to process tantalum into a fine pattern of about 10 μm, and it is thought that the yield in this process will be poor. In addition, when reducing the capacitance by using a material with a lower dielectric constant than tantalum oxide as an insulating layer, it is necessary to
In both cases, four masks are required, making the process somewhat complicated.

Means for Solving the Problems In order to solve the above problems, the present invention provides a liquid crystal panel in which at least one of the substrates sandwiching the liquid crystal layer is placed on a transparent wAAa body at a predetermined interval. It has a pixel electrode layer and a bus bar layer facing each other, and the spacer and a part of the transparent pixel electrode layer on both sides thereof
The structure includes a semiconductor layer whose main components are selenium and tellurium and covers a part of the bar layer. Further, the semiconductor layer is formed by a vapor deposition method.

Function The present invention solves the above problems as follows. In the present invention, the semiconductor layer mainly composed of selenium and tellurium formed on at least one substrate is
It has two junctions, one with the bar layer and the other with the pixel electrode layer, and the current-voltage characteristics of these junctions are mainly used to perform the switching of the pixels of the liquid crystal panel. Non-linear resistance elements with a value of 0 or more, where non-linear resistance characteristics occur, do not have a configuration in which two conductor layers sandwich an insulating layer in the thickness direction, so even if a minute hole is created in the semiconductor layer, The non-linear resistance element is never short-circuited. Therefore, pixel defects are less likely to occur and the product yield is greatly improved. Furthermore, it is also possible to greatly simplify the manufacturing process by reducing the number of masks required when manufacturing the substrate to two. Furthermore, since the capacitance of the two junctions is connected in series, the capacitance of the non-linear resistance element is small, so there is an advantage that capacitive coupling between the element and the pixel can be avoided even if the element size is slightly increased. Furthermore, since the formation of semiconductor layers by vapor deposition has a high degree of freedom in terms of vapor deposition sources and procedures,
This makes it possible to easily manufacture elements exhibiting desired characteristics at a high yield.

EXAMPLE Hereinafter, an example of the liquid crystal panel of the present invention and its manufacturing method will be described with reference to the drawings.

(Example 1) An example of the liquid crystal panel and its manufacturing method according to the present invention will be described using FIG. 1 and FIGS. 2(a) and ('b). In the liquid crystal panel according to the present invention, at least one of the substrates sandwiching the liquid crystal layer has a perspective view of the vicinity of the nonlinear resistance element shown in FIG. 1, and a plan view shown in FIG.
The cross-sectional view taken along line A' is shown in Figure 2). This structure is characterized in that the bus bar layer 2 and the pixel electrode layer 3 are formed of the same type of transparent conductive material, the number of masks required is two, and the process is extremely simple. ing. In this embodiment, a non-linear resistance element is formed by a structure in which a semiconductor layer 4 is extended between a bus bar layer 2 and a pixel electrode layer 3. In an element with this structure, there are two junctions, one between the bus bar layer 2 and the semiconductor layer 4, and the other between the pixel electrode layer 3 and the semiconductor layer 4, and the current mainly flows through these junctions. - Based on the voltage characteristics, the device did not become electrically short-circuited in the zero-wire structure, which causes non-linear resistance in the device characteristics. Also,
The capacitance of this element is small enough to be used as a switching element for liquid crystal because the capacitances of two junctions are connected in series, and it is about 0.01 pF to 0.3 pF when patterned with a minimum line width of about 30 μm to 50 μm. Met. In this way, since the minimum line width in the device is relatively large, the device is easy to manufacture and defects such as disconnection are less likely to occur.
Product yield was very good.

The liquid crystal panel according to the present invention was manufactured as follows. In this embodiment, bus bar layer 2 and pixel electrode layer 3
are made of the same type of transparent conductive material.

First, a transparent conductive film (IT) made of indium oxide (Into:+) containing tin oxide (S n O
Approximately 1,500 people formed O membranes. This film is made of In,O containing 5% by weight of SnO□.

The substrate was prepared by heating the substrate to 250'C in an argon gas containing 20% oxygen, targeting a sintered body of . A resist pattern of bus bar layer 2 and transparent conductive material 3 was formed on this ITO film by photolithography using a first mask. Thereafter, the ITO film was etched using a wet etching method. The etching solution is ferric chloride hexahydrate (F e C1s
/ 6 Hz O) 500 grams and concentrated hydrochloric acid (HCI)
Pure water was added to 300 grams to make 1 liter.
Next, unnecessary resist was removed using resist removal liquid J-100 manufactured by Nagase Kasei Kogyo ■. Thereafter, the substrate was thoroughly washed with methyl alcohol, dried, immersed in fuming nitric acid for about 3 minutes, thoroughly rinsed with water, and dried.

On the substrate l having the bus bar layer 2 and the pixel electrode layer 3 produced as described above, a mask made of stainless steel foil with a thickness of about 50 μm with holes in a predetermined pattern was fixed, and a resistor was A semiconductor layer was formed by a heated evaporation method. Vapor deposition was performed as follows. First, predetermined amounts of selenium (Se) and tellurium (Te) are weighed, mixed well, and then placed in a vapor deposition heater. Next, the heater and the substrate were attached to a vapor deposition apparatus, and after sufficient evacuation, the heater was heated to perform vapor deposition. The film thickness was between 300 and 1 μm. This produced one side of the substrate. In addition,
In this example, if the threshold value of the element is too low,
A substrate configuration in which two or three stages of elements are connected in series was used.

This also applies to other embodiments. FIG. 6 shows an example of current-voltage characteristics of an element connected in series in two stages. The current is proportional to approximately the seventh power of the voltage, and exhibits sufficiently steep nonlinearity.

Next, a liquid crystal panel was manufactured using the glass substrate on which the IT◯ band-shaped electrode was formed as the other substrate. A normal twisted nematic liquid crystal panel was fabricated by using polyimide as an alignment film and performing alignment by a rubbing method. In addition, considering that the melting point of selenium, which is one of the main components of the semiconductor layer 4, is approximately 220°C, the polyimide is a low-temperature firing type (for example, JI manufactured by Nippon Synthetic Rubber Co., Ltd.).
B-1) was used, and the firing temperature was between 100°C and 170°C.

In the above explanation, the bus bar layer 2 and the pixel electrode layer 3 are made of ITO, but they can also be made of other transparent conductive materials, and a liquid crystal panel can be formed by the same process. .

Commercially available tin oxide (S n O2) is used as a transparent conductive material.
etc. can be used. Further, good results were obtained when the mixing ratio of selenium and tellurium in the vapor deposition source was between 1:2 and 1:4 by weight.

The liquid crystal panel produced as described above was able to obtain sufficient contrast and good display even during high time-division driving, in which almost no contrast can be obtained with a normal twisted nematink liquid crystal panel.

Table 1 summarizes the contrast measured with transmitted light using polarizing plates arranged in a balanicol arrangement, together with the materials for forming the bus bar layer 2 and the pixel electrode layer 3, and the method for forming the semiconductor layer 4.

Table 1 The duty ratio is 11,500, and driving is performed using a voltage averaging method in which the peak value of the voltage applied to the selected pixel when selected is 3 to 9 times the peak value of the voltage applied to the pixel when not selected. The most suitable one was used.

In this example, good contrast characteristics are achieved through a very simple process. Further, the current-voltage characteristics of the nonlinear resistance element were completely symmetrical in positive and negative directions, and exhibited sufficiently steep nonlinearity to be used as a switching element during high time division driving.

(Example 2) This example will be described using FIG. 1 and FIGS. 2(a) and (b). First, a substrate 1 having a bus bar layer 2 and a pixel electrode layer 3 was produced in the same manner as in Example 1. On this substrate, a mixture of selenium (Ss) doped with arsenic (As) and tellurium (Te) without additives was used in Example 1.
A semiconductor II4 was formed by the resistance heating evaporation method in the same manner as above to obtain one side of the substrate. The thickness of the semiconductor layer 4 was between 300 and 1 μm. Next, a liquid crystal panel was produced in the same manner as in Example 1, using a glass substrate on which ITO strip electrodes were formed as the other substrate.

In this example as well, the current-voltage characteristics of the fabricated device were symmetrical in positive and negative directions and showed sufficiently steep nonlinearity, and a liquid crystal panel with good contrast was fabricated using a simple process. The panel of this example has better thermal stability of the element than that of Example 1. Further, good results were obtained when the mixing ratio of selenium and tellurium in the vapor deposition source was between 1:2 and 1:4 by weight. Table 2 summarizes the contrast measured using transmitted light, together with the materials for forming the bus bar layer 2 and the pixel electrode layer 3, and the method for forming the semiconductor layer 4.

Table 2 The duty ratio and driving method were the same as in Example 1.

(Example 4) This example will be described using FIG. 1 and FIGS. 2(a) and (b). First, a substrate 1 having a bus bar 11i2 and a pixel electrode layer 3 was manufactured in the same manner as in Example 1. Next, a metal mask similar to that in Example 1 was placed on this substrate, and a selenium layer of 50 to 300 layers was formed by resistance heating evaporation using selenium grains containing 0.1% by weight to 10% by weight of arsenic as a deposition source. Then, 1 μm was deposited from 200 people using a resistance heating evaporation method using an alloy of selenium and tellurium (Se t-8Tex and X≧0.7) as a deposition source.
A layer was formed. At this time, a second layer was also produced using pure tellurium as the vapor deposition source. This is the molecular formula shown above, where X=
Corresponds to 1. As described above, the semiconductor layer 4
was formed to produce one side of the substrate. Next, a liquid crystal panel was produced in the same manner as in Example 1, using a glass substrate on which ITO strip electrodes were formed as the other substrate.

In this example, selenium containing arsenic was used, so
The thermal stability of the device was better than that of Example 3. In addition, the current-voltage characteristics of the fabricated device were symmetrical in positive and negative directions and showed sufficiently steep nonlinearity, and the contrast of the fabricated panel was also sufficiently high. Table 4 summarizes the contrast measured with transmitted light when polarizing plates are arranged in a paranicol manner, together with the materials for forming the HasP layer 2 and the pixel electrode layer 3, and the method for forming the semiconductor layer 4.

Table 4 The duty ratio and driving method are the same as in the first embodiment.

(Example 5) An example of the liquid crystal panel according to the present invention will be described using FIG. 3 (al.(1)). FIG. 3(a) is a plan view of the vicinity of the nonlinear resistance element, and FIG. 3(b) is a sectional view taken along line AA'. This example is an example of a structure in which metal N15 is interposed between the pixel electrode layer 13 and the semiconductor layer 14. In this embodiment, metal is used for one layer of the bus bar to lower its resistance, so it can be passed through a panel in which the bus bar is made particularly fine or a large panel with a long bus bar layer.

First, about 1,500 people formed an ITO film on a substrate 11 made of glass in the same manner as in Example 1. A resist pattern for the pixel electrode layer 13 was formed on this ITO film by photolithography using a first mask.

Thereafter, in the same manner as in Example 1, the ITO film was etched to remove unnecessary resist. Next, a metal film with a thickness of approximately 500 mm was fabricated using an electron beam evaporation method. A resist pattern of the bus bar layer 12 and the metal layer 15 was formed on this metal film by photolithography using a second mask, and the metal layer 15 was etched. The above metal layer is formed of a chromium (Cr) film or a double layer film of chromium and titanium (Ti), and the chromium is a mixture of cerium ammonium nitrate and perchloric acid diluted with pure water. Titanium was etched using 1% hydronic acid. Next, unnecessary resist was removed in the same manner as in Example 1.

A semiconductor layer 14 was formed in the same manner as in Example 1 or Example 2 using the substrate 11 having the bus bar layer 12, pixel electrode layer 13, and metal 1i15 manufactured as described above. . In addition, good results were obtained when the thickness of the semiconductor layer 14 was between 300 and 1 μm, and when the mixing ratio of selenium and tellurium in the evaporation source was between 1:2 and 1:4 by weight. Next, a liquid crystal panel was assembled in the same manner as in Example 1.

In this example as well, good device characteristics and good panel characteristics could be obtained. Table 5 summarizes the contrast measured using transmitted light, together with the materials for forming the bus bar layer 12 and the metal layer 15, and the method for forming the semiconductor layer 14.

Table 5 ■ The duty ratio and driving method are the same as in the first embodiment.

Note that in the liquid crystal panel of this example, the photoexcitation current was suppressed due to the presence of the metal layer 15, and the influence of the irradiation light intensity on the panel characteristics was extremely small.

(Embodiment 6) Another embodiment of the liquid crystal panel according to the present invention will be described using FIGS. 3(a) and 3(b).

First, in the same manner as in Example 5, a substrate 11 having a helical bar layer 12, a pixel electrode layer 13, and a metal layer 15 was produced. A semiconductor layer 14 was formed on this substrate in the same manner as in Example 3 or 4, and a liquid crystal panel was assembled in the same manner as in Example 1.

Table 6 shows the contrast measured with transmitted light for the materials forming the bus bar layer 12 and the metal layer 15, and for the semiconductor layer 14.
This is summarized together with the formation method.

Table 6 The duty ratio and driving method are the same as in the first embodiment.

Further, as in Example 5, the influence of the irradiation light intensity on the panel characteristics during light irradiation was very small.

(Example 7) Figure 4 fal (bl and Figure 5 (a) to +d)
An embodiment of the liquid crystal panel according to the present invention will be described using the following. Fig. 4 ta) is a plan view of the vicinity of the nonlinear resistance element;
FIG. 4(b) is a sectional view taken along the line AA', and FIG. 5 is an explanatory view of the manufacturing process.

First, an ITO film 32 of approximately 1,500 layers was formed on a substrate 21 made of glass in the same manner as in Example 1, and a metal film 33 of approximately 500 layers of thickness was further formed using electron beam evaporation. As a result, the structure shown in FIG. 5fa) was obtained. A resist pattern for the bus bar layer 22 and the pixel electrode layer 23 is formed on this metal film by photolithography using a first mask, and the metal film and ITo film are etched in the same manner as in Example 5. and remove the resist.
The structure of FIG. 5 (bl) was obtained. The same metal film as in Example 5 was used.

Next, a semiconductor layer 34 was formed in the same manner as in any of Examples 1 to 4. As a result, the structure shown in FIG. 5(C) was obtained. Next, the metal 1i33 was etched using the semiconductor Jii34 as a mask. At this time, no etching of the semiconductor layer was observed. As a result, all of the metal film in the area where the semiconductor layer 34 is not present is removed, and as shown in FIG.
A substrate with a nonlinear resistance element having the structure shown in d), that is, the structure shown in FIGS.

Next, the panel was assembled in the same manner as in Example 1.

In this example, a non-linear resistance element can be manufactured using the self-alignment method with one less mask than in Example 5 or Example 6, but the characteristics of the obtained panel are different from those in Example 5 or in the example 6. It was almost the same as that of Example 6, and was very good. Furthermore, the difference in panel characteristics due to the intensity of the irradiated light during light irradiation was very small.

In any of the above embodiments, the capacitance of the nonlinear resistance element is approximately 0.01 to 0.3 pF, and the capacitance of the liquid crystal layer (several pF) is approximately 0.01 to 0.3 pF.
(approximately F).

In addition, there is no possibility that the element will be in an electrical short-circuit state,
The yield was also very good.

In addition, in the above embodiment, the semiconductor layers 4, 14, 2
Although patterning was performed using a metal mask when forming semiconductor layers 4, 4, 14, and 24 having similar shapes can also be formed by a soft-off method using a photoresist. Furthermore, in Examples 1 to 4 and Example 7, by adding a low-resistance metal layer along the bus bar layer 2 or 22, the resistance of the bus bar can be greatly reduced, especially when the panel The display can be made better when the image is large. In the case of Examples 5 and 6, the same effect as described above can be obtained by adding a metal N having a lower resistance (for example, an aluminum layer) along the bus bar layer 12.

Effects of the Invention As can be seen from the results shown above, the present invention has a very simple structure and process, which prevents electrical short circuits from occurring.
This method creates a liquid crystal panel that is equipped with a non-linear resistance element that has a small capacitance and sufficient non-linearity, and can provide good display even during high time divisions, and contributes to increasing the display capacity of liquid crystal panels. However, it is large.

[Brief explanation of drawings]

FIG. 1 is a perspective view of a part of one side substrate of a liquid crystal panel showing an example of the present invention, FIG. 2(a) is a plan view thereof, and FIG.
b) is a sectional view thereof, FIG. 3 (al is a plan view of one side substrate of a liquid crystal panel showing another example of the present invention, FIG. Another side port, FIG. 6 is a characteristic diagram showing an example of the current-voltage characteristics of the nonlinear resistance element according to the present invention, FIG. 7 is a configuration perspective view showing a conventional example, and FIG.
Figures (a) and (b) are a plan view and a sectional view showing another conventional example,
FIG. 9 is a characteristic diagram showing an example of MIM element current-voltage characteristics, and FIG. 10 is an equivalent circuit diagram of a liquid crystal panel having a nonlinear resistance element. 1.11.21.31.41.51...Substrate,
2.12.22...Pass bar layer, 32...
...ITO film, 3.13.23.43.55...
... Pixel electrode layer, 4.14.24.34 ... Semiconductor layer, 15.25.33 ... Metal layer, 42.
...Thermal oxidation tantalum layer, 44.52...
Tantalum layer, 45.53... Anodized tantalum layer, 46... Polyimide layer, 47.54...
...Chromium layer, 56...Non-linear resistance element part,
61...Non-linear vA low resistance 62...Non-linear resistance parallel capacitance, 63...Resistance of liquid crystal layer, 64
... Capacity of liquid crystal layer, 65 ... Nonlinear resistance element, 66 ... Liquid crystal layer. Name of agent Patent attorney Toshio Nakao Haka1 person Figure 1 4 Atsushi A 4~) Figure 2 Figure 3 Figure 4 Basunoku-1 Congee 5 Figure 6 Current (〃) Figure 7 Figure 8 Figure 9 Electric soft (V Figure 10

Claims (11)

[Claims] (1) At least one of the substrates sandwiching the liquid crystal layer has a pixel electrode layer and a bus bar layer facing each other with a predetermined gap on a transparent insulator, and the gap and the Selenium (Se) and tellurium (Te) covering a part of the pixel electrode layer and a part of the bus bar layer on both sides.
A liquid crystal panel characterized by having a semiconductor layer containing as a main component. (2) Claim (1) characterized in that the bus bar layer and the pixel electrode layer are made of the same type of transparent conductive material.
LCD panel described in section. (3) The liquid crystal panel according to claim (1), wherein the pixel electrode layer is formed of indium oxide (In_2O_3) containing tin oxide (SnO_2) or tin oxide. (4) The liquid crystal panel according to claim (1), wherein a metal layer is formed between the semiconductor layer and the pixel electrode layer in a shape that includes at least an overlapping portion of both. (5) The metal layer between the semiconductor layer and the pixel electrode layer is formed of the same kind of metal as the bus bar layer.
4) The liquid crystal panel described in section 4). (6) The metal layer between the semiconductor layer and the pixel electrode layer is made of chromium (
The liquid crystal panel according to claim (4), which is formed of either Cr) or titanium (Ti). (7) A method for manufacturing a liquid crystal panel, which comprises forming at least one semiconductor layer containing either or both of selenium and tellurium as main components on a substrate by vapor deposition. (8) A method for manufacturing a liquid crystal panel according to claim (7), using a mixture of tellurium and selenium in a weight ratio of 2:1 to 4:1 as a deposition source. (9) Claim No. 2, in which a mixture of tellurium and selenium containing arsenic (As) with a molar fraction of 10% or less is mixed in a weight ratio of 2:1 to 4:1 as a vapor deposition source. 7)
Manufacturing method of liquid crystal panel described in section. (10) A step of forming a selenium layer by a vapor deposition method, and then forming a selenium layer by a vapor deposition method using an alloy of selenium and tellurium (Se_1_−_xTex and X≧0.7) containing tellurium with a mole fraction of 70% or more as a vapor deposition source. A method for manufacturing a liquid crystal panel according to claim 7, wherein a semiconductor layer is formed on a substrate by the step of forming a tellurium alloy layer. (11) A step of forming a selenium layer containing arsenic by a vapor deposition method using selenium containing arsenic with a molar fraction of 10% or less as a vapor deposition source, and then an alloy of selenium and tellurium (Se_1_ −_xTex and X≧0.
7) A method for manufacturing a liquid crystal panel according to claim 7, wherein a semiconductor layer is formed on a substrate by a step of forming an alloy layer of selenium and tellurium by a vapor deposition method using a vapor deposition source.