JPS62248289A - Method and apparatus for forming fine conductor layer pattern - Google Patents
Method and apparatus for forming fine conductor layer patternInfo
- Publication number
- JPS62248289A JPS62248289A JP9258186A JP9258186A JPS62248289A JP S62248289 A JPS62248289 A JP S62248289A JP 9258186 A JP9258186 A JP 9258186A JP 9258186 A JP9258186 A JP 9258186A JP S62248289 A JPS62248289 A JP S62248289A
- Authority
- JP
- Japan
- Prior art keywords
- conductor layer
- layer pattern
- fine conductor
- forming
- base material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004020 conductor Substances 0.000 title claims description 27
- 238000000034 method Methods 0.000 title claims description 25
- 239000000463 material Substances 0.000 claims description 20
- 239000000919 ceramic Substances 0.000 claims description 19
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 238000007650 screen-printing Methods 0.000 claims description 3
- 230000002093 peripheral effect Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 4
- 238000007772 electroless plating Methods 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- 238000004381 surface treatment Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910052614 beryl Inorganic materials 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011104 metalized film Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Landscapes
- Manufacturing Of Printed Wiring (AREA)
- Printing Plates And Materials Therefor (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は微細導体層パターンの形成方法とその装置に
保見特に、セラミックス基材がら成る円筒形状の外周面
に微細導体層パターンの形成方法とその装置に関するも
のである。[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to a method for forming a fine conductor layer pattern and an apparatus therefor, particularly a method for forming a fine conductor layer pattern on the outer peripheral surface of a cylindrical shape made of a ceramic base material. and its equipment.
周知のように、半導体デバイスの開発・製造に伴って、
今日家゛ＩＩＬ製品から産業機器に至るまで小型化、軽
量化、高速化、高密度化、高信頼性化。As is well known, with the development and manufacturing of semiconductor devices,
Today, everything from home IIL products to industrial equipment is becoming smaller, lighter, faster, more dense, and more reliable.
低価格の要請はますます強くなシ、Ｐ３えルＪのない技
術革新が展開されている。As the demand for lower prices becomes stronger and stronger, technological innovations without P3E are being developed.
これらの動向の中で、岐近注目されているのがエンジニ
アリングセラミックスである。Among these trends, engineering ceramics are currently attracting attention.
エンジニアリングセラミックスは従来の陶磁器とは異な
シ、工業的に高性能化を図ったものでめシ、窒化ケイ素
、炭化ケイ素、アルミナ、ジルコニア、酸化クロム添加
アルミナ、チタン酸バリウム・酸化亜鉛・ベリ１７ヤ、
および各種焼結フェライト等があげられる。Engineering ceramics are different from conventional ceramics, and are made with industrially improved performance. They include silicon nitride, silicon carbide, alumina, zirconia, alumina added with chromium oxide, barium titanate, zinc oxide, and Beryl 17 ceramic. ,
and various sintered ferrites.
エンジニアリングセラミックスは典型的な素性材料でめ
るが、金属やプラスチックに比較して高硬度であシ、耐
摩耗性、耐食性、耐熱性に優れてシシ、添加剤の種類に
よっては高熱伝導性を有する。Engineering ceramics are made of typical basic materials, but compared to metals and plastics, they have high hardness, excellent wear resistance, corrosion resistance, and heat resistance, and depending on the type of additives, they have high thermal conductivity. .
又２通信情報量の増加、広域通信システムの発展に伴っ
て、マイクロ波回路の小型化が兼請されている。In addition, with the increase in the amount of communication information and the development of wide area communication systems, the size of microwave circuits has also been reduced.
マイクロ波の小型化は電磁波の波長が基準とな９１円筒
形状の場合次式で示される。The miniaturization of microwaves is expressed by the following equation when the wavelength of the electromagnetic wave is a reference 91 and has a cylindrical shape.
Ｄ：誘電体共損器の直径
ｆ・共振周彼数
Ｃ：光速
ε、：比誘電率
＋１１式に示したように、マイクロ波回路の小型化には
誘電体の比誘電率（ｅρの大きい材料が望ましいことが
わかり、エンジニアリングセラミックスはかかる点にお
いて最も有望な材料である。D: Diameter f of dielectric co-losser, resonant frequency Height number C: Speed of light ε, : Relative permittivity + 11 As shown in equation materials have proven desirable, and engineering ceramics are the most promising materials in this regard.
以上のように、高硬度、耐食性、耐摩耗性、耐熱性、比
誘電率等の材料特性を生かした分野への利用方法が確立
しているが、材料の脆性に加え。As mentioned above, methods have been established to utilize material properties such as high hardness, corrosion resistance, abrasion resistance, heat resistance, and dielectric constant, but in addition to the brittleness of the material.
電気伝導性が劣っておシ、セラミックスから成る基材表
面に表面処理技術を応用して金４化することによシセラ
ミックスからなる基材表面に電気伝導性を付与し、さら
に応用分野を広げることが期待されている。By applying surface treatment technology to the surface of a base material made of ceramics, which has poor electrical conductivity, and converting it to gold, we can impart electrical conductivity to the surface of the base material made of ceramics, further expanding the field of application. It is expected that.
かかる表面処理においては、厚膜混成集積回路の製造技
術で、 ’ｉｉ子回路形成に所要の導電性ペーストをス
クリーン制版技術と焼成するという技術を確立している
が、この場合においては印刷配線板のように非常に単純
な形状で１円筒形状には困難である。For such surface treatment, we have established a technology for manufacturing thick-film hybrid integrated circuits in which the conductive paste required for forming secondary circuits is baked using screen printing technology. It is difficult to make it into a single cylindrical shape with a very simple shape like this.
又、他の表面処理技術として２例えば、ア）真空蒸着法
、又はスパッタリング法、イ）無電解及び電解めっき法
、つ）ケミカルエツチング法等が挙げられる。Other surface treatment techniques include, for example, a) vacuum evaporation or sputtering, b) electroless and electrolytic plating, and c) chemical etching.
上記のような従来のセラミックス基材から成る円筒形状
の外周面に微細導体層パターンの形成方法とその装置で
は次に述べるような問題点が挙げられる。The conventional method and apparatus for forming a fine conductor layer pattern on the outer peripheral surface of a cylindrical shape made of a ceramic base material as described above have the following problems.
即ち、上記（７）の方法によれば、セラミックス基材か
ら成る円筒形状の外周面に微細導体層パターンを形成す
るためのマスクを行なって、Ｘ空蒸着。That is, according to the method (7) above, a mask is used to form a fine conductor layer pattern on the outer peripheral surface of a cylindrical shape made of a ceramic base material, and X-vacuum deposition is performed.
又はスパッタリング装置にセットし、所要の真空度で、
所要の金縞例えばクロム、ニッケル、銅。Or set it in a sputtering device and use the required vacuum level.
Required gold stripes e.g. chrome, nickel, copper.
金、アルミニウム、銀２合金等を加熱・溶融させ。Heat and melt gold, aluminum, silver 2 alloy, etc.
セラミックス基材上に堆積させるのである。It is deposited on a ceramic substrate.
上記の方法では、メタライズ層を比較的厚く。In the above method, the metallized layer is relatively thick.
例えば１ｏｏｏＸ以上成膜するのに長時間（約５時間以
上）袈し２例え、厚くできても数μｍ という厚みで、
実用に供することは困難である。For example, if it takes a long time (about 5 hours or more) to form a film of 100X or more, the thickness is only a few μm even if it can be made thicker.
It is difficult to put it into practical use.
さらに、微細導体層パターンを形成するためのマスクを
行なう際、長時間要し、マスク作業前に先だって行なつ
念洗浄工程で洗浄し九表面を維持することができないた
めに、成膜したメタライジング層においても良好な密着
性を確保することができない。Furthermore, when masking to form a fine conductor layer pattern, it takes a long time and the surface cannot be maintained by cleaning in the thorough cleaning process performed before the masking process, so the metallized film formed on the surface cannot be cleaned. Even in the layers, good adhesion cannot be ensured.
上記（イ）の方法によれば、セラミック基材から成る円
筒形状の外周面に微細導体層パターンを形成するための
マスクを行ない、その後所定の前処理を行ない、所要の
無電解めっきを行なって、その後所要の電解めっきを行
なうものである。According to the method (a) above, a mask is applied to form a fine conductor layer pattern on the outer peripheral surface of a cylindrical shape made of a ceramic base material, and then a predetermined pretreatment is performed and the required electroless plating is performed. Then, the required electrolytic plating is performed.
かかる方法では、微細な導体層パターンを形成するため
のマスク作業が非常に困難である。例え可能になつ友と
しても前処理作業においてフッ化水素酸、硝酸等の強酸
を使用するので、溶解又はめつき液の浸透等により実用
に供することはできない。In such a method, mask work for forming a fine conductor layer pattern is extremely difficult. Even if it were possible to do so, it cannot be put to practical use because strong acids such as hydrofluoric acid and nitric acid are used in the pretreatment process, such as dissolution or penetration of the plating solution.
上記（■の方法によれば、セラミック基材からなる円筒
形状の外周面に所定の前処理を行ない、その後所要の無
電解めっき及び電解めっきを行なっ九後、微細導体層パ
ターンを形成するためにマスクを行ない、上記めっき層
を溶解除去するのであるが、微細導体層パターン形成用
のマスク、即ちレジスト膜の形成において９円筒形状の
露光、現像処理は非常に困難であるう
という問題点があつ念。According to the method (■) above, the outer peripheral surface of a cylindrical shape made of a ceramic base material is subjected to a predetermined pretreatment, and then the required electroless plating and electrolytic plating are performed.After that, a fine conductor layer pattern is formed. A mask is used to dissolve and remove the plating layer, but there is a problem in that it is extremely difficult to expose and develop a cylindrical shape when forming a mask for forming a fine conductor layer pattern, that is, a resist film. Just in case.
この発明は上記した問題点を解決するためになされ友も
のであり、その目的は比較的簡単な方法によりセラミッ
クス基材から成る円筒形状の外周面に電導性良好な微細
導体層パターン形成方法とその装置を提供するにある。This invention was made to solve the above-mentioned problems, and its purpose is to provide a method for forming a fine conductive layer pattern with good conductivity on the outer peripheral surface of a cylindrical ceramic base material by a relatively simple method. We are in the process of providing equipment.
この発明に係るセラミックス基材から成る円筒の外周面
に微細導体層パターンの形成方法とその装置は鋭意検討
を重ねた結果、セラミックス基材から成る円筒形状の物
品を常法により脱脂後、非印刷部と印刷部分とから成る
印刷パターンが形成されている半円状のシルクスクリー
ン制版を上記セラミックス基材から成る円筒表面上の微
細導体層パターンが所要な部分に接触させ、銀、金、パ
ラジウム、銅等の導電性ペーストを塗布させるのである
。上記一連のプロセスが完了後、他方の手内部分も同様
に塗布した後に、導体層に最適な温度で焼結することを
特徴としたものである。As a result of extensive research, the method and apparatus for forming a fine conductor layer pattern on the outer peripheral surface of a cylinder made of a ceramic base material according to the present invention have been developed. A semicircular silk screen printing plate, on which a printed pattern consisting of a part and a printed part is formed, is brought into contact with the desired part of the fine conductor layer pattern on the cylindrical surface made of the ceramic base material, and silver, gold, palladium, A conductive paste such as copper is applied. After completing the series of processes described above, the other inner part is similarly coated, and then sintered at a temperature optimal for the conductor layer.
この発明においては、従来円筒形状の円周面に微細導体
層の形成が不可能でめったのを可能とし。The present invention makes it possible to form a fine conductor layer on the circumferential surface of a cylindrical shape, which has been impossible in the past.
しかも品質的安定し九製造ができる。Furthermore, the quality is stable and nine production runs are possible.
又、良好な磁気伝導性を得ることができる。Moreover, good magnetic conductivity can be obtained.
以下において実施例を掲げこの発明を更に詳しく説明す
る。The present invention will be explained in more detail below with reference to Examples.
第１図（イ）〜（ホ）はこの発明による微細導体層パタ
ーンの形成工程を示す図、第２図はこの発明によって得
られ念加工品の断面を示す図である。図において、（１
）は円筒形状のセラミックスＸ材、＋２）ｄシルクスク
リ一ン版、（３）は微細導体層パターンでるる。FIGS. 1(A) to 1(E) are diagrams showing the process of forming a fine conductor layer pattern according to the present invention, and FIG. 2 is a diagram showing a cross section of a finely processed product obtained according to the present invention. In the figure, (1
) is a cylindrical ceramic X material, +2) is a silk screen plate, and (3) is a fine conductor layer pattern.
円筒形状のセラミックス素材（１）は洗浄（ロ）され。The cylindrical ceramic material (1) is cleaned (b).
次に素材＋１１の外周面に半円状のシルクスクリーン版
（２）を所定の位置に接触させ、銀、金、パラジウム、
銅等のいずれかの導電性ペーストをシルクスクリーン版
＋２）上Ｋｍ布するのである。Next, a semicircular silk screen plate (2) is brought into contact with the outer peripheral surface of the material +11 at a predetermined position, and silver, gold, palladium,
A conductive paste such as copper is applied over a silk screen plate + 2 km.
第３図は微細導体層パターンの形成装置の一例を示すも
のであ９２図に訃いて（４）は枠、１５）は印Ｊｔｉｌ
Ｊ部、 ＋６＋Ｉｌ′ｉ非印刷部である。Figure 3 shows an example of an apparatus for forming a fine conductor layer pattern.
J section, +6+Il'i non-printing section.
上記の微細導体層パターンの形成工程で塗布され念導電
ペーストは印刷部＋５１を経由して素材ｔｌＪの表面上
に塗布され、非印刷部（６１に塗布された導電性ペース
トはシルクスクリーン版（２）上に残留するこのように
して微細導体層パターンが形成されるので、所要の温度
で焼付・焼結に）すれば完全品（ホ）が得られるのであ
る。The conductive paste applied in the above-mentioned process of forming the fine conductor layer pattern is applied to the surface of the material tlJ via the printing section +51, and the conductive paste applied to the non-printing section (61) is applied to the silk screen plate (2). In this way, a fine conductor layer pattern is formed which remains on the surface of the conductor layer (), so that a complete product (e) can be obtained by baking and sintering it at the required temperature ().
第３図において、枠（４）はシルクスクリーン版（２）
の張りをよくするためのものである。In Figure 3, the frame (4) is the silk screen plate (2)
This is to improve the tension.
以上説明したように、この発明によれば長年待望されて
いた円筒形状をした物品にも再現性よくしかも導電性の
よい微細導体層パターンが得られ。As explained above, according to the present invention, a fine conductor layer pattern with good reproducibility and good conductivity can be obtained even in cylindrical articles, which has been desired for many years.
今後広範に使用されると確信するものである。We are confident that it will be widely used in the future.
【図面の簡単な説明】
第１図はこの発明による微細導体層パターンの形成工程
の一例を示す図、第２図はこの発明によって得られ念加
工品の断面を示す図、第３図はこの発明による微細導体
層パターンを形成する装置の一例を示す図である。
図中、（１）は素材、（２）はシルクスクリーン版、（
３）は微細導体層パターン、（４）は枠、（５）は印刷
部、（６１は非印刷部である。
なお図中、同一あるいは相当部分には同一符号を付して
示しである。[Brief Description of the Drawings] Fig. 1 is a diagram showing an example of the process of forming a fine conductor layer pattern according to the present invention, Fig. 2 is a diagram showing a cross section of a finely processed product obtained by the present invention, and Fig. 3 is a diagram showing an example of the process of forming a fine conductor layer pattern according to the present invention. FIG. 1 is a diagram showing an example of an apparatus for forming a fine conductor layer pattern according to the invention. In the figure, (1) is the material, (2) is the silk screen plate, (
3) is a fine conductor layer pattern, (4) is a frame, (5) is a printed part, and (61 is a non-printed part. In the figures, the same or corresponding parts are indicated by the same reference numerals.
Claims (2)
面にスクリン製版法により、銀、金、パラジウム、銅等
の導電性ペーストを塗布し、電子回路を形成した後、上
記導電性ペーストの焼結最適温度で焼付ける上記一連の
プロセスを特徴とする微細導体層パターンの形成方法。(1) A conductive paste of silver, gold, palladium, copper, etc. is applied to the outer circumferential surface of a cylinder made of a ceramic base material of a desired shape by screen printing method, an electronic circuit is formed, and then the conductive paste is sintered. A method for forming a fine conductor layer pattern characterized by the above-mentioned series of processes of baking at an optimum temperature.
成されているシルクスクリーンと、上記シルクスクリー
ンを半円状に張るための枠とを特徴とする微細導体層パ
ターンの形成装置。(2) A device for forming a fine conductor layer pattern, comprising a silk screen on which a printed pattern consisting of a non-printed part and a printed part is formed, and a frame for stretching the silk screen in a semicircular shape.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9258186A JPS62248289A (en) | 1986-04-22 | 1986-04-22 | Method and apparatus for forming fine conductor layer pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9258186A JPS62248289A (en) | 1986-04-22 | 1986-04-22 | Method and apparatus for forming fine conductor layer pattern |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62248289A true JPS62248289A (en) | 1987-10-29 |
Family
ID=14058394
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9258186A Pending JPS62248289A (en) | 1986-04-22 | 1986-04-22 | Method and apparatus for forming fine conductor layer pattern |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62248289A (en) |
-
1986
- 1986-04-22 JP JP9258186A patent/JPS62248289A/en active Pending
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