JPS62247094A - Silver plating solution for high-speed electroplating - Google Patents
Silver plating solution for high-speed electroplatingInfo
- Publication number
- JPS62247094A JPS62247094A JP8871386A JP8871386A JPS62247094A JP S62247094 A JPS62247094 A JP S62247094A JP 8871386 A JP8871386 A JP 8871386A JP 8871386 A JP8871386 A JP 8871386A JP S62247094 A JPS62247094 A JP S62247094A
- Authority
- JP
- Japan
- Prior art keywords
- plating
- silver
- cyanide
- plating solution
- alkali metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000007747 plating Methods 0.000 title claims abstract description 79
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 title claims abstract description 35
- 229910052709 silver Inorganic materials 0.000 title claims abstract description 35
- 239000004332 silver Substances 0.000 title claims abstract description 35
- 238000009713 electroplating Methods 0.000 title 1
- 239000000654 additive Substances 0.000 claims abstract description 20
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 claims abstract description 14
- JPJALAQPGMAKDF-UHFFFAOYSA-N selenium dioxide Chemical compound O=[Se]=O JPJALAQPGMAKDF-UHFFFAOYSA-N 0.000 claims abstract description 14
- 230000000996 additive effect Effects 0.000 claims abstract description 11
- LFAGQMCIGQNPJG-UHFFFAOYSA-N silver cyanide Chemical compound [Ag+].N#[C-] LFAGQMCIGQNPJG-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229940098221 silver cyanide Drugs 0.000 claims abstract description 11
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 10
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052711 selenium Inorganic materials 0.000 claims abstract description 8
- 239000011669 selenium Substances 0.000 claims abstract description 8
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical compound N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 claims abstract 4
- 229910052783 alkali metal Inorganic materials 0.000 claims description 8
- -1 alkali metal cyanide Chemical class 0.000 claims description 7
- 229910000288 alkali metal carbonate Inorganic materials 0.000 claims description 5
- 150000008041 alkali metal carbonates Chemical class 0.000 claims description 5
- 150000008044 alkali metal hydroxides Chemical class 0.000 claims description 4
- 125000004432 carbon atom Chemical group C* 0.000 claims description 4
- 150000001340 alkali metals Chemical class 0.000 claims 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 abstract description 2
- 239000003513 alkali Substances 0.000 abstract 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 abstract 1
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 description 13
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 10
- 239000007788 liquid Substances 0.000 description 9
- NNFCIKHAZHQZJG-UHFFFAOYSA-N potassium cyanide Chemical compound [K+].N#[C-] NNFCIKHAZHQZJG-UHFFFAOYSA-N 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- 238000002845 discoloration Methods 0.000 description 6
- 235000019441 ethanol Nutrition 0.000 description 5
- 229910000027 potassium carbonate Inorganic materials 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- 239000004094 surface-active agent Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- KXZJHVJKXJLBKO-UHFFFAOYSA-N chembl1408157 Chemical compound N=1C2=CC=CC=C2C(C(=O)O)=CC=1C1=CC=C(O)C=C1 KXZJHVJKXJLBKO-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005238 degreasing Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- ZOOODBUHSVUZEM-UHFFFAOYSA-N ethoxymethanedithioic acid Chemical compound CCOC(S)=S ZOOODBUHSVUZEM-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910000029 sodium carbonate Inorganic materials 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- RNGFNLJMTFPHBS-UHFFFAOYSA-L dipotassium;selenite Chemical compound [K+].[K+].[O-][Se]([O-])=O RNGFNLJMTFPHBS-UHFFFAOYSA-L 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
Landscapes
- Electroplating And Plating Baths Therefor (AREA)
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野]
本発明は電解銀めっきを高電流密度、かつ高速で行なっ
ても平滑で光沢のある仕上り面をうることができる高速
電解銀めっき液に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a high-speed electrolytic silver plating solution that can provide a smooth and glossy finished surface even when electrolytic silver plating is performed at high current density and high speed.
[従来の技術]
従来、ワイヤーボンディング、ロウ付けおよびはんだ付
けを目的とした半導体電子部品、たとえばトランジスタ
ーヘッダー、リードフレーム、基板などへの銀めっきは
、シアン化銀とシアン化カリウムをベースとしたシアン
タイプの銀めっき液を用いてラック方式、バレル方式あ
るいは部分めっき方式などによりめっきされている。[Prior Art] Conventionally, silver plating for semiconductor electronic components such as transistor headers, lead frames, and substrates for the purpose of wire bonding, brazing, and soldering has been carried out using cyan-type silver plating based on silver cyanide and potassium cyanide. Plating is performed using a silver plating solution using the rack method, barrel method, or partial plating method.
これらの銀めっき液は、シアン化銀25〜50g/fJ
とシアン化カリウム30〜Boa/jと炭酸ナトリウム
または炭酸カリウム10〜5h/jとを含むものであり
、電流密度はラック方式およびバレル方式では0゜1〜
G、5A/ds2 、部分めっき方式では2〜3A/d
1程度で操作されている。またラック方式およびバレル
方式ではめつきに要する時間を短くするために、これら
の銀めっき液に、界面活性剤、エチルキサントゲン酸塩
、亜セレン酸カリウムを加え0.5〜2.OA/dm2
程度の電流密度により平滑めっきを行なっているばあい
もある。These silver plating solutions contain 25 to 50 g/fJ of silver cyanide.
It contains potassium cyanide 30~Boa/j and sodium carbonate or potassium carbonate 10~5h/j, and the current density is 0°1~1 for rack method and barrel method.
G, 5A/ds2, 2-3A/d for partial plating method
It is operated at about 1. In addition, in order to shorten the time required for plating in the rack method and barrel method, a surfactant, ethyl xanthate, and potassium selenite are added to these silver plating solutions by 0.5 to 2. OA/dm2
In some cases, smooth plating is performed using a current density of about 100 mL.
゛[発明が解決しようとする問題点]
従来の銀めっき液、たとえばシアン化銀が25〜50(
J/1程度含まれている銀めっき液を用いて、電流密度
0.5A/dm2でめっき厚5項の無光沢銀めっきを施
すばあい、めっきに要する時間は理論時間で約20分で
ある。そこでこの時間を短くするため、銀濃度を80〜
120o/ 41程度まで上げてめっきを施すことも試
みられているが、このばあい、液の持ち出しロスが大き
くなるとともに、つきまわり性も劣るという欠点が生じ
る。また界面活性剤やエチルキサントゲン酸を添加した
銀めっき液は、めっき速度は大きくなるが、界面活性剤
のため液が発泡性となり、さらにめっき液の濃度、電流
密度などをめっき作業中に正確に管理しなければ仕上リ
ムラなどが発生しやすいという欠点がある。[Problems to be Solved by the Invention] Conventional silver plating solutions, for example, silver cyanide, are
When performing matte silver plating with a plating thickness of 5 at a current density of 0.5 A/dm2 using a silver plating solution containing approximately J/1, the theoretical time required for plating is approximately 20 minutes. . Therefore, in order to shorten this time, the silver concentration was set to 80~
Attempts have been made to perform plating at temperatures as high as 120o/41, but in this case, there are drawbacks such as increased loss of liquid and poor throwing power. In addition, silver plating solutions containing surfactants and ethylxanthate increase the plating speed, but the surfactants make the solution foamy, and the concentration and current density of the plating solution must be precisely controlled during the plating process. It has the disadvantage that if it is not managed, it tends to cause unevenness in the finish.
[問題点を解決するための手段]
本発明は、上記のような問題点を解消するためになされ
たもので、たとえば厚さ5虜の銀めっきをラック方式で
施すばあい、銀濃度が30111/Jl程度でも4.0
〜5. OA/dm2程度の高電流密度でめっきが可能
で、めっきに要する時間が約2.5分と短く、しかもめ
つき工程において液発泡性の少ないめっき液を用い、し
かもめりきムラおよびつきまわり性が改良されためつき
液をうることを目的とするもので、シアン化銀とシアン
化アルカリ金属と炭酸アルカリ金属または水酸化アルカ
リ金属とからなる銀めっき液に、二酸化セレンとアセチ
ルアセトンとを反応させたものに、炭素数が1〜3のア
ルコールおよびシアン化アルカリ金属を加えてなる添加
剤を、めっき液中のセレン濃度が0.1〜5、 Opp
lmとなるように添加してなる高速電解銀めっき液に関
する。[Means for Solving the Problems] The present invention has been made to solve the above-mentioned problems. For example, when silver plating with a thickness of 5 mm is applied using the rack method, the silver concentration is 30111. /Jl level is 4.0
~5. Plating is possible at a high current density of approximately OA/dm2, the time required for plating is as short as approximately 2.5 minutes, and a plating solution with low foaming property is used in the plating process, and it is possible to reduce unevenness in plating and reduce throwing power. The purpose is to obtain a plating solution with improved plating solution, in which selenium dioxide and acetylacetone are reacted with a silver plating solution consisting of silver cyanide, alkali metal cyanide, alkali metal carbonate, or alkali metal hydroxide. Additives made by adding an alcohol having 1 to 3 carbon atoms and an alkali metal cyanide to a plating solution with a selenium concentration of 0.1 to 5, Opp
1m.
[作用および実施例]
本発明の高速電解銀めっき液に使用しうる添加剤以外の
各種成分は、従来より電解銀めっき液に用いられている
ものであればいずれのものであってもよく、通常のシア
ン化銀、シアン化カリウムやシアン化ナトリウムなどの
シアン化アルカリ金属、炭酸カリウムや炭酸ナトリウム
などの炭酸アルカリ金属、水酸化カリウムや水酸化ナト
リウムなとの水酸化アルカリ金属であればよい。[Function and Examples] Various components other than additives that can be used in the high-speed electrolytic silver plating solution of the present invention may be any of those conventionally used in electrolytic silver plating solutions. Any conventional alkali metal cyanide such as silver cyanide, potassium cyanide or sodium cyanide, alkali metal carbonate such as potassium carbonate or sodium carbonate, or alkali metal hydroxide such as potassium hydroxide or sodium hydroxide may be used.
前記シアン化銀の該めっき液中の濃度はAQとして20
〜500/41の範囲であるのが好ましい。該濃度が2
0o/j未満のばあいには、高電流密度がとりにくく、
高電流密度にしたばあいにはめつきヤケが生じやすく、
また50o/jをこえると技術的にとくに問題はないが
、銀のロスが大きくなりやすい。The concentration of the silver cyanide in the plating solution is 20 as AQ.
The range is preferably 500/41. The concentration is 2
If it is less than 0o/j, it is difficult to obtain a high current density;
If you use a high current density, it is easy to get burnt due to plating,
Moreover, if it exceeds 50 o/j, there is no particular technical problem, but silver loss tends to increase.
また、前記シアン化アルカリ金属の該めっき液中の濃度
は50〜10G!;l/Jの範囲であるのが好ましい。Moreover, the concentration of the alkali metal cyanide in the plating solution is 50 to 10G! ; l/J is preferable.
該濃度が50a/fl未渦のばあいにはつきまわり性が
わるくなりやすい。If the concentration is 50a/fl without swirling, the throwing power tends to be poor.
さらに、前記炭酸アルカリ金属の該めっき液中の濃度は
10〜5h/jの範囲であるのが好ましい。Further, the concentration of the alkali metal carbonate in the plating solution is preferably in the range of 10 to 5 h/j.
該濃度が1h/j未満のばあいには、液中型導度がやや
低くなりやすく、また50a/1をこえると液温が15
℃以下で炭酸塩の結晶が液中にできやすくなる。If the concentration is less than 1 h/j, the submerged conductivity tends to be a little low, and if it exceeds 50 a/1, the liquid temperature will drop to 15
Carbonate crystals tend to form in the liquid below ℃.
前記炭酸アルカリ金属のかわりに水酸化アルカリ金属を
用いるばあいの濃度も10〜50Q/flの範囲である
のが好ましい。When an alkali metal hydroxide is used instead of the alkali metal carbonate, the concentration is also preferably in the range of 10 to 50 Q/fl.
本発明の高速電解銀めっき液にはまた以下の方法で製造
される添加剤が添加される。すなわち、二酸化セレン1
モルにアセチルアセトン1〜1.2モルを加えて50〜
65℃、好ましくは約60℃で10〜15分間フタ付フ
ラスコ中で攪拌しつつ反応させ、ついでメチルアルコー
ル、エチルアルコール、イソプロピルアルコールなどの
炭素数1〜3のアルコールを加えたのち、要すれば水で
希釈し、さらにこれにシアン化カリウム、シアン化ナト
リウムなどのシアン化アルカリ金属を溶解せしめたのち
10℃程度で1時間程度加熱し、要すれば活性炭を加え
たのち濾過することによって、該添加剤をうることがで
きる。えられる添加剤の濃度などにはとくに限定はない
。Additives produced by the following method are also added to the high speed electrolytic silver plating solution of the present invention. That is, selenium dioxide 1
Add 1 to 1.2 moles of acetylacetone to the mole to make 50 to
The reaction is carried out at 65°C, preferably about 60°C, with stirring for 10 to 15 minutes in a flask with a lid, and then an alcohol having 1 to 3 carbon atoms such as methyl alcohol, ethyl alcohol, or isopropyl alcohol is added, and if necessary, The additive is diluted with water, further dissolved with alkali metal cyanide such as potassium cyanide and sodium cyanide, heated at about 10°C for about 1 hour, added activated carbon if necessary, and filtered. can be obtained. There are no particular limitations on the concentration of additives that can be obtained.
該添加剤はめつき液中でセレン濃度が0.1〜s、 o
pp−となるように添加される。セレン濃度が0、lp
pm未満になると、平滑性が出にくく、高電流密度でめ
っきするとめつきヤケが生じやすくなり、また、5.O
pp■をこえると平滑性は変らないが一部析出銀の硬度
が増すことがある。The additive has a selenium concentration of 0.1 to s, o in the plating solution.
It is added so that it becomes pp-. Selenium concentration is 0, lp
When it is less than pm, it is difficult to obtain smoothness, and plating with high current density tends to cause plating and discoloration, and 5. O
If it exceeds pp■, the smoothness will not change, but the hardness of some of the precipitated silver may increase.
めっき液中のセレン濃度が0.1〜5.0pplとなる
ように該添加剤が添加されると、通常添加剤がコロイド
状となり、めっき面に付着する。このコロイド状物が電
解析出銀の結晶を小さくし、平滑半光沢の面の形成に有
効に作用するとともに、高電流密度による電解において
も水素ガスの発生によるヤケの発生を少なくし、平滑性
が保持される。When the additive is added so that the selenium concentration in the plating solution is 0.1 to 5.0 ppl, the additive usually becomes a colloid and adheres to the plating surface. This colloidal material reduces the crystal size of electrolytic deposited silver, effectively forming a smooth, semi-glossy surface, and also reduces the occurrence of discoloration due to the generation of hydrogen gas even during electrolysis with high current density, resulting in a smooth and smooth surface. is retained.
これらの効果は微量な添加量ながら該添加剤が、めっき
面へ効率よく付着するためであろうと考えられている。It is thought that these effects are due to the fact that the additive, although added in a small amount, efficiently adheres to the plated surface.
本発明の高速電解銀めっき液を用いて銀めっきを施すば
あい、好ましい電流密度の範囲はラック方式のばあい0
.1〜4.5A/dm2 、なかんづく2〜3^/ d
s2である。電流密度が4.5A/ds2をこえると添
加剤を添加してもやはりめつきヤケが生じやすい。When silver plating is performed using the high-speed electrolytic silver plating solution of the present invention, the preferred current density range is 0 in the case of a rack method.
.. 1~4.5A/dm2, especially 2~3^/d
It is s2. If the current density exceeds 4.5 A/ds2, plating and discoloration are likely to occur even if additives are added.
また、好ましいめっき液の液温は20〜50℃である。Further, the preferred temperature of the plating solution is 20 to 50°C.
液温が20℃未満のばあい高電流密度がとりにくくめっ
きヤケが生じやすく、また50℃をこえると液の蒸発が
大きく、液濃度が変化しやすくなる。If the liquid temperature is less than 20°C, it is difficult to maintain a high current density, and plating discoloration is likely to occur.If it exceeds 50°C, evaporation of the liquid is large and the liquid concentration is likely to change.
つぎに本発明の高速電解銀めっき液を実験例、実施例お
よび比較例をあげてさらに詳細に説明するが、本発明は
かかる実験例および実施例のみに限定されるものではな
い。Next, the high-speed electrolytic silver plating solution of the present invention will be explained in more detail by giving experimental examples, working examples, and comparative examples, but the present invention is not limited only to these experimental examples and working examples.
実験例1(添加剤の合成)
二酸化セレン2gに分析用アセチルアセトン25dを加
え60℃で10分間、フタ付フラスコ中で攪拌しながら
反応させ、ついでエチルアルコール15M1を加えたの
ち、水で希釈して2fJとした。これにシアン化カリウ
ム2gを溶解せしめたのち70℃で1時間加熱し、活性
炭3〜5Qを加えてから濾過し、添加剤1900M1を
えた。Experimental Example 1 (Synthesis of additives) 25 d of acetylacetone for analysis was added to 2 g of selenium dioxide, and the mixture was reacted at 60°C for 10 minutes with stirring in a flask with a lid. Next, 15 M1 of ethyl alcohol was added, and the mixture was diluted with water. It was set to 2fJ. After 2 g of potassium cyanide was dissolved in this, it was heated at 70°C for 1 hour, and after adding activated carbon 3 to 5Q, it was filtered to obtain 1900 M1 of additive.
実施例1〜2および比較例1〜2
八〇として30o/jとなるように秤量したシアン化銀
、シアン化カリウム800/jおよび炭酸カリウム10
a/1を用いてめっき液をXII製し、さらに実験例1
でえた添加剤を第1表に示すように添加し本発明のめつ
き液21をII製した。Examples 1-2 and Comparative Examples 1-2 Silver cyanide, potassium cyanide 800/j and potassium carbonate 10 weighed to give 30 o/j as 80
A plating solution was prepared using A/1, and further Experimental Example 1
The resulting additives were added as shown in Table 1 to prepare plating solution 21 of the present invention.
つぎに、テストピースとして長さ5cm 、幅5cm、
厚さ0.5−腸の銅板を脱脂して銀ストライクめっきを
施したのち、2jビーカー中でラックに固定し、電流密
度4A/dm2 、液!!35℃で3分間めっきした。Next, as a test piece, length 5cm, width 5cm,
Thickness 0.5 - After degreasing the copper plate and applying silver strike plating, it was fixed on a rack in a 2J beaker, and the current density was 4A/dm2, and the liquid! ! Plating was carried out at 35°C for 3 minutes.
なお、7ノードおよびカソードは同寸法の銀板であフた
。Note that the 7 nodes and the cathode were covered with silver plates of the same size.
めっき中のカソードでの気泡の発生およびめっきを施し
たテストピースの外観を観察した。そのさらに実施例1
および2のめつき析出物の品質を詳細に検討したところ
、めっき厚7.0〜1.6−1銀の純度99.99%、
直径25ρの金線を用いたワイヤーボンデングは良好、
つきまわり性は良好(攪拌時)さらに空気中500℃で
1分間加熱してもフクレや変色がないという優れた品質
のものであった。The generation of air bubbles at the cathode during plating and the appearance of the plated test piece were observed. Furthermore, Example 1
A detailed study of the quality of the plating deposits in 2 and 2 revealed that the plating thickness was 7.0 to 1.6-1, the purity of silver was 99.99%,
Wire bonding using gold wire with a diameter of 25ρ is good.
The product had good throwing power (during stirring) and was of excellent quality with no blistering or discoloration even when heated in air at 500° C. for 1 minute.
実施例3〜4および比較例3
Agとして2Qa/jとなるように秤量したシアン化銀
、シアン化カリウム50a/flおよび炭酸カリウム1
0Q/fJを用いてめっき液を調製し、さらに実験例1
でえた添加剤を第2表に示すように添加し本発明のめつ
き液2jを調製した。Examples 3 to 4 and Comparative Example 3 Silver cyanide, potassium cyanide 50a/fl, and potassium carbonate 1 weighed to give 2Qa/j as Ag
A plating solution was prepared using 0Q/fJ, and further Experimental Example 1
The resulting additives were added as shown in Table 2 to prepare plating solution 2j of the present invention.
つぎにテストピースとして長さ15+e+e、直径1■
■の銀リード線約1000本を脱脂したのち、電流密度
2A/dm2 、液温30℃で10分開式レルめっきを
施した。Next, as a test piece, length 15+e+e, diameter 1■
After degreasing about 1,000 silver lead wires (2), open type plating was applied for 10 minutes at a current density of 2 A/dm2 and a liquid temperature of 30°C.
めっき中のカソードでの気泡の発生およびめっきを施し
たテストピースの外観を観察した。その結果を第2表に
併記する。The generation of air bubbles at the cathode during plating and the appearance of the plated test piece were observed. The results are also listed in Table 2.
さらに実施例3.4および比較例3で銀めっきを施した
テストピースの品質を詳細に検討したところ、実施例3
および4のテストピースは直径25虜の金線を熱圧着す
るワイヤーポンディングに極めて良好に対応するもので
ハガレも全くなく、ざらに450℃で1分間加熱しても
変色しなかったが、比較例3のテストピースは前記ワイ
ヤーポンディングが全くできず、また450℃で1分間
加熱すると変色した。Furthermore, when we examined the quality of the silver-plated test pieces in Example 3.4 and Comparative Example 3 in detail, we found that Example 3.
Test pieces 4 and 4 corresponded extremely well to wire bonding, in which gold wire with a diameter of 25 cm was bonded by heat, and there was no peeling at all, and there was no discoloration even when heated at roughly 450°C for 1 minute. The test piece of Example 3 did not undergo the wire bonding at all, and changed color when heated at 450° C. for 1 minute.
実施例5〜6および比較例4
AQとして30o/jとなるように秤量したシアン化銀
、シアン化カリウム60111/jおよび炭酸カリウム
10Q/1を用いてめっき液を調製し、さらに実験例1
でえた添加剤を第3表に示すように添加し本発明のめつ
き液21を調製した。Examples 5 to 6 and Comparative Example 4 A plating solution was prepared using silver cyanide, potassium cyanide 60111/j, and potassium carbonate 10Q/1, which were weighed so that the AQ was 30 o/j, and further Experimental Example 1
The resulting additives were added as shown in Table 3 to prepare plating solution 21 of the present invention.
つぎにテストピースとして銅板を脱脂して銀ストライク
めっきを施したのち、ジェットノズル方式によりジェッ
トの吹き付は速度10−7秒、電子密度40A/d12
、液温35℃で15秒間釦−×5−■の部分めっきを
施した。Next, a copper plate was degreased and silver strike plated as a test piece, and then the jet was sprayed using a jet nozzle at a speed of 10-7 seconds and an electron density of 40A/d12.
, partial plating of buttons -x5-■ was performed at a liquid temperature of 35°C for 15 seconds.
めっきを施したテストピースの外観を観察した。The appearance of the plated test piece was observed.
その結果を第3表に併記する。The results are also listed in Table 3.
第 3 表
さらに実施例5.6および比較例4で銀めっきを施した
テストピースの品質を詳細に検討したところ、実施例5
および6のテストピースは金線(25ρ)の熱圧着を行
なったりはんだでシリコンチップを溶着しても良好な結
果を与えるもので、さらに450℃で1分間加熱しても
変色しなかったが、比較例4のテストピースはワイヤー
ボンディングおよびダイボンディングでハガレが20X
以上発生した。また450℃で1分間加熱すると変色し
た。Table 3 Further detailed examination of the quality of the silver-plated test pieces in Example 5.6 and Comparative Example 4 revealed that Example 5.
Test pieces No. 6 and 6 gave good results when thermocompression bonded with gold wire (25ρ) and silicon chips were welded with solder, and did not change color even when heated at 450°C for 1 minute. The test piece of Comparative Example 4 had 20X peeling due to wire bonding and die bonding.
More than one occurrence occurred. Further, the color changed when heated at 450° C. for 1 minute.
[発明の効果]
以上のように、本発明の高速電解銀めっき液は、二酸化
セレンとアセチルアセトンとを反応させたものに炭素数
が1〜3のアルコールおよびシアン化アルカリ金属を加
えた添加剤を、セレン濃度が0.1〜s、 oppmに
なるように添加することにより、めっき速度を従来より
4〜8倍に上げることができ、さらに該めっき液を用い
て施されためっきは表面が平滑かつ半光沢で、ワイヤー
ボンディングおよびはんだ付けに良好に対応するので半
導体電子部品の生産性の向上および歩留りの向上に大き
く寄与する。[Effects of the Invention] As described above, the high-speed electrolytic silver plating solution of the present invention contains an additive made by reacting selenium dioxide and acetylacetone with an alcohol having 1 to 3 carbon atoms and an alkali metal cyanide. By adding selenium to a concentration of 0.1 to s, oppm, the plating speed can be increased 4 to 8 times compared to conventional methods, and the surface of the plating applied using this plating solution is smooth. It is semi-glossy and corresponds well to wire bonding and soldering, so it greatly contributes to improving the productivity and yield of semiconductor electronic components.
Claims (1)
リ金属または水酸化アルカリ金属とからなる銀めっき液
に、二酸化セレンとアセチルアセトンとを反応させたも
のに、炭素数が1〜3のアルコールおよびシアン化アル
カリ金属を加えてなる添加剤を、めっき液中のセレン濃
度が0.1〜5.0ppmとなるように添加してなるこ
とを特徴とする高速電解銀めっき液。(1) Silver plating solution consisting of silver cyanide, alkali metal cyanide, alkali metal carbonate or alkali metal hydroxide is reacted with selenium dioxide and acetylacetone, alcohol with 1 to 3 carbon atoms and cyanide. 1. A high-speed electrolytic silver plating solution, characterized in that an additive containing an alkali metal is added so that the selenium concentration in the plating solution is 0.1 to 5.0 ppm.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8871386A JPS62247094A (en) | 1986-04-17 | 1986-04-17 | Silver plating solution for high-speed electroplating |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8871386A JPS62247094A (en) | 1986-04-17 | 1986-04-17 | Silver plating solution for high-speed electroplating |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS62247094A true JPS62247094A (en) | 1987-10-28 |
Family
ID=13950539
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8871386A Pending JPS62247094A (en) | 1986-04-17 | 1986-04-17 | Silver plating solution for high-speed electroplating |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS62247094A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013076127A (en) * | 2011-09-30 | 2013-04-25 | Dowa Metaltech Kk | Silver plating material and production method therefor |
CN105705680A (en) * | 2013-11-08 | 2016-06-22 | 同和金属技术有限公司 | Silver plating material and method for manufacturing same |
JP2016204719A (en) * | 2015-04-27 | 2016-12-08 | Dowaメタルテック株式会社 | Silver plated material and method for producing the same |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4948388A (en) * | 1972-08-31 | 1974-05-10 |
-
1986
- 1986-04-17 JP JP8871386A patent/JPS62247094A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4948388A (en) * | 1972-08-31 | 1974-05-10 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013076127A (en) * | 2011-09-30 | 2013-04-25 | Dowa Metaltech Kk | Silver plating material and production method therefor |
EP2749673A4 (en) * | 2011-09-30 | 2015-05-13 | Dowa Metals & Mining Co Ltd | Silver plating and production method therefor |
US9646739B2 (en) | 2011-09-30 | 2017-05-09 | Dowa Metaltech Co., Ltd. | Method for producing silver-plated product |
EP2749673B1 (en) * | 2011-09-30 | 2021-06-02 | Dowa Metaltech Co., Ltd | Silver plating and production method therefor |
CN105705680A (en) * | 2013-11-08 | 2016-06-22 | 同和金属技术有限公司 | Silver plating material and method for manufacturing same |
CN105705680B (en) * | 2013-11-08 | 2018-03-20 | 同和金属技术有限公司 | Silver coating material and its manufacture method |
JP2016204719A (en) * | 2015-04-27 | 2016-12-08 | Dowaメタルテック株式会社 | Silver plated material and method for producing the same |
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