JPS62244179A - Thin film solar battery - Google Patents
Thin film solar batteryInfo
- Publication number
- JPS62244179A JPS62244179A JP61087734A JP8773486A JPS62244179A JP S62244179 A JPS62244179 A JP S62244179A JP 61087734 A JP61087734 A JP 61087734A JP 8773486 A JP8773486 A JP 8773486A JP S62244179 A JPS62244179 A JP S62244179A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- unit
- thin film
- adjacent unit
- series
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 11
- 239000002184 metal Substances 0.000 claims abstract description 15
- 239000004065 semiconductor Substances 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 230000002265 prevention Effects 0.000 claims description 9
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract description 3
- 230000000903 blocking effect Effects 0.000 abstract 2
- 238000010586 diagram Methods 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の属する技術分野］
本発明は、例えばアモルファスシリコン（以下ａ−３ｉ
と記す）からなるｐｎ接合を有する半導体薄膜の一側に
透明電極、他側に金属電極を備えた単位が絶縁基板上に
複数個配置され、一つの単位の金属電極を隣接単位の透
明電極に順次接続することにより、光起電力素子として
働く各単位を直列接続して構成する薄膜太陽電池に関す
る。
【従来技術とその問題点】
第２図はａ−５ｉ太陽電池の構造を示し、ガラス基板１
の上に複数の透明電極２１．２２．２３．２４、複数の
基板側からｐ−１−ｎ構造を有するａ −５ｉ層領域３
１．３２．３３．３４、複数の金属電極４１．４２．４
３゜４４が積層されている。さらに、金属電極４１を透
明電極２２に、４２を２３に、４３を２４に接触させる
ことにより、図の上部に位置を合わせて記入された等価
回路に示すように、４個の光起電力素子５Ｉ、 ５２゜
５３、５４が直列接続され、透明電極２１を子端子、金
属電極４４を一端子とする太陽電池が構成される。
このような太陽電池は、暗状態においても電源として使
用するため、二次電池あるいはコンデンサを接続し、光
起電力発生時には電力供給を行うと同時に充電を行う、
しかし、光起電力を生じない暗状態に、二次電池やコン
デンサから太陽電池に電荷が流通するのを防ぐため、逆
流防止ダイオードを二次電池やコンデンサとの間に別個
に接続するものが知られている。
このような逆流防止ダイオードは、第３図のように光起
電力素子が直列、並列接続されている場合にも有効であ
る。第４図Ｔａ）、（ｂｌに示すように光起電力素子５
１．５２．５３．５４が接続された場合、一つの素子の
開放電圧をＶ６（とすると子端子７１．一端子７２から
得られる開放電圧が２ｖ０．になる、しかし何れか１個
の素子、例えば素子５３が短絡不良を起こしても端子７
１．７２から得られる開放電圧は■。。になってしまう
、しかるに第３図に示すように各枝路に１個の逆流防止
ダイオード６を挿入すると、例えば第３図（ａｌにおい
て素子５２．５３が短絡不良を起こした場合、あるいは
第３図（ｂｌにおいて素子５３が短絡になった場合にも
、端子７１．７２がら得られる開放電圧は２Ｖｏｃにな
る。
しかしこのような逆流防止ダイオード６を別個に接続す
ることは、部品点数が多くなり、小型化が難しく、コス
ト高になるという欠点があった。Technical field to which the invention pertains The present invention relates to amorphous silicon (hereinafter referred to as a-3i), for example.
A plurality of units each having a transparent electrode on one side and a metal electrode on the other side of a semiconductor thin film having a pn junction consisting of The present invention relates to a thin-film solar cell constructed by connecting units in series that act as photovoltaic elements by sequentially connecting them. [Prior art and its problems] Figure 2 shows the structure of an a-5i solar cell.
A-5i layer region 3 having a p-1-n structure with a plurality of transparent electrodes 21, 22, 23, 24 on top and a p-1-n structure from the substrate side
1.32.33.34, multiple metal electrodes 41.42.4
3°44 are laminated. Furthermore, by contacting the metal electrode 41 with the transparent electrode 22, 42 with 23, and 43 with 24, four photovoltaic elements can be formed as shown in the equivalent circuit aligned and drawn at the top of the figure. 5I, 52, 53, and 54 are connected in series to form a solar cell with the transparent electrode 21 as a child terminal and the metal electrode 44 as one terminal. These solar cells can be used as a power source even in the dark, so they are connected to a secondary battery or a capacitor, and when photovoltaic power is generated, they supply power and are simultaneously charged.
However, in order to prevent electric charge from flowing from the secondary battery or capacitor to the solar cell in a dark state where no photovoltaic force is generated, it is known that a backflow prevention diode is connected separately between the secondary battery and the capacitor. It is being Such a backflow prevention diode is also effective when photovoltaic elements are connected in series or parallel as shown in FIG. As shown in Fig. 4 Ta) and (bl), the photovoltaic element 5
1.52.53.54 are connected, the open circuit voltage of one element is V6 (If the open circuit voltage obtained from the child terminal 71.1 terminal 72 is 2v0. However, any one element, For example, even if element 53 causes a short circuit failure, terminal 7
The open circuit voltage obtained from 1.72 is ■. . However, if one backflow prevention diode 6 is inserted in each branch as shown in FIG. Even if the element 53 is short-circuited in Fig. However, it has the drawbacks of being difficult to miniaturize and high cost.
本発明は、透明電極、ｐｎ接合を有する半導体薄膜、金
属電極からなる単位のうちの一つの少なくとも一方の電
極を隣接する単位の対応する電極に接続することにより
、隣接単位を逆流防止ダイオードとして働かせて上記の
目的を達成するものである。The present invention connects at least one electrode of one of the units consisting of a transparent electrode, a semiconductor thin film having a pn junction, and a metal electrode to a corresponding electrode of an adjacent unit, thereby causing the adjacent unit to function as a backflow prevention diode. The purpose is to achieve the above objectives.
第１図は本発明の一実施例を示し、第２図、第３図と共
通の部分には同一の符号が付されている。
第２図と異なる点は、金属電極４３が透明電極２４と接
続されておらず、隣接の金属電極４４と連結されており
、これに伴ってａ−５ｔ層ｌｉｌ域３３とａ −５ｔ層
領域３４も連結されている。この結果、図の上部に位置
を合わせて記入された等価回路に示すように３個の光起
電力素子５１．５２．５３に逆流防止ダイオード６が直
列接続された状態となり、透明電極２１゜２４がそれぞ
れ子端子、一端子となる。
第５図は別の実施例を示し、この場合は、金属電極４２
が透明電極２３と接続されず、金属電極４２と４３、
ａ−ｓｔｉｓＩ域３２と３３．透明電極２３と２４が
連結されており、等価回路に示すように光起電力素子５
２と５４の間に逆流防止ダイオード６が挿入された構成
となる。
同様にして第３ｒｆ！Ｊｆａ）、（ｂｌに示すような等
価回路も１枚の基板上に形成することができる。逆流防
止ダイオード６の数と光起電力素子の数の比も任意に選
ぶことができるが、ａ −３ｉ太陽電池の場合、一つの
光起電力素子の起電力は０．５ｖ程度であり、これを逆
接続してダイオードに用いる場合の耐圧は５ｖ程度であ
る。従って安全を見ても４直列の光起電力素子に対して
一つの単位を逆流防止ダイオードとして使用すればよい
。
【発明の効果］
本発明によれば、同一基板上に直列接続される光起電力
素子を透明電極、半導体薄膜および金属電極で形成する
場合、電極の接続を変えることによるだけで逆極性セル
として内蔵することができ、ダイオードを別個に接続す
る必要がなく、二次電池、コンデンサからの電荷の逆流
あるいは一部の素子の短絡不良による開放電圧の低下も
防止される薄膜太陽電池を小型化することが可能となる
。FIG. 1 shows an embodiment of the present invention, and parts common to FIGS. 2 and 3 are given the same reference numerals. The difference from FIG. 2 is that the metal electrode 43 is not connected to the transparent electrode 24 but is connected to the adjacent metal electrode 44, and as a result, the a-5t layer lil region 33 and the a-5t layer region 34 are also connected. As a result, the backflow prevention diode 6 is connected in series to the three photovoltaic elements 51, 52, and 53, as shown in the equivalent circuit drawn in the upper part of the figure, and the transparent electrode 21, 24 are a child terminal and a single terminal, respectively. FIG. 5 shows another embodiment, in this case metal electrode 42
is not connected to the transparent electrode 23, and the metal electrodes 42 and 43,
a-stis I regions 32 and 33. Transparent electrodes 23 and 24 are connected, and as shown in the equivalent circuit, a photovoltaic element 5
A backflow prevention diode 6 is inserted between 2 and 54. Similarly, the third rf! Equivalent circuits as shown in Jfa) and (bl) can also be formed on one substrate.The ratio between the number of backflow prevention diodes 6 and the number of photovoltaic elements can be arbitrarily selected, but a - In the case of a 3i solar cell, the electromotive force of one photovoltaic element is about 0.5V, and when it is connected in reverse and used as a diode, the withstand voltage is about 5V.Therefore, for safety reasons, it is necessary to connect 4 in series. One unit for a photovoltaic element can be used as a backflow prevention diode. [Effects of the Invention] According to the present invention, photovoltaic elements connected in series on the same substrate can be connected in series with transparent electrodes, semiconductor thin films and When formed with metal electrodes, it can be built in as a reverse polarity cell simply by changing the connection of the electrodes, and there is no need to connect a diode separately. It becomes possible to miniaturize a thin film solar cell in which a drop in open circuit voltage due to short-circuiting of elements is also prevented.
第１図は本発明の一実施例を示す断面図および等価回路
図、第２図は直列接続光起電力素子からなる太陽電池の
断面図および等価回路図、第３図は逆流防止ダイオード
接続の例を示す回路図、第４図はダイオードが接続され
ない回路図、第５図は本発明の異なる実施例を示す断面
図および等価回路図である。
１ニガラス基板、２１．２２．２３．２４：透明電極、
３１、３２．３３．３４ ： ａ−５ｉＩ？ｉＳｌ＠２
，１１．４２．４３．４４ ：第３図
（ａ）（ｂ）
第４図Fig. 1 is a cross-sectional view and an equivalent circuit diagram showing an embodiment of the present invention, Fig. 2 is a cross-sectional view and an equivalent circuit diagram of a solar cell consisting of series-connected photovoltaic elements, and Fig. 3 is a cross-sectional view and an equivalent circuit diagram of a solar cell consisting of series-connected photovoltaic elements. FIG. 4 is a circuit diagram showing an example, FIG. 4 is a circuit diagram in which no diode is connected, and FIG. 5 is a cross-sectional view and an equivalent circuit diagram showing a different embodiment of the present invention. 1 glass substrate, 21.22.23.24: transparent electrode,
31, 32.33.34: a-5iI? iSl@2
, 11.42.43.44: Figure 3 (a) (b) Figure 4
Claims (1)
側に金属電極を備えた単位が絶縁基板上に複数個配置さ
れ、一つの単位の金属電極を隣接単位の透明電極に順次
接続することにより、光起電力素子として働く各単位を
直列接続してなるものにおいて、単位のうちの一つの少
なくとも一方の電極を隣接単位の対応する電極に接続す
ることにより、該隣接単位を逆流防止ダイオードとして
働かせることを特徴とする薄膜太陽電池。1) A plurality of units each having a transparent electrode on one side of a semiconductor thin film having a pn junction and a metal electrode on the other side are arranged on an insulating substrate, and the metal electrode of one unit is sequentially connected to the transparent electrode of an adjacent unit. By connecting at least one electrode of one of the units to the corresponding electrode of an adjacent unit, in a device formed by connecting units in series that act as a photovoltaic element, the adjacent unit can be connected to a backflow prevention diode. A thin film solar cell characterized by being used as a.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61087734A JPS62244179A (en) | 1986-04-16 | 1986-04-16 | Thin film solar battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61087734A JPS62244179A (en) | 1986-04-16 | 1986-04-16 | Thin film solar battery |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62244179A true JPS62244179A (en) | 1987-10-24 |
Family
ID=13923151
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61087734A Pending JPS62244179A (en) | 1986-04-16 | 1986-04-16 | Thin film solar battery |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62244179A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5155565A (en) * | 1988-02-05 | 1992-10-13 | Minnesota Mining And Manufacturing Company | Method for manufacturing an amorphous silicon thin film solar cell and Schottky diode on a common substrate |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57154880A (en) * | 1981-03-20 | 1982-09-24 | Fuji Electric Corp Res & Dev Ltd | Solar battery device |
-
1986
- 1986-04-16 JP JP61087734A patent/JPS62244179A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57154880A (en) * | 1981-03-20 | 1982-09-24 | Fuji Electric Corp Res & Dev Ltd | Solar battery device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5155565A (en) * | 1988-02-05 | 1992-10-13 | Minnesota Mining And Manufacturing Company | Method for manufacturing an amorphous silicon thin film solar cell and Schottky diode on a common substrate |
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