JPS622438B2 - - Google Patents
Info
- Publication number
- JPS622438B2 JPS622438B2 JP2755979A JP2755979A JPS622438B2 JP S622438 B2 JPS622438 B2 JP S622438B2 JP 2755979 A JP2755979 A JP 2755979A JP 2755979 A JP2755979 A JP 2755979A JP S622438 B2 JPS622438 B2 JP S622438B2
- Authority
- JP
- Japan
- Prior art keywords
- heat generating
- layer
- generating part
- sio
- heat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000005530 etching Methods 0.000 claims description 17
- 239000004020 conductor Substances 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 2
- 239000012777 electrically insulating material Substances 0.000 claims 1
- 239000003779 heat-resistant material Substances 0.000 claims 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 17
- 239000000243 solution Substances 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000007084 catalytic combustion reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
Landscapes
- Surface Heating Bodies (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Description
【発明の詳細な説明】
本発明は、上部層Ａと下部層Ｂとを有する基板
の上部層Ａの表面に発熱部Ｃとなる導電体を配し
た電熱器において、発熱部Ｃの下部領域の下部層
Ｂをアンダーカツトして空どうにし、熱伝導およ
び熱容量を小さくなるようにした構造をもつ電熱
器に関する。Detailed Description of the Invention The present invention provides an electric heater in which a conductor serving as a heat generating portion C is disposed on the surface of an upper layer A of a substrate having an upper layer A and a lower layer B. This invention relates to an electric heater having a structure in which the lower layer B is undercut to make it empty, thereby reducing heat conduction and heat capacity.
局所加熱用電熱器や自己加熱による電気抵抗変
化を利用する電熱器等において、電熱器の熱容量
を小さくして、電熱器の消費電力および熱時定数
を小さくさせるのには、小形化の必要がある。厚
い基板に密着して発熱体となる導電体を配した場
合、その基板の熱伝導により発熱部が冷却される
ため、電熱器の温度が上昇し難く、消費電力が大
きくなり、温度変化も緩慢となる。 In electric heaters for local heating and electric heaters that utilize changes in electrical resistance due to self-heating, miniaturization is necessary to reduce the heat capacity of the electric heater and reduce the power consumption and thermal time constant of the electric heater. be. When a conductor that acts as a heat generating element is placed in close contact with a thick board, the heat generating part is cooled by the heat conduction of the board, making it difficult for the temperature of the electric heater to rise, resulting in high power consumption and slow temperature changes. becomes.
従来、たとえば、熱線風速計の検出部のよう
に、発熱部から支持体への熱伝導、および発熱部
の熱容量を小さくさせるため、発熱部である導電
体の両端を固定し、途中を空中に浮かすように配
したものがあるが、導電体の機械的強度および固
定のむずかしさなどに問題があつた。このため導
電体の太さや厚みを増加させると、今度は、消費
電力や熱時定数が大きくなるという困難があつ
た。 Conventionally, for example, in the detection part of a hot wire anemometer, in order to reduce heat conduction from the heat generating part to the support and the heat capacity of the heat generating part, both ends of the conductor that is the heat generating part were fixed, and the middle part was suspended in the air. There are some that are arranged in a floating manner, but there were problems with the mechanical strength of the conductor and the difficulty of fixing it. For this reason, increasing the thickness and thickness of the conductor has the disadvantage of increasing power consumption and thermal time constant.
本発明は、かかる欠点をなくし、小形で消費電
力および熱時定数が小さく、集積可能であり、か
つ、基板上で局部的な発熱を可能にする電熱器の
構造を提供するものである。 The present invention eliminates these drawbacks, and provides a structure for an electric heater that is compact, has low power consumption and low thermal time constant, can be integrated, and can generate heat locally on a substrate.
本発明を、基板としてシリコン（Si）ウエハー
と該ウエハー上に形成されたシリコン熱酸化膜
（SiO2膜）を用い、発熱部として、PtやNi等の導
電体を用いて実施した実施例を図面にもとづいて
説明すれば次の通りである。第１図ａは、Siウエ
ハーなる下部層Ｂ上に、熱酸化により形成された
SiO2膜なる上部層Ａを有する基板を用いて実施
した本発明の電熱器の平面図である。第１図ｂ
は、第１図ａのＸ−Ｙ断面における断面図であ
る。本実施例では、耐熱性かつ電気的絶縁性に富
みＢ機械的強度も比較的強いSiO2層Ａと、エツ
チング液の異なるSi層Ｂを用いてある。Siの結晶
方向により、エツチング速度の異なるエツチング
液を用いるエツチング法、いわゆる異方性エツチ
ング法を積極的に利用し、発熱部Ｃの下部の領域
をアンダーカツトしやすくするため、Siウエハー
Ｂの表面を（111）面の選んである。製作工程を
簡単に説明する。まず、SiウエハーＢの表面を、
水蒸気ふん囲気中、1100℃で、熱時間熱酸化し、
厚み1.0μｍ程度のSiO2層Ａを成長させる。次
に、フオトレジスト・パターンを用いた公知のフ
オトエツチング法により、SiO2層Ａを、たとえ
ば、フツ化アンモニウム系エツチング液でエツチ
ングし、ついで、SiウエハーＢを、結晶方向でエ
ツチング速度が余り変わらないエツチング液であ
るシルバーグリコールエツチング液を用い、約10
μｍの深さにエツチングし、たとえば、幅15μ
ｍ、長さ500μｍ、深さ11μｍ程度の溝１を作製
する。次にSiの異方性エツチング液でありSiOは
ほとんど侵さないエチレンジアミン水溶液を用い
たエツチング液により、Siの（111）方向はほと
んどエツチングせずに溝１の両側面を積極的にエ
ツチングし、SiO2層Ａのつば２，２′をたとえば
約20μｍ程度に張り出させた状態で残し、空どう
部Ｄを作製する。次に発熱体となるべきニツケル
（Ni）白金（Pt）等の高融点導電性膜をスパツタ
リング等で、SiO2層Ａの表面にたとえば0.3μｍ
程度付着させ、フオトレジストパターンを用いた
公知のエツチング技術により第１図ａ，ｂに示す
ごとく、電極部３，３′および発熱部Ｃを形成さ
せる。以上のごとく、発熱部Ｃは、１μｍ程度の
薄いSiO2層のつば２の上に形成され、その下部
は空どう部Ｄになつているので、熱伝導が非常に
小さく、熱容量も小さいので発熱しやすく、消費
電力の小さい電熱器となる。 An example in which the present invention was implemented using a silicon (Si) wafer and a silicon thermal oxide film (SiO 2 film) formed on the wafer as the substrate, and using a conductor such as Pt or Ni as the heat generating part. The explanation will be as follows based on the drawings. Figure 1a shows a layer formed by thermal oxidation on a lower layer B, which is a Si wafer.
FIG. 2 is a plan view of an electric heater of the present invention implemented using a substrate having an upper layer A of SiO 2 film. Figure 1b
1 is a sectional view taken along the XY section of FIG. 1a. In this embodiment, a SiO 2 layer A having high heat resistance and electrical insulation properties and relatively strong mechanical strength B, and a Si layer B using a different etching solution are used. An etching method using an etching solution with different etching speed depending on the Si crystal direction, so-called anisotropic etching method, is actively used to make it easier to undercut the region below the heat generating part C. (111) planes are selected. The manufacturing process will be briefly explained. First, the surface of Si wafer B is
Thermal oxidation is carried out at 1100℃ in an atmosphere of steam,
A SiO 2 layer A having a thickness of approximately 1.0 μm is grown. Next, by a known photoetching method using a photoresist pattern, the SiO 2 layer A is etched with, for example, an ammonium fluoride-based etching solution, and then the Si wafer B is etched so that the etching rate does not vary much depending on the crystal direction. Using silver glycol etching solution, which is an etching solution without
Etched to a depth of μm, for example, a width of 15 μm.
A groove 1 having a length of 500 μm and a depth of about 11 μm is prepared. Next, using an etching solution using an ethylenediamine aqueous solution, which is an anisotropic etching solution for Si and hardly attacks SiO, both sides of groove 1 are actively etched without etching the (111) direction of Si. The flanges 2 and 2' of the two layers A are left in a state where they are protruded by, for example, about 20 μm, and a hollow part D is created. Next, a conductive film with a high melting point such as nickel (Ni) or platinum (Pt), which will become a heating element, is coated on the surface of the SiO 2 layer A with a thickness of, for example, 0.3 μm by sputtering or the like.
The electrode parts 3, 3' and the heat generating part C are formed by a known etching technique using a photoresist pattern, as shown in FIGS. 1a and 1b. As mentioned above, the heat generating part C is formed on the brim 2 of a thin SiO 2 layer of about 1 μm, and the lower part is the empty part D, so the heat conduction is very low and the heat capacity is small, so it generates heat. It is an electric heater that is easy to use and consumes little power.
第２図ａ〜ｃは、この発明を第１図ａ，ｂと同
様に、（111）面のSiウエハーＢとその上に形成し
たSiO2膜Ａの基板を用いて実施した電熱器であ
るが、発熱部Ｃが架橋状になつている場合の構造
の一例を示してある。 Figures 2 a to c show an electric heater in which the present invention was implemented using a (111)-plane Si wafer B and a SiO 2 film A substrate formed thereon, as in Figures 1 a and b. However, an example of a structure in which the heat generating portion C is cross-linked is shown.
第２図ａは、平面図で、第２図ｂとｃは、それ
ぞれ、第２図ａの−′断面と−′断面にお
ける断面図を示す。第２図ａ〜ｃにおいて、溝
４，４′とSiO2膜のつば６，６′と空どう部Ｄの
作製および、NiやPt等の導電体Ｃ，７，７′のパ
ターン化は、第１図ａ，ｂに示した構造の電熱器
と同様にして作製することができる。なお、第２
図ｂに示す発熱部Ｃの下部にあるSiO2膜の橋５
は、溝４，４′の形成後、溝４，４′の側面エツチ
ングによる空どう部Ｄの作製工程時に、溝４と溝
４′との双方からの側面エツチング（アンダーカ
ツト）により貫通させて形成される。このように
第２図ａ〜ｃの構造の電熱器においても、たとえ
ば厚さ１μｍ程度の極めて薄い橋５の上に形成さ
れた厚さ１μｍ以下の導電体から成る発熱部Ｃ
は、橋５の下部が空どうＤになつており、SiO2
膜Ａも熱伝導がしにくいので小さな消費電力で発
熱し、熱容量が小さくできる。 FIG. 2a is a plan view, and FIGS. 2b and 2c are sectional views taken along the -' and -' sections of FIG. 2a, respectively. In FIGS. 2a to 2c, the fabrication of the grooves 4, 4', the ribs 6, 6' of the SiO 2 film, and the cavity D, and the patterning of the conductors C, 7, 7' such as Ni and Pt are as follows. It can be manufactured in the same manner as the electric heater having the structure shown in FIGS. 1a and 1b. In addition, the second
SiO 2 film bridge 5 at the bottom of the heat generating part C shown in Figure b
After forming the grooves 4 and 4', during the step of fabricating the cavity D by side etching of the grooves 4 and 4', the grooves are penetrated by side etching (undercut) from both the grooves 4 and 4'. It is formed. In this way, also in the electric heaters having the structures shown in FIGS. 2a to 2c, the heat generating part C made of a conductor with a thickness of 1 μm or less is formed on the extremely thin bridge 5 with a thickness of about 1 μm, for example.
The lower part of bridge 5 is empty D, and SiO 2
Membrane A also has poor thermal conductivity, so it generates heat with low power consumption and has a small heat capacity.
本発明の基板および導電体として使用する物質
は、上記説明例の物質にのみ限定されるものでは
ない。たとえば、基板としての他の一例を示す
と、Si基板上に成長したSiO2膜を下部層Ｂとし、
その上にアルミナ膜を成長させ、これを上部層Ａ
として使用する。この場合、アルミナ膜Ａと
SiO2膜Ｂのエツチング液の違いを利用して、上
部層であるアルミナ膜Ａをマスクとして、下部層
SiO2膜Ｂをエツチングし、第１図や第２図の場
合と同様にして、空どう部Ｄを作り、かつ発熱部
もスパツタリング等で導電体を付着形成させ、電
熱器を作製する。 The materials used as the substrate and conductor of the present invention are not limited to those described above. For example, to show another example of the substrate, a SiO 2 film grown on a Si substrate is used as the lower layer B,
An alumina film is grown on top of this, and this is used as the upper layer A.
Use as. In this case, alumina film A and
Using the difference in etching solution for SiO 2 film B, the lower layer is etched using the upper layer alumina film A as a mask.
The SiO 2 film B is etched to form a cavity D in the same manner as in FIGS. 1 and 2, and a conductive material is also deposited on the heat generating part by sputtering or the like to produce an electric heater.
本発明により、局部的発熱が可能であり、熱容
量が小さく、高速応答も可能であるので、たとえ
ば、局部加熱用ヒーター、発熱による抵抗変化を
利用した熱線流速計、ピラニー直空計や接触燃焼
形ガス検出器などへの応用が期待される。 The present invention enables local heat generation, small heat capacity, and high-speed response, so it can be used, for example, with heaters for local heating, hot wire anemometers that utilize resistance changes due to heat generation, Pirani direct air meters, and catalytic combustion type meters. It is expected to be applied to gas detectors, etc.
第１図、第２図は、本発明の電熱器の実施例
で、どちらも基板の上部層ＡとしてSiO2層、下
部層ＢとしてSi層を使用している。第１図は、一
つの溝１の両側に作つたSiO2膜Ａのつば２，
２′のうち、一方のつば２上に発熱部Ｃを作製し
た場合で、第１図ａは平面図、ｂはａのＸ−Ｙ断
面側面図であり、第２図は、二つの溝４，４′を
用いて、アンダーカツトにより作製したSiO2膜
の橋５上に発熱部Ｃを作製した場合で、第２図ａ
は平面図、ｂはａの−′断面側面図、ｃはａ
の−′断面側面図である。
図面において、Ｄは空どう部、３，３′，７，
７′は電極部（NiやPt等）、２，２′，６，６′
は、つば（SiO2膜）である。
1 and 2 show examples of electric heaters of the present invention, both of which use a SiO 2 layer as the upper layer A of the substrate and a Si layer as the lower layer B. Figure 1 shows the brim 2 of SiO 2 film A formed on both sides of one groove 1.
Fig. 1a is a plan view, b is an X-Y cross-sectional side view of a, and Fig. 2 shows a case where a heat generating part C is fabricated on one of the ribs 2 of 2'. .
is a plan view, b is a -' cross-sectional side view of a, c is a
FIG. In the drawing, D is an empty space, 3, 3', 7,
7' is the electrode part (Ni, Pt, etc.), 2, 2', 6, 6'
is the brim (SiO 2 film).
Claims (1)
上部層Ａと該上部層Ａとは、異なる物質の下部層
Ｂとを含む基板を用い、上部層Ａの表面に付着形
成された導電物質を発熱部Ｃとする電熱器におい
て、発熱部Ｃの下部領域に対応する下部層Ｂの領
域を、上部層Ａを残した状態でエツチング等によ
り除去して空どう部Ｄを設け、残された上部層Ａ
上に発熱部Ｃを配することにより、発熱部Ｃと該
発熱部Ｃを支える部分の上部層Ａとが、空中に浮
く形となる構造をもつことを特徴とする電熱器。1. Using a substrate containing an upper layer A made of a heat-resistant and electrically insulating material and a lower layer B made of a different material, a conductive material deposited on the surface of the upper layer A is used. In an electric heater having a heat generating part C, a region of the lower layer B corresponding to the lower region of the heat generating part C is removed by etching or the like while leaving the upper layer A to provide a hollow part D, and the remaining upper part Layer A
An electric heater characterized by having a structure in which the heat generating part C is disposed on top, so that the heat generating part C and the upper layer A that supports the heat generating part C float in the air.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2755979A JPS55119381A (en) | 1979-03-08 | 1979-03-08 | Electric heater |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2755979A JPS55119381A (en) | 1979-03-08 | 1979-03-08 | Electric heater |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55119381A JPS55119381A (en) | 1980-09-13 |
| JPS622438B2 true JPS622438B2 (en) | 1987-01-20 |
Family
ID=12224397
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2755979A Granted JPS55119381A (en) | 1979-03-08 | 1979-03-08 | Electric heater |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55119381A (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5618750A (en) * | 1979-07-25 | 1981-02-21 | Ricoh Co Ltd | Gas detector |
| JPS5794641A (en) * | 1980-12-04 | 1982-06-12 | Ricoh Co Ltd | Manufacture of electric heater |
| US4542650A (en) * | 1983-08-26 | 1985-09-24 | Innovus | Thermal mass flow meter |
| JPH0733979B2 (en) * | 1984-07-31 | 1995-04-12 | 光照 木村 | Temperature sensor |
| WO2008038611A1 (en) * | 2006-09-28 | 2008-04-03 | National Institute Of Advanced Industrial Science And Technology | Gas conveying pump, method of forming heater, and sensor |
| JP5387842B2 (en) * | 2009-05-14 | 2014-01-15 | セイコーエプソン株式会社 | Piezoelectric device |
| US8667839B2 (en) | 2011-02-18 | 2014-03-11 | Tohoku Gakuin | Heat conduction-type sensor for calibrating effects of temperature and type of fluid, and thermal flow sensor and thermal barometric sensor using this sensor |
-
1979
- 1979-03-08 JP JP2755979A patent/JPS55119381A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55119381A (en) | 1980-09-13 |
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