JPS622412B2 - - Google Patents
Info
- Publication number
- JPS622412B2 JPS622412B2 JP11754277A JP11754277A JPS622412B2 JP S622412 B2 JPS622412 B2 JP S622412B2 JP 11754277 A JP11754277 A JP 11754277A JP 11754277 A JP11754277 A JP 11754277A JP S622412 B2 JPS622412 B2 JP S622412B2
- Authority
- JP
- Japan
- Prior art keywords
- contact structure
- contact
- pores
- conductive metal
- center
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000011148 porous material Substances 0.000 claims description 48
- 229910052751 metal Inorganic materials 0.000 claims description 41
- 239000002184 metal Substances 0.000 claims description 41
- 238000002844 melting Methods 0.000 claims description 12
- 230000008018 melting Effects 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 230000008595 infiltration Effects 0.000 claims description 5
- 238000001764 infiltration Methods 0.000 claims description 5
- 238000005304 joining Methods 0.000 claims description 3
- 150000002739 metals Chemical class 0.000 description 6
- 238000003466 welding Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- 238000005299 abrasion Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000010953 base metal Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Manufacture Of Switches (AREA)
- Contacts (AREA)
Description
【発明の詳細な説明】
本発明は焼結体を用いた接点およびその製造方
法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a contact using a sintered body and a method for manufacturing the same.
電気用接点としてタングステンなどの高融点金
属と銀などの導電性金属とを組合せた焼結体で構
成されたものが用いられており、この接点を構成
する焼結体には高融点金属と導電性金属とを混合
焼結した混合焼結体と、焼結された高融点金属に
導電性金属を溶浸させた溶浸焼結体とがある。こ
れらいずれの焼結体も両金属を一緒に結合させた
ものである。 Electrical contacts are made of a sintered body that combines a high-melting point metal such as tungsten and a conductive metal such as silver. There are two types of sintered bodies: mixed sintered bodies in which conductive metals are mixed and sintered, and infiltrated sintered bodies in which conductive metals are infiltrated into sintered high melting point metals. Both of these sintered bodies are made by bonding both metals together.
しかして、観点を変えて高融点金属（焼結体）
と導電性金属とを別体に成形して両者を接合し、
導電性金属を高融点金属へ溶浸させるようにした
もので接点を構成することが考えられる。この構
成の接点では高融点金属における導電性金属の溶
浸量を部分的に異ならせて、耐しや断性および耐
溶着性を効果的にもたせることができる利点があ
る。 However, from a different perspective, high melting point metals (sintered bodies)
and a conductive metal are formed separately and joined together,
It is conceivable that the contact be constructed by infiltrating a conductive metal into a high melting point metal. A contact having this configuration has the advantage that the amount of infiltration of the conductive metal in the high-melting point metal can be partially varied to effectively provide resistance, breakability, and welding resistance.
本発明はこのような接点に着目し、この接点を
効果的に実現させたものである。 The present invention focuses on such a contact point and effectively realizes this contact point.
本発明の接点は、高融点金属の焼結体からなる
第１の接点構体と、この第１の接点構体に接合さ
れた導電性金属からなる第２の接点構体とを具備
してなり、第１の接点構体には第２の接点構体側
に連通し且つ導電性金属が溶浸により充填された
多数の細孔を有するとともに、これら細孔は前記
第１の接点構体の中央部に形成される数（細孔密
度50〜100／mm2）に比して外周部に形成される数
（細孔密度100／mm2を超える値）を多くしたことを
特徴とするものである。 The contact of the present invention includes a first contact structure made of a sintered body of a high-melting point metal, and a second contact structure made of a conductive metal bonded to the first contact structure. The first contact structure has a large number of pores that communicate with the second contact structure and are filled with conductive metal by infiltration, and these pores are formed in the center of the first contact structure. It is characterized in that the number of pores formed on the outer periphery (pore density exceeding 100/mm 2 ) is larger than the number of pores formed on the outer periphery (pore density of 50 to 100/mm 2 ).
この接点は第１図および第２図で示すように、
相手側接点と接離する例えば円板状の第１の接点
構体１を高融点金属の焼結体で成形し、台金３と
接合する例えば円板状の第２の接点構体２を導電
性金属で成形し、且つ第１の接点構体１にはその
中央部および外周部に両側面間を貫通する多数の
細孔４……を並べて形成する。そして、第１の接
点構体１の一側面には第２の接点構体２を接合
し、細孔４……を含む第１の接点構体１に第２の
接点構体２の導電性金属を溶浸させたものであ
る。この場合、第１の接点構体１の細孔４……に
は溶浸により導電性金属が充填される。 This contact point, as shown in Figures 1 and 2,
A first contact structure 1 in the shape of a disc, for example, which comes into contact with and separates from the mating contact, is made of a sintered body of a high melting point metal, and a second contact structure 2, in the shape of a disc, for example, which is joined to the base metal 3 is made of conductive material. The first contact structure 1 is formed of metal and has a large number of pores 4 lined up in its center and outer circumferential portions, passing through both sides thereof. Then, the second contact structure 2 is joined to one side of the first contact structure 1, and the conductive metal of the second contact structure 2 is infiltrated into the first contact structure 1 including the pores 4. This is what I did. In this case, the pores 4 of the first contact structure 1 are filled with conductive metal by infiltration.
しかしてこの接点では、第１の接点構体１は焼
結体で多孔質であるから第２の接点構体２の導電
性金属を良好に溶浸できるのは勿論でああるが、
このことに加えて第１の接点構体１に形成した多
数の細孔４……を通して導電性金属が第１の接点
構体１全体に効率よく溶浸し、第１の接点構体１
の細孔４……に導電性金属が充填される。このた
め接点は、第１の接点構体１の高融点金属が有す
る耐溶着性、耐摩耗性と第２の接点構体２の導電
性金属が有する導電性、耐しや断性を併せもつこ
とができる。しかも、接点の使用に伴い導電性金
属が多数の細孔４……を通つて効率良く第１の接
点構体１に補給することもできる。特にこの接点
では、第１の接点構体１の中央部に形成する細孔
４……の数（密度50〜100／mm2）を少なくし、且
つ外周部に形成する細孔４……の数（密度100／
mm2を超える値）を多くして、第１の接点構体１の
中央部に溶浸させる導電性金属量を少なくし、外
周部に溶浸させる導電性金属量を多くしている。
このため、第１の接点構体１の中央部では第１の
接点構体１の高融点金属の耐溶着性、耐摩耗性が
得られ、外周部では第２の接点構体２の導電性金
属の耐しや断性、導電性が得られる。従つて、耐
溶着性、耐摩耗性と耐しや断性、導電性を効果的
に組合せることができる。 However, in this lever contact, since the first contact structure 1 is a sintered body and porous, it is of course possible to infiltrate the conductive metal of the second contact structure 2.
In addition to this, the conductive metal is efficiently infiltrated into the entire first contact structure 1 through the large number of pores 4 formed in the first contact structure 1.
The pores 4... are filled with a conductive metal. Therefore, the contact can have both the welding resistance and abrasion resistance of the high melting point metal of the first contact structure 1 and the conductivity, durability, and breakability of the conductive metal of the second contact structure 2. can. Moreover, as the contact is used, conductive metal can be efficiently supplied to the first contact structure 1 through the large number of pores 4 . In particular, in this contact, the number of pores 4 formed in the center of the first contact structure 1 (density 50 to 100/mm 2 ) is reduced, and the number of pores 4 formed in the outer periphery is reduced. (density 100/
mm2 ) is increased, the amount of conductive metal infiltrated into the central part of the first contact structure 1 is decreased, and the amount of conductive metal infiltrated into the outer peripheral part is increased.
Therefore, the welding resistance and abrasion resistance of the high melting point metal of the first contact structure 1 can be obtained in the central part of the first contact structure 1, and the resistance of the conductive metal of the second contact structure 2 can be obtained in the outer peripheral part. Provides insulation and electrical conductivity. Therefore, it is possible to effectively combine welding resistance, abrasion resistance, breakage resistance, and electrical conductivity.
次に本発明の接点を得るための製造方法は、第
１の接点構体の中央部および外周部に、この中央
部に形成する数（細孔密度50〜100／mm2）に比し
て外周部に形成する数（細孔密度100／mm2を超え
る値）が多くなるようにレーザを利用して多数の
細孔を形成し、この第１の接点構体と第２の接点
構体を炉中に入れて加熱することにより、両接点
構体を互に溶着させて接合し、同時に第２の接点
構体の導電性金属を細孔を含む第１の接点構体中
に溶浸させることを特徴とするものである。この
ようにして得た接点は所定の接点形状に切削加工
する。 Next, in the manufacturing method for obtaining the contact of the present invention, the number of pores formed in the center and the outer periphery of the first contact structure is smaller than the number of pores formed in the center (50 to 100/mm 2 ) in the outer periphery. A large number of pores are formed using a laser so that a large number of pores are formed in the area (pore density exceeding 100/ mm2 ), and the first contact structure and the second contact structure are placed in a furnace. The method is characterized in that both contact structures are welded and joined together by heating the contact structure, and at the same time, the conductive metal of the second contact structure is infiltrated into the first contact structure including the pores. It is something. The contact thus obtained is cut into a predetermined contact shape.
しかしてこの製造方法では、第１の接点構体に
レーザを用いて多数の細孔を容易且つ確実に形成
することができる。すなわち、レーザはスポツト
状に収束して被加工材を局部的に加熱しつつ孔明
け加工を行なうものであるから、孔径が小さな細
孔を第１の接点構体の中央部と外周部に分けた所
定スペース内に所定数個づつ形成する場合に適し
ており、特に第１の接点構体の外周部における狭
いスペース内に多数の細孔を形成するのに有効で
ある。また、炉中において両接点構体の接合と、
第２の接点構体への溶浸を同時に行なうので能率
的且つ経済的な製造が行なえる。 However, in this manufacturing method, a large number of pores can be easily and reliably formed in the first contact structure using a laser. In other words, since the laser is converged into a spot shape and performs hole drilling while locally heating the workpiece, the pores with small diameters are divided into the center and outer periphery of the first contact structure. It is suitable for forming a predetermined number of pores in a predetermined space, and is particularly effective for forming a large number of pores in a narrow space on the outer periphery of the first contact structure. In addition, joining both contact structures in the furnace,
Since the second contact structure is infiltrated at the same time, efficient and economical manufacturing can be achieved.
本発明の接点およびその製造方法を実施する場
合の好ましき態様は次の通りである。第１の接点
構体はタングステン、タングステンカーバイトな
どで成形し、第２の接点構体は銀、白金などで成
形する。第１の接点構体の厚みはレーザにより、
細孔を形成することを考慮して２〜３mmとする。
第１の接点構体は焼結体のままであつても良い
し、焼結後にプレスで圧縮させたものでも良い。
第１の接点構体の中央部に形成される細孔は孔径
10〜30μ、密度50／mm2〜100／mm2、外周部に形成
される細孔は孔径30〜50μ、密度500／mm2程度と
する。細孔を形成するために用いるレーザは固体
レーザとガスレーザがあり、固体レーザは
Y3Al5O12を利用してパルス的なレーザ波（波長
1.06μ）を得るもので金属での吸収が良好であ
り、ガスレーザはCO2、He、N2を利用して連続
したレーザ波が得られガラスやセラミツクでの吸
収が良好であり、固体レーザを使用することが好
ましい。また、細孔の形式に際しては孔径に応じ
てレーザ光線のスポツト径を設定し、且つ孔明け
に必要なエネルギも決める。 Preferred embodiments for carrying out the contact and the method for manufacturing the same of the present invention are as follows. The first contact structure is molded from tungsten, tungsten carbide, or the like, and the second contact structure is molded from silver, platinum, or the like. The thickness of the first contact structure is determined by laser.
The thickness is set to 2 to 3 mm in consideration of forming pores.
The first contact structure may be a sintered body as it is, or it may be compressed by a press after sintering.
The pore formed in the center of the first contact structure has a pore diameter of
The pores formed on the outer periphery have a diameter of 30 to 50μ and a density of about 500/mm 2 . There are two types of lasers used to form pores: solid-state lasers and gas lasers.
Using Y 3 Al 5 O 12 to generate pulsed laser waves (wavelength
1.06μ) and has good absorption in metals, while gas lasers use CO 2 , He, and N 2 to generate continuous laser waves, and have good absorption in glass and ceramics. It is preferable to use Furthermore, when determining the type of pore, the spot diameter of the laser beam is set according to the pore diameter, and the energy required for making the hole is also determined.
実施例
第１の接点構体は直径25mm、厚み２mm、タング
ステンで形成し、第２の接点構体は直径25mm、厚
み３mm、銀で形成する。第１の接点構体には固体
レーザにより中央部に孔径30μ、密度75／mm2で細
孔を形成し、外周部に孔径50μ、密度300／mm2で
細孔を形成する。そして、水素雰囲気中にて温度
1300℃、時間1hrで加熱しながら両接点構体を接
合した。このようにして得た接点は両接点構体が
確実に接合するとともに第１の接点構体（タング
ステン）には第２の接点構体（銀）が充分溶浸し
ており、接点として良好に使用できた。EXAMPLE The first contact structure is 25 mm in diameter, 2 mm thick and made of tungsten, and the second contact structure is 25 mm in diameter and 3 mm thick and made of silver. In the first contact structure, pores with a pore diameter of 30 μm and a density of 75/mm 2 are formed in the center part using a solid-state laser, and pores with a pore diameter of 50 μm and a density of 300/mm 2 are formed in the outer peripheral part. Then, the temperature was
Both contact structures were joined while heating at 1300°C for 1 hour. In the thus obtained contact, both contact structures were reliably joined, and the first contact structure (tungsten) was sufficiently infiltrated with the second contact structure (silver), so that it could be used satisfactorily as a contact.
本発明の接点およびその製造方法は以上説明し
たように、高融点金属の焼結体からなる第１の接
点構体と導電性金属からなる第２の接点構体とを
接合するとともに導電性金属を第１の接点構体に
溶浸し第１の接点構体には溶浸により導電性金属
が充填される多数の細孔を内外部分の数を異なら
せて形成したものであるから、接点として必要な
耐溶着性と耐しや断性を効果的に組合せた良好な
接点を容易に得ることができ、しかもレーザによ
り細孔を容易且つ確実に形成することができる。 As explained above, the contact of the present invention and the method for manufacturing the same include joining a first contact structure made of a sintered body of a high-melting point metal and a second contact structure made of a conductive metal, and a second contact structure made of a conductive metal. Since the first contact structure is infiltrated and the first contact structure is filled with conductive metal by infiltration, a large number of pores are formed with different numbers on the inside and outside parts, so it has the necessary welding resistance as a contact. It is possible to easily obtain a good contact point that effectively combines strength, resistance, and breakability, and furthermore, pores can be easily and reliably formed using a laser.
第１図および第２図は各々本発明における接点
の一実施例を示す斜視図および断面図である。
１……第１の接点構体、２……第２の接点構
体、３……台金、４……細孔。
FIG. 1 and FIG. 2 are a perspective view and a sectional view, respectively, showing one embodiment of a contact in the present invention. DESCRIPTION OF SYMBOLS 1... First contact structure, 2... Second contact structure, 3... Base metal, 4... Pore.
Claims (1)
と、この第１の接点構体に接合された導電性金属
からなる第２の接点構体とを具備してなり、前記
第１の接点構体には前記第２の接点構体側と連通
し且つ前記導電性金属が溶浸により充填された多
数の細孔を有するとともに、これら細孔は前記第
１の接点構体の中央部に形成される数（細孔密度
50〜100／mm2）に比して外周部に形成される数
（細孔密度100／mm2を超える値）が多いことを特徴
とする接点。 ２ 高融点金属の焼結体からなる第１の接点構体
の中央部および外周部に、この中央部に形成する
数（細孔密度50〜100／mm2）に比して外周部に形
成する数（細孔密度100／mm2を超える値）が多く
なるようにレーザの加工により多数の細孔を形成
し、この第１の接点構体と導電性金属からなる第
２の接点構体とを加熱することにより、両接点構
体を互いに接合するとともに第２の接点構体の導
電性金属を第１の接点構体に溶浸することを特徴
とする接点の製造方法。[Scope of Claims] 1. A contact structure comprising: a first contact structure made of a sintered body of a high melting point metal; and a second contact structure made of a conductive metal bonded to the first contact structure; The first contact structure has a large number of pores communicating with the second contact structure and filled with the conductive metal by infiltration, and these pores are located at the center of the first contact structure. The number of pores formed in the part (pore density
50 to 100/mm 2 ), the number of contacts formed on the outer periphery is larger (pore density exceeding 100/mm 2 ). 2 Formed in the center and outer circumference of the first contact structure made of a sintered body of high melting point metal, the number of pores formed in the center (pore density 50 to 100/mm 2 ) is larger than that of the outer circumference. A large number of pores are formed by laser processing so that the number of pores (pore density exceeds 100/mm 2 ) is increased, and the first contact structure and the second contact structure made of conductive metal are heated. A method of manufacturing a contact, comprising: joining both contact structures to each other, and infiltrating the first contact structure with the conductive metal of the second contact structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11754277A JPS5450960A (en) | 1977-09-30 | 1977-09-30 | Contact and method of manufacturing same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11754277A JPS5450960A (en) | 1977-09-30 | 1977-09-30 | Contact and method of manufacturing same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5450960A JPS5450960A (en) | 1979-04-21 |
| JPS622412B2 true JPS622412B2 (en) | 1987-01-20 |
Family
ID=14714366
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11754277A Granted JPS5450960A (en) | 1977-09-30 | 1977-09-30 | Contact and method of manufacturing same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5450960A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5736728A (en) * | 1980-08-13 | 1982-02-27 | Tokyo Shibaura Electric Co | DENKISETSUTENOYOBISONOSEIZOHOHO |
| JPS5917519U (en) * | 1982-07-26 | 1984-02-02 | 株式会社井上ジャパックス研究所 | contact |
-
1977
- 1977-09-30 JP JP11754277A patent/JPS5450960A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5450960A (en) | 1979-04-21 |
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