JPS62234291A - Magnetic bubble memory element - Google Patents

Abstract

PURPOSE:To obtain a large action margin without vanishing a bubble at the outside of a conductor by lengthening the distance of a bit position occupied by the bubble before and after the magnetic bubble related to a switch action on a minor loop, and the edge of the conductor. CONSTITUTION:A pulse electric current flows at a stretching conductor 10 and the bubble of a bit position 21 of a minor loop 2 is extended by the generating magnetic field. When the bubble is extended to the division between the position 21 and a bit position 31 of a major line 1, a stretching pulse is turned off. Immediately after it, the pulse electric current flows at a cutting conductor 11, and the bubble is divided and the bubble is reproduced to the position 31. By a stretching pulse electric current during the action, the magnetic field is generated in the direction to vanish the bubble occurs at the outside of the conductor 11, and therefore, the distance of bit positions 20 and 22 before and after the position 21 and an edge 41 of the conductor 11 is made >=3mum, the bad influence of the magnetic field is decreased and an action margin is enlarged.

Description

DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a switch function used in a magnetic bubble memory device, and in particular to a major/minor gate.

(Prior Art) Conventionally, a magnetic bubble memory element employs a major/minor configuration, and a major line and a minor loop are connected by a transfer gate or a block replicator. As an example of a block replicator, one having a structure as shown in FIG. 4 is used. In the figure, these transfer paths are formed by ion implantation at locations other than the major line 1 and minor loop 2, resulting in a major/minor configuration. Two layers of conductors 11 and 1 between the major line and the minor loop
2 are arranged to constitute a block replicator.

To explain the principle of the block replicator, when a bubble is located at bit position 21 on minor loop 2,
A pulse current is passed through the stretch conductor 10, and the bubble is stretched by the magnetic field generated thereby. When the bubble stretches between the bit position 21 of the minor loop and the pit position 31 of the major line 1, a stretch pulse is applied, and immediately after that, a pulse current is applied to the cut conductor 11, and the generated magnetic field is used to double the bubble. Divide into. Then, one bubble remains on the minor loop, and the other bubble is duplicated at the pit position 31 of the major line, making it possible to read out the information stored in the form of bubbles on the minor loop without destroying it. I can do it.

(Problem to be Solved by the Invention) However, when a stretch pulse is applied, a magnetic field is generated outside the stretch conductor 10 in the direction of extinguishing the bubble, and the nobit before and after the pit position 21 of the bubble involved in the minor loop replicating operation is generated. The bubbles at positions 20 and 22 disappear, causing a reduction in the operating margin.

An object of the present invention is to provide a magnetic bubble memory device that solves this problem.

(Means for Solving the Problems) The gist of the present invention is to provide a transfer path for driving magnetic bubbles by an in-plane rotating magnetic field on a magnetic film capable of holding magnetic bubbles, and to use the transfer path to transmit information. A major line that transfers magnetic bubbles, a plurality of minor loops that store the magnetic bubbles, and further Ili
/G or a magnetic bubble switch means in which a multilayer conductor is arranged between the major line and the minor loop, the magnetic bubbles located on the minor loop before and after the magnetic bubble related to the switch operation occupy The shortest distance between the pit position and the edge of the single-layer or multi-layer conductor is increased to 311 m or more.

This magnetic bubble transfer path may be formed by arranging permalloy pieces or by ion implantation.

(Function) The magnetic field generated by the current flowing through the conductor layer is a function of the distance from the conductor, and becomes smaller as the distance from the conductor increases.

Therefore, by increasing the distance between the pit positions before and after the pit position of the bubble related to the replicate operation on the minor loop and the edge of the conductor, the influence of the magnetic field in the direction of extinguishing the bubble generated outside the conductor can be reduced. can.

(Example) Hereinafter, an example of the present invention will be described in detail with reference to the drawings.

FIG. 1 is a diagram showing an embodiment of the present invention, in which a major line 1 and a minor loop 2 formed by ion implantation are arranged in a major/minor configuration, and a stretch conductor 10 and a cut conductor 11 are arranged in between. are arranged to form bubble switch means. When the bubble is located at the pit position 21 on the minor loop, a pulse current is passed through the stretch conductor 10, and the bubble is stretched by the magnetic field generated thereby. When the bubble stretches between the pit position 21 of the minor loop and the pit position 31 of the major line, the stretch pulse is cut off, and immediately after that, a pulse current is applied to the cut conductor 11, and the generated magnetic field splits the bubble into two. To divide. Then, one bubble remains on the minor loop, and the other bubble is duplicated at the pit position 31 of the major line,
Complete the replicate operation.

When applying a stretch pulse current, the stretch conductor 10
A magnetic field is generated outside the bubble in the direction of extinguishing the bubble.

The distance between the edge 41 of the stretch conductor and the bit position 20.22 before and after the pit position 21 of the bubble involved in the replicate operation on the minor loop is Qm, and the magnetic field in the direction to extinguish the bubble at the bit position 20.22 is small. Therefore, the bubble at bit position 20.22 does not disappear, and a large operating margin is obtained.

FIG. 2 is a diagram showing the principle of the present invention. The component Hz perpendicular to the plane of the paper of the magnetic field generated when a 100 mA current is passed through a hairpin-shaped conductor with a conductor width of 3 μm and a gap width of 3 μm as shown in the figure is shown with the distance X from the conductor edge as the 4 yellow axis. This is a diagram. As is clear from the figure, Hz is
reaches a maximum at 0.8 μm, and decreases rapidly as X increases. When X is 311 m or more, Hz is about 1/3 of the maximum value, which is a size that poses no practical problem.

Therefore, in FIG. 1, it is sufficient to set the distance between the bit position 20, 22 and the conductor edge 41 to 3 μm or more.

FIG. 3 is a button diagram showing another embodiment of the present invention. In the figure, a major line 1 and a minor loop 2 formed by ion implantation have a major/minor configuration, and a gate conductor 10 is arranged between them to form a bubble switch means as a transfer gate. When a bubble is located at the pit position 21 on the minor loop, a pulse current is applied to the gate conductor 10, and the resulting magnetic field gradient can transfer the bubble to the bit position 31 on the major line.

When a transfer pulse current is applied, a magnetic field is generated above the gate conductor 10 in the direction of extinguishing the bubble.
The distance between the edge 41 of the gate conductor and the bit position 20.22 before and after the pit position 21 of the bubble involved in the transfer operation on the minor loop is 4 μm, and the distance between the bit position 20 and the edge 41 of the gate conductor is 4 μm.
The magnetic field in the direction of extinguishing the bubble at 0.22 is small. Therefore, the bubbles at pit positions 20 and 22 do not disappear, and a large operating margin can be obtained.

In the above embodiment, an ion-implanted bubble device was shown, but it is clear that the present invention is also effective for a bubble device using a permalloy transfer path.

(Effects of the Invention) As described above, the present invention reduces the adverse effects of the magnetic field generated by the current flowing through the gate conductor, and by increasing the distance between the affected bubble and the conductor edge, a large operating margin can be achieved. I was able to get it.

[Brief explanation of drawings]

Fig. 1 is a button diagram showing one embodiment of the present invention, Fig. 2 is a characteristic diagram explaining the present invention in detail, Fig. 3 is a button diagram showing another embodiment, and Fig. 4 is a conventional bubble switch. It is a button diagram showing means. In the figure, 1 is the major line, 2 is the minor loop, 10.11 is the gate conductor, 20, 21, 22 and 3
1 is a bubble pit position, and 41 is a conductor edge. Figure 1 1U stretch conductor Figure 2 × (μm) Figure 3 2 Minor loop 2 1 Major line Figure 4 10 Stretch conductor

Claims (1)

[Claims] A transfer path for driving the magnetic bubbles by an in-plane rotating magnetic field is provided on a magnetic film capable of holding magnetic bubbles, and a major line for transferring magnetic bubbles serving as information by the transfer path;
A magnetic bubble memory element comprising a plurality of minor loops for storing the magnetic bubbles, and further comprising a magnetic bubble switch means having a single-layer or multi-layer conductor arranged between the major line and the minor loop. A magnetic bubble memory element characterized in that the shortest distance between a bit position occupied by magnetic bubbles before and after a magnetic bubble on a minor loop and related to a switch operation and an edge of the single-layer or multilayer conductor is 3 μm or more.