JPS62232172A - Manufacture of substrate for photovoltaic element - Google Patents
Manufacture of substrate for photovoltaic elementInfo
- Publication number
- JPS62232172A JPS62232172A JP61074304A JP7430486A JPS62232172A JP S62232172 A JPS62232172 A JP S62232172A JP 61074304 A JP61074304 A JP 61074304A JP 7430486 A JP7430486 A JP 7430486A JP S62232172 A JPS62232172 A JP S62232172A
- Authority
- JP
- Japan
- Prior art keywords
- film
- organic insulating
- substrate
- metal substrate
- photovoltaic device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 64
- 238000004519 manufacturing process Methods 0.000 title claims description 23
- 239000002184 metal Substances 0.000 claims abstract description 33
- 229910052751 metal Inorganic materials 0.000 claims abstract description 33
- 238000000034 method Methods 0.000 claims abstract description 13
- 239000011810 insulating material Substances 0.000 claims abstract description 11
- 238000010438 heat treatment Methods 0.000 claims description 18
- 238000001035 drying Methods 0.000 claims description 15
- 229920001721 polyimide Polymers 0.000 claims description 3
- 239000009719 polyimide resin Substances 0.000 claims description 3
- 239000004734 Polyphenylene sulfide Substances 0.000 claims description 2
- 229920000069 polyphenylene sulfide Polymers 0.000 claims description 2
- 239000011347 resin Substances 0.000 claims 1
- 229920005989 resin Polymers 0.000 claims 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 6
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- 239000000463 material Substances 0.000 abstract description 4
- 239000002904 solvent Substances 0.000 abstract description 4
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 3
- 102000004190 Enzymes Human genes 0.000 abstract description 2
- 108090000790 Enzymes Proteins 0.000 abstract description 2
- 230000003287 optical effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 11
- 239000011248 coating agent Substances 0.000 description 8
- 238000000576 coating method Methods 0.000 description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- 238000010248 power generation Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- 229910001220 stainless steel Inorganic materials 0.000 description 4
- 239000010935 stainless steel Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000013557 residual solvent Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、プラズマＣＶＤ装置などの高真空成膜装置
を用いて光発電素子を製造する際に用いる光発電素子基
板の製造方法、特に金属基板の表面に有機ｉＰ、縁材料
の皮膜を形成した光発電素子基板の製造方法に関するも
のである。Detailed Description of the Invention [Industrial Field of Application] This invention relates to a method for manufacturing a photovoltaic device substrate used when manufacturing a photovoltaic device using a high vacuum film forming apparatus such as a plasma CVD device, and in particular to a method for manufacturing a photovoltaic device substrate using a high vacuum film forming apparatus such as a plasma CVD device. The present invention relates to a method of manufacturing a photovoltaic device substrate in which a film of organic iP and edge material is formed on the surface of the substrate.
近年、ブラズ−ｒ ｃ ｖ Ｄ４！ ｆｉｔを用いてｐ
−１−ｎ接合を有するアモルファスシリコン光発電素子
が製造され、各種用途忙利用されている。このｎ−１−
ｎ接合を有する単層の光発電１子の実効光起電力は０．
５ボルト程度であるため、各種用途に利用する場合には
、複数個の光発電、素子を直列に接続して所定の起電力
を得なければならない、このために、光発電素子の基板
として、ガラス基板やステンレスなどの金属基板が用い
られているが、可祷性を要する用途に光発電素子を用い
る場合には２薄１漠の金属基板が用いられる。しかし、
光発電素子の基板として金槁基板を用いる場合ＶＣＵ
、金Ｍ基板上に直接ｏ−１−ｎ接合を有する光発電素子
を複数個形成しても、金ｌＩ％基板が共通の下部電甑と
して作用するため、これらの光発電、素子間で直列接続
を行うことができない。そこで従来、ステンレス鋼板の
よう々金属基板上で光発電素子の１１ゴ列接続を行う場
合には、第２図に示すように、予め金属基板上にポリイ
ミド系樹脂のような回帰性を有する耐熱性絶１・材料の
皮膜を形成したのちに、この皮膜の上に金属製下部電極
をジ数個形成することによって、発電区分の異なる光発
電、素子を同一基板上に製造することが行われている。In recent years, Braz-RCV D4! p using fit
Amorphous silicon photovoltaic devices having a -1-n junction have been manufactured and are widely used in various applications. This n-1-
The effective photovoltaic force of a single layer photovoltaic device having an n-junction is 0.
Since it is about 5 volts, when using it for various purposes, it is necessary to connect multiple photovoltaic elements in series to obtain a predetermined electromotive force.For this purpose, as a substrate for photovoltaic elements, Metal substrates such as glass substrates and stainless steel are used, but when a photovoltaic element is used for applications that require flexibility, metal substrates of various thicknesses and thicknesses are used. but,
When using a gold-plated substrate as a substrate for a photovoltaic device, VCU
Even if a plurality of photovoltaic devices having o-1-n junctions are formed directly on the gold M substrate, since the gold lI% substrate acts as a common lower electrode, these photovoltaic devices can be connected in series. Unable to make connection. Conventionally, when connecting 11 photovoltaic elements in rows on a metal substrate such as a stainless steel plate, as shown in Fig. By forming a film of the material and then forming several metal lower electrodes on the film, it is possible to manufacture photovoltaic power generation devices with different power generation categories on the same substrate. ing.
！５２図は従来の光発電素子の断面図であり１図におい
て（ハは金ＦＡ基板、（２）はこの金属基板（ハの上に
設けられた耐熱性の有機Ｐ縁皮膜、（３）けこの有機絶
縁皮１！Ａ（λ）の上に例えばスパッタ装置によって銀
が成かされた金属製下部電極、（ｕｌ 、 （ｒｌ 、
（６１はこの下部９ｃ極（３）の上に例えばプラズマ
ＣＶＤ装置によって成膜されたアモルファスシリコン光
ｉ ｗ、 素子の膜であり、それぞれ（＜＜ｌｄｎ層、
（Ｓ）は土層、（６１けＴｌ ｆｆｌである。（７１目
この光発電素子のｐ １８１６１の表面に例えばスパッ
タ装＃によって形成された透明導電膜、（ＩＩはこの透
明導電膜（７１の上に例えば電子ビーム蒸着装置を用い
て銀の蒸着膜が形成された上部＊水である。（り）はＦ
部電極（３），ｎＪｍｌ＃ｌ、 １ｒ４（ｓｌ、ｐ層
（６）、透明４電換（７１、及び上部型・ネｆｉｌから
構成された元殆に素子であり、（ｉｏ）は互いに離れて
設けられた光発電素子（９）の上部ｍ極（ｆｆｌと下部
電極（３）を従続するリード線である。! Figure 52 is a cross-sectional view of a conventional photovoltaic device. On this organic insulating film 1!A(λ), metal lower electrodes (ul, (rl,
(61 is an amorphous silicon film formed on this lower 9c electrode (3) by, for example, a plasma CVD device, and is a film of an element, respectively (<<ldn layer,
(S) is the soil layer (61 Tl ffl. This is the upper part*water on which a silver vapor deposition film is formed using, for example, an electron beam evaporation device.(ri) is F
It is basically an element consisting of a part electrode (3), nJml#l, 1r4 (sl, p layer (6), transparent 4-electrode (71), and upper type/nefil, and (io) are separated from each other. This is a lead wire that connects the upper m-pole (ffl) of the photovoltaic element (9) and the lower electrode (3) provided in the photovoltaic element (9).
従来の光発電素子は上記のように構成され、透明導電膜
（り１側から適当なエネルギー強羅をもった光が光発電
素子（ワ）のｐ層（Ａ１．ｉノー１ｊｌ、ｎ層（ｐｉ
ＩＣ入射すると、元発粛、素子（９）中で正孔と電子が
発生する。光発電素子は、第２図では透明４電膜（り）
側から順にｐｍ （６１、ｘＪ４１ｊ１．ｎ層（ｕｌの
接合構造をもっているので、正孔はｐ層（６）に拡散し
、一方、′成子はｎ ｍ ｆ５１に拡散する。従って、
ｐ層（６）と逍明導實膜（７１を通じて電気的に接続し
ている上部電極１ｆｆ＋が正極になり、ｎ層（４）と電
気的に接し−Ｃいる下部ｄ極（３）が負部となる九発１
素子（デ１が形成される。そこで、異なる発電区分を有
する元発、Ｊ！素子（ワ）同士をリード線（１０）によ
って直列に接続すると、高電圧の電気工不ルヤーを取り
出すことができる。A conventional photovoltaic element is constructed as described above, and light with an appropriate energy intensity is emitted from the transparent conductive film (1) side to the p layer (A1.i no 1jl, n layer (pi)
When incident on the IC, holes and electrons are generated in the element (9). In Figure 2, the photovoltaic element is a transparent four-electrode film.
Since it has a junction structure of pm (61,xJ41j1.
The upper electrode 1ff+, which is electrically connected to the p-layer (6) through the Shomei conductive film (71), becomes a positive electrode, and the lower d-electrode (3), which is electrically connected to the n-layer (4) and has -C, becomes a negative electrode. nine shots 1
An element (De1) is formed.Therefore, by connecting the original J! elements (Wa) with different power generation sections in series with each other using a lead wire (10), it is possible to take out a high-voltage electric power generator. .
第３図は、上記のような光発電素子を形成する際に使用
される光発電素子基板の製造工程を示す説明図あり、（
／／）は例えは長尺のステンレス薄板がロール巻きちれ
たフリーロール、 （／Ｊｌはこのフリーロール（／／
）から送り出された可撓性の金属基板、（／３）［この
金ＤＡ基板（／コ）を洗浄するための洗浄槽例えは超音
波洗浄槽、（／４）はこの洗浄槽（／３）の中に入れら
れた溶剤、（／ｓ）は洗浄槽（／３）で抗紗さγした金
属基板（／コ）全乾燥するための乾燥炉、（／６））よ
この乾隊炉（／ｊ）で乾燥された金属蚕板（／２）の片
側表面に；口゛機絶縁材料を頭布するためのコーディン
グ情、（、／７）はこのコーチインク槽（／６）の中に
入れられた有様絶縁材料例えばポリイミド系樹脂、ポリ
フェニレンサルファイド糸倒脂鳴、（／ｌ）はコーチイ
ンク槽ａ（／ｉｓ）＆（ふ・いて並−基板（／コ）に塗
布された有機Ｐ縁材料（／７）の皮膜すなわち有機絶縁
材料（コ）の課厚調壷用のコーティングロール、 （／
？ ）ｉｊ金１・焉基板（／コ）の表面に塗布された
有機絶縁皮膜（２）を乾燥・半硬化させるための低温加
熱炉、（λ０）は片側表面に有機絶縁皮膜（コ１が塗布
された金属基板、（２／）Ｖｉこの金属基板（コ０）を
巻き取るだめの駆動用ロール、（２コ）、（コ、ｔ）、
（ａ≠）、（コｓ）、Ｏｂ）。FIG. 3 is an explanatory diagram showing the manufacturing process of a photovoltaic device substrate used when forming a photovoltaic device as described above;
//) is a free roll made of a long thin stainless steel plate, (/Jl is this free roll (//
) A flexible metal substrate sent out from (/3) ), (/s) is the metal substrate that has been gauzed in the cleaning tank (/3), (/ko) is the drying oven for complete drying, (/6)) is the drying oven next to it. On one side of the metal silk plate (/2) dried in (/j); the coding information for coating the mouth machine insulating material, (, /7) is in this coach ink tank (/6). Insulating materials such as polyimide resin, polyphenylene sulfide threads, (/l) are organic materials coated on the coach ink tank a (/is) P edge material (/7) film, i.e. organic insulating material (co) coating roll for thickness adjustment jar, (/
? ) ij Gold 1 / A low temperature heating furnace for drying and semi-curing the organic insulating film (2) applied to the surface of the substrate ( / ), (λ0) is a low temperature heating furnace for drying and semi-curing the organic insulating film (2) applied to one side metal substrate, (2/) Vi, drive roll for winding up this metal substrate (ko0), (2ko), (ko, t),
(a≠), (kos), Ob).
（コア）、（コｇ）は金属基板（／２）及び（２ｏ）を
送るための送りロールである。(core) and (cog) are feed rolls for feeding the metal substrates (/2) and (2o).
従来の光発電素子基板の製造方法は１例えば０、／膜厚
のステンレス薄板である金属基板（／２）がフリーロー
ル（／／）から送り出され１例えばフッ素系溶剤の入っ
た超音波洗浄槽（／３）を通ることによって脱脂・脱兎
される。清浄化された金属基板（／コ）は、乾燥炉（１
５）を通って洗浄溶剤を乾燥したのち、コーテイング槽
（／６’）ｆ通る。このコーテイング槽（／６）では有
機溶剤によって希釈された有機絶縁材料（／７）として
のポリイミド系樹脂がスプレーによって金属基板（／２
）の片側表面に塗布され、コーティングロール（７ｇ）
によって所定の膜厚に調整される。この膜厚は金属基板
（／２）の表面粗さによって、１０〜λθＱ Ｂｍの任
意の厚さにｒＡ幣できる。金属基板（／２）の片側表面
に塗布された有機絶縁皮膜（２）は１次に低温加熱炉（
／９）において加熱又は紫外線・電子線照射によって乾
燥・半硬化される。この低温加熱炉（／テ）中では、上
記の希釈溶剤の殆んどが蒸散すると共に、有機絶縁皮膜
（２）の硬化が始まる。このように有機絶縁被膜（コ）
が片側表面に塗布された金属基板（２０）は、最後に駆
動用ロール（コ／）に巻き取られろ。The conventional manufacturing method for photovoltaic device substrates is that a metal substrate (/2), which is a thin stainless steel plate with a film thickness of, for example, 0, is sent out from a free roll (//) and placed in an ultrasonic cleaning tank containing, for example, a fluorinated solvent. It is degreased and removed by passing through (/3). The cleaned metal substrate (/co) is placed in a drying oven (1
After passing through 5) to dry the cleaning solvent, it passes through a coating tank (/6') f. In this coating bath (/6), polyimide resin as an organic insulating material (/7) diluted with an organic solvent is sprayed onto the metal substrate (/2).
) on one side of the coating roll (7g)
The film thickness is adjusted to a predetermined value. The thickness of this film can be any thickness from 10 to λθQBm depending on the surface roughness of the metal substrate (/2). The organic insulating film (2) applied to one surface of the metal substrate (/2) is first heated in a low temperature heating furnace (
/9), it is dried and semi-cured by heating or UV/electron beam irradiation. In this low-temperature heating furnace (/TE), most of the diluting solvent mentioned above evaporates and the organic insulating film (2) begins to harden. In this way, organic insulating coating (co)
The metal substrate (20) coated on one side is finally wound up on a driving roll (co/).
上記のような従来の光発電素子基板の製造方法では１通
常の大気条件下で形成された有機絶縁皮膜（コ）中に低
分子量の未反応物や窒素、酸素などのガスが取り込まれ
ている。一方、アモルファスシリコン光発電素子の成膜
は、プラズマＣＶＤ法のような高温・高真空装着を用い
て、光発電素子基板の温度をコＯＯ℃〜３００℃に上げ
て行われている。In the conventional manufacturing method for photovoltaic device substrates as described above, 1. low molecular weight unreacted substances and gases such as nitrogen and oxygen are incorporated into the organic insulating film formed under normal atmospheric conditions. . On the other hand, film formation of amorphous silicon photovoltaic devices is carried out by raising the temperature of the photovoltaic device substrate to 00° C. to 300° C. using high-temperature, high-vacuum mounting such as plasma CVD.
従って、有機絶縁皮膜（りで被覆された金属基板（ハを
用いて光発電素子を製造する場合、有機絶縁皮膜（２）
中から上記の未反応物やガスが放出される。Therefore, when manufacturing a photovoltaic device using a metal substrate coated with an organic insulating film (2), the organic insulating film (2)
The above-mentioned unreacted substances and gases are released from inside.
これらの未反応物やガスがアモルファスシリコン光発電
素子の膜中に取り込筐れると、光発電素子の候の性質が
恋〈なり、さらに光発電素子の電気的特性や寿命が低下
するという間４点があった。If these unreacted substances and gases are incorporated into the film of an amorphous silicon photovoltaic device, the properties of the photovoltaic device will deteriorate, and the electrical characteristics and life of the photovoltaic device will deteriorate. There were 4 points.
この発明はかかる問題点（ｉ−解決するためになされた
もので、金属基板の絶縁膜に耐熱性の有機絶縁皮膜を用
いた場合でも、特性の劣化しない優れた光発電素子が製
造できる光発電素子基板の製造方法を得ることを目的と
する、
〔問題点を解決するための手段〕
この発明に係る光発電素子基板の製造方法は。This invention was made to solve such problems (i-), and is a photovoltaic power generation device that can produce an excellent photovoltaic device whose characteristics do not deteriorate even when a heat-resistant organic insulating film is used as an insulating film on a metal substrate. [Means for Solving Problems] A method for manufacturing a photovoltaic device substrate according to the present invention is aimed at obtaining a method for manufacturing a device substrate.
金属基板上に重布した耐熱性の有機絶縁材料の皮膜を乾
燥・半硬化する工程の次に真空加熱乾燥工程を設け、こ
の工程で、光発電素子のアモルファスシリコン膜の成膜
温屁より高温で有機絶縁材料の皮膜を加熱処理するよう
にしたものである。After the process of drying and semi-curing the film of heat-resistant organic insulating material overlaid on the metal substrate, a vacuum heating drying process is performed. The film of the organic insulating material is heat-treated.
〔作 用〕
この発明においては、金属基板上に塗布されたや吸蔵・
吸着されているガス成分が除去される。[Function] In the present invention, the occlusion and occlusion film coated on the metal substrate
Adsorbed gas components are removed.
第１図はこの発明による先発′ｆｔ素子基板の製造工程
を示す説明図であり、（／／）〜（コｇ）は第３図に’
Ｓ？けるものと全く同一である。（２デ）は低温加熱炉
（／？）で半硬化した有機絶縁皮膜（２）を真！加熱乾
燥して完全に硬化させるための高温真空加熱炉、（ＪＯ
）は金ＭＡ板（２０）を送るための送りロールである。FIG. 1 is an explanatory diagram showing the manufacturing process of the original FT element substrate according to the present invention, and (//) to (g) are shown in FIG. 3.
S? It is exactly the same as the (2de) is an organic insulating film (2) semi-cured in a low-temperature heating furnace (/?). High temperature vacuum heating furnace (JO
) is a feed roll for feeding the gold MA plate (20).
上記のように構成された光発電素子基板の製造方法に２
いては、上記従来方法と同様に行われ、金属基板（／−
）の片側表面に塗布された有機絶縁皮膜（コ）は、低温
加熱炉（／９）によって乾燥・半硬化される。次に、こ
の金属基板（コ０）は高温真空加熱炉（λ９）に送り込
まれ、 Ｊ００’（：、−ｖｏＯ℃、好適には３００’
（：、〜３ＳＯ℃で３０分〜／２０分間加熱されろこと
により、金四基板（，２０）の表面の有機絶縁皮膜（２
１が完全に硬化される。この加熱温度は。2. A method for manufacturing a photovoltaic device substrate configured as described above.
The metal substrate (/-
) is dried and semi-cured in a low-temperature heating furnace (/9). Next, this metal substrate (CO0) is sent to a high temperature vacuum heating furnace (λ9), and J00'(:, -voO℃, preferably 300'
The organic insulating film (2
1 is completely cured. What is this heating temperature?
アモルファスシリコン光発電素子の成＋′ｌＡ謳ｆｆｆ
ｉ（２θθ°Ｃ〜３ｏｏ’Ｃ）より高温に設定されたも
のである。高温真空加熱炉（コブ）は上記の温度でかつ
真空に保たれているため、有機絶縁皮膜（２）中に混入
した低分子量の未反応生成物、残存溶剤、及びこの皮膜
中に吸蔵・吸着された酵素ψ窒素などのガス状物質が除
去される。続いて、有機Ｐ！縁皮膜（２）が塗布された
金属基板（−〇）は、駆動用ロール（コ／）によって巻
き取られる。Development of amorphous silicon photovoltaic device
i (2θθ°C to 3oo'C). Since the high-temperature vacuum heating furnace (cob) is kept at the above temperature and in a vacuum, low molecular weight unreacted products and residual solvent mixed into the organic insulation film (2) are occluded and adsorbed in this film. Gaseous substances such as nitrogen are removed by the enzyme ψ produced. Next, organic P! The metal substrate (-) coated with the edge film (2) is wound up by a driving roll (ko/).
次に、以上のように製造された光発電素子基板及び従来
の製造方法により製造された光発電素子基板の表面に、
それぞれ光発電素子（ｑｌを形成した。Next, on the surface of the photovoltaic device substrate manufactured as described above and the photovoltaic device substrate manufactured by the conventional manufacturing method,
A photovoltaic device (ql) was formed respectively.
すなわち、これらの先発１１ｔ素子基板の表面にそれぞ
れ下部電極（３）、５ｏｏｏＡの３層（ｕｌ 、 １層
（Ｓ）、及び狐層（６１、透明導電膜（７）及び上部電
極（ざ）を形成した６次いで、これらの光発電素子（？
）に、 「ＡＭ−／Ｊを用いて１００１＋１Ｗ／−の光
をｇｏ時間照射して。That is, a lower electrode (3), three layers of 500A (UL, 1 layer (S), and a fox layer (61), a transparent conductive film (7), and an upper electrode (ZA) were respectively formed on the surface of these original 11t element substrates. These photovoltaic elements (?) were then formed.
), ``Using AM-/J, irradiate light of 1001+1W/- for go time.
光の変換効率の変化を測定した。その結果を次の表
（か面＆／ｄ）
この表から、この発明の製造方法による基板を用いて造
られた光発電素子は、初期の変換効率が高いのみならず
、光劣化の程度も少ないことがわかる。Changes in light conversion efficiency were measured. The results are shown in the table below.
(Curface &/d) From this table, it can be seen that the photovoltaic device manufactured using the substrate according to the manufacturing method of the present invention not only has a high initial conversion efficiency but also has a low degree of photodeterioration.
この発明は以上説明したとおり、金属基板上に有機絶縁
材料の皮膜を形成して乾燥・半硬化したのち、皮膜を真
空加熱乾燥する工程を有することにより、予め有機絶縁
皮膜中の未反応生成物や不純物ガス成分がアモルファス
シリコン光発電素子の成膜に先立って除去されるので、
光発電素子基板上に形成された光発電素子は、光の変換
効率及び素子寿命性が優れているという効果がある、As explained above, this invention includes a step of forming a film of an organic insulating material on a metal substrate, drying and semi-curing the film, and then heating and drying the film in vacuum. and impurity gas components are removed prior to film formation of the amorphous silicon photovoltaic device.
The photovoltaic device formed on the photovoltaic device substrate has the effect of having excellent light conversion efficiency and device lifespan.
【図面の簡単な説明】
第１図はこの発明の一実施例による光発電素子基板の製
造工程を示す説明図、第２図は従来の光発電素子の断面
図、第３図は従来の光発電素子基板の製造工程を示す説
明図である。
図において、（ハは金属基板、（，２）は有機絶縁皮膜
。
（３）は下部電極、（り１は１層、（ｙｌはｉ ＨＡ、
（６）はｐ ７ｍ、（７）は透明導電膜、（ざ）は上部
電極、（９１は光発電素子、（／２）は金属基板、（／
ｂ）はコーテイング槽。
（／７）は有機絶縁材料％（／ｌ）はコーティングロー
ル、（／？）は低温加熱炉、（２０）は金属基板、（コ
ブ）は高温真空加熱炉である。
なお、各図中、同一符号は同−又は相当部分を示す、[Brief Description of the Drawings] Fig. 1 is an explanatory diagram showing the manufacturing process of a photovoltaic element substrate according to an embodiment of the present invention, Fig. 2 is a cross-sectional view of a conventional photovoltaic element, and Fig. 3 is an explanatory diagram showing the manufacturing process of a photovoltaic element substrate according to an embodiment of the present invention. It is an explanatory view showing a manufacturing process of a power generation element board. In the figure, (c is a metal substrate, (,2) is an organic insulating film, (3) is a lower electrode, (ri1 is one layer, (yl is iHA,
(6) is p 7m, (7) is the transparent conductive film, (Z) is the upper electrode, (91 is the photovoltaic element, (/2) is the metal substrate, (/
b) is a coating tank. (/7) is an organic insulating material % (/l) is a coating roll, (/?) is a low temperature heating furnace, (20) is a metal substrate, and (bump) is a high temperature vacuum heating furnace. In addition, in each figure, the same reference numerals indicate the same or corresponding parts.
Claims (4)
と、形成された皮膜を乾燥・半硬化する工程と、乾燥・
半硬化された皮膜を真空加熱乾燥する工程とを有するこ
とを特徴とする光発電素子基板の製造方法。(1) A process of forming a film of an organic insulating material on a metal substrate, a process of drying and semi-curing the formed film, and a process of drying and semi-curing the formed film.
1. A method for manufacturing a photovoltaic element substrate, comprising the step of vacuum heating and drying a semi-cured film.
ニレンサルファイド系樹脂であることを特徴とする特許
請求の範囲第１項記載の光発電素子基板の製造方法。(2) The method for manufacturing a photovoltaic device substrate according to claim 1, wherein the organic insulating material is a polyimide resin or a polyphenylene sulfide resin.
発電素子を形成するのに必要な温度よりも高温であるこ
とを特徴とする特許請求の範囲第１項記載の光発電素子
基板の製造方法。(3) The photovoltaic device substrate according to claim 1, wherein the temperature of vacuum heating and drying is higher than the temperature required to form a photovoltaic device on the photovoltaic device substrate. manufacturing method.
あることを特徴とする特許請求の範囲第１項又は第３項
記載の光発電素子基板の製造方法。(4) The method for manufacturing a photovoltaic device substrate according to claim 1 or 3, wherein the vacuum heating and drying temperature is 300°C to 350°C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61074304A JPS62232172A (en) | 1986-04-02 | 1986-04-02 | Manufacture of substrate for photovoltaic element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61074304A JPS62232172A (en) | 1986-04-02 | 1986-04-02 | Manufacture of substrate for photovoltaic element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62232172A true JPS62232172A (en) | 1987-10-12 |
Family
ID=13543252
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61074304A Pending JPS62232172A (en) | 1986-04-02 | 1986-04-02 | Manufacture of substrate for photovoltaic element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62232172A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010099656A (en) * | 2008-10-06 | 2010-05-06 | Bomag Gmbh | Device for generating circular vibration or directional vibration having continuously adjustable vibration amplitude and/or exciting force |
-
1986
- 1986-04-02 JP JP61074304A patent/JPS62232172A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010099656A (en) * | 2008-10-06 | 2010-05-06 | Bomag Gmbh | Device for generating circular vibration or directional vibration having continuously adjustable vibration amplitude and/or exciting force |
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