JPS62226145A - Solder resist - Google Patents
Solder resistInfo
- Publication number
- JPS62226145A JPS62226145A JP6726086A JP6726086A JPS62226145A JP S62226145 A JPS62226145 A JP S62226145A JP 6726086 A JP6726086 A JP 6726086A JP 6726086 A JP6726086 A JP 6726086A JP S62226145 A JPS62226145 A JP S62226145A
- Authority
- JP
- Japan
- Prior art keywords
- parts
- solder resist
- epoxy resin
- weight
- component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910000679 solder Inorganic materials 0.000 title claims abstract description 55
- 239000003822 epoxy resin Substances 0.000 claims abstract description 39
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 39
- 229920003986 novolac Polymers 0.000 claims abstract description 15
- 239000007795 chemical reaction product Substances 0.000 claims abstract description 13
- 239000013638 trimer Substances 0.000 claims abstract description 11
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229930003836 cresol Natural products 0.000 claims abstract description 10
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 7
- 125000003647 acryloyl group Chemical group O=C([*])C([H])=C([H])[H] 0.000 claims abstract description 6
- 125000005442 diisocyanate group Chemical group 0.000 claims abstract description 5
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims abstract description 5
- 239000003504 photosensitizing agent Substances 0.000 claims abstract description 5
- 239000004593 Epoxy Substances 0.000 claims abstract description 4
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 claims abstract description 4
- IQPQWNKOIGAROB-UHFFFAOYSA-N isocyanate group Chemical group [N-]=C=O IQPQWNKOIGAROB-UHFFFAOYSA-N 0.000 claims abstract description 3
- -1 methacryloyl groups Chemical group 0.000 claims description 19
- 238000002156 mixing Methods 0.000 claims description 14
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 12
- 150000001875 compounds Chemical class 0.000 claims description 12
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 claims description 11
- VYGUBTIWNBFFMQ-UHFFFAOYSA-N [N+](#[C-])N1C(=O)NC=2NC(=O)NC2C1=O Chemical group [N+](#[C-])N1C(=O)NC=2NC(=O)NC2C1=O VYGUBTIWNBFFMQ-UHFFFAOYSA-N 0.000 claims description 4
- 229920001187 thermosetting polymer Polymers 0.000 claims description 4
- 239000000758 substrate Substances 0.000 abstract description 10
- 238000013007 heat curing Methods 0.000 abstract description 7
- 238000010438 heat treatment Methods 0.000 abstract description 7
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 15
- 238000000034 method Methods 0.000 description 13
- 238000011161 development Methods 0.000 description 11
- 238000012360 testing method Methods 0.000 description 10
- 239000004925 Acrylic resin Substances 0.000 description 9
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 9
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 9
- 239000000203 mixture Substances 0.000 description 9
- UOCLXMDMGBRAIB-UHFFFAOYSA-N 1,1,1-trichloroethane Chemical compound CC(Cl)(Cl)Cl UOCLXMDMGBRAIB-UHFFFAOYSA-N 0.000 description 8
- 229920000178 Acrylic resin Polymers 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 8
- FAIDIRVMPHBRLT-UHFFFAOYSA-N propane-1,2,3-triol;prop-2-enoic acid Chemical compound OC(=O)C=C.OC(=O)C=C.OCC(O)CO FAIDIRVMPHBRLT-UHFFFAOYSA-N 0.000 description 8
- 229920005989 resin Polymers 0.000 description 7
- 239000011347 resin Substances 0.000 description 7
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 6
- ZFSLODLOARCGLH-UHFFFAOYSA-N isocyanuric acid Chemical compound OC1=NC(O)=NC(O)=N1 ZFSLODLOARCGLH-UHFFFAOYSA-N 0.000 description 6
- 239000002904 solvent Substances 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000005476 soldering Methods 0.000 description 5
- XFCMNSHQOZQILR-UHFFFAOYSA-N 2-[2-(2-methylprop-2-enoyloxy)ethoxy]ethyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCOCCOC(=O)C(C)=C XFCMNSHQOZQILR-UHFFFAOYSA-N 0.000 description 4
- OXTJFBHLOXGCPW-UHFFFAOYSA-N 6-cyanatohexyl cyanate Chemical compound N#COCCCCCCOC#N OXTJFBHLOXGCPW-UHFFFAOYSA-N 0.000 description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 4
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 4
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000001723 curing Methods 0.000 description 4
- QGBSISYHAICWAH-UHFFFAOYSA-N dicyandiamide Chemical compound NC(N)=NC#N QGBSISYHAICWAH-UHFFFAOYSA-N 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 239000000454 talc Substances 0.000 description 4
- 229910052623 talc Inorganic materials 0.000 description 4
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 150000001412 amines Chemical class 0.000 description 3
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 125000004386 diacrylate group Chemical group 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 239000001294 propane Substances 0.000 description 3
- QPFMBZIOSGYJDE-UHFFFAOYSA-N 1,1,2,2-tetrachloroethane Chemical compound ClC(Cl)C(Cl)Cl QPFMBZIOSGYJDE-UHFFFAOYSA-N 0.000 description 2
- AHDSRXYHVZECER-UHFFFAOYSA-N 2,4,6-tris[(dimethylamino)methyl]phenol Chemical compound CN(C)CC1=CC(CN(C)C)=C(O)C(CN(C)C)=C1 AHDSRXYHVZECER-UHFFFAOYSA-N 0.000 description 2
- LEJBBGNFPAFPKQ-UHFFFAOYSA-N 2-(2-prop-2-enoyloxyethoxy)ethyl prop-2-enoate Chemical compound C=CC(=O)OCCOCCOC(=O)C=C LEJBBGNFPAFPKQ-UHFFFAOYSA-N 0.000 description 2
- INQDDHNZXOAFFD-UHFFFAOYSA-N 2-[2-(2-prop-2-enoyloxyethoxy)ethoxy]ethyl prop-2-enoate Chemical compound C=CC(=O)OCCOCCOCCOC(=O)C=C INQDDHNZXOAFFD-UHFFFAOYSA-N 0.000 description 2
- KUDUQBURMYMBIJ-UHFFFAOYSA-N 2-prop-2-enoyloxyethyl prop-2-enoate Chemical compound C=CC(=O)OCCOC(=O)C=C KUDUQBURMYMBIJ-UHFFFAOYSA-N 0.000 description 2
- FIHBHSQYSYVZQE-UHFFFAOYSA-N 6-prop-2-enoyloxyhexyl prop-2-enoate Chemical compound C=CC(=O)OCCCCCCOC(=O)C=C FIHBHSQYSYVZQE-UHFFFAOYSA-N 0.000 description 2
- KWOLFJPFCHCOCG-UHFFFAOYSA-N Acetophenone Chemical compound CC(=O)C1=CC=CC=C1 KWOLFJPFCHCOCG-UHFFFAOYSA-N 0.000 description 2
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 description 2
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 2
- WOBHKFSMXKNTIM-UHFFFAOYSA-N Hydroxyethyl methacrylate Chemical compound CC(=C)C(=O)OCCO WOBHKFSMXKNTIM-UHFFFAOYSA-N 0.000 description 2
- BAPJBEWLBFYGME-UHFFFAOYSA-N Methyl acrylate Chemical compound COC(=O)C=C BAPJBEWLBFYGME-UHFFFAOYSA-N 0.000 description 2
- 239000002202 Polyethylene glycol Substances 0.000 description 2
- HVVWZTWDBSEWIH-UHFFFAOYSA-N [2-(hydroxymethyl)-3-prop-2-enoyloxy-2-(prop-2-enoyloxymethyl)propyl] prop-2-enoate Chemical compound C=CC(=O)OCC(CO)(COC(=O)C=C)COC(=O)C=C HVVWZTWDBSEWIH-UHFFFAOYSA-N 0.000 description 2
- 238000007259 addition reaction Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 2
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 2
- XXBDWLFCJWSEKW-UHFFFAOYSA-N dimethylbenzylamine Chemical compound CN(C)CC1=CC=CC=C1 XXBDWLFCJWSEKW-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- STVZJERGLQHEKB-UHFFFAOYSA-N ethylene glycol dimethacrylate Substances CC(=C)C(=O)OCCOC(=O)C(C)=C STVZJERGLQHEKB-UHFFFAOYSA-N 0.000 description 2
- 125000005395 methacrylic acid group Chemical group 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 229920001223 polyethylene glycol Polymers 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 2
- RSJKGSCJYJTIGS-UHFFFAOYSA-N undecane Chemical compound CCCCCCCCCCC RSJKGSCJYJTIGS-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- QNODIIQQMGDSEF-UHFFFAOYSA-N (1-hydroxycyclohexyl)-phenylmethanone Chemical compound C=1C=CC=CC=1C(=O)C1(O)CCCCC1 QNODIIQQMGDSEF-UHFFFAOYSA-N 0.000 description 1
- HHQAGBQXOWLTLL-UHFFFAOYSA-N (2-hydroxy-3-phenoxypropyl) prop-2-enoate Chemical compound C=CC(=O)OCC(O)COC1=CC=CC=C1 HHQAGBQXOWLTLL-UHFFFAOYSA-N 0.000 description 1
- YYJIYUNJTKCRHL-UHFFFAOYSA-N (2-hydroxy-3-prop-2-enoyloxypropyl) prop-2-enoate Chemical compound C=CC(=O)OCC(O)COC(=O)C=C YYJIYUNJTKCRHL-UHFFFAOYSA-N 0.000 description 1
- DDKMFQGAZVMXQV-UHFFFAOYSA-N (3-chloro-2-hydroxypropyl) 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCC(O)CCl DDKMFQGAZVMXQV-UHFFFAOYSA-N 0.000 description 1
- POTYORUTRLSAGZ-UHFFFAOYSA-N (3-chloro-2-hydroxypropyl) prop-2-enoate Chemical compound ClCC(O)COC(=O)C=C POTYORUTRLSAGZ-UHFFFAOYSA-N 0.000 description 1
- XBTRYWRVOBZSGM-UHFFFAOYSA-N (4-methylphenyl)methanediamine Chemical compound CC1=CC=C(C(N)N)C=C1 XBTRYWRVOBZSGM-UHFFFAOYSA-N 0.000 description 1
- 229920002818 (Hydroxyethyl)methacrylate Polymers 0.000 description 1
- GJZFGDYLJLCGHT-UHFFFAOYSA-N 1,2-diethylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=C(CC)C(CC)=CC=C3SC2=C1 GJZFGDYLJLCGHT-UHFFFAOYSA-N 0.000 description 1
- OVBFMUAFNIIQAL-UHFFFAOYSA-N 1,4-diisocyanatobutane Chemical compound O=C=NCCCCN=C=O OVBFMUAFNIIQAL-UHFFFAOYSA-N 0.000 description 1
- DFPJRUKWEPYFJT-UHFFFAOYSA-N 1,5-diisocyanatopentane Chemical compound O=C=NCCCCCN=C=O DFPJRUKWEPYFJT-UHFFFAOYSA-N 0.000 description 1
- DKEGCUDAFWNSSO-UHFFFAOYSA-N 1,8-dibromooctane Chemical compound BrCCCCCCCCBr DKEGCUDAFWNSSO-UHFFFAOYSA-N 0.000 description 1
- ZDQNWDNMNKSMHI-UHFFFAOYSA-N 1-[2-(2-prop-2-enoyloxypropoxy)propoxy]propan-2-yl prop-2-enoate Chemical compound C=CC(=O)OC(C)COC(C)COCC(C)OC(=O)C=C ZDQNWDNMNKSMHI-UHFFFAOYSA-N 0.000 description 1
- HSKPJQYAHCKJQC-UHFFFAOYSA-N 1-ethylanthracene-9,10-dione Chemical compound O=C1C2=CC=CC=C2C(=O)C2=C1C=CC=C2CC HSKPJQYAHCKJQC-UHFFFAOYSA-N 0.000 description 1
- VILCJCGEZXAXTO-UHFFFAOYSA-N 2,2,2-tetramine Chemical compound NCCNCCNCCN VILCJCGEZXAXTO-UHFFFAOYSA-N 0.000 description 1
- XKNLMAXAQYNOQZ-UHFFFAOYSA-N 2,2-bis(hydroxymethyl)propane-1,3-diol;2-methylprop-2-enoic acid Chemical compound CC(=C)C(O)=O.CC(=C)C(O)=O.CC(=C)C(O)=O.CC(=C)C(O)=O.OCC(CO)(CO)CO XKNLMAXAQYNOQZ-UHFFFAOYSA-N 0.000 description 1
- ZDTLUUIYCAMIMQ-UHFFFAOYSA-N 2-(2-hydroxyethoxy)-1-methoxyethanol;2-methylprop-2-enoic acid Chemical compound CC(=C)C(O)=O.COC(O)COCCO ZDTLUUIYCAMIMQ-UHFFFAOYSA-N 0.000 description 1
- CMCLUJRFBZBVSW-UHFFFAOYSA-N 2-(2-hydroxyethoxy)-1-methoxyethanol;prop-2-enoic acid Chemical compound OC(=O)C=C.COC(O)COCCO CMCLUJRFBZBVSW-UHFFFAOYSA-N 0.000 description 1
- JJBFVQSGPLGDNX-UHFFFAOYSA-N 2-(2-methylprop-2-enoyloxy)propyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OC(C)COC(=O)C(C)=C JJBFVQSGPLGDNX-UHFFFAOYSA-N 0.000 description 1
- WTJTUKSVRGVSNZ-UHFFFAOYSA-N 2-(2-phenoxyethoxy)ethyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCOCCOC1=CC=CC=C1 WTJTUKSVRGVSNZ-UHFFFAOYSA-N 0.000 description 1
- QFNYOIKHNYCFRG-UHFFFAOYSA-N 2-(2-phenoxyethoxy)ethyl prop-2-enoate Chemical compound C=CC(=O)OCCOCCOC1=CC=CC=C1 QFNYOIKHNYCFRG-UHFFFAOYSA-N 0.000 description 1
- HWMKXRDWNNPIEA-UHFFFAOYSA-N 2-(diethylamino)-3-ethylbenzoic acid Chemical compound CCN(CC)C1=C(CC)C=CC=C1C(O)=O HWMKXRDWNNPIEA-UHFFFAOYSA-N 0.000 description 1
- JFZBUNLOTDDXNY-UHFFFAOYSA-N 2-[2-(2-methylprop-2-enoyloxy)propoxy]propyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCC(C)OCC(C)OC(=O)C(C)=C JFZBUNLOTDDXNY-UHFFFAOYSA-N 0.000 description 1
- ZUOBXYGNVPJKLK-UHFFFAOYSA-N 2-[2-[2-(2-hydroxyethoxy)ethoxy]ethoxy]-1-methoxyethanol;2-methylprop-2-enoic acid Chemical compound CC(=C)C(O)=O.COC(O)COCCOCCOCCO ZUOBXYGNVPJKLK-UHFFFAOYSA-N 0.000 description 1
- WBIOHYFEXBPYSK-UHFFFAOYSA-N 2-[2-[2-(2-hydroxyethoxy)ethoxy]ethoxy]-1-methoxyethanol;prop-2-enoic acid Chemical compound OC(=O)C=C.COC(O)COCCOCCOCCO WBIOHYFEXBPYSK-UHFFFAOYSA-N 0.000 description 1
- HWSSEYVMGDIFMH-UHFFFAOYSA-N 2-[2-[2-(2-methylprop-2-enoyloxy)ethoxy]ethoxy]ethyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCOCCOCCOC(=O)C(C)=C HWSSEYVMGDIFMH-UHFFFAOYSA-N 0.000 description 1
- OWDBMKZHFCSOOL-UHFFFAOYSA-N 2-[2-[2-(2-methylprop-2-enoyloxy)propoxy]propoxy]propyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OC(C)COC(C)COC(C)COC(=O)C(C)=C OWDBMKZHFCSOOL-UHFFFAOYSA-N 0.000 description 1
- TXBCBTDQIULDIA-UHFFFAOYSA-N 2-[[3-hydroxy-2,2-bis(hydroxymethyl)propoxy]methyl]-2-(hydroxymethyl)propane-1,3-diol Chemical compound OCC(CO)(CO)COCC(CO)(CO)CO TXBCBTDQIULDIA-UHFFFAOYSA-N 0.000 description 1
- FDSUVTROAWLVJA-UHFFFAOYSA-N 2-[[3-hydroxy-2,2-bis(hydroxymethyl)propoxy]methyl]-2-(hydroxymethyl)propane-1,3-diol;prop-2-enoic acid Chemical compound OC(=O)C=C.OC(=O)C=C.OC(=O)C=C.OC(=O)C=C.OC(=O)C=C.OCC(CO)(CO)COCC(CO)(CO)CO FDSUVTROAWLVJA-UHFFFAOYSA-N 0.000 description 1
- WROUWQQRXUBECT-UHFFFAOYSA-M 2-ethylacrylate Chemical compound CCC(=C)C([O-])=O WROUWQQRXUBECT-UHFFFAOYSA-M 0.000 description 1
- XMLYCEVDHLAQEL-UHFFFAOYSA-N 2-hydroxy-2-methyl-1-phenylpropan-1-one Chemical compound CC(C)(O)C(=O)C1=CC=CC=C1 XMLYCEVDHLAQEL-UHFFFAOYSA-N 0.000 description 1
- OMIGHNLMNHATMP-UHFFFAOYSA-N 2-hydroxyethyl prop-2-enoate Chemical compound OCCOC(=O)C=C OMIGHNLMNHATMP-UHFFFAOYSA-N 0.000 description 1
- 239000001763 2-hydroxyethyl(trimethyl)azanium Substances 0.000 description 1
- VHSHLMUCYSAUQU-UHFFFAOYSA-N 2-hydroxypropyl methacrylate Chemical compound CC(O)COC(=O)C(C)=C VHSHLMUCYSAUQU-UHFFFAOYSA-N 0.000 description 1
- GWZMWHWAWHPNHN-UHFFFAOYSA-N 2-hydroxypropyl prop-2-enoate Chemical compound CC(O)COC(=O)C=C GWZMWHWAWHPNHN-UHFFFAOYSA-N 0.000 description 1
- VFZKVQVQOMDJEG-UHFFFAOYSA-N 2-prop-2-enoyloxypropyl prop-2-enoate Chemical compound C=CC(=O)OC(C)COC(=O)C=C VFZKVQVQOMDJEG-UHFFFAOYSA-N 0.000 description 1
- UPMLOUAZCHDJJD-UHFFFAOYSA-N 4,4'-Diphenylmethane Diisocyanate Chemical compound C1=CC(N=C=O)=CC=C1CC1=CC=C(N=C=O)C=C1 UPMLOUAZCHDJJD-UHFFFAOYSA-N 0.000 description 1
- DBCAQXHNJOFNGC-UHFFFAOYSA-N 4-bromo-1,1,1-trifluorobutane Chemical compound FC(F)(F)CCCBr DBCAQXHNJOFNGC-UHFFFAOYSA-N 0.000 description 1
- FVCSARBUZVPSQF-UHFFFAOYSA-N 5-(2,4-dioxooxolan-3-yl)-7-methyl-3a,4,5,7a-tetrahydro-2-benzofuran-1,3-dione Chemical compound C1C(C(OC2=O)=O)C2C(C)=CC1C1C(=O)COC1=O FVCSARBUZVPSQF-UHFFFAOYSA-N 0.000 description 1
- RIAHASMJDOMQER-UHFFFAOYSA-N 5-ethyl-2-methyl-1h-imidazole Chemical compound CCC1=CN=C(C)N1 RIAHASMJDOMQER-UHFFFAOYSA-N 0.000 description 1
- 229910015900 BF3 Inorganic materials 0.000 description 1
- 239000004342 Benzoyl peroxide Substances 0.000 description 1
- OMPJBNCRMGITSC-UHFFFAOYSA-N Benzoylperoxide Chemical compound C=1C=CC=CC=1C(=O)OOC(=O)C1=CC=CC=C1 OMPJBNCRMGITSC-UHFFFAOYSA-N 0.000 description 1
- 229920000298 Cellophane Polymers 0.000 description 1
- 235000019743 Choline chloride Nutrition 0.000 description 1
- MQJKPEGWNLWLTK-UHFFFAOYSA-N Dapsone Chemical compound C1=CC(N)=CC=C1S(=O)(=O)C1=CC=C(N)C=C1 MQJKPEGWNLWLTK-UHFFFAOYSA-N 0.000 description 1
- RPNUMPOLZDHAAY-UHFFFAOYSA-N Diethylenetriamine Chemical compound NCCNCCN RPNUMPOLZDHAAY-UHFFFAOYSA-N 0.000 description 1
- JIGUQPWFLRLWPJ-UHFFFAOYSA-N Ethyl acrylate Chemical compound CCOC(=O)C=C JIGUQPWFLRLWPJ-UHFFFAOYSA-N 0.000 description 1
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 1
- LCXXNKZQVOXMEH-UHFFFAOYSA-N Tetrahydrofurfuryl methacrylate Chemical compound CC(=C)C(=O)OCC1CCCO1 LCXXNKZQVOXMEH-UHFFFAOYSA-N 0.000 description 1
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical group ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- DAKWPKUUDNSNPN-UHFFFAOYSA-N Trimethylolpropane triacrylate Chemical compound C=CC(=O)OCC(CC)(COC(=O)C=C)COC(=O)C=C DAKWPKUUDNSNPN-UHFFFAOYSA-N 0.000 description 1
- OKKRPWIIYQTPQF-UHFFFAOYSA-N Trimethylolpropane trimethacrylate Chemical compound CC(=C)C(=O)OCC(CC)(COC(=O)C(C)=C)COC(=O)C(C)=C OKKRPWIIYQTPQF-UHFFFAOYSA-N 0.000 description 1
- ULQMPOIOSDXIGC-UHFFFAOYSA-N [2,2-dimethyl-3-(2-methylprop-2-enoyloxy)propyl] 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCC(C)(C)COC(=O)C(C)=C ULQMPOIOSDXIGC-UHFFFAOYSA-N 0.000 description 1
- GAZZTULIUXRAAI-UHFFFAOYSA-N [2,3-bis(diethylamino)phenyl]-phenylmethanone Chemical compound CCN(CC)C1=CC=CC(C(=O)C=2C=CC=CC=2)=C1N(CC)CC GAZZTULIUXRAAI-UHFFFAOYSA-N 0.000 description 1
- TUOBEAZXHLTYLF-UHFFFAOYSA-N [2-(hydroxymethyl)-2-(prop-2-enoyloxymethyl)butyl] prop-2-enoate Chemical compound C=CC(=O)OCC(CO)(CC)COC(=O)C=C TUOBEAZXHLTYLF-UHFFFAOYSA-N 0.000 description 1
- MPIAGWXWVAHQBB-UHFFFAOYSA-N [3-prop-2-enoyloxy-2-[[3-prop-2-enoyloxy-2,2-bis(prop-2-enoyloxymethyl)propoxy]methyl]-2-(prop-2-enoyloxymethyl)propyl] prop-2-enoate Chemical compound C=CC(=O)OCC(COC(=O)C=C)(COC(=O)C=C)COCC(COC(=O)C=C)(COC(=O)C=C)COC(=O)C=C MPIAGWXWVAHQBB-UHFFFAOYSA-N 0.000 description 1
- 125000005396 acrylic acid ester group Chemical group 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- IMUDHTPIFIBORV-UHFFFAOYSA-N aminoethylpiperazine Chemical compound NCCN1CCNCC1 IMUDHTPIFIBORV-UHFFFAOYSA-N 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- 150000004982 aromatic amines Chemical class 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 1
- 239000012965 benzophenone Substances 0.000 description 1
- 235000019400 benzoyl peroxide Nutrition 0.000 description 1
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 1
- HDJMEHGFRSOUQF-UHFFFAOYSA-N bis(2-prop-2-enoyloxyethyl) benzene-1,3-dicarboxylate Chemical compound C=CC(=O)OCCOC(=O)C1=CC=CC(C(=O)OCCOC(=O)C=C)=C1 HDJMEHGFRSOUQF-UHFFFAOYSA-N 0.000 description 1
- KTWDTBKHNNVDGI-UHFFFAOYSA-N bis(2-prop-2-enoyloxyethyl) benzene-1,4-dicarboxylate Chemical compound C=CC(=O)OCCOC(=O)C1=CC=C(C(=O)OCCOC(=O)C=C)C=C1 KTWDTBKHNNVDGI-UHFFFAOYSA-N 0.000 description 1
- BRFBTKVHBSANSN-UHFFFAOYSA-N bis[2-(2-methylprop-2-enoyloxy)ethyl] benzene-1,2-dicarboxylate Chemical compound CC(=C)C(=O)OCCOC(=O)C1=CC=CC=C1C(=O)OCCOC(=O)C(C)=C BRFBTKVHBSANSN-UHFFFAOYSA-N 0.000 description 1
- XVPDXVZSKZRXGF-UHFFFAOYSA-N bis[2-(2-methylprop-2-enoyloxy)ethyl] benzene-1,3-dicarboxylate Chemical compound CC(=C)C(=O)OCCOC(=O)C1=CC=CC(C(=O)OCCOC(=O)C(C)=C)=C1 XVPDXVZSKZRXGF-UHFFFAOYSA-N 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 150000001728 carbonyl compounds Chemical class 0.000 description 1
- 229960003178 choline chloride Drugs 0.000 description 1
- SGMZJAMFUVOLNK-UHFFFAOYSA-M choline chloride Chemical compound [Cl-].C[N+](C)(C)CCO SGMZJAMFUVOLNK-UHFFFAOYSA-M 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 238000013036 cure process Methods 0.000 description 1
- 150000004985 diamines Chemical class 0.000 description 1
- ZZTCPWRAHWXWCH-UHFFFAOYSA-N diphenylmethanediamine Chemical compound C=1C=CC=CC=1C(N)(N)C1=CC=CC=C1 ZZTCPWRAHWXWCH-UHFFFAOYSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- SUPCQIBBMFXVTL-UHFFFAOYSA-N ethyl 2-methylprop-2-enoate Chemical compound CCOC(=O)C(C)=C SUPCQIBBMFXVTL-UHFFFAOYSA-N 0.000 description 1
- 239000000374 eutectic mixture Substances 0.000 description 1
- 239000012757 flame retardant agent Substances 0.000 description 1
- VOZRXNHHFUQHIL-UHFFFAOYSA-N glycidyl methacrylate Chemical compound CC(=C)C(=O)OCC1CO1 VOZRXNHHFUQHIL-UHFFFAOYSA-N 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 239000003999 initiator Substances 0.000 description 1
- 239000011256 inorganic filler Substances 0.000 description 1
- 229910003475 inorganic filler Inorganic materials 0.000 description 1
- 229940079865 intestinal antiinfectives imidazole derivative Drugs 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 150000002734 metacrylic acid derivatives Chemical class 0.000 description 1
- YDKNBNOOCSNPNS-UHFFFAOYSA-N methyl 1,3-benzoxazole-2-carboxylate Chemical compound C1=CC=C2OC(C(=O)OC)=NC2=C1 YDKNBNOOCSNPNS-UHFFFAOYSA-N 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- ZZSKMNCIAKKVRB-UHFFFAOYSA-N morpholin-4-yl-(2-nitrophenyl)methanone Chemical compound [O-][N+](=O)C1=CC=CC=C1C(=O)N1CCOCC1 ZZSKMNCIAKKVRB-UHFFFAOYSA-N 0.000 description 1
- QOHMWDJIBGVPIF-UHFFFAOYSA-N n',n'-diethylpropane-1,3-diamine Chemical compound CCN(CC)CCCN QOHMWDJIBGVPIF-UHFFFAOYSA-N 0.000 description 1
- RPQRDASANLAFCM-UHFFFAOYSA-N oxiran-2-ylmethyl prop-2-enoate Chemical compound C=CC(=O)OCC1CO1 RPQRDASANLAFCM-UHFFFAOYSA-N 0.000 description 1
- NWVVVBRKAWDGAB-UHFFFAOYSA-N p-methoxyphenol Chemical compound COC1=CC=C(O)C=C1 NWVVVBRKAWDGAB-UHFFFAOYSA-N 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- PNJWIWWMYCMZRO-UHFFFAOYSA-N pent‐4‐en‐2‐one Natural products CC(=O)CC=C PNJWIWWMYCMZRO-UHFFFAOYSA-N 0.000 description 1
- XNGIFLGASWRNHJ-UHFFFAOYSA-L phthalate(2-) Chemical compound [O-]C(=O)C1=CC=CC=C1C([O-])=O XNGIFLGASWRNHJ-UHFFFAOYSA-L 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- FSDNTQSJGHSJBG-UHFFFAOYSA-N piperidine-4-carbonitrile Chemical compound N#CC1CCNCC1 FSDNTQSJGHSJBG-UHFFFAOYSA-N 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920005650 polypropylene glycol diacrylate Polymers 0.000 description 1
- 229920005651 polypropylene glycol dimethacrylate Polymers 0.000 description 1
- NHARPDSAXCBDDR-UHFFFAOYSA-N propyl 2-methylprop-2-enoate Chemical compound CCCOC(=O)C(C)=C NHARPDSAXCBDDR-UHFFFAOYSA-N 0.000 description 1
- PNXMTCDJUBJHQJ-UHFFFAOYSA-N propyl prop-2-enoate Chemical compound CCCOC(=O)C=C PNXMTCDJUBJHQJ-UHFFFAOYSA-N 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000011342 resin composition Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- MUTNCGKQJGXKEM-UHFFFAOYSA-N tamibarotene Chemical compound C=1C=C2C(C)(C)CCC(C)(C)C2=CC=1NC(=O)C1=CC=C(C(O)=O)C=C1 MUTNCGKQJGXKEM-UHFFFAOYSA-N 0.000 description 1
- KKEYFWRCBNTPAC-UHFFFAOYSA-L terephthalate(2-) Chemical compound [O-]C(=O)C1=CC=C(C([O-])=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-L 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- DVKJHBMWWAPEIU-UHFFFAOYSA-N toluene 2,4-diisocyanate Chemical compound CC1=CC=C(N=C=O)C=C1N=C=O DVKJHBMWWAPEIU-UHFFFAOYSA-N 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- UBOXGVDOUJQMTN-UHFFFAOYSA-N trichloroethylene Natural products ClCC(Cl)Cl UBOXGVDOUJQMTN-UHFFFAOYSA-N 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
- G03F7/031—Organic compounds not covered by group G03F7/029
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/28—Applying non-metallic protective coatings
- H05K3/285—Permanent coating compositions
- H05K3/287—Photosensitive compositions
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Epoxy Resins (AREA)
- Non-Metallic Protective Coatings For Printed Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
[発明の目的]
(産業上の利用分野)
本発明は光照射及び加熱により容易に硬化させることが
でき、その硬化膜が優れた機械的特性、電気的特性、耐
熱性、耐湿性及び現像性を有するプリント配線板用のソ
ルダーレジストに関する。[Detailed description of the invention] [Object of the invention] (Industrial application field) The present invention can be easily cured by light irradiation and heating, and the cured film has excellent mechanical properties, electrical properties, and heat resistance. The present invention relates to a solder resist for printed wiring boards that has good properties, moisture resistance, and developability.
(従来の技術)
従来、プリント配線板の製造においては、回路の保護及
び基板に各種の部品をはんだ付する際のブリッジ防止の
ために基板上にソルダーレジストを用いた画像状保護膜
を形成している。(Prior art) Conventionally, in the production of printed wiring boards, an image-shaped protective film using solder resist is formed on the board to protect circuits and prevent bridging when various parts are soldered to the board. ing.
このようなソルダーレジストとしては、一般に熱硬化性
のエポキシ樹脂や光硬化性のアクリレート系又はメタク
リレート系樹脂等を主成分とするものが用いられている
。これらの樹脂のうち、熱硬化性エポキシ樹脂は、電気
的特性、ハンダ耐熱性、耐湿性及び接着剤は優れている
が、しかし、スクリーン印刷法を適用して画像状保護膜
を形成するため、寸法精度が劣ることから高密度で、か
つ微細なパターンの形成ができないという問題点がある
。As such a solder resist, one whose main component is generally a thermosetting epoxy resin or a photocurable acrylate or methacrylate resin is used. Among these resins, thermosetting epoxy resins have excellent electrical properties, soldering heat resistance, moisture resistance, and adhesive properties. There is a problem in that high-density and fine patterns cannot be formed due to poor dimensional accuracy.
また、光硬化性のアクリレー:・系又はメタクリレート
系樹脂は、光照射により短時間で硬化することができる
ため作業性に優れ、画像形成方法としても前記スクリー
ン印刷法又は写真法を適用することができる。In addition, photocurable acrylate or methacrylate resins have excellent workability because they can be cured in a short time by light irradiation, and the above-mentioned screen printing method or photographic method can be applied as an image forming method. can.
この写真法は、プリント配線基板に積層された光硬化性
樹脂を含むレジストを、ネガマスクを通して露光したの
ち、未露光部を溶剤で除去して。In this photography method, a resist containing a photocurable resin layered on a printed wiring board is exposed through a negative mask, and then the unexposed areas are removed with a solvent.
ネガマスクに対応する画像を形成する方法であり。This is a method of forming an image corresponding to a negative mask.
高い寸法精度の画像を得ることができるため、高密度微
細パターンの形成方法として好ましいものである。この
ように光硬化性アクリレート系樹脂は、ソルダーレジス
ト材料として優れた性質を有しているが、電気的特性、
ハンダ耐熱性及び耐湿性等の点で充分に満足することが
できない。Since it is possible to obtain images with high dimensional accuracy, this method is preferable as a method for forming high-density fine patterns. As described above, photocurable acrylate resin has excellent properties as a solder resist material, but its electrical properties
The solder heat resistance, moisture resistance, etc. cannot be fully satisfied.
上記のソルダーレジストの問題点を解消するものとして
2特開昭60−208377号公報では、フェノールノ
ボラック型エポキシ樹脂と不飽和塩基酸の反応生成物、
クレゾールノボラック型エポキシ樹脂と不飽和塩基酸の
反応生成物、有機溶剤、光重合開始剤及びアミン系硬化
剤からなる樹脂組成物が開示されている。しかしながら
ここで用いているフェノールノボラック型エポキシ樹脂
は、クレゾールノボラック型エポキシ樹脂に比べ有機溶
剤に対する溶解度が低く、これに不飽和塩基酸を反応さ
せて得た反応生成物はさらに溶解度が低下する。そのた
め上記の組成物をソルダーレジストとして用いる場合は
現像液として利用できる溶剤の種類が制限される。すな
わち、プリント配線板の製造工程上の安全確保の点から
汎用されている。1,1.1−トリクロロエタン、トリ
クロロエチレン、及びテトラクロロエタン等の不燃性現
像液に対しては溶解し難いことや、溶解性が劣るため現
像に要する時間が長くかかりすぎることなどの問題点が
あり、このことは実際の作業においても大きな支障とな
っている。In order to solve the above-mentioned problems with the solder resist, JP-A-60-208377 discloses a reaction product of a phenol novolac type epoxy resin and an unsaturated basic acid,
A resin composition comprising a reaction product of a cresol novolac type epoxy resin and an unsaturated basic acid, an organic solvent, a photopolymerization initiator, and an amine curing agent is disclosed. However, the phenol novolac type epoxy resin used here has lower solubility in organic solvents than the cresol novolac type epoxy resin, and the solubility of the reaction product obtained by reacting it with an unsaturated basic acid further decreases. Therefore, when the above composition is used as a solder resist, the types of solvents that can be used as a developer are limited. That is, it is widely used from the viewpoint of ensuring safety in the manufacturing process of printed wiring boards. There are problems such as difficulty in dissolving in nonflammable developers such as 1,1.1-trichloroethane, trichloroethylene, and tetrachloroethane, and the time required for development due to poor solubility. This is also a major hindrance in actual work.
(発明が解決しようとする問題点)
上記のように従来の光硬化型のソルダーレジストは、こ
れを用いて画像を形成する場合における現像性や寸法精
度が劣っており、また、該レジストの硬化膜の電気的特
性、単用耐熱性及び耐湿性等の点で充分ではなかった。(Problems to be Solved by the Invention) As mentioned above, conventional photocurable solder resists have poor developability and dimensional accuracy when forming images using them, and also have The membrane's electrical properties, single-use heat resistance, moisture resistance, etc. were not sufficient.
したがって、本発明は上記の問題点を解消すると共に、
さらに優れた機械的特性をも併有するソルダーレジスト
の提供を目的とする。Therefore, the present invention solves the above problems and also
The object of the present invention is to provide a solder resist that also has excellent mechanical properties.
[発明の構成コ
本発明は、ソルダーレジストの主要成分としてクレゾー
ルノボラック型エポキシ樹脂の1エポキシ当量に対して
0.3〜0.8当量のアクリル酸及び/又はメタクリル
酸が付加されている部分アクリル化及び/又はメタクリ
ル化タレゾールノボラック型エポキシ樹脂並びに少なく
とも1個のイソシアヌル環及び少なくとも3個のイソシ
アネート基を含有するジイソシアネートの三量体と、少
なくとも2個のアゲIJQイル基及び/又はメタクリロ
イル基と少なくとも1個の水酸基を含有する化合物との
反応生成物を含有させることにより上記の目的を達成す
るものである。[Structure of the Invention] The present invention provides a partial acrylic resin to which 0.3 to 0.8 equivalents of acrylic acid and/or methacrylic acid is added per 1 epoxy equivalent of a cresol novolac type epoxy resin as a main component of a solder resist. and/or methacrylated Talesol novolac type epoxy resin; a trimer of diisocyanate containing at least one isocyanuric ring and at least three isocyanate groups; and at least two Agel IJQyl groups and/or methacryloyl groups. The above object is achieved by containing a reaction product with a compound containing at least one hydroxyl group.
本発明のソルダーレジストを構成する第1の成分である
(a)部分アクリル化及び/又はメタクリル化エポキシ
樹脂は、クレゾールノボラック型エポキシ樹脂にアクリ
ル酸もしくはメタクリル酸又はこれらの混合物を付加反
応させて得られるものである。(a) Partially acrylated and/or methacrylated epoxy resin, which is the first component constituting the solder resist of the present invention, is obtained by subjecting a cresol novolak type epoxy resin to an addition reaction with acrylic acid, methacrylic acid, or a mixture thereof. It is something that can be done.
この場合に使用することができるエポキシ樹脂は、クレ
ゾールノボラック型に限られ、他の型のエポキシ樹脂、
例えばビスフェノールA型、ビスフェノールF型、フェ
ノールノボラック型、水添ビスフェノールA型及び芳香
族カルボン酸のジグリシジルエステル型等のエポキシ樹
脂を使用して得られた部分アクリル化及び/又はメタク
リル化エポキシ樹脂を原料としたソルダーレジストは。The epoxy resins that can be used in this case are limited to cresol novolak type, other types of epoxy resins,
For example, partially acrylated and/or methacrylated epoxy resins obtained using epoxy resins such as bisphenol A type, bisphenol F type, phenol novolac type, hydrogenated bisphenol A type, and diglycidyl ester type of aromatic carboxylic acids. The solder resist used as raw material.
硬化膜のハンダ耐熱性が劣るために使用できない。Cannot be used because the cured film has poor solder heat resistance.
反応方法は常法によって行うことができ、反応に際して
はクレゾールノボラック型エポキシ樹脂の1エポキシ当
量に対して、アクリル酸等を0.3〜0.8当量、好ま
しくは0.4〜0.8当量用いて付加反応させる。反応
に用いるアクリル酸等の当量が0.3未満の場合は、得
られたエポキシ樹脂の光硬化性が劣り、現像後のアフタ
ーキュアーの過程で硬化膜にふくれ等が生じる。また、
0.8を超える場合は、通常用いられる1、1.1−ト
リクロロエタン95%以上を含有する現像液を用いた場
合、現像性が極端に低下してしまう。The reaction method can be carried out by a conventional method, and in the reaction, 0.3 to 0.8 equivalents of acrylic acid etc., preferably 0.4 to 0.8 equivalents, per 1 epoxy equivalent of the cresol novolac type epoxy resin. Addition reaction is carried out using If the equivalent weight of acrylic acid or the like used in the reaction is less than 0.3, the resulting epoxy resin will have poor photocurability, and blisters will occur in the cured film during the after-cure process after development. Also,
If it exceeds 0.8, developability will be extremely reduced when a commonly used developer containing 95% or more of 1,1,1-trichloroethane is used.
このようにエポキシ樹脂に反応させるアクリル酸等の量
は上記範囲内で規定されるが、この反応量を適宜変更さ
せることによって、所望のアクリル化率又はメタクリル
化率のエポキシ樹脂を得ることができる。このアクリル
化率は、現像液の種類に応じて適宜調整することによっ
て、現像性を向上させることができる。例えば、トリク
ロロエタン−アルコール系複合現像液を用いる場合は。The amount of acrylic acid, etc. reacted with the epoxy resin is defined within the above range, but by appropriately changing this reaction amount, an epoxy resin with a desired acrylation rate or methacrylation rate can be obtained. . The developability can be improved by appropriately adjusting this acrylation rate depending on the type of developer. For example, when using a trichloroethane-alcohol complex developer.
エポキシ樹脂のアクリル化率を80%程度に調整し、ま
たトリクロロエタンを現像液として用いる場合は、アク
リル化率を50%程度に調整することができる。When the acrylation rate of the epoxy resin is adjusted to about 80% and trichloroethane is used as a developer, the acrylation rate can be adjusted to about 50%.
本発明のソルダーレジストを構成する第2の成分である
(b)少なくとも1個のイソシアヌル環及び少なくとも
3個のインシアネート基を含有するジイソシアネートの
三量体と、少なくとも2個の7クリロイル基及び/又は
メタクリロイル基と少なくとも1個の水酸基を含有する
化合物との反応生成物は1本発明のソルダーレジストに
対して露光時における優れた感度を付与することができ
るものであり、また有機溶剤に対する溶解性が高いこと
から現像性にも優れている。さらには加熱硬化後の硬化
膜に優れた耐熱性、表面硬度及び耐溶剤性を付加するこ
ともできる。The second component constituting the solder resist of the present invention (b) is a trimer of diisocyanate containing at least one isocyanuric ring and at least three incyanate groups, and at least two 7-acryloyl groups and/or Alternatively, a reaction product of a methacryloyl group and a compound containing at least one hydroxyl group can provide the solder resist of the present invention with excellent sensitivity during exposure, and also has excellent solubility in organic solvents. It also has excellent developability due to its high . Furthermore, excellent heat resistance, surface hardness, and solvent resistance can be added to the cured film after heat curing.
この(b)成分である反応生成物の一方の合成原料であ
るジイソシアネートとしては、脂肪族ジイソシアネート
、芳香族ジイソシアネートのいずれも使用可能であり、
脂肪族ジイソシアネートとしては、例えば2,2・−イ
ソシアナトエタン、■、3−ジイソシアナトプロパン、
1,4−ジイソシアナトブタン、1,5−ジイソシアナ
トペンタン、1,6−ジイソシアナトブタン、1.7−
ジイツシアナトへブタン等を挙げることができ、芳香族
シイシアネートとしては例えば2.4−トリレンジイソ
シアナート、2゜6−トリレンジイソシアナート、3,
3−ビトリレン−4゜4′−ジイソシアナート、ジフェ
ニルメタン−4,4−ジイソシアナート、3,3ξジメ
チルジフェニルメタン−4,4′−ジイソシアナート等
を挙げることができる。As the diisocyanate which is a raw material for synthesis of one of the reaction products which is component (b), either aliphatic diisocyanate or aromatic diisocyanate can be used.
Examples of aliphatic diisocyanates include 2,2-isocyanatoethane, 3-diisocyanatopropane,
1,4-diisocyanatobutane, 1,5-diisocyanatopentane, 1,6-diisocyanatobutane, 1.7-
Examples of aromatic silicyanates include 2,4-tolylene diisocyanate, 2゜6-tolylene diisocyanate, 3,
Examples include 3-bitrylene-4°4'-diisocyanate, diphenylmethane-4,4-diisocyanate, and 3,3ξdimethyldiphenylmethane-4,4'-diisocyanate.
また、少なくとも2個のアクリル基及び/又はメタクリ
ル基と少なくとも1個の水酸基を含む化合物としては、
グリセリンジアクリレート、トリメチロールプロパンジ
アクリレート、ペンタエリスリトールトリアクリレート
及びジペンタエリスリトールペンタアクリレート等並び
にこれらに対応するメタクリレートを挙げることができ
る。また、上記の化合物は、1つの化合物中にアクリロ
イル基とメタクリロイル基の両方を含むこともできる。In addition, compounds containing at least two acrylic groups and/or methacrylic groups and at least one hydroxyl group include:
Mention may be made of glycerin diacrylate, trimethylolpropane diacrylate, pentaerythritol triacrylate, dipentaerythritol pentaacrylate, and the corresponding methacrylates. Moreover, the above-mentioned compound can also contain both an acryloyl group and a methacryloyl group in one compound.
(b)成分の(a)成分に対する配合割合は(a)成分
1.00重量部に対して5〜80重量部、好ましくは1
0〜50重量部である配合割合が5重量部未満の場合は
ソルダーレジストの光硬化性が劣り、感度が低下し、ま
た加熱硬化後得られた硬化膜の表面硬度、耐熱性、耐溶
剤性が低下する。また配合割合が80重量部を超える場
合は。The mixing ratio of component (b) to component (a) is 5 to 80 parts by weight, preferably 1 part by weight per 1.00 parts by weight of component (a).
If the blending ratio of 0 to 50 parts by weight is less than 5 parts by weight, the photocurability of the solder resist will be poor, the sensitivity will decrease, and the surface hardness, heat resistance, and solvent resistance of the cured film obtained after heat curing will be poor. decreases. Moreover, when the blending ratio exceeds 80 parts by weight.
加熱硬化後に得られた硬化膜の柔軟性が失われ、コハン
目テストの際切り口の割れを生じるようになり、さらに
露光時においてソルダーレジストがネガマスク側に移行
することなどの弊害を生じる。The cured film obtained after heat curing loses its flexibility, causing cracks at the cut edges during the kernel test, and furthermore causes problems such as migration of the solder resist to the negative mask side during exposure.
本発明のソルダーレジストを構成する第3の成分である
(Q)光増感剤は、光照射により(a)及び(b)成分
を重合せしめる成分であり、この光増感剤としては特に
制限されないが、例えば、ビスアセチル、アセトフェノ
ン、ベンゾフェノン、ベンジル、ベンゾインイソブチル
エーテル、ベンジルジメチルケタール、ベンゾイルペル
オキシド、(1−ヒドロキシシクロヘキシル)フェニル
ケトン、(1−ヒドロキシ−1−メチルエチル)フェニ
ルケトン、p−イソプロピル−α−ヒドロキシイソブチ
ルフェノン等のカルボニル化合物ニジエチルチオキサン
トン、エチルアンスラキノン等のケトン類と、ビス(ジ
エチルアミノ)ベンゾフェノン、エチル(ジエチルアミ
ノ)ベンゾエート、ベンジルジメチルアミン、トリエタ
ノールアミン等のアミン類との複合系光増感剤を挙げる
ことができる。The photosensitizer (Q), which is the third component constituting the solder resist of the present invention, is a component that polymerizes components (a) and (b) by irradiation with light, and there are no particular restrictions on this photosensitizer. However, for example, bisacetyl, acetophenone, benzophenone, benzyl, benzoin isobutyl ether, benzyl dimethyl ketal, benzoyl peroxide, (1-hydroxycyclohexyl) phenyl ketone, (1-hydroxy-1-methylethyl) phenyl ketone, p-isopropyl - Complex system of carbonyl compounds such as α-hydroxyisobutylphenone, ketones such as diethylthioxanthone, and ethyl anthraquinone, and amines such as bis(diethylamino)benzophenone, ethyl(diethylamino)benzoate, benzyldimethylamine, and triethanolamine. Mention may be made of photosensitizers.
(Q)成分の(a)成分に対する配合割合は、(a)成
分100重量部に対して2〜15重量部、好ましくは5
〜10重量部である。配合割合が2重量部未満の場合は
、(a)及び(b)成分の光硬化性が劣り、配合割合が
15重量部を超える場合は、該レジスト硬化物の耐熱性
、耐湿性及び電気特性が劣化する。The mixing ratio of component (Q) to component (a) is 2 to 15 parts by weight, preferably 5 parts by weight per 100 parts by weight of component (a).
~10 parts by weight. If the blending ratio is less than 2 parts by weight, the photocurability of components (a) and (b) will be poor, and if the blending ratio exceeds 15 parts by weight, the heat resistance, moisture resistance, and electrical properties of the cured resist product will deteriorate. deteriorates.
本発明のソルダーレジストを構成する第4の成分である
(d)熱硬化剤は、加熱により(a)成分である部分ア
クリル化及び/又はメタクリル化エポキシ樹脂中のエポ
キシ基を架橋反応させることにより該樹脂に、優れた耐
熱性、電気的特性及び耐湿性等を付与する成分である。The thermosetting agent (d), which is the fourth component constituting the solder resist of the present invention, is produced by crosslinking the epoxy groups in the partially acrylated and/or methacrylated epoxy resin, which is the component (a), by heating. It is a component that imparts excellent heat resistance, electrical properties, moisture resistance, etc. to the resin.
この(d)成分としては特に制限されないが1例えばジ
エチレントリアミン、トリエチレンテトラミン、ジエチ
ルアミノプロピルアミン、N−アミノエチルピペラジン
、ベンジルジメチルアミン、トリス(ジメチルアミノメ
チル)フェノール(DMP−30)。Component (d) is not particularly limited, but includes, for example, diethylenetriamine, triethylenetetramine, diethylaminopropylamine, N-aminoethylpiperazine, benzyldimethylamine, and tris(dimethylaminomethyl)phenol (DMP-30).
DMP−30−トリ(2−エチルアクリレート)2、ヘ
タフェニレンジアミン、ジアミノジフェニルメタン、ジ
アミノジフェニルスルホン、芳香族アミン共融混合変性
硬化剤;ポリアミド樹脂、ジシアンジアミド、三弗化は
う素、モノエチルアミン、メタンジアミン、キシレンジ
アミン、ビスアミノプロピルテトラオキサスピロウンデ
カン付加物等のアミン誘導体、エチルメチルイミダゾー
ル等イミダゾール誘導体;等を挙げることができ、これ
らは1種以上で用いることができる。DMP-30-tri(2-ethyl acrylate) 2, hetaphenylenediamine, diaminodiphenylmethane, diaminodiphenylsulfone, aromatic amine eutectic mixture modified curing agent; polyamide resin, dicyandiamide, boron trifluoride, monoethylamine, methane Examples include amine derivatives such as diamine, xylene diamine, bisaminopropyltetraoxaspirone undecane adduct, and imidazole derivatives such as ethylmethylimidazole; one or more of these may be used.
(d)成分の(a)成分に対する配合割合は、(a)成
分100重量部に対して、0.5〜5重量部、好ましく
は2〜4重量部である。配合割合が0.5重量部未満の
場合は、(a)成分の硬化性が劣り、また5重量部を超
える場合は、耐熱性が劣り、ソルダーレジストの劣化が
早く、また製造コストが上昇してしまう。The mixing ratio of component (d) to component (a) is 0.5 to 5 parts by weight, preferably 2 to 4 parts by weight, per 100 parts by weight of component (a). If the blending ratio is less than 0.5 parts by weight, the curing properties of component (a) will be poor, and if it exceeds 5 parts by weight, the heat resistance will be poor, the solder resist will deteriorate quickly, and the manufacturing cost will increase. I end up.
本発明のソルダーレジストにあっては、その構成成分と
して上記(a)〜(d)の各成分以外に、アクリロイル
基及び/又はメタクリロイル基を有する化合物を含有さ
せることもできる。この化合物は、ソルダーレジストの
粘度調節1表面硬化性の向上及び光硬化性の向上や、硬
化物に可とう性を付与することを目的として使用するも
のであり。In the solder resist of the present invention, a compound having an acryloyl group and/or a methacryloyl group can also be included as a constituent component in addition to the components (a) to (d) above. This compound is used for the purpose of adjusting the viscosity of the solder resist, improving the surface curability, improving the photocurability, and imparting flexibility to the cured product.
このような化合物としては(a)成分と共重合し得るも
のが望ましい。これは、該化合物が(a)成分と共重合
し得ない場合は、硬化物の電気的特性、半田耐熱性、耐
湿性及び耐溶剤性等を著しく低下させるためである。こ
のようなアクリロイル基及び/又はメタクリロイル基を
有する化合物としては、一般に知られているアクリル酸
エステル。Such a compound is preferably one that can be copolymerized with component (a). This is because if the compound cannot copolymerize with component (a), the electrical properties, soldering heat resistance, moisture resistance, solvent resistance, etc. of the cured product will be significantly reduced. Acrylic acid esters are generally known as compounds having such an acryloyl group and/or methacryloyl group.
メタクリル酸エステル、アクリレート系樹脂及びメタク
リレート系樹脂を用いることができる。Methacrylic esters, acrylate resins, and methacrylate resins can be used.
その具体例としては、メチルアクリレート、エチルアク
リレート、プロピルアケリレート、2−ヒドロキシエチ
ルアクリレート、2・−ヒドロキシプロピルアクリレー
ト、2−ヒドロキシ−3−フェノキシプロピルアクリレ
ート、テトラヒドロフルフリルアクリレート、メチルメ
タクリレート、エチルメタクリレート、プロピルメタリ
レート、2−ヒドロキシエチルメタクリレート、2−ヒ
ドロキシプロピルメタクリレート、2−ヒドロキシ−3
−フェノキシプロピルメタクリレート、テトラヒドロフ
ルフリルメタクリレート、メトキシジエチレングリコー
ルメタクリレート、メトキシジエチレングリコールアク
リレート、メトキシテトラエチレングリコールメタクリ
レート、メトキシテトラエチレングリコールアクリレー
ト、フェノキシエチルオキシエチルメタクリレート、フ
ェノキシエチルオキシエチルアクリレート、フェノキシ
ポリエチレングリコールメタクリレート、フェノキシポ
リエチレングリコールアクリレート、3−クロロ−2−
ヒドロキシプロピルメタクリレート、3−クロロ−2−
ヒドロキシプロピルアクリレート、エチレングリコール
ジアクリレート、エチレングリコールジメタクリレート
、ジエチレングリコールジメタクリレート、ジエチレン
グリコールジアクリレート、ジエチレングリコールジメ
タクリレート、トリエチレングリコールジアクリレート
、トリエチレングリコールジメタクリレート、ポリエチ
レングリコールジアクリレート、ポリエチレングリコー
ルジメタクリレート、プロピレングリコールジアクリレ
ート、プロピレングリコールジメタクリレート、ジプロ
ピレングリコールジアクリレート、ジプロピレングリコ
ールジメタクリレート、トリプロピレングリコールジア
クリレート、トリプロピレングリコールジメタクリレー
ト、ポリプロピレングリコールジアクリレート、ポリプ
ロピレングリコールジメタクリレート。Specific examples include methyl acrylate, ethyl acrylate, propyl acrylate, 2-hydroxyethyl acrylate, 2-hydroxypropyl acrylate, 2-hydroxy-3-phenoxypropyl acrylate, tetrahydrofurfuryl acrylate, methyl methacrylate, ethyl methacrylate, Propyl methacrylate, 2-hydroxyethyl methacrylate, 2-hydroxypropyl methacrylate, 2-hydroxy-3
- Phenoxypropyl methacrylate, tetrahydrofurfuryl methacrylate, methoxydiethylene glycol methacrylate, methoxydiethylene glycol acrylate, methoxytetraethylene glycol methacrylate, methoxytetraethylene glycol acrylate, phenoxyethyloxyethyl methacrylate, phenoxyethyloxyethyl acrylate, phenoxypolyethylene glycol methacrylate, phenoxypolyethylene glycol Acrylate, 3-chloro-2-
Hydroxypropyl methacrylate, 3-chloro-2-
Hydroxypropyl acrylate, ethylene glycol diacrylate, ethylene glycol dimethacrylate, diethylene glycol dimethacrylate, diethylene glycol diacrylate, diethylene glycol dimethacrylate, triethylene glycol diacrylate, triethylene glycol dimethacrylate, polyethylene glycol diacrylate, polyethylene glycol dimethacrylate, propylene glycol Diacrylate, propylene glycol dimethacrylate, dipropylene glycol diacrylate, dipropylene glycol dimethacrylate, tripropylene glycol diacrylate, tripropylene glycol dimethacrylate, polypropylene glycol diacrylate, polypropylene glycol dimethacrylate.
1.4−ブチレンゲリコールジアクリレート、1゜4−
ブチレンゲリコールジメタクリレート、l、6−ヘキサ
ンジオールジアクリレート、1,6−ヘキサンジオール
ジアクリレート、ネオペンチルグリコールジアクリレー
ト、ネオペンチルグリコールジメタクリレート、2−ヒ
ドロキシ−1,3−ジアクリロキシープロパン、2−ヒ
ドロキシ−1,3−ジメタクリロキジ−プロパン、2,
2−ビス[4−(アクリロキシジェトキシ)フェニル]
プロパン、2.2−ビス[4−(メタクリロキシジェト
キシ)フェニル]プロパン、トリメチロールプロパント
リアクリレート、トリメチロールプロパントリメタクリ
レート、テトラメチロールメタントリアクリレート、テ
トラメチロールメタンテトラメタクリレート、テトラメ
チロールメタンテトラアクリレート、テトラメチロール
メタンテトラメタクリレート、ポリエステルジアクリレ
ート、ポリエステルジメタクリレート、ジペンタエリス
リトールへキサアクリレート、ジペンタエリスリトール
へキサメタクリレート、トリ(メタクリロキシエトキシ
)シアヌレート、トリ(アクリロキシジェトキシ)シア
ヌレート、トリ(メタクリロキシジェトキシ)シアヌレ
ート、トリ(1,3−ジアクリロキシー2−プロポキシ
)シアヌレート、トリ(1゜3−ジメタクリロキシー2
−プロポキシ)シアヌレート、トリ(2−アクリロキシ
エチル)フタレート、ジ(2−メタクリロキシエチル)
フタレート、ジ(2−アクリロキシエチル)イソフタレ
ート、ジ(2−メタクリロキシエチル)イソフタレート
、ジ(2−アクリロキシエチル)テレフタレート、ジ(
2−メタクリロキシエチル)テレフタレート、グリシジ
ルアクリレート、グリシジルメタクリレート等を挙げる
ことができ、これらは1種以上で用いることができる。1.4-Butylene gelicol diacrylate, 1゜4-
Butylene gelicol dimethacrylate, 1,6-hexanediol diacrylate, 1,6-hexanediol diacrylate, neopentyl glycol diacrylate, neopentyl glycol dimethacrylate, 2-hydroxy-1,3-diacryloxypropane, 2 -Hydroxy-1,3-dimethacrylokydi-propane, 2,
2-bis[4-(acryloxyjethoxy)phenyl]
Propane, 2,2-bis[4-(methacryloxyjethoxy)phenyl]propane, trimethylolpropane triacrylate, trimethylolpropane trimethacrylate, tetramethylolmethane triacrylate, tetramethylolmethanetetramethacrylate, tetramethylolmethanetetraacrylate, Tetramethylolmethane tetramethacrylate, polyester diacrylate, polyester dimethacrylate, dipentaerythritol hexaacrylate, dipentaerythritol hexamethacrylate, tri(methacryloxyethoxy) cyanurate, tri(acryloxyjethoxy) cyanurate, tri(methacryloxyjethoxy) cyanurate Toxy) cyanurate, tri(1,3-diacryloxy 2-propoxy) cyanurate, tri(1゜3-dimethacryloxy 2)
-propoxy) cyanurate, tri(2-acryloxyethyl) phthalate, di(2-methacryloxyethyl)
Phthalate, di(2-acryloxyethyl) isophthalate, di(2-methacryloxyethyl) isophthalate, di(2-acryloxyethyl) terephthalate, di(
Examples include 2-methacryloxyethyl) terephthalate, glycidyl acrylate, and glycidyl methacrylate, and one or more of these can be used.
このアクリロイル基及び/又はメタクリロイル基を有す
る化合物の配合割合は、(a)〜(d)成分の合計量1
00重量部に対して0〜20重量部、好ましくは0〜1
5重量部である。配合割合が20重量部を超える場合は
、硬化膜の電気的特性、耐熱性及び耐湿性等が低下する
。The compounding ratio of this compound having an acryloyl group and/or methacryloyl group is the total amount of components (a) to (d) 1
0 to 20 parts by weight, preferably 0 to 1 part by weight
5 parts by weight. If the blending ratio exceeds 20 parts by weight, the electrical properties, heat resistance, moisture resistance, etc. of the cured film will deteriorate.
また、本発明のソルダーレジストには、さらに必要に応
じて、難燃性付与剤、染料、顔料、レベリング剤、消泡
剤、無機質充填剤、密着性付与剤。In addition, the solder resist of the present invention further contains a flame retardant agent, a dye, a pigment, a leveling agent, an antifoaming agent, an inorganic filler, and an adhesion agent, if necessary.
重合禁止剤、溶剤等を配合することができるが、その配
合割合はソルダーレジスト重量に対して50重量%以下
、好ましくは40重量%以下である。Polymerization inhibitors, solvents, etc. can be blended, but the blending ratio is 50% by weight or less, preferably 40% by weight or less, based on the weight of the solder resist.
配合割合が50重量%を超える場合は、レジストの硬化
性が劣るため好ましくない。If the blending ratio exceeds 50% by weight, the curing properties of the resist will be poor, which is not preferable.
本発明のソルダーレジストは、(a)〜(d)の各成分
及び必要に応じてさらに他の成分を添加し、均一になる
まで混合することによって得ることができる。The solder resist of the present invention can be obtained by adding each of the components (a) to (d) and other components as necessary and mixing them until uniform.
本発明のソルダーレジストを用いてプリント配線板を製
造するに際しては、スクリーン印刷法又は写真法のいず
れの方法も適用することができる。When manufacturing a printed wiring board using the solder resist of the present invention, either a screen printing method or a photographic method can be applied.
これらの方法において、露光時に用いる光は、その波長
が通常は180〜700nm、好ましくは180〜40
0nmである。また、加熱硬化時の温度は通常50〜2
20℃、好ましくは100〜200’Cである。In these methods, the wavelength of the light used during exposure is usually 180 to 700 nm, preferably 180 to 40 nm.
It is 0 nm. In addition, the temperature during heat curing is usually 50 to 2
20°C, preferably 100-200'C.
(実施例)
以下に実施例及び比較例を掲げ、本発明をさらに詳述す
る。なお、実施例及び比較例中「部」は全て「重量部」
を表す。(Example) The present invention will be further explained in detail with reference to Examples and Comparative Examples below. In addition, all "parts" in Examples and Comparative Examples are "parts by weight."
represents.
実施例1
エピクロンN−673(商品名:大日本インキ(株)製
;クレゾールノボラック型エポキシ樹脂)1000部及
びn−ブチルセロソルブ100部を120℃に加熱し、
溶解させたのち、さらにp−メトキシフェノール1部及
びトリフェニルホスフィン5部を加えて溶解させた。次
いで、該溶液中に空気を送り込みながら温度を95℃に
維持し、アクリル酸170部を加えた。その後、この温
度で6時間反応させたのち、ジメチルホルムアミド10
0部を加え室温まで冷却し、50%アクリル化エポキシ
樹脂を得た。Example 1 1000 parts of Epiclon N-673 (trade name: manufactured by Dainippon Ink Co., Ltd.; cresol novolak type epoxy resin) and 100 parts of n-butyl cellosolve were heated to 120°C,
After dissolving, 1 part of p-methoxyphenol and 5 parts of triphenylphosphine were further added and dissolved. Next, 170 parts of acrylic acid was added while blowing air into the solution while maintaining the temperature at 95°C. Then, after reacting at this temperature for 6 hours, dimethylformamide 10
0 parts was added and cooled to room temperature to obtain a 50% acrylated epoxy resin.
次いで本発明のソルダーレジストを製造した。Next, a solder resist of the present invention was manufactured.
まず、上記の50%アクリル化エポキシ樹脂100部、
■、6−ジイツシアナトヘキサンの三量体とグリセリン
ジアクリレートとの反応生成物であるアクリル樹脂20
部、n−ブチルセロソルブ5部、ジメチルホルムアミド
10部、フタロシアニングリーン1.5部、シリカ粉末
2部、タルク20部、ベンジルジメチルケタール5部及
びジシアンジアミド2部を混合し、さらにロールで混練
し、ソルダーレジストを得た。このレジストの粘度は2
5°Cで140cPsであった。First, 100 parts of the above 50% acrylated epoxy resin,
■Acrylic resin 20 which is a reaction product of 6-dicyanatohexane trimer and glycerin diacrylate
5 parts of n-butyl cellosolve, 10 parts of dimethylformamide, 1.5 parts of phthalocyanine green, 2 parts of silica powder, 20 parts of talc, 5 parts of benzyl dimethyl ketal, and 2 parts of dicyandiamide, and further kneaded with a roll to form a solder resist. I got it. The viscosity of this resist is 2
It was 140 cPs at 5°C.
このソルダーレジストをIPC−B−25試験回路基板
の全面に均一となるように塗布したのち、80℃で1時
間乾燥し、次いでネガアスクを介して高圧水銀ランプに
よって照度10mW/cnの紫外線により露光した。次
いで、1,1.1−トリクロロエタンを用いて30秒間
現像したのち150℃で1時間加熱硬化させた。その結
果、ネガマスクに対応した正確な硬化膜が得られた。こ
の回路基板について下記の各試験を行った。結果を表に
示す。This solder resist was applied uniformly over the entire surface of the IPC-B-25 test circuit board, dried at 80°C for 1 hour, and then exposed to ultraviolet light at an illuminance of 10 mW/cn using a high-pressure mercury lamp through a negative ask. . Next, the film was developed using 1,1,1-trichloroethane for 30 seconds, and then heated and cured at 150°C for 1 hour. As a result, an accurate cured film compatible with negative masks was obtained. The following tests were conducted on this circuit board. The results are shown in the table.
(イ)ゴバン目テープ剥離試験:JISD−0202の
試験法に準じ、試験片にゴバン目状のクロスカットを入
れたのち、セロハンテープによるピーリングテストを行
った。(a) Crosscut tape peeling test: According to the test method of JISD-0202, a crosscut in the shape of a crosscut was made on a test piece, and then a peeling test using cellophane tape was performed.
(ロ)鉛筆硬度;260℃の半田浴中に、1回20秒間
で合計3回浸漬したのちの塗膜の外観上及び接着性の変
化を観察した。(b) Pencil hardness: Changes in appearance and adhesiveness of the coating film were observed after immersion in a solder bath at 260° C. for a total of three times for 20 seconds each time.
(ニ)絶縁性:(i)IPC−8M−840metho
d2.5.23による常態及び(ii)50℃で相対湿
度95%の雰囲気中で7日間保持したのちの電気抵抗を
測定した。(d) Insulation: (i) IPC-8M-840metho
Electrical resistance was measured under normal conditions according to d2.5.23 and (ii) after being held for 7 days in an atmosphere of 50° C. and 95% relative humidity.
実施例2
エピクロンN−673,1000部及びトルエン100
部を120℃で溶解させたのち、さらにD−メトキシフ
ェノール1部、塩化コリン10部及びアクリル酸170
部を加えたのち、95℃で4時間反応させた。その後反
応液を水洗後、残留している水及びトルエンを除去した
のち、n−ブチルセロソルブ100部及びジメチルホル
ムアミド100部を加え、さらに残留しているトルエン
を除去したのち室温まで冷却し1部分アクリル化エポキ
シ樹脂を得た。Example 2 Epicron N-673, 1000 parts and toluene 100
1 part of D-methoxyphenol, 10 parts of choline chloride and 170 parts of acrylic acid were dissolved at 120°C.
After adding 50% of the mixture, the mixture was reacted at 95°C for 4 hours. After washing the reaction solution with water and removing remaining water and toluene, 100 parts of n-butyl cellosolve and 100 parts of dimethylformamide were added, and after further removing remaining toluene, it was cooled to room temperature and partially acrylated. An epoxy resin was obtained.
次いで、上記方法で得られたアクリル化エポキシ樹脂を
用い、他の成分は実施例1と同様にしてソルダーレジス
トを得た。このレジストの粘度は25℃で153cPs
であった。このソルダーレジストを用い実施例1と同様
にして塗布、乾燥、露光、現像及び加熱硬化の各処理を
行った。その結果、ネガマスクに対応した正確な硬化膜
が得られた。また、この硬化膜について実施例1と同様
の(イ)〜(ニ)の各試験を行った。結果を表に示す。Next, a solder resist was obtained using the acrylated epoxy resin obtained by the above method and using the same method as in Example 1 except for the other components. The viscosity of this resist is 153 cPs at 25°C.
Met. Using this solder resist, coating, drying, exposure, development, and heat curing were performed in the same manner as in Example 1. As a result, an accurate cured film compatible with negative masks was obtained. Further, each of the tests (a) to (d) similar to those in Example 1 were conducted on this cured film. The results are shown in the table.
実施例3
アクリル酸の添加量を238部とした以外は、実施例2
と同様にして70%アクリル化エポキシ樹脂を得た。Example 3 Example 2 except that the amount of acrylic acid added was 238 parts.
A 70% acrylated epoxy resin was obtained in the same manner as above.
上記の70%アクリル化エポキシ樹脂100部、■、6
−ジイツシアナトヘキサンの三量体とグリセリンジアク
リレートとの反応生成物であるアクリル樹脂30部、n
−ブチルセロソルブ5部、ジメチルホルムアミド20部
、フタロシアニングリーン1.5部、シリカ粉末2部、
タルク20部、ベンジルジメチルケタール5部及びジシ
アンジアミド2部を混合し、さらにロールで混練し、ソ
ルダーレジストを得た。このレジストの粘度は25℃で
154cPsであった。100 parts of the above 70% acrylated epoxy resin, ■, 6
- 30 parts of an acrylic resin which is the reaction product of a trimer of dicyanatohexane and glycerin diacrylate, n
- 5 parts of butyl cellosolve, 20 parts of dimethylformamide, 1.5 parts of phthalocyanine green, 2 parts of silica powder,
20 parts of talc, 5 parts of benzyl dimethyl ketal, and 2 parts of dicyandiamide were mixed and further kneaded with a roll to obtain a solder resist. The viscosity of this resist was 154 cPs at 25°C.
このソルダーレジストを実施例と同様にして基板に塗布
、乾燥、露光したのち、1,1.1−トリクロロエタン
及びメタノール(95: 5)の混合溶液で30秒間現
像し、次いで150℃で1時間加熱硬化させた。その結
果、ネガマスクに対応した正確な硬化膜が得られた。こ
の硬化膜について実施例1と同様にして(イ)〜(ニ)
の各試験を行った。結果を表に示す。This solder resist was applied to the substrate in the same manner as in the example, dried, and exposed to light, then developed with a mixed solution of 1,1.1-trichloroethane and methanol (95:5) for 30 seconds, and then heated at 150°C for 1 hour. hardened. As a result, an accurate cured film compatible with negative masks was obtained. This cured film was treated in the same manner as in Example 1 (a) to (d).
Each test was conducted. The results are shown in the table.
実施例4 アクリル酸の添加量を272部とした以外は。Example 4 Except that the amount of acrylic acid added was 272 parts.
実施例2と同様にして80%アクリル化エポキシ樹脂を
得た。An 80% acrylated epoxy resin was obtained in the same manner as in Example 2.
次いで該エポキシ樹脂100部、1,6−ジイツシアナ
トヘキサンの三量体とグリセリンジアクリレートとの反
応生成物でありアクリル樹脂20部、n−ブチルセロソ
ルブ5部、ジメチルホルムアミド20部、フタロシアニ
ングリーン1.5部、シリカ粉末2部、タルク20部、
ベンジルジメチルケタール5部及びジシアンジアミド2
部を混合し、さらにロールで混練し、ソルダーレジスト
を得た。Next, 100 parts of the epoxy resin, 20 parts of an acrylic resin which is a reaction product of a trimer of 1,6-dicyanatohexane and glycerin diacrylate, 5 parts of n-butyl cellosolve, 20 parts of dimethylformamide, 1. 5 parts, 2 parts of silica powder, 20 parts of talc,
5 parts of benzyl dimethyl ketal and 2 parts of dicyandiamide
The components were mixed and further kneaded with a roll to obtain a solder resist.
このレジストの粘度は25℃で173cPsであった
このソルダーレジストを用いて、実施例3と同様にして
基板に塗布し、露光、現像及び加熱硬化の各処理を施し
た。その結果、ネガマスクに対応した正確な硬化膜が得
られた。この硬化膜について実施例1と同様にして(イ
)〜(ニ)の各試験を行った。結果を表に示す。なお表
中(イ)は、100のゴバン目の全てが剥離しなかった
ことを表す。This solder resist, which had a viscosity of 173 cPs at 25° C., was applied to a substrate in the same manner as in Example 3, and subjected to exposure, development, and heat curing treatments. As a result, an accurate cured film compatible with negative masks was obtained. Each of the tests (a) to (d) was conducted on this cured film in the same manner as in Example 1. The results are shown in the table. Note that (a) in the table indicates that all 100 rows were not peeled off.
表から明らかなとおり、実施例1〜4で得られたソルダ
ーレジストは、基板との接触強度、硬度、半田耐熱性及
び絶縁性において優れた性質を示した。As is clear from the table, the solder resists obtained in Examples 1 to 4 exhibited excellent properties in terms of contact strength with the substrate, hardness, soldering heat resistance, and insulation properties.
比較例1
エピクロンN−673,100部及びアクリル酸340
部を塩化コリン10部及びp−メトキシフェノール1部
の存在下で、95℃で6時間反応させたのち、実施例2
と同様にして100%アクリル化エポキシ樹脂を得た。Comparative Example 1 Epicuron N-673, 100 parts and acrylic acid 340
Example 2
A 100% acrylated epoxy resin was obtained in the same manner as above.
次いで該エポキシ樹脂100部、1.6−ジイツシアナ
トヘキサンの三量体とグリセリンジアクリレートとの反
応生成物であるアクリル樹脂20部、n−ブチルセロソ
ルブ5部、フタロシアニングリーン1.5部、シリカ粉
末2部、タルク20部及びベンジルジメチルケタール5
部を混合し、さらにロールで混練して得たソルダーレジ
ストを実施例4と同様にして塗布、乾燥し、露光した。Next, 100 parts of the epoxy resin, 20 parts of an acrylic resin which is a reaction product of a trimer of 1,6-dicyanatohexane and glycerin diacrylate, 5 parts of n-butyl cellosolve, 1.5 parts of phthalocyanine green, and silica powder. 2 parts, 20 parts of talc and 5 parts of benzyl dimethyl ketal
A solder resist obtained by mixing the parts and kneading with a roll was applied, dried, and exposed in the same manner as in Example 4.
その後、1.1.1−トリクロロエタンを用い5分間現
像したが充分な現像は行えなかった。また、1,1.1
−トリクロロエタンとメタノール(95:5)の混合溶
液で現像を行った場合は、2分では充分に現像できなか
った。3分では現像は可能であったが、現像後140℃
で加熱すると硬化膜にふくれが生じた。Thereafter, development was performed for 5 minutes using 1.1.1-trichloroethane, but sufficient development could not be performed. Also, 1,1.1
- When developing with a mixed solution of trichloroethane and methanol (95:5), sufficient development could not be achieved within 2 minutes. Development was possible in 3 minutes, but at 140°C after development.
When heated, the cured film blistered.
比較例2
実施例4における80%アクリル化エポキシ樹脂の代わ
りに、比較例1で得た100%アクリル化エポキシ樹脂
80部及びエピクロンN−673,20部を用いた以外
は実施例4と同一組成のソルダーレジストを調製した。Comparative Example 2 Same composition as Example 4 except that 80 parts of the 100% acrylated epoxy resin obtained in Comparative Example 1 and 20 parts of Epicron N-673 were used instead of the 80% acrylated epoxy resin in Example 4. A solder resist was prepared.
このソルダーレジストを用い、実施例4と同様にして基
板に塗布、乾燥し、露光したのち現像を行い、加熱処理
した。現像液として、1,1.1− トリクロロエタン
及び1,1.1−トリクロロエタンとメタノール(95
: 5)の混合液を用い、加熱温度は140℃であった
。その結果、加熱処理時に硬化膜に部分的にふくれを生
じた。Using this solder resist, it was applied to a substrate in the same manner as in Example 4, dried, exposed, developed, and heat-treated. As a developer, 1,1.1-trichloroethane and 1,1.1-trichloroethane and methanol (95%
: The mixture of 5) was used and the heating temperature was 140°C. As a result, the cured film partially blistered during the heat treatment.
比較例3
1.6−ジイツシアナトヘキサンの三量体にグリセリン
ジアクリレートを反応させて得たアクリル樹脂を除いた
以外は、実施例1と同一組成のソルダーレジストを製造
した。Comparative Example 3 A solder resist having the same composition as in Example 1 was produced except that the acrylic resin obtained by reacting the trimer of 1,6-dicyanatohexane with glycerin diacrylate was removed.
このソルダーレジストを用い実施例1と同様にして基板
に塗布し乾燥して露光したのち現像を行い、その後加熱
処理した。This solder resist was applied to a substrate in the same manner as in Example 1, dried, exposed, developed, and then heated.
この時加熱処理時に塗膜の一部にふくれを生じた。また
、ふくれの生じていない部分の塗膜の鉛筆硬度は2Hで
あった。At this time, blistering occurred in a part of the coating film during the heat treatment. Further, the pencil hardness of the coating film in the area where no blistering occurred was 2H.
比較例4
1.6−ジイツシアナトヘキサンの三量体にグリセリン
ジアクリレートを反応させて得たアクリル樹脂を除いた
以外は、実施例4と同一組成のソルダーレジストを製造
した。Comparative Example 4 A solder resist having the same composition as in Example 4 was produced except that the acrylic resin obtained by reacting the trimer of 1,6-dicyanatohexane with glycerin diacrylate was removed.
このソルダーレジストを用い実施例4と同様にして基板
に塗布し乾燥して露光したのち現像して。This solder resist was applied to a substrate in the same manner as in Example 4, dried, exposed, and developed.
その後加熱処理した。It was then heat treated.
得られた試験片を半田耐熱性のテストを行ったところ、
塗膜にふくれを生じた。When the obtained test piece was tested for soldering heat resistance,
Blistering occurred on the paint film.
比較例5
1.6−ジイツシアナトヘキサンの三量体にグリセリン
ジアクリレートを反応させて得たアクリル樹脂20部の
代わりに、100%アクリル化したフェノールノボラッ
ク型エポキシ樹脂20部を用いた以外は実施例1と同一
の組成のソルダーレジストを調製した。Comparative Example 5 Except that 20 parts of a 100% acrylated phenol novolac type epoxy resin was used instead of 20 parts of an acrylic resin obtained by reacting a trimer of 1.6-dicyanatohexane with glycerin diacrylate. A solder resist having the same composition as in Example 1 was prepared.
このソルダーレジストを用い実施例1と同様にして基板
に塗布し乾燥して露光したのち現像を行なったが3分間
現像を行っても充分に現像できなかった。This solder resist was applied to a substrate in the same manner as in Example 1, dried, exposed and then developed, but sufficient development was not achieved even after 3 minutes of development.
[発明の効果]
以上に説明したとおり、本発明のソルダーレジストは、
基板に塗布したのち光照射及び加熱によって容易に硬化
させることができ、この硬化膜は基板に対する接合強度
、硬度、半田耐熱性及び絶縁性などにおいて優れた性質
を示すものであり。[Effect of the invention] As explained above, the solder resist of the present invention has the following effects:
After being applied to a substrate, it can be easily cured by light irradiation and heating, and this cured film exhibits excellent properties such as bonding strength to the substrate, hardness, soldering heat resistance, and insulation properties.
また画像形成時の現像性にも優れている。しかって本発
明のソルダーレジストは、プリント配線板製造用のソル
ダーレジストとして極めて有用である。It also has excellent developability during image formation. Therefore, the solder resist of the present invention is extremely useful as a solder resist for manufacturing printed wiring boards.
Claims (2)
エポキシ当量に対して0.3〜0.8当量のアクリル酸
及び/又はメタクリル酸が付加されている部分アクリル
化及び/又はメタクリル化エポキシ樹脂;(b)少なく
とも1個のイソシアヌル環及び少なくとも3個のイソシ
アネート基を含有するジイソシアネートの三量体と、少
なくとも2個のアクリロイル基及び/又はメタクリロイ
ル基と少なくとも1個の水酸基を含有する化合物との反
応生成物;(c)光増感剤;並びに (d)熱硬化剤 からなることを特徴とするソルダーレジスト。(1) (a) Cresol novolac type epoxy resin 1
Partially acrylated and/or methacrylated epoxy resin to which 0.3 to 0.8 equivalents of acrylic acid and/or methacrylic acid are added relative to the epoxy equivalent; (b) at least one isocyanuric ring and at least three isocyanuric rings; reaction product of a trimer of diisocyanate containing isocyanate groups and a compound containing at least two acryloyl and/or methacryloyl groups and at least one hydroxyl group; (c) a photosensitizer; and ( d) A solder resist comprising a thermosetting agent.
(a)成分100重量部に対して(b)成分5〜80重
量部、(c)成分2〜15重量部及び(d)成分0.5
〜5重量部である特許請求の範囲第(1)項記載のソル
ダーレジスト。(2) The blending ratio of each component in the solder resist is 5 to 80 parts by weight of component (b), 2 to 15 parts by weight of component (c), and 0.5 parts by weight of component (d) to 100 parts by weight of component (a).
5 parts by weight of the solder resist according to claim (1).
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6726086A JPS62226145A (en) | 1986-03-27 | 1986-03-27 | Solder resist |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6726086A JPS62226145A (en) | 1986-03-27 | 1986-03-27 | Solder resist |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS62226145A true JPS62226145A (en) | 1987-10-05 |
Family
ID=13339809
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6726086A Pending JPS62226145A (en) | 1986-03-27 | 1986-03-27 | Solder resist |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS62226145A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62247353A (en) * | 1986-04-21 | 1987-10-28 | Hitachi Chem Co Ltd | Photosensitive element |
JPH0243551A (en) * | 1988-08-04 | 1990-02-14 | Fuji Photo Film Co Ltd | Liquid photosensitive resin composition |
JPH02173747A (en) * | 1988-12-27 | 1990-07-05 | Tamura Kaken Kk | Photosensitive resin composition |
JPH02223954A (en) * | 1989-02-24 | 1990-09-06 | Nippon Synthetic Chem Ind Co Ltd:The | Photosensitive resin composition |
JPH0329951A (en) * | 1989-06-09 | 1991-02-07 | Morton Thiokol Inc | Optical image forming composite |
US9181380B2 (en) | 2007-03-30 | 2015-11-10 | Richard Austin Panther | Thermosetting resin composition |
-
1986
- 1986-03-27 JP JP6726086A patent/JPS62226145A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62247353A (en) * | 1986-04-21 | 1987-10-28 | Hitachi Chem Co Ltd | Photosensitive element |
JPH0243551A (en) * | 1988-08-04 | 1990-02-14 | Fuji Photo Film Co Ltd | Liquid photosensitive resin composition |
JPH02173747A (en) * | 1988-12-27 | 1990-07-05 | Tamura Kaken Kk | Photosensitive resin composition |
JPH02223954A (en) * | 1989-02-24 | 1990-09-06 | Nippon Synthetic Chem Ind Co Ltd:The | Photosensitive resin composition |
JPH0329951A (en) * | 1989-06-09 | 1991-02-07 | Morton Thiokol Inc | Optical image forming composite |
US9181380B2 (en) | 2007-03-30 | 2015-11-10 | Richard Austin Panther | Thermosetting resin composition |
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