JPS6222468B2 - - Google Patents
Info
- Publication number
- JPS6222468B2 JPS6222468B2 JP54032829A JP3282979A JPS6222468B2 JP S6222468 B2 JPS6222468 B2 JP S6222468B2 JP 54032829 A JP54032829 A JP 54032829A JP 3282979 A JP3282979 A JP 3282979A JP S6222468 B2 JPS6222468 B2 JP S6222468B2
- Authority
- JP
- Japan
- Prior art keywords
- pressure
- strain
- diaphragm
- sensitive diaphragm
- resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052710 silicon Inorganic materials 0.000 claims description 26
- 239000010703 silicon Substances 0.000 claims description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 25
- 239000013078 crystal Substances 0.000 description 12
- 230000007423 decrease Effects 0.000 description 6
- 229910017709 Ni Co Inorganic materials 0.000 description 3
- 229910003267 Ni-Co Inorganic materials 0.000 description 3
- 229910003262 Ni‐Co Inorganic materials 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 229910000833 kovar Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 230000035882 stress Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910020220 Pb—Sn Inorganic materials 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 235000015067 sauces Nutrition 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Landscapes
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Description
【発明の詳細な説明】
本発明は圧力変換器に係り、特にシリコン感圧
ダイヤフラム中の拡散抵抗が歪によつて変化する
ことを利用した高感度の半導体圧力変換器に関す
る。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a pressure transducer, and more particularly to a highly sensitive semiconductor pressure transducer that utilizes the fact that the diffusion resistance in a silicon pressure-sensitive diaphragm changes with strain.
半導体圧力変換器は、シリコン感圧ダイヤフラ
ム中の拡散抵抗が歪によつて変化することを利用
して圧力を電気量に変換するものとして知られて
いる。第１図はこの種のシリコン感圧ダイヤフラ
ムの従来の構造の一例を示し、受圧台１の上には
シリコン感圧ダイヤフラム２が接着されている。
このシリコン感圧ダイヤフラム２は、通常、厚さ
150μ程度のシリコン単結晶板３で構成され、こ
の単結晶板３の上面には複数個の抵抗素子４が拡
散形成され、下面には選択エツチングにより凹型
起歪部５が形成されている。また、上記受圧台１
の中央部には、上記凹型起歪部５と連通する開口
６が形成されており、さらに受圧台１の下面には
受圧管７の一端が接着され、この受圧管７内には
開口６を介して上記凹型起歪部５と連通する軸方
向の受圧孔８が形成されている。さらに、上記受
圧台１にはハーメチツクシール９を介して複数の
電極棒１０，１０，…１０が固定され、これら電
極棒１０，１０，…１０の内端とシリコン感圧素
子２とはボンデイングワイヤ１１，１１によつて
電気的に接続されている。したがつて、受圧管７
の受圧孔８を通して圧力を測定すべき流体を上記
凹型起歪部５内に供給すると、シリコン単結晶板
３の肉薄部には歪が発生し、これに応じて抵抗素
子４の抵抗値が変化し、この抵抗値の変化を電極
棒１０，１０，…１０を介して外部に取り出すこ
とができる。 Semiconductor pressure transducers are known to convert pressure into electrical quantities by utilizing the fact that the diffusion resistance in a silicon pressure-sensitive diaphragm changes with strain. FIG. 1 shows an example of the conventional structure of this type of silicon pressure-sensitive diaphragm, in which a silicon pressure-sensitive diaphragm 2 is bonded onto a pressure receiving base 1.
This silicon pressure sensitive diaphragm 2 usually has a thickness of
It is composed of a silicon single crystal plate 3 having a thickness of about 150 μm. A plurality of resistive elements 4 are diffused and formed on the upper surface of the single crystal plate 3, and a concave strain-generating portion 5 is formed on the lower surface by selective etching. In addition, the pressure receiving table 1
An opening 6 is formed in the center of the pressure receiving tube 7 to communicate with the concave strain-generating portion 5. Further, one end of a pressure receiving tube 7 is glued to the lower surface of the pressure receiving table 1, and an opening 6 is formed in the pressure receiving tube 7. An axial pressure-receiving hole 8 is formed which communicates with the concave strain-generating portion 5 via the concave strain-generating portion 5 . Further, a plurality of electrode rods 10, 10, ... 10 are fixed to the pressure receiving table 1 via a hermetic seal 9, and the inner ends of these electrode rods 10, 10, ... 10 and the silicon pressure sensitive element 2 are connected to each other. They are electrically connected by bonding wires 11,11. Therefore, the pressure receiving pipe 7
When a fluid whose pressure is to be measured is supplied into the concave strain-generating portion 5 through the pressure receiving hole 8, strain occurs in the thin portion of the silicon single crystal plate 3, and the resistance value of the resistance element 4 changes accordingly. However, this change in resistance value can be extracted to the outside via the electrode rods 10, 10, . . . .
感圧ダイヤフラム２の感度は使用するシリコン
単結晶板３の結晶面と抵抗素子４の形成される結
晶方位および抵抗素子４の形成されている位置な
どによつて決定される。このうち、抵抗素子４の
形成されている位置に関しては、その抵抗素子４
の形成されている位置が一定測定条件で発生する
歪の大きさに比例すると考えられる。外周を固定
された均一厚さのダイヤフラムに等分布荷重を作
用させた場合におけるダイヤフラムの各部の歪を
第２図に示す。横軸はダイヤフラムの半径方向の
位置を半径で規格化した値で、０がダイヤフラム
の中央を、１がダイヤフラムの外周を示す。縦軸
は歪の大きさを最大歪で規格化した値を示す。こ
れにより、外周近傍の歪が最も大きくなること、
すなわち最も高感度になることが分る。したがつ
て従来技術による感圧ダイヤフラム２において
は、この最も高感度となる外周近傍および中央部
に抵抗素子４が拡散形成されていた。一方、感圧
ダイヤフラムを用いて、圧力変換器を構成する場
合には他の各種構成部品と感圧ダイヤフラムが組
み合せられ、感圧ダイヤフラムはこの組み合せに
よつて色々な影響を受ける。中でも感圧ダイヤフ
ラム２が直接、接着される部分（たとえば受圧台
１）の材料とシリコンとの熱膨張係数の差によつ
て生じる熱歪は影響の最も大きなものである。受
圧台１として使用される材料として、通常コバー
ルと称されているFe−Ni−Co合金（熱膨張係数
4.5〜5.0×10-6／℃）板（厚さ1.5mm）を用いこの
受圧台１上にハンダづけで従来技術によるシリコ
ン感圧ダイヤフラム２を接着した圧力変換器にお
いては、その出力が低温側および高温側で、常温
の値から大巾にはずれ、特に低温側の−30℃にお
いてはフルスケールの15〜35％もずれてしまうと
いう問題点が生じ、この熱歪による特性の悪化を
軽減することが望まれていた。この熱歪による特
性の悪化を改善するための方法としてシリコン感
圧ダイヤフラムが接着される部分の構造および材
料については色々な提案がなされ、それぞれに効
果を上げているが、これらは全て熱歪を減少させ
るための工夫である。 The sensitivity of the pressure sensitive diaphragm 2 is determined by the crystal plane of the silicon single crystal plate 3 used, the crystal orientation in which the resistance element 4 is formed, the position in which the resistance element 4 is formed, and the like. Among these, regarding the position where the resistive element 4 is formed, the resistive element 4 is
It is considered that the position where the . Figure 2 shows the strain in each part of the diaphragm when a uniformly distributed load is applied to a diaphragm with a fixed outer circumference and a uniform thickness. The horizontal axis is a value obtained by normalizing the radial position of the diaphragm by the radius, where 0 indicates the center of the diaphragm and 1 indicates the outer circumference of the diaphragm. The vertical axis indicates a value obtained by normalizing the magnitude of strain by the maximum strain. As a result, the distortion near the outer periphery becomes the largest,
In other words, it can be seen that the sensitivity is the highest. Therefore, in the pressure sensitive diaphragm 2 according to the prior art, the resistance element 4 is diffused and formed near the outer periphery and at the center where the sensitivity is highest. On the other hand, when a pressure-sensitive diaphragm is used to construct a pressure transducer, the pressure-sensitive diaphragm is combined with various other components, and the pressure-sensitive diaphragm is affected in various ways by this combination. Among these, the thermal strain caused by the difference in thermal expansion coefficient between silicon and the material of the part to which the pressure sensitive diaphragm 2 is directly bonded (for example, the pressure receiving base 1) has the greatest effect. The material used for the pressure receiving table 1 is an Fe-Ni-Co alloy (with a coefficient of thermal expansion
In a pressure transducer using a 4.5 to 5.0 On the high temperature side, there is a problem that the value deviates widely from the normal temperature value, and especially on the low temperature side -30℃, it deviates by 15 to 35% of the full scale. That was what was hoped for. As a method to improve the deterioration of characteristics caused by thermal strain, various proposals have been made regarding the structure and material of the part to which the silicon pressure-sensitive diaphragm is bonded, and each has been effective, but all of these have been effective. This is a device to reduce it.
本発明は、シリコン感圧ダイヤフラムにおい
て、抵抗素子の配置の仕方を工夫することによつ
て、上記熱歪の影響を軽減することを目的とす
る。 An object of the present invention is to reduce the influence of the thermal distortion described above by devising the arrangement of resistive elements in a silicon pressure-sensitive diaphragm.
しかして、本発明による圧力変換器は、片面に
抵抗素子が拡散形成され他面に凹型起歪部を形成
してなるシリコン感圧ダイヤフラムを有するもの
において、上記感圧ダイヤフラムの抵抗素子のう
ち外側のものは、上記凹型起歪部の外周から凹型
起歪部の直径あるいは幅の６％に相当する領域を
越えた内側近傍に配置されたことを特徴としてい
る。 The pressure transducer according to the present invention has a silicon pressure sensitive diaphragm having a resistance element diffused and formed on one side and a concave strain-generating portion formed on the other side, in which the resistance element of the pressure sensitive diaphragm is located on the outer side. This is characterized in that it is disposed near the inner side of the concave strain-generating portion beyond an area corresponding to 6% of the diameter or width of the concave strain-generating portion from the outer periphery of the concave strain-generating portion.
以下本発明による圧力変換器の実施例を第１図
と同一部分に同一符号を付して示した第３図およ
び第４図を参照して説明する。 Embodiments of the pressure transducer according to the present invention will be described below with reference to FIGS. 3 and 4, in which the same parts as in FIG. 1 are denoted by the same reference numerals.
第３図は本発明によるシリコン感圧ダイヤフラ
ム２の縦断面図を示しており、シリコン感圧ダイ
ヤフラム２は厚さ150μで結晶面が（110）面のｎ
形のシリコン単結晶板３で構成され、この単結晶
板３の下面には、選択エツチングにより凹型起歪
部５が形成され、この凹型起歪部５は直径Ｄを有
する円形の凹所である。 FIG. 3 shows a longitudinal cross-sectional view of a silicon pressure-sensitive diaphragm 2 according to the present invention.
A concave strain-generating portion 5 is formed on the lower surface of the single-crystal plate 3 by selective etching, and the concave strain-generating portion 5 is a circular recess having a diameter D. .
一方、上記単結晶板３の上面には、第４図から
明らかなように、長さ方向が＜110＞方向である
４個のＰ形抵抗素子４１，４２，４３，４４が中
央部に２個、外側に２個それぞれ拡散形成されて
いる。これらの抵抗素子のうち最も外側に位置す
る抵抗素子４１および４４は、それぞれ、上記凹
型起歪部５の外周から凹型起歪部５の直径Ｄの６
％に相当する領域を越えた内側近傍に形成されて
いる。 On the other hand, on the upper surface of the single crystal plate 3, as is clear from FIG . Two are formed in the center and two are diffused on the outside. Of these resistance elements, the outermost resistance elements 4 1 and 4 4 are located at a distance from the outer periphery of the concave strain-generating portion 5 to 6 of the diameter D of the concave strain-generating portion 5, respectively.
It is formed near the inside beyond the area corresponding to %.
また、上記シリコン単結晶板３の抵抗素子側の
面はSiO2膜１２で被われているが、上記各抵抗
素子４１，４２，４３，４４の両端部分はフオト
エツチング処理によつてSiO2膜１２が除去さ
れ、Al電極１３，１４が形成されている。 Further, the surface of the silicon single crystal plate 3 on the resistance element side is covered with a SiO 2 film 12, but both end portions of each of the resistance elements 4 1 , 4 2 , 4 3 , 4 4 are photoetched. Then, the SiO 2 film 12 is removed, and Al electrodes 13 and 14 are formed.
上述のように構成されたシリコン感圧ダイヤフ
ラム２は、第１図に示したように、コバールと呼
称されるFe−Ni−Co合金で作られた厚さ1.5mmの
受圧台１の上にハンダでろう付けされる。しかし
て、Al電極１３，１４と電極棒１０，１０，…
１０とは前述したようにボンデイングワイヤ１
１，１１によつて電気的に接続されている。 The silicon pressure-sensitive diaphragm 2 constructed as described above is soldered onto a 1.5 mm thick pressure receiving base 1 made of an Fe-Ni-Co alloy called Kovar, as shown in FIG. It is brazed. Therefore, the Al electrodes 13, 14 and the electrode rods 10, 10,...
10 is the bonding wire 1 as mentioned above.
1 and 11 are electrically connected.
また、上記シリコン感圧ダイヤフラム２は、キ
ヤツプ１５で被われ、このキヤツプ１５の縁部は
受圧台１の外周に対して溶接部１６によつて封止
され、キヤツプ１５内は通常真空雰囲気に保たれ
基準室１７とされている。 The silicon pressure-sensitive diaphragm 2 is covered with a cap 15, and the edge of the cap 15 is sealed against the outer periphery of the pressure receiving table 1 by a welded part 16, and the inside of the cap 15 is normally kept in a vacuum atmosphere. This is referred to as a sauce reference chamber 17.
第５図に、シリコン感圧ダイヤフラム２を接着
する受圧台１に、通常コバールと呼ばれている
Fe−Ni−Co合金製板（厚さ1.5mm）を用い、シリ
コン感圧ダイヤフラム２として、結晶面に
（110）面、抵抗素子の長さ方向に＜110＞方向を
とり、ダイヤフラムの中央から外周までにわたつ
て実験的に９個の抵抗素子（Ｐ形拡散層）を形成
したものを用い、感圧ダイヤフラム２と受圧台１
とをPb−Snハンダでろう付けした圧力変換器に
ついて、ダイヤフラムの各部の抵抗素子の抵抗値
が温度をかえたときに変化する実験データを示し
た。30℃の抵抗値を基準とし、温度をかえたとき
に変化する割合をとり、中央部の値を基準として
図示した。横軸はダイヤフラムにおける位置を示
し、中央を０、外周を１で示している。シリコン
の熱膨張係数は2.4×10-6／℃、コバールのそれ
は4.5〜5.0×10-6／℃であるので、30℃以上では
ダイヤフラムに引張応力（抵抗値が増加する方
向）が、30℃以下ではダイヤフラムに圧縮応力
（抵抗値が減少する方向）が、かかつていると考
えられる。第５図から、上記応力は感圧ダイヤフ
ラム全体に一様にかかるのではなく、外周に近い
部分に集中的にかかつていることが分る。第５図
における−30℃の最外部の値−0.91％という値
は、例えばフルスケール１気圧用圧力変換器に用
いられる通常の感圧ダイヤフラムにおけるフルス
ケールにおける抵抗値の変化率が約１％であるこ
とから判断すると、如何に大きな値であるか分る
であろう。同時に、従来技術による圧力変換器の
−30℃における出力のズレ15〜35％とほゞ対応し
ていることが分る。 In Fig. 5, a silicon pressure sensitive diaphragm 2 is attached to a pressure receiving base 1, which is usually called Kovar.
A Fe-Ni-Co alloy plate (thickness 1.5 mm) is used as the silicon pressure-sensitive diaphragm 2, with the (110) crystal plane and the <110> direction in the length direction of the resistance element. A pressure-sensitive diaphragm 2 and a pressure-receiving base 1 were used, in which nine resistance elements (P-type diffusion layer) were experimentally formed along the outer periphery.
For a pressure transducer in which the diaphragm and the diaphragm are brazed with Pb-Sn solder, we have shown experimental data on how the resistance values of the resistance elements in each part of the diaphragm change when the temperature changes. The resistance value at 30°C is used as the reference, and the rate of change when the temperature is changed is calculated, and the value at the center is used as the reference. The horizontal axis indicates the position on the diaphragm, with 0 indicating the center and 1 indicating the outer periphery. The coefficient of thermal expansion of silicon is 2.4×10 -6 /℃, and that of Kovar is 4.5 to 5.0×10 -6 /℃, so the tensile stress (in the direction of increasing resistance value) on the diaphragm increases at temperatures above 30℃. In the following, it is considered that compressive stress (in the direction in which the resistance value decreases) is applied to the diaphragm. From FIG. 5, it can be seen that the stress is not uniformly applied to the entire pressure-sensitive diaphragm, but concentrated to a portion near the outer periphery. The outermost value of -0.91% at -30°C in Figure 5 means, for example, that the rate of change in resistance at full scale of a normal pressure-sensitive diaphragm used in a full-scale 1 atm pressure transducer is about 1%. Judging from certain facts, you can see how large the value is. At the same time, it can be seen that this substantially corresponds to the 15 to 35% output deviation at -30° C. of the pressure transducer according to the prior art.
すなわち、通常の感圧ダイヤフラムのフルスケ
ールにおける抵抗値の変化は、中央部に配置され
ている２つの抵抗で約１％増加し、外側に配置さ
れている２つの抵抗で約１％減少する。（この増
減は加圧の方向が逆になれば逆になる。）一方抵
抗の長さは第５図の横軸の巾で0.2に相当するの
で、第５図によれば−30℃において中央部の抵抗
は約0.05％減少し、外側の抵抗は約0.63％減少す
ることになり、これをフルスケールに対する割合
としてみると
（0.63−0.05）／（１＋１）＝0.29
となり、前述の出力のズレ15〜35％とよく一致す
る。 That is, the full-scale change in resistance of a typical pressure-sensitive diaphragm increases by about 1% for the two resistors placed in the center, and decreases by about 1% for the two resistors placed on the outside. (This increase/decrease will be reversed if the direction of pressure is reversed.) On the other hand, the length of the resistance corresponds to 0.2 of the width of the horizontal axis in Figure 5, so according to Figure 5, at -30°C, the center The outer resistance will decrease by about 0.05%, and the outer resistance will decrease by about 0.63%. If we look at this as a percentage of the full scale, it will be (0.63 - 0.05) / (1 + 1) = 0.29, and the output deviation mentioned above will decrease. Good agreement with 15-35%.
第５図の結果を用いて、外側の抵抗と中央部の
抵抗との熱歪による抵抗値の変化の影響をフルス
ケールの2.5％以下にするための条件を求める。
このためには−30℃において外周部の抵抗の変化
を0.10％以下に抑える必要があり、これは外周部
の抵抗の配置位置を第５図の横軸の0.88以内にす
ることに相当する。すなわち、外側の抵抗の配置
位置を凹型起歪部の外周から凹型起歪部の直径の
６％に相当する領域を越える内側にすることに相
当する。 Using the results shown in Figure 5, find the conditions to keep the effect of change in resistance value due to thermal strain between the outer resistor and the central resistor to 2.5% or less of the full scale.
For this purpose, it is necessary to suppress the change in resistance at the outer circumference to 0.10% or less at −30° C., which corresponds to setting the position of the resistance at the outer circumference within 0.88 of the horizontal axis in FIG. That is, this corresponds to arranging the outer resistor so that it is located inside the area beyond the outer periphery of the concave strain-generating portion, which corresponds to 6% of the diameter of the concave strain-generating portion.
第５図から感圧ダイヤフラムの外周部近傍を避
けて抵抗素子を形成することが熱歪の影響を軽減
するために有効であることが明らかとなつた。こ
のことは、第３図および第４図の実施例におい
て、抵抗素子４１，４２，４３，４４のうち最も
外側の抵抗素子４１，４４の位置を凹型起歪部５
の中央から0.92mmの位置とし、そしてこの凹型起
歪部５の半径を1.0mmに形成した場合と1.1mmに形
成した場合とを比較するとさらに明確になる。す
なわち、本発明の実験によれば、−30〜80℃にお
ける温度特性の精度をフルスケールに対する割合
で表わした場合の精度が±1.5％以内に入る歩留
りは、凹型起歪部５の直径が2.0mmの場合に25％
であるのに対し、2.2mmの場合には82％である。
2.0mmの場合は第５図の横軸と同じ表し方にする
と0.92であり、2.2mmの場合は0.84であり、第５図
の結果とよい対応を示している。このような理由
から−30〜80℃の温度範囲において、精度±1.5
％を確保するためには外側の抵抗を凹型起歪部の
外周から凹型起歪部の直径の６％に相当する領域
を越えた内側近傍に配置する必要がある。 From FIG. 5, it has become clear that forming the resistance element avoiding the vicinity of the outer circumference of the pressure-sensitive diaphragm is effective in reducing the influence of thermal strain. This means that in the embodiments shown in FIGS. 3 and 4, the position of the outermost resistance elements 4 1 , 4 4 among the resistance elements 4 1 , 4 2 , 4 3 , 4 4 is changed to the concave strain-generating portion 5 .
This becomes even clearer when comparing the cases where the radius of the concave strain-generating portion 5 is 1.0 mm and 1.1 mm. That is, according to the experiments of the present invention, when the accuracy of temperature characteristics at -30 to 80°C is expressed as a percentage of the full scale, the yield is within ±1.5% when the diameter of the concave strain-generating portion 5 is 2.0%. 25% for mm
In contrast, in the case of 2.2 mm, it is 82%.
In the case of 2.0 mm, it is 0.92 when expressed in the same way as the horizontal axis in Fig. 5, and in the case of 2.2 mm, it is 0.84, showing good correspondence with the results in Fig. 5. For this reason, the accuracy is ±1.5 in the temperature range of -30 to 80℃.
%, it is necessary to arrange the outer resistor near the inner side beyond the area corresponding to 6% of the diameter of the concave strain-generating portion from the outer periphery of the concave strain-generating portion.
以上述べたように本発明によれば、シリコン単
結晶板の表面に拡散形成される抵抗素子群のうち
測定に用いられる４つの抵抗素子のうち外側の２
つをを、受圧台の凹型起歪部の外周から凹型起歪
部の直径あるいは幅の６％に相当する領域を越え
た内側に配置するようにしたから、使用温度の変
化に基づく熱応力の影響によつて圧力変換器の出
力特性が害されることが少なく、精度の高い圧力
変換器を提供することができる。 As described above, according to the present invention, the outer two of the four resistance elements used for measurement among the resistance element group diffused and formed on the surface of the silicon single crystal plate.
Since the two parts are arranged inside the outer circumference of the concave strain-generating part of the pressure receiving table beyond an area corresponding to 6% of the diameter or width of the concave strain-generating part, thermal stress due to changes in operating temperature can be reduced. The output characteristics of the pressure transducer are less likely to be affected by the influence, and a highly accurate pressure transducer can be provided.
第１図は圧力変換器の構造を示した縦断面図、
第２図はダイヤフラムに等分布荷重を作用させた
際のダイヤフラムの歪特性図、第３図は本発明に
よるシリコン感圧ダイヤフラムの構造を示した縦
断面図、第４図は同素子の平面図、第５図はシリ
コン感圧ダイヤフラムの半径方向に沿う抵抗値の
変化を示した線図である。
１……受圧台、２……シリコン感圧ダイヤフラ
ム、３……シリコン単結晶板、４……抵抗素子、
５……凹型起歪部、７……受圧管、１０……電極
棒、１１……ボンデイングワイヤ、１２……
SiO2膜、１３，１４……Al電極。
Figure 1 is a vertical cross-sectional view showing the structure of the pressure transducer;
Fig. 2 is a strain characteristic diagram of the diaphragm when a uniformly distributed load is applied to the diaphragm, Fig. 3 is a longitudinal cross-sectional view showing the structure of the silicon pressure-sensitive diaphragm according to the present invention, and Fig. 4 is a plan view of the same element. , FIG. 5 is a diagram showing the change in resistance value along the radial direction of the silicon pressure-sensitive diaphragm. 1... Pressure receiving base, 2... Silicon pressure sensitive diaphragm, 3... Silicon single crystal plate, 4... Resistance element,
5... Concave strain-generating part, 7... Pressure receiving tube, 10... Electrode rod, 11... Bonding wire, 12...
SiO 2 film, 13, 14...Al electrode.
Claims (1)
歪部を形成してなるシリコン感圧ダイヤフラムを
有するものにおいて、上記感圧ダイヤフラムの抵
抗素子のうち外側のものを上記凹型起歪部の外周
から凹型起歪部の直径あるいは幅の６％に相当す
る領域を越えた内側近傍に配置したことを特徴と
する圧力変換器。1. In a silicon pressure-sensitive diaphragm having a resistance element diffused on one side and a concave strain-generating part formed on the other side, the outer resistance element of the pressure-sensitive diaphragm is placed on the outer periphery of the concave strain-generating part. 1. A pressure transducer characterized in that the pressure transducer is disposed near the inner side beyond a region corresponding to 6% of the diameter or width of the concave strain-generating portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3282979A JPS55125676A (en) | 1979-03-20 | 1979-03-20 | Pressure transducer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3282979A JPS55125676A (en) | 1979-03-20 | 1979-03-20 | Pressure transducer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55125676A JPS55125676A (en) | 1980-09-27 |
| JPS6222468B2 true JPS6222468B2 (en) | 1987-05-18 |
Family
ID=12369706
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3282979A Granted JPS55125676A (en) | 1979-03-20 | 1979-03-20 | Pressure transducer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55125676A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62158367A (en) * | 1985-12-28 | 1987-07-14 | Anritsu Corp | Pressure sensor |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50159982A (en) * | 1974-06-14 | 1975-12-24 |
-
1979
- 1979-03-20 JP JP3282979A patent/JPS55125676A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50159982A (en) * | 1974-06-14 | 1975-12-24 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55125676A (en) | 1980-09-27 |
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