JPS62222632A - Vertical type vapor growth equipment - Google Patents

Abstract

PURPOSE:To reduce adherence of dust to semiconductor wafers, by taking measures for preventing air from being contacted with a quartz boat and from being drawn into a quartz reaction tube due to opening of the upper hatch thereof when the quartz boat is located out of the quartz reaction tube. CONSTITUTION:A quartz boat 6 on which semiconductor wafers 7 are disposed is loaded and unloaded at a predetermined position in a quartz reaction tube 2 by an elevator mechanism 3 on an upper hatch 4. Prior to that, air within a precedent chamber 10 is expelled to be substituted with N2. In this manner, when the boat 6 is located out of the reaction tube 2, no air is contacted with the boat 6 and no air is drawn into the reaction tube 2, due to the opening of the upper hatch 4. Thus, adherence of dust to the wafer7 can be reduced substantially.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a vapor phase growth apparatus for semiconductor wafers.

[Conventional technology]

FIG. 2 shows an example of a conventional vapor phase growth apparatus, which includes an annular vertical heater 1, a quartz reaction tube 2 removably attached to the inside of the heater 1, and an upper hatch 4 equipped with a vertical lifting machine. The reaction gas supplied from the reaction gas supply pipe 8 is placed on a rotatable quartz boat 6 and heated by the resistance heater 1 for vapor phase growth on the semiconductor sea urchin/S7, which is heated by the resistance heater 1. After the reaction, the gas is exhausted from the gas exhaust pipe 9. The structure was designed to stir.

[Problem that the invention seeks to solve]

The conventional vapor phase growth apparatus described above is capable of handling a semiconductor wafer 11"k.
When loading and unloading the mounted quartz boat into a fixed position inside the quartz reaction tube, does air get drawn into the quartz reaction tube? To prevent.

Various measures have been taken, such as flowing a large amount of inert gas from the top or bottom of the quartz reaction tube, but the current situation is that some air is drawn into the quartz reaction tube by opening the top hatch. A semiconductor wafer and 1!1 in the air are heated in a high temperature atmosphere inside a quartz reaction tube heated by a resistance heater.
As two elements coexist, the surface of the semiconductor surface is oxidized before the desired thin film is deposited, and a large amount of inert gas is required. By flushing, the dust inside the quartz reaction tube will fly up and stick to the surface of the semiconductor urchin.

This will have an adverse effect on the subsequent semiconductor device characteristics.

〔problem? Means to solve]

The vertical vapor phase growth apparatus of the present invention includes an annular resistance heater made of 11, a quartz reaction tube detachably attached to the inside thereof, and a N11 resistance heater.
2 (inert gas) substitution, a front-openable transfer room and an upper hatch with a vertical elevating mechanism installed inside it;
A quartz boat that can be rotated while being supported by the upper hatch, a reaction gas supply pipe that supplies reaction gas into the quartz reaction tube, and 1. Gas from the quartz boat that is removed from the stone? Exhaust pipe to exhaust? have.

〔Example〕

Next, the present invention will be explained with reference to the drawings.

FIG. 1 is a longitudinal sectional view of an embodiment of the present invention.

A quartz boat 6 is installed in an annular vertical resistance heater 1 and a quartz reaction tube 2 detachably attached therein, supported by an upper hatch 4 with a vertical lifting mechanism 3 and rotatable by a motor 5. The structure is such that the reactant gas supplied to the semiconductor wafer 7 placed on the substrate and heated by the resistance heater 19 is subjected to vapor phase growth, and the gas after the reaction is exhausted through the exhaust pipe 9. A quartz boat 6 on which a semiconductor wafer 7 is placed by the elevating mechanism 3 of the hatch 4! When loading and unropping the quartz boat 6 to the predetermined position of the quartz reaction tube 2, the quartz boat 6 is placed in the stand-up chamber 10 that can be replaced with N2 and opened forward, and when the quartz boat 6 is located outside the quartz reaction tube 2, it is filled with air. This prevents air from being drawn into the quartz reaction tube 2 due to contact with the quartz boat 6 or opening of the upper hatch 4.

〔Effect of the invention〕

As explained above, the present invention provides N2 (inert gas) substitution, a quartz tube that can be opened from the front, and a quartz boat placed on a semiconductor urchin when loading and unloading into a fixed position in a Y quartz reaction tube. To prevent air from coming into contact with the quartz boat when the quartz boat is located outside the quartz reaction tube, or air from entering the quartz reaction tube when the top hatch is opened, by expelling the air in the storage room and replacing it with Nz in advance. Because the semiconductor wafer and oxygen in the air do not coexist in the high-temperature atmosphere inside the quartz reaction tube heated by a resistance heater, the surface of the semiconductor wafer is not oxidized, and there is no need to flow a large amount of inert gas, so the quartz reaction can proceed. This reduces the amount of dust flying up inside the pipe and reduces the amount of dust adhering to semiconductor wafers. As a result, a thin film of desired quality can be deposited, and good device performance can be obtained.

[Brief explanation of drawings]

FIG. 1 is a longitudinal sectional view of a vertical vapor phase growth apparatus of the present invention, and FIG. 2 is a sectional view of a conventional vertical vapor growth apparatus. 1... Resistance heater, 2... Quartz reaction tube, 3... Vertical lifting mechanism, 4... Upper hatch, 5... Motor , 6... Quartz boat, 7... Semiconductor wafer, 8... Reaction gas supply pipe, 9... Exhaust pipe, 10...
Replacement emperor. 21st! I

Claims (1)

[Claims] A circular vertical resistance heater, a quartz reaction tube removably attached inside it, and a resistance heater mounted on a rotatable quartz boat supported by an upper hatch with an up-and-down mechanism inside. In this device, a reactant gas supplied from a reactant gas supply pipe is applied to a heated semiconductor wafer for vapor phase growth, and the gas after the reaction is exhausted from an exhaust pipe, and the semiconductor wafer is placed by the lifting mechanism of the upper hatch. When loading and unloading the quartz boat into the quartz reaction tube, when the quartz boat is located outside the quartz reaction tube, prevent air from coming into contact with the quartz boat or from being drawn into the quartz reaction tube by opening and closing the upper hatch. A vertical vapor phase growth apparatus characterized by N_2 substitution and having a stand-up chamber that can be opened from the front.