JPS62219567A - Thin-film element - Google Patents
Thin-film elementInfo
- Publication number
- JPS62219567A JPS62219567A JP61061878A JP6187886A JPS62219567A JP S62219567 A JPS62219567 A JP S62219567A JP 61061878 A JP61061878 A JP 61061878A JP 6187886 A JP6187886 A JP 6187886A JP S62219567 A JPS62219567 A JP S62219567A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- light
- electrode
- film
- film element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims description 27
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 17
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 230000006866 deterioration Effects 0.000 claims abstract description 3
- 239000002184 metal Substances 0.000 claims abstract description 3
- 229910052710 silicon Inorganic materials 0.000 claims abstract 2
- 239000010408 film Substances 0.000 claims description 50
- 238000006243 chemical reaction Methods 0.000 claims description 7
- 239000012528 membrane Substances 0.000 claims description 2
- 238000010030 laminating Methods 0.000 claims 1
- 230000003287 optical effect Effects 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 5
- 238000004544 sputter deposition Methods 0.000 abstract description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 description 7
- 230000003595 spectral effect Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000004973 liquid crystal related substance Substances 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910001120 nichrome Inorganic materials 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 238000012356 Product development Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optical Elements Other Than Lenses (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
【発明の詳細な説明】
〔概要〕
イメージセンサや薄膜トランジスタ（ＴＰＴ）などのよ
うな薄膜素子において、光照射を防止する遮光膜として
、高抵抗遮光膜を用いることで、漏れ電流などの特性低
下を効果的に抑制し、動作の信転性を向上させる。[Detailed Description of the Invention] [Summary] In thin film devices such as image sensors and thin film transistors (TPT), a high resistance light shielding film is used as a light shielding film to prevent light irradiation, thereby reducing characteristics such as leakage current. Effectively suppresses and improves reliability of movement.
本発明は、イメージセンサや薄膜トランジスタなどのよ
うな、アモルファス・シリコン膜を使用した素子に関す
る。The present invention relates to elements using an amorphous silicon film, such as image sensors and thin film transistors.
近年ファクシミリ用密着型イメージセンサの製品開発が
精力的に行なわれている。第７図に従来のこの種イメー
ジセンサを示す。基板１上に、共通電極２、光電変換層
３、個別電極４・・・の順に積層されている。光電変換
層３としては、ａ−Ｓｉが用いられるが、ａ−３ｔの光
導電特性、即ち白色光５００７Ｉｘでの光導電率６ ｐ
＝１ｏ−６〜１Ｏ−５（Ω−ｃｍ） −１、暗導電率σ
ｄ＝１０−１０〜１０−８（Ω−ｃｍ） −’を有する
。そのため隣接する個別電極４・・・間に光が照射する
ことで低抵抗となって漏れ電流が流れ、信号電流とリー
ク電流の比Ｓ／Ｎの低減を招き高密度化および階調読取
の阻害要因となっている。In recent years, product development of contact type image sensors for facsimile has been actively conducted. FIG. 7 shows a conventional image sensor of this type. A common electrode 2, a photoelectric conversion layer 3, individual electrodes 4, . . . are laminated in this order on a substrate 1. As the photoelectric conversion layer 3, a-Si is used, but it has a photoconductive property of a-3t, that is, a photoconductivity of 6p under white light 5007Ix.
=1o-6~1O-5 (Ω-cm) -1, dark conductivity σ
d=10-10 to 10-8 (Ω-cm)-'. Therefore, when light shines between adjacent individual electrodes 4, the resistance becomes low and leakage current flows, leading to a decrease in the signal current to leakage current ratio S/N, resulting in higher density and hindering gradation reading. This is a contributing factor.
また近年ａ−Ｓｉ！膜トランジスタａ−３ｔ ＴＦＴを
用いた大面積液晶ディスプレイの発表がなされている。In addition, in recent years a-Si! A large area liquid crystal display using a membrane transistor A-3T TFT has been announced.
第８図にａ −Ｓ ｉ 薄膜トランジスタを使用した液
晶ディスプレイの断面図を示す。基板１）上にゲート電
極１２、ゲート絶縁膜１３、ａ−３ｔ活性層１４、チャ
ンネル保護膜１５、オーミックコンタクト層１６、ソー
ス電極１７ｓ、ドレイン電極１７ｄ 、 ＴＰＴ保護
膜１８および遮光膜１９の順に積層されている。なお２
１は液晶表示装置の画素電極、２２は液晶、２３は対向
電極、２４は基板である。FIG. 8 shows a cross-sectional view of a liquid crystal display using a-Si thin film transistors. A gate electrode 12, a gate insulating film 13, an a-3t active layer 14, a channel protective film 15, an ohmic contact layer 16, a source electrode 17s, a drain electrode 17d, a TPT protective film 18, and a light shielding film 19 are laminated on the substrate 1) in this order. has been done. Note 2
1 is a pixel electrode of a liquid crystal display device, 22 is a liquid crystal, 23 is a counter electrode, and 24 is a substrate.
そして従来は、前記の遮光膜１９として、Ｃｒ等金属材
料が用いられていた。ところが、この遮光膜１９とソー
ス電極１７ｓおよびドレイン電極１７６間に容量接合が
生じ、ＴＰＴがオフ状態になっても、ドレイン・バスの
信号の一部がソース電極１７ｓに印加されてしまうとい
う欠点があった。Conventionally, a metal material such as Cr has been used as the light shielding film 19. However, a capacitive junction occurs between the light shielding film 19, the source electrode 17s, and the drain electrode 176, and even when the TPT is turned off, a part of the drain bus signal is applied to the source electrode 17s, which is a drawback. there were.
このように、従来のイメージセンサや薄膜トランジスタ
などの薄膜素子では、漏れ電流が生じ易いなどの特性低
下を来している。そこで本発明は、イメージセンサや薄
膜トランジスタなどにおけるこのような問題を解消し、
イメージセンサにおける低コスト化および階調読取、高
密度化等高機能化を実現し、かつａ−Ｓｉ ＴＦＴの高
機能化の方向として高精細かつ階調表示を可能とするも
のである。As described above, conventional thin film elements such as image sensors and thin film transistors have deteriorated characteristics such as easy leakage current. Therefore, the present invention solves these problems in image sensors, thin film transistors, etc.
The present invention is intended to realize cost reduction and higher functionality such as gradation reading and higher density in image sensors, and also to enable high-definition and gradation display as a direction toward higher functionality of a-Si TFTs.
第１図は本発明による薄膜素子の基本原理を説明する断
面図である。イメージセンサや薄膜トランジスタなどの
ような薄膜素子は、基板ａ上に、下部電極ｂ、光電変換
層Ｃ１上部電極ｄの順に積層されている。このような薄
膜素子において、光照射による特性低下を防止するため
の遮光膜ｅを設け、かつ該遮光膜ｅとして、高抵抗遮光
膜が使用されている。FIG. 1 is a sectional view illustrating the basic principle of a thin film element according to the present invention. A thin film element such as an image sensor or a thin film transistor is stacked on a substrate a in the order of a lower electrode b and an upper electrode d of the photoelectric conversion layer C1. In such a thin film element, a light-shielding film e is provided to prevent deterioration of characteristics due to light irradiation, and a high-resistance light-shielding film is used as the light-shielding film e.
この高抵抗遮光膜ｅは、イメージセンサの場合であれば
、各個別電極間の隙間に設けられ、薄膜トランジスタの
場合であれば、ソース・ドレイン電極の上の絶縁保護膜
の上に設けられる。そのため、イメージセンサの場合で
あれば、各個別電極間の光電変換層が遮光されるので、
光照射による漏れ電流が未然に防止され、イメージセン
サにおける高密度化が促進される。また薄膜トランジス
タの場合は、ソース・ドレイン電極の上の絶縁保護膜の
上に高抵抗遮光膜が設けられることで、ソース・ドレイ
ン電極と高抵抗遮光膜間における容量接合が低減し、オ
フ電流が減少する。In the case of an image sensor, this high-resistance light-shielding film e is provided in the gap between each individual electrode, and in the case of a thin film transistor, it is provided on the insulating protective film on the source/drain electrodes. Therefore, in the case of an image sensor, the photoelectric conversion layer between each individual electrode is shielded from light.
Leakage current due to light irradiation is prevented, and higher density in the image sensor is promoted. In addition, in the case of thin film transistors, a high-resistance light-shielding film is provided on top of the insulating protective film on the source/drain electrodes, which reduces the capacitive junction between the source/drain electrodes and the high-resistance light-shielding film, reducing off-current. do.
〔第１実施例〕
第２図は本発明をイメージセンサに実施した例で、製造
方法を工程順に示す。まず（ａ）のように、絶縁性基板
１上にＣｒやＮｔＣｒまたはＴｉ等金属膜を堆積した後
、パターニングしてオーミックの共通電極２を形成する
。その後（ｂ）のように、高周波グロー放電分解法によ
り、アモルファス・シリコン膜３を０．５ μｍ〜２μ
ｍ形成する。なおアモルファス・シリコン膜にボロンＱ
ＩＩ）あるいはリン（ｐｌ等の不鈍物をドーピングして
も良い。またｎ＋ａ−３ｔ （〜１００人）／１ａ−３
ｔ（０，５〜２ 、Ｉｊ ｍ）またはｐ＋ａ−５ｉ（〜
５００人）／１ａ−３ｔ（０，５〜２ ＩＩ ｍ）の２
層構造としてもよい。次に（Ｃ１のように、透明電極と
なるＩＴＯまたはＳｎＯ□４を１０００人堆積した後、
ｔｄ）のようにレジスト５を塗布してパターン形成の後
、エツチングする。次いでｔｅｌのように、レジスト５
を残したまま、高抵抗遮光膜となるａ−ＧａＡｓ：■を
１０００〜３０００人堆積する。ａ−ＧａＡｓ：■の形
成は、多結晶ＧａＡｓターゲットを用い、Ａｒ−■２混
合ガス中で高周波スパッター法で行なう。条件としては
、Ａｒ圧力ｌ×１０−”ＴｏｒｒＳｎ！分圧１０−Ｔｏ
ｒｒ〜１０−”Ｔｏｒｒ、 ｒｆパワー４ｏ−ｓｏｗが
望ましい。なお基板温度は室温である。[First Embodiment] FIG. 2 shows an example in which the present invention is applied to an image sensor, and the manufacturing method is shown in the order of steps. First, as shown in (a), a metal film such as Cr, NtCr, or Ti is deposited on an insulating substrate 1, and then patterned to form an ohmic common electrode 2. Thereafter, as shown in (b), the amorphous silicon film 3 is 0.5 μm to 2 μm thick by high-frequency glow discharge decomposition method.
m form. In addition, boron Q is added to the amorphous silicon film.
II) Or doping with an inert substance such as phosphorus (pl) may be used.Also, n+a-3t (~100 people)/1a-3
t(0,5~2, Ij m) or p+a-5i(~
500 people) / 2 of 1a-3t (0.5-2 II m)
It may also have a layered structure. Next (as in C1, after depositing 1000 ITO or SnO□4 to become a transparent electrode,
After applying a resist 5 and forming a pattern as shown in td), etching is performed. Then register 5 like tel
1,000 to 3,000 layers of a-GaAs (■), which will become a high-resistance light-shielding film, are deposited while leaving . Formation of a-GaAs: (1) is carried out by high-frequency sputtering in an Ar-2 mixed gas using a polycrystalline GaAs target. The conditions are: Ar pressure l×10-”TorrSn!partial pressure 10-To
Desirably, the RF power is 40-sow, and the substrate temperature is room temperature.
その後、リフトオフすることにより、隣接する個別電極
５・・・間にａ−ＧａＡｓ：＄１層６が残される。Thereafter, the a-GaAs:$1 layer 6 is left between adjacent individual electrodes 5 by lift-off.
第３図はａ−５ｉおよびａ−ＧａＡｓ：Ｉｌの分光感度
特性を示す図である。本発明によれば、この図に示され
るように、アモルファス・シリコン層が光導電特性を有
する波長９００ｎｍ以下の光が、１０００〜２０００人
程度のａ−ＧａＡｓ：Ｈ膜６により９０％以上吸収され
るため、個別電極４・・・間に発生する光電流によるリ
ークを１０％以下に低減できる利点がある。FIG. 3 is a diagram showing the spectral sensitivity characteristics of a-5i and a-GaAs:Il. According to the present invention, as shown in this figure, more than 90% of light with a wavelength of 900 nm or less, for which the amorphous silicon layer has photoconductive properties, is absorbed by the a-GaAs:H film 6 of about 1,000 to 2,000 layers. Therefore, there is an advantage that leakage due to photocurrent generated between the individual electrodes 4 can be reduced to 10% or less.
〔第２実施例〕
第４図は本発明を実施した薄膜トランジスタの製造方法
を工程順に示す断面図である。まず（ａｌのように、ガ
ラス等の絶縁性基板上１）上に、ゲート電極１２をパタ
ーン形成する。電極材としては、Ｍｏ、Ｃｒｓ ＮｉＣ
ｒ等が用いられる。その後、（ｂ）に示すように、高周
波グロー放電分解法によりゲート絶縁膜１３（ＳｉＯｚ
または５ｉＮ）を３０００人、活性層ａ−５ｉ膜１４を
１０００人、チャンネル保護膜１５（Ｓｉ（ｈまたは５
ｉＮ）を１０００人程度２真空を破らずに連続堆積する
。然る後に、（ｂ）のようにポジレジスト２０を塗布し
た後、（Ｃ）の如くチャンネル部保護膜１５が残るよう
に、選択的にエツチングする。その後（ｄ）のように、
オーミック改善のためリンドープａ−３ｔ層１６を３０
０人堆積し、その上に上部電極膜（Ｔｉ／ＮｉＣｒまた
はＡＩ、Ｃｒ、 ＮｉＣｒ等）を堆積してバターニング
し、ソース・ドレイン電極１７とする。その後（ｅ）の
ように、ポリミド等のＴＰＴ保護膜（第２の絶縁膜）１
８を形成し、パターン形成の後、本発明の高抵抗遮光膜
ａ−ＧａＡｓ：ＨＩ３を堆積する。[Second Embodiment] FIG. 4 is a cross-sectional view showing a method for manufacturing a thin film transistor according to the present invention in order of steps. First, a gate electrode 12 is patterned on an insulating substrate 1 made of glass or the like (like Al). As electrode material, Mo, Crs NiC
r etc. are used. Thereafter, as shown in (b), the gate insulating film 13 (SiOz
or 5iN) for 3000 people, active layer a-5i film 14 for 1000 people, channel protective film 15 (Si(h or
iN) by about 1000 people 2 Continuously deposit without breaking the vacuum. After that, a positive resist 20 is applied as shown in (b), and then selectively etched so that the channel protective film 15 remains as shown in (c). Then, as in (d),
Phosphorus doped A-3T layer 16 for ohmic improvement
After that, an upper electrode film (Ti/NiCr or AI, Cr, NiCr, etc.) is deposited and buttered to form the source/drain electrodes 17. After that, as shown in (e), a TPT protective film (second insulating film) 1 made of polyimide etc.
8 is formed, and after patterning, a high resistance light shielding film a-GaAs:HI3 of the present invention is deposited.
ａ−ＧａＡｓ ：旧９の形成は、多結晶ＧａＡｓターゲ
ットを用い、Ａｒ−■２混合中で高周波スパッタ法によ
り、Ａｒ圧力Ｉ Ｘ １０− ”Ｔｏｒｒのもとで、Ｈ
２分圧１Ｏ−３Ｔｏｒｒ〜１０−”Ｔｏｒｒ、 ｒｆパ
ワー４０〜８０Ｗで行なうのが望ましい。なお基板温度
は室温である。遮光膜１９のパターン形成は、リフトオ
フ法が簡便である。a-GaAs: Former 9 was formed using a polycrystalline GaAs target by high-frequency sputtering in an Ar-2 mixture under an Ar pressure of I x 10-'' Torr.
It is preferable to carry out the process at a partial pressure of 10-3 Torr to 10-'' Torr and an RF power of 40 to 80 W. The substrate temperature is room temperature. The lift-off method is convenient for patterning the light-shielding film 19.
この実施例におけるａ−Ｓｉの分光特性およびａ−Ｇａ
Ａｓ：Ｈ膜の分光特性も、第３図に示すとおりである。Spectral characteristics of a-Si and a-Ga in this example
The spectral characteristics of the As:H film are also as shown in FIG.
すなわちこの図から、ａ−ＧａＡｓ：Ｈ膜の膜厚２００
０人程度７、ａ−Ｓｉの光感度を有する波長の光はほと
んど吸収されることがわかる。しかもａ−ＧａＡｓ：Ｈ
膜の比抵抗は１） 〜１０８（Ω−ｃＷｌ）である。第
５図に、ａ−Ｓｉ ＴＦＴの分光感度特性を示す。入射
光の波長９００ｎｍ以下で、光電流は、１０−”Ａであ
り、従来法に比べ、２桁以上光電流を低減できる。That is, from this figure, the film thickness of the a-GaAs:H film is 200
It can be seen that most of the light having a wavelength having a photosensitivity of about 0.7 and a-Si is absorbed. Moreover, a-GaAs:H
The specific resistance of the film is 1) to 108 (Ω-cWl). FIG. 5 shows the spectral sensitivity characteristics of the a-Si TFT. When the wavelength of the incident light is 900 nm or less, the photocurrent is 10-''A, and the photocurrent can be reduced by more than two orders of magnitude compared to the conventional method.
第６図は、本発明の更に別の実施例を示すものであり、
遮光膜１９をチャンネル部に近づけて成膜することで、
多重反射による光電流も低減可能としている。FIG. 6 shows yet another embodiment of the present invention,
By forming the light shielding film 19 close to the channel part,
It is also possible to reduce photocurrent due to multiple reflections.
なお、絶縁性基板上にゲート電極を有する逆スタガード
型ＴＰＴについて説明したが、絶縁性基板上にソース・
ドレイン電極を有するスタガード型ＴＰＴについても、
応用できることは言うまでもな、 い。このとき、基
板上にまず高抵抗遮光膜を形成し、その上にソース・ド
レイン電極を形成することになる。Note that although we have described an inverted staggered TPT that has a gate electrode on an insulating substrate,
Regarding the staggered TPT having a drain electrode,
Needless to say, it can be applied. At this time, a high-resistance light-shielding film is first formed on the substrate, and then source/drain electrodes are formed on it.
以上のように本発明によれば、イメージセンサの隣接す
る個別電極間に高抵抗遮光膜を形成する東
が実現される。また、薄膜トランジスタの遮光膜として
、ａ−ＧａＡｓ：Ｈなどの高抵抗並光膜を設けることで
、オフ電、流の低減を実現でき、高精細かつ階調表示可
能なａ−Ｓｉ％ｉ膜トランジス、夕が得られる。As described above, according to the present invention, it is possible to form a high resistance light shielding film between adjacent individual electrodes of an image sensor. In addition, by providing a high-resistance parallel light film such as a-GaAs:H as a light-shielding film for thin film transistors, it is possible to reduce off-state current and current, and to achieve high-definition and gradation display in a-Si%i film transistors. , the evening is obtained.
第１図は本発明による薄膜素子の基本原理を説明する断
面図、第２図は本発明をイメージセンサに実施した例を
示す製造工程図、第３図はａ−３ｔおよびａ−ＧａＡｓ
：Ｈの分光感度特性を示す図、第４図は本発明を実施し
た薄膜トランジスタの製造方法を工程順に示す断面図、
第５図はａ−Ｓｉ ＴＦＴの分光感度特性を示す図、第
６図は本発明の更に別の実施例を示す断面図、第７図は
イメージセンサの断面図、第８図はａ−Ｓｉｍ膜トラン
ジスタを使用した液晶ディスプレイの断面図である。
図において、ａは基板、ｂは下部電極、Ｃは光電変換層
、ｄは上部電極、ｅは高抵抗遮光膜をそれぞれ示す。
特許出願人 富士通株式会社
代理人 弁理士 青 柳 稔
ホ壇細肋狗燻離
第１図
Ｊａｖｅ Ｌｅｒ＋ｇｔ）＋ （ｎｒｎ）ａ−ｓ； ｃ
ｍ ａ−ａｔｍ：ｌ−Ｉ Ｌ：Ａる噴Ｉ力梗諮ＪＬ句テ
リ 勧
５ＰＪ′６凶
Ｗａｖｅｌｅｒｆｈ （ｎｍ）
ａ−６訂Ｆ：Ｔｅ械胸眼也
第５図
第６図
第８図FIG. 1 is a cross-sectional view explaining the basic principle of a thin film element according to the present invention, FIG. 2 is a manufacturing process diagram showing an example of implementing the present invention in an image sensor, and FIG. 3 is a-3T and a-GaAs.
: A diagram showing the spectral sensitivity characteristics of H; FIG.
Fig. 5 is a diagram showing the spectral sensitivity characteristics of a-Si TFT, Fig. 6 is a cross-sectional view showing another embodiment of the present invention, Fig. 7 is a cross-sectional view of an image sensor, and Fig. 8 is a diagram showing the a-Si TFT. 1 is a cross-sectional view of a liquid crystal display using film transistors. In the figure, a represents a substrate, b represents a lower electrode, C represents a photoelectric conversion layer, d represents an upper electrode, and e represents a high-resistance light-shielding film. Patent Applicant: Fujitsu Limited Agent, Patent Attorney: Minoru Aoyagi
m a-atm: l-I L: Aruki Ikyou Kousin JL phrase teri kan5PJ'6KyouWavelerfh (nm) a-6 revision F: Te machine chest eye figure 5 figure 6 figure 8
Claims (6)
な薄膜素子において、 光照射による特性低下を防止するための遮光膜として、
高抵抗遮光膜を積層してなることを特徴とする薄膜素子
。(1) As a light shielding film to prevent characteristic deterioration due to light irradiation in thin film devices such as image sensors and thin film transistors.
A thin film element characterized by being formed by laminating high-resistance light-shielding films.
基板上に、光電変換層、透明電極を積層してなるイメー
ジセンサであり、かつその隣接する個別電極間に前記高
抵抗遮光膜を具備することを特徴とする特許請求の範囲
第（１）項記載の薄膜素子。(2) The thin film element is an image sensor in which a photoelectric conversion layer and a transparent electrode are laminated on an insulating substrate on which a metal electrode is formed, and the high resistance light shielding film is formed between adjacent individual electrodes. A thin film element according to claim (1), characterized in that it comprises:
けられ、該ゲート電極を覆ってゲート絶縁膜、活性層が
設けられ、該活性層を挟んで、該活性層上同一平面にソ
ース電極とドレイン電極とが設けられてなる薄膜トラン
ジスタであり、かつ該活性層上部が第２の絶縁層で覆わ
れ、このチャンネル部上部の第２の絶縁層上に前記高抵
抗遮光膜が設けられてなることを特徴とする特許請求の
範囲第（１）項記載の薄膜素子。(3) In the thin film element, a gate electrode is provided on an insulating substrate, a gate insulating film and an active layer are provided covering the gate electrode, and a source is provided on the same plane on the active layer with the active layer in between. A thin film transistor comprising an electrode and a drain electrode, an upper part of the active layer is covered with a second insulating layer, and the high-resistance light-shielding film is provided on the second insulating layer above the channel part. A thin film element according to claim (1), characterized in that:
（Ω−ｃｍ）＾−＾１、光学ギャップＥｇ＜１．４ｅＶ
を有するものであることを特徴とする特許請求の範囲第
（２）項または（３）項記載の薄膜素子。(4) The high-resistance light-shielding film has a conductivity σ<10^-^8
(Ω-cm)^-^1, optical gap Eg<1.4eV
A thin film element according to claim (2) or (3), characterized in that it has:
ることを特徴とする特許請求の範囲第（２）項または（
３）項記載の薄膜素子。(5) Claim (2) or (2) characterized in that the high resistance light shielding film is a-GaAs:H.
3) The thin film element described in item 3).
−Ｓｉ／ｉａ−Ｓｉまたはｎ＾＋ａ−Ｓｉ／ｉａ−Ｓｉ
膜で構成されることを特徴とする特許請求の範囲第（２
）項または（３）項記載の薄膜素子。(6), the photoelectric conversion layer is a-Si or p^+a
-Si/ia-Si or n^+a-Si/ia-Si
Claim No. 2 characterized in that it is composed of a membrane.
) or (3).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61061878A JPS62219567A (en) | 1986-03-19 | 1986-03-19 | Thin-film element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61061878A JPS62219567A (en) | 1986-03-19 | 1986-03-19 | Thin-film element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62219567A true JPS62219567A (en) | 1987-09-26 |
Family
ID=13183832
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61061878A Pending JPS62219567A (en) | 1986-03-19 | 1986-03-19 | Thin-film element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62219567A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018016181A1 (en) * | 2016-07-20 | 2018-01-25 | ソニー株式会社 | Light reception element, light reception element manufacturing method, imaging apparatus, and electronic device |
-
1986
- 1986-03-19 JP JP61061878A patent/JPS62219567A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018016181A1 (en) * | 2016-07-20 | 2018-01-25 | ソニー株式会社 | Light reception element, light reception element manufacturing method, imaging apparatus, and electronic device |
| KR20190028376A (en) * | 2016-07-20 | 2019-03-18 | 소니 주식회사 | Receiving element, a method of manufacturing a light-receiving element, an imaging apparatus, and an electronic apparatus |
| JPWO2018016181A1 (en) * | 2016-07-20 | 2019-05-09 | ソニー株式会社 | Light receiving element, method of manufacturing light receiving element, imaging device and electronic apparatus |
| US10818718B2 (en) | 2016-07-20 | 2020-10-27 | Sony Corporation | Light receiving element, method of manufacturing light receiving element, imaging device, and electronic apparatus |
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