JPS6221407B2 - - Google Patents
Info
- Publication number
- JPS6221407B2 JPS6221407B2 JP54066075A JP6607579A JPS6221407B2 JP S6221407 B2 JPS6221407 B2 JP S6221407B2 JP 54066075 A JP54066075 A JP 54066075A JP 6607579 A JP6607579 A JP 6607579A JP S6221407 B2 JPS6221407 B2 JP S6221407B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- wave filter
- comb
- filter element
- surface wave
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 244000126211 Hericium coralloides Species 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 7
- 238000001514 detection method Methods 0.000 claims description 4
- 238000005530 etching Methods 0.000 description 16
- 238000000034 method Methods 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000010897 surface acoustic wave method Methods 0.000 description 2
- ILBBNQMSDGAAPF-UHFFFAOYSA-N 1-(6-hydroxy-6-methylcyclohexa-2,4-dien-1-yl)propan-1-one Chemical compound CCC(=O)C1C=CC=CC1(C)O ILBBNQMSDGAAPF-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Description
【発明の詳細な説明】
本発明は表面波フイルター素子に関するもので
ある。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a surface wave filter element.
従来の表面波フイルター素子は第１図及び第２
図に示すような構造を有している。 Conventional surface wave filter elements are shown in Figures 1 and 2.
It has a structure as shown in the figure.
即ちLiTaO3，LiNbO3、セラミツクスなどから
なる圧電基板１の一主面上に導電部材によりそれ
ぞれ形成された互いに噛合つた櫛形の入力電極２
と、この入力電極２に連接されたシールド電極３
と、このシールド電極３を介して、前記入力電極
２に対設され、同じく互いに噛み合つた櫛形の出
力電極４と前記入力電極２の一部及び出力電極４
に沿つて設けられた吸音剤層５からなり、入力電
極２は櫛歯部２ａ、及びこの櫛歯部２ａを連接す
る支持部２ｂから構成され、また出力電極４も櫛
歯部４ａ及びこの櫛歯部４ａを連接する支持部４
ｂから構成され、この入力電極２の支持部２ｂに
印加される所定の周波数を有する信号電圧のみを
出力電極４の支持部４ｂに圧電基板１の表面波を
利用して有効に伝達するようになつている。 That is, interlocking comb-shaped input electrodes 2 are each formed of a conductive material on one main surface of a piezoelectric substrate 1 made of LiTaO 3 , LiNbO 3 , ceramics, or the like.
and a shield electrode 3 connected to this input electrode 2.
A comb-shaped output electrode 4 and a part of the input electrode 2 and the output electrode 4 are arranged opposite to the input electrode 2 through the shield electrode 3 and are also interlocked with each other.
The input electrode 2 is composed of a comb-teeth portion 2a and a support portion 2b connecting the comb-teeth portion 2a, and the output electrode 4 is also composed of a comb-teeth portion 4a and a support portion 2b that connects the comb-teeth portion 2a. Support part 4 connecting tooth part 4a
b, so that only a signal voltage having a predetermined frequency applied to the support portion 2b of the input electrode 2 is effectively transmitted to the support portion 4b of the output electrode 4 by using the surface waves of the piezoelectric substrate 1. It's summery.
この様な構造からなる表面波フイルター素子は
通常次の様な製造方法によつて作られる。 A surface wave filter element having such a structure is usually manufactured by the following manufacturing method.
即ち先ず圧電部材からなるウエフアにアルミニ
ウム膜などを蒸気などの手段により所望厚に形成
する。次にこのアルミニウム膜上に感光性樹脂膜
を被着し、その上に多数個の表面波フイルター素
子形成用のマスクを密接させる。次にマスクを介
して露光し、前記感光性樹脂膜の所望部を光硬化
させ、未露光部を現像除去する。次にエツチング
を行ない、アルミニウム膜の所望部をエツチング
除去し、最終的な電極寸法を形成する。次にアル
ミニウム膜面、傷などを検査し、吸音剤を塗布し
た後、１個ずつの表面波フイルター素子に分割す
る。最後にこの表面波フイルター素子をステム上
に載置し、ステムピンと電極間をボンデングし、
更にシエルをかぶせて表面波フイルター装置が得
られる。 That is, first, an aluminum film or the like is formed to a desired thickness on a wafer made of a piezoelectric material by means of steam or the like. Next, a photosensitive resin film is deposited on this aluminum film, and a mask for forming a large number of surface wave filter elements is closely placed thereon. Next, the photosensitive resin film is exposed to light through a mask to photocure desired portions of the photosensitive resin film, and the unexposed portions are developed and removed. Next, etching is performed to remove a desired portion of the aluminum film to form the final electrode dimensions. Next, the aluminum film surface is inspected for scratches, etc., a sound absorbing agent is applied, and the aluminum film is divided into individual surface wave filter elements. Finally, place this surface wave filter element on the stem, bond between the stem pin and the electrode,
Further, by covering with a shell, a surface wave filter device is obtained.
前述した諸工程に於て、最も重要な工程は表面
波フイルター素子の周波数特性などを決定する第
２図に示す電極寸法即ち櫛歯部の幅寸法６，７及
び間隔寸法８であり、これらの電極寸法はマスク
に形成された電極形状によりほぼ決定されるが、
アルミニウム膜の厚さ、感光性樹脂膜の厚さ及び
塗布条件、エツチング時間、エツチング液の新
旧、露光時の照度、露光時間などにより変化して
くる。 In the various steps described above, the most important steps are the electrode dimensions shown in FIG. The electrode dimensions are mostly determined by the electrode shape formed on the mask, but
It varies depending on the thickness of the aluminum film, the thickness of the photosensitive resin film, coating conditions, etching time, whether the etching solution is new or old, the illuminance during exposure, the exposure time, etc.
このエツチング工程は、例えばガラスなどに形
成されたマスクの形状により、エツチング時間を
制御して表面波フイルター素子の例えば入力電極
２の間隔寸法８によつて決定しているが、最終段
階に於ては、エツチング工程後の実際の間隔寸法
８を顕微鏡などで測定しているのが現状である。 In this etching process, the etching time is controlled by the shape of a mask formed, for example, on glass, and is determined by the spacing dimension 8 of the input electrodes 2 of the surface acoustic wave filter element. Currently, the actual distance dimension 8 after the etching process is measured using a microscope or the like.
然るに前述したように櫛歯部２ａの間隔寸法８
を顕微鏡などで測定すると、この櫛歯部２ａなど
にこの顕微鏡のレンズが当接して傷をつけやすい
し、また表面波フイルター素子の品種により間隔
寸法８などの櫛歯部の電極寸法が異なるため、間
隔寸法８などを測定した後に更に品種別のエツチ
ングされた量を算出する工程が必要となる。即ち
エツチング工程に於て、目視の感覚により櫛歯部
２ａの電極寸法を決定するとき、品種別にこの電
極寸法が異なるためエツチング作業が極めて困難
である。このことは出力電極４の櫛歯部４ａに於
ても同様である。 However, as mentioned above, the interval dimension 8 of the comb tooth portions 2a
When measured with a microscope, etc., the lens of the microscope comes into contact with the comb teeth 2a, etc., and is likely to cause scratches.Also, the electrode dimensions of the comb teeth, such as the interval dimension 8, vary depending on the type of surface wave filter element. , interval dimension 8, etc., it is necessary to further calculate the etched amount for each product type. That is, in the etching process, when determining the electrode size of the comb tooth portion 2a by visual sense, the etching process is extremely difficult because the electrode size differs depending on the product type. This also applies to the comb tooth portion 4a of the output electrode 4.
更にエツチング工程にばらつきがあると、櫛歯
部２ａ，４ａそれぞれ短縮したり、または一部が
切除されたりするため、表面波フイルター素子自
身の周波数特性も変動し、電極容量や挿入損失の
ばらつきが大となり、品質が低下するという欠点
があつた。 Furthermore, if there are variations in the etching process, each of the comb teeth 2a and 4a may be shortened or a portion thereof may be removed, resulting in variations in the frequency characteristics of the surface acoustic wave filter element itself, resulting in variations in electrode capacitance and insertion loss. The problem was that it became larger and the quality deteriorated.
本発明は前述した従来の欠点に鑑みなされたも
のであり、エツチング工程に於ける電極寸法を簡
単に検査することが可能な表面波フイルター素子
を提供することを目的としている。 The present invention has been made in view of the above-mentioned conventional drawbacks, and an object of the present invention is to provide a surface wave filter element that allows easy inspection of electrode dimensions during the etching process.
次に本発明の表面波フイルター素子１の実施例
を第３図乃至第５図によつて説明する。 Next, an embodiment of the surface wave filter element 1 of the present invention will be described with reference to FIGS. 3 to 5.
即ちLiTaO3，LiNbO3、セラミツクスなどから
なる圧電基板１１の一主面上に形成され互いに噛
合つた櫛形の入力電極１２と、この入力電極１２
に連接されたシールド電極１３と、このシールド
電極１３を介して前記入力電極１２に対設され、
同じく互いに噛み合つた櫛形の出力電極１４と、
前記入力電極１２の一部及び出力電極１４に沿つ
て設けられた吸音剤層１５からなり、入力電極１
２は櫛歯部１２ａ及びこの櫛歯部１２ａを連接す
る支持部１２ｂから形成され、また出力電極１４
は櫛歯部１４ａ及びこの櫛歯部１４ａを連接する
支持部１４ｂから形成され、この入力電極１２の
支持部１２ｂに印加される所定の周波数を有する
信号電圧のみを出力電極１４の支持部１４ｂに圧
電基板１１の表面波を利用して有効に伝達するよ
うになつているものは従来のものとほぼ同様であ
るが、本実施例に於ては、支持部１２ｂのＡ部及
びＢ部にそれぞれ第４図及び第５図に示す櫛歯部
１２ａの幅寸法１６，１７、間隔寸法１８を検出
する櫛歯部の電極寸法検出用開口パターン１９及
びまたは品名などの記号検出用開口パターン２０
が配設されていることを特徴としている。 That is, a comb-shaped input electrode 12 formed on one main surface of a piezoelectric substrate 11 made of LiTaO 3 , LiNbO 3 , ceramics, etc. and interlocked with each other;
a shield electrode 13 connected to the input electrode 12, and a shield electrode 13 connected to the input electrode 12,
comb-shaped output electrodes 14 that also interlock with each other;
Consisting of a sound absorbing material layer 15 provided along a part of the input electrode 12 and the output electrode 14, the input electrode 1
2 is formed from a comb tooth portion 12a and a support portion 12b connecting the comb tooth portion 12a, and an output electrode 14
is formed from a comb-teeth portion 14a and a support portion 14b connecting the comb-teeth portion 14a, and transmits only a signal voltage having a predetermined frequency applied to the support portion 12b of the input electrode 12 to the support portion 14b of the output electrode 14. The parts that effectively transmit using the surface waves of the piezoelectric substrate 11 are almost the same as the conventional ones, but in this embodiment, the parts A and B of the support part 12b are provided with An aperture pattern 19 for detecting the electrode dimensions of the comb-teeth portion for detecting the width dimensions 16, 17 and interval dimensions 18 of the comb-teeth portion 12a shown in FIGS. 4 and 5 and/or an aperture pattern 20 for detecting symbols such as product names.
It is characterized by being provided with.
次に第４図によりパターン１９を説明する。 Next, pattern 19 will be explained with reference to FIG.
即ちパターン１９は４個の開口部１９ａ，１９
ｂ，１９ｃ，１９ｄ間に電極寸法、例えば幅寸法
１６，１７及び間隔寸法１８のうち、間隔寸法１
８を最適エツチングした時になくなる幅を有する
ブリツヂ１９１エツチング過度の時になくなる幅
を有するブリツヂ１９２エツチング不足の時に残
る幅を有するブリツヂ１９３と、それぞれ幅の異
なるブリツヂを設け、前述したような製造工程に
於けるエツチング量をこのブリツヂ１９１，１９
２，１９３を目視することにより簡単に判別する
ことが可能である。第５図の２１Ｓは表面波フイ
ルター素子の品種を示す記号検出用開口パターン
２０であり、このパターン２０を目視することに
より、この品種に適した櫛歯部１２ａの幅寸法１
６，１７間隔寸法１８を求めることが出来る。 That is, the pattern 19 has four openings 19a, 19
Between the electrode dimensions b, 19c, and 19d, for example, the interval dimension 1 among the width dimensions 16 and 17 and the interval dimension 18.
A bridge 19 having a width that disappears when etching is performed to the optimum level 1 A bridge 19 having a width that disappears when etching is excessive 2 A bridge 19 having a width that remains when etching is insufficient The amount of etching in the process is
2 , 19 3 can be easily distinguished by visually observing. Reference numeral 21S in FIG. 5 is an aperture pattern 20 for symbol detection indicating the type of surface wave filter element, and by visually observing this pattern 20, the width dimension 1 of the comb tooth portion 12a suitable for this type
6,17 interval dimension 18 can be determined.
更にパターン１９、品名などのパターン２０そ
の他の開口部を多数設けることにより、周波数特
性に左右されることなく、入力電極１２及びまた
は出力電極１４の電極容量、インピーダンス、電
極抵抗などを制御することが可能となる。 Further, by providing a pattern 19, a pattern 20 such as the product name, and a large number of other openings, it is possible to control the electrode capacitance, impedance, electrode resistance, etc. of the input electrode 12 and/or the output electrode 14 without being affected by the frequency characteristics. It becomes possible.
前記実施例に於ては第４図に示すパターン１９
と第５図に示すパターン２０の両者を設けたが、
これらの一方を形成してもよい。またバターン１
９は第４図に示すもののほか円、三角、その他の
形状が考えられるし、また品名などのパターン２
０も第５図に示すものに限定されるものではな
い。 In the above embodiment, the pattern 19 shown in FIG.
Both the pattern 20 shown in FIG. 5 and the pattern 20 shown in FIG.
Either one of these may be formed. Also Bataan 1
In addition to the shape shown in Fig. 4, 9 may be a circle, triangle, or other shapes, and may also be a pattern 2 such as the product name.
0 is also not limited to what is shown in FIG.
前述のように本発明の表面波フイルター素子に
よれば圧電基板上に導電部材で入力電極や出力電
極を形成するエツチング工程でそれぞれの品種に
最適なエツチングを行なうことが出来るので、所
定の周波数特性を保持することが可能となり、そ
の工業的価値は極めて大である。 As mentioned above, according to the surface wave filter element of the present invention, it is possible to perform the optimum etching for each product type in the etching process of forming input electrodes and output electrodes using a conductive member on a piezoelectric substrate, so that predetermined frequency characteristics can be achieved. This makes it possible to retain the following properties, and its industrial value is extremely large.
第１図は従来の表面波フイルター素子の平面
図、第２図は第１図の１部拡大平面図、第３図は
本発明の表面波フイルター素子の平面図、第４図
は第３図のＡ部拡大図、第５図は第３図のＢ部拡
大図である。
１，１１…圧電基板、２，１２…入力電極、２
ａ，１２ａ，４ａ，１４ａ…櫛歯部、２ｂ，１２
ｂ，４ｂ，１４ｂ…支持部、１９…電極寸法検出
用開口パターン、２０…記号検出用開口パター
ン。
FIG. 1 is a plan view of a conventional surface wave filter element, FIG. 2 is a partially enlarged plan view of FIG. 1, FIG. 3 is a plan view of a surface wave filter element of the present invention, and FIG. 5 is an enlarged view of part A in FIG. 3, and FIG. 5 is an enlarged view of part B in FIG. 1, 11... Piezoelectric substrate, 2, 12... Input electrode, 2
a, 12a, 4a, 14a...comb tooth portion, 2b, 12
b, 4b, 14b...Support part, 19...Aperture pattern for electrode size detection, 20...Aperture pattern for symbol detection.
Claims (1)
極と出力電極とがそれぞれ噛合つた櫛歯部及びこ
の櫛歯部を連接する支持部から構成されてなる表
面波フイルター素子に於て、前記支持部に記号検
出用開口パターンと前記櫛歯部の電極寸法検出用
開口パターンとの少くとも一方が配設されてなる
ことを特徴とする表面波フイルター素子。1. In a surface wave filter element comprising a comb tooth portion in which an input electrode and an output electrode are respectively engaged with each other and a support portion connecting the comb tooth portion, which are formed on one main surface of a piezoelectric substrate, A surface wave filter element characterized in that at least one of an aperture pattern for symbol detection and an aperture pattern for detecting electrode dimensions of the comb tooth portion is disposed on the support portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6607579A JPS55158724A (en) | 1979-05-30 | 1979-05-30 | Surface wave filter element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6607579A JPS55158724A (en) | 1979-05-30 | 1979-05-30 | Surface wave filter element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55158724A JPS55158724A (en) | 1980-12-10 |
| JPS6221407B2 true JPS6221407B2 (en) | 1987-05-12 |
Family
ID=13305357
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6607579A Granted JPS55158724A (en) | 1979-05-30 | 1979-05-30 | Surface wave filter element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55158724A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3234955A1 (en) * | 1982-09-21 | 1984-03-22 | Siemens AG, 1000 Berlin und 8000 München | SURFACE WAVE FILTER AND METHOD FOR PRODUCING THE SURFACE WAVE FILTER |
| JPS606340U (en) * | 1983-06-24 | 1985-01-17 | 株式会社日立製作所 | Miniaturized surface acoustic wave device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4834996A (en) * | 1971-09-09 | 1973-05-23 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5740576Y2 (en) * | 1978-02-17 | 1982-09-06 |
-
1979
- 1979-05-30 JP JP6607579A patent/JPS55158724A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4834996A (en) * | 1971-09-09 | 1973-05-23 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55158724A (en) | 1980-12-10 |
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