JPS62212648A - Photosensitive composition - Google Patents
Photosensitive compositionInfo
- Publication number
- JPS62212648A JPS62212648A JP5754986A JP5754986A JPS62212648A JP S62212648 A JPS62212648 A JP S62212648A JP 5754986 A JP5754986 A JP 5754986A JP 5754986 A JP5754986 A JP 5754986A JP S62212648 A JPS62212648 A JP S62212648A
- Authority
- JP
- Japan
- Prior art keywords
- photosensitive composition
- solvent
- sulfone
- methylpentene
- resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 24
- 229920005989 resin Polymers 0.000 claims abstract description 16
- 239000011347 resin Substances 0.000 claims abstract description 16
- PGMYKACGEOXYJE-UHFFFAOYSA-N pentyl acetate Chemical compound CCCCCOC(C)=O PGMYKACGEOXYJE-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000002904 solvent Substances 0.000 claims abstract description 13
- 229920003986 novolac Polymers 0.000 claims abstract description 11
- QJZCTUDJOKLEPI-UHFFFAOYSA-N 2-methylphenol;2-phenylphenol Chemical group CC1=CC=CC=C1O.OC1=CC=CC=C1C1=CC=CC=C1 QJZCTUDJOKLEPI-UHFFFAOYSA-N 0.000 claims abstract description 5
- WJQOZHYUIDYNHM-UHFFFAOYSA-N 2-tert-Butylphenol Chemical compound CC(C)(C)C1=CC=CC=C1O WJQOZHYUIDYNHM-UHFFFAOYSA-N 0.000 claims description 3
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims description 2
- LLEMOWNGBBNAJR-UHFFFAOYSA-N biphenyl-2-ol Chemical compound OC1=CC=CC=C1C1=CC=CC=C1 LLEMOWNGBBNAJR-UHFFFAOYSA-N 0.000 claims description 2
- 229930003836 cresol Natural products 0.000 claims description 2
- 239000011159 matrix material Substances 0.000 abstract description 4
- QLTCALXWSNPPGR-UHFFFAOYSA-N phenol;2-phenylphenol Chemical group OC1=CC=CC=C1.OC1=CC=CC=C1C1=CC=CC=C1 QLTCALXWSNPPGR-UHFFFAOYSA-N 0.000 abstract description 4
- 239000011248 coating agent Substances 0.000 abstract description 3
- 238000000576 coating method Methods 0.000 abstract description 3
- KKDJFMHJNUBAQQ-UHFFFAOYSA-N 2-butylphenol;2-methylphenol Chemical group CC1=CC=CC=C1O.CCCCC1=CC=CC=C1O KKDJFMHJNUBAQQ-UHFFFAOYSA-N 0.000 abstract 1
- KAHLLPRMTWMMLH-UHFFFAOYSA-N 2-butylphenol;phenol Chemical group OC1=CC=CC=C1.CCCCC1=CC=CC=C1O KAHLLPRMTWMMLH-UHFFFAOYSA-N 0.000 abstract 1
- 239000003795 chemical substances by application Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 19
- 235000012431 wafers Nutrition 0.000 description 12
- 230000035945 sensitivity Effects 0.000 description 9
- 238000010894 electron beam technology Methods 0.000 description 8
- 239000000243 solution Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- MLFHJEHSLIIPHL-UHFFFAOYSA-N isoamyl acetate Chemical compound CC(C)CCOC(C)=O MLFHJEHSLIIPHL-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 4
- WWUVJRULCWHUSA-UHFFFAOYSA-N 2-methyl-1-pentene Chemical compound CCCC(C)=C WWUVJRULCWHUSA-UHFFFAOYSA-N 0.000 description 3
- ZHQGRLLUKPNZPP-UHFFFAOYSA-N 2-tert-butylphenol;2-methylphenol Chemical compound CC1=CC=CC=C1O.CC(C)(C)C1=CC=CC=C1O ZHQGRLLUKPNZPP-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000005865 ionizing radiation Effects 0.000 description 3
- 229940117955 isoamyl acetate Drugs 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- AUDARWUVENLYLT-UHFFFAOYSA-N 2-tert-butylphenol;phenol Chemical compound OC1=CC=CC=C1.CC(C)(C)C1=CC=CC=C1O AUDARWUVENLYLT-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 150000003457 sulfones Chemical class 0.000 description 2
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- 206010011732 Cyst Diseases 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 208000031513 cyst Diseases 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000003504 photosensitizing agent Substances 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
- G03C1/00—Photosensitive materials
- G03C1/72—Photosensitive compositions not covered by the groups G03C1/005 - G03C1/705
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
Abstract
Description
【発明の詳細な説明】 （産業上の利用分野） 本発明は、感光性組成物に関する。[Detailed description of the invention] (Industrial application field) The present invention relates to photosensitive compositions.
（従来の技術）
従来、集積回路素子は、感光性樹脂（）オドレジスト）
を塗布後、マスクを通して紫外、可視光を露光し、適当
な現像液で現像して、微細パターンを形成し、基板のウ
ェットエツチングを行い、更に、不純物ドーピング等の
処置を経て、製造されている。しかし近年、集積回路素
子が、高集積化されるにつれて、更に、微細パターンを
形成することが強く望まれる情勢となっている。(Conventional technology) Conventionally, integrated circuit elements are made of photosensitive resin (odresist).
After coating, it is exposed to ultraviolet and visible light through a mask, developed with an appropriate developer to form a fine pattern, wet etched the substrate, and then undergoes treatments such as impurity doping. . However, in recent years, as integrated circuit elements have become more highly integrated, there has been a strong desire to form even finer patterns.
そのため、紫外、可視光の代りに波長の短い軟Ｘ線、電
子線、遠紫外線及びイオンビーム等を用いて、高精度パ
ターンを形成する技術が展開され始めている。また、ウ
ェットエツチングは、エツチング溶液中に含まれる不純
物による基板への不純物の侵入やエツチング溶液のパタ
ーン下方への侵食（サイドエツチング）等の問題点をも
つため、プラズマ反応性スパッタリング等を用いて、基
板材料を気化侵食するドライエツチング加工に移りつつ
ある。Therefore, techniques for forming highly accurate patterns using soft X-rays, electron beams, deep ultraviolet rays, ion beams, etc. with short wavelengths instead of ultraviolet and visible light are beginning to be developed. In addition, wet etching has problems such as impurities contained in the etching solution entering the substrate and etching solution eroding downwards of the pattern (side etching), so plasma reactive sputtering etc. are used. Dry etching processing, which evaporates and erodes the substrate material, is moving on.
このような情勢から、軟Ｘ線、電子線、遠紫外線および
イオンビーム等の電離放射線用のレジスト材料は、ｌｐ
ｍ以下の高解像度を有し、耐ドライエツチ性が高く、更
には、上記電離放射線に対して高感度である必要がある
。Under these circumstances, resist materials for ionizing radiation such as soft X-rays, electron beams, far ultraviolet rays, and ion beams are
It is necessary to have a high resolution of m or less, high dry etch resistance, and high sensitivity to the above-mentioned ionizing radiation.
現在、高感度、高解像度であり、耐ドライエツチ性が良
いという観点からアルカリ水溶液可容性の樹脂と照射に
よりアルカリ水溶液に対する溶解性が変わる２−メチル
ペンテン−１−スルフォンの組み合わせによるレジスト
が最も広く用いられている。この感光性組成物をスピン
コード法により基板に塗布することによりレジスト薄膜
を形成し、この形成された膜に電離放射線を照射し潜像
を形成し、その後、現像過程を経ることにより微細パタ
ーンが形成される。しかし、アルカリ回答な樹脂も２−
メチルペンテン−１−スルフォンもともに分子量が大き
いポリマーであるので完全に混ざりあった相溶性の良い
薄膜を形成することは困難であった。これまで、このよ
うな溶媒としては、イソアミルアセテート（白石、公開
特許公報昭和５８年第５２６３８号）が提案されている
。Currently, resists based on a combination of alkaline aqueous solution-soluble resins and 2-methylpentene-1-sulfone, whose solubility in alkaline aqueous solutions changes when irradiated, are the most widely used resists because of their high sensitivity, high resolution, and good dry etch resistance. It is used. A thin resist film is formed by applying this photosensitive composition to a substrate using a spin code method, and the formed film is irradiated with ionizing radiation to form a latent image, followed by a development process to form a fine pattern. It is formed. However, resins with alkaline responses are also 2-
Since methylpentene-1-sulfone is also a polymer with a large molecular weight, it was difficult to form a thin film with good compatibility in which the polymers were completely mixed. Hitherto, as such a solvent, isoamyl acetate (Shiraishi, Published Patent Publication No. 52638 of 1982) has been proposed.
（発明が解決しようとする問題点）
しかしこのような溶媒はターシャルブチルフェノール−
フェノール、ターシャルブチルフェノール−クレゾール
、フェニルフェノール−フェノール、フェニルフェノー
ル、クレゾール系のノボラック樹脂に関しては必ずしも
良い溶媒ではなく成膜性が悪かった。従って高解像度が
得られないなどの問題点があった。(Problem to be solved by the invention) However, such a solvent does not contain tert-butylphenol.
Phenol, tert-butylphenol-cresol, phenylphenol-phenol, phenylphenol, and cresol-based novolak resins were not necessarily good solvents and had poor film-forming properties. Therefore, there were problems such as not being able to obtain high resolution.
（問題点を解決するための手段）
本発明はターシャルブチルフェノール−フェノール、タ
ーシャルブチルフェノール−クレゾール、フェニルフェ
ノール−フェノールあるいはフェニルフェノール−クレ
ゾール系のノボラック樹脂より選ばれた少なくとも一種
類の樹脂と２−メチルペンテン−１−スルフォンとを溶
媒に溶かした感光性組成物において、前記溶媒を酢酸−
ｎアミルとしたことを特徴とする感光性組成物である。(Means for Solving the Problems) The present invention provides at least one type of resin selected from tert-butylphenol-phenol, t-butylphenol-cresol, phenylphenol-phenol, or phenylphenol-cresol type novolac resins and 2- In a photosensitive composition in which methylpentene-1-sulfone is dissolved in a solvent, the solvent is replaced with acetic acid-1-sulfone.
This is a photosensitive composition characterized by using n-amyl.
（作用）
本発明者は、種々の有機溶媒をこれら一連のアルカリ可
溶であるターシャルブチルフェノール−フェノール、タ
ーシャルブチルフェノール−クレゾール、フェニルフェ
ノール−クレゾール、フェニルフェノール−フェノール
系のノボラック樹脂に関しては優れた溶媒を検討した結
果、酢酸−ｎアミルが特に優れていることを見いだし本
発明に至った。(Function) The present inventor has found that various organic solvents can be used for a series of alkali-soluble tert-butylphenol-phenol, tert-butylphenol-cresol, phenylphenol-cresol, and phenylphenol-phenol type novolak resins. As a result of examining solvents, it was found that n-amyl acetate was particularly excellent, leading to the present invention.
アルカリ可溶であるマトリクス樹脂および２−メチルペ
ンテン−１，スルフォンは５〜３０重量％混入して、本
発明の有機溶剤に溶かすことにより感光性組成物とする
事が出来る。A photosensitive composition can be prepared by mixing 5 to 30% by weight of alkali-soluble matrix resin and 2-methylpentene-1, sulfone and dissolving them in the organic solvent of the present invention.
（実施例１）
ターシャルブチルフェノール−フェノール系ノボラック
樹脂２ｇ、２−メチルペンテン−１−スルフォン０゜２
ｇを酢酸−ｎアミルに１（ｂｉ量％溶かして感光性組成
物を調製した。この感光性組成物であるレジスト溶液を
用いて、直径２インチのシリコンウェハーに３０００回
転１分でスピンコーティングして１００°Ｃ１３０分の
ベーキングをして５０００Ａの膜厚のレジスト薄膜を得
た。このレジスト膜に１Ｏ−６ｔｏｒｒの真空下で電子
線を照射して潜像を形成して、０．２Ｎ ＮａＯＨで６
０秒現像する事により０．５ｐｍのラインアンドスペー
スのレジストパターンを得た。感度は、１２ｐＣ／ａｍ
２、現像後の残膜率は９０％であった。(Example 1) Tertiary butylphenol-phenolic novolak resin 2g, 2-methylpentene-1-sulfone 0°2
A photosensitive composition was prepared by dissolving 1 (bi amount %) of g in n-amyl acetate. Using a resist solution of this photosensitive composition, a silicon wafer with a diameter of 2 inches was spin-coated at 3000 rpm for 1 minute. A thin resist film with a thickness of 5000 A was obtained by baking at 100°C for 130 minutes.The resist film was irradiated with an electron beam under a vacuum of 1O-6 torr to form a latent image, and then baked with 0.2N NaOH. 6
By developing for 0 seconds, a 0.5 pm line and space resist pattern was obtained. Sensitivity is 12pC/am
2. The residual film rate after development was 90%.
（比較例１）
ターシャルブチルフェノール−フェノール系ノボラック
樹脂２ｇ、２−メチルペンテン、１．スルフォン０゜２
ｇを酢酸エチルセロソルブに１０重量％溶かして感光性
組成物を調製した。この感光性組成物であるレジスト溶
液を用いて、直径２インチのシリコンウェハーに３００
０回転１分でスピンコーティングして１００°Ｃ１３０
分のベーキングをして５０００人の膜厚ρレジスト薄膜
を得た。このレジスト膜に１０＝ｔｏｒｒの真空下で電
子線を照射して潜像を形成して、０．２ＮＮａＯＨで６
０秒現像する事により０．５ｐｍのラインアンドスペー
スのレジストパターンを得ようとしたが、２−メチルペ
ンテン−１−スルフォンとマトリクス樹脂との相溶性が
悪く得られたパターンは非常に表面が荒れていた。感度
は、１２ｐＣ／ｃｍ２、現像後の残膜率は９０％であっ
た。(Comparative Example 1) Tertiary butylphenol-phenolic novolac resin 2g, 2-methylpentene, 1. Sulfone 0゜2
A photosensitive composition was prepared by dissolving 10% by weight of g in ethyl cellosolve acetate. Using this resist solution, which is a photosensitive composition, a silicon wafer with a diameter of 2 inches was coated with 300
Spin coating at 0 rotation for 1 minute at 100°C130
After baking for 5,000 minutes, a ρ resist thin film with a thickness of 5,000 was obtained. This resist film was irradiated with an electron beam under a vacuum of 10 torr to form a latent image, and 6
An attempt was made to obtain a 0.5 pm line and space resist pattern by developing for 0 seconds, but the resulting pattern had a very rough surface due to poor compatibility between 2-methylpentene-1-sulfone and the matrix resin. was. The sensitivity was 12 pC/cm2, and the residual film rate after development was 90%.
（比較例２）
ターシャルブチルフェノール−フェノール系ノボラック
樹脂２ｇ、２−メチルペンテン−１−スルフォン０゜２
ｇをイソアミルアセテートに１０重量％溶かして感光性
組成物を調製した。この感光性組成物であるしシスト溶
液を用いて、直径２インチのシリコンウェハーに３００
０回転１分でスピンコーティングして１００°Ｃ１３０
分のベーキングをして５０００Ａの膜厚のレジスト薄膜
を得た。このレジスト膜に１０＝ｔｏｒｒの真空下で電
子線を照射して潜像を形成して、０．２ＮＮａＯＨで６
０秒現像する事により０．５ｐｍのラインアンドスペー
スのレジストパターンを得た。感度は、１２μＣ／ｃｍ
２、現像後の残膜率は９０％であった。しかし、成膜性
に少々問題がありウェハー内の膜厚の均一性はあまり良
くなくウェハ内で中心部と周辺部のパターン精度が異な
っていた。(Comparative Example 2) Tertiary butylphenol-phenolic novolac resin 2g, 2-methylpentene-1-sulfone 0°2
A photosensitive composition was prepared by dissolving 10% by weight of g in isoamyl acetate. Using this photosensitive composition and cyst solution, 300 ml of photosensitive material was applied to a silicon wafer with a diameter of 2 inches.
Spin coating at 0 rotation for 1 minute at 100°C130
After baking for 30 minutes, a resist thin film with a thickness of 5000 Å was obtained. This resist film was irradiated with an electron beam under a vacuum of 10 torr to form a latent image, and 6
By developing for 0 seconds, a 0.5 pm line and space resist pattern was obtained. Sensitivity is 12μC/cm
2. The residual film rate after development was 90%. However, there were some problems with film formation, and the uniformity of the film thickness within the wafer was not very good, resulting in differences in pattern precision between the center and the periphery within the wafer.
（実施例２）
ターシャルブチルフェノール−フェノール系ノボラック
樹脂２ｇ、２−メチルペンテン−１−スルフォン０゜２
ｇを酢酸−ｎアミルに２０重量％溶かして感光性組成物
を調製した。この感光性組成物であるレジスト溶液を用
いて、直径２インチのシリコンウェハーに３０００回転
１分でスピンコーティングして１００°Ｃ１３０分のベ
ーキングをして１００ＯＯＡの膜厚のレジスト薄膜を得
た。このレジスト膜に１Ｏ−６ｔｏｒｒの真空下で電子
線を照射して潜像を形成して、０．２Ｎ ＮａＯＨで９
０秒現像する事により０．５１１ｍのラインアンドスペ
ースのレジストパターンを得た。感度は、１２ｐＣ／ａ
ｍ２、現像後の残膜率は９０％であった。(Example 2) Tertiary butylphenol-phenolic novolac resin 2g, 2-methylpentene-1-sulfone 0°2
A photosensitive composition was prepared by dissolving 20% by weight of g in n-amyl acetate. Using this photosensitive composition resist solution, a silicon wafer having a diameter of 2 inches was spin-coated at 3000 rpm for 1 minute and baked at 100° C. for 130 minutes to obtain a resist thin film with a thickness of 100 OOA. This resist film was irradiated with an electron beam under a vacuum of 1O-6 torr to form a latent image, and then exposed to 0.2N NaOH to form a latent image.
By developing for 0 seconds, a line and space resist pattern of 0.511 m was obtained. Sensitivity is 12pC/a
m2, and the residual film rate after development was 90%.
（比較例３）
ターシャルブチルフェノール−フェノール系ノボラック
樹脂２ｇ、２−メチルペンテン−１−スルフォン０゜２
ｇをイソアミルアセテートに２０重量％溶がして感光性
組成物を調製した。この感光性組成物であるレジスト溶
液を用いて、直径２インチのシリコンウェハーに３００
０回転１分でスピンコーティングして１００°Ｃ１３０
分のベーキングをして１００００人の膜厚のレジスト薄
膜を得た。しがし、ウェハー内で中央の膜厚が極端に厚
くなっていた。このレジスト膜に１叶６ｔｏｒｒの真空
下で電子線を照射して潜像を形成して、０．２Ｎ Ｎａ
ＯＨで９０秒現像する事により０゜５ｐｍのラインアン
ドスペースのレジストパターンを得た。感度は、１２ｐ
Ｃ／ａｍ２、現像後の残膜率は９０％であったが、膜厚
がウェハの中心部と周辺部で異なるためウェハーの中央
と端で解像度および感度がかなりことなっていた。(Comparative Example 3) Tertiary butylphenol-phenolic novolak resin 2g, 2-methylpentene-1-sulfone 0°2
A photosensitive composition was prepared by dissolving 20% by weight of g in isoamyl acetate. Using this resist solution, which is a photosensitive composition, a silicon wafer with a diameter of 2 inches was coated with 300
Spin coating at 0 rotation for 1 minute at 100°C130
After baking for 10 minutes, a resist thin film with a thickness of 10,000 wafers was obtained. However, the film thickness at the center of the wafer was extremely thick. This resist film is irradiated with an electron beam under a vacuum of 6 torr to form a latent image.
By developing with OH for 90 seconds, a 0°5 pm line and space resist pattern was obtained. Sensitivity is 12p
C/am2 and the residual film rate after development were 90%, but because the film thickness was different between the center and the periphery of the wafer, the resolution and sensitivity were considerably different between the center and the edge of the wafer.
（実施例３）
フェニルフェノール−クレゾール系ノボラック樹脂２ｇ
、２．メチルペンテン−１−スルフォン０．２ｇヲ酢酸
−ｎアミルに１０重量％溶かして感光性組成物を調製し
た。この感光性組成物であるレジスト溶液を用いて、直
径２インチのシリコンウェハーに３０００回転１分でス
ピンコーティングして１００°Ｃ１３０分のベーキング
をして５０００Ａの膜厚のレジスト薄膜を得た。非常に
均一なレジスト薄膜が得られた。１Ｏ−６ｔｏｒｒの真
空下で電子線を照射して潜像を形成して、０．２ＮＮａ
ＯＨで９０秒現像する事により０．５μｍのラインアン
ドスペースのレジストパターンを得た。感度は、１２ｐ
Ｃ／ｃｍ２、現像後の残膜率は９０％であった。(Example 3) 2 g of phenylphenol-cresol novolak resin
, 2. A photosensitive composition was prepared by dissolving 0.2 g of methylpenten-1-sulfone in 10% by weight of n-amyl acetate. Using the resist solution of this photosensitive composition, a silicon wafer having a diameter of 2 inches was spin-coated at 3000 rpm for 1 minute and baked at 100° C. for 130 minutes to obtain a resist thin film with a thickness of 5000 Å. A very uniform resist film was obtained. A latent image was formed by irradiating an electron beam under a vacuum of 1O-6torr to form a
By developing with OH for 90 seconds, a 0.5 μm line-and-space resist pattern was obtained. Sensitivity is 12p
C/cm2, and the residual film rate after development was 90%.
（発明の効果）
以上発明したように、本発明である感光性組成物は、塗
布溶媒のためにマトリクス樹脂と感光剤である２−メチ
ルペンテン−１−スルフォンの相溶性が良く、成膜性が
よいので解像度が優れている効果代理人弁理士 内 原
省セ；、−，／ゝ −４＋(Effects of the Invention) As invented above, the photosensitive composition of the present invention has good compatibility between the matrix resin and the photosensitizer 2-methylpentene-1-sulfone for the coating solvent, and has good film-forming properties. An effective patent attorney with excellent resolution because of its good resolution.
Claims (1)
ブチルフェノール−クレゾール、フェニルフェノール−
フェノールあるいはフェニルフェノール−クレゾール系
のノボラック樹脂より選ばれた少なくとも一種類の樹脂
と２−メチルペンテン−１−スルフォンとを溶媒に溶か
した感光性組成物において、前記溶媒を酢酸−ｎアミル
としたことを特徴とする感光性組成物。Tertiary butylphenol - phenol, tertiary butylphenol - cresol, phenylphenol -
A photosensitive composition in which at least one resin selected from phenol or phenylphenol-cresol type novolac resins and 2-methylpenten-1-sulfone are dissolved in a solvent, wherein the solvent is n-amyl acetate. A photosensitive composition characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5754986A JPS62212648A (en) | 1986-03-14 | 1986-03-14 | Photosensitive composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5754986A JPS62212648A (en) | 1986-03-14 | 1986-03-14 | Photosensitive composition |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62212648A true JPS62212648A (en) | 1987-09-18 |
Family
ID=13058868
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5754986A Pending JPS62212648A (en) | 1986-03-14 | 1986-03-14 | Photosensitive composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62212648A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63217346A (en) * | 1987-03-05 | 1988-09-09 | Sumitomo Chem Co Ltd | Positive type resist composition |
| JPH03152544A (en) * | 1989-10-23 | 1991-06-28 | Internatl Business Mach Corp <Ibm> | Highly sensible dry type developable photoresist for deep up light |
| JPH03206458A (en) * | 1989-03-14 | 1991-09-09 | Internatl Business Mach Corp <Ibm> | Chemically enlarged photoresist |
-
1986
- 1986-03-14 JP JP5754986A patent/JPS62212648A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63217346A (en) * | 1987-03-05 | 1988-09-09 | Sumitomo Chem Co Ltd | Positive type resist composition |
| JPH03206458A (en) * | 1989-03-14 | 1991-09-09 | Internatl Business Mach Corp <Ibm> | Chemically enlarged photoresist |
| JPH03152544A (en) * | 1989-10-23 | 1991-06-28 | Internatl Business Mach Corp <Ibm> | Highly sensible dry type developable photoresist for deep up light |
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