JPS6221166B2 - - Google Patents
Info
- Publication number
- JPS6221166B2 JPS6221166B2 JP5529778A JP5529778A JPS6221166B2 JP S6221166 B2 JPS6221166 B2 JP S6221166B2 JP 5529778 A JP5529778 A JP 5529778A JP 5529778 A JP5529778 A JP 5529778A JP S6221166 B2 JPS6221166 B2 JP S6221166B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- heat generating
- recording head
- magnetic
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 11
- 239000010409 thin film Substances 0.000 claims description 5
- 239000012212 insulator Substances 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 21
- 239000000758 substrate Substances 0.000 description 15
- 239000000696 magnetic material Substances 0.000 description 8
- 230000004907 flux Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
Landscapes
- Magnetic Heads (AREA)
Description
【発明の詳細な説明】
本発明は、磁気記録ヘツドに関し、希土類−遷
移金属の非晶質磁性薄膜で研究されている熱磁気
書込みにおいて、熱源に半導体のPN接合、ヘテ
ロ接合等の電気的障壁を持つ部分を使用し、その
部分に電流を流し熱を発生するものを利用し書込
むようにしたもので、その特徴は、熱源の応答速
度の速いこと、熱源の面積および集中性が良いこ
と、加工がしやすいこと、装置の小形化、多チヤ
ンネル化の容易性などが達成されるようにしたも
のである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a magnetic recording head, and the present invention relates to thermomagnetic writing, which is being studied using amorphous magnetic thin films made of rare earth-transition metals. This device uses a part with a holder, and writes by passing a current through that part and using something that generates heat.The characteristics are that the response speed of the heat source is fast, and the area and concentration of the heat source are good. , ease of processing, miniaturization of the device, ease of multichannelization, etc. are achieved.
現在研究的に熱磁気書込みが研究されている
が、熱源としてはレーザ等を利用したもので、そ
の装置は非常に大形のものである。 Thermomagnetic writing is currently being researched, but it uses a laser or the like as a heat source, and the device is very large.
本発明は、熱を発生する半導体の構造とそれを
多数個並べる構造、それにヘツド部を冷却する構
造についてのものである。 The present invention relates to a structure of a semiconductor that generates heat, a structure in which a large number of semiconductors are arranged, and a structure that cools a head portion.
第１図は本発明による磁気記録ヘツドの要部の
基本構造を示す図である。 FIG. 1 is a diagram showing the basic structure of the main parts of a magnetic recording head according to the present invention.
第１図イは平面図、第１図ロは正面図である。
図において、１は半導体基板であり、Si、Geそ
の他化合物からなる半導体基板である。ここでは
一例として半導体基板はＮ形のSiの単結晶とす
る。２は基板１に形成されたＰ形層でプラナ方式
で形成される。表面はSiO2の保護膜（絶縁物）
で保護されている。３はＰ形層２からオーミツク
コンタクトを取出す穴、４は電極（金属）であ
る。基板１のＮ形の層とＰ形の層２との接合であ
るPN層の一端である端面ではPNの接合層は表面
に現れている。５はその保護層（絶縁層）で、
SiO2、または窒化物の薄膜層である。６はアモ
ルフアス磁性層である。７は個々の素子を温度的
に絶縁するＶ形溝の空隙層である。この空隙層７
は基板１の結晶軸を選び選択エツチングによつて
形成される。８は端面に現れた接合部を示す。ま
た基板１の裏面には共通の電極９が設けられてい
る。 FIG. 1A is a plan view, and FIG. 1B is a front view.
In the figure, 1 is a semiconductor substrate, which is made of Si, Ge, or other compounds. Here, as an example, the semiconductor substrate is an N-type Si single crystal. Reference numeral 2 denotes a P-type layer formed on the substrate 1 using a planar method. The surface is a protective film of SiO 2 (insulator)
protected. 3 is a hole for taking out an ohmic contact from the P-type layer 2, and 4 is an electrode (metal). At the end surface, which is one end of the PN layer, which is the junction between the N-type layer and the P-type layer 2 of the substrate 1, the PN bonding layer appears on the surface. 5 is its protective layer (insulating layer),
It is a thin film layer of SiO 2 or nitride. 6 is an amorphous magnetic layer. Reference numeral 7 denotes a V-groove void layer that thermally insulates individual elements. This void layer 7
is formed by selecting the crystal axis of the substrate 1 and performing selective etching. 8 indicates a joint appearing on the end surface. Further, a common electrode 9 is provided on the back surface of the substrate 1.
次にその動作について説明すると、電極４と９
の間に電圧が加えられると、接合部８ではPN接
合の順バイアスの場合は、順方向電流による損失
によつて熱が発生し、また逆バイアスの場合は、
ツエナー効果またはアバランセ効果により、電流
が流れることによる損失によつて接合面に熱が発
生する。この熱によつて絶縁層５を介したアモル
フアス磁性層６が熱せられ、抗磁力が下がつた時
に外部から磁界を加え信号を書込む。アモルフア
ス磁性体はTb−Fe系のものがよい。抗磁力の下
がつた状態で書込み、その後接合に流す電流を切
ると、熱は拡散して冷却し、アモルフアス磁性体
の抗磁力は上昇する。そして磁気記録媒体へは、
抗磁力の上昇したアモルフアス磁性体を接触させ
転写させることによつて記録する。この際記録媒
体よりアモルフアス磁性体の抗磁力が大きくなけ
ればならない。 Next, to explain its operation, electrodes 4 and 9
When a voltage is applied to the junction 8, heat is generated due to loss due to forward current in the case of a forward bias of the PN junction, and in the case of a reverse bias, heat is generated at the junction 8.
Due to the Zener effect or the avalanche effect, heat is generated at the bonding surface due to losses due to the flow of current. This heat heats the amorphous magnetic layer 6 via the insulating layer 5, and when the coercive force decreases, a magnetic field is applied from the outside to write a signal. The amorphous magnetic material is preferably Tb-Fe based. When writing is performed with the coercive force decreasing, and then the current flowing through the junction is cut off, the heat is diffused and cooled, and the coercive force of the amorphous magnetic material increases. And for magnetic recording media,
Recording is performed by bringing an amorphous magnetic material with increased coercive force into contact and transferring it. At this time, the coercive force of the amorphous magnetic material must be greater than that of the recording medium.
第２図は、発熱機構においてトランジスタのコ
レクタ損失を利用する場合についての説明図であ
り、第２図イは平面図、第２図ロは正面図であ
る。図において、１０は基板であり、ここの説明
では単結晶Siを使用したことを例に説明する。こ
の基板１０はＮ形であり、各素子共通のコレクタ
電極１１が裏面より取り出されている。 FIG. 2 is an explanatory diagram of the case where the collector loss of a transistor is utilized in the heat generation mechanism, and FIG. 2A is a plan view, and FIG. 2B is a front view. In the figure, reference numeral 10 denotes a substrate, and the explanation here will be based on an example in which single-crystal Si is used. This substrate 10 is of N type, and a collector electrode 11 common to each element is taken out from the back surface.
１２はＰ形のベース層であり、電極１３が取り
出される。１４はＮ形のエミツタ領域であり、電
極１５が取り出される。第２図ロで示す前端面は
コレクタ層とベース層の接合面が現われるように
加工されるので、表面には絶縁層１６が設けられ
る。１７はアモルフアス磁性層である。１８は各
素子間の熱的な絶縁をほどこすＶ溝である。１９
はコレクタとベースの接合面を示す。 12 is a P-type base layer, from which an electrode 13 is taken out. 14 is an N-type emitter region, from which an electrode 15 is taken out. Since the front end surface shown in FIG. 2B is processed so that the bonding surface between the collector layer and the base layer appears, an insulating layer 16 is provided on the front end surface. 17 is an amorphous magnetic layer. 18 is a V-groove that provides thermal insulation between each element. 19
indicates the joint surface between the collector and the base.
そしてその動作機構は、コレクタである基板１
０にプラスの電位を、エミツタにゼロ電位を加え
た時、コレクタとベースの接合１９は逆バイアス
され、ある電圧で逆バイアスされている時、ベー
スに信号電流を流すと、コレクタに電流が流れコ
レクタ損失が発生し、熱が発生する。この熱によ
り第１図の説明と同様にアモルフアス磁性体が磁
化され、転写によにり記録媒体に記録される。第
１図、第２図のように半導体発熱部を多チヤンネ
ル化して個々に制御することもできる。 The operating mechanism is the substrate 1 which is the collector.
When a positive potential is applied to the emitter and a zero potential is applied to the emitter, the collector-base junction 19 is reverse biased, and when reverse biased at a certain voltage, when a signal current flows through the base, a current flows through the collector. Collector losses occur and heat is generated. The amorphous magnetic material is magnetized by this heat in the same manner as described in FIG. 1, and is recorded on the recording medium by transfer. As shown in FIGS. 1 and 2, the semiconductor heat generating section can be multi-channeled and individually controlled.
第３図は、第１図、第２図で示される部品を記
録ヘツドに構成した図を示す。２０は基板であ
り、２１はヘツド端のアモルフアス磁性層を示
す。２２は基板２０の電極であり、もう一方の電
極は基板２０の裏面に設けられている。２３は磁
界発生用コイル、２４は冷却フイン等の冷却器で
ある。そして両電極間には信号電流がパルスの形
で流される。そしてコイル２３には、両電極間に
流される信号に同期してON−OFFして、アモル
フアス磁性層２１に信号が書込まれる。冷却器２
４は基板２０の温度が上昇しないように基板２０
に取付けられる。特に冷却器４を持つことはアモ
ルフアス磁性体が迅速に冷却をするために必要な
構造である。 FIG. 3 shows a recording head constructed of the parts shown in FIGS. 1 and 2. FIG. 20 is a substrate, and 21 is an amorphous magnetic layer at the end of the head. 22 is an electrode of the substrate 20, and the other electrode is provided on the back surface of the substrate 20. 23 is a magnetic field generating coil, and 24 is a cooler such as a cooling fin. A signal current is then passed in the form of a pulse between both electrodes. The coil 23 is turned on and off in synchronization with the signal sent between both electrodes, and a signal is written into the amorphous magnetic layer 21. Cooler 2
4 is the substrate 20 to prevent the temperature of the substrate 20 from rising.
mounted on. In particular, having the cooler 4 is a necessary structure for rapidly cooling the amorphous magnetic material.
第４図は、アモルフアス磁性体の一般的な特性
について示したものであり、横軸は温度を示し、
縦軸は抗磁力Hc（Oe）と残留磁束密度Ms
（Gauss）を示している。希土類と遷移金属を適
当な比に混合し非晶質な膜を作ると補償点と呼ば
れる温度によつて残留磁束密度零の特性を持つＡ
に示すような温度−磁束特性を持たせることがで
きる。 Figure 4 shows the general characteristics of amorphous magnetic materials, where the horizontal axis shows temperature;
The vertical axis is the coercive force Hc (Oe) and the residual magnetic flux density Ms
(Gauss). When an amorphous film is made by mixing rare earths and transition metals in an appropriate ratio, A has a characteristic of zero residual magnetic flux density at a temperature called the compensation point.
It is possible to provide a temperature-magnetic flux characteristic as shown in FIG.
抗磁力Hcは異方性エネルギーＫと残留磁束密
度Msとの関係式Hc＝Ｋ／ＭｓからＫが一定であるか
らMsが小さくなると、Hcが増加する特性を持
ち、それをＢとして示す。 The coercive force Hc has a characteristic that Hc increases as Ms decreases because K is constant from the relational expression Hc=K/Ms between the anisotropic energy K and the residual magnetic flux density Ms, and this is shown as B.
第５図は、Tb−Fe系のある条件での特性で補
償点以上の温度での抗磁力Hcの特性を示す。こ
の材料でのキユリー温度は75℃附近でHcは零に
なる。補償点は10℃附近で900（Oe）程度にもな
る。これらの特性は材料の構成比、製造条件を変
えることによつて変えることができる。第５図に
示すような特性では、70℃附近まで温度を上げる
と、Hcは数十（Oe）まで下がり、この附近で磁
化し冷却すると、20℃附近では800（Oe）程度に
なる。低いHcの時は同じか少し大きな磁界で磁
化することができる。 FIG. 5 shows the characteristics of the coercive force Hc at a temperature above the compensation point under certain conditions of the Tb-Fe system. The Curie temperature of this material is around 75℃, and Hc becomes zero. The compensation point is around 900 (Oe) around 10℃. These characteristics can be changed by changing the composition ratio of materials and manufacturing conditions. With the characteristics shown in Figure 5, when the temperature is raised to around 70°C, Hc drops to several tens (Oe), and when it is magnetized and cooled around this temperature, it becomes around 800 (Oe) at around 20°C. When Hc is low, it can be magnetized with the same or slightly larger magnetic field.
以上のような構成からなる本発明の磁気記録ヘ
ツドによれば、微少な領域への書込み、また多チ
ヤンネルが容易にできる等、その産業性には大な
るものがある。 The magnetic recording head of the present invention having the above-described structure has great industrial properties, such as being able to easily write in a minute area and easily perform multi-channel recording.
第１図イは本発明による磁気記録ヘツドの一実
施例の要部の平面図、第１図ロは同正面図、第２
図イは他の実施例の要部の平面図、第２図ロは同
正面図、第３図は本発明による磁気記録ヘツドの
さらに他の実施例の斜視図、第４図、第５図はア
モルフアス磁性体の温度に対する磁気特性図であ
る。
１，１０，２０……半導体基板、８，１９……
PN接合部、５，１６……絶縁物、６，１７，２
１……非晶質磁性薄膜（アモルフアス磁性層）、
２３……磁界発生用コイル、２４……冷却器。
FIG. 1A is a plan view of essential parts of an embodiment of the magnetic recording head according to the present invention, FIG. 1B is a front view of the same, and FIG.
Figure A is a plan view of the main part of another embodiment, Figure 2B is a front view of the same, Figure 3 is a perspective view of still another embodiment of the magnetic recording head according to the present invention, and Figures 4 and 5. is a diagram of the magnetic characteristics of an amorphous magnetic material as a function of temperature. 1, 10, 20...semiconductor substrate, 8, 19...
PN junction, 5, 16... Insulator, 6, 17, 2
1...Amorphous magnetic thin film (amorphous magnetic layer),
23... Coil for magnetic field generation, 24... Cooler.
Claims (1)
る接合部を有する半導体発熱部と、その半導体発
熱部に絶縁物を介して設けられた非晶質磁性薄膜
と、前記半導体発熱部と非晶質磁性薄膜とを包含
するように巻回された磁界発生用コイルとからな
ることを特徴とする磁気記録ヘツド。 ２ 冷却器を備えていることを特徴とする特許請
求の範囲第１項に記載の磁気記録ヘツド。 ３ 半導体発熱部が複数個の独立に制御可能な半
導体発熱部からなることを特徴とする特許請求の
範囲第１項に記載の磁気記録ヘツド。[Scope of Claims] 1. A semiconductor heat generating part having a junction that generates heat by injecting a carrier, an amorphous magnetic thin film provided on the semiconductor heat generating part via an insulator, and the semiconductor A magnetic recording head comprising a magnetic field generating coil wound to include a heat generating part and an amorphous magnetic thin film. 2. The magnetic recording head according to claim 1, further comprising a cooler. 3. The magnetic recording head according to claim 1, wherein the semiconductor heat generating section is comprised of a plurality of independently controllable semiconductor heat generating sections.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5529778A JPS54146620A (en) | 1978-05-09 | 1978-05-09 | Magnetic record head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5529778A JPS54146620A (en) | 1978-05-09 | 1978-05-09 | Magnetic record head |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS54146620A JPS54146620A (en) | 1979-11-16 |
| JPS6221166B2 true JPS6221166B2 (en) | 1987-05-11 |
Family
ID=12994628
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5529778A Granted JPS54146620A (en) | 1978-05-09 | 1978-05-09 | Magnetic record head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54146620A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2588406B1 (en) * | 1985-10-04 | 1994-03-25 | Thomson Csf | THERMOMAGNETIC RECORDING HEAD AND METHOD FOR PRODUCING THE SAME |
| FR2630852B1 (en) * | 1988-04-27 | 1994-06-17 | Thomson Csf | THERMOMAGNETIC RECORDING HEAD |
-
1978
- 1978-05-09 JP JP5529778A patent/JPS54146620A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS54146620A (en) | 1979-11-16 |
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