JPS6221162A - Electrophotographic sensitive body - Google Patents

Abstract

PURPOSE:To obtain an electrophotographic sensitive body having excellent electrostatic charging property by forming an electric charge generating layer and charge transfer layer of microcrystalline silicon and incorporating one kind of the element selected from carbon, nitrogen and oxygen into the charge transfer layer. CONSTITUTION:The charge transfer layer 23 is formed on a conductive substrate 21 made of aluminum and the charge generating layer 24 and further a surface layer 25 are formed thereon. The charge transfer layer has 3-80mum layer thickness and is formed of muC-Si contg. at least one kind of the element selected from C, O and N. The charge generating layer has 1-10mum layer thickness and is formed of muC-Si. The electrostatic charge holding function is indirectly improved if C, O and N are incorporated into the charge transfer layer 23.

Description

DETAILED DESCRIPTION OF THE INVENTION Technical Field 1 of the Invention The present invention relates to an electrophotographic photoreceptor having excellent charging characteristics, photosensitivity characteristics, environmental resistance, etc.

[Technical background of the invention and its problems] Conventionally, as materials for forming the photoconductive layer of an electrophotographic photoreceptor, inorganic materials such as CdS, ZnO, Se, 5e-Te, or amorphous silicon, or poly-N-vinylcarbazole have been used. (PVCz) or trinitrofluorene (T
Organic materials such as NF) are used. however,
These conventional photoconductive materials have various problems in terms of photoconductive properties or manufacturing, and these materials are used depending on the purpose of use, sacrificing the properties of the photoreceptor system to some extent.

For example, Se and CdS are materials that are harmful to the human body, and special consideration must be given to safety measures when manufacturing them. Therefore, there are problems in that the production cost is high because the production equipment is complicated, and in particular, Se needs to be recovered, which adds to the recovery cost. Also,
In the Se or 5e-Te system, the crystallization temperature is 65°C
Therefore, during repeated copying, problems with the photoconductive properties arise due to residual snow, etc., and therefore, the service life is short and practicality is low.

Furthermore, ZnO is susceptible to oxidation-reduction and is significantly affected by the environmental atmosphere, resulting in a problem of low reliability in use.

Furthermore, organic photoconductive materials such as pvcz and TNF are suspected carcinogens and present human health concerns, and organic materials have poor thermal stability and abrasion resistance. , has the disadvantage of short lifespan.

On the other hand, amorphous silicon (hereinafter abbreviated as a-3i)
has recently attracted attention as a photoconductive conversion material, and is being actively applied to solar cells, thin film transistors, and image sensors. As part of this application of a-8i, attempts have been made to use a-8i as a photoconductive material for electrophotographic photoreceptors, and photoreceptors using a-8i are collected because they are non-polluting materials. No processing required;
Compared to other materials, it has advantages such as high spectral sensitivity in the visible light region, high surface hardness, and excellent wear resistance and impact resistance.

This a-3i is being studied as a photoreceptor based on the Carlson method, but in this case, the photoreceptor characteristics are required to be high resistance and photosensitivity. Since it is difficult to achieve this with a photoreceptor, a layered structure in which a barrier layer is provided between the photoconductive layer and the conductive support and a surface charge retention layer is provided on the photoconductor 1rli is used to achieve this goal. It satisfies such requirements.

By the way, a-8i is usually formed by a glow discharge decomposition method using silane gas, but at this time, a-8i is
Hydrogen is incorporated into 8illQ, and the electrical and optical characteristics vary greatly due to the difference in the amount of hydrogen. That is, a-8i
As the amount of hydrogen entering Ill increases, the optical bandgap increases and the resistance of a-8i increases, but
As a result, the photosensitivity to long wavelength light decreases, making it difficult to use, for example, in a laser beam printer equipped with a semiconductor laser. Also, a −
When the hydrogen content in the 8i film is high, depending on the film forming conditions, those having bonding structures such as (SiH2)a and Si82 may occupy most of the area in the film. In this case, voids increase and silicon dangling bonds increase, resulting in deterioration of photoconductive properties and rendering the material unusable as an electrophotographic photoreceptor. Conversely, reducing the amount of hydrogen penetrating into a-3i reduces the optical bandgap and its resistance, but increases photosensitivity to long wavelength light. However, when the hydrogen content is low, there is less hydrogen to combine with and reduce silicon dangling bonds. For this reason, the mobility of the generated carriers is reduced, the life span is shortened, and the photoconductive properties are deteriorated, making it difficult to use as an electrophotographic photoreceptor.

As a technique to increase the sensitivity to long wavelength light, there is a method of mixing silane-based gas and germane GeH4 and performing glow discharge decomposition to produce a film with a narrow optical bandgap. and GeH4
Since the optimum substrate temperature is different between the two methods, the produced film has many structural defects and cannot obtain good photoconductive properties.

Furthermore, waste gas treatment is complicated because QeH4 waste gas becomes a toxic gas when oxidized. Therefore, such technology is not practical.

[Object of the Invention] The present invention was made in view of the above circumstances, and has excellent charging ability, low residual potential, high sensitivity over a wide wavelength range up to the near-infrared region, and It is an object of the present invention to provide an electrophotographic photoreceptor that has good adhesion to the substrate and excellent environmental resistance.

[Summary of the Invention] An electrophotographic photoreceptor according to the present invention includes an electrically conductive support, a charge transfer layer formed on the electrically conductive support, and a charge generation layer formed on the charge transfer layer. In the electrophotographic photoreceptor, the charge generation layer is made of microcrystalline silicon and has a layer thickness of 1 to 10 μm, and the charge transfer layer is made of at least one kind selected from carbon, nitrogen, and oxygen. It is characterized by being formed of microcrystalline silicon containing elements and having a layer thickness of 3 to 80 μm.

This invention was achieved by the inventors of the present invention, who have conducted various experimental studies in order to overcome the drawbacks of the prior art described above and to develop an electrophotographic photoreceptor that has both excellent photoconductive properties (electrophotographic properties) and environmental resistance. As a result, microcrystalline silicon (hereinafter referred to as μ
The present invention was completed based on the idea that this object could be achieved by using C-8i (abbreviated as C-8i) for at least a portion of an electrophotographic photoreceptor.

[Embodiments of the Invention] The present invention will be specifically described below. The feature of this invention is that μC-3i is used instead of the conventional a-3i. In other words, all or part of the photoconductive layer is made of microcrystalline silicon (μC-8i).
, a mixture of microcrystalline silicon and amorphous silicon (a-8i), or a laminate of microcrystalline silicon and amorphous silicon. Also,
In a functionally separated type electrophotographic photoreceptor, μC-8t is used for the charge generation layer.

μC-S + is a
-8i and polycrystalline silicon (polycrystalline silicon). That is, in the X-ray diffraction measurement, since a-3i is amorphous, only a halo appears and no diffraction pattern can be observed, but μC-3i
shows a crystal diffraction pattern in which 2θ is around 27 to 28.5°. Also, the dark resistance of polycrystalline silicon is 106Ω・α, while μC-8i is 1011
It has a dark resistance of more than Ω. This μC-8i is formed by an aggregation of microcrystals having a particle size of about a few ongeström or more.

A mixture of μC-8i and a-3i, the crystalline region of μC-81 is mixed in a-8i, and μC-8i and a
-8i exists in a similar volume ratio. Also,
The laminate of μC-8i and a-3i is mostly a-3
A layer consisting of i and a layer filled with μC-8i are laminated.

Similar to a-3i, a photoconductive layer containing μC-8i can be produced by depositing μC-8i on a conductive support using silane gas as a raw material using a high-frequency glow discharge decomposition method. can. In this case, if the temperature of the support is set higher than when forming a-3i, and the high-frequency power is set higher than when forming a-8i, μC
-8i becomes easier to form. Furthermore, by increasing the support temperature and high frequency power, the flow rate of source gas such as silane gas can be increased, and as a result, the film formation rate can be increased. Further, by using a raw material gas of SiH+ and a gas obtained by diluting a high-order silane gas such as 5i2Hs with hydrogen, μC-S + can be formed with higher efficiency.

FIG. 1 is a diagram showing an apparatus for manufacturing an electrophotographic photoreceptor according to the present invention. For example, the gas cylinders 1.2° and 3.4 contain SiH+ and B2Hs, respectively.

Source gases such as H2 and CH4 are contained. The gas in these gas cylinders 1, 2, 3, 4 is supplied to a mixer 8 via a valve 6 and piping 7 for adjusting the flow m. Each cylinder is equipped with a pressure gauge 5, and by monitoring the pressure gauge 5 and adjusting the valve 6, the flow rate and mixing ratio of each raw material gas supplied to the mixer 8 can be adjusted. can. The gases mixed in the mixer 8 are supplied to a reaction vessel 9. A rotating shaft 1o is attached to the bottom 11 of the reaction vessel 9 so as to be rotatable around the vertical direction, and a disk-shaped support 12 is attached to the upper end of this rotating shaft 10 with its surface perpendicular to the rotating shaft 10. It has been fixed. Inside the reaction vessel 9, a cylindrical II pole 13 is installed on the bottom 11 with its axial center aligned with the axial center of the rotating shaft 10.

A drum base 14 of a photoreceptor is placed on a support base 12 with its axial center aligned with the axial center of the rotating shaft 10, and a heater 15 for heating the drum base is arranged inside the drum base 14. It is set up. A high frequency power source 16 is connected between the electrode 13 and the drum base 14, so that a high frequency current is supplied between the electrode 13 and the drum base 14. The rotating shaft 10 is rotationally driven by a motor 18. The pressure inside the reaction vessel 9 is monitored by a pressure gauge 17, and the reaction vessel 9 is connected via a gate valve 18 to an appropriate exhaust means such as an air pump.

When manufacturing a photoreceptor using the apparatus configured as described above, after installing the drum base 14 in the reaction vessel 9, the gate valve 19 is opened to control the inside of the reaction vessel 9 at approximately 0.1 Torr. Evacuate to below pressure. Next, cylinder 1
．． From 2.3.4, the required reaction gases are mixed at a predetermined mixing ratio and introduced into the reaction vessel 9. In this case, reaction vessel 9
The gas flow rate introduced into the reaction vessel 9 is such that the pressure inside the reaction vessel 9 is 0.1.
Set it so that it is between 1 Torr and 1 Torr. Next, the motor 18
is activated to rotate the drum base 14, and the heater 15 heats the drum base 14 to a constant temperature, and the frequency power supply 16 supplies a high frequency N current between the electrode 13 and the drum base 14 to cool the gap between them. to form a glow discharge.

As a result, microcrystalline silicon (μC-8i) is deposited on the drum base 14. Note that N20. NH3, NO2, N2.0H4.

These elements can be contained in μC-8i by using C2H4,02 gas or the like.

In this way, the electrophotographic photoreceptor according to the present invention has a conventional a
Similar to those using -3i, it can be manufactured using closed system manufacturing equipment, so it is safe for the human body. Furthermore, this electrophotographic photoreceptor has excellent heat resistance, moisture resistance, and abrasion resistance, so it has the advantage of having a long lifespan with little deterioration even after repeated use over a long period of time. Furthermore, since a long-wavelength sensitizing gas such as GeH+ is not required, there is no need to provide waste gas equipment, and industrial productivity is extremely high.

It is preferable that μC-8i contains 0.1 to 30 at % of hydrogen. As a result, the dark resistance and bright resistance become harmonious, and the photoconductive properties are improved. μC-
The optical energy gap Ea of 8i is the optical energy gap Ea of a-8i (1,65 to 1.70 eV
) is small compared to In other words, the optical energy gap of μC-8i changes depending on the crystal grain size and crystallinity of the μC-8t microcrystal, and as the crystal grain size and crystallinity increase, the optical energy gap decreases. The optical energy gap approaches the 1.1 eV of crystalline silicon. By the way, the μC-8il and a-8i layers absorb light with a larger energy than this optical energy gap, and transmit light with a smaller energy. Therefore, a-8i absorbs only visible light energy, but μC-8i, which has a smaller optical energy gap than a-8i, can also absorb near-infrared light, which has a longer wavelength and lower energy than visible light. I can do it. Therefore, μC-8i has high photosensitivity over a wide wavelength range.

μC-8i having such characteristics is suitable as a photoreceptor material for a laser printer using a semiconductor laser as a light source. When this a-3i is used as a photoreceptor for a laser printer, the light wavelength of the semiconductor laser is 790 nm.
Since 3i is longer than the wavelength region in which the sensitivity is high, the sensitivity of the photoreceptor becomes insufficient, and therefore, it is necessary to apply a laser intensity to the photoreceptor that exceeds the ability of the semiconductor laser, which poses a practical problem. On the other hand, when a photoreceptor is formed using μc-si, its sensitivity range extends to the near-infrared region, so it is possible to obtain a photoreceptor for semiconductor laser printers with extremely excellent photosensitivity characteristics. .

In order to further improve the photoconductive properties of μC-8i, which has such excellent photosensitivity characteristics, it is preferable to incorporate hydrogen into μC-8i. For example, when doping hydrogen into the μC-8i layer by glow discharge decomposition method, S
silane-based raw material gas such as i H4 and Si2H6;
A carrier gas such as hydrogen may be introduced into the reaction vessel to cause glow discharge, or a mixed gas of silicon halides such as SiF4 and 5iC1+ and hydrogen gas may be used, or a silane-based gas may be used. The reaction may be carried out using a mixed gas of silicon halide and silicon halide. Furthermore, μC can be reduced not only by glow discharge decomposition but also by physical methods such as sputtering.
-8i layer can be formed. In view of photoconductive properties, the photoconductive layer containing μC-8i preferably has a thickness of 1 to 80 μm, and more preferably 5 to 50 μm.

Substantially the entire region of the photoconductive layer may be formed of μC-8i, or may be formed of a mixture or a laminate of a-8i and μC-8i. The charging ability is higher in the laminate, and the photosensitivity is higher in the long wavelength region of the infrared region, although it depends on the volume ratio, in the mixture, and in the visible light region, the two are almost the same.

Therefore, depending on the use of the photoreceptor, substantially all the regions may be made of μC-8i, or may be made of a mixture or a laminate.

Preferably, μC-8i is doped with at least one element selected from nitrogen (N), carbon (C), and oxygen (0). Thereby, the dark resistance of μC-8i can be increased and the photoconductive properties can be improved.

These elements precipitate at the grain boundaries of μC-8i and act as terminators for silicon dangling bonds,
Reduce the density of states existing in the forbidden v1 band between bands,
It is thought that this increases the dark resistance.

Preferably, a ll5 wall layer is disposed between the conductive support and the photoconductive layer. This barrier layer comprises a conductive support and
By suppressing the flow of charge between the photoconductive layer and the photoconductive layer, the charge retention function on the surface of the photoconductive member is enhanced, and the charging ability of the photoconductive member is enhanced.

In the Carlson method, when the surface of the photoreceptor is positively charged, the barrier layer is made p-type in order to prevent electrons from being injected from the support side to the photoconductive layer. On the other hand, when the photoreceptor surface is negatively charged, a barrier layer is formed to prevent holes from being injected from the support side to the photoconductive layer.
Make it into a mold. It is also possible to form an insulating film on the support as a barrier layer. The barrier layer may be formed using μC-8i, or may be formed using a-8i.

In order to make μC-8t and a-8i p-type, it is preferable to dope them with elements belonging to Group Ⅰ of the periodic table, such as boron B, aluminum AI, gallium Ga, indium In1, and thallium T1. , μC-8i
In order to make the layer n-type, elements belonging to group V of the periodic table, such as nitrogen N, phosphorus P, arsenic AS, antimony 5
It is preferable to dope with b1-, bismuth 3i, or the like.

This n-type impurity or doping with n-type impurities prevents charges from moving from the support side to the photoconductive N layer.

Preferably, a surface layer is provided on top of the photoconductive layer.

Since μC-8i of Guide II has a relatively large refractive index of 3 to 4, light reflection easily occurs on the surface. When such light reflection occurs, the proportion of the amount of light absorbed by the photoconductive layer decreases, increasing optical loss. For this reason, it is preferable to provide a surface layer to prevent reflection. Also, by providing the surface layer, the photoconductive layer is protected from damage. Furthermore, by forming a surface layer, charging ability is improved,
The surface becomes more charged. Materials forming the surface layer include Si3N4, SiO2, and SiC.

Al103, a-8iN:H, a-8iO:)-1,
and a-8iC:H, and leading materials such as polyvinyl chloride and polyamide.

As a photoconductive member applied to an electrophotographic photoreceptor, as described above, a barrier layer is formed on a support, and this formation! ! It is not limited to the case where a photoconductive layer is formed on the support and the surface layer is formed on the photoconductive layer.
), and charge generation II (CGL) is formed on the charge transfer layer.
It can also be constructed in a functionally separated form.

In this case, a wall layer may be provided between the charge transport layer and the support. The charge generation layer generates carriers upon irradiation with light. This charge generation layer is partially or entirely made of microcrystalline silicon μC-8T,
The thickness is preferably 1 to 10 μm. The charge transfer layer is a layer that allows carriers generated in the charge generation layer to reach the support side with high efficiency, and therefore, the carriers need to have a long life, high mobility, and high transportability. The charge transport layer can be formed of μC-8i. In order to increase the dark resistance and improve the band N capability, it is preferable to light-dope an element belonging to either Group Ⅰ or Group V of the periodic table. Furthermore, in order to further improve the charging ability and to have the functions of both a charge transfer layer and a charge generation layer, one or more of the elements C, N, and O may be contained.

If the charge transport layer is too thin or too thick, it will not function satisfactorily. Therefore, the thickness of the charge transport layer is preferably 3 to 80 μm.

By providing a barrier layer, even in a functionally separated type photoreceptor having a charge transfer layer and a charge generation layer, its charge retention function and charging ability can be improved. In addition,
Whether the barrier layer is p-type or n-type is determined depending on its charging characteristics. This barrier layer may be formed of a-8i or μC-S+.

The invention according to this application is characterized by a charge transport layer.

The charge generation layer has a layer thickness of 3 to 80 μm and is formed of μC-8i containing at least one element selected from C0○ and N.
μm and is made of μC-8i. 2 and 3 are cross-sectional views of an electrophotographic photosensitive member embodying the present invention. In FIG. 2, a charge transfer layer 23 is formed on an aluminum conductive support 21, and a charge transfer layer 23 is formed on an aluminum conductive support 21. A charge generation layer 24 is formed on the movement 1!23. On the other hand, in FIG. 3, a surface layer 25 is further formed on the charge generation layer 24. The charge generation layer 24 is
At least a portion thereof is made of μC-8i, and the charge transfer layer 23 is made of μC-8i.

Since the charge generation 1i 124 is mainly formed of μC-8i, μC-S + has high light absorption in the infrared region, and therefore the photoreceptor can be moved from the visible light region to the near-infrared region (e.g. , 790n, which is the oscillation wavelength of the semiconductor laser
Sensitivity can be increased up to (near m). In other words, μ
C-8i has an optical energy gap Ea of a-8
i optical energy gap 1.65 to 1.70 eV
Since it is smaller than , it has the effect of absorbing near-infrared light and generating electric charge. Therefore, by using μC-8i in the charge generation layer, this photoreceptor can be used in both PPC (plain paper copying machines) and laser printers using semiconductor lasers.

μC-8i itself is somewhat n-type, but the charge generation @24 mainly made of μC-8i is lightly doped with elements belonging to Group Ⅰ of the periodic table (10-7 to 10-3 atomic %). By doing this, a charge is generated! 124 becomes an i-type (intrinsic) semiconductor, has a high dark resistance, and improves the S/N ratio and charging ability.

Furthermore, by incorporating at least one element among C, O, and N into the charge generation layer 24 to an extent that does not reduce photoconductivity, charging ability (charge retention ability) can be further enhanced. The charge generation layer 24 has a thickness of 1 to 10 μm. When the thickness of the charge generation layer exceeds 10 μm, a long time is required for film formation, and the layer is likely to peel off. on the other hand,
When the thickness of the charge generation layer 24 is less than 1 μm, carrier generation efficiency is low. For the above reasons, the thickness of the charge generation layer 24 is set to 1 to 10 μm, and more preferably 4 to 8 μm.

The charge transfer layer 23 is a layer provided to transfer charges generated in the charge generation layer 24 to the support 21 with high efficiency, and is formed of μc-s 1.

By lightly doping this charge transfer layer 23 with an element belonging to Group 1 of the periodic table, its dark resistance can be increased and the charge retention function can be indirectly enhanced. In addition, the charge transfer layer 23 includes C, O,
N may be included.

By doping μC-S + with C,0,N, the sensitivity to visible light can be increased by 10%.
The same effect as a-8i can be expected by adding . Ideally, the charge transfer layer does not have traps (density of states) that trap carriers. For this reason, in order to remove silicon dangling bonds that become traps, it is preferable to include a trace amount of C, O, and N in the charge transfer 171!23. The amount of C, O, and N is preferably 20 atomic % or less in consideration of carrier mobility. The layer thickness of the charge transport layer is 3 to 80 μm. In order to maintain high chargeability of the charge transfer layer, it is necessary to increase the layer thickness, but if the charge transfer layer is too thick,
It becomes difficult for the carrier to travel and it becomes difficult for the carrier to reach the support. For these reasons, the layer thickness of the charge transfer layer 23 is 3 to 80 μm, preferably 1 μm.
The thickness is 0 to 50 μm, more preferably 15 to 30 μm.

As shown in FIG. 3, a surface layer 2 is placed on the charge generation layer 24.
5, this surface 824
is a-3i (a-8iC:HSa-8iO:HS
a-8iN:H, a-8iCN:H, etc.). This protects the surface of the photoconductive layer and improves environmental resistance and charging ability. The content of C, O, and N is 1
Preferably, it is 0 to 50 atomic %.

Next, embodiments of the invention will be described.

! An A1 drum (diameter 80 mm, length 350 mm) serving as a conductive substrate was degreased with trichlorene, washed and dried, and then loaded into a reaction vessel. The surface of this drum is subjected to acid treatment, alkali treatment, or sandblasting treatment as necessary to prevent interference. Inside the reaction vessel,
The chamber is evacuated to a degree of vacuum of about 10' using a diffusion pump (not shown). Thereafter, the drum base is heated and maintained at about 300°C. Then, SiH+ gas at a flow rate of 5008 CCM, 82 H6 gas with a flow ratio of 10-6 to this SiH+ gas flow rate, CH4 gas at 11005 CCM, and 70
0 SCCM of H2 gas was mixed and fed to the reaction vessel.

Thereafter, the inside of the reaction vessel was evacuated using a mechanical booster pump and a rotary pump, and the pressure was adjusted to 1 Torr. A high frequency power of 1.5 KW at 13.56 MHz was applied to the electrode, and SiH+,
A charge transport layer 2 which is a μC-3i layer containing carbon is formed on a support 21 by generating a plasma of H2, 82H6 and CH4.
3 was formed to have a thickness of 20 μm.

After that, S i H4 gas (1) flow fi1200scc
M.

B2 H6 flow rate for SiH4 is 10-7, H2
These gases were introduced into the reaction vessel with the gas flow rate set at 28 LM. 2KW at reaction pressure of 1.2 Torr
A film was formed by applying 100 µm of electric power, and a charge of 10 μm was generated! ! (μ
C-8i layer) 24 was formed. Subsequently, a-8i containing C, O, and N was formed into a film by the same operation to form a surface layer. The photoreceptor film formed in this way was heated to 790 nm.
When an image was formed using a laser printer equipped with a semiconductor laser with an oscillation wavelength of Ta. Furthermore, when the reproducibility and stability of the transfer process were investigated by repeated copying, it was demonstrated that the transferred images were extremely good and had excellent corona resistance, moisture resistance, abrasion resistance, etc.

[Effects of the Invention] According to the present invention, a photoconductive material which has high resistance, excellent charging characteristics, high photosensitivity in the visible light and near-infrared light regions, is easy to manufacture, and has high practicality. A sexual member can be obtained.

[Brief explanation of the drawing]

FIG. 1 is a diagram showing an apparatus for manufacturing a photoconductive member according to the present invention, and FIGS. 2 and 3 are sectional views showing a photoconductive member according to an embodiment of the present invention. 1.2, 3.4: Cylinder, 5: Pressure gauge, 6: Valve, 7
: Piping, 8; Mixer, 9; Reaction container, 10; Rotating shaft, 1
3; if pole, 14; drum base, 15: heater, 16
; High frequency power supply, 19: Gate valve, 21; Support body, 2
3; Charge transfer layer, 24; Charge generation layer, 25; Surface layer Applicant's representative Patent attorney Takehiko Suzue d Figure 1

Claims (7)

[Claims] (1) In an electrophotographic photoreceptor having a conductive support, a charge transfer layer formed on the conductive support, and a charge generation layer formed on the charge transfer layer, the charge The generation layer is made of microcrystalline silicon and has a layer thickness of 1 to 10 μm, and the charge transfer layer is made of microcrystalline silicon containing at least one element selected from carbon, nitrogen, and oxygen. An electrophotographic photoreceptor characterized by having a layer thickness of 80 μm. (2) The electrophotographic photoreceptor according to claim 1, wherein the charge generation layer contains hydrogen. (3) The charge generation layer belongs to Group III or V of the periodic table.
The electrophotographic photoreceptor according to claim 1 or 2, characterized in that the electrophotographic photoreceptor contains at least one element selected from the elements belonging to the group A. (4) The electrophotographic photoreceptor according to claim 1, wherein the charge transfer layer contains hydrogen. (5) The charge transfer layer belongs to Group III or V of the periodic table.
The electrophotographic photoreceptor according to claim 1 or 4, characterized in that the electrophotographic photoreceptor contains at least one element selected from the elements belonging to the group A. (6) Any one of claims 1, 4, and 5, wherein the charge transfer layer contains at least one element selected from carbon, nitrogen, and oxygen. The electrophotographic photoreceptor described in . (7) The electrophotographic photoreceptor according to claim 1, wherein a surface layer is formed on the charge generation layer.