JPS62209854A - Contact type image sensor - Google Patents
Contact type image sensorInfo
- Publication number
- JPS62209854A JPS62209854A JP61053019A JP5301986A JPS62209854A JP S62209854 A JPS62209854 A JP S62209854A JP 61053019 A JP61053019 A JP 61053019A JP 5301986 A JP5301986 A JP 5301986A JP S62209854 A JPS62209854 A JP S62209854A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- light
- transparent
- shielding layer
- image sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010410 layer Substances 0.000 claims abstract description 50
- 239000011241 protective layer Substances 0.000 claims abstract description 14
- 238000006243 chemical reaction Methods 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 8
- 230000001050 lubricating effect Effects 0.000 claims abstract description 5
- 239000010409 thin film Substances 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- 230000001681 protective effect Effects 0.000 abstract description 4
- 238000004544 sputter deposition Methods 0.000 abstract description 4
- 239000000356 contaminant Substances 0.000 abstract description 3
- 239000010419 fine particle Substances 0.000 abstract description 3
- 238000010030 laminating Methods 0.000 abstract description 2
- 230000005540 biological transmission Effects 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 230000003287 optical effect Effects 0.000 abstract 3
- 238000012216 screening Methods 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 abstract 1
- 229910052731 fluorine Inorganic materials 0.000 abstract 1
- 239000011737 fluorine Substances 0.000 abstract 1
- 238000005461 lubrication Methods 0.000 abstract 1
- 239000011347 resin Substances 0.000 abstract 1
- 229920005989 resin Polymers 0.000 abstract 1
- 239000010408 film Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Facsimile Heads (AREA)
Abstract
Description
本発明は、ファクシミリ等の読み取り系に用いる、原稿
に密着して読み取りを行うことが可能な密着形イメージ
センサに関するものである。The present invention relates to a contact type image sensor that is used in a reading system such as a facsimile machine and is capable of reading a document in close contact with the document.
ファクシミリ等の読み取り方法として、投影レンズを用
いずに直接光電変換素子上に像を導く密着形イメージセ
ンサが提案されている。第２図は特開昭５６−２７５６
２号公報において示されたイメージセンサの断面図であ
る０図において、ガラス等の透明基板１上に絶縁性遮光
層２と光を透過する透明電極３とが基板のほぼ中央にお
いて互いに接して配列され、遮光層２上に光電変換素子
４の列が形成され、その光電変換素子４の一方の側に透
明電極３が、他方の側に不透明電極５が形成される。こ
れらの上面を透明保護層６が覆い、その上部に原稿９の
照明領域を制限するための透明窓８を開けた遮光Ｎ７を
設ける。斜め下方よりの照明光束１０は透明窓８のみを
通過し、原稿９を照明するため反射光のひろがりが抑え
られ、分解能が向上する利点がある。ここで透明保護層
６は原稿との接触摩擦による光電変換素子および電極の
損傷や塵埃等の汚染物の付着による光電変換素子の特性
低下を防止するため設けられたものであり、きすを受け
に（い強固な表面を有するとともに、表面が平滑で均一
な面をなし、汚染物が付着し難くかつ除去しやすいこと
が必要である。当然のことながら、保護層表面の汚れは
原稿の読み取りエラーの原因となる。しかしながらこの
従来例においては、透明保護層６の上部にさらに遮光層
７を積層し、透明窓８を設けているため、遮光層表面に
汚れが付着しやすく、また除去し難い場合には遮光層表
面に付着した汚れは透明窓を覆うことがある。また遮光
層表面に原稿９との摩擦によりきすが生じた場合は、光
がもれることにより読み取りエラーが発生しやすくなる
。2. Description of the Related Art A contact image sensor that directs an image onto a photoelectric conversion element without using a projection lens has been proposed as a reading method for facsimiles and the like. Figure 2 is from Japanese Patent Application Publication No. 56-2756.
In Figure 0, which is a cross-sectional view of the image sensor shown in Publication No. 2, an insulating light-shielding layer 2 and a transparent electrode 3 that transmits light are arranged on a transparent substrate 1 such as glass so as to be in contact with each other approximately at the center of the substrate. A row of photoelectric conversion elements 4 is formed on the light shielding layer 2, and a transparent electrode 3 is formed on one side of the photoelectric conversion element 4, and an opaque electrode 5 is formed on the other side. A transparent protective layer 6 covers the upper surfaces of these layers, and a light shielding layer N7 having a transparent window 8 for restricting the illumination area of the original 9 is provided above the transparent protective layer 6. The illumination light beam 10 from diagonally below passes only through the transparent window 8 and illuminates the original 9, which has the advantage of suppressing the spread of reflected light and improving resolution. The transparent protective layer 6 is provided to prevent damage to the photoelectric conversion element and electrodes due to contact friction with the original, and to prevent deterioration in the characteristics of the photoelectric conversion element due to the adhesion of contaminants such as dust. (In addition to having a strong surface, the surface must also be smooth and uniform, making it difficult for contaminants to adhere to it and making it easy to remove.Of course, contamination on the surface of the protective layer can cause errors in reading the original.) However, in this conventional example, a light shielding layer 7 is further laminated on top of the transparent protective layer 6 and a transparent window 8 is provided, so dirt easily adheres to the surface of the light shielding layer and is difficult to remove. In some cases, dirt adhering to the surface of the light-shielding layer may cover the transparent window.Furthermore, if scratches occur on the surface of the light-shielding layer due to friction with the document 9, reading errors are likely to occur due to light leakage. .
本発明は、遮光層および透明窓を覆って硬度の高い透光
層を介して潤滑性を有する透光層を積層するものである
。硬度の高い遮光層としては窒化けい素あるいは酸化け
い素の薄膜など、潤滑性を有する透光層としてはふっ素
樹脂薄膜などが用いられ、被膜強度を有し、かつ表面潤
滑性を有する保護層が表面に形成されるので、原稿との
接触がなめらかになり、また硬度の高い層の変形抵抗に
よってきすがつき難くなって上述の目的が達成される。In the present invention, a light-transmitting layer having lubricity is laminated to cover a light-shielding layer and a transparent window via a highly hard light-transmitting layer. A thin film of silicon nitride or silicon oxide is used as a light-shielding layer with high hardness, a thin film of fluororesin is used as a light-transmitting layer with lubricity, and a protective layer with film strength and surface lubricity is used. Since it is formed on the surface, the contact with the document is smooth, and the deformation resistance of the hard layer makes it difficult to scratch, thereby achieving the above-mentioned purpose.
以下、第２図を含めて共通の部分に同一の符号を付した
図を引用して本発明の実施例を従来例と比較して説明す
る。第１図に示す実施例においては、第１図（ａｌに示
すように透明基板ｌの上に遮光７１２および光電変換素
子４を形成したのち、光電変換素子に透明電極３および
不透明電極５を接続する０次いでスパッタリングにより
Ｓｔｏｗを膜厚４−に被覆し、透明保護層６とする。さ
らに、透明窓の大きさのレジスト・パターン１１を被着
し、このレジストをマスクとしてプラズマ・エツチング
により５ｉ（ｈｌｉｉ６を深さ０． ｉ ｎエツチング
して透明窓８を形成する。このあと、レジスト・マスク
１１を残したまま電子ビーム蒸着によりＣｒ層を膜厚０
、 ｉ ｎに被着し、遮光層７を形成する。レジスト１
１を除去したのち、第１図山）に示すように透明窓８お
よび遮光層７の上に２−の厚さの５ｉｆｔ層１２を被覆
し、さらにふっ素樹脂微粒子の分散液（例えばダイキン
工業製Ｌｌｌ−１）を塗布後加熱処理して０．１−の厚
さの潤滑性被膜１３を積層し、表面が透光性保護膜で覆
われた密着形イメージセンサを得た。
第３図に示す実施例においては、第３図（ａｌに示すよ
うに透明基板ｌの上に遮光層２．光電変換素子４．透明
電極３および不透明電極５を形成したのち、プラズマＣ
ＶＤ法により窒化けい素層を４μの厚さに被覆して透明
保護層６とする。さらに、マスクにより透明窓を形成す
る部分を覆ってスパッタリングすることによってＣｒ層
からなる膜厚０．１μの遮光層７を設ける。このあと第
３開山）に示すようにプラズマＣＶＤ法により２ｐの厚
さの窒化けい素層１４を被着し、透明窓８の部分も埋め
、次いでふっ素樹脂微粒子の分散液を塗布して加熱処理
し、０．１ｎ厚さの潤滑性被膜１３を積層して表面が透
光性保護膜で覆われた密着形イメージセンナを得た。
比較のため、第１図（司の場合と同様に透明基板１の上
に遮光層２．光電変換素子４．透明電極３および不透明
電極５を形成したのち、スパッタリングで被覆した４＃
１１の厚さの５ｉｆｔ透明保護層６の上面をレジスト・
パターン１１をマスクとして０．１−の深さにエツチン
グして透明窓８を形成し、さらに０．１４の厚さのＣｒ
層７を被着して第２図について述べたような従来例の密
着形イメージセンサを作成した。
以上の二つの実施例および比較例の密着形イメージセン
サをファクシミリに組み込み、Ａ４判原稿の送信動作を
１万回繰り返す試験を実施し、試験終了後センサ表面の
外観検査を行った。二つの実施例のセンサの外観は、い
ずれも表面の保ｆｌｌＪＩ１３にきずの発生が認められ
ず、また汚れの付着・がなかった、一方、比較例のセン
サの外観においては、Ｃｒ遮光層７の表面にこすりきす
が発生し、また透明窓８と遮光層７の境界部分に汚れの
付着が認められた。Hereinafter, embodiments of the present invention will be described in comparison with the conventional example with reference to drawings including FIG. 2 in which common parts are given the same reference numerals. In the embodiment shown in FIG. 1, after forming a light shield 712 and a photoelectric conversion element 4 on a transparent substrate l as shown in FIG. Then, Stow is coated with a thickness of 4-4 by sputtering to form a transparent protective layer 6.Furthermore, a resist pattern 11 of the size of the transparent window is deposited, and using this resist as a mask, plasma etching is performed to form a 5-i film (5i). The transparent window 8 is formed by etching the hlii 6 to a depth of 0.in.After this, a Cr layer is deposited to a thickness of 0 by electron beam evaporation while leaving the resist mask 11.
, in to form a light shielding layer 7. resist 1
1, a 5-ift layer 12 with a thickness of 2- is coated on the transparent window 8 and the light-shielding layer 7 as shown in Figure 1), and a dispersion of fluororesin fine particles (for example, manufactured by Daikin Industries) After applying Lll-1), a lubricating film 13 of 0.1-thickness was laminated by heat treatment and a contact type image sensor whose surface was covered with a light-transmitting protective film was obtained. In the embodiment shown in FIG. 3, after forming a light shielding layer 2, a photoelectric conversion element 4, a transparent electrode 3, and an opaque electrode 5 on a transparent substrate l as shown in FIG.
A transparent protective layer 6 is formed by coating a silicon nitride layer to a thickness of 4 μm using the VD method. Furthermore, a light-shielding layer 7 made of a Cr layer having a thickness of 0.1 μm is provided by sputtering while covering the portion where the transparent window is to be formed using a mask. After this, as shown in the third opening), a silicon nitride layer 14 with a thickness of 2p is deposited by the plasma CVD method, the transparent window 8 is also filled, and then a dispersion of fluororesin fine particles is applied and heat treated. A contact type image sensor whose surface was covered with a light-transmitting protective film was obtained by laminating a lubricating film 13 with a thickness of 0.1 nm. For comparison, FIG. 1 (similar to Tsukasa's case, a light-shielding layer 2, a photoelectric conversion element 4, a transparent electrode 3, and an opaque electrode 5 were formed on a transparent substrate 1, and then a 4# coated layer was formed by sputtering.
The upper surface of the 5ift transparent protective layer 6 with a thickness of 11 is coated with a resist.
Using the pattern 11 as a mask, the transparent window 8 is formed by etching to a depth of 0.1-mm, and then a 0.14-thick Cr film is etched.
Layer 7 was deposited to create a conventional contact image sensor as described with respect to FIG. The contact image sensors of the above two examples and comparative example were incorporated into a facsimile machine, and a test was conducted in which the operation of transmitting an A4 size document was repeated 10,000 times. After the test, the appearance of the sensor surface was inspected. The external appearance of the sensors of the two examples showed that the surface of the protective film JI 13 did not show any scratches or dirt, while the external appearance of the sensor of the comparative example showed that the Cr light shielding layer 7 Scratches were observed on the surface, and dirt was observed at the boundary between the transparent window 8 and the light shielding layer 7.
本発明によれば、原稿への照明のための透明窓を開けた
遮光層の上に硬質の材料からなる層と、潤滑性良好な材
料からなる層からなる透光性保護層を被覆したため、透
明窓への汚れの付着あるいは原稿との接触摩擦による表
面きずの発生が防止されるので、長寿命の密着形イメー
ジセンサが得られる。According to the present invention, a light-transmitting protective layer consisting of a layer made of a hard material and a layer made of a material with good lubricity is coated on a light-shielding layer with a transparent window for illuminating the original. Since the adhesion of dirt to the transparent window or the occurrence of surface scratches due to contact friction with the original is prevented, a long-life contact type image sensor can be obtained.
第１図は本発明の一実施例の製造工程を順次示す断面図
、第２図は従来の密着形イメージセンサの使用状態を示
す断面図、第３図は本発明の別の実施例の製造工程を順
次示す断面図である。
１：透明基板、３：透明電橋、４：光電変換素子、５：
不透明電橋、６：透明保護層、７：遮光層、８：透明窓
、１２ ： ＳｉＯ，ｉｌ、１３：潤滑性被膜、第１図
第２図FIG. 1 is a sectional view sequentially showing the manufacturing process of one embodiment of the present invention, FIG. 2 is a sectional view showing the usage state of a conventional contact type image sensor, and FIG. 3 is a manufacturing process of another embodiment of the present invention. It is sectional drawing which shows a process one by one. 1: Transparent substrate, 3: Transparent electric bridge, 4: Photoelectric conversion element, 5:
Opaque electric bridge, 6: Transparent protective layer, 7: Light shielding layer, 8: Transparent window, 12: SiO, il, 13: Lubricious coating, Fig. 1 Fig. 2
Claims (1)
びそれに接続される電極を覆う透明保護層の上に設けら
れた遮光層中の透明窓を通して行われるものにおいて、
遮光層および透明窓を覆って硬度の高い遮光層を介して
潤滑性を有する透光層が積層されたことを特徴とする密
着形イメージセンサ。 ２）特許請求の範囲第１項記載のセンサにおいて、硬度
の高い遮光層が酸化けい素からなる薄膜であることを特
徴とする密着形イメージセンサ。 ３）特許請求の範囲第１項記載のセンサにおいて、硬度
の高い遮光層が窒化けい素からなる薄膜であることを特
徴とする密着形イメージセンサ。 ４）特許請求の範囲第１項または３項記載のセンサにお
いて、潤滑性を有する遮光層がふっ素樹脂からなる薄膜
であることを特徴とする密着形イメージセンサ。[Scope of Claims] 1) In a document in which light is irradiated onto the original through a transparent window in a light shielding layer provided on a transparent protective layer covering a photoelectric conversion element on a transparent substrate and an electrode connected thereto. ,
A contact image sensor characterized in that a light-transmitting layer having lubricating properties is laminated with a light-shielding layer having high hardness interposed therebetween, covering a light-shielding layer and a transparent window. 2) A contact type image sensor according to claim 1, wherein the highly hard light shielding layer is a thin film made of silicon oxide. 3) A contact type image sensor according to claim 1, wherein the highly hard light-shielding layer is a thin film made of silicon nitride. 4) A contact type image sensor according to claim 1 or 3, wherein the light-shielding layer having lubricating properties is a thin film made of fluororesin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61053019A JPS62209854A (en) | 1986-03-11 | 1986-03-11 | Contact type image sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61053019A JPS62209854A (en) | 1986-03-11 | 1986-03-11 | Contact type image sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62209854A true JPS62209854A (en) | 1987-09-16 |
Family
ID=12931187
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61053019A Pending JPS62209854A (en) | 1986-03-11 | 1986-03-11 | Contact type image sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62209854A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02112062U (en) * | 1989-02-22 | 1990-09-07 |
-
1986
- 1986-03-11 JP JP61053019A patent/JPS62209854A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02112062U (en) * | 1989-02-22 | 1990-09-07 |
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