JPS62209793A - Output circuit - Google Patents

Output circuit

Info

Publication number
JPS62209793A
JPS62209793A JP61054248A JP5424886A JPS62209793A JP S62209793 A JPS62209793 A JP S62209793A JP 61054248 A JP61054248 A JP 61054248A JP 5424886 A JP5424886 A JP 5424886A JP S62209793 A JPS62209793 A JP S62209793A
Authority
JP
Japan
Prior art keywords
delay
output
control signal
output circuit
circuits
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP61054248A
Other languages
Japanese (ja)
Inventor
Junji Kadota
門田 順治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP61054248A priority Critical patent/JPS62209793A/en
Publication of JPS62209793A publication Critical patent/JPS62209793A/en
Pending legal-status Critical Current

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  • Static Random-Access Memory (AREA)
  • Electronic Switches (AREA)

Abstract

PURPOSE:To prevent the erroneous recognition of input binary information without having an influence upon a supply voltage and an earth voltage by giving a control signal to individual output means through delay means different in delay time. CONSTITUTION:In the read mode, the control signal is supplied from a control circuit 8 to delay circuits 21 simultaneously, and circuits 21 send the delay control signal to corresponding input/output circuits 7 at intervals. Even if plural cell information are all '1' or '0', currents are not conducted simultaneously through pMOSFETs Q1 or nMOSFETs Q2 as the result, and erroneous discrimination of address signals Axi and Ayi, external control signals CS, OE, and WE, etc., is prevented.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は出力回路、例えばランダムアクセスメモリ装置
のように複数の出力二値情報を並列に出力する出力回路
に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an output circuit, such as a random access memory device, which outputs a plurality of output binary information in parallel.

〔従来の技術〕[Conventional technology]

従来この種の出力回路としては、例えば第2図に示すよ
うなものがある。図において、1は半導体基板を示して
おシ、該半導体基板1上に形成されたメモリセルアレイ
2のいずれかのメモリセルにアクセスするには、アドレ
ス端子aを介してアドレス信号Axiをアドレスバッフ
ァ3に供給して内部アドレス信号Axi’とAxi’と
を形成する。これらの内部アドレス信号Axi’とAx
i’とはXデコーダ4でデコードされワード線選択信号
xjとなる。
A conventional output circuit of this type includes one shown in FIG. 2, for example. In the figure, 1 indicates a semiconductor substrate, and in order to access any memory cell of a memory cell array 2 formed on the semiconductor substrate 1, an address signal Axi is sent to an address buffer 3 via an address terminal a. to form internal address signals Axi' and Axi'. These internal address signals Axi' and Ax
i' is decoded by the X decoder 4 and becomes a word line selection signal xj.

ワード線選択信号xjによシワード線が選択されると、
続いてアドレス端子すを介してアドレスバッファ5にア
ドレス信号Ayiが供給され、該アドレス信号Ay i
に基づき形成される内部アドレス信号Ayi’とAyi
’とがXデコーダ6に供給される。Xデコーダ6は内部
アドレス信号Ayi’とAyi’とに基づきスイッチト
ランジスタs、s’をオンさせ、アドレス信号Ax i
 、 Ay iで指定されるメモリセルに記憶されてい
るセル情報をデータバスDBi、DBiに出力させる。
When a word line is selected by the word line selection signal xj,
Subsequently, the address signal Ayi is supplied to the address buffer 5 via the address terminal, and the address signal Ay i
Internal address signals Ayi' and Ayi formed based on
' is supplied to the X decoder 6. The X decoder 6 turns on the switch transistors s and s' based on the internal address signals Ayi' and Ayi', and outputs the address signal Ax i
, Ay i outputs the cell information stored in the memory cell designated by i to the data buses DBi and DBi.

こうして読み出されたセル情報は各人出力回路7に並列
に供給され、コントロール回路8から各入出力回路7に
同時的に供給される制御信号によシ同時に外部に出力さ
れる。ここで、入出力回路7は第3図に示されているよ
うに相補型MOSトランジスタで構成されておシ、二値
情報rOJを出力するときは、pチャンネルMOSトラ
ンジスタQlを常時オフにしておき、nチャンネルMO
SトランジスタQ、は、出力制御信号に基づきオン、ま
たはオフし、二値情報「1」を出力するときはnチャン
ネルトランジスタQzをオフしたまま、pチャンネルM
OSトランジスタQlをオン、またはオフさせる。
The cell information thus read out is supplied in parallel to each individual's output circuit 7, and simultaneously outputted to the outside by control signals supplied from the control circuit 8 to each input/output circuit 7 at the same time. Here, the input/output circuit 7 is composed of complementary MOS transistors as shown in FIG. 3, and when outputting binary information rOJ, the p-channel MOS transistor Ql is always turned off. , n-channel MO
The S transistor Q is turned on or off based on the output control signal, and when outputting binary information "1", the p channel transistor Q is turned off while the n channel transistor Qz is turned off.
Turns on or off OS transistor Ql.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

上記従来例にあっては、各入出力回路7に制御信号が同
時的に供給され、容入出力回路7のpチャンネルMOS
トランジスタQ1、またはnチャンネルMO8)ランジ
スタQ!を同時にオンあるいはオフさせる。したがって
、出力させる二値情報が全て「0」または「1」のとき
は、pチャンネルMOSトランジスタQsまたはnチャ
ンネルMOSトランジスタQ、が−斉にオンする。その
ため、オンするトランジスタQ1’l:たはQ2によシ
ミ源Vssから外部の負荷回路へ、あるいは外部の負荷
回路から接地端子GNDに大電流が流れる。これら電源
Vssと接地端子GNDとの間には上記各回路を構成す
るMO8I−ランジスタの寄生容量(等測的に第2図中
rCJで表わす)が介在しているので、上記大電流によ
シミ源電圧の低下または接地電圧の上昇が生じると、接
地電圧または電源電圧も変動し、かかる電源電圧と接地
電圧との値に基づき、上記アドレス信号Ax i 、 
Ay iの値を判別するとき誤認が生じ易いという問題
点があった。
In the above conventional example, control signals are simultaneously supplied to each input/output circuit 7, and the p-channel MOS of the input/output circuit 7
Transistor Q1 or n-channel MO8) Transistor Q! on or off at the same time. Therefore, when the binary information to be output is all "0" or "1", the p-channel MOS transistor Qs or the n-channel MOS transistor Q are turned on simultaneously. Therefore, a large current flows from the stain source Vss to the external load circuit or from the external load circuit to the ground terminal GND due to the transistor Q1'l: or Q2 being turned on. Since the parasitic capacitance (isometrically represented by rCJ in FIG. 2) of the MO8I-transistor constituting each of the above circuits exists between the power supply Vss and the ground terminal GND, there is no risk of staining due to the large current. When the source voltage decreases or the ground voltage increases, the ground voltage or power supply voltage also fluctuates, and based on the values of the power supply voltage and the ground voltage, the address signal Ax i ,
There is a problem in that misidentification is likely to occur when determining the value of Ay i.

したがって、本発明は電源電圧および接地電圧に影響を
与えない出力回路を提供することを目的としている。
Therefore, it is an object of the present invention to provide an output circuit that does not affect the power supply voltage and ground voltage.

〔問題点を解決するだめの手段、作用および効果〕本発
明に係わる出力回路にあっては、複数出力手段に遅延時
間の異なる遅延手段をそれぞれ設け、該遅延手段を介し
て制御信号を各出力手段に送出するようにしたので、各
出力手段は同時的に出力二値情報を出力することがなく
なシ、順次間隔をおいて二値情報を出力する。したがっ
て、仮に、複数の出力二値情報が全て「1」、またはr
OJであっても、急激な大電流の影響で基準電位および
接地電位に変動を生じさせることがない。その結果、基
準電位と接地電位とに参照して入力二値情報を判別して
も誤認を生じる仁とがないという効果を得られる。
[Means, operations, and effects for solving the problem] In the output circuit according to the present invention, the plurality of output means are each provided with delay means having different delay times, and each control signal is outputted through the delay means. Since the information is sent to the output means, each output means does not output binary information at the same time, but sequentially outputs binary information at intervals. Therefore, if a plurality of output binary information are all "1" or r
Even with OJ, the reference potential and ground potential will not fluctuate due to the influence of a sudden large current. As a result, it is possible to obtain the effect that even when input binary information is discriminated with reference to the reference potential and the ground potential, there is no misidentification.

〔実施例〕〔Example〕

第1図は本発明をランダムアクセスメモリに適用した場
合を示す一実施例であシ、第1図中第2図の構成と同一
の構成には同一符号を付し説明を省略する。図中21は
入出力回路7に対応して設けられた遅延回路を示してお
シ、これらの遅延回路21は本発明の遅延手段を構成し
てもよいし、複数の遅延回路21で遅延手段を構成させ
るようにしてもよい。読み出しモード時には各遅延回路
21にコントロール回路8から制御信号が同時に供給さ
れ、谷遅延回路21は制御信号の印加後、それぞれ間隔
をおいて対応する入出力回路7に遅延制御信号を送出す
る。その結果、出力すべき複数のセル情報が全て「1」
または「0」であっても、pチャンネルMO8)ランジ
スタQ、またはnチャンネルMO8)ランジスタQ2を
介して電流が一斉に流れることがなく、電源電圧および
接地電圧に大きな電圧変動は生じない。その結果、アド
レス信号Ax i 、 Ay iや外部制御信号C8,
OE、WE等を誤って判別することがなくなる。
FIG. 1 shows an embodiment in which the present invention is applied to a random access memory, and the same components in FIG. 1 as those in FIG. 2 are denoted by the same reference numerals, and the explanation thereof will be omitted. In the figure, 21 indicates a delay circuit provided corresponding to the input/output circuit 7. These delay circuits 21 may constitute the delay means of the present invention, or a plurality of delay circuits 21 may constitute the delay means. may be configured. In the read mode, control signals are supplied from the control circuit 8 to each delay circuit 21 at the same time, and after application of the control signal, the valley delay circuits 21 send out delay control signals to the corresponding input/output circuits 7 at intervals. As a result, all the multiple cell information to be output are "1"
Or even if it is "0", the current does not flow all at once through the p-channel MO8) transistor Q or the n-channel MO8) transistor Q2, and no large voltage fluctuation occurs in the power supply voltage and the ground voltage. As a result, address signals Ax i , Ay i and external control signals C8,
This eliminates the possibility of erroneously determining OE, WE, etc.

力お、本発明はランダムアクセスメモリだけでなく、マ
イクロプロセッサ等の出力回路としても使用できる。
Furthermore, the present invention can be used not only as a random access memory but also as an output circuit for a microprocessor or the like.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の一実施例の構成を示すブロック図、第
2図は従来例のブロック図、第3図は各入出力回路の電
気回路図である。
FIG. 1 is a block diagram showing the configuration of an embodiment of the present invention, FIG. 2 is a block diagram of a conventional example, and FIG. 3 is an electric circuit diagram of each input/output circuit.

Claims (1)

【特許請求の範囲】[Claims] 基準電位と接地電位とに参照されて判別された入力二値
情報に基づき、基準電位または接地電位に対応した複数
の出力二値情報を制御信号に応答して並列に出力させる
複数の出力手段を有する出力回路において、上記複数の
出力手段に遅延時間の異なる遅延手段をそれぞれ設け、
該遅延手段を介して制御信号を各出力手段に送出するよ
うにしたことを特徴とする出力回路。
A plurality of output means for outputting a plurality of output binary information corresponding to the reference potential or the ground potential in parallel in response to a control signal based on the input binary information determined with reference to the reference potential and the ground potential. In the output circuit, each of the plurality of output means is provided with delay means having different delay times,
An output circuit characterized in that a control signal is sent to each output means via the delay means.
JP61054248A 1986-03-11 1986-03-11 Output circuit Pending JPS62209793A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61054248A JPS62209793A (en) 1986-03-11 1986-03-11 Output circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61054248A JPS62209793A (en) 1986-03-11 1986-03-11 Output circuit

Publications (1)

Publication Number Publication Date
JPS62209793A true JPS62209793A (en) 1987-09-14

Family

ID=12965241

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61054248A Pending JPS62209793A (en) 1986-03-11 1986-03-11 Output circuit

Country Status (1)

Country Link
JP (1) JPS62209793A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59188882A (en) * 1983-04-11 1984-10-26 Hitachi Ltd Semiconductor memory
JPS6050789A (en) * 1983-08-31 1985-03-20 Hitachi Micro Comput Eng Ltd Semiconductor storage device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59188882A (en) * 1983-04-11 1984-10-26 Hitachi Ltd Semiconductor memory
JPS6050789A (en) * 1983-08-31 1985-03-20 Hitachi Micro Comput Eng Ltd Semiconductor storage device

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