JPS62208647A - Wafer holding mechanism - Google Patents
Wafer holding mechanismInfo
- Publication number
- JPS62208647A JPS62208647A JP3682386A JP3682386A JPS62208647A JP S62208647 A JPS62208647 A JP S62208647A JP 3682386 A JP3682386 A JP 3682386A JP 3682386 A JP3682386 A JP 3682386A JP S62208647 A JPS62208647 A JP S62208647A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- protrusions
- gas
- electrostatic adsorption
- end surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000007246 mechanism Effects 0.000 title claims abstract description 41
- 238000001816 cooling Methods 0.000 claims abstract description 4
- 238000001179 sorption measurement Methods 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 10
- 238000005468 ion implantation Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 2
- 238000007740 vapor deposition Methods 0.000 claims description 2
- 230000003068 static effect Effects 0.000 claims 1
- 239000007789 gas Substances 0.000 abstract description 28
- 239000000112 cooling gas Substances 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 37
- 238000004544 sputter deposition Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 3
- 239000000498 cooling water Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- BGPVFRJUHWVFKM-UHFFFAOYSA-N N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] Chemical compound N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] BGPVFRJUHWVFKM-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- -1 argon ions Chemical class 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔概要〕
半導体ウェハーを真空あるいは減圧条件の下でイオン注
入、スパッタ等の処理を行う場合、ウェハーの裏面側と
温調されたステージとの間にガスを導入して冷却の効率
化が１「ねれる。本発明ではウェハーの保持に静電吸着
機構を用いる場合、吸着性能を改善せる構造について述
べる。゛〔産業上の利用分野〕
本発明は、半導体製造装置において、特に減圧条件で使
用する場合のウェハー保持機構のの改良に関する。[Detailed Description of the Invention] [Summary] When performing ion implantation, sputtering, etc. on a semiconductor wafer under vacuum or reduced pressure conditions, a gas is introduced between the back side of the wafer and a temperature-controlled stage. The present invention describes a structure that improves the adsorption performance when an electrostatic adsorption mechanism is used to hold a wafer. , particularly regarding improvements in wafer holding mechanisms when used under reduced pressure conditions.
半導体のウェハー・プロヒスにおいて、真空あるいは減
圧の条件下でスパッタ蒸着、エツチング、イオン注入等
の処理が行われる。Processes such as sputter deposition, etching, and ion implantation are performed on semiconductor wafer processing under vacuum or reduced pressure conditions.
これらの工程で大きい面積を持つウェハー全面で迅速、
目、つ均一なる処理４行らためにｔ、シ、−１程でウェ
ハー面で発生ずる熱を速やかに１１．ｉ’去゛づること
か望ましい。In these processes, the entire surface of a wafer with a large area can be quickly processed.
11. In order to perform four uniform processing steps, the heat generated on the wafer surface at about t, ci, -1 is quickly removed. It is desirable to write down i'.
）ｍ常考えられる機械的なるウェハ−保持機構では、ウ
ェハーの周囲をフランジで甲面のステージに固定しても
、ｉ戯視的には接触面積は極めて僅がであり、ウェハー
の局部的加熱によりウェハー面はステージより遊離して
熱伝導は極めて悪くなる。) In the conventional mechanical wafer holding mechanism, even if the wafer is fixed to the stage with a flange around the wafer, the contact area is visually very small, and local heating of the wafer may occur. As a result, the wafer surface is separated from the stage and heat conduction becomes extremely poor.
ごのため、ステージ面を平面でなく、凸状の曲面構造に
して接触を良くする方法、ウェハーとステージの間隙に
熱伝導の良好なるコーテイング材を挟む方法、あるいは
ウェハー裏面とステージ間の狭いギャップにガス室を設
はガスの熱伝導を利用する方法等が（に案されている。Therefore, there are methods to improve contact by making the stage surface a convex curved structure instead of a flat surface, inserting a coating material with good heat conduction between the wafer and the stage, or narrowing the gap between the back surface of the wafer and the stage. A method of establishing a gas chamber using the heat conduction of gas has been proposed.
これらの方法は下記公開特許により報告されている。These methods are reported in the following published patents.
特開昭 ５８−２１３４３．１
本発明は、特にガスの熱伝導を利用してウェハーの冷却
を行もと共に、ウェハーの保持にはメカニカル・クラン
プを使用せずに、静電吸着機構を使用して、自動化を行
った場合の吸着機構の改良を行うものである。JP-A-58-21343.1 The present invention particularly utilizes heat conduction of gas to cool the wafer, and also uses an electrostatic adsorption mechanism to hold the wafer without using a mechanical clamp. The aim is to improve the suction mechanism when automated.
従来の技術によるガスの熱転１１による冷却法と静電吸
着を利用−１るウェハーの保持方法を、マグネトロン・
スパッタ蒸着装置を例としてその概略を第２図の断面図
によって説明する。The conventional wafer holding method using gas heat transfer11 and electrostatic adsorption has been replaced by a magnetron/wafer holding method.
Taking a sputter deposition apparatus as an example, its outline will be explained with reference to the sectional view of FIG.
図面において、１は真空容器で排気孔１１とアルゴン等
のガス導入孔１２を備えている。In the drawings, reference numeral 1 denotes a vacuum container equipped with an exhaust hole 11 and a gas introduction hole 12 for gas such as argon.
３は蒸着材料より４（るターゲットで、マク２１−ロン
・スパッタ装置の場合マグネット４と陽極５か配置され
る。3 is a target made of vapor deposition material, and in the case of Mac21-ron sputtering equipment, a magnet 4 and an anode 5 are arranged.
２は被蒸着基板となるウェハーで、ウェハーは静電吸着
機構６とヒートシンク７よりなるステージ８により保持
される。ヒートシンクには冷却水を導入する流入管１３
と排出管１４が接続されて、処理期間中ヒートシンクを
低温に冷却する。Reference numeral 2 denotes a wafer serving as a substrate to be evaporated, and the wafer is held by a stage 8 comprising an electrostatic chuck mechanism 6 and a heat sink 7. The heat sink has an inflow pipe 13 that introduces cooling water.
and an exhaust pipe 14 are connected to cool the heat sink to a low temperature during processing.
静電吸着機構６は、絶縁体のアルミナにより構成され、
内部に直流の電圧が印加される電極９８゜９、が埋込ま
れている。The electrostatic adsorption mechanism 6 is made of alumina as an insulator,
An electrode 98°9 to which a DC voltage is applied is embedded inside.
静電吸着機構６とウェハー２との間は５０μｍ以下の狭
いギャップよりなるガス室］０が設ＬＪられ、冷却ガス
としてＨｅ等のガスをガス導入管１５をｉｌじて導入さ
れる。A gas chamber LJ having a narrow gap of 50 μm or less is provided between the electrostatic adsorption mechanism 6 and the wafer 2, and a gas such as He is introduced as a cooling gas through a gas introduction pipe 15.
第２図では、ターゲット３とステージ間に印加される高
周波電源、静電吸着機構の電源等は省略している。In FIG. 2, a high frequency power source applied between the target 3 and the stage, a power source for the electrostatic adsorption mechanism, etc. are omitted.
第２図のスパッタ装置を用いて、蒸着処理を行う場合、
アルゴン・イオンによりスパッタされたターケソト材料
よりなる原子は、ウェハー上に被着して薄膜を形成する
が、その際衝突エネルギーによりウェハーを加熱する。When performing a vapor deposition process using the sputtering apparatus shown in Fig. 2,
Atoms of the Terquesoto material sputtered by argon ions are deposited on the wafer to form a thin film, with the impact energy heating the wafer.
ウェハーに発生せる熱量は、ガス室に導入されているＨ
ｅガスを介して、静電吸着機構６、ヒートシンク７に伝
達されて除去される。The amount of heat generated in the wafer is due to the H introduced into the gas chamber.
The e-gas is transmitted to the electrostatic adsorption mechanism 6 and the heat sink 7 and removed.
上記に述べた、従来の技術による静電吸着機構では吸着
力が弱く吸着不能と云う問題も生ずる。The conventional electrostatic adsorption mechanism described above has a problem in that the adsorption force is weak and adsorption is impossible.
第２図のウェハー２と静電吸着機構６の部分のみの拡大
せる断面図を第３図（ａ）、その静電吸着機構の上面図
を第３図（ｂ）に示す。FIG. 3(a) is an enlarged sectional view of only the wafer 2 and electrostatic attraction mechanism 6 shown in FIG. 2, and FIG. 3(b) is a top view of the electrostatic attraction mechanism.
静電吸着機構のウェハー側端面には、円板面に複数の突
起１６が分散配置され、周ｉ７Ｊにはリング状の突起１
７が設けられている。また、ガス勇入管１５は分岐して
注入孔１８か複数個所設けられている。On the wafer side end surface of the electrostatic adsorption mechanism, a plurality of protrusions 16 are distributed on the disk surface, and a ring-shaped protrusion 1 is arranged on the circumference i7J.
7 is provided. Further, the gas injection pipe 15 is branched and provided with injection holes 18 at a plurality of locations.
上記の如き構造ではガス室１０に導入されたＩ（ｅガス
の真空容器への洩れを防止することが困難で、これによ
り吸着力が不安定になり吸着不能のウェハーも発生する
。In the structure as described above, it is difficult to prevent the I(e gas introduced into the gas chamber 10 from leaking into the vacuum container), and as a result, the suction force becomes unstable and some wafers cannot be suctioned.
」二記問題点は、静電吸着機構に設りられる突起を従来
の如く周辺のリング状と、円形端面に分散配置された突
起とせすに、中央部領域のめに突起を設けることよりな
る本発明のウェハー保持機構によって解決される。The second problem is that the protrusions provided on the electrostatic adsorption mechanism are arranged in a ring shape around the periphery and protrusions distributed on the circular end surface as in the past, but protrusions are provided in the central area. This problem is solved by the wafer holding mechanism of the present invention.
即ち、その構造はウェハーに面する静電吸着機構の円形
端間には中央部領域にのみ突起が形成され、ウェハーの
裏面と該静電吸着機構の円形端面とにより微小間隙を維
持せる包囲されたガス室が形成された構造よりなる。That is, the structure is such that a protrusion is formed only in the central region between the circular ends of the electrostatic chuck mechanism facing the wafer, and the back surface of the wafer and the circular end face of the electrostatic chuck mechanism are surrounded to maintain a minute gap. It consists of a structure in which a gas chamber is formed.
（１Ｍ４ ＩＩＩ １
静電吸着機構の端面に設ＬＪる突起を、中央部領域Ｇ、
＝限定することに、Ｌリウエハーは真空容器側ニ凸状に
湾曲して保持され、従来の局部的なウェハーと突起との
アンバランスによるガスの洩れの問題か軽減される。(1M4 III 1 The protrusion LJ provided on the end face of the electrostatic adsorption mechanism is placed in the central area G,
=Limitably, the L-riwafer is held in a convexly curved manner on the side of the vacuum container, which reduces the conventional problem of gas leakage due to local imbalance between the wafer and the protrusions.
また、吸着力も大きくな〃）、その結果導入する冷１１
１ガス圧を人にすることが可能となり、ガスの冷却効果
が大きくなる。In addition, the adsorption force is also large (〃), and as a result, the cold 11
It becomes possible to reduce the pressure of one gas to one person, increasing the cooling effect of the gas.
本発明による一実施例を図面により詳細説明する。第１
図ｆａ＋、 （ｂｌは静電吸着機構にウェハーを吸着１
！る状態の断面図（ａｌと静電吸着機構の−１−面図（
ｂｌを示す。An embodiment according to the present invention will be described in detail with reference to the drawings. 1st
Figure fa+, (bl shows the wafer being attracted to the electrostatic attraction mechanism 1.
! A cross-sectional view of the state in which the
Indicates bl.
従来の技術の項において用いた符号と同一のものは説明
を省略する。Explanation of the same reference numerals as those used in the prior art section will be omitted.
第１図では静電吸着機構の端面に第３図の如くリング状
の突起１７は設けず、突起１６も端面の中央部領域１９
にのみ形成されている。In FIG. 1, the ring-shaped projection 17 is not provided on the end surface of the electrostatic adsorption mechanism as shown in FIG.
It is formed only in
第１図（１１）では突起１６を４不形成セる図面を示し
ているか、突起の数はこれに制約されない。突起は高さ
は１０〜１００ μｍの黴小刈法より選ばれる。Although FIG. 1 (11) shows a drawing in which only four protrusions 16 are formed, the number of protrusions is not limited to this. The height of the protrusions is selected from the mold cutting method with a height of 10 to 100 μm.
静電吸着機構の電極９３９．には電源２０が接続され、
約１．５ＫＶの電圧が印加される。Electrostatic adsorption mechanism electrode 939. A power supply 20 is connected to the
A voltage of about 1.5 KV is applied.
導入されるＩＩｅガスの圧力は従来の構造ては２’Ｔ’
ｏ ｒ ｒ以」−で吸着不能の問題が発生したか、第
１図構造では５Ｔｏｒｒの圧力でも安定して吸着可能で
あり、熱伝導特性も改善された。The pressure of IIe gas introduced is 2'T' in the conventional structure.
Although the problem of inability to adsorb occurred with the structure shown in FIG. 1, stable adsorption was possible even at a pressure of 5 Torr, and the heat conduction properties were also improved.
本発明のウェハー保持機構を使用して、−例としてＣＩ
Ｉ Ｆ ３ ＋Ｃ”、 Ｆ ４ガスを用い、Ｐ Ｓ （
）膜をＲＦパワー３Ｗ／ｃｍ２でＲＩＥ法によるエツチ
ングを行った。Using the wafer holding mechanism of the present invention - for example, CI
Using I F 3 +C'' and F 4 gas, P S (
) The film was etched by RIE method with RF power of 3 W/cm2.
その結果、従来の構造ではＩ Ｔｏｒｒ ｌｌｅガス圧
にてエツチング・レートは最大７０００人／！Ｑｉｎ、
分布±６％であったが、本発明の構造では、５Ｔｏｒｒ
のＩ−（ｅガス圧が使用可能で工・ノチング・Ｌ／−１
−も最大９５００人／ｍｉｎ、分布±３％と優れた結果
を得ている。As a result, with the conventional structure, the etching rate is up to 7,000 people/! at I Torr lle gas pressure! Qin,
The distribution was ±6%, but in the structure of the present invention, 5Torr
I-(e gas pressure can be used for machining, notching, L/-1
- also obtained excellent results with a maximum of 9,500 people/min and a distribution of ±3%.
以上に説明ゼるごとく、本発明のウェハー保持機（ハを
使用することにより静電吸着機構の吸着力は著しく改善
され、冷却ガス圧を犬とすることが可能となり冷却効率
も改善れれる。As explained above, by using the wafer holder of the present invention, the adsorption force of the electrostatic adsorption mechanism is significantly improved, the cooling gas pressure can be kept constant, and the cooling efficiency is also improved.
第１図（ａｌ、 （ｂｌは本発明のウェハー保持機構の
構造を説明する図、
第２図は従来のマグネトロン・スパッタ装置を説明する
断面図、
第３図（ａｌ、 （ｂｌは従来のウェハー保持機構の構
造を説明する図、
を示す。
図面において、
■は真空容器、
２はウェハー、
３はターゲソ１〜．
４はマグネット、
５６：ｌ陽極、
６ば静電吸着機構、
７はピー１−シンク、
８はステージ、
９は静電吸着機構の電極、
１０はガス室、
１１ば排気孔、
１２はガス導入孔、
１３は冷却水の流入管、
１４は冷却水の排出管、
１５はガス導入管、
１６ば突起、
１７はリング状突起、
１８はガス注入孔、
１９は中央部領域、
２０は電源、
をそれぞれ示す。Figure 1 (al, (bl) is a diagram explaining the structure of the wafer holding mechanism of the present invention. Figure 2 is a sectional view explaining the conventional magnetron sputtering apparatus. Figure 3 (al, (bl is a diagram explaining the structure of the wafer holding mechanism of the present invention). A diagram illustrating the structure of the holding mechanism is shown. In the drawings, ① is a vacuum container, 2 is a wafer, 3 is a target saw 1 to 4 is a magnet, 56 is an anode, 6 is an electrostatic adsorption mechanism, 7 is a pea 1 - sink, 8 is a stage, 9 is an electrode of the electrostatic adsorption mechanism, 10 is a gas chamber, 11 is an exhaust hole, 12 is a gas introduction hole, 13 is a cooling water inflow pipe, 14 is a cooling water discharge pipe, 15 is a 16 is a projection, 17 is a ring-shaped projection, 18 is a gas injection hole, 19 is a central region, and 20 is a power source.
Claims (1)
ン注入等の処理を行う装置で使用され、ガス冷却と静電
吸着法を適用せるウェハー保持機構として、 ウェハーに面する静電吸着機構（６）の円形端面には中
央部領域（１９）にのみ突起（１６）が形成されて、ウ
ェハーの裏面と該静電吸着機構の円形端面とにより微小
間隙を維持せる包囲されたガス室（１０）が形成された
ことを特徴とするウェハー保持機構。[Claims] Used in equipment that performs processes such as vapor deposition, etching, and ion implantation on the wafer surface in a reduced pressure atmosphere, and as a wafer holding mechanism that applies gas cooling and electrostatic adsorption, the static A protrusion (16) is formed only in the central region (19) on the circular end surface of the electrostatic adsorption mechanism (6), so that a protrusion (16) is formed in the circular end surface of the electrostatic adsorption mechanism (6) to maintain a small gap between the back surface of the wafer and the circular end surface of the electrostatic adsorption mechanism. A wafer holding mechanism characterized in that a gas chamber (10) is formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3682386A JPH0727959B2 (en) | 1986-02-20 | 1986-02-20 | Wafer holding mechanism |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3682386A JPH0727959B2 (en) | 1986-02-20 | 1986-02-20 | Wafer holding mechanism |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62208647A true JPS62208647A (en) | 1987-09-12 |
| JPH0727959B2 JPH0727959B2 (en) | 1995-03-29 |
Family
ID=12480474
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3682386A Expired - Lifetime JPH0727959B2 (en) | 1986-02-20 | 1986-02-20 | Wafer holding mechanism |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0727959B2 (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03105917A (en) * | 1989-09-20 | 1991-05-02 | Hitachi Ltd | Vacuum treatment method and device |
| JPH0446547U (en) * | 1990-08-22 | 1992-04-21 | ||
| JPH07273175A (en) * | 1994-03-31 | 1995-10-20 | Ngk Insulators Ltd | Holding member |
| US5792304A (en) * | 1993-09-16 | 1998-08-11 | Hitachi, Ltd. | Method of holding substrate and substrate holding system |
| EP0947884A2 (en) * | 1998-03-31 | 1999-10-06 | Asm Lithography B.V. | Lithographic projection apparatus with substrate holder |
| JP2012514872A (en) * | 2009-01-11 | 2012-06-28 | アプライド マテリアルズ インコーポレイテッド | Electrostatic end effector apparatus, system, and method for transporting a substrate |
-
1986
- 1986-02-20 JP JP3682386A patent/JPH0727959B2/en not_active Expired - Lifetime
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03105917A (en) * | 1989-09-20 | 1991-05-02 | Hitachi Ltd | Vacuum treatment method and device |
| JPH0446547U (en) * | 1990-08-22 | 1992-04-21 | ||
| US5792304A (en) * | 1993-09-16 | 1998-08-11 | Hitachi, Ltd. | Method of holding substrate and substrate holding system |
| US5961774A (en) * | 1993-09-16 | 1999-10-05 | Hitachi, Ltd. | Method of holding substrate and substrate holding system |
| JPH07273175A (en) * | 1994-03-31 | 1995-10-20 | Ngk Insulators Ltd | Holding member |
| EP0947884A2 (en) * | 1998-03-31 | 1999-10-06 | Asm Lithography B.V. | Lithographic projection apparatus with substrate holder |
| EP0947884A3 (en) * | 1998-03-31 | 2001-07-18 | Asm Lithography B.V. | Lithographic projection apparatus with substrate holder |
| JP2012514872A (en) * | 2009-01-11 | 2012-06-28 | アプライド マテリアルズ インコーポレイテッド | Electrostatic end effector apparatus, system, and method for transporting a substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0727959B2 (en) | 1995-03-29 |
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