JPS6220390A - Semiconductor laser device - Google Patents
Semiconductor laser deviceInfo
- Publication number
- JPS6220390A JPS6220390A JP15817185A JP15817185A JPS6220390A JP S6220390 A JPS6220390 A JP S6220390A JP 15817185 A JP15817185 A JP 15817185A JP 15817185 A JP15817185 A JP 15817185A JP S6220390 A JPS6220390 A JP S6220390A
- Authority
- JP
- Japan
- Prior art keywords
- beo
- laser element
- semiconductor laser
- temperature
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】 〔発明の利用分野〕 本発明は半導体レーザ装置に関するものである。[Detailed description of the invention] [Field of application of the invention] The present invention relates to a semiconductor laser device.
特に発光出射面の構成に関するものである。In particular, it relates to the structure of the light emitting surface.
従来、半導体１ノーザ装置の発光出射端面のコーテイン
グ膜材としては、５ｉｎ２．ＡＱ２（’）、（例えば、
ジエー・ジエー・ニー・ピー、第１９巻、第１９６９〜
１９７４頁、 １９８０ （Ｊ・３■・Ａ−Ｐ↓」−９
Ｎ ｏ １．０ 、１９８０． Ｐ １９６９− Ｐ
１９７４）参照）。Conventionally, as a coating film material for the light emitting end face of a semiconductor 1-norther device, a 5in2. AQ2('), (for example,
G.A.N.P., Volume 19, No. 1969~
1974 pages, 1980 (J・3■・A-P↓”-9
No. 1.0, 1980. P 1969- P
(1974)).
ｓ １．３ Ｎ ４ （例えば、信学技報、０ＱＥ７８
−１１９参照）等が良く用いられている。しかし熱伝導
率としてはＳ ｉ Ｏ２が０．０１４ （Ｗ／Ｑｌｌ
・ｄｅｇ） ｒＡＱ、０３が０−３ ＋ ８１３Ｎ４が
０．２程度であるため光出射端における温度上昇を生じ
、レーザ作用が不安定になることがあり、また劣化を早
めることがある。s 1.3 N 4 (e.g. IEICE Technical Report, 0QE78
-119) etc. are often used. However, the thermal conductivity of S i O2 is 0.014 (W/Qll
・deg) Since rAQ, 03 is about 0-3 + 813N4 is about 0.2, the temperature rises at the light emitting end, which may make the laser action unstable and may accelerate deterioration.
本発明は半導体Ｉノーザ装置の端面コーテイング材に熱
伝導率の高いＢｅＯを用い、端面温度り昇を軽減し、端
面温度［二昇に起因する劣化要素を抑制することにある
。The present invention uses BeO, which has high thermal conductivity, as an end face coating material of a semiconductor I-nozer device to reduce the rise in the end face temperature and to suppress deterioration factors caused by the rise in the end face temperature.
半導体レーザの端面コーティング材として、従来のＳ
ｉＯ２，ＡＱ２０３．Ｓ ｉ３Ｎ４に比べてＢｏｏが熱
伝導率が一桁高い（２、１Ｗ／ ｃｌｌ−ｄｅｇ）ので
、端面温度Ｉ−昇を抑制する効果が大で、特にレーザを
高出力動作させたとき信頼性に優れていることが確認さ
れた。Conventional S is used as an edge coating material for semiconductor lasers.
iO2, AQ203. Compared to Si3N4, Boo has an order of magnitude higher thermal conductivity (2.1W/cll-deg), so it has a great effect in suppressing the rise in end face temperature I-, which improves reliability especially when the laser is operated at high output. It was confirmed that it was excellent.
以下、本発明を実施例を用いて具体的に説明する。半導
体レーザはＧａ、−、ＡＭ、Ａｓ （ｘ＝０．０５゜発
振波長として８３０ｎｍ）のいわゆるｃｓｐ型レーザ素
子の例について説明する。Hereinafter, the present invention will be specifically explained using examples. As the semiconductor laser, an example of a so-called CSP type laser element of Ga, -, AM, As (x=0.05°, oscillation wavelength of 830 nm) will be explained.
第１図は半導体レーザ装置のレーザ光の進行方向に平行
な面での断面図である。１はＧａＡ Ｑ Ａｓ系レーザ
素子、２．３は本発明の誘電体膜ＢｅＯである。FIG. 1 is a cross-sectional view of a semiconductor laser device taken along a plane parallel to the direction in which laser light travels. 1 is a GaA Q As based laser element, and 2.3 is a dielectric film BeO of the present invention.
誘電体膜ＢｅＯの被着法としてスパッタリング法にて被
着する例について説明する。まず半導体レーザ素子をス
パッタ装置内にセットし、真空にし、しかるのちＡｒガ
スを導入する。ターゲットとしてＢｅＯの焼結体を用い
、高周波グロー放電により、レーザ素子の片端面に誘電
体膜ＢｅＯを例えばλ／２の膜厚で被着する。ここでλ
はレーザの発振波長である。つぎに同様の方法によりも
う一方の端面にもＢｅＯをλ／２の膜厚で被着する。以
上の工程で両端面にＢ ｅ Ｏ膜を有するレーザ素子が
完成する。An example in which the dielectric film BeO is deposited by a sputtering method will be described. First, a semiconductor laser element is set in a sputtering device, evacuated, and then Ar gas is introduced. Using a sintered body of BeO as a target, a dielectric film BeO is deposited on one end surface of a laser element to a thickness of, for example, λ/2 by high-frequency glow discharge. Here λ
is the oscillation wavelength of the laser. Next, using the same method, BeO is deposited on the other end face to a thickness of λ/2. Through the above steps, a laser element having B e O films on both end faces is completed.
半導体レーザの端面劣化は端面劣化は端面温度の上昇と
光化学作用による結晶面の酸化が進行することによって
起きる。本発明によるＢａＯ膜を有するレーザ素子は従
来のＳ ｉ Ｏ２膜、ＡＱ２０３膜よ番Ｊ熱伝導率が高
い。数値例で示すと、ＢａＯは２．１ 、ＡＱ２０．
はＱ、３，５ｉｎ２は０ 、０１．４（Ｗ／■・ｄｅｇ
）である。これら誘電体膜を被着した素子の直流動作で
の端面破壊出力の実測値として、ＡＱ２０３膜を有する
レーザ素子はＳ ｉ Ｏ２膜を有する素子の１−０３
倍、ＢａＯ膜を有する素子はＳ ｊＯ２膜を有する素子
の］、６倍であった。Deterioration of the end face of a semiconductor laser is caused by an increase in the end face temperature and progress of oxidation of the crystal plane due to photochemical action. The laser device having the BaO film according to the present invention has higher thermal conductivity than the conventional SiO2 film and AQ203 film. To give a numerical example, BaO is 2.1, AQ is 20.
is Q, 3,5in2 is 0, 01.4 (W/■・deg
). As an actual measured value of the end face breakdown output in DC operation of a device coated with these dielectric films, the laser device with the AQ203 film is 1-03 higher than the device with the SiO2 film.
The device with the BaO film was 6 times that of the device with the SjO2 film.
第２図は本発明によるレーザ装置の７０℃。FIG. 2 shows the laser device according to the present invention at 70°C.
２５ｍＷ動作の寿命試験特性の結果の１例を示す。An example of the results of the life test characteristics for 25 mW operation is shown.
実線は本発明のＢａＯ膜を有するレーザ素子、点線は従
来品のＳ ｊ、 ０２膜を有するレーザ素子である。従
来品は除々に劣化しているが本発明によるものは安定に
動作している。The solid line represents a laser device having a BaO film of the present invention, and the dotted line represents a laser device having a conventional S j,02 film. The conventional product is gradually deteriorating, but the product according to the present invention is operating stably.
以−１−の如＜ＢａＯ膜を有するレーザ素子は端面温度
上昇が少ないために従来品に比べて端面破壊出力および
信頼性テス１へでも良好な結果が得られた。As described below-1-, since the laser element having the BaO film has a small rise in temperature at the end face, better results were obtained in end face breakdown output and reliability test 1 than the conventional product.
また半導体レーザ装置としてＧ ａｊ−、Ａ Ｑ、Ａ
５（ｘ＝０．０５ ）Ｃ８Ｐ型レーザについて説明した
が光共振器として反射面を有するものであれば結晶材料
は何ら制限を受けない。さらにレーザ素子そのものの構
成はＣ８Ｐ型レーザ以外の１３ Ｈ型レーザその他の諸
々の半導体レーザ素子等信れでも本発明が適用可能であ
ることは明らかである。Also, as a semiconductor laser device, G aj-, A Q, A
5 (x=0.05) C8P type laser has been described, but there are no restrictions on the crystal material as long as it has a reflective surface as an optical resonator. Furthermore, it is clear that the present invention is applicable to the structure of the laser element itself, such as a 13H type laser and various other semiconductor laser elements other than the C8P type laser.
本発明によれば、熱伝導率の高いＢｅｏを半導体レーザ
の端面コーテイング材として用いることにより、端面破
壊出力が従来のＳ ｉ Ｏ２膜のそれより１．６倍向上
し、また信頼性試験でも、７０℃、２５ｍＷの高温、高
出力動作で、安定した動作が確認された。According to the present invention, by using Beo, which has high thermal conductivity, as the end face coating material of a semiconductor laser, the end face breakdown output is improved by 1.6 times than that of the conventional SiO2 film, and also in reliability tests, Stable operation was confirmed at a high temperature of 70°C and a high output of 25mW.
第１図は本発明の実施例を示すレーザ装置の断面図、第
２図はレーザ装置の寿命特性の一例を示す図である。
１・・・半導体レーザ素子、２・・・誘電体膜（Ｂｅｄ
）、３・・・誘電体膜（Ｂｏｏ）。FIG. 1 is a sectional view of a laser device showing an embodiment of the present invention, and FIG. 2 is a diagram showing an example of the life characteristics of the laser device. 1... Semiconductor laser element, 2... Dielectric film (Bed
), 3... dielectric film (Boo).
Claims (1)
成る半導体レーザ装置。1. A semiconductor laser device comprising a BeO film on the light emitting end face of a semiconductor laser element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15817185A JPS6220390A (en) | 1985-07-19 | 1985-07-19 | Semiconductor laser device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15817185A JPS6220390A (en) | 1985-07-19 | 1985-07-19 | Semiconductor laser device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6220390A true JPS6220390A (en) | 1987-01-28 |
Family
ID=15665827
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15817185A Pending JPS6220390A (en) | 1985-07-19 | 1985-07-19 | Semiconductor laser device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6220390A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63224386A (en) * | 1987-03-13 | 1988-09-19 | Sharp Corp | Semiconductor laser device |
| US6519853B1 (en) | 1998-07-03 | 2003-02-18 | Citizen Watch Co., Ltd. | Method of manufacturing hand for analog electronic timepiece |
-
1985
- 1985-07-19 JP JP15817185A patent/JPS6220390A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63224386A (en) * | 1987-03-13 | 1988-09-19 | Sharp Corp | Semiconductor laser device |
| US6519853B1 (en) | 1998-07-03 | 2003-02-18 | Citizen Watch Co., Ltd. | Method of manufacturing hand for analog electronic timepiece |
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