JPS62203365A - Solid-state image pickup device - Google Patents
Solid-state image pickup deviceInfo
- Publication number
- JPS62203365A JPS62203365A JP61045862A JP4586286A JPS62203365A JP S62203365 A JPS62203365 A JP S62203365A JP 61045862 A JP61045862 A JP 61045862A JP 4586286 A JP4586286 A JP 4586286A JP S62203365 A JPS62203365 A JP S62203365A
- Authority
- JP
- Japan
- Prior art keywords
- vertical
- gate
- scanning circuit
- photoelectric conversion
- solid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006243 chemical reaction Methods 0.000 claims abstract description 23
- 238000003384 imaging method Methods 0.000 claims description 18
- 230000003287 optical effect Effects 0.000 claims description 7
- 238000000034 method Methods 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 description 4
- 239000000523 sample Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000005070 sampling Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体基板上に多数の光電変換素子と各光電変
換素子の光情報を取り出す走査回路を集積化した固体撮
像装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a solid-state imaging device in which a large number of photoelectric conversion elements and a scanning circuit for extracting optical information from each photoelectric conversion element are integrated on a semiconductor substrate.
本発明は固体撮像装置において、垂直スイッチのドレイ
ン側を接続する垂直信号線の容量、抵抗を垂直スイッチ
の構成を第１ゲート及び第２ゲートの２つのゲートをも
つ様な構成とした小すより極少化し、垂直信号線の容量
、抵抗に起因するランダムノイズを低減するものである
。The present invention relates to a solid-state imaging device in which the capacitance and resistance of a vertical signal line connecting the drain side of a vertical switch are reduced by a small wire in which the vertical switch is configured to have two gates, a first gate and a second gate. This minimizes the random noise caused by the capacitance and resistance of the vertical signal line.
第４図に従来の固体撮像装置の回路図を示す。 FIG. 4 shows a circuit diagram of a conventional solid-state imaging device.
光電変換素子３からの信号は垂直スイッチ４とゲート選
択線８により、垂直信号線乙に取り出される。さらに出
力スイッチ５を通り出力信号線７により外部に取り出さ
れる。水平走査回路１１０と垂直走査回路２００は、複
数の光電変換素子からの光信号を垂直スイ、フチ４．出
力スイッチ５を通して順次読み出す為の回路である。A signal from the photoelectric conversion element 3 is taken out to a vertical signal line B by a vertical switch 4 and a gate selection line 8. Furthermore, it passes through an output switch 5 and is taken out to the outside via an output signal line 7. The horizontal scanning circuit 110 and the vertical scanning circuit 200 convert optical signals from a plurality of photoelectric conversion elements into vertical switches, edges 4. This is a circuit for sequentially reading data through the output switch 5.
第４図に示す様な従来の固体撮像装置は、光電変換索子
からの信号を取り出す為にある垂直信号線の容量に起因
する雑音が大きく、画像品質。Conventional solid-state imaging devices such as the one shown in FIG. 4 suffer from large noise due to the capacitance of the vertical signal line used to extract signals from the photoelectric conversion probe, resulting in poor image quality.
Ｓ ／ Ｎに悪彫響を与え、特に最低被写体照度はＣＣ
Ｄ撮像累子索子較するとかなり劣っていた。It gives a bad impression on S/N, especially the minimum subject illuminance is CC.
When compared with D-imaging, it was considerably inferior.
本発明の目的は、垂直信号線の容置を減少させることに
より固体撮像装置の雑音を低減し、また光電変換部の素
子数を増やす事なく、画像品質の向上を計った固体撮像
索子を提供する事である。An object of the present invention is to reduce the noise of a solid-state imaging device by reducing the space for vertical signal lines, and to provide a solid-state imaging device that improves image quality without increasing the number of elements in the photoelectric conversion section. It is to provide.
本発明の固体撮像装置は、二次元状に配列した複数個の
′ｊｔ、電変換素子と上記光電変換索子の選択を行なう
複数の垂直スイッチと、光電変換素子により得られた信
号を順次取り出すための水平走査回路及び垂直走査回路
を備えた固体撮像装置において、上記垂直スイッチは第
１ゲート及び第２ゲートを有し、第１ゲートは水平走査
回路の出力に接続され、第２ゲートは垂直走査回路の出
力に接続され、第１ゲートと第２ゲートは互いに異なる
層に配線されたゲート電極であり、上記垂直スイッチの
ドレインは上記光電変換索子に接続される様に構成した
ことを特徴とする。The solid-state imaging device of the present invention includes a plurality of 'jt' arranged in a two-dimensional manner, a plurality of vertical switches for selecting an electric conversion element and the photoelectric conversion element, and a signal obtained by the photoelectric conversion element is sequentially extracted. In a solid-state imaging device equipped with a horizontal scanning circuit and a vertical scanning circuit for It is connected to the output of the scanning circuit, the first gate and the second gate are gate electrodes wired in different layers, and the drain of the vertical switch is connected to the photoelectric conversion cable. shall be.
第４図に示す様な従来の固体撮像索子の雑音は光電変換
索子からの光信号を取り出すための垂直信号線の容量に
起因する雑音成分が全雑音の大部分を占めている事が知
られており、垂直信号線による雑音電流の平均値工２
は次式で与えられる。The noise of a conventional solid-state imaging probe as shown in Fig. 4 is due to the noise component resulting from the capacitance of the vertical signal line for extracting the optical signal from the photoelectric conversion probe, which accounts for most of the total noise. It is known that the average value of the noise current due to the vertical signal line is
is given by the following equation.
エ − ４ ・Ｋ −Ｔ−Ｏｖ−ＩＦ−ｄＦＫ−ボル
ツマン定数、Ｔ一温度、Ｃｖ−垂直信号線の容ｕ＋ＩＦ
−出力スイッチの繰り返し周波数、ｄＦ−帯域中
雑音電流Ｙ２ は垂直信号線の容量及び繰り返し周波
数Ｆに依存しており、Ｃｖの値を減少させるか、あるい
は繰り返し周波数を下げるかにより低減できる事がわか
る。本発明は垂直スイッチのゲートを第１ゲート、第２
ゲートをもつ様な構成とする事によりＣｖ ＝ Ｏとし
、雑音を低減化するものである。E-4 ・K -T-Ov-IF-dFK-Boltzmann constant, T-temperature, Cv-capacity u+IF of vertical signal line
- Repetition frequency of the output switch, dF - It can be seen that the mid-band noise current Y2 depends on the capacitance of the vertical signal line and the repetition frequency F, and can be reduced by decreasing the value of Cv or lowering the repetition frequency. . In the present invention, the gates of the vertical switch are the first gate and the second gate.
By configuring the device to have a gate, Cv=O and noise is reduced.
第１図は本発明の１実施例である。１１０は水平走査回
路、２００は垂直走査回路である。FIG. 1 shows one embodiment of the invention. 110 is a horizontal scanning circuit, and 200 is a vertical scanning circuit.
垂直走査回路の１出力がゲート選択線８を選択すると、
横１列全ての垂直スイッチの第２ゲート４２が選択され
るが、このときはまだ垂直スイッチは導通状態にない。When one output of the vertical scanning circuit selects the gate selection line 8,
The second gates 42 of all the vertical switches in one horizontal row are selected, but at this time the vertical switches are not yet in a conductive state.
次に水平走査回路１１０により順次、水平走査回路出力
１が選択され第１ゲート４１が選択され、光電変換索子
３からの光信号が出力信号線７に順次取り田される。第
３図は垂直スイッチ部の断面図であるが、４１は第１ゲ
−）、４２は第２ゲートで、４３の垂直スイッチのドレ
イン拡散色は第１図では出力信号線７に配線され、第４
図の垂直信号線６＆こ相当する配線は存在しない。従っ
て垂直信号線の容ｆｆ１ｃｖによる雑音電荷の発生はな
く、内部雑音の少ない固体撮像索子が構成できる。Next, the horizontal scanning circuit 110 sequentially selects the horizontal scanning circuit output 1 and selects the first gate 41, and the optical signals from the photoelectric conversion cable 3 are sequentially output to the output signal line 7. FIG. 3 is a cross-sectional view of the vertical switch section, where 41 is the first gate, 42 is the second gate, and the drain diffusion color of the vertical switch 43 is wired to the output signal line 7 in FIG. Fourth
There is no wiring corresponding to the vertical signal line 6& in the figure. Therefore, no noise charges are generated due to the capacitance ff1cv of the vertical signal line, and a solid-state imaging probe with low internal noise can be constructed.
第２図は本発明の別の実施例である。１１０は水平走査
回路、２００は風向走査回路である。FIG. 2 shows another embodiment of the invention. 110 is a horizontal scanning circuit, and 200 is a wind direction scanning circuit.
垂直走査回路の１出力がゲート選択軸８を選択すると、
横１列全ての垂直スイッチの第２ゲート４２と出力スイ
ッチ５のゲートが選択される。次に水平走査回路１１０
により順次垂直スイッチの第１ゲート４１が選択され、
垂直スイッチ４は導通状態となり、光電変換索子３の光
信号が信号線６を通り出力信号Ｍａ７に伝達される。こ
こで信号線６は第４図の固体撮像装置の垂直信号線６に
相当するものであるが、通常第４図の垂直信号線のサン
プリング周波数は１５ＫＨｚ程度なのに対し、第２図の
方式による信号線乙のサンプリング周波数は６０Ｈｚと
従来の固体撮像装置に比較して、約’／２５０となり第
２図の信号線６の容量に起因して発生する雑音は非常に
少ないものとなる。When one output of the vertical scanning circuit selects the gate selection axis 8,
The second gates 42 of all the vertical switches in one horizontal row and the gates of the output switches 5 are selected. Next, the horizontal scanning circuit 110
The first gate 41 of the vertical switch is sequentially selected by
The vertical switch 4 becomes conductive, and the optical signal from the photoelectric conversion cable 3 is transmitted through the signal line 6 as an output signal Ma7. Here, the signal line 6 corresponds to the vertical signal line 6 of the solid-state imaging device shown in FIG. 4, but normally the sampling frequency of the vertical signal line shown in FIG. The sampling frequency of line B is 60 Hz, which is approximately '/250 compared to conventional solid-state imaging devices, and the noise generated due to the capacitance of the signal line 6 in FIG. 2 is extremely small.
本発明によれば、垂直スイッチのゲートを第１ゲートと
第２ゲートの２つのゲートを有する４１！な構成とした
事により従来発生していた垂直信号線の容Ｍによる雑音
電流を零をこするかあるいは１／２５０以下にする事が
出き、内部雑音の非常に少ない固体撮像素子を提供する
事が出来る。また、１光を変換素子当り１コの垂直スイ
ッチで構成する為、従来の固体撮像装置と比較すると配
線が１本増加するものの開口率は同等とする小が可能な
為、光信号のダイナミックレンジを低下させる事なく良
好な画像品質を提供する事が出来る。According to the present invention, the gate of the vertical switch has two gates, a first gate and a second gate, 41! With this configuration, the noise current caused by the capacitance M of the vertical signal line, which conventionally occurs, can be reduced to zero or 1/250 or less, thereby providing a solid-state image pickup device with extremely low internal noise. I can do things. In addition, since one light is composed of one vertical switch per conversion element, the number of wires increases by one compared to conventional solid-state imaging devices, but the aperture ratio can be reduced to the same level, allowing the dynamic range of the optical signal. It is possible to provide good image quality without reducing the image quality.
第１図〜第２図は、本発明の実施例を示す固体撮像装置
の回路図。
第３図は、垂直スイッチ部の断面図。
第４図は、従来の固体撮像装置の回路図。
１・・・・・・水平走査回路出力配線
６・・・・・・光電変換索子
４・・・・・・垂直スイッチ
５・・・・・・出力スイッチ
６・・・・・・垂直信号線
７・・・・・・出力信号線
８・・・・・・ゲート選択線
３１・・・光電変換部Ｎ型拡散層
３２・・・光電変換部Ｐ型拡散層
４１・・・第１ゲート
４２・・・第２ゲート
４３・・・垂直スイッチドレインＮ型拡散層７１・・・
垂直スイッチドレイン出力配線９１・・・ＬＯＯＯ３酸
化膜
９２・・・酸化膜
１００・・・Ｐ型基板
１１０・・・水平走査回路
２００・・・垂直走査回路
以 上
出願人 セイコーエプソン株式会社
１ＴＩ４＊４−”ｔｂＸ ４１”ｌ 路口笛／Ｉ￥Ｊ
固伴徹イ龜孟Ｉす１ヨ路１呂
第２１コ
第 ３ ）凹
従来り囚伴撮濃２１う回路口
第午ｊ刃1 and 2 are circuit diagrams of a solid-state imaging device showing an embodiment of the present invention. FIG. 3 is a sectional view of the vertical switch section. FIG. 4 is a circuit diagram of a conventional solid-state imaging device. 1... Horizontal scanning circuit output wiring 6... Photoelectric conversion cable 4... Vertical switch 5... Output switch 6... Vertical signal Line 7...Output signal line 8...Gate selection line 31...Photoelectric conversion section N-type diffusion layer 32...Photoelectric conversion section P-type diffusion layer 41...First gate 42... Second gate 43... Vertical switch drain N-type diffusion layer 71...
Vertical switch drain output wiring 91...LOOO3 oxide film 92...Oxide film 100...P-type substrate 110...Horizontal scanning circuit 200...Vertical scanning circuit and above Applicant Seiko Epson Corporation 1TI4*4 -”tb
Claims (1)
換素子の選択を行なう複数の垂直スイッチと光電変換素
子により得られた光信号を順次取り出す為の水平走査回
路及び垂直走査回路を備えた固体撮像装置において、上
記垂直スイッチは第１ゲート及び第２ゲートを有し、第
１ゲートは水平走査回路の出力に接続され第２ゲートは
垂直走査回路の出力に接続され、第１ゲートと第２ゲー
トは互いに異なる層に配線されたゲート電極であり、上
記垂直スイッチのドレインは上記光電変換素子に接続さ
れる様に構成した事を特徴とする固体撮像装置。A plurality of photoelectric conversion elements arranged in a two-dimensional manner, a plurality of vertical switches for selecting the photoelectric conversion elements, and a horizontal scanning circuit and a vertical scanning circuit for sequentially extracting optical signals obtained by the photoelectric conversion elements. In the solid-state imaging device, the vertical switch has a first gate and a second gate, the first gate is connected to the output of the horizontal scanning circuit, the second gate is connected to the output of the vertical scanning circuit, and the first gate and the second gate are connected to the output of the vertical scanning circuit. A solid-state imaging device characterized in that the two gates are gate electrodes wired in different layers, and the drain of the vertical switch is connected to the photoelectric conversion element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61045862A JPS62203365A (en) | 1986-03-03 | 1986-03-03 | Solid-state image pickup device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61045862A JPS62203365A (en) | 1986-03-03 | 1986-03-03 | Solid-state image pickup device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62203365A true JPS62203365A (en) | 1987-09-08 |
Family
ID=12731021
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61045862A Pending JPS62203365A (en) | 1986-03-03 | 1986-03-03 | Solid-state image pickup device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62203365A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL9301775A (en) * | 1992-10-16 | 1994-05-16 | Casio Computer Co Ltd | Photoelectric conversion system. |
-
1986
- 1986-03-03 JP JP61045862A patent/JPS62203365A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL9301775A (en) * | 1992-10-16 | 1994-05-16 | Casio Computer Co Ltd | Photoelectric conversion system. |
| US5463420A (en) * | 1992-10-16 | 1995-10-31 | Casio Computer Co., Ltd. | Photoelectric conversion system |
| US5583570A (en) * | 1992-10-16 | 1996-12-10 | Casio Computer Co., Ltd. | Photoelectric conversion system |
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