JPS62202043A - Sliding contact point material for vacuum device - Google Patents

Sliding contact point material for vacuum device

Info

Publication number
JPS62202043A
JPS62202043A JP61044104A JP4410486A JPS62202043A JP S62202043 A JPS62202043 A JP S62202043A JP 61044104 A JP61044104 A JP 61044104A JP 4410486 A JP4410486 A JP 4410486A JP S62202043 A JPS62202043 A JP S62202043A
Authority
JP
Japan
Prior art keywords
sliding contact
bias voltage
contact point
sliding
vacuum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61044104A
Other languages
Japanese (ja)
Other versions
JPH0225420B2 (en
Inventor
Kenji Hara
賢治 原
Mitsuaki Ikeda
満昭 池田
Takenori Harada
原田 武徳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP61044104A priority Critical patent/JPS62202043A/en
Publication of JPS62202043A publication Critical patent/JPS62202043A/en
Publication of JPH0225420B2 publication Critical patent/JPH0225420B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Contacts (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To obtain a contact point material capable of impressing a bias voltage stably for many hours without causing increase in electric resistance, by constituting a sliding contact point for supplying a bias voltage in a vacuum device forming thin films of specific percentage of W and Ag. CONSTITUTION:In the vacuum device forming thin films in vacuum by sputtering, ion plating, etc., the contact point for sliding for bias voltage supply is composed of a W-Ag alloy containing 30-80% W prepared, e.g., by a sintering process. In this way, the increase in contact resistance caused by seizure is prevented, so that bias voltage can be impressed to the sliding contact point part stably for many hours.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、スパッタリング、イオンブレーティング等に
より真空中で薄膜を形成する真空装置において、バイア
ス電圧を供給するための摺動接点として使用される材料
に関する。
[Detailed Description of the Invention] [Industrial Application Field] The present invention is used as a sliding contact for supplying a bias voltage in a vacuum apparatus that forms a thin film in vacuum by sputtering, ion blating, etc. Regarding materials.

〔従来の技術〕[Conventional technology]

スパッタリング、イオンブレーティング等により真空中
で薄膜を形成する真空装置は、第3図に示すような構造
を持っている。すなわち、真空槽1内に配置されている
スパッタ電極2にターゲット3を載置し、シャッター4
を介して該ターゲット3に被処理物Wを対峙させる。そ
して、被処理物Wの近傍には、加熱用ヒータ5が配置さ
れている。スパッタリング、イオンブレーティング等に
よって被処理物Wの外周に薄膜を形成させるため、駆動
用モータ6からチェーン7及び回転軸8を介して伝達さ
れる駆動力により被処理物Wを回転するように、被処理
物Wが回転軸8の一端に取り付けられている。また、被
処理物Wに電圧を印加するため、電圧導入端子9から接
点保持台10.固定側接点11.摺動側接点12及び回
転軸8を経て被処理物Wに至る回路が形成されている。
A vacuum apparatus for forming a thin film in vacuum by sputtering, ion blasting, etc. has a structure as shown in FIG. That is, the target 3 is placed on the sputtering electrode 2 placed in the vacuum chamber 1, and the shutter 4 is
The object W to be processed is made to face the target 3 via the target 3. A heater 5 is arranged near the object W to be processed. In order to form a thin film on the outer periphery of the workpiece W by sputtering, ion blasting, etc., the workpiece W is rotated by a driving force transmitted from the drive motor 6 via the chain 7 and the rotating shaft 8. A workpiece W is attached to one end of the rotating shaft 8. In addition, in order to apply a voltage to the object W to be processed, the voltage introduction terminal 9 is connected to the contact holder 10. Fixed side contact 11. A circuit is formed that leads to the workpiece W via the sliding contact 12 and the rotating shaft 8.

このような回転以外に被処理物が移動する場合にも、そ
の被処理物に対する電気的導通を摺動接触的に行う必要
がある。このための摺動接点として、従来はステンレス
調や電気抵抗の小さい銀、 w4等の純金属が使用され
ている。
Even when the object to be processed moves in addition to such rotation, it is necessary to provide electrical continuity to the object through sliding contact. Conventionally, sliding contacts for this purpose have been made of stainless steel or pure metals with low electrical resistance, such as silver or W4.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

しかしながら、真空装置内に配置されている摺動接点は
、その表面に厚くて強固な酸化被膜が生成しにくいため
、摩!11抵抗が大きい。その結果、摺動接点に焼付き
が起こり、接触抵抗が増加し易い、そこで、この摺動接
点として硬度が大きく電気抵抗の小さい材料を使用する
必要がある。
However, sliding contacts placed in vacuum equipment are difficult to form a thick and strong oxide film on their surfaces, so they are prone to wear and tear. 11 The resistance is large. As a result, the sliding contact tends to seize and the contact resistance increases.Therefore, it is necessary to use a material with high hardness and low electrical resistance for the sliding contact.

ところが、従来から使用されている摺動接点材料は、硬
度は大きいが電気抵抗も大きく、或いは電気抵抗は小さ
いが硬度も小さいものであった。
However, conventionally used sliding contact materials have either high hardness but high electrical resistance, or low electrical resistance but low hardness.

したがって、従来から使用されている摺動接点材料では
、短時間に摺動部の電気抵抗が増加し、被処理物にバイ
アス電圧を印加することが不可能となる。このような摺
動接点材料を使用するとき、長時間の処理を行う必要が
ある厚い被膜の形成、処理面積の大きな被処理物に対す
る処理等に際して、目的とする被膜を形成することがで
きなかった。たとえば、外径80龍程度の円板の外周部
に厚さ10戸のSs −Co薄膜を形成する場合、約6
時間にわたってスパッタリングが継続される。この処理
工程の中途で、摺動接点の接触抵抗が増加し、バイアス
電圧の供給が不安定になる。このため、処理の途中でス
パッタリングを中断し、真空を破って摺動接点を交換し
、再度電圧を印加することを余儀無くされていた。その
ため、目的とする被膜を完成させるために必要とする時
間が更に長くなっていた。
Therefore, with conventionally used sliding contact materials, the electrical resistance of the sliding portion increases in a short period of time, making it impossible to apply a bias voltage to the object to be processed. When using such sliding contact materials, it has been impossible to form the desired film when forming thick films that require long-term processing, or when processing objects with large processing areas. . For example, when forming a 10-thick Ss-Co thin film on the outer periphery of a disk with an outer diameter of about 80 mm, approximately 6 mm
Sputtering continues over time. In the middle of this process, the contact resistance of the sliding contacts increases and the supply of bias voltage becomes unstable. For this reason, it has been necessary to interrupt sputtering in the middle of the process, break the vacuum, replace the sliding contact, and apply voltage again. Therefore, the time required to complete the desired coating has become even longer.

そこで、本発明は、従来の摺動接点材料におけるこのよ
うな問題を解消すべく案出されたものであり、長時間に
わたって電気抵抗の増加を招くことなくバイアス電圧を
安定して印加することが可能な摺動接点材料を提供する
ことを目的とする。
Therefore, the present invention was devised to solve these problems with conventional sliding contact materials, and makes it possible to stably apply a bias voltage over a long period of time without causing an increase in electrical resistance. The purpose is to provide a possible sliding contact material.

〔問題点を解決するための手段〕[Means for solving problems]

本発明の真空装置用摺動接点材料は、その目的を達成す
べく、タングステン40〜70%。銀残部からなること
を特徴とする。
In order to achieve the purpose, the sliding contact material for vacuum equipment of the present invention contains 40 to 70% tungsten. It is characterized by consisting of a silver remainder.

なおここでいう該摺動接点材料とは、第3図に示した固
定側接点、tw動側接点の片方或いは双方に対して使用
される材料をい・う。
Note that the sliding contact material herein refers to a material used for one or both of the fixed side contact and the twin moving side contact shown in FIG.

〔作用〕[Effect]

本発明の真空装置用摺動接点材料の中で、タングステン
の含有量が40%未満或いは80%を越えるとき、その
材料の接触抵抗が大きくなり、従来の材料と同様に長時
間にわたって安定してバイアス電圧を印加することがで
きない。すなわち、タングステン含有量が少ないときは
、恨の溶着が生じ易く、接点部の表面が凹凸になり、接
触抵抗を増加させる。このタングステン含有量の増加に
伴い、真空中で摺動接点材料を使用するときに、タング
ステン上に薄い酸化被膜が生成され、この被膜が潤滑作
用を呈する。したがって、前記溶着が防がれる。しかし
、タングステン含有量が80%を越えるとき、接点部の
表面全体が酸化物で覆われ、接触抵抗の増加を招く。
In the sliding contact material for vacuum equipment of the present invention, when the content of tungsten is less than 40% or more than 80%, the contact resistance of the material becomes large and it is stable over a long period of time like conventional materials. Unable to apply bias voltage. That is, when the tungsten content is low, welding tends to occur, and the surface of the contact portion becomes uneven, increasing contact resistance. With this increase in tungsten content, a thin oxide film is formed on the tungsten, which exhibits a lubricating effect when the sliding contact material is used in vacuum. Therefore, said welding is prevented. However, when the tungsten content exceeds 80%, the entire surface of the contact portion is covered with oxide, leading to an increase in contact resistance.

〔実施例〕〔Example〕

本実施例における摺動接点は、焼結法により製造したタ
ングステン30〜80%を含むタングステン−銀合金で
ある。このうち、タングステン50%及び銀50%から
なる合金を摺動接点部に用いた真空装置用給電機構の構
成例を第1図に示す。
The sliding contact in this example is a tungsten-silver alloy containing 30-80% tungsten manufactured by a sintering method. FIG. 1 shows a configuration example of a power supply mechanism for a vacuum device using an alloy consisting of 50% tungsten and 50% silver for the sliding contact portion.

該給電機構は、ベース131回転軸8及び駆動用歯車1
4を備えている。ベース13に取り付けられている接点
保持台10に配置された固定側接点11に対して摺動接
触する摺動側接点12を、固着ネジ15によって回転軸
8に固定している。該回転軸8は、軸受16を介してベ
ース13上で回転可能に配置されており、その一端には
被処理物Wが嵌合されている。また、回転軸8と駆動用
歯車14及び軸受16との間、並びにベース13と接点
保持台10との間には絶縁物17が介在されており、回
転軸8.固定側接点11及び摺動側接点12から構成さ
れる摺動接点部並びに被処理物Wをアースから電気的に
浮かせた状態に維持している。この構成によるとき、回
転軸8及び被処理物Wの合計重量が、接触圧力として前
記摺動接点部に印加される。なお、符番18は電圧端子
取付は用ネジである。
The power feeding mechanism includes a base 131, a rotating shaft 8, and a driving gear 1.
It is equipped with 4. A sliding contact 12 that comes into sliding contact with a fixed contact 11 disposed on a contact holder 10 attached to a base 13 is fixed to the rotating shaft 8 by a fixing screw 15. The rotary shaft 8 is rotatably disposed on the base 13 via a bearing 16, and a workpiece W is fitted into one end of the rotary shaft 8. Further, an insulator 17 is interposed between the rotating shaft 8 and the driving gear 14 and the bearing 16, and between the base 13 and the contact holder 10. The sliding contact section composed of the fixed side contact 11 and the sliding side contact 12 and the object W to be processed are maintained electrically suspended from the ground. With this configuration, the total weight of the rotating shaft 8 and the workpiece W is applied to the sliding contact portion as contact pressure. Note that the reference numeral 18 is a screw for attaching the voltage terminal.

固定側接点11を固定している接点保持台10に電圧を
印加すると、電流は、固定側接点11を介して摺動側接
点12に流れ、回転軸8を経て被処理物Wに供給される
。これにより、駆動用歯車14を介して伝達された駆動
力により回転軸8と共に回転している被処理物Wにバイ
アス電圧が印加される。
When a voltage is applied to the contact holder 10 that fixes the fixed contact 11, the current flows through the fixed contact 11 to the sliding contact 12, and is supplied to the workpiece W via the rotating shaft 8. . As a result, a bias voltage is applied to the workpiece W rotating together with the rotating shaft 8 due to the driving force transmitted through the driving gear 14 .

このような摺動接点部を有する装置をスパッタリング用
の真空装置に組み込み、真空槽内を1×10−’tor
r以下に排気した後、アルゴンガスを注入して槽内を0
.02torrに維持してスパッタリングを行い、バイ
アス電圧が安定して印加されている時間を調べた。この
際、接触圧力として荷重200gを摺動接点部に加え、
被処理物Wを毎分1回転の速度で回転させ、60Vの直
流電圧を印加した。その結果を表■に示す。
A device having such a sliding contact part is incorporated into a vacuum device for sputtering, and the inside of the vacuum chamber is heated to 1×10-'tor.
After evacuation to below r, argon gas is injected to bring the inside of the tank to zero.
.. Sputtering was performed while maintaining the bias voltage at 0.02 torr, and the time during which the bias voltage was stably applied was examined. At this time, a load of 200 g was applied to the sliding contact part as contact pressure,
The object W to be processed was rotated at a speed of 1 revolution per minute, and a DC voltage of 60 V was applied. The results are shown in Table ■.

表       ■ 表■から明らかなように、タングステン40〜70%含
存するAg−W合金を摺動接点材料として用いた場合、
バイアス電圧を安定して印加できる時間が7時間以上と
なった。他方、従来の摺動接点材料として最も優れたも
のである銀を用いた場合にあっても、バイアス電圧を安
定して印加できる時間は、1.5時間程度に過ぎなかっ
た。すなわち、本実施例あ摺動接点材料は、従来の材料
に比較して5倍以上の寿命を有する。その結果、円板状
の被処理物Wり(周に5IIl−co薄膜を形成する場
合、従来の摺動接点材料によるとき、真空槽の真空を破
り摺動接点部の交換を行い、再度真空槽内を真空状態に
してスパッタリングを再開する必要があったため、製膜
に長時間を要していた。これに対し、本実施例の摺動接
点材料によるとき、−回の処理で目的とする厚さの薄膜
を形成できるので、処理時間の大幅な短縮を行うことが
可能となった。
Table ■ As is clear from Table ■, when an Ag-W alloy containing 40 to 70% tungsten is used as a sliding contact material,
The time during which the bias voltage could be stably applied was 7 hours or more. On the other hand, even when silver, which is the most excellent conventional sliding contact material, is used, the time during which a bias voltage can be stably applied is only about 1.5 hours. In other words, the sliding contact material of this embodiment has a lifespan five times longer than that of conventional materials. As a result, when forming a 5IIl-co thin film on the circumference of a disk-shaped workpiece W, when using conventional sliding contact materials, the vacuum in the vacuum chamber must be broken, the sliding contact section must be replaced, and the vacuum must be re-vacuumed. It took a long time to form a film because it was necessary to put the inside of the tank into a vacuum state and restart sputtering.In contrast, when using the sliding contact material of this example, the target could be achieved in - times of processing. Since a thin film can be formed, it has become possible to significantly shorten processing time.

なお、本実施例においては摺動接点部として第1図に示
すような形状の固定側接点11及び円筒状の摺動側接点
12を使用したが、タングステン含有量が40〜70%
であるAg−W合金を使用する限り、その摺動接点部は
どのような形状であっても良い。
In this example, a fixed contact 11 shaped as shown in FIG. 1 and a cylindrical sliding contact 12 were used as sliding contacts, but the tungsten content was 40 to 70%.
As long as the Ag-W alloy is used, the sliding contact portion may have any shape.

たとえば、第2図に示したように先端に固定側接点11
を取り付けた板バネ19により摺動側接点12を押圧す
る構造のものでも良い、また、このような摺動接点部の
設置個数は、単数或いは複数のいずれであっても良い。
For example, as shown in FIG.
The structure may be such that the sliding contact 12 is pressed by a plate spring 19 attached thereto, and the number of such sliding contacts may be one or more.

〔発明の効果〕〔Effect of the invention〕

以上に説明したように、本発明においては、真空槽内の
摺動接点部にタングステンを40〜70%含存するへg
−合金を用いているので、焼付きに起因する接触抵抗の
増加が生じず、長時間にわたり安定してバイアス電圧を
摺動接点部に印加することが可能となる。そのため、ス
パッタリング等の処理の途中で摺動接点部の取替えを必
要とすることなく、回転している被処理物に目的とする
厚さの薄膜を形成することができる。
As explained above, in the present invention, the sliding contact portion in the vacuum chamber contains 40 to 70% tungsten.
- Since the alloy is used, there is no increase in contact resistance due to seizure, and it is possible to stably apply bias voltage to the sliding contact portion over a long period of time. Therefore, a thin film of a desired thickness can be formed on a rotating workpiece without requiring replacement of the sliding contact part during a process such as sputtering.

【図面の簡単な説明】 第1図は本発明実施例の摺動接点材料を使用するのに適
した真空装置の給電機構を示し、第2図は他の例を示す
、また、第3図は、前記真空装置の全体構成を示す。
[BRIEF DESCRIPTION OF THE DRAWINGS] FIG. 1 shows a power supply mechanism of a vacuum device suitable for using the sliding contact material of the embodiment of the present invention, FIG. 2 shows another example, and FIG. shows the overall configuration of the vacuum device.

Claims (1)

【特許請求の範囲】[Claims] 1、タングステン40〜70%、銀残部からなることを
特徴とする真空装置用摺動接点材料。
1. A sliding contact material for vacuum equipment, characterized by comprising 40 to 70% tungsten and the remainder silver.
JP61044104A 1986-03-03 1986-03-03 Sliding contact point material for vacuum device Granted JPS62202043A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61044104A JPS62202043A (en) 1986-03-03 1986-03-03 Sliding contact point material for vacuum device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61044104A JPS62202043A (en) 1986-03-03 1986-03-03 Sliding contact point material for vacuum device

Publications (2)

Publication Number Publication Date
JPS62202043A true JPS62202043A (en) 1987-09-05
JPH0225420B2 JPH0225420B2 (en) 1990-06-04

Family

ID=12682304

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61044104A Granted JPS62202043A (en) 1986-03-03 1986-03-03 Sliding contact point material for vacuum device

Country Status (1)

Country Link
JP (1) JPS62202043A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5940214A (en) * 1982-08-31 1984-03-05 Teraoka Seiko Co Ltd Automatic span adjusting method in combination measuring apparatus

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5940214A (en) * 1982-08-31 1984-03-05 Teraoka Seiko Co Ltd Automatic span adjusting method in combination measuring apparatus

Also Published As

Publication number Publication date
JPH0225420B2 (en) 1990-06-04

Similar Documents

Publication Publication Date Title
US6497800B1 (en) Device providing electrical contact to the surface of a semiconductor workpiece during metal plating
US3832514A (en) Device for local electric-spark layering of metals and alloys by means of rotating electrode
US2949592A (en) Adjustable transformer with stabilized contact track
JP2000176704A (en) Guide bush
JPS62202043A (en) Sliding contact point material for vacuum device
US2418804A (en) Electrical resistor and method of making same
JPS61147873A (en) Magnetron sputtering device
US3869368A (en) Methods of sputter deposition of materials
JP4022627B2 (en) Vacuum device equipped with power supply mechanism and power supply method
Yu et al. Contact charge accumulation and reversal on polystyrene and PTFE films upon repeated contacts with mercury
JP2592419B2 (en) Grinding method and grinding machine for workpiece
US3039952A (en) Apparatus for depositing films on article surfaces
US6169260B1 (en) Apparatus for melting a needle using an electric current
JPH03115560A (en) Production of sliding bearing
JP2979477B2 (en) Method for forming hydrogenated amorphous carbon film, gas dynamic pressure bearing formed with the film, spindle motor and rotating body device
JP3043674B2 (en) Method for forming hard carbon film on inner peripheral surface of guide bush
SU1157133A1 (en) Device for applying thin-layer enamel coating on flat articles
KR100245002B1 (en) An oscillator for an ultrasonic humidifier
JPH05230691A (en) Power feeder for full-surface plating device
JP4471561B2 (en) Surface treatment method and machine part manufacturing method
KR20110133020A (en) An abrasion resistance conductor and an abrasion resistance probe by dlc coating
JPH0357193B2 (en)
JPH0259235B2 (en)
JPH11320100A (en) Welding torch
JPH08302497A (en) Power feed roll for plating device and roll supporting mechanism

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term