JPS62200729A - Pressure controlling device - Google Patents
Pressure controlling deviceInfo
- Publication number
- JPS62200729A JPS62200729A JP4182186A JP4182186A JPS62200729A JP S62200729 A JPS62200729 A JP S62200729A JP 4182186 A JP4182186 A JP 4182186A JP 4182186 A JP4182186 A JP 4182186A JP S62200729 A JPS62200729 A JP S62200729A
- Authority
- JP
- Japan
- Prior art keywords
- pressure
- chamber
- vacuum
- sub
- gauge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000007789 gas Substances 0.000 abstract description 26
- 239000011261 inert gas Substances 0.000 abstract description 6
- 238000000034 method Methods 0.000 abstract description 2
- 230000000694 effects Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
Landscapes
- Compressors, Vaccum Pumps And Other Relevant Systems (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 するものである。[Detailed description of the invention] [Industrial application field] It is something to do.
従来の圧力制御は、例えば特開昭５６−９３６９号公報
に記載のように、ペルジャーに直接真空ゲージを取り付
は真空計を介してモータ制御回路に継なぎ、ガス供給回
路に設けたニードルバルブをニードルバルブ制御用モー
タで調整して圧力制御するものがあった。Conventional pressure control, for example, as described in JP-A-56-9369, involves attaching a vacuum gauge directly to the Pel jar, connecting it to the motor control circuit via the vacuum gauge, and installing a needle valve in the gas supply circuit. There was one that controlled the pressure by adjusting it with a needle valve control motor.
上記従来技術は、特定の条件での圧力制御であり、圧力
範囲が高真空の場合や処理ガスによる影響等については
配慮されていない。The above-mentioned conventional technology controls pressure under specific conditions, and does not take into consideration the case where the pressure range is a high vacuum or the influence of processing gas.
しかしこのように、処理室であるペルジャー内の圧力を
真空計で測定し、所定圧力になるように処理室を圧力制
御するものにおいては、圧力か２〜０．０５ Ｔｏｒｒ
近辺の場合、真空計は一般に隔膜式真空計が用いられる
。しかし、この真空計で１Ｏ−３〜１０−’ Ｔｏｒｒ
近辺の圧力を測定しようとした場合、真空計の出力電圧
が数ｍＶ〜数１０ｍＶと低くなり、周辺装置のノイズレ
ベルと同程度となったり、また制御装置であるマイクロ
コンピュータへアナログの圧力値をデジタル信号に換え
て送るためのアナログーテ′ジタル文換ｒｄ（ＡＤコン
バータ）の分解能がとれず、はとんど圧力制御ができな
いという問題があった。However, in the case where the pressure inside the Pelger, which is the processing chamber, is measured with a vacuum gauge and the pressure in the processing chamber is controlled to a predetermined pressure, the pressure is 2 to 0.05 Torr.
In the vicinity, a diaphragm type vacuum gauge is generally used. However, with this vacuum gauge, 1O-3 to 10-' Torr
When trying to measure nearby pressure, the output voltage of the vacuum gauge may be as low as a few mV to several tens of mV, which is comparable to the noise level of peripheral devices, or it may be difficult to send analog pressure values to the microcomputer that is the control device. There was a problem in that the resolution of the analog-to-digital converter (AD converter) used to convert the signal into a digital signal and send it was not high enough to control the pressure.
そこで、隔膜式真空計に換えて熱陰極冷陰極電離真空計
のような気体の電離作用を利用した真空計な用いれば１
Ｏ−３〜１０−’ Ｔａｒｒ 近辺の高真空状態の圧力
測定においても、非常に高精度で圧力測定ができる。し
かしながら、処理ガスにＳＦ６゜ＣＦ４といったフッ素
系ガスやＣＩ！２．ＢＣｌ！３等の塩素系ガスを使用し
てエツチングを行なう装置においては、前記電離真空針
のフィラメントがタングステンや白金等の材質で構成さ
れているため、短時間に焼切れてしまい連続処理の装置
には適さないという問題があった。Therefore, instead of a diaphragm type vacuum gauge, it is recommended to use a vacuum gauge that utilizes the ionization effect of gas, such as a hot cathode and cold cathode ionization vacuum gauge.
Even when measuring pressure in a high vacuum state near O-3 to 10-' Tarr, pressure can be measured with very high accuracy. However, the processing gas includes fluorine-based gases such as SF6°CF4 and CI! 2. BCl! In equipment that performs etching using a chlorine-based gas such as No. The problem was that it was not suitable.
本発明の目的は、処理ガスの種類に左右されることなく
、高真空域の圧力制御を長時間行なうことができる圧力
制御ｍを提供することにある。An object of the present invention is to provide a pressure control m that can perform pressure control in a high vacuum region for a long time, regardless of the type of processing gas.
上記目的は、処理ガスが供給されるとともに真空排気さ
れる処理室と、ガスが供給されるとともに真空排気され
る副真空室とを、差圧ゲージを介して継なぎ、前記副真
空室の圧力を測定し所定圧力に制御する第１の圧力制御
手段と、前記副真空室と前記処理室との差圧を零とする
ように前記処理室の圧力を制御する第２の圧力制御手段
とで構成することにより、達成される。The above purpose is to connect a processing chamber to which processing gas is supplied and evacuated, and a sub-vacuum chamber to which gas is supplied and evacuated, through a differential pressure gauge, so that the pressure in the sub-vacuum chamber is a first pressure control means for measuring and controlling the pressure to a predetermined pressure; and a second pressure control means for controlling the pressure in the processing chamber so as to make the differential pressure between the sub-vacuum chamber and the processing chamber zero. This is achieved by configuring.
副真空室に高真空計の寿命に影響を与えない不活性ガス
または処理ガスを流し、一方では真空排気を行なう。副
真空室の圧力を真空ゲージにより測定し副真空室の圧力
を所定圧力に制御する。処理室には処理ガスを流し真空
排気する。副真空室と処理室との間に設けた差圧ゲージ
により測定した差圧により、処理室の圧力を制御し副真
空室との圧力差が茎となるようにすることによって、処
理室の高真空制御を長時間連続で行なうことができる。An inert gas or processing gas that does not affect the life of the high vacuum gauge is flowed into the sub-vacuum chamber, while evacuation is performed. The pressure in the sub-vacuum chamber is measured by a vacuum gauge, and the pressure in the sub-vacuum chamber is controlled to a predetermined pressure. Processing gas is flowed into the processing chamber and the chamber is evacuated. The pressure in the processing chamber is controlled by the differential pressure measured by a differential pressure gauge installed between the sub-vacuum chamber and the processing chamber, and the pressure difference between the sub-vacuum chamber and the sub-vacuum chamber becomes the base, thereby increasing the pressure in the processing chamber. Vacuum control can be performed continuously for a long time.
以下、本発明の一実施例を第１図により説明する。 An embodiment of the present invention will be described below with reference to FIG.
処理室ｌは、例えば平行平板型電極で構成され、ウェハ
のエツチング処理を行なう処理室である。The processing chamber 1 is configured with, for example, parallel plate type electrodes, and is a processing chamber for etching a wafer.
処理室１には、１ｔｉｔ制御器９を介して図示しない処
理ガス供給装置が継ながる。また、処理室ｌには圧力制
御弁７を介して排気袋ｒＩＩ６が継ながる。A processing gas supply device (not shown) is connected to the processing chamber 1 via a 1tit controller 9 . Further, an exhaust bag rII6 is connected to the processing chamber l via a pressure control valve 7.
副真空室２は、差圧ゲージ３を介して処理室ｌと継なが
る。副真空室２には、流量制御器】５を介して図示しな
い不活性ガス供給装置が継ながる。The sub-vacuum chamber 2 is connected to the processing chamber 1 via a differential pressure gauge 3. An inert gas supply device (not shown) is connected to the sub-vacuum chamber 2 via a flow rate controller 5.
また、副真空室２には、圧力制御弁１３を介して排気袋
ｖｔ！６が共用して継ながろ。In addition, an exhaust bag VT! is connected to the sub-vacuum chamber 2 via a pressure control valve 13. 6 will share it and inherit it.
８および１４は、圧力制御弁７および１３を駆動する制
御用モータである。４は差圧ゲー：）３に継ながる差圧
計、５は一方が差圧計４に継なかり他方が制御用モータ
８に継ながる制御回路である。真空ゲージ１０は、高真
空域の測定が可能な例えば電離型の真空ゲージで副真空
室２に取り付けである。8 and 14 are control motors that drive the pressure control valves 7 and 13. 4 is a differential pressure gauge connected to the differential pressure gauge 3, and 5 is a control circuit in which one side is not connected to the differential pressure gauge 4 and the other side is connected to the control motor 8. The vacuum gauge 10 is, for example, an ionization type vacuum gauge that can measure in a high vacuum range, and is attached to the sub-vacuum chamber 2 .
１１は真空ゲージ１０に継ながる真空計、１２は一方が
真空計１１に継なかり他方が制御用モータ１４に継なが
る制御回路である。二の場合、第１の圧力制御手段は、
真空ゲージ１０．真空計１１．制御回路臣。11 is a vacuum gauge that is connected to the vacuum gauge 10; 12 is a control circuit that is not connected to the vacuum gauge 11 on one side and connected to the control motor 14 on the other side. In case 2, the first pressure control means is
Vacuum gauge 10. Vacuum gauge 11. Control circuit officer.
制御用モーター４および圧力制御弁１３から成る。また
、第２の圧力制御手段は、差圧ゲージ３．差圧計４．制
御回路５．制御用モータ８および圧力制御弁７から成る
。It consists of a control motor 4 and a pressure control valve 13. Further, the second pressure control means includes a differential pressure gauge 3. Differential pressure gauge4. Control circuit 5. It consists of a control motor 8 and a pressure control valve 7.
上記構成醗こおいて、副真空室２に不活性ガスを導入し
、排気装置ｉｔ６で真空排気する。このとき、副真空室
が所定圧力になるように、真空ゲージ１０および真空計
１１により真空度を検出し、制御回路稔によって制御用
モーター４をＵ動して圧力制御弁１３を動かし、副真空
室ｚ内の圧力を調整する。With the above configuration, an inert gas is introduced into the sub-vacuum chamber 2, and the chamber is evacuated by the exhaust device it6. At this time, the degree of vacuum is detected by the vacuum gauge 10 and the vacuum gauge 11 so that the sub-vacuum chamber reaches a predetermined pressure, and the control circuit minor moves the control motor 4 to operate the pressure control valve 13, thereby reducing the sub-vacuum. Adjust the pressure in chamber z.
また、一方では処理室１に処理ガスを導入し、排気装置
６で真空排気する。このとき、差圧ゲー吾
ジおよび差圧計４により、副真空室２と処理室ｌとの差
圧を検出し、制御回路５によって制御用モータ８を駆動
して圧力制御弁７を動かし、処理室ｌ内の圧力を調整し
て、副真空室２との差圧を零にし、処理室１の圧力を所
定圧力に制御する。On the other hand, a processing gas is introduced into the processing chamber 1 and evacuated by the exhaust device 6. At this time, the differential pressure gauge and the differential pressure gauge 4 detect the differential pressure between the sub-vacuum chamber 2 and the processing chamber 1, and the control circuit 5 drives the control motor 8 to operate the pressure control valve 7 to control the processing. The pressure inside the chamber 1 is adjusted to make the differential pressure with the sub-vacuum chamber 2 zero, and the pressure in the processing chamber 1 is controlled to a predetermined pressure.
以上、本−実施例によれば、不活性ガスを用いた副真空
室２を設ける二とにより、電離型の真空ゲージ１０を処
理ガスから保護して長時間の使用が可能となった。また
、差圧ゲージ３を用いることにより、処理室１の処理ガ
スに影響されることなく処理室ｌの圧力を所定圧力に制
御可能となった。As described above, according to this embodiment, by providing the sub-vacuum chamber 2 using an inert gas, the ionization type vacuum gauge 10 can be protected from the processing gas and can be used for a long time. Further, by using the differential pressure gauge 3, the pressure in the processing chamber 1 can be controlled to a predetermined pressure without being affected by the processing gas in the processing chamber 1.
これらにより、処理ガスの種類に左右されることなく、
高真空域の圧力制御を長時間行なうことができる。As a result, regardless of the type of processing gas,
Pressure control in a high vacuum region can be performed for a long time.
また、副真空室に導入するガス種を固定しておけば、処
理ガスに関係な（真空ゲージの感度調整をたびたび行な
う必要がなくなる。Furthermore, by fixing the type of gas introduced into the sub-vacuum chamber, there is no need to frequently adjust the sensitivity of the vacuum gauge related to the processing gas.
また、処理ガス中に真空ゲージ２に影響を与えないガス
が含まれている場合は、そのガスを副真空室２に導入す
ることで、不活性ガス供給装置を設ける必要がなくなり
、全体の簡素化が行なえる。Additionally, if the processing gas contains a gas that does not affect the vacuum gauge 2, introducing that gas into the sub-vacuum chamber 2 eliminates the need for an inert gas supply device, simplifying the overall process. can be converted.
なお、本−実施例では、排気装ば６を処理室ｌ用および
副真空室２用に共用しているが、別々に排気装置を設け
て排気しても良い。In this embodiment, the exhaust system 6 is shared for the processing chamber 1 and the sub-vacuum chamber 2, but separate exhaust systems may be provided for exhaust.
また、副真空室２および処理室ｌの圧力調整を排気系に
設けた圧力制御弁１３および７によって行なっているが
、制御回路１２および５を流皿制御器１５および９に接
続して、流旦制御器でガス流坦を調整して、副真空室２
および処理室工の圧力制御を行なっても良い。また、こ
れら制御位置もいろいろの組合せが可能であるが、この
組合せも本発明に含まれることは言うまでもない。In addition, although the pressure in the sub-vacuum chamber 2 and the processing chamber 1 is adjusted by pressure control valves 13 and 7 provided in the exhaust system, the control circuits 12 and 5 are connected to the flow plate controllers 15 and 9 to First, adjust the gas flow level with the controller, and then open the sub-vacuum chamber 2.
The pressure of the processing chamber may also be controlled. Moreover, various combinations of these control positions are possible, and it goes without saying that these combinations are also included in the present invention.
また、本−実施例では、処理室１が平行平板型′Ｗ１極
で構成されたものとなっているが、処理ガスが導入され
、試料を処理するものであれば、これに限らないことは
言うまでもない。Further, in this embodiment, the processing chamber 1 is configured with a parallel plate type 'W1 pole, but it is not limited to this as long as a processing gas is introduced and a sample is processed. Needless to say.
本発明によれば、処理室とは別に副真空室を設は差圧ゲ
ージにより継なげることで、処理ガスの種類に左右され
ることなく、高真空域の圧力制御を長時間行なうことが
できるという効果がある。According to the present invention, by providing a sub-vacuum chamber separate from the processing chamber and connecting it with a differential pressure gauge, pressure control in a high vacuum region can be performed for a long time regardless of the type of processing gas. There is an effect.
ナｔを示す構成図である。FIG. 3 is a configuration diagram showing the nut.
１・・・・・・処理室、２・・・・・・副真空室、３・
・・・・・差圧ゲージ、６・・・・・・排気装置、７，
１３・・・・・・圧力制御弁、９．１５・・・・・・流
墓制御器、１０・・・・・・真空ゲージ 、、ｉ７．
− ：。1...Processing chamber, 2...Sub-vacuum chamber, 3.
... Differential pressure gauge, 6 ... Exhaust device, 7,
13... Pressure control valve, 9.15... Grave controller, 10... Vacuum gauge, i7.
- :.
代理人 弁理士 小 川 勝 男 □゛し、 、、）
、）。Agent: Patent Attorney Katsuo Ogawa □゛shi, ,,)
,).
Claims (1)
室と、該処理室に差圧ゲージを介して継なげられガスが
供給されるとともに真空排気される副真空室と、該副真
空室の圧力を測定し所定圧力に制御する第１の圧力制御
手段と、前記副真空室と前記処理室との差圧が零となる
ように前記処理室の圧力を制御する第２の圧力制御手段
とから成ることを特徴とする圧力制御装置。1. A processing chamber to which processing gas is supplied and evacuated; a sub-vacuum chamber connected to the processing chamber via a differential pressure gauge and to which gas is supplied and evacuated; a first pressure control means that measures pressure and controls it to a predetermined pressure; and a second pressure control means that controls the pressure of the processing chamber so that the differential pressure between the sub-vacuum chamber and the processing chamber becomes zero. A pressure control device comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4182186A JPS62200729A (en) | 1986-02-28 | 1986-02-28 | Pressure controlling device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4182186A JPS62200729A (en) | 1986-02-28 | 1986-02-28 | Pressure controlling device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62200729A true JPS62200729A (en) | 1987-09-04 |
Family
ID=12618955
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4182186A Pending JPS62200729A (en) | 1986-02-28 | 1986-02-28 | Pressure controlling device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62200729A (en) |
-
1986
- 1986-02-28 JP JP4182186A patent/JPS62200729A/en active Pending
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