JPS62199019U - - Google Patents

Info

Publication number
JPS62199019U
JPS62199019U JP8658786U JP8658786U JPS62199019U JP S62199019 U JPS62199019 U JP S62199019U JP 8658786 U JP8658786 U JP 8658786U JP 8658786 U JP8658786 U JP 8658786U JP S62199019 U JPS62199019 U JP S62199019U
Authority
JP
Japan
Prior art keywords
container
partition wall
lid
disposable coffee
model registration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8658786U
Other languages
English (en)
Japanese (ja)
Other versions
JPH0231076Y2 (cs
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP8658786U priority Critical patent/JPH0231076Y2/ja
Publication of JPS62199019U publication Critical patent/JPS62199019U/ja
Application granted granted Critical
Publication of JPH0231076Y2 publication Critical patent/JPH0231076Y2/ja
Expired legal-status Critical Current

Links

JP8658786U 1986-06-09 1986-06-09 Expired JPH0231076Y2 (cs)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8658786U JPH0231076Y2 (cs) 1986-06-09 1986-06-09

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8658786U JPH0231076Y2 (cs) 1986-06-09 1986-06-09

Publications (2)

Publication Number Publication Date
JPS62199019U true JPS62199019U (cs) 1987-12-18
JPH0231076Y2 JPH0231076Y2 (cs) 1990-08-22

Family

ID=30943027

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8658786U Expired JPH0231076Y2 (cs) 1986-06-09 1986-06-09

Country Status (1)

Country Link
JP (1) JPH0231076Y2 (cs)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6844203B2 (en) 2001-08-30 2005-01-18 Micron Technology, Inc. Gate oxides, and methods of forming
US7026694B2 (en) 2002-08-15 2006-04-11 Micron Technology, Inc. Lanthanide doped TiOx dielectric films by plasma oxidation
US7130220B2 (en) 2002-06-21 2006-10-31 Micron Technology, Inc. Write once read only memory employing floating gates
US7135421B2 (en) 2002-06-05 2006-11-14 Micron Technology, Inc. Atomic layer-deposited hafnium aluminum oxide
US7160577B2 (en) 2002-05-02 2007-01-09 Micron Technology, Inc. Methods for atomic-layer deposition of aluminum oxides in integrated circuits
US7169673B2 (en) 2002-07-30 2007-01-30 Micron Technology, Inc. Atomic layer deposited nanolaminates of HfO2/ZrO2 films as gate dielectrics
US7192824B2 (en) 2003-06-24 2007-03-20 Micron Technology, Inc. Lanthanide oxide / hafnium oxide dielectric layers
US7199023B2 (en) 2002-08-28 2007-04-03 Micron Technology, Inc. Atomic layer deposited HfSiON dielectric films wherein each precursor is independendently pulsed
US7205620B2 (en) 2002-01-17 2007-04-17 Micron Technology, Inc. Highly reliable amorphous high-k gate dielectric ZrOxNy
US7205218B2 (en) 2002-06-05 2007-04-17 Micron Technology, Inc. Method including forming gate dielectrics having multiple lanthanide oxide layers
US7259434B2 (en) 2001-08-30 2007-08-21 Micron Technology, Inc. Highly reliable amorphous high-k gate oxide ZrO2
US7279732B2 (en) 2002-08-26 2007-10-09 Micron Technology, Inc. Enhanced atomic layer deposition
US7410668B2 (en) 2001-03-01 2008-08-12 Micron Technology, Inc. Methods, systems, and apparatus for uniform chemical-vapor depositions
US7429515B2 (en) 2001-12-20 2008-09-30 Micron Technology, Inc. Low-temperature grown high quality ultra-thin CoTiO3 gate dielectrics
US7563730B2 (en) 2006-08-31 2009-07-21 Micron Technology, Inc. Hafnium lanthanide oxynitride films
JP2024020931A (ja) * 2022-08-02 2024-02-15 シロカ株式会社 コーヒーメーカ

Cited By (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7410668B2 (en) 2001-03-01 2008-08-12 Micron Technology, Inc. Methods, systems, and apparatus for uniform chemical-vapor depositions
US6844203B2 (en) 2001-08-30 2005-01-18 Micron Technology, Inc. Gate oxides, and methods of forming
US7259434B2 (en) 2001-08-30 2007-08-21 Micron Technology, Inc. Highly reliable amorphous high-k gate oxide ZrO2
US7208804B2 (en) 2001-08-30 2007-04-24 Micron Technology, Inc. Crystalline or amorphous medium-K gate oxides, Y203 and Gd203
US7429515B2 (en) 2001-12-20 2008-09-30 Micron Technology, Inc. Low-temperature grown high quality ultra-thin CoTiO3 gate dielectrics
US7205620B2 (en) 2002-01-17 2007-04-17 Micron Technology, Inc. Highly reliable amorphous high-k gate dielectric ZrOxNy
US7160577B2 (en) 2002-05-02 2007-01-09 Micron Technology, Inc. Methods for atomic-layer deposition of aluminum oxides in integrated circuits
US7135421B2 (en) 2002-06-05 2006-11-14 Micron Technology, Inc. Atomic layer-deposited hafnium aluminum oxide
US7205218B2 (en) 2002-06-05 2007-04-17 Micron Technology, Inc. Method including forming gate dielectrics having multiple lanthanide oxide layers
US7554161B2 (en) 2002-06-05 2009-06-30 Micron Technology, Inc. HfAlO3 films for gate dielectrics
US7193893B2 (en) 2002-06-21 2007-03-20 Micron Technology, Inc. Write once read only memory employing floating gates
US7369435B2 (en) 2002-06-21 2008-05-06 Micron Technology, Inc. Write once read only memory employing floating gates
US7130220B2 (en) 2002-06-21 2006-10-31 Micron Technology, Inc. Write once read only memory employing floating gates
US7169673B2 (en) 2002-07-30 2007-01-30 Micron Technology, Inc. Atomic layer deposited nanolaminates of HfO2/ZrO2 films as gate dielectrics
US7439194B2 (en) 2002-08-15 2008-10-21 Micron Technology, Inc. Lanthanide doped TiOx dielectric films by plasma oxidation
US7026694B2 (en) 2002-08-15 2006-04-11 Micron Technology, Inc. Lanthanide doped TiOx dielectric films by plasma oxidation
US7279732B2 (en) 2002-08-26 2007-10-09 Micron Technology, Inc. Enhanced atomic layer deposition
US7326980B2 (en) 2002-08-28 2008-02-05 Micron Technology, Inc. Devices with HfSiON dielectric films which are Hf-O rich
US7199023B2 (en) 2002-08-28 2007-04-03 Micron Technology, Inc. Atomic layer deposited HfSiON dielectric films wherein each precursor is independendently pulsed
US7312494B2 (en) 2003-06-24 2007-12-25 Micron Technology, Inc. Lanthanide oxide / hafnium oxide dielectric layers
US7192824B2 (en) 2003-06-24 2007-03-20 Micron Technology, Inc. Lanthanide oxide / hafnium oxide dielectric layers
US7563730B2 (en) 2006-08-31 2009-07-21 Micron Technology, Inc. Hafnium lanthanide oxynitride films
JP2024020931A (ja) * 2022-08-02 2024-02-15 シロカ株式会社 コーヒーメーカ

Also Published As

Publication number Publication date
JPH0231076Y2 (cs) 1990-08-22

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