JPS62186672A - Solid-state image pickup device - Google Patents
Solid-state image pickup deviceInfo
- Publication number
- JPS62186672A JPS62186672A JP61027851A JP2785186A JPS62186672A JP S62186672 A JPS62186672 A JP S62186672A JP 61027851 A JP61027851 A JP 61027851A JP 2785186 A JP2785186 A JP 2785186A JP S62186672 A JPS62186672 A JP S62186672A
- Authority
- JP
- Japan
- Prior art keywords
- solid
- displacement element
- state imaging
- piezoelectric displacement
- imaging device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006073 displacement reaction Methods 0.000 claims abstract description 26
- 239000004020 conductor Substances 0.000 claims abstract description 8
- 238000003384 imaging method Methods 0.000 claims description 30
- 230000000694 effects Effects 0.000 claims description 4
- 230000003287 optical effect Effects 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 12
- 230000010287 polarization Effects 0.000 abstract description 3
- 238000007650 screen-printing Methods 0.000 abstract description 3
- 239000004642 Polyimide Substances 0.000 abstract description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract description 2
- 229920001721 polyimide Polymers 0.000 abstract description 2
- 229910052709 silver Inorganic materials 0.000 abstract description 2
- 239000004332 silver Substances 0.000 abstract description 2
- 238000010030 laminating Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 241001354491 Lasthenia californica Species 0.000 description 1
- 239000005062 Polybutadiene Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011093 chipboard Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000010099 solid forming Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明は信号線の接続を改良した固体撮像装置に関する
。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a solid-state imaging device with improved connection of signal lines.
ＣＯＤ等の固体撮像素子は、半導体基板上に複数の画素
を２次元配列して形成した構成を有し、一般にその解像
度は上記画素数によって定まる。A solid-state image sensor such as a COD has a configuration in which a plurality of pixels are two-dimensionally arranged on a semiconductor substrate, and the resolution is generally determined by the number of pixels.
しかしながら、半導体基板上に形成し得るｉｉ 素数は
製造技術号により制限され、高解像度化を図ることが困
難であると云う不具合を有していた。However, the number of prime numbers that can be formed on a semiconductor substrate is limited by the manufacturing technology, making it difficult to achieve high resolution.
このような問題に対処するため、インターライン転送方
式〇ＣＤ （以下ＩＴ−ＣＣＤと称す）の００き、感光
部（例えばフォトダイオード、以下ＰＤと称す）に蓄積
された信号電荷が垂直ブランキング期間（無効期間）に
おいて同時に垂直ＣＣＤ ｖこ移動され、次のフィール
ド有効切間中Ｖこ読出される撮像物件を何した固体撮像
チップ基板金ｋ ｒｉｉｌ記フィ一フィールド期間期間
に振動中心に位置する叩く振動せしめることにより高解
像度化が試みら７１５てぃる。つまり、固体撮像チップ
基板を該チップ面に対して水平に適当な周波数で適当な
振幅を与えることで、従来の固体撮像装置の高解像度化
を図ろうとするものである。In order to deal with such problems, in the interline transfer type CD (hereinafter referred to as IT-CCD), the signal charge accumulated in the photosensitive part (e.g. photodiode, hereinafter referred to as PD) is transferred during the vertical blanking period. At the same time (invalid period), the vertical CCD v is moved, and during the next field valid period, the imaging object to be read out is struck at the center of vibration during the solid-state imaging chip board gold field period. An attempt was made to increase the resolution by making it vibrate. In other words, by applying an appropriate amplitude at an appropriate frequency to the solid-state imaging chip substrate horizontally with respect to the chip surface, it is attempted to increase the resolution of the conventional solid-state imaging device.
このような固体撮像装置の偏向を行なう方法として、例
えば特開昭５８−２９２７５号公報に示されているよう
に、可動コイルと電磁石を用いたものがある。すなわち
、固体撮像素子１１１１１に固定された可動コイルを、
電磁石を用いて駆動する方法でおる。As a method for deflecting such a solid-state imaging device, there is a method using a moving coil and an electromagnet, as disclosed in, for example, Japanese Patent Laid-Open No. 58-29275. That is, the moving coil fixed to the solid-state image sensor 11111 is
This is a method of driving using an electromagnet.
しかしながら電磁駆動では、電磁石、コイル等の部品が
必要であり、固体撮像素子の一つの特徴でもある小型、
軽量化が十分には発揮できないという問題点があった。However, electromagnetic drive requires components such as electromagnets and coils, and one of the characteristics of solid-state image sensors is their small size and
There was a problem in that the weight reduction could not be sufficiently achieved.
また可動コイルを動かすのに十分な磁力を発生させるた
め、電磁石に流す電流量が多くなり消費電力が大きくな
ってしまうという問題点がめった。また駆動系と固体撮
像素子側とが直接には連結されていないため、駆動力の
伝達ロスも大きかった。Additionally, in order to generate enough magnetic force to move the moving coil, a large amount of current is passed through the electromagnet, resulting in increased power consumption. Furthermore, since the drive system and the solid-state image sensor side are not directly connected, there is a large loss in the transmission of driving force.
前記問題点を解決すべく、特開昭５８−１３０６７７号
公報及び特願昭５８−１２６６７６号にみられるような
、圧電板を用いたバイモル振動子を使った高解像度固体
撮像装置が提系されている。In order to solve the above-mentioned problems, a high-resolution solid-state imaging device using a bimol oscillator using a piezoelectric plate was proposed, as seen in Japanese Patent Application Laid-Open No. 58-130677 and Japanese Patent Application No. 58-126676. ing.
前記提案による高解像度固体撮像装置は第３図に示すよ
うな構造であり、固体撮像素子の信号線にはフレキシブ
ルプリント基板ａυを用いている。The high-resolution solid-state imaging device proposed above has a structure as shown in FIG. 3, and a flexible printed circuit board aυ is used for the signal line of the solid-state imaging device.
また、他の方法として緩効集積層型圧電変位素子を使っ
た高解像度固体撮像装置や、すべり効果積層型圧電変位
素子を使った高解像度面体撮像装置などが提案されてい
る。Other methods have been proposed, such as a high-resolution solid-state imaging device using a slow-effect stacked piezoelectric displacement element and a high-resolution surface area imaging device using a slip-effect stacked piezoelectric displacement element.
前記提案による高解像度固体撮像装置はそれぞ第４図と
第５図に示すような構造であり、固体撮像素子の信号線
にはいずれもフレシキブルプリント基板（１８，２６）
が用いられている。The high-resolution solid-state imaging devices proposed above have structures as shown in FIGS. 4 and 5, and the signal lines of the solid-state imaging devices are all connected to flexible printed circuit boards (18, 26).
is used.
前述のようなフレキシブルプリント基板を用いた信号線
の接続方法は、フレキシブルプリント基板が変位のため
の負荷になること、パッケージリードやチップキャリヤ
などとのハンダ付工程があるために接続の信頼性が低下
すること、フレキシブルプリント基板そのものが１つの
部品としてスペースをとるため、小型化に限界があるこ
となど種々の欠点を有している。The signal line connection method using a flexible printed circuit board as described above has problems with connection reliability because the flexible printed circuit board becomes a load due to displacement, and there is a soldering process for connecting package leads and chip carriers. The flexible printed circuit board itself takes up a lot of space as a component, so there is a limit to miniaturization.
本発明は上記した点ＶＣ＠みてなされたもので、部品点
数が少なく、小型化が可能でありかつ信頼性の高い固体
撮像装置を提供することを目的とする。The present invention has been made in view of the above-mentioned points VC@, and it is an object of the present invention to provide a solid-state imaging device that has a small number of parts, can be miniaturized, and is highly reliable.
本発明は、固体撮像装置の信号線を圧電変位素子の表面
に直接形成したことを特徴とする固体撮像装置である。The present invention is a solid-state imaging device characterized in that a signal line of the solid-state imaging device is directly formed on the surface of a piezoelectric displacement element.
本発明は、固体撮像装置の信号線を圧電変位素子の表面
に直接形成するため、小型化が可能で、部品点数が少な
くかつ信頼性が高くなるばかりかフレキシブルプリント
基板が負荷となることがないため、圧電変位素子の駆動
電圧を低くすることができる。Since the signal line of the solid-state imaging device is directly formed on the surface of the piezoelectric displacement element, the present invention not only enables miniaturization, has fewer parts, and is highly reliable, but also eliminates the burden of a flexible printed circuit board. Therefore, the driving voltage of the piezoelectric displacement element can be lowered.
第１図は、本発明による固体撮像装置の第１の実施例で
ある。FIG. 1 shows a first embodiment of a solid-state imaging device according to the present invention.
（ａ）は斜視図、（ｂ）は上面図を示している。(a) shows a perspective view, and (b) shows a top view.
すべり積層型圧電変位素子（１）は、分極処理を施した
圧電板（例えば京芝セラミックス製Ｔ−９６材８Ｘ８Ｘ
０．１１１）を積層したものであり、その側面には、ポ
リイミドによる絶縁層（２）が形成されている。The sliding laminated piezoelectric displacement element (1) is a piezoelectric plate subjected to polarization treatment (for example, a T-96 material 8X8X made by Kyoshiba Ceramics).
0.111), and an insulating layer (2) made of polyimide is formed on the side surface thereof.
さらにその上にスクリーン印刷法により、信号線となる
銀ペーストによる導体路（３）が形成されている。Furthermore, conductor paths (3) made of silver paste, which will become signal lines, are formed thereon by screen printing.
第２図は本発明による固体撮像装置の第２の実施例であ
る。FIG. 2 shows a second embodiment of the solid-state imaging device according to the present invention.
（ａ）は側百図、（ｂ）は上面図を示している。(a) shows a side view, and (b) shows a top view.
バイモルフ型圧電変位素子は、分極処理を施した圧電板
（１）（例えば東芝セラミック製Ｔ−９６材５Ｘ２３Ｘ
０．１ｍｍ）を補強板を兼ねた共通電極（２）の両側に
接着したものであり、その側面に金属粉末と有機樹脂を
混合した絶縁性ペーストを塗布し。The bimorph type piezoelectric displacement element is a piezoelectric plate (1) subjected to polarization treatment (for example, T-96 material 5X23X manufactured by Toshiba Ceramic).
0.1 mm) is adhered to both sides of a common electrode (2) that also serves as a reinforcing plate, and an insulating paste made of a mixture of metal powder and organic resin is applied to the sides.
（１３８４６３７２）などに示されるレーザー得体形成
法によって、絶縁層（３）と導体路（４）が形成されて
いる。(13846372), etc., the insulating layer (3) and the conductor path (4) are formed by a laser solid-forming method.
なお、本発明は、上述した各実施例に限定されるもので
ｔｒｉない。例えば、前記圧電変位素子としては縦効果
型圧電変位素子を用いることも可能である。また、導体
路の形成は圧電変位素子の一面に限られるものではなく
、必要に応じてバ・「モルフ型圧電変位素子では２面ま
で、積層型圧Ｘ変位素子では、６面まで可能である。Note that the present invention is not limited to each of the embodiments described above. For example, it is also possible to use a longitudinal effect type piezoelectric displacement element as the piezoelectric displacement element. Furthermore, the formation of conductive paths is not limited to one side of the piezoelectric displacement element, but can be formed on up to two sides for a morph-type piezoelectric displacement element, and up to six sides for a laminated piezoelectric displacement element, if necessary. .
また、導体路の形成法に関しても、スクリーン印刷法や
レーザー導体形成法に限定されるものではなく、蒸着法
や無電界メッキ法でも可能である。Further, the method for forming the conductor path is not limited to the screen printing method or the laser conductor forming method, but may also be a vapor deposition method or an electroless plating method.
ざらに絶縁層としてはポリブタジェンなどの有機物質、
あるいは低融点ガラスなどを用いることもできる。その
他１本発明の要旨を逸脱しない範囲で、梅々変形して実
施することが可能である。The insulating layer is made of organic materials such as polybutadiene,
Alternatively, low melting point glass or the like can also be used. Other than that, it is possible to carry out various modifications without departing from the gist of the present invention.
第１図は本発明による固体撮像装置の第１の実施例の斜
視図、及び上面図、第２図は本発明による固体撮像装置
の第２の実施例の側面図及び上面図、第３図〜第５図は
従来例を説明するための図である。
１．２２．２９・・・積層型圧Ｘ変位素子、２．６・・
・絶縁層、３，７・・・導体路、４ 、１２ａ＋１１２
ｂ −圧電板、５ 、１３ａ・１３ｂ −共ｄ ’、１
１ｆｆｌ（Ｔｆ４４強板）、９・２０−２８・・ＣＣＤ
。
チップキャリアｍ １１・１８ａｅ１８ｂ＊２６ａφ
２６ｂ−フレギシブルプリント基板。
代理人 弁理士 則 近 憲 佑
同 竹 花 喜久男
（ａン ［第 １
図
（αン
第３図
第５図FIG. 1 is a perspective view and a top view of a first embodiment of a solid-state imaging device according to the present invention, FIG. 2 is a side view and a top view of a second embodiment of a solid-state imaging device according to the present invention, and FIG. - FIG. 5 is a diagram for explaining a conventional example. 1.22.29...Laminated pressure X displacement element, 2.6...
・Insulating layer, 3, 7... Conductor path, 4, 12a+112
b - piezoelectric plate, 5, 13a, 13b - both d', 1
1ffl (Tf44 strong board), 9・20-28・・CCD
. Chip carrier m 11・18ae18b*26aφ
26b-Flexible printed circuit board. Agent Patent Attorney Ken Yudo Noritake Kikuo Takehana [No. 1
Figure (Figure 3 Figure 5
Claims (4)
と同一平面内で入射光像に対し相対的に移動せしめる圧
電変位素子とを具備した固体撮像装置において前記固体
撮像素子の信号線用導体路を前記圧電変位素子の表面に
絶縁層を介して形成したことを特徴とする固体撮像装置
。(1) For signal lines of the solid-state imaging device in a solid-state imaging device equipped with a solid-state imaging device and a piezoelectric displacement element that moves the solid-state imaging device relative to an incident light image within the same plane as the imaging optical surface. A solid-state imaging device characterized in that a conductor path is formed on the surface of the piezoelectric displacement element via an insulating layer.
れた厚みすべり効果型圧電変位素子であることを特徴と
する特許請求の範囲第１項記載の固体撮像装置。(2) The solid-state imaging device according to claim 1, wherein the piezoelectric displacement element is a thickness shear effect type piezoelectric displacement element composed of one or more piezoelectric displacement elements.
ることを特徴とする特許請求の範囲第１項記載の固体撮
像装置。(3) The solid-state imaging device according to claim 1, wherein the piezoelectric displacement element is a longitudinal effect type piezoelectric displacement element.
子であることを特徴とする特許請求の範囲第１項記載の
固体撮像装置。(4) The solid-state imaging device according to claim 1, wherein the piezoelectric displacement element is a bimorph piezoelectric displacement element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61027851A JPS62186672A (en) | 1986-02-13 | 1986-02-13 | Solid-state image pickup device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61027851A JPS62186672A (en) | 1986-02-13 | 1986-02-13 | Solid-state image pickup device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62186672A true JPS62186672A (en) | 1987-08-15 |
Family
ID=12232420
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61027851A Pending JPS62186672A (en) | 1986-02-13 | 1986-02-13 | Solid-state image pickup device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62186672A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0369283A (en) * | 1989-08-08 | 1991-03-25 | Hamamatsu Photonics Kk | Collection method for image signal and solid-state image pickup device |
-
1986
- 1986-02-13 JP JP61027851A patent/JPS62186672A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0369283A (en) * | 1989-08-08 | 1991-03-25 | Hamamatsu Photonics Kk | Collection method for image signal and solid-state image pickup device |
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