JPS62184769U - - Google Patents

Info

Publication number

JPS62184769U

JPS62184769U JP1986073622U JP7362286U JPS62184769U JP S62184769 U JPS62184769 U JP S62184769U JP 1986073622 U JP1986073622 U JP 1986073622U JP 7362286 U JP7362286 U JP 7362286U JP S62184769 U JPS62184769 U JP S62184769U

Authority

JP

Japan

Prior art keywords

field effect

effect transistor

semiconductor laser

circuit

drain electrode

Prior art date

1986-05-15

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Granted

Links

• Espacenet
• Global Dossier
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• 230000005669 field effect Effects 0.000 claims description 5
• 239000004065 semiconductor Substances 0.000 claims description 3
• 230000003321 amplification Effects 0.000 claims description 2
• 238000003199 nucleic acid amplification method Methods 0.000 claims description 2
• 238000010586 diagram Methods 0.000 description 3
• 239000003990 capacitor Substances 0.000 description 1
• 230000003287 optical effect Effects 0.000 description 1