JPS62184055A - Polyamic acid composition - Google Patents
Polyamic acid compositionInfo
- Publication number
- JPS62184055A JPS62184055A JP2393286A JP2393286A JPS62184055A JP S62184055 A JPS62184055 A JP S62184055A JP 2393286 A JP2393286 A JP 2393286A JP 2393286 A JP2393286 A JP 2393286A JP S62184055 A JPS62184055 A JP S62184055A
- Authority
- JP
- Japan
- Prior art keywords
- polyamic acid
- black
- light
- bis
- weight
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229920005575 poly(amic acid) Polymers 0.000 title claims abstract description 45
- 239000000203 mixture Substances 0.000 title claims description 15
- 239000006096 absorbing agent Substances 0.000 claims abstract description 20
- 229920001721 polyimide Polymers 0.000 abstract description 22
- 239000000758 substrate Substances 0.000 abstract description 18
- 239000004642 Polyimide Substances 0.000 abstract description 8
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 abstract description 7
- 239000002904 solvent Substances 0.000 abstract description 3
- 239000012528 membrane Substances 0.000 abstract 3
- 238000012216 screening Methods 0.000 abstract 2
- 239000010408 film Substances 0.000 description 21
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 15
- 239000000975 dye Substances 0.000 description 13
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 6
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 6
- 239000002243 precursor Substances 0.000 description 6
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000003960 organic solvent Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 230000003595 spectral effect Effects 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 4
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- 239000006097 ultraviolet radiation absorber Substances 0.000 description 4
- VLDPXPPHXDGHEW-UHFFFAOYSA-N 1-chloro-2-dichlorophosphoryloxybenzene Chemical compound ClC1=CC=CC=C1OP(Cl)(Cl)=O VLDPXPPHXDGHEW-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 239000007822 coupling agent Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- 125000006158 tetracarboxylic acid group Chemical group 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- AVQQQNCBBIEMEU-UHFFFAOYSA-N 1,1,3,3-tetramethylurea Chemical compound CN(C)C(=O)N(C)C AVQQQNCBBIEMEU-UHFFFAOYSA-N 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical group [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 2
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 2
- 239000006087 Silane Coupling Agent Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 125000001309 chloro group Chemical group Cl* 0.000 description 2
- 125000004093 cyano group Chemical group *C#N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- KZTYYGOKRVBIMI-UHFFFAOYSA-N diphenyl sulfone Chemical compound C=1C=CC=CC=1S(=O)(=O)C1=CC=CC=C1 KZTYYGOKRVBIMI-UHFFFAOYSA-N 0.000 description 2
- MGHPNCMVUAKAIE-UHFFFAOYSA-N diphenylmethanamine Chemical compound C=1C=CC=CC=1C(N)C1=CC=CC=C1 MGHPNCMVUAKAIE-UHFFFAOYSA-N 0.000 description 2
- 238000004043 dyeing Methods 0.000 description 2
- GNOIPBMMFNIUFM-UHFFFAOYSA-N hexamethylphosphoric triamide Chemical compound CN(C)P(=O)(N(C)C)N(C)C GNOIPBMMFNIUFM-UHFFFAOYSA-N 0.000 description 2
- NAQMVNRVTILPCV-UHFFFAOYSA-N hexane-1,6-diamine Chemical compound NCCCCCCN NAQMVNRVTILPCV-UHFFFAOYSA-N 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 150000002576 ketones Chemical class 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- 125000000962 organic group Chemical group 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 239000001294 propane Substances 0.000 description 2
- -1 propatool Chemical compound 0.000 description 2
- KIDHWZJUCRJVML-UHFFFAOYSA-N putrescine Chemical compound NCCCCN KIDHWZJUCRJVML-UHFFFAOYSA-N 0.000 description 2
- 125000001424 substituent group Chemical group 0.000 description 2
- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical compound O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 description 2
- XFNJVJPLKCPIBV-UHFFFAOYSA-N trimethylenediamine Chemical compound NCCCN XFNJVJPLKCPIBV-UHFFFAOYSA-N 0.000 description 2
- UKRDPEFKFJNXQM-UHFFFAOYSA-N vinylsilane Chemical compound [SiH3]C=C UKRDPEFKFJNXQM-UHFFFAOYSA-N 0.000 description 2
- PWGJDPKCLMLPJW-UHFFFAOYSA-N 1,8-diaminooctane Chemical compound NCCCCCCCCN PWGJDPKCLMLPJW-UHFFFAOYSA-N 0.000 description 1
- VOZKAJLKRJDJLL-UHFFFAOYSA-N 2,4-diaminotoluene Chemical compound CC1=CC=C(N)C=C1N VOZKAJLKRJDJLL-UHFFFAOYSA-N 0.000 description 1
- JBCUKQQIWSWEOK-UHFFFAOYSA-N 2-(benzenesulfonyl)aniline Chemical compound NC1=CC=CC=C1S(=O)(=O)C1=CC=CC=C1 JBCUKQQIWSWEOK-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- OVMJOPDGMMKGSH-UHFFFAOYSA-N 2-[(2-aminophenyl)-methyl-trimethylsilyloxysilyl]aniline Chemical compound C=1C=CC=C(N)C=1[Si](C)(O[Si](C)(C)C)C1=CC=CC=C1N OVMJOPDGMMKGSH-UHFFFAOYSA-N 0.000 description 1
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- NQBXSWAWVZHKBZ-UHFFFAOYSA-N 2-butoxyethyl acetate Chemical compound CCCCOCCOC(C)=O NQBXSWAWVZHKBZ-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 1
- OLQWMCSSZKNOLQ-UHFFFAOYSA-N 3-(2,5-dioxooxolan-3-yl)oxolane-2,5-dione Chemical compound O=C1OC(=O)CC1C1C(=O)OC(=O)C1 OLQWMCSSZKNOLQ-UHFFFAOYSA-N 0.000 description 1
- LXJLFVRAWOOQDR-UHFFFAOYSA-N 3-(3-aminophenoxy)aniline Chemical compound NC1=CC=CC(OC=2C=C(N)C=CC=2)=C1 LXJLFVRAWOOQDR-UHFFFAOYSA-N 0.000 description 1
- LJGHYPLBDBRCRZ-UHFFFAOYSA-N 3-(3-aminophenyl)sulfonylaniline Chemical compound NC1=CC=CC(S(=O)(=O)C=2C=C(N)C=CC=2)=C1 LJGHYPLBDBRCRZ-UHFFFAOYSA-N 0.000 description 1
- ZBMISJGHVWNWTE-UHFFFAOYSA-N 3-(4-aminophenoxy)aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=CC(N)=C1 ZBMISJGHVWNWTE-UHFFFAOYSA-N 0.000 description 1
- AIVVXPSKEVWKMY-UHFFFAOYSA-N 4-(3,4-dicarboxyphenoxy)phthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1OC1=CC=C(C(O)=O)C(C(O)=O)=C1 AIVVXPSKEVWKMY-UHFFFAOYSA-N 0.000 description 1
- AVCOFPOLGHKJQB-UHFFFAOYSA-N 4-(3,4-dicarboxyphenyl)sulfonylphthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1S(=O)(=O)C1=CC=C(C(O)=O)C(C(O)=O)=C1 AVCOFPOLGHKJQB-UHFFFAOYSA-N 0.000 description 1
- HLBLWEWZXPIGSM-UHFFFAOYSA-N 4-Aminophenyl ether Chemical compound C1=CC(N)=CC=C1OC1=CC=C(N)C=C1 HLBLWEWZXPIGSM-UHFFFAOYSA-N 0.000 description 1
- HNHQPIBXQALMMN-UHFFFAOYSA-N 4-[(3,4-dicarboxyphenyl)-dimethylsilyl]phthalic acid Chemical compound C=1C=C(C(O)=O)C(C(O)=O)=CC=1[Si](C)(C)C1=CC=C(C(O)=O)C(C(O)=O)=C1 HNHQPIBXQALMMN-UHFFFAOYSA-N 0.000 description 1
- SSXSADYLNXSHGB-UHFFFAOYSA-N 4-[(3,4-dicarboxyphenyl)-methyl-trimethylsilyloxysilyl]phthalic acid Chemical compound C=1C=C(C(O)=O)C(C(O)=O)=CC=1[Si](C)(O[Si](C)(C)C)C1=CC=C(C(O)=O)C(C(O)=O)=C1 SSXSADYLNXSHGB-UHFFFAOYSA-N 0.000 description 1
- DZIHTWJGPDVSGE-UHFFFAOYSA-N 4-[(4-aminocyclohexyl)methyl]cyclohexan-1-amine Chemical compound C1CC(N)CCC1CC1CCC(N)CC1 DZIHTWJGPDVSGE-UHFFFAOYSA-N 0.000 description 1
- KKTPGXGRDRSYMY-UHFFFAOYSA-N 4-[(4-aminophenyl)-dimethylsilyl]aniline Chemical compound C=1C=C(N)C=CC=1[Si](C)(C)C1=CC=C(N)C=C1 KKTPGXGRDRSYMY-UHFFFAOYSA-N 0.000 description 1
- XYLBCGCMHQVLNJ-UHFFFAOYSA-N 4-[(4-aminophenyl)-methyl-trimethylsilyloxysilyl]aniline Chemical compound C=1C=C(N)C=CC=1[Si](C)(O[Si](C)(C)C)C1=CC=C(N)C=C1 XYLBCGCMHQVLNJ-UHFFFAOYSA-N 0.000 description 1
- GEYAGBVEAJGCFB-UHFFFAOYSA-N 4-[2-(3,4-dicarboxyphenyl)propan-2-yl]phthalic acid Chemical compound C=1C=C(C(O)=O)C(C(O)=O)=CC=1C(C)(C)C1=CC=C(C(O)=O)C(C(O)=O)=C1 GEYAGBVEAJGCFB-UHFFFAOYSA-N 0.000 description 1
- AJIPMRQDNQQFQA-UHFFFAOYSA-N 4-[4-(4-aminophenyl)-4-methylpent-2-en-2-yl]aniline Chemical compound C=1C=C(N)C=CC=1C(C)=CC(C)(C)C1=CC=C(N)C=C1 AJIPMRQDNQQFQA-UHFFFAOYSA-N 0.000 description 1
- VQVIHDPBMFABCQ-UHFFFAOYSA-N 5-(1,3-dioxo-2-benzofuran-5-carbonyl)-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(C(C=2C=C3C(=O)OC(=O)C3=CC=2)=O)=C1 VQVIHDPBMFABCQ-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- MQJKPEGWNLWLTK-UHFFFAOYSA-N Dapsone Chemical compound C1=CC(N)=CC=C1S(=O)(=O)C1=CC=C(N)C=C1 MQJKPEGWNLWLTK-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- ZWXPDGCFMMFNRW-UHFFFAOYSA-N N-methylcaprolactam Chemical compound CN1CCCCCC1=O ZWXPDGCFMMFNRW-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- QLBRROYTTDFLDX-UHFFFAOYSA-N [3-(aminomethyl)cyclohexyl]methanamine Chemical compound NCC1CCCC(CN)C1 QLBRROYTTDFLDX-UHFFFAOYSA-N 0.000 description 1
- OXIKYYJDTWKERT-UHFFFAOYSA-N [4-(aminomethyl)cyclohexyl]methanamine Chemical compound NCC1CCC(CN)CC1 OXIKYYJDTWKERT-UHFFFAOYSA-N 0.000 description 1
- ISKQADXMHQSTHK-UHFFFAOYSA-N [4-(aminomethyl)phenyl]methanamine Chemical compound NCC1=CC=C(CN)C=C1 ISKQADXMHQSTHK-UHFFFAOYSA-N 0.000 description 1
- KXKVLQRXCPHEJC-UHFFFAOYSA-N acetic acid trimethyl ester Natural products COC(C)=O KXKVLQRXCPHEJC-UHFFFAOYSA-N 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- JOSWYUNQBRPBDN-UHFFFAOYSA-P ammonium dichromate Chemical compound [NH4+].[NH4+].[O-][Cr](=O)(=O)O[Cr]([O-])(=O)=O JOSWYUNQBRPBDN-UHFFFAOYSA-P 0.000 description 1
- 150000004984 aromatic diamines Chemical class 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 239000012965 benzophenone Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- HFIYIRIMGZMCPC-UHFFFAOYSA-J chembl1326377 Chemical compound [Na+].[Na+].[Na+].[Na+].[O-]S(=O)(=O)C1=CC2=CC(S([O-])(=O)=O)=C(N=NC=3C=CC(=CC=3)S(=O)(=O)CCOS([O-])(=O)=O)C(O)=C2C(N)=C1N=NC1=CC=C(S(=O)(=O)CCOS([O-])(=O)=O)C=C1 HFIYIRIMGZMCPC-UHFFFAOYSA-J 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- GEQHKFFSPGPGLN-UHFFFAOYSA-N cyclohexane-1,3-diamine Chemical compound NC1CCCC(N)C1 GEQHKFFSPGPGLN-UHFFFAOYSA-N 0.000 description 1
- YQLZOAVZWJBZSY-UHFFFAOYSA-N decane-1,10-diamine Chemical compound NCCCCCCCCCCN YQLZOAVZWJBZSY-UHFFFAOYSA-N 0.000 description 1
- 150000004985 diamines Chemical class 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- PWSKHLMYTZNYKO-UHFFFAOYSA-N heptane-1,7-diamine Chemical compound NCCCCCCCN PWSKHLMYTZNYKO-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- OLAPPGSPBNVTRF-UHFFFAOYSA-N naphthalene-1,4,5,8-tetracarboxylic acid Chemical compound C1=CC(C(O)=O)=C2C(C(=O)O)=CC=C(C(O)=O)C2=C1C(O)=O OLAPPGSPBNVTRF-UHFFFAOYSA-N 0.000 description 1
- KQSABULTKYLFEV-UHFFFAOYSA-N naphthalene-1,5-diamine Chemical compound C1=CC=C2C(N)=CC=CC2=C1N KQSABULTKYLFEV-UHFFFAOYSA-N 0.000 description 1
- DOBFTMLCEYUAQC-UHFFFAOYSA-N naphthalene-2,3,6,7-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C=C2C=C(C(O)=O)C(C(=O)O)=CC2=C1 DOBFTMLCEYUAQC-UHFFFAOYSA-N 0.000 description 1
- SXJVFQLYZSNZBT-UHFFFAOYSA-N nonane-1,9-diamine Chemical compound NCCCCCCCCCN SXJVFQLYZSNZBT-UHFFFAOYSA-N 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- DXGLGDHPHMLXJC-UHFFFAOYSA-N oxybenzone Chemical compound OC1=CC(OC)=CC=C1C(=O)C1=CC=CC=C1 DXGLGDHPHMLXJC-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000006068 polycondensation reaction Methods 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 231100000241 scar Toxicity 0.000 description 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 150000003457 sulfones Chemical class 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 125000000383 tetramethylene group Chemical group [H]C([H])([*:1])C([H])([H])C([H])([H])C([H])([H])[*:2] 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- UHUUYVZLXJHWDV-UHFFFAOYSA-N trimethyl(methylsilyloxy)silane Chemical compound C[SiH2]O[Si](C)(C)C UHUUYVZLXJHWDV-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、ポリアミド酸組成物に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to polyamic acid compositions.
固体素子に対する絶縁膜及びパッジベージlン膜の材料
、半導体集積回路の層間絶縁材料がどの用途として、電
気絶縁性のみならず優れた耐熱性を有するポリイミドが
使用されてきた。一般に。Polyimide, which has not only electrical insulation properties but also excellent heat resistance, has been used as a material for insulating films and pasteboard films for solid-state devices, and as an interlayer insulating material for semiconductor integrated circuits. in general.
ポリイミド膜は前駆体であるポリアミドfI2.1−f
fi布し、熱処理することによりポリアミド酸をポリイ
ミドに転化させることにより形成する。The polyimide film is a precursor polyamide fI2.1-f
It is formed by converting polyamic acid into polyimide by applying fi cloth and heat treatment.
一方、入射光の遮蔽、特に透明であることが必要な装置
の一部に光遮蔽膜を設ける場合、アルミニウムやクロム
などの蒸着膜tノ5ターニングさせて形成する方法が知
られている。以下この方法について詳述する。On the other hand, when providing a light shielding film on a part of a device that needs to be shielded from incident light, especially transparent, a method is known in which it is formed by turning an evaporated film of aluminum, chromium, or the like. This method will be explained in detail below.
液晶表示素子などにみられる透明性が重要となる装置に
組込まれた半導体素子の一部には外部か− らの入射光
によりその機能が低下するものがア気該素子を正、常に
動作させるためには入射光を遮蔽着膜を用いた場合、半
導体部とアルミニウム蒸着膜の間を絶縁することが必要
で、このためにこれらの間に絶縁膜を設けなければなら
ない、また。Some of the semiconductor elements incorporated in devices where transparency is important, such as liquid crystal display elements, have a function that deteriorates due to incident light from the outside; In order to achieve this, when a deposited film is used to shield incident light, it is necessary to insulate the semiconductor portion and the aluminum deposited film, and for this purpose an insulating film must be provided between them.
光遮蔽膜を形成するために絶縁膜上にアルミニウムを蒸
着法によシフイルム形成した後、フォトエツチングを採
用しなければならない。このように。In order to form a light shielding film, a film of aluminum must be formed on the insulating film by vapor deposition, and then photo-etching must be performed. in this way.
製造工程が煩雑になる傾向があり、このためコストが上
昇するという欠点を有している。This has the disadvantage that the manufacturing process tends to be complicated, which increases costs.
以上のような問題点を解決するためなされたものとして
、特開昭60−17422号公報記載の発明がある。こ
の発明は光遮蔽膜として染色した樹脂層を設けれもので
あるが、樹脂層を素子上にまず形成し、所定の個所にフ
ォトエツチングによシ成したマスクを設けてから染色す
るため染料の染色濃度が小さく、充分に入射光を吸収阻
止することが不可能である。さらに、用いる樹脂が水に
可溶であるため毒性の高い重クロム酸アンモニウム等の
耐水不溶化剤を使用しなければならず、又。An invention described in Japanese Unexamined Patent Application Publication No. 17422/1983 has been made to solve the above-mentioned problems. In this invention, a dyed resin layer is provided as a light shielding film, but the resin layer is first formed on the element, and a mask formed by photoetching is provided at a predetermined location before dyeing. The dyeing density is low and it is impossible to absorb and block incident light sufficiently. Furthermore, since the resin used is soluble in water, a water-resistant insolubilizing agent such as highly toxic ammonium dichromate must be used.
ポリビニルアルコール等の樹脂の耐熱性が劣る等の欠点
を有している。It has drawbacks such as poor heat resistance of resins such as polyvinyl alcohol.
前述のように%ポリイミドは固体素子の絶縁膜として用
いられているが、ポリイミド膜と固体素子との接着性が
よくない、このため、ポリイミド膜の前駆体であるポリ
アミド酸に7ミノシラン。As mentioned above, polyimide is used as an insulating film for solid-state devices, but the adhesion between the polyimide film and solid-state devices is poor, so 7-minosilane is added to polyamic acid, which is the precursor of the polyimide film.
エポキシシラン、ビニルシランなどのシランカップリン
グ剤およびチタネートカップリング剤を添加することに
よシ、基板との接着性の向上を図っている。しかし、こ
のようなカップリング剤は高価なものであるため、ポリ
イミド膜を絶縁膜として用いる場合のコストアップの要
因の1つとなっている。By adding a silane coupling agent such as epoxy silane or vinyl silane and a titanate coupling agent, the adhesion to the substrate is improved. However, since such a coupling agent is expensive, it is one of the factors that increases the cost when using a polyimide film as an insulating film.
一方、光逍蔽膜として特開昭60−17422号公報記
載の発明のように染色した樹脂層を用い九場合、光遮蔽
性が低いという欠点がある。On the other hand, when a dyed resin layer is used as the light shielding film as in the invention described in JP-A-60-17422, there is a drawback that the light shielding property is low.
本発明は以上のような問題点に鑑みなされたものであり
、第1の目的は、基板との接着性が良好なポリイミド膜
の前駆体となるポリアミド酸組成物を提供することにあ
る。The present invention has been made in view of the above-mentioned problems, and a first object thereof is to provide a polyamic acid composition that serves as a precursor for a polyimide film that has good adhesion to a substrate.
本発明の第2の目的は、簡易な方法で形成することがで
き、光遮蔽性が高い光遮蔽膜の前駆体となるポリアミド
酸組成物を提供することにある。A second object of the present invention is to provide a polyamic acid composition that can be formed by a simple method and serves as a precursor for a light-shielding film having high light-shielding properties.
〔問題点1解決するための手段と作用〕本発明は、ポリ
アミド酸と光吸収剤を含有することを特徴とするポリア
ミド酸組成物である。[Means and effects for solving problem 1] The present invention is a polyamic acid composition characterized by containing a polyamic acid and a light absorber.
本発明におけるポリアミド酸とは次式の繰返し構造巣位
(式中 R1は二価の有機基、R2は四価の有機基を表
わす)からなる重合体である。この重合体は通常ジアミ
ノ化合物とテトラカルボン酸二無水物との重縮合によっ
て製造される。The polyamic acid in the present invention is a polymer consisting of repeating structural sites of the following formula (wherein R1 represents a divalent organic group and R2 represents a tetravalent organic group). This polymer is usually produced by polycondensation of a diamino compound and a tetracarboxylic dianhydride.
ジアミノ化合物の具体例としては1m−フユニレンジア
ミン、味−フェニレンジアミン、2,4トリレンジアミ
ン% 3,3′−ジアミノジフェニルエーテル、 4
、4’−ジアミノジフェニルエーテル、3.4′−ジア
ミノジフェニルエーテル、3.3’−ジアミノジフェニ
ルスルホン、4.4’−ジアミノジフェニルスルホン、
3.4’−’)アミノジフェニルスルホン、3.3
’−9アミノジフエニルメタン。Specific examples of diamino compounds include 1m-phenylenediamine, aji-phenylenediamine, 2,4-tolylenediamine% 3,3'-diaminodiphenyl ether, 4
, 4'-diaminodiphenyl ether, 3,4'-diaminodiphenyl ether, 3,3'-diaminodiphenylsulfone, 4,4'-diaminodiphenylsulfone,
3.4'-') aminodiphenyl sulfone, 3.3
'-9 aminodiphenylmethane.
s、C−Jアミノジフェニルメタン、4.4’−ジアミ
ノジフェニルメタン、4.4’−ジアミノジフェニルス
ルフィド、3.3’ジアミノジフエニルケトン、3.4
’−ジアミノジフェニルケトン、4.4’−ジアミノジ
フェニルケトン、 2.2’−”ス(噛−アミノフェ
ニル)プロパン、 l 、 3−ヒス(m−アミノフ
ェノキシ)ベンゼン、1,3−ビス(?
φ−アミノフェノキシ)ベンゼン、1,4−ビス!
(◆−アミノフェノキシ)ベンゼン、4−メチル?
−2,4−ビス(番−アミノフェニル)−1−ペンテン
、4−メチル−2,4−ビス(−一アミノフェニル)−
2−ペンテン、J、4−ビス(2゜2−ジメチルーリー
アミノペンジル)ベンゼン。s, C-J aminodiphenylmethane, 4.4'-diaminodiphenylmethane, 4.4'-diaminodiphenyl sulfide, 3.3'diaminodiphenyl ketone, 3.4
'-Diamino diphenyl ketone, 4.4'-diaminodiphenyl ketone, 2.2'-''su(m-aminophenyl)propane, l, 3-his(m-aminophenoxy)benzene, 1,3-bis(? φ-aminophenoxy)benzene, 1,4-bis! (◆-aminophenoxy)benzene, 4-methyl? -2,4-bis(-aminophenyl)-1-pentene, 4-methyl-2,4- Bis(-monoaminophenyl)-
2-Pentene, J, 4-bis(2°2-dimethyl-lyaminopenzyl)benzene.
イミノ−や−フユニレンジアミン、1,5−ジアミノナ
フタレン、2.6−ジアミツナフタレン。imino- or -fuynylene diamine, 1,5-diaminonaphthalene, 2,6-diamitunaphthalene.
4−メチル−2,4−ビス(萼−アミノフェニル)ペン
タン、5(または6)−アミノ−1−(! −アミノフ
ェニル)−1,3,3−トリメチレンダP
ン、ビス(4−7ミノフエニル)ホスフィンオキシト、
4.4’−ジアミノアゾベンゼン、4.4’−ジアミノ
ジフェニル尿素、4.4’−ビス(4−7?
2.2−ビスCtk−(m−7ミノフエノキシ)フェニ
ル〕フロパン、4.4’−ビス(≠−7ミノフエノキシ
)ベンゾフェノン、4.4’−t’ス(φ−アミノフェ
ノキシ)ジフェニルスルホンs4*4’−ビス(?
←アミノフェノキシ)ジフェニルスルホン、4゜?f′
4′−ビス〔φ−(2,2−ジメチル−C−7ミノペン
ジル)フェノキシフベンゾフェノン14,4’?
−ビスC4−(2,2−ジメチル−f−7ミノペンジル
)フェノキシフジフェニルスルホン、ビス(4−アミノ
フェニル)ジメチルシラン、ビス(4−アミノフェニル
)テトラメチルジシロキサン。4-Methyl-2,4-bis(calyx-aminophenyl)pentane, 5(or 6)-amino-1-(!-aminophenyl)-1,3,3-trimethylenedan, bis(4-7minophenyl) ) phosphine oxyto,
4.4'-diaminoazobenzene, 4.4'-diaminodiphenylurea, 4.4'-bis(4-7?2.2-bisCtk-(m-7minophenoxy)phenyl]furopane, 4.4'- Bis(≠-7minophenoxy)benzophenone, 4.4'-t'su(φ-aminophenoxy)diphenylsulfones4*4'-bis(?←aminophenoxy)diphenylsulfone, 4°?f'4'-bis[ φ-(2,2-dimethyl-C-7 minopenzyl)phenoxifbenzophenone 14,4'?-bisC4-(2,2-dimethyl-f-7 minopenzyl)phenoxyfudiphenyl sulfone, bis(4-aminophenyl) Dimethylsilane, bis(4-aminophenyl)tetramethyldisiloxane.
ビス(r−7ミノプロビル)テトラメチル尿素らキサン
、1.4−ビス(r−7ミノプロビルジメチルシリル)
ベンゼン、ビス(4−7ミノブチル)テトラメチルジシ
ロキサン、ビス(r−アミノブロピル)テトラフェニル
ジシロキサン、ビス(噛−アミノフェニル)テトラメチ
ルジシロキサン々どを挙げることができ、更にこれら芳
香族ジアミンの芳香核の水素原子が塩素原子、フッソ原
子、臭素原子、メチル基、メトキシ基、シアノ基、フェ
ニル基等から成る群よシ選択された少なくとも1種の置
換基により置換された化合物であってもよい。また、ジ
メチレンジアミン、トリメチレンジアミン、テトラメチ
レンジアミン、ヘキサメチレンジアミン、ヘプタメチレ
ンジアミン、オクタメチレンジアミン、ノナメチレンジ
アミン、デカメチレンジアミン、1,2−ビス(3′−
7ミノプロポキシ)エタン、 H2N−(CH2)3−
0−(CH,)2−0−(CH2)3−NH4I 、
4−ジアミノシクロヘキサン、4.4′−ジアミノジシ
クロヘキシルメタン、 1.3−ビスアミノメチルシ
クロヘキサンs 1,4−ビスアミノメチルシクロヘキ
サン、1,3−ジアミノシクロヘキサン、 4.4’−
ジアミノジシクロヘキシルイソプロパン、1.4−キシ
リレンジアミン% 2,6−ジアミツピリジン、2,4
−ジアミノ−8−)リアジンなどを挙げることができる
。Bis(r-7minoprovir)tetramethylurea xane, 1,4-bis(r-7minoprovirdimethylsilyl)
Examples of these aromatic diamines include benzene, bis(4-7-minobutyl)tetramethyldisiloxane, bis(r-aminopropyl)tetraphenyldisiloxane, and bis(aminophenyl)tetramethyldisiloxane. Even if it is a compound in which the hydrogen atom of the aromatic nucleus is substituted with at least one substituent selected from the group consisting of a chlorine atom, a fluorine atom, a bromine atom, a methyl group, a methoxy group, a cyano group, a phenyl group, etc. good. Also, dimethylene diamine, trimethylene diamine, tetramethylene diamine, hexamethylene diamine, heptamethylene diamine, octamethylene diamine, nonamethylene diamine, decamethylene diamine, 1,2-bis(3'-
7minopropoxy)ethane, H2N-(CH2)3-
0-(CH,)2-0-(CH2)3-NH4I,
4-diaminocyclohexane, 4,4'-diaminodicyclohexylmethane, 1,3-bisaminomethylcyclohexane s 1,4-bisaminomethylcyclohexane, 1,3-diaminocyclohexane, 4,4'-
Diaminodicyclohexylisopropane, 1,4-xylylenediamine% 2,6-diamitupyridine, 2,4
-diamino-8-) riazine, and the like.
本発明におaては、これらから成る群よフ選択された1
種もしくは2種以上のものが用いられる。In the present invention, a selected one from the group consisting of these
A species or two or more species may be used.
テトラカルボン酸二無水物の具体例としては。Specific examples of tetracarboxylic dianhydride include:
ピロメリット酸二無水物3.3’ 、4.4’−ベンゾ
フェノンテトラカルボン酸二無水物、2,3.3’ 。Pyromellitic dianhydride 3.3', 4.4'-benzophenonetetracarboxylic dianhydride, 2,3.3'.
4′−ベンゾフェノンテトラカルボン酸二無水物。4'-benzophenonetetracarboxylic dianhydride.
3.3’ 、4.4’−ビフェニルテトラカルボン酸二
無水物、ビス(3,4−ジカルボキシフェニル)メタン
ニ無水物、2,2−ビス(3’ 、4’−ジカルボキシ
フェニル)プロパン二m水物、ビス(3,4−ジカルボ
キシフェニル)エーテルm水物、ビス(3,4−ジカル
ボキシフェニル)スルホンニ無水物。3.3',4.4'-biphenyltetracarboxylic dianhydride, bis(3,4-dicarboxyphenyl)methanidianhydride, 2,2-bis(3',4'-dicarboxyphenyl)propane dianhydride m-hydrate, bis(3,4-dicarboxyphenyl) ether m-hydrate, bis(3,4-dicarboxyphenyl)sulfone dianhydride.
ビス(3,4−ジカルボキシフェニル)ジメチルシラン
、ビス(3,4−ジカルボキシフェニル)テトラメチル
ジシロキサンニ無水物、1,4,5.8−ナフタリンテ
トラカルボン酸二無水物、2,3,6,7−ナフタリン
テトラカルボン酸二無水物、ブタンテトラカルボン酸二
無水物などを挙げることができ、更にこれら化合物の水
素原子が塩素原子、7、ツソ原子、臭素原子、メチル基
、メトキシ基、シアノ基、フェニル基等から成る群よシ
選択された少なくとも1種の置換基によシ置換された化
合物であってもよい5本発明においては、これらから成
る群よシ選択された1種もしくは2種以上のものが用い
られる。Bis(3,4-dicarboxyphenyl)dimethylsilane, bis(3,4-dicarboxyphenyl)tetramethyldisiloxane dianhydride, 1,4,5.8-naphthalenetetracarboxylic dianhydride, 2,3 , 6,7-naphthalenetetracarboxylic dianhydride, butanetetracarboxylic dianhydride, etc. Furthermore, the hydrogen atoms of these compounds are chlorine atom, 7, tsuso atom, bromine atom, methyl group, methoxy group. The compound may be substituted with at least one substituent selected from the group consisting of , cyano group, phenyl group, etc.5 In the present invention, one type selected from the group consisting of these Alternatively, two or more types are used.
通常ポリアミド酸は有機溶剤の存在下に製造される。こ
のとき用いる有機溶剤の具体例としてはN、N−ジメチ
ルホルムアミド%N、N−ジメチルアセトアミド、N−
メチル−2−ピロリドン、ジメチルスルホキシド、N−
メチル−ε−カプロラクタム、スルホラン%N、N、N
’ 、N’−テトラメチル尿素、ヘキサメチルホスホル
アミドを挙げることができる。Polyamic acid is usually produced in the presence of an organic solvent. Specific examples of organic solvents used at this time include N,N-dimethylformamide%N, N-dimethylacetamide, N-
Methyl-2-pyrrolidone, dimethyl sulfoxide, N-
Methyl-ε-caprolactam, sulfolane %N, N, N
', N'-tetramethylurea, and hexamethylphosphoramide.
本発明に用いるポリアミド酸は有機溶剤の存在下、ジア
ミノ化合物とテトラカルボン酸二無水物とを当モルもし
くは前者を徒者に対し5モルチ以下の範囲で過剰もしく
は不足した量で1反応源度−20〜70℃の範囲および
反応時間10分〜20時間の範囲の条件で作用させるこ
とによシ製造し、この溶液の状態で又は得られたポリア
ミド酸溶液を水、メタノール、エタノール、アセトン、
メチルエチルケトン等の貧溶剤に注入して重合体を析出
せしめ、しかる後、洗浄、乾燥して取得した状態で用い
ることもできる。ポリアミド酸の分子量は特に制限がな
く基板に塗布したとき十分な物理的強度を保持した膜が
形成できる程度の大きさでよい。The polyamic acid used in the present invention is prepared by combining a diamino compound and a tetracarboxylic dianhydride in the presence of an organic solvent in an excess or insufficient amount within the range of equimolar or 5 molar or less of the former relative to 1 reactant. It is produced by reacting under conditions of 20 to 70°C and reaction time of 10 minutes to 20 hours, and the resulting polyamic acid solution is mixed with water, methanol, ethanol, acetone,
It can also be used in the obtained state by injecting it into a poor solvent such as methyl ethyl ketone to precipitate the polymer, followed by washing and drying. The molecular weight of the polyamic acid is not particularly limited and may be as large as it can form a film that maintains sufficient physical strength when applied to a substrate.
本発明のポリアミド酸組成物に用いる光吸収剤は黒色染
料、赤外線吸収剤、紫外線吸収剤等いか表るものであっ
てもよい、黒色染料は400〜7001mの波長域にお
いて光を吸収するものであればいかなるものでもよく具
体例としては住友化学■製部品名、アミルブラックF−
8BL、スミライトブラックGcC1nt、ダイレクト
ディープブラックXA、スミフィクスブラックB、アル
ミブラックF’−GL 、スミカロンブラック8− B
P。The light absorber used in the polyamic acid composition of the present invention may be any of the following, such as a black dye, an infrared absorber, an ultraviolet absorber, etc. The black dye absorbs light in the wavelength range of 400 to 7001 m. Any kind of material is acceptable, as a specific example is Sumitomo Chemical's part name, Amyl Black F-
8BL, Sumilite Black GcC1nt, Direct Deep Black XA, Sumifix Black B, Aluminum Black F'-GL, Sumikalon Black 8-B
P.
スピリットブラックNo−920,ジャパノールファス
トブラックDconc、スミカカラーブラックPRk3
P365.スξカカラーブラックPR−gT364 、
スミカカラーブラックPR−sT−363、オイルブラ
ックNα1.三井東圧化学■製商品名 ミツイPSブラ
ックB、ミツイPSブラックBG、ミツイブラックEX
−58,ミツイブラックEX−174,田岡化学■製商
品名 オオレオゾールファーストブラックBLNなどを
挙げることができる。本発明においてはこれらの黒色染
料に限定されるものではなく、公知の黒色染料を全て包
含するものでちゃ、更に二色以上の着色染料を使用して
可視光域400〜7QQnmでオ光
ブチイカルブラツクすなわち交遮蔽を形成する方法も含
むものである。Spirit Black No-920, Japanol Fast Black Dconc, Sumika Color Black PRk3
P365. Scar color black PR-gT364,
Sumika Color Black PR-sT-363, Oil Black Nα1. Made by Mitsui Toatsu Chemical Product name Mitsui PS Black B, Mitsui PS Black BG, Mitsui Black EX
-58, Mitsui Black EX-174, Taoka Kagaku ■ trade name Ooleosol Fast Black BLN, and the like. The present invention is not limited to these black dyes, but includes all known black dyes, and further uses two or more colored dyes to produce optical butylene dyes in the visible light range of 400 to 7QQnm. It also includes a method of forming a black or cross-shield.
本発明において黒色染料の使用量はポリアミド酸100
重量部に対し1〜200重量部の範囲。In the present invention, the amount of black dye used is 100% of polyamic acid.
In the range of 1 to 200 parts by weight.
最適には5〜70重量部の範囲が好ましい。黒色染料の
使用量が1重量部未満では光遮蔽効果が小さく200重
量部を超えると塗膜性が劣シ、電気的性能が劣る傾向に
ある。A range of 5 to 70 parts by weight is optimally preferred. If the amount of black dye used is less than 1 part by weight, the light shielding effect is small, and if it exceeds 200 parts by weight, the coating properties tend to be poor and the electrical performance tends to be poor.
赤外線吸収剤は700〜1500mmの波長域において
光を吸収するものであれば特に限定されず。The infrared absorber is not particularly limited as long as it absorbs light in a wavelength range of 700 to 1500 mm.
具体例としては三井東圧化学■製商品名 FAシリーズ
などを挙げることができる。本発明において赤外線吸収
剤の使用量はポリアミド酸100重量部に対し0.1〜
50重量部の範囲、最適には0.5〜40重量部の範囲
が好ましい、赤外線吸収剤の使用量が0.1重量部未満
では光遮蔽効果が小さく50i量部を超えると塗膜性が
劣り電気的性能が劣る傾向にある。Specific examples include the FA series manufactured by Mitsui Toatsu Chemical Co., Ltd. In the present invention, the amount of infrared absorber used is 0.1 to 100 parts by weight of polyamic acid.
A range of 50 parts by weight, most preferably a range of 0.5 to 40 parts by weight. If the amount of infrared absorber used is less than 0.1 parts by weight, the light shielding effect will be small, and if it exceeds 50 parts by weight, the coating properties will be poor. electrical performance tends to be poor.
紫外線吸収剤は4〜4001mの波長域において光を吸
収するものであれば特に限定されず、具P
体側としてはフェニルサリシレー)1−tert−プチ
ルフェニルサリシレート、2,4−ジヒドロキシベンゾ
フェノン、2−ヒドロキシ−4−メトキシベンゾフェノ
ン、2−(2−ヒドロキシ−5−メチルフェニル)ペン
ツトリアゾール、2−エチルへキシル−2−シアノ−3
,3′−ジフェニルアクレレートなどを挙げることがで
きる。本発明において紫外線吸収剤の使用量はポリアミ
ド酸100重量部に対し0.1〜50重量部の範囲、最
適には0.5〜40重量部の範囲が好ましい、紫外線吸
収剤の使用量が0.1重量部未満では光遮蔽効果が小さ
く。The ultraviolet absorber is not particularly limited as long as it absorbs light in the wavelength range of 4 to 4001 m. Hydroxy-4-methoxybenzophenone, 2-(2-hydroxy-5-methylphenyl)penztriazole, 2-ethylhexyl-2-cyano-3
, 3'-diphenylacrylate and the like. In the present invention, the amount of ultraviolet absorber used is preferably in the range of 0.1 to 50 parts by weight, most preferably in the range of 0.5 to 40 parts by weight, based on 100 parts by weight of polyamic acid. If it is less than .1 part by weight, the light shielding effect is small.
50重量部を超えると塗膜性が劣、り、Ml気的性能が
劣る傾向にある。If it exceeds 50 parts by weight, coating properties tend to be poor and Ml vapor performance tends to be poor.
本発明において光吸収剤は前述のような黒色染料、赤外
線吸収剤あるいは紫外線吸収剤t2種以上組合せて用い
ることができる。In the present invention, the light absorber may be a black dye, an infrared absorber, or an ultraviolet absorber such as those described above, and may be used in combination of two or more types.
本発明においてポリアミド酸組成物は溶液の状態で用い
られる。このとき用いる有機溶剤としてはN、N−ジメ
チルホルムアミド、N、N−ジメチルアセトアミド、N
−メチル−2−ピロリドン、ジメチルスルホキシド、N
−メチルε−カグロラクタム、スルホラン、 N、N、
N’ 1.N’−テトラメチル尿素、ヘキサメチルホス
ホルアミドを挙げること゛ができる。更にこれら有機溶
剤にポリアミド酸が析出しない範囲でメタノール、エタ
ノール、プロパツール、メチルエチルケトン、アセトン
、トルエン、キシレン、酢酸メチル、酢酸エチル、メチ
ルセロソルブ、セロソルブ、ブチルセロソルブ。In the present invention, the polyamic acid composition is used in the form of a solution. The organic solvent used at this time is N,N-dimethylformamide, N,N-dimethylacetamide, N
-Methyl-2-pyrrolidone, dimethyl sulfoxide, N
-Methyl ε-caglolactam, sulfolane, N, N,
N'1. N'-tetramethylurea and hexamethylphosphoramide can be mentioned. Furthermore, methanol, ethanol, propatool, methyl ethyl ketone, acetone, toluene, xylene, methyl acetate, ethyl acetate, methyl cellosolve, cellosolve, butyl cellosolve can be used in these organic solvents as long as the polyamic acid does not precipitate.
セロソルブアセテート、プチルセロソルプアセテ−トな
どを添加することも可能である。ポリアミ・ド酸溶液に
おけるポリアミド酸の濃度は0.1〜301J、1ij
−チの範囲、好ましくは0.5〜20重f#−の範囲で
ある。It is also possible to add cellosolve acetate, butyl cellosolve acetate, and the like. The concentration of polyamic acid in the polyamic acid solution is 0.1 to 301J, 1ij
- H, preferably in the range of 0.5 to 20 f#-.
本発明においは更にカーボン粉末、超微粒子状二酸化ケ
イ素、超微粒子状酸化アルミニウム、超微粒子状酸化チ
タニウムなどを添加することにより、光遮蔽性を高める
ことができる。In the present invention, light shielding properties can be enhanced by further adding carbon powder, ultrafine silicon dioxide, ultrafine aluminum oxide, ultrafine titanium oxide, and the like.
また、基板との接着性をよシ一層向上させるために、ア
ミノシラン、エポキシシラン、ビニルシランなどのシラ
ンカップリング剤あるいはチタネートカップリング剤を
添加することもできる。Furthermore, in order to further improve the adhesion to the substrate, a silane coupling agent such as aminosilane, epoxysilane, vinylsilane or a titanate coupling agent may be added.
実施例 1゜
撹拌棒、温度計、滴下ロートをセットした500rrL
tの反応フラスコにピロメリット酸二無水物13.08
7F。Example 1゜500rrL with stirring bar, thermometer, and dropping funnel set
Pyromellitic dianhydride 13.08 to the reaction flask at
7F.
3 、3’ 、 4 、4’−ベンゾフェノンテトラカ
ルボン酸二無水物19332FおよびN、N−ジメチル
アセト7ミ′ド130fvi−仕込み充分に撹拌して0
℃まで冷却した。次にこの懸濁液を0℃に保持して4.
4′−ジアミノジフェニルエーテルIZO12?および
1,4−ビス(縁−アミノフェノキシ)ベンゼン17.
540vをN 、 N’−ジメチルアセトアミド170
fに溶解した溶液を滴下ロートから徐々に滴下した。滴
下終了後θ〜10℃で3.5時間撹拌を続はポリアミド
酸溶液を得た。この溶液をガラス基板上にスピンナーを
用い1 2000RPMで均一に塗布した後130℃で
30分間乾燥して溶剤を除去し、基板から剥離して25
0℃で1時間加熱処理して膜厚が1.1μmのポリイミ
ド膜を得た。このポリイミド膜の分光透過率はF1図曲
線aで示したとおりである。一方。3,3',4,4'-benzophenonetetracarboxylic dianhydride 19332F and N,N-dimethylacetate 7'mide 130 fvi - Stir thoroughly and reduce to 0.
Cooled to ℃. This suspension was then maintained at 0°C and 4.
4'-diaminodiphenyl ether IZO12? and 1,4-bis(rim-aminophenoxy)benzene17.
540v N, N'-dimethylacetamide 170
A solution dissolved in f was gradually added dropwise from the dropping funnel. After completion of the dropwise addition, stirring was continued for 3.5 hours at θ to 10°C to obtain a polyamic acid solution. This solution was applied uniformly onto a glass substrate using a spinner at 12000 RPM, dried at 130°C for 30 minutes to remove the solvent, and peeled off from the substrate for 25 minutes.
A polyimide film having a thickness of 1.1 μm was obtained by heat treatment at 0° C. for 1 hour. The spectral transmittance of this polyimide film is as shown by curve a in the F1 diagram. on the other hand.
上記で得たポリアミド酸溶液10(lに黒色染料スピリ
ットブラックNQ920(住友化学■製商品名)4.7
2を溶解した溶液から同様にして膜厚1.2μmの黒色
のポリイミド!!!ヲ得た。この黒色ポリイミド膜の分
光透過率は第1図曲#i!bで示したとおシである。To 10 l of the polyamic acid solution obtained above, add 4.7 liters of black dye Spirit Black NQ920 (product name manufactured by Sumitomo Chemical ■)
A black polyimide film with a thickness of 1.2 μm was prepared in the same way from a solution of 2. ! ! I got it. The spectral transmittance of this black polyimide film is shown in Figure 1, song #i! This is indicated by b.
実施例 2
ピロメリット酸二無水物15.268F、 3 、3’
、 4 、4’−ベンゾフェノンテトラカルボン酸二
無水物9.667 鳥?
4.4′−ビス(1に一アミノフェノキシ)ビフェニル
フェニル〕プロパン20.525 fおよびN、N−ジ
メチルアセトアミド362fを用い実施例1と同様にし
てポリアミド酸溶液を得た。次にこのポリアミド酸溶液
から実施例】と同様にして膜厚0.97μmのポリイミ
ド膜會得、その分光透過率を第2図曲線aで示した。一
方、上記で得たポリアミド酸溶液100fに黒色染料ミ
ツイPSブラックB(三井東圧化学■製商品名)s、o
rおよび赤外線吸収剤PA1006(三井東圧化学■商
品名)1.3ft−溶解した溶液から同様にして膜厚1
.1μmの黒色ポリイミド膜を得た。この黒色ポリイミ
ド膜の分光透過率は第2図曲Ilbで示したとおシであ
る。Example 2 Pyromellitic dianhydride 15.268F, 3, 3'
, 4,4'-benzophenonetetracarboxylic dianhydride 9.667 Bird? A polyamic acid solution was obtained in the same manner as in Example 1 using 20.525 f of 4.4'-bis(1-aminophenoxy)biphenylphenyl]propane and 362 f of N,N-dimethylacetamide. Next, a polyimide film having a film thickness of 0.97 μm was obtained from this polyamic acid solution in the same manner as in Example, and its spectral transmittance was shown by curve a in FIG. On the other hand, black dye Mitsui PS Black B (trade name manufactured by Mitsui Toatsu Chemical ■) s, o was added to 100 f of the polyamic acid solution obtained above.
r and infrared absorber PA1006 (Mitsui Toatsu Chemical ■trade name) 1.3 ft-A film thickness of 1 was prepared in the same manner from the dissolved solution.
.. A 1 μm black polyimide film was obtained. The spectral transmittance of this black polyimide film is shown in curve Ilb in Figure 2.
また、スイッチング素子(薄膜トランジスタ)アレイを
形成したセラミック基板に上記の黒色ポリアミド溶液を
実施例1に準じて塗布して乾燥。Further, the above black polyamide solution was applied to a ceramic substrate on which a switching element (thin film transistor) array was formed in accordance with Example 1 and dried.
加熱処理(イミド化)シ、つづいてフォトレジストを用
いた公知のパターン形成法によりスイッチング素子部の
み黒色ポリイミドで被覆し、この基板を使用した液晶表
示装置を構成しスイッチング素子駆動特性を評価したと
ころ10.000ルツクスの白色光照射時でもゲート電
圧が0ボルト以下でわずかな電流の増加が認められたが
実用上は全く問題ない。After heat treatment (imidization), only the switching element portion was coated with black polyimide using a known patterning method using photoresist, a liquid crystal display device using this substrate was constructed, and the driving characteristics of the switching element were evaluated. Even when irradiated with white light of 10,000 lux, a slight increase in current was observed when the gate voltage was below 0 volts, but this poses no problem in practice.
実施例 3゜
実施例1で得た黒色染料を配合しないポリアミド酸溶液
をガラス基板上にスピンナーを用いて3000RPMで
均一に塗布した後130℃で30分間乾燥、200℃で
30分間および250℃で1時間加熱処理して膜厚0,
78μmのポリイミド被膜を得た。この被膜をNTカッ
タナイフで2111角の大きさで基板目に切9.その表
面に透明粘着テープ(住友スリーエム社商品名うビア)
をはり合せてテープをひきはがすことによp基板に対す
る密着性t−調べたところ100個の基板目は全て基板
からはがれた。一方実施例1で得た黒色染料を配合した
ポリアミド酸溶液から前記と同様の方法でガラス基板上
に膜厚0.82μm、Oポリイミド被膜を形成し前記と
同様基板に対する密着性を調べた結果。Example 3゜The polyamic acid solution obtained in Example 1 without blending the black dye was applied uniformly onto a glass substrate at 3000 RPM using a spinner, and then dried at 130°C for 30 minutes, at 200°C for 30 minutes, and at 250°C. After heat treatment for 1 hour, the film thickness was 0.
A 78 μm polyimide coating was obtained. Cut this film into the substrate with an NT cutter knife to a size of 2111 squares9. Transparent adhesive tape on its surface (Sumitomo 3M's product name: Uvia)
When the adhesion to the p-substrate was examined by gluing them together and peeling off the tape, all 100 substrates were peeled off from the substrate. On the other hand, an O polyimide film having a thickness of 0.82 μm was formed on a glass substrate using the same method as above from the polyamic acid solution containing the black dye obtained in Example 1, and the adhesion to the substrate was examined in the same manner as above.
基板目の数100個に対し37個がはがれたにすぎなか
った。Only 37 out of 100 pieces of the board were peeled off.
本発明によれば、基板との接着性が良好なポリイミド膜
の前駆体となるポリアミド酸組成物を提供することがで
き、又、簡易な方法で形成することができ、光遮蔽性の
高い光遮蔽膜の前駆体となるポリアミド酸組成物を提供
することができる。According to the present invention, it is possible to provide a polyamic acid composition that serves as a precursor for a polyimide film that has good adhesion to a substrate, can be formed by a simple method, and has a high light-shielding property. A polyamic acid composition that is a precursor of a shielding film can be provided.
第1図および第2図は本発明により得られる光遮蔽ポリ
アミド酸組成物を加熱処理することにより得られる光遮
蔽ポリイミド組成物の分光透過特性を説明するための図
である。
代理人 弁理士 則 近 憲 佑
同 竹 花 喜久男
彼長(υ旬
第 1 図FIGS. 1 and 2 are diagrams for explaining the spectral transmission characteristics of a light-shielding polyimide composition obtained by heat-treating a light-shielding polyamic acid composition obtained according to the present invention. Agent Patent Attorney Noriyuki Ken Yudo Takehana Kikuo Kanaga (υShun No. 1)
Claims (4)
するポリアミド酸組成物。(1) A polyamic acid composition containing a polyamic acid and a light absorber.
特徴とする特許請求の範囲第1項記載のポリアミド酸組
成物。(2) The polyamic acid composition according to claim 1, wherein the light absorbing agent is 1 to 200 parts by weight of a black dye based on 100 parts by weight of the polyamic acid.
ことを特徴とする特許請求の範囲第1項記載のポリアミ
ド酸組成物、(3) The polyamic acid composition according to claim 1, wherein the light absorber is an infrared absorber in an amount of 0.1 to 50 parts by weight based on 100 parts by weight of the polyamic acid.
収剤0.1〜50重量部であることを特徴とする特許請
求の範囲第1項、第2項又は第3項記載のポリアミド酸
組成物。(4) The light absorbing agent is 1 to 200 parts by weight of a black dye and 0.1 to 50 parts by weight of an infrared absorber, based on 100 parts by weight of polyamic acid. The polyamic acid composition according to item 2 or 3.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2393286A JPS62184055A (en) | 1986-02-07 | 1986-02-07 | Polyamic acid composition |
EP87101669A EP0231953A3 (en) | 1986-02-07 | 1987-02-06 | Light-absorbing resins for display device, display devices using the resin and method of manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2393286A JPS62184055A (en) | 1986-02-07 | 1986-02-07 | Polyamic acid composition |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS62184055A true JPS62184055A (en) | 1987-08-12 |
Family
ID=12124300
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2393286A Pending JPS62184055A (en) | 1986-02-07 | 1986-02-07 | Polyamic acid composition |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS62184055A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6724459B2 (en) * | 2000-10-25 | 2004-04-20 | Lg. Philips Lcd Co., Ltd. | Reflective liquid crystal display device having cholesteric liquid crystal color filter and method of fabricating the same |
JP2017119821A (en) * | 2015-12-28 | 2017-07-06 | 宇部興産株式会社 | Polyimide material and method for producing the same |
-
1986
- 1986-02-07 JP JP2393286A patent/JPS62184055A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6724459B2 (en) * | 2000-10-25 | 2004-04-20 | Lg. Philips Lcd Co., Ltd. | Reflective liquid crystal display device having cholesteric liquid crystal color filter and method of fabricating the same |
JP2017119821A (en) * | 2015-12-28 | 2017-07-06 | 宇部興産株式会社 | Polyimide material and method for producing the same |
KR20180098366A (en) | 2015-12-28 | 2018-09-03 | 우베 고산 가부시키가이샤 | Polyimide material, process for its preparation and polyimide precursor composition |
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