JPS6217818B2 - - Google Patents
Info
- Publication number
- JPS6217818B2 JPS6217818B2 JP54171061A JP17106179A JPS6217818B2 JP S6217818 B2 JPS6217818 B2 JP S6217818B2 JP 54171061 A JP54171061 A JP 54171061A JP 17106179 A JP17106179 A JP 17106179A JP S6217818 B2 JPS6217818 B2 JP S6217818B2
- Authority
- JP
- Japan
- Prior art keywords
- plating
- contact
- magnetic bodies
- reed switch
- plated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000007747 plating Methods 0.000 claims description 32
- 235000014676 Phragmites communis Nutrition 0.000 claims description 18
- 239000007788 liquid Substances 0.000 claims description 7
- 239000011521 glass Substances 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 239000010948 rhodium Substances 0.000 description 17
- 239000000696 magnetic material Substances 0.000 description 15
- 239000010931 gold Substances 0.000 description 5
- 238000002844 melting Methods 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 229910000510 noble metal Inorganic materials 0.000 description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000002775 capsule Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 235000011007 phosphoric acid Nutrition 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical compound N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 description 1
- 244000089486 Phragmites australis subsp australis Species 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 150000003283 rhodium Chemical class 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- KTEDZFORYFITAF-UHFFFAOYSA-K rhodium(3+);trihydroxide Chemical compound [OH-].[OH-].[OH-].[Rh+3] KTEDZFORYFITAF-UHFFFAOYSA-K 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Manufacture Of Switches (AREA)
- Contacts (AREA)
Description
【発明の詳細な説明】
本発明はリードスイツチの製造方法に係り、特
にリードの接触部におけるメツキ処理方法に関す
る。一対の磁性体で作られたリードを、先端部を
一定の間隔で対向させてガラス管の中に不活性ガ
スと共に封入したものをリードスイツチと称し、
このリードスイツチをコイル中に挿入したもの
も、リード継電器と称する。コイルに電流が流れ
れば、リードスイツチ中の磁性体は吸引し合つて
接点を閉じる。磁性体のリードの先端は金
（Au）、ロジウム（Rh）等の貴金属でメツキ処理
されており、低接触抵抗の接点となつている。第
１図に従来のリードスイツチを示す。図において
１は磁性体、２はRhの接点メツキ部、３はガラ
ス管である。ところで第１図のRh接点メツキ部
はスイツチの接触しないもう一方の面にもメツキ
されている。この接触しないもう一方の面にメツ
キされているRhはリードスイツチの構成要素と
しては不要である。磁性体のリードの先端の貴金
属メツキ処理は従来第２図の如き方法で行なわれ
た。貴金属としてRhをメツキする場合には、溶
解性のロジウム塩にカセイアルカリを加えて水酸
化ロジウムRh（OH）3とし、これに正リン酸
（１：１）或は硫酸（１：１）を加えたリン酸系
或は硫酸系のRhメツキ液、貴金属としてAuをメ
ツキする場合は、シアン系のAuメツキ液５の入
つたメツキ槽６中の不溶性の陽極電極４及びメツ
キ槽中につるした磁性体１を陰極にしてこれらを
直流電源７に接続して電圧1.5〜2V、電流密度１
〜10A／ｄm2で電流を通じメツキを行なう。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of manufacturing a reed switch, and more particularly to a method of plating the contact portion of a reed. A reed switch is a pair of reeds made of magnetic material, their tips facing each other at a fixed distance, and sealed together with an inert gas in a glass tube.
A device in which this reed switch is inserted into a coil is also called a reed relay. When current flows through the coil, the magnetic materials in the reed switch attract each other and close the contacts. The tips of the magnetic leads are plated with precious metals such as gold (Au) and rhodium (Rh), creating contacts with low contact resistance. FIG. 1 shows a conventional reed switch. In the figure, 1 is a magnetic material, 2 is a Rh contact plated part, and 3 is a glass tube. By the way, the plated part of the Rh contact shown in Figure 1 is also plated on the other side that does not come in contact with the switch. The Rh plated on the other side that does not make contact is unnecessary as a component of the reed switch. The noble metal plating treatment on the tips of magnetic leads has conventionally been carried out by the method shown in FIG. When plating Rh as a noble metal, add caustic alkali to soluble rhodium salt to make rhodium hydroxide Rh(OH) 3 , and add orthophosphoric acid (1:1) or sulfuric acid (1:1) to this. When plating Au as a noble metal, the insoluble anode electrode 4 in the plating tank 6 containing the cyanide-based Au plating solution 5 and the insoluble anode electrode 4 suspended in the plating tank are added. These are connected to the DC power supply 7 with the magnetic material 1 as the cathode, and the voltage is 1.5 to 2V and the current density is 1.
Plating is carried out by passing a current of ~10 A/dm 2 .
従つて磁性体１のメツキ液中につるされた部分
の表面全面にRhがメツキされてしまい高価なRh
がリードスイツチの接点部以外にも消費されると
云う欠点があつた。 Therefore, the entire surface of the part of the magnetic material 1 suspended in the plating liquid is plated with Rh, which is expensive.
The drawback was that the energy was consumed in areas other than the reed switch's contact area.
リードスイツチの接点部のみに部分メツキする
方法として、テフロンテープ、テープ、フオトレ
ジスト等でメツキ不要部分を覆いメツキすること
が考えられる。しかるにメツキ液として前述のよ
うな正リン酸、或は濃硫酸溶液を用いるので、テ
ープ、フオトレジストでは耐触性に問題があり、
またメツキ浴を汚染することが考えられる。耐飾
性の良好なテフロンテープを用いた場合には、メ
ツキ膜を形成し、テープはく離後テープの接着剤
を完全に除去しないとリードをガラス管中に封入
する際ガスとなつてカプセル内にとじ込められ
る。カプセル内に有機化合物等の分解ガスが封入
されると、接点が動作した時、接触抵抗が上が
り、動作が不安定となる。耐電圧特性、耐寿命特
性に悪影響を及ぼす等の特性劣化を生ずる。一
方、小さなリード片のメツキ不要部分を覆つたテ
ープの接着面を完全に除去することは工程上非常
にめんどうであると云う欠点がある。 As a method of partially plating only the contact portion of the reed switch, it is possible to cover and plate the unnecessary portions with Teflon tape, tape, photoresist, etc. However, since the above-mentioned orthophosphoric acid or concentrated sulfuric acid solution is used as the plating solution, there are problems with the contact resistance of tapes and photoresists.
It is also possible that it may contaminate the plating bath. When using Teflon tape, which has good decorative resistance, it forms a plating film, and if the tape adhesive is not completely removed after peeling off the tape, it may turn into gas and enter the capsule when the lead is sealed in the glass tube. It can be locked up. When a decomposed gas such as an organic compound is enclosed in the capsule, when the contact operates, the contact resistance increases and the operation becomes unstable. This causes property deterioration, such as adversely affecting withstand voltage characteristics and life expectancy characteristics. On the other hand, there is a drawback in that it is extremely troublesome in terms of process to completely remove the adhesive surface of the tape that covers the portion of the small lead piece that does not need to be plated.
本発明は上記欠点を除去するもので、二本の磁
性体をその接触部が対向し、接触面がそれぞれ外
側を向くように、該接触面とは反対側の平坦面同
士を接触させた状態で固定し、該固定した磁性体
の先端部のみをメツキ液中に浸漬し、メツキ液中
に電流を流すことにより磁性体の接触面のみにメ
ツキを施した後、固定した二本の磁性体を分離さ
せ、該分離させた磁性体を、メツキした接触面同
士が間隙を有するように向かい合い、前記接触部
とは反対側の端部がそれぞれ露出するようにガラ
ス管中に封入するリードスイツチの製造方法を提
供するものである。 The present invention eliminates the above-mentioned drawbacks, and consists of two magnetic bodies with their contact portions facing each other and their flat surfaces on opposite sides of the contact surfaces facing outward. immerse only the tips of the fixed magnetic bodies in a plating liquid, apply electric current to the plating liquid to plate only the contact surfaces of the magnetic bodies, and then remove the two fixed magnetic bodies. and the separated magnetic material is sealed in a glass tube so that the plated contact surfaces face each other with a gap and the ends opposite to the contact portions are exposed. A manufacturing method is provided.
以下本発明の実施例を詳述する。 Examples of the present invention will be described in detail below.
第３図は本発明のリードスイツチの断面図であ
る。図において同一物質については第１図で説明
した符号と同一符号を用いる。第３図のリードは
磁性体の先端の接点接触面にのみRhをメツキし
た構造となつている。第４図は本発明のリードス
イツチをつくるための磁性体の先端の接点接触面
のみにRhをメツキする方法を示したものであ
る。 FIG. 3 is a sectional view of the reed switch of the present invention. In the figures, the same reference numerals as those explained in FIG. 1 are used for the same substances. The lead in Figure 3 has a structure in which Rh is plated only on the contact surface at the tip of the magnetic material. FIG. 4 shows a method of plating only the contact surface of the tip of the magnetic material with Rh to make the reed switch of the present invention.
磁性体１，１′の接点の裏面側は平坦面として
いるので、鉛−スズ−インジウムからなる融点約
68℃の低融点合金を用いてメツキ浴に浸漬されな
い部分で平坦面どうしを密着固定させる。固定し
た状態でメツキ浴槽６中につるし、その先端の接
点接触面のみをメツキ液中に浸漬し、メツキ浴槽
６中の不溶性の電極４を陽極として、重ね合せ固
定した磁性体１，１′を陰極として直流電源７に
連結し電圧1.5〜2V電流密度１〜10A／ｄm2で電
流を流し磁性体１，１′上にRhメツキ層２を折出
させる。８は固定のための低融点合金である。所
定の膜厚のメツキ層を形成した後電極から取りは
ずし、固定部分の低融点合金を熱湯により溶融除
去して、磁性体の先端の接点接触面のみにRhを
メツキしたリードを得る。なお、磁性体１，１′
を低融点合金で固定する際、１と１′の間に若干
すき間があいた状態となる場合も考えられるが、
すき間の所にメツキされる膜厚はメツキのつきま
わり性が悪いので表面側の数％以下である。 Since the back side of the contacts of the magnetic materials 1 and 1' is a flat surface, the melting point of the lead-tin-indium material is approximately
Using a low melting point alloy of 68℃, the flat surfaces are closely fixed together in the areas that are not immersed in the plating bath. The magnetic bodies 1 and 1' are suspended in a plating bath 6 in a fixed state, and only the contact surface at the tip is immersed in the plating liquid, and the insoluble electrode 4 in the plating bath 6 is used as an anode, and the magnetic bodies 1 and 1' are stacked and fixed. It is connected to a DC power source 7 as a cathode, and a current is applied at a voltage of 1.5 to 2 V and a current density of 1 to 10 A/dm 2 to deposit the Rh plating layer 2 on the magnetic materials 1 and 1'. 8 is a low melting point alloy for fixing. After forming a plating layer of a predetermined thickness, it is removed from the electrode, and the low melting point alloy of the fixed part is melted away with hot water to obtain a lead in which Rh is plated only on the contact surface of the tip of the magnetic material. In addition, magnetic materials 1, 1'
When fixing with a low melting point alloy, there may be a slight gap between 1 and 1'.
The thickness of the film plated in the gaps is a few percent or less of that on the surface side because the plating has poor coverage.
以上の説明から明らかなように、本発明のリー
ドを用いることにより高価な接点材料であるRh
の使用量を減らすことができる。 As is clear from the above explanation, by using the lead of the present invention, Rh, which is an expensive contact material, can be removed.
usage can be reduced.
本実施例では貴金属メツキとしてRhをあげた
がこれに限るものでなく金、銀、白金、パラジウ
ム等の貴金属も同様に用いることができる。 In this embodiment, Rh is used as the noble metal plating, but the present invention is not limited to this, and noble metals such as gold, silver, platinum, and palladium can be similarly used.
第１図は従来のリードスイツチの断面図、第２
図は従来の磁性体先端部にRhをメツキする装置
の断面図、第３図は本発明のリードスイツチの断
面図、第４図は本発明の磁性体先端部にRhをメ
ツキする装置の断面図である。
１，１′：磁性体、２：Rhメツキ層、３：ガラ
ス、４：陽極、５：メツキ液、６：メツキ層、
７：直流電源。
Figure 1 is a sectional view of a conventional reed switch, Figure 2 is a sectional view of a conventional reed switch.
The figure is a sectional view of a conventional device for plating Rh on the tip of a magnetic material, FIG. 3 is a sectional view of the reed switch of the present invention, and FIG. 4 is a cross-sectional view of a device for plating Rh on the tip of a magnetic material of the present invention. It is a diagram. 1, 1': magnetic material, 2: Rh plating layer, 3: glass, 4: anode, 5: plating liquid, 6: plating layer,
7: DC power supply.
Claims (1)
がそれぞれ外側を向くように、該接触面とは反対
側の平坦面同士を接触させた状態で固定し、該固
定した磁性体の先端部のみをメツキ液中に浸漬
し、メツキ液中に電流を流すことにより磁性体の
接触面のみにメツキを施した後、固定した二本の
磁性体を分離させ、該分離させた磁性体を、メツ
キした接触面同士が間隙を有するように向かい合
い、前記接触部とは反対側の端部がそれぞれ露出
するようにガラス管中に封入することを特徴とし
たリードスイツチの製造方法。1 Fix two magnetic bodies with their flat surfaces opposite to each other in contact with each other so that their contact parts face each other and their contact surfaces face outward, and the fixed magnetic bodies After plating only the contact surfaces of the magnetic bodies by immersing only the tips in a plating liquid and passing an electric current through the plating liquid, the two fixed magnetic bodies are separated, and the separated magnetic bodies are separated. A method for producing a reed switch, comprising: encapsulating the reed switch in a glass tube so that the plated contact surfaces face each other with a gap, and the end portions opposite to the contact portions are exposed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17106179A JPS5696433A (en) | 1979-12-28 | 1979-12-28 | Reed switch |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17106179A JPS5696433A (en) | 1979-12-28 | 1979-12-28 | Reed switch |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5696433A JPS5696433A (en) | 1981-08-04 |
| JPS6217818B2 true JPS6217818B2 (en) | 1987-04-20 |
Family
ID=15916332
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17106179A Granted JPS5696433A (en) | 1979-12-28 | 1979-12-28 | Reed switch |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5696433A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5038046A (en) * | 1973-08-10 | 1975-04-09 |
-
1979
- 1979-12-28 JP JP17106179A patent/JPS5696433A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5038046A (en) * | 1973-08-10 | 1975-04-09 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5696433A (en) | 1981-08-04 |
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