JPS62171123A - Projection exposure apparatus - Google Patents
Projection exposure apparatusInfo
- Publication number
- JPS62171123A JPS62171123A JP61012174A JP1217486A JPS62171123A JP S62171123 A JPS62171123 A JP S62171123A JP 61012174 A JP61012174 A JP 61012174A JP 1217486 A JP1217486 A JP 1217486A JP S62171123 A JPS62171123 A JP S62171123A
- Authority
- JP
- Japan
- Prior art keywords
- optical system
- value
- aperture
- illumination optical
- projection optical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000003287 optical effect Effects 0.000 claims abstract description 75
- 238000005286 illumination Methods 0.000 claims abstract description 29
- 238000001514 detection method Methods 0.000 abstract description 5
- 230000015654 memory Effects 0.000 abstract description 5
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
- 230000004075 alteration Effects 0.000 abstract 1
- 238000003384 imaging method Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 241000257465 Echinoidea Species 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000013256 coordination polymer Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/7025—Size or form of projection system aperture, e.g. aperture stops, diaphragms or pupil obscuration; Control thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は、投影光学系の開口数の変更、つまり焦点深度
の変更が可能な投影露光装置に関し、特に焦点深度変更
の際の結像性能に及ぼす悪影響を最小限に抑えることが
可能な投影露光装置に関す名。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a projection exposure apparatus capable of changing the numerical aperture of a projection optical system, that is, changing the depth of focus. A name related to a projection exposure device that can be controlled.
［従来の技術の説明］
近年半導体素子の微細化と高集積化の進歩はめざましく
、現在既に２５６Ｋから１Ｍビットが実用化されており
、近い将来には４Ｍビットのメモリが実用化されること
も見込まれている。これに伴ない、半導体焼付装置には
、０．８μｍ以下の微細パターンを焼付可能な解像性能
と、複数工程に渡る各パターンを正確に合わせることが
可能なアライメント性能と、高いウニへの焼付処理を可
能とするスルーブツト性能が要求されており、これに応
えるべく各種方式のステッパ（ステップ アンド リピ
ート型投影露光装置）が提供されている。[Description of conventional technology] In recent years, advances in the miniaturization and high integration of semiconductor devices have been remarkable, and 256K to 1M bit memories are already in practical use, and 4M bit memories may be put into practical use in the near future. It is expected. Along with this, semiconductor printing equipment has resolution performance that can print fine patterns of 0.8 μm or less, alignment performance that can accurately match each pattern over multiple processes, and a high level of printing on sea urchins. Throughput performance that enables processing is required, and various types of steppers (step-and-repeat projection exposure apparatus) are provided to meet this demand.
ステッパに搭載する投影光学系について、焼付波長を限
定した場合、一般的に投影光学系の開口数（ＮＡ）を大
きくすると、微細な線巾を焼付けるための限界解像力は
良くなるが焦点深度は浅くなり、逆に開口数（ＮＡ）を
小さくすると、限界解像力は悪くなるが焦点深度は深く
なることが知られている。When the printing wavelength is limited for the projection optical system installed in the stepper, generally speaking, increasing the numerical aperture (NA) of the projection optical system improves the critical resolution for printing fine line widths, but the depth of focus will decrease. It is known that if the numerical aperture (NA) is made shallower, and conversely the numerical aperture (NA) is made smaller, the limiting resolution becomes worse but the depth of focus becomes deeper.
従来のステッパでは、開口数（ＮＡ）の大きい投影光学
系を搭載することにより高い解像力を実現していたが、
開口数（ＮＡ）を決める投影光学系内の絞りは固定絞り
であったため開口数（ＮＡ）は一定値で変えることがで
きなかった。Conventional steppers achieve high resolution by being equipped with a projection optical system with a large numerical aperture (NA).
Since the aperture in the projection optical system that determines the numerical aperture (NA) is a fixed aperture, the numerical aperture (NA) cannot be changed at a constant value.
このため焦点深度は開口数（ＮＡ）が大きいだけ浅いと
いう欠点があり、各種工程の中で比較的太い線幅のパタ
ーンを焼付ける場合でも、高い開口数（ＮＡ）で焼付け
なければならないという欠点があった。For this reason, the depth of focus is shallow as the numerical aperture (NA) is large, and even when printing patterns with relatively thick line widths in various processes, it is necessary to print with a high numerical aperture (NA). was there.
そこで、本発明者等は、上記欠点を解消するため、投影
光学系の開口数（ＮＡ）を可変とすることを検討した。Therefore, the present inventors have considered making the numerical aperture (NA) of the projection optical system variable in order to eliminate the above-mentioned drawbacks.
しかし、従来のステッパにおいて投影光学系の開口数（
ＮＡ）のみを単独で変更した場合、像のコントラストが
悪くなったり、像が歪む等、光学性能が影響されるとい
う問題があった。However, in conventional steppers, the numerical aperture of the projection optical system (
When changing only NA) alone, there was a problem that optical performance was affected, such as poor image contrast or image distortion.
［発明の目的コ
本発明の目的は、上述の従来形における問題点に鑑み、
投影露光装置において、焦点深度の変更を可能とし、か
つ焦点深度を変更した際の光学性能の劣化を最小限に抑
えることにある。また、像コントラスト等の結像特性の
微妙な調節を可能とすることをさらなる目的とする。[Object of the Invention] The object of the present invention is to solve the problems in the conventional form described above,
An object of the present invention is to enable changing the depth of focus in a projection exposure apparatus and to minimize deterioration of optical performance when changing the depth of focus. A further object of the present invention is to enable delicate adjustment of imaging characteristics such as image contrast.
［発明の構成および作用の説明コ
上記目的を達成するため本発明では、投影露光装置にお
いて、従来、投影光学系および照明光学系に組込まれて
いた固定絞りをそれぞれ可変の絞りに変えたことを特徴
とする。[Description of structure and operation of the invention] In order to achieve the above object, the present invention provides a projection exposure apparatus in which the fixed apertures conventionally incorporated in the projection optical system and the illumination optical system are replaced with variable apertures. Features.
また、本発明の一実施態様においては、これら投影光学
系と照明光学系の絞りを無段階の可変絞りとし、これら
の絞りを、照明光学系の開口数（ＮＡ）すなわち有効光
源の大きさと投影光学系の開口数（ＮＡ）との比を一定
値または所定の関係とすべく連動して勅かす。Furthermore, in one embodiment of the present invention, the apertures of the projection optical system and the illumination optical system are steplessly variable apertures, and these apertures are set by adjusting the numerical aperture (NA) of the illumination optical system, that is, the size of the effective light source and the projection optical system. The ratio with the numerical aperture (NA) of the optical system is adjusted to a constant value or a predetermined relationship.
このように投影光学系の開口数（ＮＡ）を変えた場合、
投影光学系の開口数（ＮＡ）と照明光学系の開口数（Ｎ
Ａ）との比すなわちσを一定に保つことが可能になる。When changing the numerical aperture (NA) of the projection optical system in this way,
The numerical aperture (NA) of the projection optical system and the numerical aperture (N
A), that is, σ, can be kept constant.
すなわち、
て定義されるσが小さいと、限界解像力は良くなるか像
の２次元形状が変形して忠実に再現しなくなり、また、
σが大きいと、像は忠実に再現するかコントラストが悪
くなるというように、０は結像（生能に大きな関わりを
持っている。In other words, if σ defined as
If σ is large, the image will either be faithfully reproduced or the contrast will be poor, so 0 has a large impact on image formation (quality).
従って、投影光学系の開口数（ＮＡ）を変え、かつこれ
に連動して照明光学系の開口数（ＮＡ）も変えてＯを一
定に保たせることは、投影光学系の開口数（ＮＡ）を変
えた分だけ限界解像力と焦点深度が変わるだけであり、
他の結像性能を変えることがなく、各種の焼付工程の中
で限界解像力を重視したい工程と、限界解像力よりも焦
点深度を重視したい工程とで、投影光学系の開口数（Ｎ
Ａ）を切換えることによって選択することか可能となる
。Therefore, changing the numerical aperture (NA) of the projection optical system and changing the numerical aperture (NA) of the illumination optical system in conjunction with this to keep O constant means that the numerical aperture (NA) of the projection optical system The only thing that changes is the limit resolution and depth of focus by the amount that changes.
The numerical aperture of the projection optical system (N
It is possible to select by switching A).
［実施例の説明］
第１図は、本発明を適用した半導体焼付露光装置の概略
図である。同図において、１はフォトマスク、２（士ウ
ェハである。３はフォトマスク１のパターンをウェハ２
上に縮少投影する投影光学系で、内部に開口数（ＮＡ）
を変えることか可能な可変絞りを有している。５はフォ
トマスク１に焼付光を投影するための照明光学系で、内
部に開口数（ＮＡ）を変えることか可能な可変絞りを有
している。６はウェハ２のステップアンドリピート動作
を行うＸ−Ｙステージである。７は装置を；ｈ制御する
のに必要なパラメータおよびコマンドを：１ｉｌＪ御す
るコンソール、８は装置上の各ユニットのインタフェイ
ス回路を収納している制御ボックス、９は照明光学系５
内および投影光学系３内の各絞り機構の制御および絞り
値の表示を行うための絞り制御部である。[Description of Embodiments] FIG. 1 is a schematic diagram of a semiconductor printing exposure apparatus to which the present invention is applied. In the same figure, 1 is a photomask, 2 is a wafer. 3 is a pattern of photomask 1 on wafer 2.
Projection optical system that reduces projection upwards and has a numerical aperture (NA) inside.
It has a variable aperture that allows you to change the iris. Reference numeral 5 denotes an illumination optical system for projecting printing light onto the photomask 1, which includes a variable aperture that can change the numerical aperture (NA). Reference numeral 6 denotes an XY stage that performs a step-and-repeat operation on the wafer 2. 7 is a console that controls the parameters and commands necessary to control the device; 8 is a control box that houses the interface circuits of each unit on the device; 9 is an illumination optical system 5
This is an aperture control section for controlling each aperture mechanism in the projection optical system 3 and the projection optical system 3 and displaying an aperture value.
第２図は、第１図の装置における絞り機構および絞り制
御部を示す。同図の投影光学系３において、３１は絞り
羽根、３２は絞り羽根を動かすアクチェータ、３３は絞
り駆動量の検知センサである。また、照明光学系５にお
いて、５１は絞り羽根、５２は絞り羽根５１を勅かすた
めのアクチェータ、５３は絞り駆動量の検知センサであ
る。FIG. 2 shows the aperture mechanism and aperture control section in the apparatus of FIG. In the projection optical system 3 shown in the figure, 31 is an aperture blade, 32 is an actuator that moves the aperture blade, and 33 is a sensor for detecting the amount of aperture drive. In the illumination optical system 5, 51 is an aperture blade, 52 is an actuator for moving the aperture blade 51, and 53 is a sensor for detecting the amount of aperture drive.
次に、第１図の装置における操作および動作を説明する
。Next, the operation and operation of the apparatus shown in FIG. 1 will be explained.
この装置の動作モードとしては、照明光学系５および投
影光学系３の各絞りをコンソール部７で制御するリモー
トモードと、絞り制御部９だけで制御するローカルモー
ドとが用意されている。As operating modes of this apparatus, there are a remote mode in which each aperture of the illumination optical system 5 and projection optical system 3 is controlled by the console section 7, and a local mode in which the apertures are controlled only by the aperture control section 9.
第１のリモートモードの場合、オペレータは、絞り制御
部９上にあるローカル・リモート切換スイッチ９１をリ
モート側に切換え、コンソール７の入力キーボード７１
により必要なＮＡ値をキーインする。これにより、装置
においては、ＮＡ値がコンソール７のメモリ７２に格納
されるとともに、ＣＲＴ７３上で表示される。次にメモ
リ７３に格納されたＮＡ値は制御ボックス８に送信され
、制御ボックス８内の本体制御ＣＰＵ８１によってＮＡ
値に対応した絞り機構駆動の指令電圧に変換されて出力
される。指令電圧は照明光学系５および投影光学系３の
絞り機構をドライブする各々の駆動回路５４および３４
に入力され、アクチェータ５２および３２をドライブす
る。アクチェータ５２．３２としてはＤＣモータおよび
パルスモータ等を用いることができる。絞りの駆動量の
検知用として、照明光学系５および投影光学系３のそれ
ぞれに検知センサ５３および３３が配置されており、こ
れによって実際の駆動量が駆動回路５４および３４にフ
ィードバックされ、所定の位置に絞りが位置決めされる
。検知セレサ出力は、表示処理回路９２に指令値ととも
に入力されておりエラー検出が行なわれる。絞り制御部
９の表示部９３にはＮＡ値とともにエラー有無の表示が
なされる。また、これらのＮＡ値とエラー有無のデータ
を表示処理回路９２から制御ボックス８の本体制御ＣＰ
Ｕ８１を通してコンソール７に送信し、ＣＲＴ７３にも
表示させるようにすることも可能である。In the case of the first remote mode, the operator switches the local/remote changeover switch 91 on the aperture control section 9 to the remote side, and then presses the input keyboard 71 on the console 7.
Key in the necessary NA value. As a result, in the apparatus, the NA value is stored in the memory 72 of the console 7 and displayed on the CRT 73. Next, the NA value stored in the memory 73 is sent to the control box 8, and the NA value is
It is converted into a command voltage for driving the aperture mechanism corresponding to the value and output. The command voltage is applied to each drive circuit 54 and 34 that drives the aperture mechanism of the illumination optical system 5 and the projection optical system 3.
is input to drive actuators 52 and 32. A DC motor, a pulse motor, etc. can be used as the actuator 52.32. Detection sensors 53 and 33 are arranged in each of the illumination optical system 5 and the projection optical system 3 to detect the amount of drive of the diaphragm, and the actual amount of drive is fed back to the drive circuits 54 and 34 to detect a predetermined value. The aperture is positioned at the position. The detected ceresor output is input together with the command value to the display processing circuit 92, and error detection is performed. The display unit 93 of the aperture control unit 9 displays the NA value and the presence or absence of an error. In addition, these NA values and data on the presence or absence of errors are sent from the display processing circuit 92 to the main body control CP of the control box 8.
It is also possible to transmit it to the console 7 through the U81 and display it on the CRT 73 as well.
以上の動作により、照明光学系５内の絞りと、投影光学
系３内の絞りを連動させて所望の位置に設定することが
できる。Through the above operations, the aperture in the illumination optical system 5 and the aperture in the projection optical system 3 can be set at desired positions in conjunction with each other.
なお、この装置において、入力キーボート７１からは、
照明光学系５のＮＡ値、投影光学系３のＮＡ値および前
記σ（＝照明光学系のＮＡ／投影光学系のＮＡ）の値の
うち２つを人力する。あるいは、焦点深度データのみを
入力するようにし、このデータを装置内の例えばコンソ
ールＣＰＵ７４で投影光学系のＮＡ値に換算し、さらに
この換算値と予め装置内のメモリ例えばメモリ７２に記
ｆ、αさせであるσ値とから開明光学系５のＮＡ値を算
出するようにしてもよい。In addition, in this device, from the input keyboard 71,
Two of the NA value of the illumination optical system 5, the NA value of the projection optical system 3, and the value of σ (=NA of the illumination optical system/NA of the projection optical system) are manually determined. Alternatively, only the depth of focus data is input, and this data is converted into the NA value of the projection optical system by, for example, the console CPU 74 in the apparatus, and the converted value and f, α The NA value of the optical system 5 may be calculated from the σ value.
第２の、ステッパ本体上の佼つ制御部９たけて制御する
ローカルモートの場合、オペレータは、絞り制御部９上
にあるローカル・リモート切換スイッチ９１をローカル
側に切換え、駆動量設定部より必要なＮＡ値を設定する
。入力手段としては、可変抵抗器やディジタルスイッチ
等の可変設定可能なものを用いる。設定されたＮＡ値は
駆動量設定部９４において、ＮＡ値に対応した絞り機構
駆動指令電圧に変換されて出力され前記第１のモート時
と同様に照明光学系内の絞りと、投影光学系内の絞りを
連動させて所望の位置に設定することができる。In the case of the second local motor, which is controlled by the control unit 9 on the stepper main body, the operator switches the local/remote selector switch 91 on the aperture control unit 9 to the local side, and selects the drive amount setting unit as required. Set the appropriate NA value. As the input means, a variable resistor, digital switch, or other variable setting device is used. The set NA value is converted into an aperture mechanism drive command voltage corresponding to the NA value in the drive amount setting section 94 and output, and is applied to the aperture in the illumination optical system and the aperture in the projection optical system as in the first mote. The aperture can be linked to set the desired position.
この実施例によれば、投影光学系と照明光学系の両者の
絞り径を任意の組合せて可変制御することも可能なので
、σ＝＝照明光学系ＮＡ／投影レンズのＮＡで定義され
ているσの値を可変にすることも可能になる。このこと
により焼付パターンにより必要な場合σ値を変えて像コ
ントラスト等微妙な結像性能を得ることも可能となる。According to this embodiment, it is possible to variably control the aperture diameters of both the projection optical system and the illumination optical system in any combination, so that σ is defined as σ==Illumination optical system NA/projection lens NA. It is also possible to make the value variable. This makes it possible to obtain delicate imaging performance such as image contrast by changing the σ value if necessary depending on the printing pattern.
［発明の効果］
以上のように本発明によると、照明光学系と投影光学系
の双方の絞りを可変とし、これらの光学系それぞれの開
口数を所望に応じて変更するようにしているため、例え
ば所望の焦点深度（投影光学系の開口数）に対して照明
光学系の開口数と投影光学系の開口数との比（０）が一
定となるように照明光学系の開口数を制御すれば、像コ
ントラストやディストーション等の結像性能に悪影響を
及ぼすことなく、工程に応じた任意の焦点深度を設定す
ることができる。また、σ値を変えることにより像コン
トラスト等の結像性能を微妙に変化させることも可能で
ある。[Effects of the Invention] As described above, according to the present invention, the apertures of both the illumination optical system and the projection optical system are made variable, and the numerical aperture of each of these optical systems is changed as desired. For example, the numerical aperture of the illumination optical system should be controlled so that the ratio (0) between the numerical aperture of the illumination optical system and the numerical aperture of the projection optical system is constant for a desired depth of focus (numerical aperture of the projection optical system). For example, an arbitrary depth of focus can be set according to the process without adversely affecting imaging performance such as image contrast and distortion. Furthermore, by changing the σ value, it is also possible to subtly change imaging performance such as image contrast.
第１図は本発明の１実施例に係るステッパの外観図、第
２図は第１図の装置の絞り機構および絞り制御部の概略
構成図である。
１：フォトマスク、２：ウェハ、３：投影光学系、５：
照明光学系、６ ： Ｘ−Ｙステージ、７：コンソール
、８：制御ボックス、９：絞り制御部、３１：投影光学
系絞り羽根、３２ニアクチエータ、３３：検知センサ、
３４：駆動回路、５１：照明光学系絞り羽根、５２；ア
クチェータ、５３：検知センサ、５４：駆動回路。FIG. 1 is an external view of a stepper according to an embodiment of the present invention, and FIG. 2 is a schematic diagram of the aperture mechanism and aperture control section of the apparatus shown in FIG. 1: Photomask, 2: Wafer, 3: Projection optical system, 5:
Illumination optical system, 6: X-Y stage, 7: console, 8: control box, 9: aperture control section, 31: projection optical system aperture blade, 32 near actuator, 33: detection sensor,
34: Drive circuit, 51: Illumination optical system aperture blade, 52: Actuator, 53: Detection sensor, 54: Drive circuit.
Claims (1)
有効光源の大きさを可変する第１の絞りと、上記原版の
パターン像を被露光体上に投影する投影光学系と、この
投影光学系の開口数を可変する第２の絞りと、これら第
１および第２の絞りを制御する制御手段とを具備するこ
とを特徴とする投影露光装置。 ２、前記制御手段が、前記照明光学系の有効光源の大き
さと前記投影光学系の開口数との比を一定値とすべく前
記第１および第２の絞りを制御する特許請求の範囲第１
項記載の投影露光装置。 ３、前記制御手段が、前記照明光学系の有効光源の大き
さと前記投影光学系の開口数との比を一定値以外の所定
の関係とすべく前記第１および第２の絞りを制御する特
許請求の範囲第１項記載の投影露光装置。 ４、前記制御手段が、前記第１および第２の絞りの径を
検出する検出器を有し、両者の絞り径を無段階に可変制
御する特許請求の範囲第１〜３項のいずれか１つに記載
の投影露光装置。[Claims] 1. An illumination optical system that illuminates the original, a first aperture that changes the size of the effective light source of this illumination optical system, and a pattern image of the original that is projected onto the object to be exposed. A projection exposure apparatus comprising: a projection optical system; a second aperture for varying the numerical aperture of the projection optical system; and a control means for controlling the first and second apertures. 2. Claim 1, wherein the control means controls the first and second apertures to maintain a constant ratio between the size of the effective light source of the illumination optical system and the numerical aperture of the projection optical system.
Projection exposure apparatus described in Section 1. 3. A patent in which the control means controls the first and second apertures so that the ratio between the size of the effective light source of the illumination optical system and the numerical aperture of the projection optical system is in a predetermined relationship other than a constant value. A projection exposure apparatus according to claim 1. 4. Any one of claims 1 to 3, wherein the control means includes a detector for detecting the diameters of the first and second apertures, and continuously variable control of the diameters of both apertures. The projection exposure apparatus described in .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61012174A JPH0618165B2 (en) | 1986-01-24 | 1986-01-24 | Exposure method, element manufacturing method and exposure apparatus using the method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61012174A JPH0618165B2 (en) | 1986-01-24 | 1986-01-24 | Exposure method, element manufacturing method and exposure apparatus using the method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62171123A true JPS62171123A (en) | 1987-07-28 |
| JPH0618165B2 JPH0618165B2 (en) | 1994-03-09 |
Family
ID=11798062
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61012174A Expired - Lifetime JPH0618165B2 (en) | 1986-01-24 | 1986-01-24 | Exposure method, element manufacturing method and exposure apparatus using the method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0618165B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001168027A (en) * | 1999-11-05 | 2001-06-22 | Asm Lithography Bv | Lithography device |
| JP2013156451A (en) * | 2012-01-30 | 2013-08-15 | Fujitsu Semiconductor Ltd | Exposure method |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102016216917A1 (en) * | 2016-09-07 | 2018-03-08 | Carl Zeiss Smt Gmbh | Optical system, in particular lithography system, and method |
-
1986
- 1986-01-24 JP JP61012174A patent/JPH0618165B2/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001168027A (en) * | 1999-11-05 | 2001-06-22 | Asm Lithography Bv | Lithography device |
| JP2013156451A (en) * | 2012-01-30 | 2013-08-15 | Fujitsu Semiconductor Ltd | Exposure method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0618165B2 (en) | 1994-03-09 |
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| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |