JPS62170967A - Electrophotographic sensitive body - Google Patents
Electrophotographic sensitive bodyInfo
- Publication number
- JPS62170967A JPS62170967A JP1291786A JP1291786A JPS62170967A JP S62170967 A JPS62170967 A JP S62170967A JP 1291786 A JP1291786 A JP 1291786A JP 1291786 A JP1291786 A JP 1291786A JP S62170967 A JPS62170967 A JP S62170967A
- Authority
- JP
- Japan
- Prior art keywords
- zno
- layer
- zinc oxide
- potential
- electrophotographic sensitive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 239000013078 crystal Substances 0.000 claims abstract description 10
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 46
- 239000011787 zinc oxide Substances 0.000 claims description 22
- 108091008695 photoreceptors Proteins 0.000 claims description 20
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 239000010949 copper Substances 0.000 claims 1
- 229910052744 lithium Inorganic materials 0.000 claims 1
- 230000010287 polarization Effects 0.000 abstract description 7
- 150000002500 ions Chemical class 0.000 abstract description 6
- 238000004544 sputter deposition Methods 0.000 abstract description 5
- 230000035945 sensitivity Effects 0.000 abstract description 3
- 229910052984 zinc sulfide Inorganic materials 0.000 abstract 1
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000012407 engineering method Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 1
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 1
- 101100083854 Mus musculus Pou2f3 gene Proteins 0.000 description 1
- 102100026466 POU domain, class 2, transcription factor 3 Human genes 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- PTFCDOFLOPIGGS-UHFFFAOYSA-N Zinc dication Chemical compound [Zn+2] PTFCDOFLOPIGGS-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229910001431 copper ion Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- -1 gallium ions Chemical class 0.000 description 1
- 229910001416 lithium ion Inorganic materials 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photoreceptors In Electrophotography (AREA)
Abstract
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明は酸化亜鉛を主成分とする電子写真感光体に関す
る。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to an electrophotographic photoreceptor containing zinc oxide as a main component.
(従来技術およびその問題点)
電子写真感光体として現在一般にアモルファスノリコン
(以下、a −S iと云う。)が用いられている。a
−S iは従来用いられていたアモルファスセレンま
たはその化合物より高感度で、無害であり、しかも長寿
命であるという点から盛んに用いられている。(Prior Art and its Problems) Amorphous Noricon (hereinafter referred to as a-Si) is generally used as an electrophotographic photoreceptor. a
-S i is widely used because it has higher sensitivity, is harmless, and has a longer life than conventionally used amorphous selenium or its compounds.
しかしながら、a−Siは成膜速度が遅く、原料ガスが
高価であり、かつa−Siの収率が低いことから非常に
高価であり、広く一般的電子写真に適用されるには問題
がある。However, a-Si is very expensive due to its slow film formation rate, expensive raw material gases, and low yield of a-Si, and there are problems in its widespread application to general electrophotography. .
また、最近有機半導体系の感光体も注目されているが、
寿命の点でまだa −S iには及ばない。以前には酸
化亜鉛を用いた例もあるが、必ずしも十分な感光体特性
が得られていない。Recently, organic semiconductor photoreceptors have also been attracting attention.
It is still not as good as a-S i in terms of lifespan. Although zinc oxide has been used in the past, sufficient photoreceptor characteristics have not always been obtained.
(発明の目的)
本発明は優れた特性を何する電子写真感光体を得ること
を目的とする。(Objective of the Invention) The object of the present invention is to obtain an electrophotographic photoreceptor having excellent characteristics.
(発明の内容)
即ち、本発明は導電性基体上にヴルツ構造の柱状結晶を
有する酸化亜鉛を結晶のC軸を基体に対して垂直に成長
させた感光体層を有する電子写真感光体を提供する。(Contents of the Invention) That is, the present invention provides an electrophotographic photoreceptor having a photoreceptor layer in which zinc oxide having columnar crystals with a Wurz structure is grown on a conductive substrate with the C axis of the crystal perpendicular to the substrate. do.
本発明では酸化亜鉛を用いろ。酸化亜鉛は前述の如く実
はかつて広く電子写真感光体として用いられており、そ
の材料自体は高い光伝導特性があることか広く知られて
いたが、この場合酸化亜鉛の粉体を有機樹脂中に分散す
ることにより感光体として必要とする!013〜14Ω
ctnの高抵抗を得ていた。しかし酸化亜鉛粉体を有機
樹脂に分散した材料は電気抵抗が高くなると同時に、光
伝導性も小さくなる。また粉体は表面積が大きく表面電
子状態が大幅に増加するので、光伝導特性や感光体特性
に悪影響を与える。即ち、粉体化すること自体、光伝導
特性を劣化させているので必ずしも好ましくないが、帯
電特性を」二げるために止むを得ず粉体化し樹脂とのコ
ンポジット化を行っている。In the present invention, use zinc oxide. As mentioned above, zinc oxide was actually once widely used as an electrophotographic photoreceptor, and the material itself was widely known to have high photoconductive properties.In this case, however, zinc oxide powder was mixed into an organic resin. Needed as a photoreceptor by dispersing it! 013~14Ω
High resistance of ctn was obtained. However, a material in which zinc oxide powder is dispersed in an organic resin has a high electrical resistance and at the same time a low photoconductivity. Further, since the powder has a large surface area and the surface electronic state increases significantly, it has an adverse effect on the photoconductivity properties and the properties of the photoreceptor. That is, although pulverization itself is not necessarily preferable because it deteriorates the photoconductive properties, it is unavoidable to pulverize it and composite it with resin in order to improve the charging properties.
しかし本発明では、酸化亜鉛をコンポジット化すること
なく、むしろ酸化亜鉛のC軸配向する結晶化を行い、C
軸方向に有する分極効果を利用することにより電子写真
に必要な表面帯電電位を容易に持たせろことを特徴とし
ている。However, in the present invention, zinc oxide is not composited, but rather crystallized to align the C-axis of zinc oxide, and C
It is characterized by the ability to easily provide the surface charging potential required for electrophotography by utilizing the polarization effect in the axial direction.
本発明の特定結晶構造の酸化亜鉛層はイオン工学的製法
、例えば、スパッタリング等の方法を用いて形成される
。ZnOをターゲットとするスパッタリングが最も好ま
しい。イオン工学的手法によれば、C軸配向したZnO
の性状結晶が成長し、亜鉛イオンからなる府と酸素から
成る層が交互に積石した形になり、これらの正と負イオ
ンの層の有する電気的分極か積み重なって大きな分極を
C軸方向に示す。
、感光体層の製造時には酸化亜鉛の他に他の元素
のイオン、例えば、リチウムイオン、銅イオン、ガリウ
ムイオンまたはこれらの混合を含むのが好ましい。これ
らの元素のイオンは感光体に必要な高抵抗を得るために
酸化亜鉛中に小量添加される。The zinc oxide layer of the present invention having a specific crystal structure is formed using an ion engineering method such as sputtering. Sputtering using ZnO as a target is most preferred. According to ion engineering methods, C-axis oriented ZnO
As the crystal grows, layers consisting of zinc ions and oxygen are stacked alternately, and the electrical polarization of these positive and negative ion layers stacks up to create a large polarization in the C-axis direction. show.
In addition to zinc oxide, ions of other elements such as lithium ions, copper ions, gallium ions, or a mixture thereof are preferably included during the production of the photoreceptor layer. Ions of these elements are added in small amounts to zinc oxide to obtain the high resistance required for the photoreceptor.
実際に添加される化合物はCuCCが挙げられる。Examples of compounds that are actually added include CuCC.
添加量は酸化亜鉛1.00重量部に対して0.01〜l
O重量部である。The amount added is 0.01 to 1 per 1.00 parts by weight of zinc oxide.
O parts by weight.
基体として用いる導電性基体は金属、例えば、アルミニ
ウムまたは他の樹脂基体、例えば導電性カーボンを配合
した樹脂基体等が挙げられる。The conductive substrate used as the substrate may be a metal, such as aluminum, or another resin substrate, such as a resin substrate blended with conductive carbon.
(発明の効果)
電子写真法では感光体表面に帯電電位を保持さ仕る必要
があり、かつ光の照射によりその表面電位を消失させな
ければならない。この帯電保持に酸化亜鉛のC軸配向に
より生じる分極電位を利用すると同時に酸化亜鉛の有す
る高い光導電性を利用して、比較的薄い膜厚の感光体に
して十分な帯電電位と高い感度を得ることが可能となる
。本発明に用いる材料は無公害であり、かつ安価にどこ
ででも入手可能な材料を用いる。(Effects of the Invention) In electrophotography, it is necessary to maintain a charged potential on the surface of a photoreceptor, and the surface potential must be eliminated by irradiation with light. To maintain this charge, the polarization potential generated by the C-axis orientation of zinc oxide is used, and at the same time, the high photoconductivity of zinc oxide is used to obtain a sufficient charging potential and high sensitivity for a photoreceptor with a relatively thin film thickness. becomes possible. The materials used in the present invention are non-polluting and inexpensive and available anywhere.
本発明を実施例により更に詳細に説明する。The present invention will be explained in more detail with reference to Examples.
(実施例)
実施例!
ZnOにCuCCを03重重%を混入して焼成した。1
Oct11径のターゲットからマグネトロンスパッター
を用い約0.1Torrのアルゴンと酸素の混合比7:
3のスパッターガスを用いてl0cm角の厚さ約()
、 2 mmのアルミニウム板上にZnO:Coの薄膜
を約15μmの厚さに成膜して実験を試みた。(Example) Example! 0.3% by weight of CuCC was mixed into ZnO and fired. 1
Using magnetron sputtering from a target with a diameter of Oct11, the mixing ratio of argon and oxygen at about 0.1 Torr was 7:
Approximately 10cm square thickness () using sputtering gas of 3.
An experiment was conducted by depositing a thin film of ZnO:Co to a thickness of approximately 15 μm on a 2 mm aluminum plate.
この膜をX線により配向を凋ぺたところ、第1図に示さ
れる如きZnOの(002)の回折線か見られることに
より、基板に対して垂直にC軸配向していることか明ら
かに認められた。このZnO薄膜の着いたアルミ仮をア
ルミニウムドラムに張り付けて、+6000Vのコロナ
放電により表面を正帯電を行った直後、その電位を電位
計(TREK365型)に3627型透明プローブを装
置して測定したところ398vを得た。その1秒後の帯
電保持率は約75%と良好であり、それに昼光色蛍光燈
の光量しぼって約2ルクスの強度にフィルターを通して
調節して照射したところ、帯電電位は0.5秒以下で半
減した。また残留電位はIO■以下であった。このこと
より配向性酸化亜鉛薄膜は優れた電子写真感光体として
作動することが明らかである。When this film was oriented with X-rays, the (002) diffraction line of ZnO was observed as shown in Figure 1, which clearly confirmed that the C-axis was oriented perpendicular to the substrate. It was done. Immediately after attaching this temporary aluminum film with the ZnO thin film to an aluminum drum and positively charging the surface with a +6000V corona discharge, the potential was measured using an electrometer (TREK365 model) with a 3627 model transparent probe. I got 398v. The charge retention rate after 1 second was good at about 75%, and when the light intensity of daylight fluorescent light was adjusted to about 2 lux through a filter and irradiated, the charge potential was halved in less than 0.5 seconds. did. Further, the residual potential was below IO■. From this, it is clear that the oriented zinc oxide thin film functions as an excellent electrophotographic photoreceptor.
第を図は実施例1により得られた電子写真感光体のX線
測定図である。The second figure is an X-ray measurement diagram of the electrophotographic photoreceptor obtained in Example 1.
Claims (1)
亜鉛を結晶のC軸を基体に対して垂直に成長させた感光
体層を有する電子写真感光体。 2、感光体層が酸化亜鉛の他に、リチウム、銅およびガ
リウムから成る群から選ばれる元素を含有する第1項記
載の電子写真感光体。[Scope of Claims] 1. An electrophotographic photoreceptor having a photoreceptor layer in which zinc oxide having columnar crystals with a Wurz structure is grown on a conductive substrate with the C-axis of the crystal perpendicular to the substrate. 2. The electrophotographic photoreceptor according to item 1, wherein the photoreceptor layer contains, in addition to zinc oxide, an element selected from the group consisting of lithium, copper, and gallium.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1291786A JPS62170967A (en) | 1986-01-22 | 1986-01-22 | Electrophotographic sensitive body |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1291786A JPS62170967A (en) | 1986-01-22 | 1986-01-22 | Electrophotographic sensitive body |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS62170967A true JPS62170967A (en) | 1987-07-28 |
Family
ID=11818694
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1291786A Pending JPS62170967A (en) | 1986-01-22 | 1986-01-22 | Electrophotographic sensitive body |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS62170967A (en) |
-
1986
- 1986-01-22 JP JP1291786A patent/JPS62170967A/en active Pending
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