JPS62170660U - - Google Patents
Info
- Publication number
- JPS62170660U JPS62170660U JP5740986U JP5740986U JPS62170660U JP S62170660 U JPS62170660 U JP S62170660U JP 5740986 U JP5740986 U JP 5740986U JP 5740986 U JP5740986 U JP 5740986U JP S62170660 U JPS62170660 U JP S62170660U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- laser
- modulation device
- polarizing element
- utility
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 14
- 230000010355 oscillation Effects 0.000 claims 2
- 230000003287 optical effect Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 1
Landscapes
- Exposure Or Original Feeding In Electrophotography (AREA)
Description
第１図は本考案の一実施例の概略ブロツク図、
第２図は半導体レーザの電流―光出力特性を示す
グラフである。
１…半導体レーザ、４…偏光素子、７…半導体
レーザ駆動回路。
FIG. 1 is a schematic block diagram of an embodiment of the present invention.
FIG. 2 is a graph showing the current-optical output characteristics of a semiconductor laser. 1... Semiconductor laser, 4... Polarizing element, 7... Semiconductor laser drive circuit.
Claims (1)
接変調する半導体レーザ駆動回路を備えた半導体
レーザ変調装置であつて、 前記半導体レーザから出力されるレーザ光の光
路中に、レーザ発振によるレーザ発振光成分を通
過する向きに配置された偏光素子を備えたことを
特徴とする半導体レーザ変調装置。 (2) 前記半導体レーザ駆動回路は、前記半導体
レーザにバイアス電流を流すときには、前記偏光
素子を通過した自然放出光があらかじめ許容され
た光量となるように、該半導体レーザを付勢する
ことを特徴とする前記実用新案登録請求の範囲第
１項記載の半導体レーザ変調装置。[Claims for Utility Model Registration] (1) A semiconductor laser modulation device comprising a semiconductor laser and a semiconductor laser drive circuit that directly modulates the semiconductor laser, wherein a semiconductor laser is provided in the optical path of a laser beam output from the semiconductor laser. 1. A semiconductor laser modulation device comprising: a polarizing element arranged in a direction to pass a laser oscillation light component generated by laser oscillation. (2) The semiconductor laser driving circuit is characterized in that when applying a bias current to the semiconductor laser, the semiconductor laser is energized so that the amount of spontaneously emitted light that has passed through the polarizing element becomes a pre-allowed amount of light. A semiconductor laser modulation device according to claim 1, wherein said utility model registration claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5740986U JPS62170660U (en) | 1986-04-18 | 1986-04-18 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5740986U JPS62170660U (en) | 1986-04-18 | 1986-04-18 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62170660U true JPS62170660U (en) | 1987-10-29 |
Family
ID=30887083
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5740986U Pending JPS62170660U (en) | 1986-04-18 | 1986-04-18 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62170660U (en) |
-
1986
- 1986-04-18 JP JP5740986U patent/JPS62170660U/ja active Pending
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