JPS62170473A - Vapor deposition device using laser - Google Patents

Vapor deposition device using laser

Info

Publication number
JPS62170473A
JPS62170473A JP1106386A JP1106386A JPS62170473A JP S62170473 A JPS62170473 A JP S62170473A JP 1106386 A JP1106386 A JP 1106386A JP 1106386 A JP1106386 A JP 1106386A JP S62170473 A JPS62170473 A JP S62170473A
Authority
JP
Japan
Prior art keywords
laser
irradiated
optical system
vapor deposition
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1106386A
Other languages
Japanese (ja)
Other versions
JPH0244901B2 (en
Inventor
Yukishige Mineta
峰田 進栄
Nobuo Yasunaga
安永 暢男
Akira Obara
明 小原
Masayuki Ikeda
正幸 池田
Kunio Shibuki
渋木 邦夫
Mamoru Kobata
護 木幡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Tungaloy Corp
Original Assignee
Agency of Industrial Science and Technology
Toshiba Tungaloy Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology, Toshiba Tungaloy Co Ltd filed Critical Agency of Industrial Science and Technology
Priority to JP1106386A priority Critical patent/JPH0244901B2/en
Publication of JPS62170473A publication Critical patent/JPS62170473A/en
Publication of JPH0244901B2 publication Critical patent/JPH0244901B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

PURPOSE:To prevent contamination of an optical system regulator by disposing an ion source to a suitable position in a reaction vessel and irradiating the ion beam thereof toward the optical system regulator. CONSTITUTION:The laser light arrives at a concave mirror 5c of the optical system regulator, by which the laser light is converged and changed in the optical path to irradiate a sample 2 to be irradiated. The evaporating material diffused from the sample 2 to be irradiated sticks onto the surface of a substrate 6 and forms a coating layer thereon. The ion beam irradiated from the ion source disposed in the reaction vessel 1 is made to collide against the concave mirror 5c to sputter and remove the evaporating material stuck thereto by which the optical system regulator is cleaned. The deterioration of the laser irradiation efficiency is prevented by the above-mentioned mechanism, by which the working efficiency is improved.

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明は、各種の金属1合金、セラミックスから成る基
板の表面に各種の機能を備えた被覆層を形成した部材、
例えば、切削工具及び耐摩耗工具のような工具部品並び
に半導体素子基板のような電子工業部品、を製造する際
に用いて好適なレーザを用いた蒸着装置に関し、更に詳
しくは、基板への被覆層形成時に後述する光学系調整器
の汚染を防止でき、もって連続作業を可能とすることに
より作業能率を高めることができる構造のレーザを用い
た蒸着装置に関する。
[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a member in which a coating layer with various functions is formed on the surface of a substrate made of various metal alloys and ceramics;
For example, it relates to a vapor deposition apparatus using a laser that is suitable for use in manufacturing tool parts such as cutting tools and wear-resistant tools, and electronic industrial parts such as semiconductor device substrates, and more specifically, it relates to a vapor deposition apparatus using a laser suitable for manufacturing tool parts such as cutting tools and wear-resistant tools, and electronic industry parts such as semiconductor element substrates. The present invention relates to a vapor deposition apparatus that uses a laser and has a structure that can prevent contamination of an optical system adjuster (to be described later) during formation, and thereby enable continuous operation to improve work efficiency.

[従来技術] 一般に、金属1合金、セラミックスから成る基板の表面
に様々な機能を有する被覆層を形成するための蒸着装置
には、大別して、化学蒸着装置(CVD装置)と物理蒸
着装置(PVD装置)がある。
[Prior Art] In general, vapor deposition apparatuses for forming coating layers with various functions on the surfaces of substrates made of metal alloys and ceramics are roughly divided into chemical vapor deposition apparatuses (CVD apparatuses) and physical vapor deposition apparatuses (PVD apparatuses). equipment).

後者の装置を更に分類すると、イオンプレーテインク装
置、スパッタリング装置、真空蒸着装置になるが、この
うちの真空蒸着装置の1種として、被照射試料を加熱法
発させる手段にレーザ光を用いるレーザを用いた蒸着装
置が知られている。
The latter type of equipment can be further classified into ion plate ink equipment, sputtering equipment, and vacuum evaporation equipment. Among these, one type of vacuum evaporation equipment is a laser that uses laser light as a means of heating the irradiated sample. Vapor deposition apparatuses using

従来から多用されているレーザを用いた蒸着装置は、強
力なエネルギー密度に絞りこんだ集束レーザ光を被照射
試料に照射するため、この被照射試料はレーザ光の照射
部分がその他の非照射部分に比べて多量に蒸発して照射
痕となり、連続運転が困難となる。このため、従来のレ
ーザを用いた蒸着装置に適用されているレーザ光は、そ
の照射エネルギーを100W以下に抑制した小出力レー
ザ光が主流である。
Laser-based vapor deposition equipment, which has been widely used in the past, irradiates the irradiated sample with a focused laser beam with a high energy density. A large amount evaporates compared to the previous one, creating irradiation marks, making continuous operation difficult. For this reason, the laser beams used in conventional laser-based vapor deposition apparatuses are mainly low-output laser beams whose irradiation energy is suppressed to 100 W or less.

しかしなから、レーザ光の照射エネルギーが小さい場合
は、被照射試料からの蒸発物の草発量が少なくなり基板
表面に形成される被覆層の成膜速度は小さくなる。また
、基板に形成された被覆層の機械的強度も小さく、基板
との密着性も弱くなるという問題点が指摘されてる。
However, when the irradiation energy of the laser beam is small, the amount of evaporated matter generated from the irradiated sample decreases, and the deposition rate of the coating layer formed on the substrate surface decreases. Furthermore, it has been pointed out that the mechanical strength of the coating layer formed on the substrate is low, and the adhesion to the substrate is also weak.

このような問題点を解決するために、木発明者らは新規
な構造の装置を開発した(特開昭59−116373号
公報参照)。
In order to solve these problems, the inventors of the present invention have developed a device with a new structure (see Japanese Patent Application Laid-open No. 116373/1983).

ここで開示されている装置は、大出力のレーザ光を被照
射試料に照射することを可能にしたもので、具体的には
、リング状に形状加工した被照射試料を真空容器内で軸
回転させ、その接線方向から大出力の集束レーザ光を照
射することを特徴とする。このような態様を採用するこ
とにより、被照射試料から蒸発する蒸発物の活性化は促
進され、この高活性の蒸発物から成る被覆層と基板との
密着性は著しく向上し、更には、蒸発物を回転リング状
の被照射試料から基板に連続的かつ安定して供給するこ
とができる。
The device disclosed here makes it possible to irradiate an irradiated sample with a high-power laser beam. Specifically, the irradiated sample, which has been processed into a ring shape, is rotated around its axis within a vacuum container. The feature is that a high-output focused laser beam is irradiated from the tangential direction of the laser beam. By adopting such an embodiment, the activation of the evaporated substances evaporated from the irradiated sample is promoted, the adhesion between the coating layer made of this highly active evaporated substance and the substrate is significantly improved, and furthermore, the evaporation Objects can be continuously and stably supplied from the rotating ring-shaped irradiated sample to the substrate.

[発明が解決しようとする問題点] しかしながらこの装置の場合、被照射試料を長時間に亘
って蒸発させたときまたは短時間ではあっても断続的に
数回蒸発を反復したとき、反応容器の中、とりわけ容器
の壁面に配設されるレーザ光導入用窓の内側の面または
容器内に導入されたレーザ光を集束するだめの凹面鏡若
しくは放物面鏡のような光学系調整器への蒸発物の付着
が激しくなり、被照射試料へのレーザ照射効率が低下す
るという事態を招いている。
[Problems to be Solved by the Invention] However, in the case of this device, when the irradiated sample is evaporated for a long period of time or when evaporation is repeated several times intermittently, even if it is for a short period of time, the reaction vessel is In particular, evaporation on the inner surface of a window for introducing laser light arranged on the wall of the container or on an optical system adjuster such as a concave mirror or a parabolic mirror used to focus the laser light introduced into the container. This results in a situation where objects become more heavily attached and the efficiency of laser irradiation to the irradiated sample decreases.

そして、反応容器の中、とりわけ光学系調整器に付着し
た蒸発物を除去する場合には、往々にして光学系調整器
の表面に傷がつく。表面損傷を受けた光学系調整器は当
然にもそのレーザ照射効率が低下する。
When removing evaporated matter adhering to the interior of the reaction vessel, especially the optical system adjuster, the surface of the optical system adjuster is often scratched. Naturally, the laser irradiation efficiency of an optical system adjuster that has suffered surface damage decreases.

本発明は、特開昭59−116373号公報に開示され
ているレーザ蒸着装置における上記問題点を解消し、反
応容器内、とりわけ光学基調!l器の汚染を防止しうる
とともに被覆層の強度特性の向上、被覆層と基板との密
着性の向上を可能たらしめる新規構造のレーザを用いた
蒸着装置の提供を目的とする。
The present invention solves the above-mentioned problems in the laser vapor deposition apparatus disclosed in Japanese Patent Application Laid-Open No. 59-116373, and eliminates the problem within the reaction vessel, especially the optical base. The object of the present invention is to provide a vapor deposition apparatus using a laser with a new structure that can prevent contamination of a container, improve the strength characteristics of the coating layer, and improve the adhesion between the coating layer and the substrate.

[問題点を解決するための手段] 木発明者らは上記目的を達成すべく鋭意研究を重ねたと
ころ、被照射試料を蒸発しているときに汚染防止の対象
個所に後述する洗浄用のイオンビームを照射して付着物
をスパッタすることは有効な手段であるとの事実を見出
し、本発明の装置を開発するに到った。
[Means for Solving the Problems] After intensive research to achieve the above objective, the inventors discovered that while the irradiated sample was being evaporated, cleaning ions, which will be described later, were applied to the areas targeted for contamination prevention. It was discovered that sputtering deposits by beam irradiation is an effective means, and the apparatus of the present invention was developed.

すなわち、本発明のレーザを用いた蒸着装置は、反応容
器内で軸回転する被照射試料と、レーザ光を導入しかつ
集束せしめて該被照射試料に照射する光学系調整器と、
該被照射試料に対向して配設され、その表面には該被照
射試料の蒸発物による被覆層が形成される基板とを具備
するレーザを用いた蒸着装置において、該光学系調整基
を照射する洗i+用イオンビームのイオン源が付設され
ていることを特徴とする。
That is, the vapor deposition apparatus using the laser of the present invention includes: an irradiated sample whose axis rotates within a reaction container; an optical system adjuster that introduces and focuses laser light and irradiates the irradiated sample;
The optical system adjustment group is irradiated in a vapor deposition apparatus using a laser, which is equipped with a substrate disposed opposite to the irradiated sample, and on the surface of which a coating layer of evaporated matter of the irradiated sample is formed. It is characterized in that it is equipped with an ion source for an ion beam for cleaning i+.

以下に本発明装置を概略図として示した例に基づいて更
に詳細に説明する。
The apparatus of the present invention will be explained in more detail below based on an example shown as a schematic diagram.

図で、1は反応容器で内部は真空または所定圧のAr、
He、N2のようなガス雰囲気に維持される。2は容器
1の中に配設された被照射試料であって、紙面を垂直の
方向に伸張する回転@2aの周りを例えば矢線Pi力方
向軸回転する。
In the figure, 1 is a reaction vessel with a vacuum inside or a predetermined pressure of Ar,
A gas atmosphere such as He or N2 is maintained. Reference numeral 2 denotes an irradiated sample disposed in the container 1, which rotates around a rotation @2a that extends in a direction perpendicular to the plane of the paper, for example, along an axis in the force direction of arrow Pi.

この被照射試料は、基体の表面に形成させようとする被
覆層の種類に応じて黒鉛、炭素、金属。
The irradiated sample can be graphite, carbon, or metal depending on the type of coating layer to be formed on the surface of the substrate.

合金、金属化合物またはセラミックス焼結体のなかの少
なくとも1種から成る材質で構成される。
The material is made of at least one of alloys, metal compounds, and ceramic sintered bodies.

具体的には、黒鉛;炭素;Ti、Zr、Hf。Specifically, graphite; carbon; Ti, Zr, Hf.

V 、 N b 、 T a 、 W 、 M o 、
 Cr 、 B 、 S iの金属若しくはこれらを含
む合金;各種の超硬合金、サーメットなどの合金;Ti
C。
V, Nb, Ta, W, Mo,
Cr, B, Si metals or alloys containing these; alloys such as various cemented carbides and cermets; Ti
C.

TiN、TiC2、TiB2 、Al2O3。TiN, TiC2, TiB2, Al2O3.

S ic 、Si3 N4.hBN、cBN、Ti (
C。
S ic , Si3 N4. hBN, cBN, Ti (
C.

N)、(Ti 、Ta)Cなどの金属化合物;Al2O
3系セラミックス、ZrO2系セラミックス、SiC系
セラミックス、Si3N4系セラミ、クス、cBN系焼
結体、ダイヤモンド系焼結体などのセラミックス焼結体
を例示することができる。また、被照射試料の形状とし
ては、円柱体1円筒体9円錐体、湾曲体、リング体1円
板体など軸回転の際にバランスよく回転できる形状であ
ればどのような形であってもよい。これらの形状体は上
に列記した各材質のみで構成されてもよいが、上記各材
質を2種類以上使用してこれらを複合した形状にすると
、基板の表面には多重の層構成の被覆層を形成すること
ができて有用である。
Metal compounds such as N), (Ti, Ta)C; Al2O
Ceramic sintered bodies such as 3-based ceramics, ZrO2-based ceramics, SiC-based ceramics, Si3N4-based ceramics, clay, cBN-based sintered bodies, and diamond-based sintered bodies can be exemplified. In addition, the shape of the sample to be irradiated can be any shape as long as it can rotate in a well-balanced manner during axis rotation, such as a cylinder, a cylinder, a cone, a curved body, a ring, and a disk. good. These shaped objects may be made of only each of the materials listed above, but if two or more of the above materials are used to create a composite shape, a multi-layered coating layer will be formed on the surface of the substrate. It is useful to be able to form

なお、被照射試料2が回転軸2aの軸長方向に摺動でき
るようにしておくと、後述するレーザ光照射の際に、被
照射試料の被照射領域を拡張することができて有効であ
る。
Note that it is effective to allow the irradiated sample 2 to slide in the axial length direction of the rotating shaft 2a, since it is possible to expand the irradiated area of the irradiated sample during laser beam irradiation, which will be described later. .

また、被照射試料にレーザ光が照射されると、該試料は
急激に部分加熱されて往々にして熱割れ現象を起すこと
があるが、これを防止するために、レーザ光照射に先立
ち被照射試料を予熱することを目的として、該被照射試
料の外周部に温度制御が可能な加熱器3を配設しておく
と好適である。
In addition, when a laser beam is irradiated onto a sample to be irradiated, the sample is rapidly partially heated and often causes thermal cracking, but in order to prevent this, the irradiated sample is For the purpose of preheating the sample, it is preferable to dispose a heater 3 whose temperature can be controlled around the outer periphery of the sample to be irradiated.

レーザ光は、発振器4で発振され例えばCu製の平面鏡
4a、4bで矢線P2のように光路転換され、集光レン
ズ5aで集光されて容器1内に導入される。
The laser beam is oscillated by an oscillator 4, has its optical path changed by plane mirrors 4a and 4b made of Cu, for example, as shown by an arrow P2, is condensed by a condensing lens 5a, and is introduced into the container 1.

5bは例えばKCl製の透過窓でここからレーザ光が導
入される。そして、レーザ光は容器1の内壁に付設され
た例えばCu製の凹面鏡(又は放物面鏡)5cの鏡面に
到達し、ここで集束されかつ光路転換されて矢線P3に
ように進んで被照射試料2の被照射面を接線方向から照
射する。
5b is a transmission window made of, for example, KCl, through which the laser beam is introduced. Then, the laser beam reaches the mirror surface of a concave mirror (or parabolic mirror) 5c made of Cu, for example, attached to the inner wall of the container 1, is focused there, has its optical path changed, and travels in the direction of arrow P3 to be exposed. The irradiated surface of the irradiated sample 2 is irradiated from the tangential direction.

本発明装置においては、上記した透過窓5b。In the device of the present invention, the above-mentioned transmission window 5b.

凹面鏡(若しくは放物面鏡)を全体として光学系調整器
という。なお、凹面鏡又は放物面鏡5cは透過窓5bか
ら進んできたレーザ光の反射角を微量調整できるように
しておくと、被照射試料の被照射面へのレーザ光照射の
コントロールが容易に行なえて好適である。
The concave mirror (or parabolic mirror) as a whole is called an optical system adjuster. Note that if the concave mirror or parabolic mirror 5c is configured to allow slight adjustment of the reflection angle of the laser beam that has advanced from the transmission window 5b, the irradiation of the laser beam onto the irradiated surface of the irradiated sample can be easily controlled. It is suitable.

かくして、被照射試$42の被照射面からは矢線P4方
向に蒸発物が放散していく。
In this way, evaporated matter is diffused from the irradiated surface of irradiated sample $42 in the direction of arrow P4.

被照射試#42の上方には基板6が対向して配設される
。基板には、ガラス、合成樹脂、金属。
A substrate 6 is disposed above and facing the irradiated sample #42. Substrates include glass, synthetic resin, and metal.

合金、セラミックス焼結体など用途に応じて全ゆる材質
のものを用いることができる。具体的には、耐熱ガラス
;熱硬化性樹脂;Ti、Zr。
All kinds of materials can be used depending on the purpose, such as alloys and ceramic sintered bodies. Specifically, heat-resistant glass; thermosetting resin; Ti, Zr.

Hf 、V、Nb、Ta、W、Mo、Cr、Al 。Hf, V, Nb, Ta, W, Mo, Cr, Al.

Cu 、Fe 、Ni 、Coなどの金属−炭素鋼、高
速度鋼、ステンレススティール、ハステロイ、インコネ
ル、B硬合金、サーメットなどの合金;Al2O3系セ
ラミックス、ZrO2系セラミックス、S i3 N4
系セラミツクス、SiC系セラミックス、TiC系セラ
ミックス、TfEz系セラミックス、B4C系セラミッ
クス、cBN系焼結体、ダイヤモンド系焼結体などのセ
ラミックス焼結体;を例示することができる。
Metals such as Cu, Fe, Ni, Co, etc. - Alloys such as carbon steel, high speed steel, stainless steel, Hastelloy, Inconel, B hard alloy, cermet; Al2O3 ceramics, ZrO2 ceramics, Si3 N4
Ceramic sintered bodies such as ceramics, SiC ceramics, TiC ceramics, TfEz ceramics, B4C ceramics, cBN sintered bodies, and diamond sintered bodies can be exemplified.

これらの材質から成る基板6の表面には被照射試料2か
らの蒸発物が沈着して被覆層が形成されるのであるが、
ス(板6と被覆層との密着性を高めるために、基板を昇
温する装置、例えば基板6の外周部に温度制御ができる
加熱器6aを配設することが好適である。7は、基板6
の前面に設置された可動シャッタであって、蒸発物の基
板6への蒸着時間を任意に調節する。
Evaporated matter from the irradiated sample 2 is deposited on the surface of the substrate 6 made of these materials to form a coating layer.
(In order to improve the adhesion between the plate 6 and the coating layer, it is preferable to provide a device for raising the temperature of the substrate, for example, a heater 6a that can control the temperature on the outer periphery of the substrate 6.7) Board 6
A movable shutter installed in front of the substrate 6 arbitrarily adjusts the deposition time of the evaporated material onto the substrate 6.

本発明装置は、更に後述のイオンrA8を備えている。The device of the present invention further includes ion rA8, which will be described later.

このイオン源8から照射されるイオンビームは光学系A
整器の反射面に射突して反射面に付着している(または
付着しつつある)蒸発物をスパッタして除去でき、しか
も反射面に化学的変化などの損傷を起こさないイオンビ
ームであれば何であってもよい。具体的には、Ar、H
e、82などのイオンビームをあげることができる。
The ion beam irradiated from this ion source 8 is
An ion beam that can hit the reflective surface of the reflector and sputter and remove the evaporated matter that has adhered to (or is about to adhere to) the reflective surface, and that does not cause damage such as chemical changes to the reflective surface. It can be anything. Specifically, Ar, H
Ion beams such as ion beams such as e and 82 can be used.

したがって、このイオン源8は、図の凹面鏡5c、透過
窓5bのような光学系調整器をターゲットにするような
位置に配設される。またこのイオンrA8はターゲット
の位置に対応して所定の角度で首掘り運動ができる機構
を備えていることが好適である。
Therefore, this ion source 8 is arranged at a position that targets optical system adjusters such as the concave mirror 5c and the transmission window 5b shown in the figure. Further, it is preferable that the ion rA8 is provided with a mechanism that allows it to perform neck-digging motion at a predetermined angle corresponding to the position of the target.

かくして、イオンビームが光学系調整器に照射されると
透過窓5bの内側の面、凹面鏡若しくは放物面鏡5Cの
表面に付着してくる蒸発物はこのイオンビームによるス
パッタ効果またはボンバード効果によって除去されこれ
ら光学系調整器が清掃される。かくして、この場合は、
光学系調整器の蒸発物による汚染を随時除去することが
でき、光学系調整器のレーザ照射効率を設計基準どおり
に保持することができ装置の連続運転が可能となる。こ
の効果を得るために必要なイオンビームのエネルギーは
数十eVから数千eVであればよい。
Thus, when the optical system adjuster is irradiated with the ion beam, the evaporated matter that adheres to the inner surface of the transmission window 5b, the surface of the concave mirror or the parabolic mirror 5C is removed by the sputtering effect or bombardment effect of the ion beam. and these optical system adjusters are cleaned. Thus, in this case,
Contamination of the optical system adjuster due to evaporated matter can be removed at any time, the laser irradiation efficiency of the optical system adjuster can be maintained as per the design standard, and the device can be operated continuously. The energy of the ion beam required to obtain this effect may range from several tens of eV to several thousand eV.

[発明の効果コ 以上の説明で明らかなように、本発明のレーザを用いた
蒸着装置は、形成すべき被覆層に含有されてもよいイオ
ン種のビームを照射するイオン源を具備し、このイオン
ビームを透過窓、凹面鏡、(または放物面鏡)のような
光学系調整器に照射すればその光学系調整器への蒸着物
による付着を防止することができ、もってレーザ照射効
率の低下が防止され、装置の長時間に亘る連続運転も可
能となって作業能率は大幅に向上してその工業的価値は
大である。
[Effects of the Invention] As is clear from the above description, the vapor deposition apparatus using the laser of the present invention is equipped with an ion source that irradiates a beam of ion species that may be contained in the coating layer to be formed, and By irradiating the ion beam onto an optical system adjuster such as a transmission window, concave mirror, or parabolic mirror, it is possible to prevent deposits from adhering to the optical system adjuster, thereby reducing laser irradiation efficiency. It is possible to operate the device continuously for a long period of time, and the work efficiency is greatly improved, which is of great industrial value.

[発明の実施例] 以下に本発明装置の優れた効果を立証すべく具体的に実
施例を示す。
[Examples of the Invention] Examples will be specifically shown below to demonstrate the excellent effects of the device of the present invention.

実施例I Cu製の凹面鏡5c、材質がTiC−TiN系セラミッ
クスで円柱体の被照射試料2.WC5重量%の超硬合金
製の基板6を容器1内にセットして図に示したような装
置を組立てた。
Example I A concave mirror 5c made of Cu, made of TiC-TiN ceramics, and a cylindrical irradiated sample 2. A substrate 6 made of cemented carbide containing 5% by weight of WC was set in a container 1 to assemble an apparatus as shown in the figure.

容器1内をl X 10’ Torrよりも高真空とな
るように排気し、被照射試料2を2Orpmで軸回転さ
せながら加熱器3によって500 ’Cに予熱し、また
基板6を加熱器6aによって500°Cに予熱した。
The inside of the container 1 was evacuated to a higher vacuum than 1 x 10' Torr, and the sample 2 to be irradiated was preheated to 500'C by the heater 3 while rotating at 2 Orpm, and the substrate 6 was heated to 500'C by the heater 6a. Preheated to 500°C.

つぎにレーザ光発振器4からCWCO2レーザ光を発振
させ、透過窓5b(KCl製)から容器1内に導入し、
これを凹面鏡5Cで集光して2000Wの集束cwco
、、レーザ光を被照射試料2にその接線方向から照射し
て基板6の表面にTiC−TiN系の被覆層を形成した
。このとき、イオン源8からはイオン加速エネルギーが
1000eVの窒素イオンビームを凹面鏡5Cに照射し
続けたところ、凹面鏡5Cの鏡面の汚染が起こらず連続
的に草着可能であった。一方、イオンビームを照射しな
い場合は、20分間の使用で凹面鏡の汚染が徴しくなり
蒸着効率が著しく低下して使用不能となった。
Next, a CWCO2 laser beam is oscillated from the laser beam oscillator 4, and introduced into the container 1 through the transmission window 5b (made of KCl).
This is condensed by concave mirror 5C to produce a condensing cwco of 2000W.
A TiC--TiN-based coating layer was formed on the surface of the substrate 6 by irradiating the irradiated sample 2 with laser light from the tangential direction thereof. At this time, when the concave mirror 5C was continuously irradiated with a nitrogen ion beam having an ion acceleration energy of 1000 eV from the ion source 8, the mirror surface of the concave mirror 5C was not contaminated and continuous weeding was possible. On the other hand, when the ion beam was not irradiated, the concave mirror became contaminated after 20 minutes of use, and the vapor deposition efficiency decreased significantly, making it unusable.

【図面の簡単な説明】[Brief explanation of drawings]

図は本発明のレーザ蒸発装置の好適な1例を示す概略図
である。 1−反応容器  2−被照射試料 2a−回転軸  3−加熱器 4−レーザ光発振器  4a、4b−ミラー5a−集光
レンズ  5b−透過窓 5C−凹面鏡(放物面鏡)  6−基板6a−加熱器 
 7−可動シャッタ 8−イオン源
The figure is a schematic diagram showing a preferred example of the laser evaporation device of the present invention. 1-Reaction container 2-Irradiated sample 2a-Rotation axis 3-Heater 4-Laser beam oscillator 4a, 4b-Mirror 5a-Condensing lens 5b-Transmission window 5C-Concave mirror (parabolic mirror) 6-Substrate 6a- Heater
7- Movable shutter 8- Ion source

Claims (1)

【特許請求の範囲】 1、反応容器内で軸回転する被照射試料と、レーザ光を
導入しかつ集束せしめて該被照射試料に照射する光学系
調整器と、該被照射試料に対向して配設され、その表面
には該被照射試料の蒸発物による被覆層が形成される基
板とを具備するレーザを用いた蒸着装置において、該光
学系調整器を照射する洗浄用イオンビームのイオン源が
付設されていることを特徴とするレーザを用いた蒸着装
置。 2、該イオン源が、窒素イオン又は不活性元素イオン源
のいずれかである特許請求の範囲第1項記載のレーザを
用いた蒸着装置。 3、該被照射試料には、温度制御が可能な加熱器が付設
されている特許請求の範囲第1項記載のレーザを用いた
蒸着装置。 4、該基板には、温度制御が可能な加熱器が付設されて
いる特許請求の範囲第1項記載のレーザを用いた蒸着装
置。
[Claims] 1. An irradiated sample that rotates around an axis within a reaction vessel, an optical system adjuster that introduces and focuses laser light and irradiates the irradiated sample, and an optical system adjuster that faces the irradiated sample. an ion source of a cleaning ion beam that irradiates the optical system adjuster in a vapor deposition apparatus using a laser, the substrate having a substrate on whose surface a coating layer of evaporated matter of the irradiated sample is formed; A vapor deposition device using a laser, characterized in that it is equipped with a. 2. A vapor deposition apparatus using a laser according to claim 1, wherein the ion source is either a nitrogen ion or an inert element ion source. 3. A vapor deposition apparatus using a laser according to claim 1, wherein the irradiated sample is provided with a heater capable of temperature control. 4. A vapor deposition apparatus using a laser according to claim 1, wherein the substrate is provided with a heater capable of controlling temperature.
JP1106386A 1986-01-23 1986-01-23 REEZAOMOCHIITAJOCHAKUSOCHI Expired - Lifetime JPH0244901B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1106386A JPH0244901B2 (en) 1986-01-23 1986-01-23 REEZAOMOCHIITAJOCHAKUSOCHI

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1106386A JPH0244901B2 (en) 1986-01-23 1986-01-23 REEZAOMOCHIITAJOCHAKUSOCHI

Publications (2)

Publication Number Publication Date
JPS62170473A true JPS62170473A (en) 1987-07-27
JPH0244901B2 JPH0244901B2 (en) 1990-10-05

Family

ID=11767540

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1106386A Expired - Lifetime JPH0244901B2 (en) 1986-01-23 1986-01-23 REEZAOMOCHIITAJOCHAKUSOCHI

Country Status (1)

Country Link
JP (1) JPH0244901B2 (en)

Also Published As

Publication number Publication date
JPH0244901B2 (en) 1990-10-05

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