JPS62169486A - Semiconductor laser driving device - Google Patents
Semiconductor laser driving deviceInfo
- Publication number
- JPS62169486A JPS62169486A JP61011320A JP1132086A JPS62169486A JP S62169486 A JPS62169486 A JP S62169486A JP 61011320 A JP61011320 A JP 61011320A JP 1132086 A JP1132086 A JP 1132086A JP S62169486 A JPS62169486 A JP S62169486A
- Authority
- JP
- Japan
- Prior art keywords
- pulse
- current
- output
- semiconductor laser
- luminescence
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 21
- 238000005070 sampling Methods 0.000 claims abstract description 10
- 238000001514 detection method Methods 0.000 claims description 4
- 230000001105 regulatory effect Effects 0.000 claims 1
- 230000001360 synchronised effect Effects 0.000 claims 1
- 230000010355 oscillation Effects 0.000 abstract description 4
- 238000004020 luminiscence type Methods 0.000 abstract 4
- 230000003321 amplification Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
- H01S5/06835—Stabilising during pulse modulation or generation
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Optical Communication System (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、光通信、コンパクトディスク、光デスク等の
半導体レーザーを使用する機器に適した半導体レーザ駆
動装置に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a semiconductor laser drive device suitable for devices using semiconductor lasers such as optical communications, compact discs, and optical desks.
従来の技術
従来第3図に示すように、半導体レーザをパルス駆動す
るには、半導体レーザを適当なバイアス電流IBで直流
バイアスを掛けておき、これにパルス電流1pを印加す
ることによって行なわれる。即ち、入力部1からパルス
信号をパルス電流駆動部2に入力し、その出力の駆動パ
ルス電流1pを半導体レーザ3に直流電流駆動部7から
のバイアス電流IBと重畳して印加すると共に、半導レ
ーザ3の発光を検出手段としてのフォトダイオード4で
モニタし、出力を電流増幅部5、直流増幅部6により増
幅して直流電流駆動部7で基準電圧V refと比較し
、直流バイアスisを定める。またフォトダイオード4
、電流増幅部5、直流増幅部6、電流駆動部7、半導体
レーザ3により負帰還ループを形成し、出力パワーが増
大すると、半導体レーザ3の出力が増大するので、直流
IBが減少して出力を低下させるように構成して、レー
ザの温度変化に伴なうレーザ発振のしきい値の補償を行
なうようになっている。2. Description of the Related Art As shown in FIG. 3, a semiconductor laser is pulse-driven by applying a direct current bias to the semiconductor laser with an appropriate bias current IB and applying a pulse current 1p to the semiconductor laser. That is, a pulse signal is inputted from the input section 1 to the pulse current drive section 2, and the output drive pulse current 1p is applied to the semiconductor laser 3 in a superimposed manner with the bias current IB from the DC current drive section 7. The light emission of the laser 3 is monitored by a photodiode 4 as a detection means, and the output is amplified by a current amplification section 5 and a DC amplification section 6, and compared with a reference voltage V ref by a DC current drive section 7 to determine a DC bias is. . Also photodiode 4
, a negative feedback loop is formed by the current amplifying section 5, the DC amplifying section 6, the current driving section 7, and the semiconductor laser 3, and as the output power increases, the output of the semiconductor laser 3 increases, so the DC IB decreases and the output The laser oscillation threshold is compensated for by decreasing the laser oscillation threshold due to changes in the temperature of the laser.
なお、フォトダイオード°4の出力パルス電流のピーク
値を検 することによって、レーザの出力パルス光のピ
ーク値を一定に保つことも行われて来た。Note that the peak value of the output pulsed light of the laser has also been kept constant by detecting the peak value of the output pulsed current of the photodiode °4.
発明が解決しようとする問題点
しかしながら上記従来の半導体レーザ駆動装置では、駆
動パルス電流1pの値が一定であり、出力パワ変動をバ
イアス電流IB値の変化により制御し一定としているた
め、半導体レーザ3の外部微分量子効率が変化したこと
による出力パワ変動に対しては十分安定した制御を行な
うことは無理であった。更に出力パルスの平均値を検出
、又はピーク値を一般的なピーク検波方法により検出し
てフィードバック制御している為、光ディスク等の不連
続なパルス信号に対し十分速い応答速度で安定した出力
パワ制御は困難であった。Problems to be Solved by the Invention However, in the conventional semiconductor laser driving device described above, the value of the driving pulse current 1p is constant, and the output power fluctuation is controlled and kept constant by changing the bias current IB value. It has been impossible to perform sufficiently stable control against output power fluctuations due to changes in external differential quantum efficiency. Furthermore, feedback control is performed by detecting the average value of the output pulse or the peak value using a general peak detection method, so stable output power control is achieved with a sufficiently fast response speed for discontinuous pulse signals from optical discs, etc. was difficult.
本発明はこのような従来の問題点を解決するものであり
、レーザの外部微分量子効率が変化し、或いは不連続な
パルス信号に対しても十分速かに応答速度で安定した制
御ができる優れた半導体レーザ駆動装置を提供すること
を目的とするものである。The present invention solves these conventional problems, and has the advantage of being able to perform stable control with a sufficiently fast response speed even when the external differential quantum efficiency of the laser changes or when discontinuous pulse signals are received. It is an object of the present invention to provide a semiconductor laser driving device with improved performance.
問題点を解決するだめの手段
本発明は上記目的を達成するために、半導体レーザを駆
動するバイアス電流とパルス電流の両方に対し、レーザ
発光をフォートダイオード等でモニタして、そのピーク
値をサンプルホールドして、これによりフィードバック
制御するように構成したものである。Means for Solving the Problems In order to achieve the above object, the present invention monitors the laser emission with a fort diode etc. for both the bias current and pulse current that drive the semiconductor laser, and samples the peak value. It is configured to hold and thereby perform feedback control.
作用
本発明は上記のように構成したので、外部微分量子効率
の変化に対してはパルス電流1pの補償により、また温
度変化等による;〜きい値の変化に対してはバイアス電
流It)の補償によりそれぞれ補正し、その結果常に安
定なレーザ発光コントロールが行えるという効果を有す
る。Operation Since the present invention is constructed as described above, changes in the external differential quantum efficiency can be compensated by the pulse current 1p, and changes in the threshold can be compensated for by the bias current It). As a result, stable laser emission control can be performed at all times.
実施例
以丁本発明の一実施例の構成につ1゜八で、第1図第2
図と共に説明する。B71図で、8.9はそれぞれ第1
、第2のサンプリングホールド部、10はパルス電流制
御部、Vref 1 、Vref 2はそれぞれ第1、
第2の基準電圧の入力端子、Cはパルス駆動部2の制御
端子である。他の第2図と同様な符号は同一の名称を表
わすものとする。Embodiment The structure of an embodiment of the present invention is shown in Fig. 1 and Fig. 2.
This will be explained with figures. In figure B71, 8.9 is the first
, a second sampling hold section, 10 a pulse current control section, Vref 1 and Vref 2 the first,
The second reference voltage input terminal C is a control terminal of the pulse drive unit 2. Other symbols similar to those in FIG. 2 represent the same names.
次に上記実施例の動作について説明する。入力部1より
パルス状の入力電流がパルス駆動部2に入力すると、バ
イアス電流1bにより発振(光)のしかい値近傍に保持
された半導体レーザ3はパルス電流IPによりパルス的
に発光する。Next, the operation of the above embodiment will be explained. When a pulsed input current is input from the input section 1 to the pulse drive section 2, the semiconductor laser 3, which is held near the threshold of oscillation (light) by the bias current 1b, emits light in a pulsed manner by the pulse current IP.
半導体レーザ3の発光はフォトダイオード4で受光モニ
タされ、その出力は電流増幅部5で増幅の上で、第1、
第2のサンプリングホールド部8.9に平皿に入力され
る。第1のサンプリングホールド部8は発光パルスのO
レベル(最小値)を入力パルス同期してサンプリングホ
ールドする。サーブリングホールド部8の出力は直流駆
動部7を経由して、バイアス電流IBを一定値にフィー
ドバック制御する。−刃用2のサンプリングホールド部
9は、発光パルスのルベル(最大値)を受光モニタし、
パルス電流制御部10で第2の基準電圧Vref2と比
較し、その出力により制御端子Cを介して、パルス電流
駆動部2のパルス電流を同様フィードバック制御する。The light emitted from the semiconductor laser 3 is monitored by the photodiode 4, and the output thereof is amplified by the current amplification section 5, and then
The second sampling and holding section 8.9 is inputted onto a flat plate. The first sampling and holding unit 8 holds the O of the light emission pulse.
Sample and hold the level (minimum value) in synchronization with the input pulse. The output of the serving ring and hold section 8 is passed through the DC drive section 7 to feedback control the bias current IB to a constant value. - The sampling hold section 9 of the blade 2 monitors the level (maximum value) of the light emission pulse,
The pulse current controller 10 compares it with the second reference voltage Vref2, and the pulse current of the pulse current driver 2 is similarly feedback-controlled via the control terminal C based on its output.
制御の様子を第2図により説明する1、同図で横軸は雪
、流(1)、縦軸は発光の強さに対応する出カバヮ (
P、)で、イは半導体レーザの発光特性、口は駆動の・
:ルス電流ip、ハはバイアス電流1bである。外部微
分量子効率が変化して、発光特性がホの破線のように変
っても、パルス電流1pを発光パルス[のレベルを検出
して二のように増加させて、発光パルス−・のピーク値
を一定に保てることを示し7ている。The control situation will be explained with reference to Figure 2 (1), in which the horizontal axis represents snow and flow (1), and the vertical axis represents the output (
P, ), A is the emission characteristics of the semiconductor laser, and
: bias current ip, and c is bias current 1b. Even if the external differential quantum efficiency changes and the emission characteristics change as shown by the broken line E, the pulse current 1p can be increased as shown in 2 by detecting the level of the emission pulse [2], and the peak value of the emission pulse -. 7 shows that it is possible to keep constant.
また、温度変化(で対しては、発光パルスの0レベルを
検出し、バイアス電流1bを変化させることによって補
正を行なう。Further, for temperature changes, correction is performed by detecting the 0 level of the light emission pulse and changing the bias current 1b.
なお、上記構成では、出力パルスのピーク値をサンプル
ホールドしているので、従来のレーザの出力光の平均値
を検出或いはピーク値のピーク検出を行なう方式に比較
して迅速な応答が期待出来る。In the above configuration, since the peak value of the output pulse is sampled and held, a faster response can be expected compared to the conventional method of detecting the average value of the laser output light or detecting the peak value.
発明の効果
本発明は上記実施例より明らかなよう例、レーザの出力
パルス光の0のレベルと1のレベルをそれぞれ検出フィ
ードバック制御できるようにしたものであり、温度変化
によるしきい値変動、外部微分量子効率の変動に対して
レーザの出力パルスのパワレベルを常に一定に制御でき
るという利点を有する。更に入力パルスの不連続に対し
ても速い応答速度で追従制御できるという効果を有する
。Effects of the Invention As is clear from the above embodiments, the present invention is capable of detecting and feedback controlling the 0 level and 1 level of the output pulsed light of the laser, and is capable of controlling threshold fluctuations due to temperature changes and external This has the advantage that the power level of the laser output pulse can always be controlled to be constant despite variations in the differential quantum efficiency. Furthermore, there is an effect that follow-up control can be performed with a fast response speed even to discontinuity of input pulses.
第1図は本発明の一実施例における半導体レーザ駆動装
置のブロック図、第2図は同電流−出力特性図、第3図
は従来の駆動装置のブロック図である。
1・・・入力部、2・・・パルス電流駆動部、3・・・
半導体レーザ、4・・・フォトダイオード、7・・・直
流電流駆動部、8.9・・・サンプリングホールド部、
10・・・パルス電流制御部。
代理人の氏名 弁理士 中 尾 敏 男 ほか1多筒
1 図
第2図
第3図FIG. 1 is a block diagram of a semiconductor laser driving device according to an embodiment of the present invention, FIG. 2 is a current-output characteristic diagram of the same, and FIG. 3 is a block diagram of a conventional driving device. 1... Input section, 2... Pulse current drive section, 3...
Semiconductor laser, 4... Photodiode, 7... DC current drive unit, 8.9... Sampling hold unit,
10... Pulse current control section. Name of agent: Patent attorney Toshio Nakao and 1 other person
1 Figure 2 Figure 3
Claims (1)
を規制する直流駆動部の両方の合成電流で駆動される半
導体レーザと、前記半導体レーザの発光パルスの最大値
と最小値を検出する検出手段と、前記検出手段の出力を
それぞれ保持するサンプリングホールド回路とを備え、
前記サンプリングホールド回路の出力により前記パルス
駆動部と直流駆動部をフィードバック制御するようにし
た半導体レーザ駆動装置。a semiconductor laser driven by a combined current of both a pulse drive section synchronized with an input pulse signal and a DC drive section regulating bias current; a detection means for detecting a maximum value and a minimum value of a light emission pulse of the semiconductor laser; and a sampling hold circuit that holds the outputs of the detection means, respectively,
A semiconductor laser driving device, wherein the pulse driving section and the DC driving section are feedback-controlled by the output of the sampling and holding circuit.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61011320A JPS62169486A (en) | 1986-01-22 | 1986-01-22 | Semiconductor laser driving device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61011320A JPS62169486A (en) | 1986-01-22 | 1986-01-22 | Semiconductor laser driving device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS62169486A true JPS62169486A (en) | 1987-07-25 |
Family
ID=11774730
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP61011320A Pending JPS62169486A (en) | 1986-01-22 | 1986-01-22 | Semiconductor laser driving device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS62169486A (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01258484A (en) * | 1988-04-08 | 1989-10-16 | Nippon Telegr & Teleph Corp <Ntt> | Laser diode drive circuit |
EP0683552A3 (en) * | 1994-05-20 | 1996-05-01 | Cselt Centro Studi Lab Telecom | Method and device for controlling the peak power of a laser transmitter in discontinuous optical transmission systems. |
EP0725462A1 (en) * | 1995-02-02 | 1996-08-07 | Siemens Aktiengesellschaft | Two level laserdiode power control using a single control circuit |
WO1996025781A1 (en) * | 1995-02-14 | 1996-08-22 | Linotype-Hell Ag | Process and circuit arrangement for regulating the luminous power of laser diodes |
WO1997011517A1 (en) * | 1995-09-05 | 1997-03-27 | Linotype-Hell Ag | Method and device for triggering diode-pumped solid state lasers |
WO2004107611A1 (en) * | 2003-06-02 | 2004-12-09 | Matsushita Electric Industrial Co., Ltd. | Laser diode extinction ratio control method and circuit, integrated circuit, transmitter, and communication system |
JPWO2014038338A1 (en) * | 2012-09-06 | 2016-08-08 | 住友電気工業株式会社 | OPTICAL COMMUNICATION MODULE, HOME EQUIPMENT AND LIGHT EMITTING DEVICE CONTROL METHOD |
-
1986
- 1986-01-22 JP JP61011320A patent/JPS62169486A/en active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01258484A (en) * | 1988-04-08 | 1989-10-16 | Nippon Telegr & Teleph Corp <Ntt> | Laser diode drive circuit |
EP0683552A3 (en) * | 1994-05-20 | 1996-05-01 | Cselt Centro Studi Lab Telecom | Method and device for controlling the peak power of a laser transmitter in discontinuous optical transmission systems. |
EP0725462A1 (en) * | 1995-02-02 | 1996-08-07 | Siemens Aktiengesellschaft | Two level laserdiode power control using a single control circuit |
WO1996025781A1 (en) * | 1995-02-14 | 1996-08-22 | Linotype-Hell Ag | Process and circuit arrangement for regulating the luminous power of laser diodes |
WO1997011517A1 (en) * | 1995-09-05 | 1997-03-27 | Linotype-Hell Ag | Method and device for triggering diode-pumped solid state lasers |
WO2004107611A1 (en) * | 2003-06-02 | 2004-12-09 | Matsushita Electric Industrial Co., Ltd. | Laser diode extinction ratio control method and circuit, integrated circuit, transmitter, and communication system |
JPWO2014038338A1 (en) * | 2012-09-06 | 2016-08-08 | 住友電気工業株式会社 | OPTICAL COMMUNICATION MODULE, HOME EQUIPMENT AND LIGHT EMITTING DEVICE CONTROL METHOD |
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