JPS62166624U - - Google Patents

Info

Publication number
JPS62166624U
JPS62166624U JP1986054753U JP5475386U JPS62166624U JP S62166624 U JPS62166624 U JP S62166624U JP 1986054753 U JP1986054753 U JP 1986054753U JP 5475386 U JP5475386 U JP 5475386U JP S62166624 U JPS62166624 U JP S62166624U
Authority
JP
Japan
Prior art keywords
core tube
heat treatment
ring
cylinder
outer cylinder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1986054753U
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1986054753U priority Critical patent/JPS62166624U/ja
Priority to US07/036,803 priority patent/US4803948A/en
Publication of JPS62166624U publication Critical patent/JPS62166624U/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4409—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber characterised by sealing means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)

Description

【図面の簡単な説明】
第１図は本考案の１実施例を示す半断面斜視図
、第２図は同装置の要部を示す断面図、第３図は
同じ要部の他の実施例を示す断面図、第４図は従
来の半導体製造用熱処理炉の１例を示す概略断面
図である。 １……炉心管、２，２′……ヒーター、３……
フランジ部、４，５……輪体、６，７……パツキ
ング、８……導入管、９……蓋、１０……パツキ
ング、１１……炉心管、１２……クツシヨンリン
グ、１３……内筒、１４……輪体、１５……外筒
、１６……輪体、１７……フランジ、１８，１９
……ボルト、２０，２１，２２……リング状パツ
キング、２３……蓋、２４……排気管、２５……
排気孔、２６……不活性ガス送気管、２７……通
気溝、２８……噴気孔、３０……冷却水管、３４
……中空パツキング。

Claims (1)

  1. 【実用新案登録請求の範囲】 (1) 一端を小径に絞り、他端を本体部と等径の
    開口部とした円筒状の炉心管と、 該炉心管の前記開口部に近い外周に巻着したリ
    ング状パツキングと、 前記炉心管の開口部に連接された内筒と、 前記炉心管と前記内筒の外周に嵌設され、前記
    炉心管側端部側の内縁にテーパー部を形成した外
    筒と、 前記炉心管の外周に前記外筒と対向して嵌設さ
    れ、その対向側内縁にテーパー部を形成した輪体
    と、 前記外筒と前記輪体とのテーパー部により挾持
    した前記リング状パツキングを、炉心管外周面に
    圧着するように、外筒と輪体とを緊定する緊定手
    段と、 前記外筒及び内筒の開口端を気密に閉止する蓋
    装置と、よりなる半導体製造用熱処理炉。 (2) リング状パツキングを循環冷却水により冷
    却するようにした実用新案登録請求の範囲第(1)
    項に記載の半導体製造用熱処理炉。 (3) 外筒の炉心管側端部に中空フランジ部を形
    成し、該中空フランジ部に冷却水を循環させるこ
    とを特徴とする実用新案登録請求の範囲第(2)項
    に記載の半導体製造用熱処理炉。 (4) リング状パツキングを中空チユーブとし、
    その中に冷却水を循環させることを特徴とする実
    用新案登録請求の範囲第(2)項に記載の半導体製
    造用熱処理炉。 (5) 内筒に１列または複数列の、周方向に列設
    した噴気孔を、また、該噴気孔に対向する外筒の
    内面に周方向の通気溝をそれぞれ配設し、該通気
    溝に不活性ガスを送りこむ送気管を、外筒に付設
    したことを特徴とする実用新案登録請求の範囲第
    (1)項に記載の半導体熱処理用熱処理炉。
JP1986054753U 1986-04-14 1986-04-14 Pending JPS62166624U (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP1986054753U JPS62166624U (ja) 1986-04-14 1986-04-14
US07/036,803 US4803948A (en) 1986-04-14 1987-04-10 Heat processing apparatus for semiconductor manufacturing

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1986054753U JPS62166624U (ja) 1986-04-14 1986-04-14

Publications (1)

Publication Number Publication Date
JPS62166624U true JPS62166624U (ja) 1987-10-22

Family

ID=12979527

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1986054753U Pending JPS62166624U (ja) 1986-04-14 1986-04-14

Country Status (2)

Country Link
US (1) US4803948A (ja)
JP (1) JPS62166624U (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01133728U (ja) * 1988-03-07 1989-09-12

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4920918A (en) * 1989-04-18 1990-05-01 Applied Materials, Inc. Pressure-resistant thermal reactor system for semiconductor processing
US4950156A (en) * 1989-06-28 1990-08-21 Digital Equipment Corporation Inert gas curtain for a thermal processing furnace
US5254170A (en) * 1989-08-07 1993-10-19 Asm Vt, Inc. Enhanced vertical thermal reactor system
KR950006969B1 (ko) * 1992-01-06 1995-06-26 삼성전자주식회사 반도체 제조용 튜브장치
US5370736A (en) * 1992-10-26 1994-12-06 Texas Instruments Incorporated Horizontal reactor hardware design
US6093252A (en) 1995-08-03 2000-07-25 Asm America, Inc. Process chamber with inner support
US5997588A (en) * 1995-10-13 1999-12-07 Advanced Semiconductor Materials America, Inc. Semiconductor processing system with gas curtain
US6117266A (en) 1997-12-19 2000-09-12 Interuniversifair Micro-Elektronica Cenirum (Imec Vzw) Furnace for continuous, high throughput diffusion processes from various diffusion sources
JP3551006B2 (ja) * 1998-02-26 2004-08-04 住友電気工業株式会社 光ファイバ用多孔質母材の製造方法
DE19920332B4 (de) * 1998-05-04 2010-10-21 Infineon Technologies Ag Prozeßreaktor zur Behandlung von Halbleitersubstraten und Verfahren zur Durchführung eines Prozesses
US6080241A (en) * 1998-09-02 2000-06-27 Emcore Corporation Chemical vapor deposition chamber having an adjustable flow flange
US6383330B1 (en) 1999-09-10 2002-05-07 Asm America, Inc. Quartz wafer processing chamber
US6367288B1 (en) 1999-12-29 2002-04-09 Corning Incorporated Method and apparatus for preventing burner-hole build-up in fused silica processes
US6497118B1 (en) * 2000-09-19 2002-12-24 Corning Incorporated Method and apparatus for reducing refractory contamination in fused silica processes
US6946033B2 (en) * 2002-09-16 2005-09-20 Applied Materials Inc. Heated gas distribution plate for a processing chamber
US20040052969A1 (en) * 2002-09-16 2004-03-18 Applied Materials, Inc. Methods for operating a chemical vapor deposition chamber using a heated gas distribution plate
US7169233B2 (en) * 2003-11-21 2007-01-30 Asm America, Inc. Reactor chamber
WO2010009724A1 (de) * 2008-07-25 2010-01-28 Dr. Laure Plasmatechnologie Gmbh Vorrichtung zur plasmagestützten beschichtung der innenseite von rohrförmigen bauteilen
EP2276057B1 (en) * 2009-05-29 2011-11-02 Roth & Rau AG In-line gas-phase diffusion furnace
US20140262033A1 (en) * 2013-03-13 2014-09-18 Applied Materials, Inc. Gas sleeve for foreline plasma abatement system
TWD169790S (zh) * 2013-07-10 2015-08-11 日立國際電氣股份有限公司 基板處理裝置用氣化器之部分
JP7374899B2 (ja) 2017-12-11 2023-11-07 グラクソスミスクライン、インテレクチュアル、プロパティー、ディベロップメント、リミテッド モジュール式無菌生産システム

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS584811B2 (ja) * 1978-10-31 1983-01-27 富士通株式会社 半導体装置の製造方法
JPS5664441A (en) * 1979-10-30 1981-06-01 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacture of semiconductor device
US4640223A (en) * 1984-07-24 1987-02-03 Dozier Alfred R Chemical vapor deposition reactor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01133728U (ja) * 1988-03-07 1989-09-12

Also Published As

Publication number Publication date
US4803948A (en) 1989-02-14

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