JPS62165933A - Ashing device - Google Patents

Abstract

PURPOSE:To obtain a device suitable for sheet processing at a high speed by mounting a gas outflow section with a plate section, separated from a base in a chamber, attaching a supply takeoff device to the chamber through a gate valve and fitting a cooler to the outflow section and forming an opening to the plate section. CONSTITUTION:An O3+O2 outflow section 22a is arranged oppositely at a set interval to a base plate 205 in a processing chamber 20, and cooled at 50-15 deg.C by a tubular cooler 204, and O3+O2 are ejected from a plate section 200. The plate section is shaped as a locus in which a tubular material is turned horizontally, or the gas is fed uniformly onto a wafer from each hole by using a porous substance plate. The wafer is heated at 150-500 deg.C, the gas is reacted chemically with a film on the upper surface of the wafer and the film is ashed, and an end point is detected from the quantity of CO2 in exhaust gas. A loader 23a and an unloader 23b are disposed on both sides of the chamber 20 through gate valves 224, 225, and the wafer 28 is sucked 10 electrostatically, and forwarded or discharged to or from the chamber 20 by a bar 25. The gas outflow section 200 is moved vertically by screws and a nut mechanism. According to the constitution, a film on the wafer can efficiently be ashed and treated at a high speed.

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to an ashing device (ashing device) for removing a film adhered to a wafer, etc., and in particular, the present invention relates to an ashing device (ashing device) for removing a film adhered to a wafer, etc. Film (hereinafter referred to as resist in Tori 1)
The present invention relates to an ashing device suitable for removing feces by oxidizing them.

[Prior Art] Formation of fine patterns in semiconductor integrated circuits is generally carried out by etching a base film formed on a wafer 1x using a resist film of a perforated polymer formed by exposure and development as a mask.

Therefore, the resist film used as a mask needs to be removed from the surface of the wafer after the etching process. Ashing processing is performed to remove the resist in such a case.

Conoashing process is registry stripping.

It is used for cleaning silicon wafers and masks, removing ink, removing solvent residue, etc., and is suitable for dry cleaning processing in semiconductor processes.

Ashing processing for resist removal is generally performed using oxygen plasma.

In resist ashing using oxygen plasma, a wafer with a resist film is placed in a processing chamber, and the oxygen gas introduced into the processing chamber is turned into plasma by a high-frequency electric field, and the generated oxygen atomic radicals damage the resist material. It utilizes the effect of oxidation, decomposition into carbon dioxide, carbon oxide and water, and vaporization.

However, in the ashing process using oxygen plasma, the wafer is irradiated with ions and electrons accelerated by the electric field existing in the plasma, which adversely affects the electrical characteristics of the conductor integrated circuit. It has the disadvantage of being difficult to understand.

To avoid such drawbacks, UV light (
There is a device that generates oxygen atom radicals by irradiating UV light and performs ashing processing in batch processing. This type of apparatus has the advantage of being able to perform efficient stripping and cleaning without damaging the element, since there is almost no damage to the element due to the electric field compared to plasma processing.

Figure 17 shows conventional ultraviolet light! (((Shows an ashing device using rays.

In the processing chamber 100, a large number of wafers 101, 101...
are arranged vertically at predetermined intervals, and -
1. Ultraviolet light from an ultraviolet light emitting tube 103 installed in a part of the processing chamber 100 is irradiated through a transparent window 102 made of quartz or the like provided on the front surface of the processing chamber 100 to excite oxygen filled in the processing chamber 100. Generates ozone. Oxygen atom radicals generated from this ozone atmosphere are then applied to the wafer 101 to perform an ashing process.

By the way, there is a tendency for the entrance diameter of 1mm wafers to increase, and with this trend, a wafer processing method in which wafers are processed one by one is becoming more common.

[Problems to be Solved] The ashing process using ultraviolet irradiation described in +1if has the advantage of not causing damage to the wafer. Moreover,
Since the action takes place in an ozone atmosphere, the resist ashing speed is 500 to 1500 people/mt.
It is only about n.

However, in single wafer processing suitable for humans [1 diameter], the processing speed is usually 1 μm to 2 μm/min.
With conventional equipment that irradiates ultraviolet rays,
Cannot handle single wafer processing in 1 minute.

In addition, because it uses ultraviolet light, the equipment has to be larger.
However, it has the disadvantage that it is expensive.

[Object of the Invention] The present invention has been made in view of the problems of the prior art. The 171st objective is to provide an ashing device that does not require the use of ultraviolet light or the like.

[L stage for solving the problem] The means in the song device of this invention to achieve the above 1-1 objective are a wafer mounting table installed inside the chamber, and a wafer mounting table of this wafer mounting table. 1. The outlet section is connected to the chamber via a gate valve and is adjacent to the outlet section. It is equipped with a wafer loader/unloader arranged as
The flat plate part is provided with an opening to allow the gas to flow out almost uniformly onto the wafer surface, and a cooling means for cooling the gas is arranged in the outflow part, so that the gas flows out from the opening and onto the wafer surface. The deposited film is oxidized and removed, the ashed wafer is taken out of the chamber by the Uni/S loader/unloader, and the wafer before the ashing process is carried to the wafer mounting table +1if by the wafer loader/unloader. It is said that it will be done.

[Operation] +1 at a position facing the wafer at a predetermined distance.
By providing an ozone outflow section having a plate section to form an ozone + oxygen gas flow space parallel to the wafer between the wafer and the wafer, and cooling the outflowing gas with a cooling means provided at the outflow section, the wafer can be cooled. In addition, it continues to supply new ozone, promotes the oxidation chemical reaction between oxygen atomic radicals and the film deposited on the wafer, and also generates non-radical oxygen (02).
This allows carbon dioxide, carbon oxide, water, etc. generated after the reaction to be moved and discharged from the wafer surface in a vaporized state.

As a result, it is possible to efficiently expose the reaction surface of the film 9 deposited on the wafer I-, for example, a filter film, to oxygen atomic radicals, which have a very strong oxidizing action.

By providing the wafer loader/unloader adjacent to the chamber of the ashing device, it is possible to realize an anosong device suitable for wedge processing at l''+:!1 speed.

[Example] Hereinafter, an example of the present invention will be described in detail using the drawings.

FIG. 1 is a block diagram of an ashing processing system according to an embodiment to which the ashing apparatus of the present invention is applied, and FIG. 2 is a block diagram of another similar embodiment, showing the overall configuration including a wafer transport mechanism. 3 (a) and (b)
) is a concrete explanatory diagram of the electrostatic chuck in the sea urchin/% transport mechanism, in which (a) is a sectional view taken along line II in (b) of the same figure, (b) is a <P side view thereof, and Figure 4 shows the reaction 11.
Figure 5(a) is an enlarged explanatory diagram of the proportions, and Figure 5(b) is a diagram explaining the relationship between reaction and movement by oxygen atom radicals.
and (C) are diagrams each explaining the relationship between the diffusion aperture and the ashing state on the wafer, and FIG. be.

In addition, Fig. 7 shows the surface of the wafer at 1XIL degree 30'C.
Gas flow +7. Figure 8 is a graph explaining the relationship between Ang speed and surface l! of sea urchin/X. +1V
Graph explaining the relationship between the ashing speed and the gear between the diffuser plate and the wafer surface at 300 degrees Celsius, No. 9
The figure is an explanatory diagram showing the relationship between the gas temperature and the renost removal rate, and FIGS. 10(a), (b), (c), and (d) are explanatory diagrams of specific examples of the openings of the diffusion plate, respectively. Figure 11(a),
(b) and (d) are explanatory diagrams of specific examples of the gas cooling structure in the injection part, respectively, and FIG. 12 (a) is
An explanatory diagram of the method of rotating the gas injection rq<, Fig. 12 (
b) is an explanatory diagram of rotating the wafer side; FIG. 13 is an explanatory diagram of the alignment effect when the wafer side is not rotated; FIG. 14 is a block diagram of an embodiment of the ashing processing system for determining the end of the ashing process; FIG. 15 is a graph of changes in the concentration of carbon dioxide in the exhaust gas, and FIG. 16 is a graph illustrating the relationship between the annosong velocity and the ozone concentration.

In FIG. 1, ■ is an ashing processing system, which includes an ashing device 2, an ozone + oxygen gas supply device 3 that supplies oxygen gas containing ozone to the ashing device 2, and υ1 connected to the ashing device 2. -Air device 4
, a wafer mounting table 21 arranged inside the ashing device 2
A ν+1 lowering device 5 for moving the wafer down -Ll, and a temperature controller 6 for controlling the temperature of the wafer by adjusting the heat generation state of the heating device 21a installed in the wafer mounting table 21.

The ozone + oxygen gas supply device 3 is a gas ME Fit
It is equipped with a regulator 3a, an ozone generator 3b, and an oxygen supply source 3C, and controls ozone concentration, gas flow rate, and ashing device 2.
The gas pressure in the (processing chamber) is controlled by these gas flow rate regulators 3a.
, ozone generator 3b, oxygen supply source 3c,
adjusted in relation to

In particular, the ozone concentration supplied to the ashing device 2 is adjusted by the ozone generator 3b and set to a predetermined value.

Further, the wafer mounting table 21 disposed inside the ashing device 2 holds the wafer 28 by suction, and the temperature of the held wafer 28 is maintained at a predetermined value by the temperature controller 6.

The second part of the wafer 28 is 0.5 to 20 mm from its surface.
A cone-shaped injection part 22 is provided that injects ozone + oxygen gas at intervals of about mm,
The wafer mounting table 2 is moved by the lifting device 5 at intervals of 1lif.
1 is set to a predetermined value by J-'y+'. In this case, the injection part 22 side may be moved up and down by an h' lowering device.

The injection RB 22 is made of SO5 (stainless steel) or AJ, and has a disc-shaped diffusion plate portion 22a parallel to the surface of the wafer 28 facing the wafer 28. In the process of loading and unloading the wafer 28, the wafer mounting table 21 is lowered by the lowering device 5, the space between the expansion plate 22 and the wafer 28 is expanded, and the wafer is placed in that space. This is done by the arm of the transport mechanism entering.

Now, for the ashing process, the wafer mounting table 211-
The wafer 28 of
11 old 1, -d, 200'C~350'Cf7)↑,
The mixing ratio of ozone and oxygen in the ozone produced by heating a fixed-value wafer is determined by the ozone generation &j 3
Adjust with e. Then, oxygen gas turns this ozone into gold.

For example, a culm of 3λ to 15 J/min is sent into the chamber of the ashing device 2, which is a processing chamber. The gas pressure inside the ashing device 2 at this time is, for example, 700 to 200 Torr.
Set it within the r culm degree range.

Next, handling of the wafer 28 into and out of the processing chamber of the ashing apparatus 2 will be specifically explained based on the ashing apparatus 30 shown in FIG. Note that this ashing device 30 is different from the ashing device 2 shown in FIG. 1 in that the wafer mounting table is moved by 1 step, but the ejection section is moved by 10 steps.

In FIG. 2, the ashing device 30 includes a processing chamber 20 and loader/unloader sections 23a and 2 disposed on both sides thereof.
3b, and belt conveyance mechanisms 24a and 24b installed inside these loader/unloader sections 23a and 23b, respectively.
It is composed of.

Here, the loader/unloader section 23a and the belt transport mechanism 24'a side will be the side for loading the wafer, and the loader/unloader section 23b and the belt transport mechanism 24b will be the side for unloading the wafer that has undergone the anno/puffer treatment. may be either the import side or the export side. Furthermore, there may be only one loader/unloader section.

Although not shown, the belt conveyance mechanisms 24a, 2
At the opposite end of 4b, cartridges for storing wafers stacked at predetermined intervals are installed, and as the cartridges move +-F, unprocessed wafers are sequentially conveyed from the cartridges by the belt. Mechanism 24a
is sent to the loader/unloader RB23a. The ashed wafers are sequentially stacked and stored in the cartridge from the loader/unloader section 23b via the belt conveyance mechanism 24b.

Now, the processing chamber 20 is made of, for example, SO8, Aλ or TiN.
The chamber 29 has 12 chambers 29 coated with A, etc., and a wafer mounting table 205 is installed at the center inside thereof. The gas injection part 22a is supported on the ceiling side of the chamber 29 by a part of the gas injection part 22a at a predetermined interval.

Here, the gas injection RB 22a is a disc-shaped diffusion plate 200.
The cone r'I < 203 is connected to an ozone + oxygen gas introduction pipe 202 at its center, and the introduction pipe 202 is movably and hermetically surrounded by a metal bellows 201 made of SUS or the like.
The dangerous ozone + oxygen gas is introduced.

204 is a cooler for ozone + oxygen gas that spirally covers the outer circumference of the cone portion 203; ′
! It is fixed to ls 203 with thermally conductive cement or the like. In the cooler 204, the refrigerant is in the cone portion 203.
It is introduced from the bottom of the body, is discharged at one point, and is led to the outside.

On the other hand, as shown in FIG. 4, the diffusion plate 200 has a slit (opening) 31 for blowing out the gas, and uniformly blows the cooled ozone + oxygen gas onto the surface of the wafer 28. put out.

The diffuser plate 200 is supported at three points around its periphery by pole screw mechanisms 231, 232, and 233 at intervals of approximately 120 degrees, and is moved up by one point.

It is driven by pole screw mechanisms 231, 232.
The gears formed on the ball parts 234, 235, and 236 (not shown in the figure) of the motor 233 are connected to the motor 23.
This is done by meshing with a worm gear carved into the rotating shaft 236 of the 0.

Note that the elevating mechanism of the injection part 22a is not a combination of such a motor, a ball screw, and a gear, but may be a mechanism in which the ejecting part 22a is directly moved up and down using an air ring or the like.

At the position shown in the figure, injection m<22a is 1.

In the 'y-+' state (standby position), the wafer 28 is loaded into or unloaded from the wafer mounting table 205. On the other hand, as shown in Fig. 4, the injection r'J
< 22 If a falls, the blowout of the diffuser plate 200 may be 0.5 to several mm or more than 10 meters from the wafer surface.
The interval (reaction position) is about m, and the wafer mounting table 205
is positioned above the wafer mounting table 205, and gas is supplied to the surface of the wafer 28 on the wafer mounting table 205.

Note that a heating device 206 is installed inside the wafer mounting table 205 to heat the wafer mounting table 205. In this example, in addition to the ozone-containing gas, the chamber 29 also contains N2 to cover the gas flow from the diffusion plate 200.
gas is introduced.

Now, 26a is a suction chuck part supported on the tip side of the transfer arm 25a, and 10a is a suction chuck part 2 that partially moves relative to the main body of the suction chuck part 28a.
This is an electrostatic chuck supported by 6a. The figure shows a state in which the wafer 28 is attracted to the electrostatic chuck 10a. In this case, the wafer may be attracted by suction using negative pressure, or may be mechanically clamped or held.

The other end of the transfer arm 25a is fixed to a support 27a disposed in the loader/unloader 7 section 23a, and the transfer arm 25a is a front arm that moves back and forth between the loader/unloader R1<23a and the wafer mounting table 205 of the processing chamber 20. This is a transport mechanism type art. Note that this transfer arm 25a may be constructed of a magnetic 7 cylinder, a mechanical cylinder, or the like.

Here, the reason why the frog leg transport mechanism is used is that the transport mechanism section can be made smaller, and, for example, ashing processing chambers are provided on both sides of the loader/unloader section, so that the support 27a of the frog leg transport mechanism can be rotated. if,
Since the freon bleb transfer mechanism can be directed to the desired chamber side, there is an advantage that wafers can be selectively transferred or unloaded to both chambers.

Furthermore, if a loader/unloader section is provided in a straight line between the belt e-transport mechanism and the chamber, and its support 27a is made rotatable, the wafer can be similarly picked up from the belt transport mechanism side and reversed. It is also possible to transport it to the chamber side, and even in such a case, the entire device can be made compact.

Now, the loader/unloader section 23b is also provided with a similar frog range transfer mechanism type transfer arm A25b, a suction chuck section 26b, its electrostatic chuck 10b, and a support 27b in a symmetrical relationship. In the figure, a processed wafer 28 is attracted to the electrostatic chuck 10b.

Therefore, the wafer mounting table 205 is provided with a plurality of holes 220 for negative pressure suction. In addition, the wafer mounting table 2
Around the 05, a ring plate 222ζ is provided with a plurality of exhaust volumes [1219, 219, 219, 219, 219, 219, 219, 219, 219, 219, 219, 219, 219, 219, 219, 1, 219, 219, 219, 1, 219, 219, 1, 219, 1, 219, 1, 219, 219, 219, 219, 219, 219, 219, 219. This ring plate 222
is fitted into the outer circumferential side of the wafer mounting table 205 at a position slightly below -1- of the wafer mounting table 205.

221 and 223 are exhaust pipes that air the chamber 29, respectively, and are connected to the pump of the exhaust device 4. Two or a plurality of these υi: tracheas 221, 223 are provided so that exhaust air is evenly performed, but the number may be one. Further, 224 and 225 are gate valves, respectively.

Further, 226 and 227 respectively indicate the belt conveyance mechanism 24.
A and 24b are conveyor belts, and 217 and 218 are chambers of the loader/unloader sections 23a and 23b.

Here, the chambers 217 and 218 of the loader/unloader sections 23a and 23b may also be evacuated by 1° according to the internal pressure of the chamber 29 using an empty pump.

Next, to explain the operation of this device, the injection part 22
It is assumed that a is set to the lZ raised state and held in the standby position r,'I, and the valve of the gas inlet Il+ 202 is closed.

When the gate valves 224 and 225 are closed, the inside of the chamber 201 is in a reduced pressure state close to normal pressure.

In addition, in the case of raising and lowering the wafer setting table 21 in FIG.
It will be lowered and set to the standby position. but,
The relationship between the loader/unloader section is the same as that shown in FIG.

Now, in this state, the gate valve 224 is opened, and the electrostatic chunk 10a of the wafer 28 carried from the belt transport mechanism 24a to the loader/unloader section 23a is lowered, and a voltage is applied thereto to chuck the wafer 28 by suction chuck. It is adsorbed by 26a. Then, the electrostatic charger 910a is moved upward M to pink up the wafer 28. Next, the transfer arm 25
a, the attracted wafer 28 is transferred from the loader/unrotor section 23a to the processing chamber 20, positioned on the wafer mounting table 2.51, and the electrostatic chuck 10a is lowered, and the applied voltage is turned off. The wafer 28 is dropped automatically by setting the load to low or zero. Then, a negative pressure 7I is applied to the wafer mounting table 205 side, and the wafer is placed on the wafer mounting table 2051.

Next, after moving the electrostatic chuck 10a by 1-ν11, the transfer arm 25a is contracted and the suction chunk 26a is transferred to the loader/v11.
It is returned to the unloader section 23a. After the suction chuck 28a moves to the loader/unloader section, the gate valve 224
is closed, the injection part 22a is lowered to the reaction position, and the diffusion plate 200 is set at the reaction position shown in FIG.

In the case of the lifting device 2 shown in FIG. -'t+', the wafer 28 is placed at the reaction position.

Here, the temperature of the wafer 28 is monitored, and when it reaches a predetermined processing temperature, the valve of the gas inlet 202 is immediately turned on, and ozone and oxygen are added to the surface of the wafer 28 placed on the wafer mounting table 205. Spray the gas evenly.

As a result, the resist on the wafer 28 is oxidized, and the gases generated by this chemical reaction, such as carbon dioxide, -carbon oxide, and water, are exhausted together with the oxygen after the reaction through the υF trachea 221, 223 by the exhaust device 4. be done.

When the ashing process is completed (for example, 11IIIn~
After several minutes), close the valve of the gas inlet 202,
Move the diffuser plate 200 to the standby position -IJi'- (first
In the figure, the wafer mounting 205 is lowered to the standby position), the gate valve 225 is opened, and the transfer arm 25b is moved from the loader/unloader section 23b to the processing chamber 20.
, and attach the suction chuck 26b to the wafer mounting table 2051.
t, the electrostatic chuck 10b on the tip side is lowered, and a voltage is applied to it. Then, the wafer 28 that has been subjected to the ashing process is adsorbed by the wafer mounting table 205L, and the electrostatic chuck 10b is subjected to a 1-1 field for pick-amplification. After the electrostatic chuck 10a is moved to fJN, the transfer arm 25b is contracted and the processed wafer 128 is transferred to the loader/unloader section 23b.

The wafer thus carried out to the loader/unloader 1<23b is passed from the loader/unloader section 231) to the belt conveyance mechanism 24b, where it is stored in a cartridge and the ashed wafer is taken out of the apparatus. It will be done.

Here, the electrode portion of the electrostatic chuck will be explained. In addition, in FIG. 1, the electrostatic chuck 10a.

10b have the same configuration, in the following description, the electrostatic chuck 10 will be explained, and its electrode portion will be referred to as the electrostatic chuck electrode portion 17.

Now, as shown in FIGS. 3(a) and 3(b), the electrode part 17 of the electrostatic chuck 10 for wafer suction has a semicircular shape with circular depressions RBlla and 12a provided inside the back surface, respectively. It is formed by first and second electrodes 11 and 12 made of a conductor such as metal.

By the way, when automatically transporting wafers, overwhelmingly there are cases where it is required to pick up and transport the wafer from the front side. Therefore, the electrode section 17 is attached as an electrostatic chuck in a state where it is suspended from the wafer transfer device so that the suction surface thereof is located at the bottom.

Here, these first. The second electrode 11.12 is the insulating film 1
3.14, and are arranged with a predetermined gap I] between them. This gap 1] may be left as a void, or an insulator may be inserted therein depending on the structure. The selection may be determined based on the overall structure of the electrostatic chuck 10.

1st. As shown in FIG. 3(a), the second electrodes 11 and 12 are arranged on the outer periphery of a circle with a diameter R of approximately 16 mm and a width W.
■ Leaving a portion, there is a concave depression inside (depth h), and this width W
The portions 15 and 16 serve as adsorption portions 15 and 16 for the conductor wafer. Each of the suction parts 15 and 16 (l for the song)
'I Insulating film 13.14--Insulating film 15a as capital,
16a is provided as a coated layer, and the film thicknesses of these insulating films 15a and lea are determined based on the suction force of the wafer and the like. The thickness of the insulating films 13 and 14 other than this portion is determined with consideration given to ensuring that this electrode portion has sufficient withstand voltage when it comes into contact with other metal portions.

Next, the ashing reaction will be explained in detail according to FIGS. 4, 5(a), and 6.

As shown in FIG. 4, in the ashing process, the ozone supplied from the ozone + oxygen gas supply device 3 is heated inside the injection section 22a (or the same after the injection section 22) as follows. It has become a behavior.

03:02 + 0 In this case, the lifespan of the oxygen source r radical 0 obtained by decomposing ozone is l! ++1 degree, and as shown in Figure 6, around 25 degrees Celsius, it becomes very J(<.

But l! When u1 degree or 1. rises, its)i life rapidly becomes shorter.

On the other hand, the ashing process using oxygen atom radicals is an oxidation chemical reaction, which becomes faster as the l temperature increases by 1° J:I. Moreover, it takes a certain amount of time for the oxygen atomic radicals to act on the wafer surface. Therefore, an important issue is how to efficiently continue to supply oxygen atom radicals to the surface of the wafer 28.

The ashing process proposed in this invention efficiently supplies oxygen atom radicals to the surface of the wafer 28 and quickly removes reaction products from the wafer surface. In the treatment of the synergistic effect of removal and supply of oxygen source r radicals, the ashing rate can be increased to a treatment rate suitable for feces treatment.

Therefore, while supplying oxygen radicals, the reaction product is υ1. It is important to create an adequate gas flow space for removal.

In this embodiment, as shown in FIG.
00.

The distance between the wafer mounting table 205 and the diffusion plate 200 is relatively narrow, and the heating time of the wafer 28 is limited! If u1 degree is set high, the distance from the wafer surface to about 0.5 to several mm will be daytime. Further, the outermost opening position (the position of the sleeve 31a in FIG. 4) is determined so that the gas to be injected is blown outward by 5 mm or more from the outer shape of the wafer 28.

By blowing the gas outward from the outer circumference of the wafer 28 in this way, a negative pressure region is formed by the gas flow on the outer side of the wafer outer circumference, and the generated gas from the center in< side is transported outward from the outer circumference of the wafer. Then, υ1 is produced.

As a result, it is possible to facilitate the supply of ozone and the contact of oxygen atom radicals to the wafer surface, thereby promoting the oxidation reaction.

Now, the ozone + oxygen cooled by the cooler 204 is
For example, it is cooled to about 25 to 50°C.

Therefore, the rate at which oxygen atom radicals are retained inside the cone portion 203 of injection p<22a becomes high.

As soon as ozone (COa, 02 + O) and oxygen (02) are injected from the opening of the diffusion plate 200, they are exposed to a temperature atmosphere, but before their lifespan ends, they reach the wafer surface together with the oxygen, causing damage to the wafer. Him on the surface? Ashing (ashing) of the film that has been

that is, oxidized and removed from the wafer surface).

As shown in Fig. 5(a), carbon dioxide, carbon oxide, and vaporized water generated by ashing are simultaneously
Riding on the flow of oxygen (02) and non-radical ozone (03) ejected from the diffuser plate 200 in the 1-h' conversion, the surface is divided by υ1, and the displacement r of the ring plate 222 is
'l 219 to the exhaust pipes 221, 223, and are sequentially exhausted by the exhaust system 4.

Therefore, an environment can be created in which the surface of the wafer 28 is constantly exposed to oxygen radicals.

In FIG. 5(a), 28a is the surface part of the wafer 28, 28b is the part of the renost coated on the wafer 28, and the arrow 32 is the ozone from the expansion plate 200. ＋It shows the flow of oxygen gas.

Here, the wafer temperature is set to 300'C, and the distance (gap) between the surface of the wafer mounting table 205 and the diffuser plate 200 (on the injection port side) is used as a parameter, and the mark at the opening 1-1 of the diffuser plate 200 is determined. State (jol look, jou 11 two conditions do)
When we measure the Ang speed for the gas flow Lti, we find that for the 6# wafer, 2sλ+]i
In the range of 40 sJI (Sλ: flow rate converted to normal temperature and normal pressure) from 7 onwards, particularly high-speed ashing processing is 1-iJ, and gradually saturates from about 4 osλ/min.

In order to make this flow rate correspond to a general wafer diameter, it is converted into a flow rate per medium area of the wafer, ji1, which is o.

Of~0.25sJImin*cn? becomes.

Furthermore, when the relationship between the gear and the 71777 curvature between the diffuser plate and the wafer surface is measured using the gas flow rate as a parameter at a wafer surface temperature of 300'C, as shown in Figure 8, the gap is 20 mm or more). Here, the characteristic in the direction converging toward a constant value is shown regardless of the gas jet flow 11).

Furthermore, regarding the relationship between the temperature of the gas ejected from the diffusion plate 200 and the lens removal rate, the gap to the wafer (the distance from the surface of the wafer 28 placed on the wafer mounting table 205 to the surface of the diffusion plate 200) 2 mm and the reaction time is 1 min, the characteristics are measured using the gas flow I as a parameter. As shown in Figure 9, when the 17.1 degrees are heated to about 200 degrees Celsius, we get I understand that it is difficult to remove.

Therefore, when the reaction is carried out by heating the wafer side to 200° C. or higher, it is preferable to cool the injected gas (ozone + oxygen). As a particularly preferable range, the outflow gas of the diffusion plate 200 is 4 degrees from 15 to 50 degrees.
It is at ℃.

This agrees with the characteristics of light and ozone decomposition 1 as seen in FIG.

Furthermore, as shown in Figure 16, when we investigate the relationship between ashing speed and ozone concentration, we find that
19+', the ashing speed increases by 1°h'. However, 10 T<'fc't, about % or more!・Then, move toward saturation. Furthermore, this characteristic is
For a 6" wafer, its 711 degrees are at 250 degrees Celsius, and the gas flow: 1 is 5 s, l'/min,
The measurement was performed on a resist hardened by plasma irradiation in an etching ball frame with a chamber internal force of about 700 Torr.

As can be understood from each of the characteristic graphs, by forming a flowing gas space between the wafers and injecting or flowing ozone into the wafers,
Ashing processing at a rate of 1 to several μm/min is effective. This realizes ashing that is suitable for single wafer processing and suitable for processing human diameter wafers.

FIGS. 10(a) to 10(d) are explanatory diagrams of specific examples of a diffusion plate 200 that uniformly injects ozone+oxygen gas onto the surface of a wafer.

FIG. 1O(a) shows four arcuate slits 311 formed circularly and concentrically, and these grooves may be perpendicular to the wafer; Diagonal slots are used to allow gas to flow outward to form a flow.

In FIG. 10(b), a hole 312 is provided in the center of a circle, and slits 313 are arranged radially with respect to the hole 312. In FIG. 10(C), holes 314 are provided radially, and the name tag 314 becomes slightly more visible toward the outside. 1st
FIG. 0(d) shows a case where a sintered alloy 200a is used as a diffusion plate 200, and porous holes 3 called hl are formed on the entire surface of the plate.
15 evenly.

In FIG. 10(e), the injection 1131B is formed in a whirlpool shape, and in FIG. 10(f), a circular small hole 317 is bored in the tll.

Here, in order to examine the effect of uniformly and uniformly outflowing gas from the diffusion plate 200, we will examine the case where holes are sparsely opened as shown in FIG. 10(f), and the case where holes are made sparsely as shown in FIG. In the former case, as shown in Fig. 5(b), the resist j281) has no gas Corresponding to the flow of 32 (Amakawa), he was ashed, and the ashing caused his hitting to be gradual and uneven. On the other hand, when porous pores are uniformly distributed like the latter sintered alloy, the fifth
As shown in Figure (C), uniform ashing is performed.

Therefore, the gas injection [1
This has the advantage that the processing time until complete ashing can be shortened and that the wafer is not easily damaged even if ozone is applied to the wafer surface. In addition, in FIGS. 5(b) and 5(C), the portion indicated by the dotted line is the surface position (thickness) of the resist of the ashing 1) 11.

Now, as seen in the characteristic graphs in Figure 6, etc., gas (
It is better to inject ozone + oxygen from the diffuser plate in a state as cool as possible.

By the way, the distance between the wafer mounting table 205 and the expansion plate 200 is relatively short. On the other hand, the wafer mounting table 205 and the wafer 28 react with l! It is heated by the heating device 206 to 1 degree. Therefore, the diffusion plate 200 is heated by radiant heat emitted from the wafer mounting table 205 and the wafer 28 side, and the temperature of the surface of the diffusion H'7.20O tends to rise by 1-.

As a result, 11. ．． 1 degree is -1-'
i+' I, ``'C The amount of oxygen atomic radicals supplied to the wafer surface will decrease. In particular, if the gap is large, the influence of heat will decrease somewhat, but the movement of oxygen atomic radicals I1.%' liJ Since (y < n), there will be many oxygen radicals whose lifetime will be exhausted before reaching the surface of the wafer 28, including the influence of temperature -1-s1'-.Also, if the gap is too small, , directly affected by the temperature on the side of the wafer mounting table 205, the temperature I-ge1' on the surface of the diffusion plate 200 tends to become more l:'; The 4th and 2nd ascending values are also different.

For this reason, there are more optimal conditions for ashing processing. In the reaction pattern shown in Figure 4,
When the temperature of the wafer is around 200'C to 350°C, the more optimal gap is around 1 to 3mm, and the gas flow is at room temperature and pressure. 6″
For wafers, 5. It is about 5 to 17 s i /mln. Therefore, converting this into a flow rate per single surface area of the wafer, it is 0.03 to 0°1s/min.
* c J.

In addition, carbon dioxide reacted by oxygen atom radicals, -
Considering that reaction products such as carbon oxide and water are carried away from the wafer surface mainly by oxygen (02),
There is a more efficient combination of ozone and oxygen: 11%.

In other words, when ozone (03) is low, the ashing rate (the rate of decrease in time relative to the film thickness) becomes low.
Uniformity deteriorates and efficiency is poor. On the other hand, ozone (03)
If there is a lot of oxygen (02) and less oxygen (02), the rate will be higher, but
Reaction products stagnate on the wafer surface, slowing down the reaction rate.

Taking these points into consideration, the optimal ozone concentration h1
A suitable percentage is 3% to 5% by weight, or about 171%.

Now, taking these matters into account, a specific example of a cooling structure for the injection part will be described below, which injects gas at a temperature as low as possible while uniformly injecting gas.

In the injection part 22b shown in FIG. 11(a), a cooling pipe 204a made of a coiled pipe is also arranged on the inner surface of the diffusion plate 200, and this is communicated with the cooler 204.
This is made to extend in a meandering manner while avoiding the slit 318 for gas injection.

Furthermore, the injection rm 22 b shown in FIG. 11(b) is such that a cooling pipe 204b made of a spiral pipe is provided on the outer surface of the diffusion plate 200 (on the wafer 28 side), and this is communicated with the cooler 204. Similarly, it is made to snake in a meandering manner while avoiding the slit 318. In this case, the cooler 204 disposed around the cone portion 203 does not have to be shown in FIGS. 11(a) and (1).

By doing this, even if there is heat radiation from the wafer mounting table 205 side, the surface of the diffusion plate 200 can be suppressed to a low level, and the l of the gas to be injected can be suppressed. It becomes possible to suppress the iL degree and perform efficient end///g processing with more free conditions.

The injection) ηζ22c shown in FIGS. 11(c) and (d) is not conical but l'El-shaped, and 1
- 8, a dome 22d for gas diffusion is provided, and the gas is diffused in advance for 19 minutes before being sent to the diffusion plate 311 having slits or the diffusion plate of the sintered alloy 200a.

In particular, in FIG. 11(C), a serpentine cooling pipe 204c is built into the cylindrical part, and in FIG.
is filled inside. Although these are not provided with a cooler on the outside, it goes without saying that a cooling pipe may be placed on the outside of the cylinder as in FIGS. 11(a) and (1)).

Next, blow the gas more uniformly onto the wafer surface.
Furthermore, an example in which the wafer and the diffusion plate are rotated relative to each other for the purpose of promoting the oxidation reaction will be explained.

The injection section 33 shown in FIG. 12(a) consists of a diffusion tube 34 and a gas introduction tube 35 communicating at the center thereof, and the gas introduction tube 36 is rotatably located on the Okawa side of the chamber 29. It is pivotally supported.

Here, both ends of the diffusion tube 34 are closed, and on the side facing the wafer 28, jets n36, 36. A plurality of e... are arranged at predetermined intervals. Furthermore, the jet 1137 is placed on the opposite side of the side face of the end (the side that overlaps with the wafer surface), with the back turned to the side crab.
38 is provided, and when gas is injected from there, the diffusion tube 34 rotates by itself due to the reaction. Moreover, the gas injected from both ends is located outside the outer periphery of the wafer 28, and also plays the role of continuously photographing unsinging products outward. In addition, instead of the injection n 38, the diffusion tube 3
A porous material may be used for the lower surface of 4.

In the example shown in FIG. 12(b), the wafer mounting table 205 is supported by a shaft, this shaft is pivotally supported on the floor side of the chamber 29, and the wafer mounting table 205 is rotated by a motor. It is. In addition, the injection part 22a is shown in FIG.
) may be tubular or rod-shaped.

Comparing the effects of using and not using such a rotation operation, we found that when using the rotation method,
The processing time in which the resist on the wafer is divided by υF is shortened.

In other words, if we compare this with the same processing time as the rotational force type but without rotation, as shown in Figure 13, in the case of no rotation, the resist is divided by υ1゛ in the center of the wafer. However, there is a phenomenon in which the remaining resist portion 40 is not removed and remains as a striped pattern in the peripheral area. Note that this was carried out for 6" Ueno 1.

For this reason, it can be said that the rotation process is effective in shortening the ashing process time, and is also effective in ashing the peripheral area of the wafer except for the central area. This is especially effective for people with 6# to 10'' [1-diameter wafers]. In the case of Fig. 12(a), the gas injection part automatically rotates, so the device There is an advantage that the gas is medium-pure, but that much gas must be injected.On the other hand, in the case of FIG. 12(b), the device is somewhat complicated because the wafer mounting table 205 side is rotated. This has the advantage that the amount of gas injected is small.

Next, detection of the end of ashing processing, which is related to overall control when performing single wafer processing, will be described.

As shown in FIG. 14, at the end of the ashing process J', a gas analyzer 1117 is installed in front of the exhaust device 4.

Then, 12, carbon oxide (C
O2) Detection signal corresponding to degree C to end point judgment/control device 8
The concentration of carbon dioxide is monitored, and the ashing process ends when this concentration reaches zero or a predetermined value.
It is determined that the

Here, the end point determination/control device 8 has an internal comparator and a controller configured by a microprocessor, and detects the end point of the process from the comparator that receives the output of the gas analysis; In response, Ano/Fugu device 2. It controls the gas valve of the gas introduction pipe (see gas introduction vibrator 202 in FIG. 2) and the cassette drop device 5 (motor 230 in FIG. 2).

That is, at point 1111, which is the end point detected, a signal is generated to close the valve of the gas introduction vibrator, thereby controlling to stop the gas injection. At the same time, the wafer mounting table 21 is sent down to the 5-+' lowering device 5, and this is controlled to widen the gap between the diffusion plate and the wafer mounting table. In the embodiment shown in FIG. 2, the injection section) is moved to the standby position.

y11 When receiving the standby position setting message from the disembarking device 5, +,
1. At t, the end point determination/control device 8 connects the rotor/unloader unit on the wafer unloading side (loader/unloader unit 2 in FIG.
The ashing device 2 sends a control signal 3 to release the gate valve (gate valve 225 in Fig. 2) communicating with the ashing device 2 (see 3b).
send to. Ashing device 2 that received this message
The gate valve is opened to establish communication between the chamber (see chamber 29 in FIG. 2) and the loader/unloader section on the wafer unloading side.

Next, the end point determination/control device 8 sends out pulsating 4+j'SJ' to the ashing device 2 through the unloading side wafer handling mechanism (transfer arm, 25 +) in FIG.

Upon receiving this u'''J, the ashing device 2 moves the wafer 2
At the same time, the wafer handling mechanism is activated to pick up the wafer 28 on the wafer mounting table 21 (see wafer mounting table 205 in FIG. 2) and carry it out from the chamber. The wafer is then transferred to the belt transport mechanism (
See belt conveyance mechanism 24b in Figure 2! ! Pass the uke to (1).

On the other hand, when the wafer handling mechanism on the unloading side completes unloading the wafer from the chamber, the ashing device 2
sends the completion r signal to the end point determination/control device 8.

Upon receiving this completion signal, the end point determination/control device 8 sends a control signal to the ashing device 2 to close the gate valve (gate valve 225) communicating with the loader/unloader section on the wafer unloading side. Transfer the wafer, close the valve, and loader/unloader 'F'A on the wafer unloading side.
I'll cut it off. Next, the loader/unloader section on the wafer loading side (see loader/unloader section 23a in Figure 2)
A control signal is sent to the unloading device 2 to open the second communicating valve (valve 224 in FIG. 2).

The anno/puffer device 2 opens its valve and communicates the chamber with the loader/unloader section.

Next, the end point determination/control device 8 sends a signal>3 to the ashing device 2 to operate the carry-in side sea urchin/% handling mechanism (transfer arm 25a in FIG. 2).

The ashing device 2 picks up the wafer 28 from the belt conveyance mechanism (see belt conveyance mechanism 24a (4) in FIG. 2) by pulsating the wafer handling mechanism on the carry-in side.
This is carried into the chamber and installed on the wafer mounting table 21 (wafer mounting table 205).

Then, the wafer mounting table 21 attracts and holds this.

When the wafer loading of the wafer handling mechanism on the loading side is completed and its arms return to the loader/unloader, the ashing device 2 sends a loading completion signal -3° to the end point determination/control device 8. Send.

The end point determination/control device 8 sends a control command to close the valve communicating with the loader/unloader section on the wafer loading side to the ashing device 2 at the time when the end point determination/control device 8 receives this Y11 bow. f −' of the wafer mounting table 21
yV (;m (in Fig. 2, the dropout signal of the injection section 22)
Send out.

The ashing device 2, which has received the control signal to close the valve, closes the valve and separates the chamber from the loader/unloader section on the carry-in side. On the other hand, the top 5 of the wafer mounting table 21
'i', receiving the signal 53, the y-lowering device 5 controls the wafer mounting table 21, and controls the gear between the diffusion plate and the wafer mounting table.
Set the gap to the required gap for the reaction (set it to the reaction position).

At the time when the reaction position setting 40'3 is received from the lowering device 5, the end point determination/control device 8 generates a signal to open the valve of the gas introduction pipe and starts the injection of gas. Take control. Then, it monitors υ1 gas and enters the end point determination process.

FIG. 15 is a graph showing a 20 degree change in carbon dioxide in the exhaust gas in this case.

As shown in the figure, the concentration of carbon dioxide gradually increases as the processing time progresses and becomes a constant value.
Under conditions where lk is in the optimum range, the ashing process can be completed within 1 minute for a 6" wafer, and within 1 to several minutes depending on the gap and wafer angle of 111111 degrees and gas flow: 11'. Once completed, its concentration rapidly approaches zero at this point.

Therefore, the end point of the Anno/Fugu treatment can be determined by comparing and detecting the carbon dioxide concentration with a reference value of zero or a constant value close to zero using a comparator.

By the way, the detected gas for the final determination is not limited to carbon dioxide, but water and carbon oxide have almost similar characteristics. Therefore, the end point of the ashing process may be determined by measuring the lil of the gas.

On the other hand, as seen in this graph, the tendency for gas generation to start decreasing from a constant value and then reaching zero is almost the same characteristic for exhaust gas. Therefore, by detecting the change point A of this characteristic or the point B where the characteristic has decreased below a certain value, the end point r can be measured.

The decreased point B is detected by +1'J comparator No.1.
(All you have to do is change the value, r/!llI end point is
The situation can be stabilized by adding a certain amount of time to this detection point.

Further, the detection of the change point A can be easily performed by combining a differential circuit or a peak detection circuit with a comparator.
can be realized.

By the way, when detecting that the JJF gas is below a predetermined value, the gas analyzer 7 and the determination section of the end determination/control device 8 shown in FIG. A detector (gas sensor) that detects the gas at a specific value or within a specific range, and an end point determination circuit (judgment processing using a comparator, logic circuit, or microprocessor) that determines the end point from the detection signal are sufficient. On the other hand, when detecting the change point of tI[gas, l'i1 of a specific gas
A measuring device or sensor that generates a signal corresponding to the signal as a detection signal, or a sensor that only detects the changing state is essential.

As explained above, in the embodiment, the diffusion plate is placed above the wafer, but this is because the wafer is 1-3
In this case, the diffuser plate may be suspended so that the gas is blown from the side to the side of the diffuser plate. You can leave it there.

In short, the arrangement relationship between these is not limited to one line, and it is sufficient that they face each other with a certain interval.

Moreover, any handling mechanism may be used to carry the wafer into and out of the loading/unloading apparatus, and the present invention is of course not limited to the embodiments.

In the embodiment, in order to carry in the wafer, either the wafer 1 mounting table or the diffusion plate is relatively moved to ensure a space for inserting the handling arm.

However, these may also be moved to L-do with the partner in the same ++ or '7.

Furthermore, if a configuration is adopted in which the wafer is sent to the wafer mounting table using a belt transfer mechanism and a pusher, etc., the distance between the diffusion plate and the wafer mounting table can be narrow, and there is no need for an enlarged space into which the handling arm etc. enter. So, Ueno 1
1. of the mounting table or diffuser plate.

The hand movement mechanism is not essential.

In the example, the case where gas is injected is described (11) It is sufficient that only one drop of ozone + oxygen gas flows into the reaction space. Enough.

In addition, in the embodiment, the structure of the injection part is a conical one.
There are cylindrical and tube-shaped ones, but for example, there are disc-shaped ones that are like nozzles and emit ozone +
The gas may be injected or flowed out, and various shapes can be applied.

Therefore, the flat plate section in this specification includes a rod-shaped object whose locus forms an even flow of gas with the deck by rotating it.

A cooler may be used depending on the reaction conditions and is not necessarily necessary. In addition, the structure is based on the case where the refrigerant flows through the pipe, but it is also possible to provide a space with a structure in which the refrigerant flows directly into the injection part, and various liquids and gases such as water and cooling air can be , and even the Bertier effect! J! Cooling may be performed using a cooling metal 5 that uses scent.

The diffusion plate uses a sintered alloy as having uniform porous pores, but porous materials are not limited to metals (various materials such as ceramics can be used). Of course it is possible.

In addition, the sea urchin/% finish during ashing processing! I
As for 11 degrees, the higher it is, the faster the oxidation reaction rate will be.
This is also related to the wafer loading/unloading speed, and does not necessarily have to be set to a high value. Furthermore, considering the value (F Qt 11Sl:1 of ozone), the reaction can be carried out at about room temperature or higher. Furthermore, if the ozone weight of 11% can be set as a commercial value, it is possible to perform ++) even at a value lower than room temperature. However, with current equipment, the ozone generation level of 111% is considered to be around 10 to 13%, which is the limit.

In the example, the description focuses on the resist as the ashing lamp chamber, but as with the conventional technology, such ashing processing can be applied to various things such as removing ink and solvents, and can be used to remove oxidation. Any material may be used as long as it can be removed.

In addition, although the case where ozone is contained in oxygen gas is mentioned, it is not limited to oxygen, but ozone is added to gases that do not react with ozone, especially various non-conforming gases such as N2 + Ar + Ne, etc. It can be used by containing.

[Effects of the Invention As can be understood from the explanation given below, in this invention, an ozone draining product is provided that strikes a flat plate part at a position facing the wafer at a predetermined distance, and the wafer and In between, a gas flow space of ozone and oxygen parallel to the wafer is formed.
By cooling the outflowing gas with a cooling means installed at a distance of 7 m from the outflow, new ozone is continuously supplied to the wafer and the oxidation chemical reaction between the oxygen source R.Ranchal and the film deposited on the wafer is promoted. At the same time, carbon dioxide, -carbon oxide, water, etc. generated after the reaction with non-radical oxygen (02) are transferred from the wafer surface in a vaporized state.

You can make υt come out.

As a result, it is possible to efficiently expose the reactive surface of the film 9 deposited on the wafer to oxygen atomic radicals, which have a very strong oxidizing effect, such as the film of any kind. can.

By providing the wafer loader/unloader adjacent to the chamber of the ashing device, it is possible to realize an ashing device suitable for high-speed single wafer processing.

[Brief explanation of drawings]

FIG. 1 is a block diagram of an ashing processing system according to an embodiment to which the ashing device of the present invention is applied, and FIG.
3(a) and (b) are cross-sectional explanatory views showing the overall configuration including a wafer transport mechanism in another similar embodiment.
4 is a concrete explanatory diagram of the electrostatic chuck in the ueno conveyance mechanism, where (a) is a sectional view taken along line II in (b) of the same figure, (1)) is a plan view thereof, and FIG. , FIG. 5(a) is an enlarged explanatory diagram of the reaction part, and FIG.
C) is a diagram explaining the relationship between the diffusion amount of 1 and the ashing state on the wafer, and FIG. , , is a graph explaining the relationship between 1 degree and 1 degree. Furthermore, Fig. 7 is a graph explaining the relationship between the ashing rate and the gas flow H,1 at a wafer surface temperature of 300°C, and Fig. 8 is a graph showing the gap between the diffusion plate and the wafer surface at a wafer surface temperature of 300°C. 9 is a graph illustrating the relationship between the ashing rate and the resist removal rate, and FIG. 10 (a) is an explanatory graph illustrating the relationship between the gas temperature and the resist removal rate.
(b), (c), (d), (e), and (f) are explanatory diagrams of specific examples of 1) old 1 of the diffuser plate, and Fig. 11 (a),
(+)), (c), and (d) are explanatory diagrams of specific examples of the gas cooling structure in the injection part, respectively, and Fig. 12 (=>)
is an explanatory diagram of the method of rotating the gas injection 1η, the 12th
Figure (b) is an explanatory diagram of rotating the wafer side, Fig. 13 is an explanatory diagram of the Anno7ng effect when the wafer side is not rotated, and Fig. 14
The figure is a block diagram of an embodiment of the A/A processing system that determines the end of the ashing process, Figure 15 is a graph of changes in the concentration of carbon dioxide in the 1J1 gas, and Figure 16 is the ozone concentration. FIG. 17, which is a graph explaining the relationship between the ashing speed and the ashing speed, is an explanatory diagram of a conventional anodizing device using ultraviolet rays. 1... Ashing system, 2.20... Ashing device, 3... Oxygen gas supply device, 3a... Gas flow: Li regulator, 3b... Ozone generator, 3c... Oxygen supply Source, 4...υF air table device 5.
...! ri' lowering device, 6...lhJ degree adjuster, 7...
- Gas analyzer, 8... End point determination/control device, 10a,
10b... Electrostatic chunk, 21... Wafer mounting table, 21 = 1,20 B... Heating device, 22.22a,
22b-gas injection section, 23a, 23b...loader/unloader section, 24a,
24b... Belt conveyance mechanism section, 25a, 25b...
Transfer arm, 26a, 28b... suction chuck, 28... wafer, 31... slitting. q, 'r, r' + Applicant Higashij; Myelectron Co., Ltd. Figure 3 (q) 7 11a 12a Figure 4 Figure 5 (CI), 2 28a
ωq No. 67 Fig. 7 Uzi + Ltl Xゎ℃ Wafer diameter 6E ÷
T7if, i (S2/mIn) Figure 8 Figure 9 Figure 1 I1. I: IXL support (0C) No. 11 (C) No. 12 (a) (b) No. 17 (a) (b) No. 17 (No. 13)

Claims (10)

[Claims] (1) It has a wafer mounting table installed inside the chamber, and a flat plate part located above the wafer mounting table and facing the wafer placed thereon at a predetermined distance from the wafer mounting table, through which ozone-containing gas flows out. , comprising an outflow section and a wafer loader/unloader connected to the chamber via a gate valve and disposed adjacent thereto, the flat plate section having an opening for allowing the gas to flow out substantially uniformly onto the wafer surface. A cooling means for cooling the gas is disposed in the outflow portion, and the gas flows out from the opening to oxidize and remove a film deposited on the wafer surface, and performs an ashing process. The ashing apparatus is characterized in that the wafer is taken out from the chamber by the wafer loader/unloader, and the wafer before ashing is carried into the wafer mounting table by the wafer loader/unloader. (2) The wafer loader/unloader is divided into a wafer loader and a wafer unloader, which are arranged adjacent to each other on both sides of the chamber, and the wafer loader and the wafer unloader each have a suction chuck that suctions the wafer. The ashing device according to item 1. (3) The wafer loader and wafer unloader both have the functions of a wafer loader/unloader, and load wafers from either one and unload the wafer from the other, and the suction chuck is an electrostatic chuck. An ashing device according to claim 2. (4) The ashing device according to any one of claims 1 to 3, wherein the cooling means is disposed on the flat plate portion. (5) The flow space is formed by arranging an outflow part from which ozone-containing gas flows out facing the wafer at a predetermined distance from the wafer, and the cooling means is a tubular cooler. 5. The ashing device according to claim 4, wherein the temperature of the gas when being discharged is 50° C. or lower. (6) The ashing device according to claim 2, wherein the flat plate portion is formed as a locus of a tubular member horizontally rotated. (7) The ashing apparatus according to any one of claims 1 to 6, wherein the wafer is heated. (8) The facing arrangement is characterized in that the outflow portion is at the top, the temperature of the gas to be cooled is in the range of 15 to 50°C, and the heating temperature of the wafer is in the range of 150 to 500°C. The ashing device according to scope 7. (9) Claims 1 to 8, characterized in that the flat plate portion is made of a porous material and placed above the wafer, and the openings are pores of the porous material. The ashing device according to any one of the above. (10) The ashing apparatus according to claim 9, wherein at least one of the wafer and the outflow portion moves up and down.