JPS62161956A - Sputtering device - Google Patents

Abstract

PURPOSE:To facilitate composition control of alloy films and to miniaturize a cathode, by dividing a target into plural segments and by placing a magnet outside the cathode. CONSTITUTION:The cathode body 4 is divided by insulating materials 13 into segments. When a voltage is individually impressed to plural targets 3, an electric field is perpendicularly applied to the target 3 surfaces and cuts a magnetic flux 10 generated from the magnet 1 at right angles, so that electrons undergo cyclotronic movement. Consequently, a plasma density is increased and a velocity of film formation is also increased. The cathode body 4 is divided into segments and the voltage is impressed individually to the segments, so that ternary film can be formed into the desired composition. Owing to the above mechanism, the cathode as a whole is miniaturized and, as a result, the rate of collection of grains sputtered from the target 3 onto a substrate 12 is improved.

Description

DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to an apparatus for forming an alloy film by sputtering.

2. Description of the Related Art Conventionally, the cathode portion of a sputtering apparatus has been constructed as shown in FIG. 2, as shown in, for example, Japanese Patent Publication No. 19319/1983.

A conventional sputtering apparatus will be described below with reference to the drawings. 24 is a cathode body for fixing the magnet 21 and yoke 22, 23 is a target, 25 is a plasma shield, 26 is a cooling water inlet for cooling the target 23, and 27 is a cooling water outlet. 28 is a chamber that supports the cathode body 24 and the substrate holder 31. Further, 32 is a substrate on which a film is formed by sputtering, and is mounted on the substrate holder 31.

The operation will be explained below. The inside of the chamber 28 is evacuated to a degree of vacuum on the order of 10 TOrr using a vacuum pump.

Thereafter, argon gas is introduced and set to approximately 5×10 6 TOrr, and a DC or RF voltage is applied to the cathode body 24 by the power source 29.

This generates plasma within the chamber 28, thereby generating argon ions. In addition, the magnetic field 30 of the magnet 21 generates a region with high plasma density, and the amount of argon ions colliding with the target 23 increases.
A membrane is formed.

Problems to be Solved by the Invention In order to form an alloy film on this cathode, it is necessary to use an alloy for the target 23 or to arrange several types of different materials on the targets 1 and 23 in a mosaic pattern. It will stop happening. In that case, first of all, in the case of an alloy target, the composition ratio of the target must be changed through trial and error in order to obtain the desired composition ratio.
The cost and time involved would be enormous.

Next, when creating a mosaic shape, the desired composition ratio can be obtained without spending much time, but since it is created in a mosaic shape, abnormal discharges are likely to occur, so it is not recommended to apply too much -F power. Can not.

Furthermore, if the target is used many times, the target will gradually be eroded and C will be scraped off, resulting in a problem that the composition ratio will shift.

Therefore, the present invention makes it possible to easily obtain a desired alloy composition by devising the shape of the cathode body.

Means for Solving the Problems In order to solve the above problems, the sputtering apparatus of the present invention has a cathode configured so that the target can be divided into a plurality of sector shapes, each target being insulated, and magnetron discharge. The magnet that generates this is placed outside the cathode body.

action The effect of this technical means is as follows.

That is, by configuring the cathode so that the target can be divided into a plurality of sector shapes, the entire cathode can be made smaller. Further, by making each of them in an insulating state, the voltage that can be applied to the target can be varied, and the composition can be easily controlled. Furthermore,
By placing the magnet that was inside the cathode outside the cathode, the cathode was made more compact.

EXAMPLES Hereinafter, examples of the present invention will be described with reference to the drawings.

FIG. 1a shows a cross-section of a seven-puttering device in one embodiment of the invention. In Figure 1 &, 1 is target 3
This is a magnet that generates a parallel magnetic field 1o on the 0 surface. 4 is a cathode body for attaching target 3, 5
6 is a plasma shield, 6 is a cooling water inlet, 7 is a cooling water outlet, and 9 is a power source for applying RF or DC voltage to the cathode body 4. 8 is a chamber that supports the cathode body 4 and the substrate holder 11. Reference numeral 12 denotes a substrate on which a film is formed by sputtering, and is mounted on the substrate holder 11.

The magnet 1 has a cylindrical magnetic south pole and a north pole concentrically surrounding the south pole. Reference numeral 13 denotes an insulator that insulates the cathode body from the ground and other cathode bodies.

The target 3 is divided into fan shapes as shown in FIG. Note that 2 is a yoke.

The operation of the cathode portion of the sputtering apparatus configured as described above will be explained. By dividing the cathode body 4 by the insulator 13 and applying a voltage to each target 3, an electric field is applied perpendicularly to the surface of the target 30, perpendicular to the magnetic field 1o generated by the magnet 1, and the electrons are transferred to the cyclotron. exercise. Therefore, the plasma density in that part increases and the film deposition rate increases.

When this operation is performed by dividing the cathode body 4 into fan-shaped sections and applying a voltage to each section as shown in FIG. 1A, a ternary film having a desired composition is formed.

However, by making the cathode body 4 fan-shaped, the entire cathode can be made smaller, which improves the collection rate of particles flying out from the target 3 onto the substrate 12.

Note that the number of fan-shaped divisions may be two or more, and the shape of the magnet outside the cathode does not matter as long as it increases the plasma density.

Effects of the Invention As described above, in the sputtering apparatus of the present invention, the cathode body is divided and insulated individually, so voltage can be applied to the cathode body separately, and composition can be controlled when forming a multi-component film. becomes easier.

Also, because it is divided into sectors, it is smaller, and the utilization rate of particles ejected from the target remains the same as normal ones. Furthermore, since the magnet is mounted outside the cathode body, the cathode body becomes thinner in the thickness direction, and the shape of the magnet can be freely selected. Furthermore, the fan shape allows the film thickness distribution to be improved in the same manner as when the cathode is not segmented, and conventional film thickness distribution techniques can be used to obtain a good thickness distribution.

[Brief explanation of drawings]

Figure 1 4. b is a cross-sectional view of a sputtering apparatus according to an embodiment of the present invention and a view of a target viewed from above, and FIG. 2 is a cross-sectional view of a conventional example. 1...Magnet, 3...Target, 4.
...Cathode body, 8...Chamber,
12...Substrate, 13...Insulator. Name of agent: Patent attorney Toshio Nakao and 1 other person 2nd
figure

Claims (1)

[Claims] It has a cathode placed in a chamber, a substrate on which a film is formed by sputtering, and a magnet for generating magnetron discharge placed outside the cathode body, and the cathode is divided into fan shapes, Sputtering equipment each electrically insulated.