JPS62158985A - 熱間静水圧加圧装置 - Google Patents
熱間静水圧加圧装置Info
- Publication number
- JPS62158985A JPS62158985A JP29935785A JP29935785A JPS62158985A JP S62158985 A JPS62158985 A JP S62158985A JP 29935785 A JP29935785 A JP 29935785A JP 29935785 A JP29935785 A JP 29935785A JP S62158985 A JPS62158985 A JP S62158985A
- Authority
- JP
- Japan
- Prior art keywords
- closed
- base plate
- pressure container
- optical
- hot isostatic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000002706 hydrostatic effect Effects 0.000 title claims 2
- 230000003287 optical effect Effects 0.000 claims description 32
- 230000005855 radiation Effects 0.000 claims description 19
- 239000013307 optical fiber Substances 0.000 claims description 18
- 230000005469 synchrotron radiation Effects 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- 238000012545 processing Methods 0.000 claims description 7
- 238000001513 hot isostatic pressing Methods 0.000 claims 3
- 238000000034 method Methods 0.000 description 10
- 238000009529 body temperature measurement Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000003566 sealing material Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Landscapes
- Control Of Temperature (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP29935785A JPS62158985A (ja) | 1985-12-30 | 1985-12-30 | 熱間静水圧加圧装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP29935785A JPS62158985A (ja) | 1985-12-30 | 1985-12-30 | 熱間静水圧加圧装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS62158985A true JPS62158985A (ja) | 1987-07-14 |
JPH0467107B2 JPH0467107B2 (enrdf_load_html_response) | 1992-10-27 |
Family
ID=17871506
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP29935785A Granted JPS62158985A (ja) | 1985-12-30 | 1985-12-30 | 熱間静水圧加圧装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS62158985A (enrdf_load_html_response) |
-
1985
- 1985-12-30 JP JP29935785A patent/JPS62158985A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPH0467107B2 (enrdf_load_html_response) | 1992-10-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
ITFI930046A1 (it) | Forno ad alta temperatura per il trattamento termico e per la sinterizzazione di vari prodotti con recipiente dotato di flangia di tenuta. | |
JPS62158985A (ja) | 熱間静水圧加圧装置 | |
JP5448587B2 (ja) | X線回折計測用の試料ホルダ及びx線回折計測方法 | |
US5246667A (en) | Analytical furnace | |
US4553435A (en) | Elevated transient temperature leak test for unstable microelectronic packages | |
JP2007158106A (ja) | 観察装置 | |
US4702696A (en) | High temperature vacuum furnace | |
George et al. | A high-temperature deformation stage for X-ray synchrotron topography. Applications to dislocation mechanisms in silicon | |
JPH051795Y2 (enrdf_load_html_response) | ||
JP3844332B2 (ja) | 熱間変位測定装置及び測定方法 | |
GB2072337A (en) | Heatable cell for photoacoustic axamination | |
JPH051796Y2 (enrdf_load_html_response) | ||
JPH0334640Y2 (enrdf_load_html_response) | ||
CN214953055U (zh) | 一种灰熔融性测试仪 | |
Su et al. | In situ partial pressure measurements and visual observation during crystal growth of ZnSe by seeded physical vapor transport | |
JPS5933849B2 (ja) | 雰囲気材料試験装置 | |
JPS62162885A (ja) | 熱間静水圧加圧装置 | |
JPH0467136B2 (enrdf_load_html_response) | ||
Damen et al. | A furnace for crystal growth at high gas pressures | |
JP2747085B2 (ja) | 高圧ガス雰囲気中への光エネルギー導入集光装置 | |
Aitken | Mass transport studies in the growth of cdTe crystals by multi-tube physical vapour transport | |
TW202144720A (zh) | 燒結設備 | |
JPH0722139B2 (ja) | 光加熱処理装置 | |
JPS6361884A (ja) | 熱間静水圧加圧装置 | |
CN1127685A (zh) | 超高温烧结热等静压装置 |