JPS62158779A - Infrared absorptive composition - Google Patents

Infrared absorptive composition

Info

Publication number
JPS62158779A
JPS62158779A JP61000100A JP10086A JPS62158779A JP S62158779 A JPS62158779 A JP S62158779A JP 61000100 A JP61000100 A JP 61000100A JP 10086 A JP10086 A JP 10086A JP S62158779 A JPS62158779 A JP S62158779A
Authority
JP
Japan
Prior art keywords
group
composition
light
recording
infrared
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61000100A
Other languages
Japanese (ja)
Other versions
JPH0531902B2 (en
Inventor
Yoshiaki Suzuki
嘉明 鈴木
Masaaki Tsuboi
坪井 當昌
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Holdings Corp
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Priority to JP61000100A priority Critical patent/JPS62158779A/en
Publication of JPS62158779A publication Critical patent/JPS62158779A/en
Publication of JPH0531902B2 publication Critical patent/JPH0531902B2/ja
Granted legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41MPRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
    • B41M5/00Duplicating or marking methods; Sheet materials for use therein
    • B41M5/26Thermography ; Marking by high energetic means, e.g. laser otherwise than by burning, and characterised by the material used
    • B41M5/40Thermography ; Marking by high energetic means, e.g. laser otherwise than by burning, and characterised by the material used characterised by the base backcoat, intermediate, or covering layers, e.g. for thermal transfer dye-donor or dye-receiver sheets; Heat, radiation filtering or absorbing means or layers; combined with other image registration layers or compositions; Special originals for reproduction by thermography
    • B41M5/46Thermography ; Marking by high energetic means, e.g. laser otherwise than by burning, and characterised by the material used characterised by the base backcoat, intermediate, or covering layers, e.g. for thermal transfer dye-donor or dye-receiver sheets; Heat, radiation filtering or absorbing means or layers; combined with other image registration layers or compositions; Special originals for reproduction by thermography characterised by the light-to-heat converting means; characterised by the heat or radiation filtering or absorbing means or layers
    • B41M5/465Infrared radiation-absorbing materials, e.g. dyes, metals, silicates, C black
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41MPRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
    • B41M5/00Duplicating or marking methods; Sheet materials for use therein
    • B41M5/0023Digital printing methods characterised by the inks used
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/244Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising organic materials only
    • G11B7/249Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising organic materials only containing organometallic compounds
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41MPRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
    • B41M5/00Duplicating or marking methods; Sheet materials for use therein
    • B41M5/26Thermography ; Marking by high energetic means, e.g. laser otherwise than by burning, and characterised by the material used
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41MPRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
    • B41M5/00Duplicating or marking methods; Sheet materials for use therein
    • B41M5/26Thermography ; Marking by high energetic means, e.g. laser otherwise than by burning, and characterised by the material used
    • B41M5/30Thermography ; Marking by high energetic means, e.g. laser otherwise than by burning, and characterised by the material used using chemical colour formers
    • B41M5/337Additives; Binders
    • B41M5/3377Inorganic compounds, e.g. metal salts of organic acids
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/244Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising organic materials only
    • G11B7/249Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising organic materials only containing organometallic compounds
    • G11B2007/2491Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising organic materials only containing organometallic compounds as anion

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thermal Transfer Or Thermal Recording In General (AREA)
  • Optical Filters (AREA)
  • Duplication Or Marking (AREA)

Abstract

PURPOSE:To obtain the titled composition which has good solubility ni an organic solvent, good compatibility with, e.g., a binder, a large capacity of absorbing a near-infrared light, and fastness to heat and light, by using a quaternary phosphonium salt of a specified aromatic diol nickel complex. CONSTITUTION:An infrared absorptive composition containing a quaternary phosphonium bis(1,2-benzenedithiolate)nickelate derivative of formula I (wherein R<1>-R<4> are each alkyl or aryl; R is H or CH3; n is 1-4) (e.g., compounds of formulas II and III). This composition has excellent properties such that it is highly soluble in an organic solvent, can be finely dispersed or dissolved well in a printing vehicle, and has a large capacity of absorbing a near infrared light. It also has excellent heat and light resistance. The above-mentioned compound can be easily synthesized and manufactured at a low cost. Therefore this composition can be used, e.g., as an ink for an ink jet printer, and also as a material for thermal recording and an optical disk recording material by means of a laser in which photothermalconversion is utilized.

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は、新規な赤外線吸収性組成物に関し、さらに詳
しくは、波長700〜1500nmの遠赤色光ないし近
赤外光を吸収する赤外線吸収性組成物に関する。
Detailed Description of the Invention (Field of Industrial Application) The present invention relates to a novel infrared absorbing composition, and more specifically, an infrared absorbing composition that absorbs far-red light or near-infrared light with a wavelength of 700 to 1500 nm. Regarding the composition.

(従来の技術) 700−1500nmの波長の遠赤色光を選択的に吸収
する赤外線吸収剤の用途としては光学フィルター材のほ
かに次のような各種の用途がある。 光→熱変換作用を
利用して■光デイスク記録層■レーザによる感熱発色記
録体■光デ・イスク用有機皮膜に使用する。光吸収作用
を利用して■インクジェットプリンタ用インク■バーコ
ードインク(ネ)感光材料のアンチハレーション剤■サ
ウンドトラック用赤外線吸収色素を形成する赤外カプラ
ーlφフォトセンサーのモールドなどに使用することな
どがあげられる。
(Prior Art) Infrared absorbers that selectively absorb far-red light with a wavelength of 700 to 1500 nm have various uses in addition to optical filter materials, as described below. Utilizing the light to heat conversion effect, it is used in ■ optical disk recording layers ■ thermosensitive color recording materials using laser ■ organic coatings for optical disks. By utilizing its light absorption effect, it can be used in inkjet printer inks, barcode inks, antihalation agents for photosensitive materials, infrared couplers that form infrared absorbing pigments for soundtracks, etc. in molds for lφ photosensors, etc. can give.

この中で、レーザ記録フィルムの光吸収剤としては、特
開昭58−16888号、同57−11090号に第四
級アンモニウム塩を有する芳香族ジチオール系ニッケル
錯体を用いることが開示されている。
Among these, the use of an aromatic dithiol-based nickel complex having a quaternary ammonium salt is disclosed in JP-A-58-16888 and JP-A-57-11090 as a light absorbing agent for laser recording films.

また、インクジェットプリンタ用インクにはエチルセロ
ソルブのような溶媒と、赤外線吸収剤としてこの有機溶
媒に溶ける色素が用いられる。この場合、この赤外線吸
収剤は波長740〜900nmの赤外線の光源を用いる
光学的読取装置で読み取る際に有用な化学物であり、従
来このようなインクジェットプリンタ用赤外線吸収剤と
してはニグロシン、クロム錯塩など特開昭56−135
568号に開示されている化合物が用いられている。
Furthermore, ink for inkjet printers uses a solvent such as ethyl cellosolve and a dye that dissolves in this organic solvent as an infrared absorber. In this case, this infrared absorber is a chemical substance that is useful for reading with an optical reading device that uses an infrared light source with a wavelength of 740 to 900 nm. Conventionally, such infrared absorbers for inkjet printers include nigrosine, chromium complex salts, etc. Japanese Patent Publication No. 56-135
The compound disclosed in No. 568 has been used.

次に、従来のカメラなどの光検出装置、あるいは光画像
受光素子などの光センサーなどには主にシリコンが使用
されており、フォトダイオードMOSイメージセンサ、
CCDイメージセンサ、CIDイメージセンサ−などの
形で使われている。
Next, silicon is mainly used in conventional photodetection devices such as cameras, or optical sensors such as optical image receiving elements, and photodiode MOS image sensors,
It is used in the form of CCD image sensors, CID image sensors, etc.

シリコンの分光感度は赤外域の700〜1l100nの
光に対してかなり大きく1分光感度曲線を比視感度曲線
に相似させるには赤外域の光をカットしないとノイズが
大きくなる。
The spectral sensitivity of silicon is quite large for light of 700 to 1l100n in the infrared region, and in order to make the 1 spectral sensitivity curve similar to the specific luminous efficiency curve, the noise will increase unless the light in the infrared region is cut.

従来この種の光検出装置には無機系のガラス、あるいは
有機系近赤外吸収剤(特開昭58−9378号参照)が
用いられていた。
Conventionally, this type of photodetecting device has used inorganic glass or organic near-infrared absorbers (see Japanese Patent Laid-Open No. 58-9378).

(発明が解決しようとする問題点) しかし、第四級アンモニウム塩を有する芳香族ジチオー
ル系ニッケル錯体は有機媒体に対する溶解性が低く、基
板上に塗布する際の組成物中の赤外線吸収剤の濃度を高
くできない、使用しうる媒体が制限されるなどの難点が
あった。また、ジェットプリンタ用インクに用いられた
ニグロシンは初期に可溶化しても長期間放置で析出物が
生じ、クロム錯塩は有機溶剤のみでは微少分散あるいは
溶解しないためさらに水を含有させるか窒素を含む溶解
補助剤を加える必要があった。さらに光検出装置に用い
られた。特開昭58−9378号記載の有機系近赤外吸
収剤は有機溶剤への溶解性が低い、耐光性が十分高くな
いという欠点があり、満足しうるものではなかった。
(Problems to be Solved by the Invention) However, aromatic dithiol-based nickel complexes containing quaternary ammonium salts have low solubility in organic media, and the concentration of the infrared absorber in the composition when coating on a substrate is low. There were drawbacks such as the inability to increase the temperature and the limitations on the media that could be used. In addition, even if nigrosine used in jet printer ink is initially solubilized, precipitates form when left for a long period of time, and chromium complex salts cannot be dispersed or dissolved in organic solvents alone, so they must contain water or nitrogen. It was necessary to add a solubilizer. It was also used in photodetectors. The organic near-infrared absorber described in JP-A No. 58-9378 had the disadvantages of low solubility in organic solvents and insufficient light resistance, and was not satisfactory.

本発明の目的はこれらの赤外線吸収剤の組成物の欠点を
克服し、有機溶媒への溶解度が高くかつバインダーなど
との相溶性のよい赤外線吸収性組成物を提供することで
あり、第二に、近赤外光の吸収能力が大きく、熱および
光に対して堅牢な赤外線吸収性組成物を提供することで
ある。
The purpose of the present invention is to overcome the drawbacks of these infrared absorbing compositions and to provide an infrared absorbing composition that has high solubility in organic solvents and good compatibility with binders, etc. An object of the present invention is to provide an infrared absorbing composition that has a large ability to absorb near-infrared light and is robust against heat and light.

(問題点を解決するための手段) 本発明者らは、h記目的を達成するため種々検討を重ね
た結果、芳香族ジチオール系ニッケル錯体の第四級ホス
ホニウム塩のある種のものが有機溶媒に対する溶解性が
格段に良く、かつ、近赤外光の吸収能力がきわめて大き
いことを見出し、この知見に基づき本発明をなすに至っ
た。
(Means for Solving the Problems) As a result of various studies conducted by the present inventors in order to achieve the object described in h., certain types of quaternary phosphonium salts of aromatic dithiol-based nickel complexes are The inventors have discovered that the solubility in the infrared rays is extremely good and the ability to absorb near-infrared light is extremely large, and based on this knowledge, the present invention has been completed.

すなわち本発明は、 一般式 (式中、R1、、、R4はアルキル基またはアリール基
を示し、Rは水素原子またはメチル基を示し。
That is, the present invention has the following formula: (wherein R1, . . . , R4 represent an alkyl group or an aryl group, and R represents a hydrogen atom or a methyl group.

nは1〜4の整数を示す、)で表わされる四級ホスホニ
ウムビス(1,2−ベンゼンジチオラト)ニッケレート
誘導体を含有することを特徴とする赤外線吸収性組成物
を提供するものである0本発明において赤外線吸収性組
成物とは、光学フィルター材を除外する意味である。
The present invention provides an infrared absorbing composition characterized by containing a quaternary phosphonium bis(1,2-benzenedithiolat) nickelate derivative represented by (n is an integer of 1 to 4). In the present invention, the term "infrared absorbing composition" means excluding optical filter materials.

、上記一般式CI)で表わされる化合物においてR1な
いしR4は、好ましくは炭素数1ないし20のアルキル
基を示しこのアルキル基として、たとえばメチル基、エ
チルノ^、n−ブチル基。
In the compound represented by the above general formula CI), R1 to R4 preferably represent an alkyl group having 1 to 20 carbon atoms, and examples of the alkyl group include a methyl group, an ethyl group, and an n-butyl group.

1so−7ミル基、n−ドデシル基、n−オクタデシル
基などをあげることができる。
Examples include 1so-7mil group, n-dodecyl group, and n-octadecyl group.

この場合、アルキル基はさらに置換されていてもよく1
例えばシアノ基、炭素数1ないし20のアルキル基(た
とえばメチル基、エチル基、n−ブチル基、n−オクチ
ル基など)、炭素数6ないし14の7リール!(たとえ
ばフェニル基、トリ ・ル基、α−ナフチル基など)、
炭素数2ないし12の7シルオキシ基(たとえばアセト
キシ基、ベンゾイルオキシ基またはp−メトキシベンゾ
イルオキシ基など)、炭素数1ないし6のフルコキシ基
(たとえばメトキシ基、エトキシ基、プロポキシ基、ブ
トキシ基など)、アリールオキシ基(たとえば、フェノ
キシ基、トリルオキシ基など)。
In this case, the alkyl group may be further substituted with 1
For example, a cyano group, an alkyl group having 1 to 20 carbon atoms (eg, methyl group, ethyl group, n-butyl group, n-octyl group, etc.), 7 aryl having 6 to 14 carbon atoms! (e.g. phenyl group, tri-l group, α-naphthyl group, etc.),
7-syloxy group having 2 to 12 carbon atoms (for example, acetoxy group, benzoyloxy group or p-methoxybenzoyloxy group), flukoxy group having 1 to 6 carbon atoms (for example, methoxy group, ethoxy group, propoxy group, butoxy group, etc.) , an aryloxy group (e.g., phenoxy group, tolyloxy group, etc.).

アラルキル基(たとえばベンジル基、フェネチル基また
はアニシルノ^など)、アルコキシカルボニル基(メト
キシカルボニル基、エトキシカルボニル基、n−ブトキ
シカルボニル基など)、アリールオキシカルボニル基(
フェノキシカルボニル基、トリルオキシカルボニル基な
ど)、アシル基(アセチル基、ベンゾイル基など)、ア
シルアミ7基(アセチルアミノ基、ベンゾイルアミ7基
など)、カルバモイル基(N−エチル力ルバモイルス1
 N−フェニル力ルバモイルノAなど)、アルキルスル
ホニルアミノ基(たとえば、メチルスルホニルアミノ基
、フェニルスルホニルアミノ基など)、スルファモイル
基、(N−エチルスルファモイル基、N−フェニルスル
ファモイル基など)、スルホニル基(メシル基、トシル
基など)などで置換されていてもよい。
Aralkyl groups (e.g. benzyl, phenethyl or anisyl), alkoxycarbonyl groups (methoxycarbonyl, ethoxycarbonyl, n-butoxycarbonyl, etc.), aryloxycarbonyl groups (
phenoxycarbonyl group, tolyloxycarbonyl group, etc.), acyl group (acetyl group, benzoyl group, etc.), acylamine 7 group (acetylamino group, benzoylamide 7 group, etc.), carbamoyl group (N-ethyl group, etc.), carbamoyl group (N-ethyl group, etc.)
N-phenylsulfonylamino group, etc.), alkylsulfonylamino group (e.g., methylsulfonylamino group, phenylsulfonylamino group, etc.), sulfamoyl group, (N-ethylsulfamoyl group, N-phenylsulfamoyl group, etc.), It may be substituted with a sulfonyl group (mesyl group, tosyl group, etc.).

上記一般式CI)においてR1−R4で表わされるアリ
ール基としては、フェニル基、P−トリル基などをあげ
ることができる。
Examples of the aryl group represented by R1-R4 in the above general formula CI) include a phenyl group and a P-tolyl group.

また R1、、R4は、アルキル基と7リール基が混合
していてもよい。
Further, R1 and R4 may be a mixture of an alkyl group and a 7-aryl group.

R1−R4においては、アルキル基が1個以1゜、アリ
ール基が3個以下がtlfましい。
In R1-R4, it is preferable that the number of alkyl groups is 1 or more and the number of aryl groups is 3 or less.

1−記一般式CI)においてR1−R4は特に好ましく
は炭素a4〜16のアルキル基である。アルキル基とし
ては、低級アルキルが長鎖のものより好ましく、直鎖ア
ルキル基が枝分れのものより好ましく、無置換アルキル
基が置換されたものより好ましい。
In general formula CI), R1-R4 are particularly preferably alkyl groups having from a4 to a16 carbon atoms. As for the alkyl group, lower alkyl groups are preferred over long chain ones, straight chain alkyl groups are preferred over branched ones, and unsubstituted alkyl groups are preferred over substituted ones.

1111記一般式(I)で表わされる四級ホスホニウL
1ビス(l、2−ベンゼンジチオラト)ニンケレート誘
導体の製造は次のようにして行うことができる。
1111 Quaternary phosphonium L represented by general formula (I)
The 1bis(l,2-benzenedithiolat)ninchelate derivative can be produced as follows.

無水エタノールに1.2−ベンゼンジチオール誘導体を
溶かし、これをKOHで中和する。この溶液にニッケル
塩のエタノール溶液を加え、次に第四級ホスホニウム塩
の溶液を加え、空気中(又は、酸素を吹き込みつつ)か
くはんし、生成した沈殿をろ過する。副生ずる無a塩(
カリウム塩)を除くため、アセトンなどの有機溶媒で抽
出した後、溶媒を留去すれば、粗結晶が得られる。これ
を例えばアセトン−アルコールなどから再結晶する。
A 1,2-benzenedithiol derivative is dissolved in absolute ethanol, and this is neutralized with KOH. To this solution is added an ethanol solution of a nickel salt, then a solution of a quaternary phosphonium salt, stirred in air (or while blowing oxygen), and the precipitate formed is filtered. Non-a-salt as a by-product (
To remove potassium salt), crude crystals are obtained by extracting with an organic solvent such as acetone and then distilling off the solvent. This is recrystallized from, for example, acetone-alcohol.

前記一般式CI)で表わされる化合物のうち好ましいも
のを例示すれば次の通りであるが1本発明はこれらの例
示化合物に限定されるものではないことはもちろんであ
る。
Preferred examples of the compounds represented by the general formula CI) are as follows; however, it goes without saying that the present invention is not limited to these exemplified compounds.

なお、下記式中 CxH2x。1は直鎖状の炭素数Xの
アルキル基を意味する。
In addition, in the following formula, CxH2x. 1 means a linear alkyl group having X carbon atoms.

これらの化合物の吸収極大(λwax )とモル吸光イ
系数(εwax 、1mmoビ1−clI−1単位)は
次の通りである。
The absorption maximum (λwax) and molar absorption number (εwax, 1 mmo bi1-clI-1 unit) of these compounds are as follows.

第1表 、(発明の赤外線吸収性組成物は、前記一般式(I)で
表わされる化合物を、適宜に結合剤中に含有させてなる
組成物である。
Table 1: (The infrared absorbing composition of the invention is a composition in which the compound represented by the general formula (I) is appropriately contained in a binder.

結合剤としては、特に制限はなく、組成物として赤外線
吸収性を発揮させるものであれば有機、無機の区別なく
用いることができる。そのような結合剤としては、プラ
スチックスのような高分子材ネ1.ガラスのような無機
材車1などがあげられる。
There are no particular restrictions on the binder, and any binder can be used regardless of whether it is organic or inorganic, as long as it exhibits infrared absorbing properties as a composition. Such binders include polymeric materials such as plastics.1. Examples include inorganic vehicles such as glass.

またこの結合剤中には必要により溶媒を使用できる。好
ましい溶媒としてはアセトン、メチルエチルケトン、メ
チルイソブチルケトン、クロロホルム、塩化メチレン、
メタノール、エタノール。
Further, a solvent can be used in this binder if necessary. Preferred solvents include acetone, methyl ethyl ketone, methyl isobutyl ketone, chloroform, methylene chloride,
methanol, ethanol.

トルエン、酢酸エチル、酢酸イソアミル、アセトニトリ
ル、エチルセロソルブ、ジメチルホルムアミドなどの有
機溶媒があげられる。
Examples include organic solvents such as toluene, ethyl acetate, isoamyl acetate, acetonitrile, ethyl cellosolve, and dimethylformamide.

次に本発明の赤外線吸収性組成物を光記録媒体に用いる
場合の実施態様を説明する。
Next, an embodiment in which the infrared absorbing composition of the present invention is used in an optical recording medium will be described.

光記録媒体はノ、(本市には基板と記録層とから構成さ
れるものであるが、さらに目的に応じて基板ににド引き
層をまた記録層−Lに保護層を設けることができる。
Optical recording media (hereinafter referred to as optical recording media) consist of a substrate and a recording layer, but depending on the purpose, the substrate may be provided with a drag layer and the recording layer L may be provided with a protective layer. .

基板としては使用レーザに対して透明であれば既知のも
のを任意に使用することができる。その代表的な例には
ガラスまたはプラスチックがあリ、プラスチックとして
はアクリル、ポリカーボネート、ポリスルホン、ポリイ
ミド、ポリエステルなどが用いられる。その形状はディ
スク状、カード状、シート状、ロールフィルム状など種
々のものが可能である。
Any known substrate can be used as long as it is transparent to the laser used. Typical examples include glass or plastic, and examples of the plastic include acrylic, polycarbonate, polysulfone, polyimide, and polyester. Its shape can be various, such as a disk, card, sheet, or roll film.

ガラスまたはプラスチック基板には記録時のトランキン
グを容易にするために案内溝を形成させてもよい、また
ガラスまたはプラスチック基板にはプラスチックバイン
ダーまたは無機酸化物、無機硫化物などの下引き層を設
けてもよい、基板よりも熱伝導率の低い下引き層が好ま
しい。
A guide groove may be formed on the glass or plastic substrate to facilitate trunking during recording, and a plastic binder or a subbing layer such as an inorganic oxide or inorganic sulfide may be provided on the glass or plastic substrate. An undercoat layer having a thermal conductivity lower than that of the substrate is preferable.

記録層は、赤外線吸収剤単独またはそれと他の材料との
組合せそれ自体により構成されるもの、あるいは反射層
と前記赤外線吸収剤を含有する光吸収層によって構成さ
れるものに分けられる。この赤外線吸収剤単独またはそ
れと他の材料との組合せによって構成される記録層は該
赤外線吸収剤を溶媒に溶解させ、塗布する方式や基板に
蒸着する方式、樹脂溶液と混合して塗布する方式、他の
色素との混合溶液を塗布する方式、他の色素とともに樹
脂溶液に溶解させて塗布する方式などによって形成され
る。
The recording layer can be divided into one consisting of an infrared absorber alone or a combination thereof with other materials, and one consisting of a reflective layer and a light absorbing layer containing the infrared absorber. The recording layer composed of the infrared absorber alone or in combination with other materials can be prepared by dissolving the infrared absorber in a solvent and coating it, by vapor depositing it on the substrate, or by mixing it with a resin solution and coating it. It is formed by applying a mixed solution with other pigments, or by dissolving it together with other pigments in a resin solution and applying it.

樹脂としては、PVA、PVP、ポリビニルブチラール
、ポリカーボネート、ニトロセルロース、ポリビニルホ
ルマール、メチルビニルエーテル、無水マレイン酸共屯
合体、スチレン−ブタジェン共重合体等既知のものが用
いられ、赤外線吸収性組成物中における樹脂に対する前
記一般式[I]で表わされる赤外線吸収剤の重量比は0
゜01以1;であることが望ましい、他の色素、例えば
トリアリールメタン系色素、メロシアニン色素、シアニ
ン色素、アゾ色素、アントラキノン色素など半導体レー
ザの波長域以外に吸収をもつものを用いると、゛ト導体
レーザだけでなく、He−Neレーザなどでも記録でき
るので好適である。
As the resin, known resins such as PVA, PVP, polyvinyl butyral, polycarbonate, nitrocellulose, polyvinyl formal, methyl vinyl ether, maleic anhydride copolymer, and styrene-butadiene copolymer are used. The weight ratio of the infrared absorber represented by the general formula [I] to the resin is 0.
If other dyes, such as triarylmethane dyes, merocyanine dyes, cyanine dyes, azo dyes, anthraquinone dyes, etc., which have absorption outside the wavelength range of the semiconductor laser are used, it is desirable that Not only a conductor laser but also a He-Ne laser or the like can be used for recording, which is suitable.

この記録層は1層又は2層以上設ける。One or more recording layers are provided.

記録層の膜厚は1通常0 、 Ol gm−I ILm
The thickness of the recording layer is 1 usually 0, Ol gm-I ILm
.

好ましくは0.08〜0 、8 、Bmの範囲である。Preferably it is in the range of 0.08 to 0.8.Bm.

反射読出しの場合は特に好ましくは読出しに使用するレ
ーザ波長の174の奇数倍である。
In the case of reflective readout, it is particularly preferably an odd multiple of 174 of the laser wavelength used for readout.

半導体レーザまたはHe−Neレーザなどの反射層を設
ける場合は、ノ、(板に反射層を設は次の二の反射層の
上に前述したような方式によって記録層を設けることに
よるか、あるいは基板に記録層を設け、次いでこの上に
反射層を設けるかのいずれかの方υ;がある。
When providing a reflective layer for a semiconductor laser or He-Ne laser, etc., (the reflective layer is provided on the plate by providing a recording layer on the next two reflective layers by the method described above, or There are two methods: providing a recording layer on the substrate and then providing a reflective layer thereon.

反射層は蒸着法、スパッタリング法、イオンブレーティ
ング法などの他の次のような方法によっても作ることが
できる。
The reflective layer can also be formed by other methods such as vapor deposition, sputtering, and ion blating.

例えば水溶性樹脂(PVP、PVAなど)に金属塩また
は、金hA錯塩を溶解させ、さらに。
For example, a metal salt or a gold hA complex salt is dissolved in a water-soluble resin (PVP, PVA, etc.), and further.

還元剤を加えた溶液を基板に塗布し、50℃〜150″
C好ましくは60℃〜100℃で加熱乾燥させることに
よって形成される。
Apply a solution containing a reducing agent to the substrate and heat it to 50℃~150''
C is preferably formed by heating and drying at 60°C to 100°C.

樹脂に対する金属塩または金属錯塩の量はffl量比で
0.1−10好ましくは0.5〜1.5である。この際
、記録層の膜厚は金属粒子反射層が0.01−0.1層
mでありそして光吸収層が0.01〜1μmの範囲が適
当である。
The amount of metal salt or metal complex salt to resin is 0.1-10, preferably 0.5-1.5 in terms of ffl amount ratio. In this case, the appropriate thickness of the recording layer is 0.01 to 0.1 m for the metal particle reflective layer and 0.01 to 1 m for the light absorption layer.

金属塩または金属錯塩としては、硝酸銀、シアン化銀カ
リウム、シアン化金カリウム、銀アンミン錯体、銀シア
ン錯体、金塩または金シアン錯体などを使用できる。還
元剤としてはホルマリン。
As the metal salt or metal complex salt, silver nitrate, potassium silver cyanide, potassium gold cyanide, silver ammine complex, silver cyanide complex, gold salt, or gold cyanide complex can be used. Formalin is used as a reducing agent.

酒石酸、酒石酸塩、還元剤1次亜燐酸塩、水素化硼素ナ
トリウム、ジメチルアミンポランなどを使用できる。還
元剤は金属塩または金属錯m・1モルに対し0.2〜1
0モル好ましくは0.5〜4モルの範囲で使用できる。
Tartaric acid, tartrate, reducing agent primary hypophosphite, sodium borohydride, dimethylamine porane, etc. can be used. The reducing agent is 0.2 to 1 per mole of metal salt or metal complex m.
It can be used in an amount of 0 mol, preferably 0.5 to 4 mol.

光記録媒体において、情報の記録はレーザなどのスポッ
ト状の高エネルギービームをノ、(板を通しであるいは
基板と反対側より記録層に!に号射することにより行わ
れ、記録層に吸収された光が熱に変換され、記録層にピ
ット(穴)が形成される。
In optical recording media, information is recorded by emitting a spot-shaped high-energy beam such as a laser onto the recording layer (through the plate or from the opposite side of the substrate), which is absorbed by the recording layer. The emitted light is converted into heat, forming pits (holes) in the recording layer.

また情報の読み出しはレーザビームを記録の閾値エネル
ギー以下の低出力で照射し、ピット部とピットが形成さ
れていない部分の反射光量の変化により検出する。
Further, information is read by irradiating a laser beam with a low output power below a recording threshold energy, and detecting a change in the amount of reflected light from a pit portion and a portion where no pits are formed.

また1本発明の赤外線吸収性組成物を、色分離フィルタ
ー、あるいはセンサーモールドなどに川いる場合には、
例えば特開昭57−22209号公報の記載を参考にし
て実施することが出来る。
In addition, when the infrared absorbing composition of the present invention is used in a color separation filter or sensor mold,
For example, it can be carried out with reference to the description in Japanese Patent Application Laid-Open No. 57-22209.

本発明の赤外線吸収剤の少なくとも一つを使用して、ア
クリル系またはメタアクリル系樹脂、フェノール樹脂、
変性フェノール樹脂、ケトン樹脂、ポリエステル樹脂、
ウレタン系樹脂、シリコン系樹脂の一種または二種以、
ヒの樹脂中に溶解させ、これを塗布することにより赤外
線遮断フィルターを形成することが出来る。
Acrylic or methacrylic resin, phenolic resin,
Modified phenolic resin, ketone resin, polyester resin,
One or more types of urethane resin, silicone resin,
An infrared cutoff filter can be formed by dissolving it in a resin and applying it.

赤外線吸収剤と樹脂の含有重量比は樹脂1部に0.00
1〜0.5部より好マシくは0.01〜0.2ff6で
あるが、この重量比は赤外線吸収剤の赤外域の分子吸光
係数および赤外線吸収剤と掛脂との相溶性、塗布厚また
はモールディングの厚さにより決定される。
The weight ratio of infrared absorber to resin is 0.00 to 1 part of resin.
0.01 to 0.2ff6 is better than 1 to 0.5 parts, but this weight ratio depends on the molecular extinction coefficient of the infrared absorber in the infrared region, the compatibility between the infrared absorber and the grease coat, and the coating thickness. Or determined by the thickness of the molding.

溶剤としては赤外線吸収剤および樹脂の少なくとも一つ
を溶解するものが用いられる。これらはジクロルメタン
、クロロホルムのような塩素系溶剤、酢酸エチル、酢酸
イソアミルなどのエステル系溶剤、アセトン、メチルエ
チルケトン、メチルイソブチルケトンなどのエステル系
溶剤、エチルアルコール、ブチルアルコールなどのアル
コール、ピリジン、ジメチルホルムアミド、ジメチルア
セトアミドなどの含窒素溶剤などである。
The solvent used is one that dissolves at least one of the infrared absorber and the resin. These include chlorinated solvents such as dichloromethane and chloroform, ester solvents such as ethyl acetate and isoamyl acetate, ester solvents such as acetone, methyl ethyl ketone, and methyl isobutyl ketone, alcohols such as ethyl alcohol and butyl alcohol, pyridine, dimethylformamide, These include nitrogen-containing solvents such as dimethylacetamide.

次に本発明の赤外線吸収性組成物をインクジェットイン
クに用いる場合の実施態様について述べる。
Next, embodiments in which the infrared absorbing composition of the present invention is used in an inkjet ink will be described.

有機溶剤を溶媒に用いるインクジェットインクは主に静
電加速型、静電空気流式などに用いられ、いずれもイン
クに高圧パルスを印加してインク流またはインク小滴の
形成を可能にさせねばならない、これにはインクの電気
的性質のみならず、表面張力、粘度などの流動性に関係
する物性値も問題となり、特開昭49−50935%)
や特開昭56−135568号公報に記載されている方
法に準じて実施することができる。
Inkjet inks that use organic solvents as solvents are mainly used in electrostatic acceleration type, electrostatic air flow type, etc., both of which require applying high-pressure pulses to the ink to enable ink flow or ink droplet formation. This problem involves not only the electrical properties of the ink, but also the physical properties related to fluidity such as surface tension and viscosity;
It can be carried out according to the method described in JP-A-56-135568.

インクジェットインクとしては、赤外線吸収剤を用い、
溶剤としてはエチルセロソルブ、トルエン、エタノール
、n−ブタノール、エチルメチルケトン、メチルインブ
チルケトン、ジクロルメタン、トリエタノールアミン、
ジメチルホルムアミド、イソアミルアセテートなどに代
表される有機溶剤を用い、これに粘度調節のためにグリ
セリン、金属石齢などを加える。
Inkjet ink uses an infrared absorber,
Solvents include ethyl cellosolve, toluene, ethanol, n-butanol, ethyl methyl ketone, methyl imbutyl ketone, dichloromethane, triethanolamine,
Organic solvents such as dimethylformamide and isoamyl acetate are used, and glycerin and metallurgy are added to adjust the viscosity.

含有には粘度が常温で10cp、以下、比抵抗がlXl
0 −IXIO”Ω・cmになるように有機溶剤と粘度
調節剤の組成比を選ぶ。
The content has a viscosity of 10 cp at room temperature and a specific resistance of lXl.
The composition ratio of the organic solvent and the viscosity modifier is selected so that it becomes 0 - IXIO"Ω·cm.

溶剤に対する赤外線吸収剤の含有比は溶剤1ffr。The content ratio of the infrared absorber to the solvent was 1 ffr of the solvent.

是部に対し、赤外線吸収剤o、ot−o、a部であり、
常温において好ましくは溶解し、あるいは少なくともト
均粒子¥0.81Lm以下に微分散していなければなら
ない、場合によっては該インク中にdf視光線を吸収す
る色素も加えてよい。
For this part, infrared absorber o, ot-o, a part,
A pigment that absorbs df visual rays may also be added to the ink, as the case may be, which should preferably be dissolved at room temperature or be finely dispersed to at least a uniform particle size of 0.81 Lm or less.

(発明の効果) 本発明において四級ホスホニウムビス(l、2−ベンゼ
ンジチオラト)ニッケレート誘導体は有機溶媒への溶解
性が高く、印刷用ビヒクル中へも良好に微少分散あるい
は溶解し、近赤外光の吸収能力が大きいという優れた性
質を有する。
(Effects of the Invention) In the present invention, the quaternary phosphonium bis(l,2-benzenedithiolat) nickelate derivative has high solubility in organic solvents, is well finely dispersed or dissolved in printing vehicles, and has a near-red It has an excellent property of having a large ability to absorb external light.

また、本発明の赤外線吸収性組成物は、耐熱性、耐光性
に優れる。さらに本発明の四級ホスホニウムビス(l、
2−ベンゼンジチオラト)ニッケレート誘導体は合成が
容易であり、低コストで製造できるという実用1優れた
利点を有する。
Further, the infrared absorbing composition of the present invention has excellent heat resistance and light resistance. Furthermore, the quaternary phosphonium bis(l,
2-Benzenedithiolat) nickelate derivatives have excellent practical advantages in that they are easy to synthesize and can be produced at low cost.

従って本発明の赤外線吸収性組成物は、インクジェット
プリンタ用インクなどの外、光→熱交換を利用したレー
ザによる感熱発色、感熱記録、光デイスク記録材料とし
て使用される。
Therefore, the infrared absorbing composition of the present invention can be used as an ink for inkjet printers, as well as for thermal coloring by laser using light->heat exchange, thermal recording, and optical disk recording material.

(実施例) 次に本発明を実施例に基づきさらにJt細に説明する。(Example) Next, the present invention will be explained in further detail based on examples.

なお、以下において「部」は特に記載のない限り「改闇
部」を意味する。
In addition, in the following, "section" means "revised section" unless otherwise specified.

参考例1 〈例示化合物(2)の合成〉水醜化カリウム
16gを無水エタノール200にlに溶かし、この溶液
にベンゼンジチオール20gを加え、10分間室温でか
くはんした0次いで、これに塩化ニッケル、六水和物1
7gを無水エタノール200m1に溶かした溶液を加え
たのち室温でさらに30分間かくはんした。この溶液に
テトラ−n−ブチルホスホニウムプロミド50gを無水
エタノール200 m lに溶かした溶液を室温で加え
る。加え終ってから、更に室温で2時間かくはん後、析
出した暗緑色結晶をろ過し、初めに水、次にエタノール
で洗って風乾した。
Reference Example 1 <Synthesis of Exemplified Compound (2)> 16 g of potassium water chloride was dissolved in 200 liters of absolute ethanol, 20 g of benzenedithiol was added to this solution, and the mixture was stirred at room temperature for 10 minutes. Japanese food 1
A solution of 7 g dissolved in 200 ml of absolute ethanol was added, and the mixture was further stirred at room temperature for 30 minutes. A solution of 50 g of tetra-n-butylphosphonium bromide dissolved in 200 ml of absolute ethanol is added to this solution at room temperature. After the addition was completed, the mixture was further stirred at room temperature for 2 hours, and the precipitated dark green crystals were filtered, washed first with water and then with ethanol, and air-dried.

これを熱アセトン−エタノールから再結晶させて、例示
化合物(2)を得た。収量27g、融点145〜148
℃。
This was recrystallized from hot acetone-ethanol to obtain Exemplary Compound (2). Yield 27g, melting point 145-148
℃.

参考例2 (例示化合物(3)の合成)水醜化化カリウ
ム36gを無水エタノール600tnlに溶かし、この
溶液にトルエン−3,4−ジチオール50gを加え、1
0分間室温で攪拌した0次いでこれに、塩化ニッケル・
六水和物36.8gを無水エタール400m1に溶かし
た溶液を加えたのち室温でさらに30分間攪拌した。
Reference Example 2 (Synthesis of Exemplified Compound (3)) 36 g of water-ugly potassium was dissolved in 600 tnl of absolute ethanol, 50 g of toluene-3,4-dithiol was added to this solution, and 1
This was then stirred at room temperature for 0 minutes, followed by nickel chloride.
A solution of 36.8 g of hexahydrate dissolved in 400 ml of anhydrous ethal was added, and the mixture was further stirred at room temperature for 30 minutes.

この溶液に、テトラ−n−ブチルホスホニウムプロミド
111gを無水エタノール300mJLに溶かした溶液
を室温で加える。加え終ってから、さらに室温で2時間
攪拌後、析出した暗緑色結晶を濾過し、初めに水、次に
エタノールで洗って風乾した。これを熱アセトン−エタ
ノールから再結晶させて例示化合物(3)を得た。収F
&50g、融点142〜144℃。
A solution of 111 g of tetra-n-butylphosphonium bromide dissolved in 300 mJL of absolute ethanol is added to this solution at room temperature. After the addition was completed, the mixture was further stirred at room temperature for 2 hours, and the precipitated dark green crystals were filtered, washed first with water and then with ethanol, and air-dried. This was recrystallized from hot acetone-ethanol to obtain exemplified compound (3). Collection F
&50g, melting point 142-144°C.

参考例3 〈例示化合物(6)の合成)水酸化カリウム
36gを無水エタノール600m見に溶かし、この溶液
にトルエン−3,4−ジチオール50gを加え、10分
間室温で攪拌した0次いでこれに、塩化ニッケル・六水
和物36.8gを無水エタール400mMに溶かした溶
液を加えたのち室温でさらに30分間攪拌した。
Reference Example 3 (Synthesis of Exemplified Compound (6)) 36 g of potassium hydroxide was dissolved in 600 m of absolute ethanol, 50 g of toluene-3,4-dithiol was added to this solution, and the mixture was stirred at room temperature for 10 minutes. A solution of 36.8 g of nickel hexahydrate dissolved in 400 mM of anhydrous ether was added, and the mixture was further stirred at room temperature for 30 minutes.

この溶液に、ヘキサデシルトリブチルホスホニウムプロ
ミド230gを50℃の無水エタノール300mjlに
溶かした溶液を加える。加え終ってから、さらに室温で
2時間攪拌後、析出した暗緑色結晶を濾過し、初めに水
、次にエタノールで洗って風乾した。これを熱エタノー
ルから再結晶させて例示化合物(6)を得た。収量43
g、融点56〜60℃。
To this solution is added a solution of 230 g of hexadecyltributylphosphonium bromide dissolved in 300 mjl of absolute ethanol at 50°C. After the addition was completed, the mixture was further stirred at room temperature for 2 hours, and the precipitated dark green crystals were filtered, washed first with water and then with ethanol, and air-dried. This was recrystallized from hot ethanol to obtain exemplified compound (6). Yield 43
g, melting point 56-60°C.

参考例4 〈例示化合物(7)の合成)水酸化カリウム
36gを無水エタノール600m1に溶かし、この溶液
にトルエン−3,4−ジチオール50gを加え、10分
間室温で攪拌した0次いでこれに、塩化ニッケル・六水
和物36.8gを無水エタール400mJlに溶かした
溶液を加えたのち、室温でさらに30分間攪拌した。こ
の溶液にベンジルトリブチルホスホニウムプロミド12
7gを無水エタノール360m!Lに溶かした溶液を室
温で加える。加え終ってから。
Reference Example 4 (Synthesis of Exemplified Compound (7)) 36 g of potassium hydroxide was dissolved in 600 ml of absolute ethanol, 50 g of toluene-3,4-dithiol was added to this solution, and the mixture was stirred at room temperature for 10 minutes. - After adding a solution of 36.8 g of hexahydrate dissolved in 400 mJl of anhydrous ethal, the mixture was further stirred at room temperature for 30 minutes. Add benzyltributylphosphonium bromide 12 to this solution.
7g of absolute ethanol 360m! Add the solution in L at room temperature. After adding.

さらに室温で2時間攪拌後、析出した暗緑色結晶をi!
!過し、初めに水、次にエタノールで洗って風乾した。
After further stirring at room temperature for 2 hours, the precipitated dark green crystals were collected in i!
! filtered, washed first with water and then with ethanol, and air-dried.

これを熱アセトンから再結晶させて例示化合物(7)を
得た。収量63g、融点213〜215℃。
This was recrystallized from hot acetone to obtain exemplified compound (7). Yield 63g, melting point 213-215°C.

本発明に用いられる他の例示化合物も参考例1から4と
同様の方法で合成できた。
Other exemplary compounds used in the present invention were also synthesized in the same manner as in Reference Examples 1 to 4.

実施例1 例示化合物(2)       1部 油溶性青色染ネ4         o、7pエチルセ
aソルブ       51 1.2−ベンツインチアゾロン (防カビ剤)  0.001部 グリセリン         3部 上記成分を均質に混合し、得られた組成物は。
Example 1 Exemplified Compound (2) 1 part Oil-soluble blue dye 4 o, 7p Ethylcea Solv 51 1.2-Benzinthiazolone (mold inhibitor) 0.001 part Glycerin 3 parts The above components were mixed homogeneously. , the resulting composition is.

比抵抗lO3Ω・Cm粘度4cp、である、このインク
組成物をインクジェット記録装置にかけ、良好な画像が
得られ、これは半導体レーザ(830部m)を光源とす
る読取装置で読取りが可能であった。
This ink composition, which has a specific resistance of 1O3Ω・Cm and a viscosity of 4cp, was applied to an inkjet recording device, and a good image was obtained, which could be read by a reading device using a semiconductor laser (830 parts m) as a light source. .

実施例2 インアミルアセテート      7部例示化合物(2
)         0.5部油溶性染料(オイルブラ
ックHBB)0.5部金属セッケン         
 0.05部上記成分を均質に混合し、得られたインク
組成物は、比抵抗107Ω・Cm粘度5cp、でインク
ジェット記録装置にかけ良好な画像が得られ。
Example 2 Inamyl acetate 7 parts Exemplary compound (2
) 0.5 parts Oil-soluble dye (Oil Black HBB) 0.5 parts Metal soap
The ink composition obtained by homogeneously mixing 0.05 part of the above components and having a specific resistance of 107 Ω·Cm and a viscosity of 5 cp was applied to an inkjet recording device to obtain a good image.

これは半導体レーザ(830部m)を光源とする読取装
置で読取りが可能であった。
This could be read with a reading device using a semiconductor laser (830 parts m) as a light source.

実施例3 例示化合物(3)           1gニトロセ
ルロース        066gジクロルメタン  
        7m愛上記組成の溶液をガラス板に回
転塗布し、40℃で乾燥し、厚さ0.40gmの記録層
を得た。
Example 3 Exemplified compound (3) 1g nitrocellulose 066g dichloromethane
A solution having the above composition was spin-coated onto a glass plate and dried at 40°C to obtain a recording layer with a thickness of 0.40 gm.

波長780nmにおける反射率および吸収率はそれぞれ
14%および25%であった。
The reflectance and absorption at a wavelength of 780 nm were 14% and 25%, respectively.

こうして得られた記録媒体に波長780nm。A wavelength of 780 nm was applied to the recording medium thus obtained.

照射面で4mW、ビーム径1.6gmの半導体レーザで
IMH2で信号を記録したところ、0.41L秒の照射
(1,6nJ/pit)で直径1.0pmのピットが形
成された。この記録媒体を温度60℃、室内光中、湿度
90%で1ケ月保存したが、記録および読み出しの特性
の変化はなかった。
When a signal was recorded with IMH2 using a semiconductor laser with a beam diameter of 1.6 gm and a power of 4 mW on the irradiation surface, a pit with a diameter of 1.0 pm was formed with 0.41 L seconds of irradiation (1.6 nJ/pit). This recording medium was stored for one month at a temperature of 60°C, indoor light, and humidity of 90%, but there was no change in the recording and reading characteristics.

実施例4 例示化合物(J)           1gポリカー
ボネート樹脂      1.OgC,1,7シー7ド
ブルー83(C,1,42830)  1 、2 gl
、2−ジクロルエタン        12ml上記組
成の溶液を表面硬化したアクリル板に回転塗/Iil、
、60℃で乾燥し厚さ0.4gmの記録層を得た。波f
< 800 n mにおける反射率およびまた波長63
0nmにおける吸収率はそれぞれ13%および60%で
あった。この記録媒体を照射面で6mW、ビーム径1.
6終mの波長800nmの半導体レーザビームで0.4
MHzで信号を記録したところt、og秒の照射(6,
0nJ/pit)で直径1.0pmのビットが形成され
た。またこの記録媒体にHe−Neレーザを用いてビー
ム径1.64m記録面でのエネルギー5mWで、4MH
zの信号を記録したところo、4g秒の照射(1,6n
J/pit)で1.0μmのビットが形成された。
Example 4 Exemplified Compound (J) 1g Polycarbonate resin 1. OgC, 1, 7 Seed 7 Blue 83 (C, 1, 42830) 1, 2 gl
, 2-dichloroethane 12ml A solution of the above composition was spin-coated on a surface-hardened acrylic plate/Iil,
, and dried at 60° C. to obtain a recording layer with a thickness of 0.4 gm. wave f
Reflectance at <800 nm and also wavelength 63
The absorption rates at 0 nm were 13% and 60%, respectively. This recording medium was heated at 6 mW on the irradiation surface and with a beam diameter of 1.
0.4 with a semiconductor laser beam with a wavelength of 800 nm at 6 m
When the signal was recorded at MHz, the irradiation time of t,og seconds (6,
A bit with a diameter of 1.0 pm was formed at 0 nJ/pit). In addition, using a He-Ne laser for this recording medium, the beam diameter was 1.64 m and the energy on the recording surface was 5 mW, 4 MHz.
When the signal of z was recorded, o, 4g seconds of irradiation (1,6n
A bit of 1.0 μm was formed with J/pit).

実施例3と同様にして保存テストを行ったが特性の変化
はなかった。
A storage test was conducted in the same manner as in Example 3, but there was no change in characteristics.

実施例5 例示化合物(2)           l gニトロ
セルロース        0.7gジクロルメタン 
        20mfLL記組成の塗布液をガラス
板に回転塗布し、40℃で乾燥し、厚さ0.401Lm
の記録層を得た。波長830nmにおける反射率および
吸収率はそれぞれ15%および65%であった。
Example 5 Exemplified compound (2) l g Nitrocellulose 0.7 g dichloromethane
A coating solution of 20mfLL composition was spin-coated onto a glass plate, dried at 40°C, and a thickness of 0.401Lm was obtained.
A recording layer was obtained. The reflectance and absorption at a wavelength of 830 nm were 15% and 65%, respectively.

こうして得られた記録媒体に波長830nm、照射面で
4mW、ビーム径1.6μmの半導体レーザでIMHz
で信号を記録したところ、0.3p秒の照射(1,2n
J/pit)で直径1.01Lmのビットが形成された
。この記録媒体を温度60℃、室内光中、湿度90%で
1ケ月保存したが、記録および読み出しの特性の変化は
なかった。
The thus obtained recording medium was heated to IMHz using a semiconductor laser with a wavelength of 830 nm, 4 mW on the irradiation surface, and a beam diameter of 1.6 μm.
When the signal was recorded at 0.3 ps irradiation (1,2n
A bit with a diameter of 1.01 Lm was formed. This recording medium was stored for one month at a temperature of 60°C, indoor light, and humidity of 90%, but there was no change in the recording and reading characteristics.

実施例6 例示化合物(2)           l gポリカ
ーボネート極脂      0.7gC,1,アシッド
ブルー83(C,1,42830)  1 、2 gl
、2−ジクロルエタン        12m文上記組
成の溶液を表面硬化したアクリル板に回転塗布し、60
℃で乾燥し厚さ0.4gmの記録層を得た。波長830
nmにおける反射率および吸収率はそれぞれ16%およ
び56%であった。
Example 6 Exemplified compound (2) l g Polycarbonate super fat 0.7 g C,1, Acid Blue 83 (C,1,42830) 1,2 g
, 2-dichloroethane 12m A solution of the above composition was spin-coated on a surface-hardened acrylic plate, and
It was dried at .degree. C. to obtain a recording layer with a thickness of 0.4 gm. wavelength 830
The reflectance and absorption in nm were 16% and 56%, respectively.

また波長630nmにおける吸収率はそれぞれ13%お
よび68%であった。この記録媒体を照射面で6mW、
ビーム径1.6JLmの波1830nmの半導体レーザ
ビームで0.4M)IZで信号を記録したところ0.3
終秒の照射(1,8n J / p i t )で直径
1.0膳mのピットが形成された。またこの記録媒体に
He−Neレーザを用いてビーム111.6JLm記録
面でのエネルギー5mWで、4MH2の信号を記録した
□ところ0.4μ秒の照射(1,6nJ/pit)で1
.0pmのピットが形成された。
Moreover, the absorption rates at a wavelength of 630 nm were 13% and 68%, respectively. 6mW on the irradiated surface of this recording medium,
When a signal was recorded with a 1830 nm semiconductor laser beam with a beam diameter of 1.6 JLm at 0.4 M) IZ, the result was 0.3
After a final second of irradiation (1,8 nJ/pit), pits with a diameter of 1.0 m were formed. In addition, a 4MH2 signal was recorded on this recording medium using a He-Ne laser with a beam of 111.6JLm and an energy of 5mW on the recording surface.
.. A pit of 0 pm was formed.

実施例5と同様にして保存テストを行ったが特性の変化
はなかった。
A storage test was conducted in the same manner as in Example 5, but there was no change in characteristics.

実施例7 次の組成の液をポリカーボネート円板に回転塗布して、
厚さO−IILmの乾燥膜厚の下引層を得た。
Example 7 A solution with the following composition was spin-coated onto a polycarbonate disk.
A dry undercoat layer having a thickness of O-IILm was obtained.

セルロースアセテートブチレー)  0.8gアセトン
           32m9゜これに例示化合物(
2)を含む次の組成の液例示化合物(2)      
     l gポリビニルホルマール      0
.7gジクロルメタン          logを回
転塗布して厚さ0.4xの乾燥膜厚の記録層を得た。さ
らにこの」―に銀を厚さ0.t4に真空蒸着し、記録媒
体をつくり、銀の面を向い合せにして、スペーサーを円
板の中心部と周囲に入れて二つの円板状の記録媒体をサ
ンドイッチにして接合した記録媒体を得た。
Cellulose acetate butylene) 0.8g acetone 32m9゜To this, exemplified compounds (
Liquid exemplary compound (2) of the following composition containing 2)
l gPolyvinyl formal 0
.. A recording layer having a dry film thickness of 0.4x was obtained by spin coating 7g dichloromethane log. Furthermore, this layer is coated with silver to a thickness of 0. t4 to create a recording medium, with the silver surfaces facing each other, spacers were placed in the center and around the discs, and two disc-shaped recording media were sandwiched and joined together to obtain a recording medium. Ta.

これに、ポリカーボネート板側より波1830nmのビ
ーム径1.61部mの半導体レーザビームを照射面で6
mWで照射し0.7#L秒の照射(4,2nJ/5ec
)で直径0.91部mのピットが形成された。
In addition, a semiconductor laser beam with a wave of 1830 nm and a beam diameter of 1.61 parts m was applied to the irradiation surface from the polycarbonate plate side.
Irradiated with mW and irradiated for 0.7#L seconds (4.2nJ/5ec
), a pit with a diameter of 0.91 part m was formed.

この記録媒体を室内光中80℃、90%で2ケ月保存し
たが記録および読み出しの特性の劣化は殆どなかった。
This recording medium was stored in room light at 80° C. and 90% for two months, but there was almost no deterioration in the recording and reading characteristics.

実施例8 例示化合物(2)         1 、0 gポリ
ビニルホルマール      0.7gジクロルメタン
         12m見上記組成の溶液をアルミニ
ウムを0.08部mの厚さに蒸着したポリカーボネート
樹脂板に回転塗布し、厚さ0.67%mの光吸収層を得
た。
Example 8 Exemplified Compound (2) 1.0 g Polyvinyl formal 0.7 g Dichloromethane 12 m A solution of the above composition was spin-coated onto a polycarbonate resin plate on which aluminum had been vapor-deposited to a thickness of 0.08 parts m. A light absorption layer of 67%m was obtained.

波長830nmにおける反射率および吸収率は16%お
よび64%であった。この記録媒体に波長830nmの
半導体レーザを用い照射面エネルギー6mW、ビーム径
1 、6 gmでノふ板側より2MHzの信号を記録し
たところ0.51Lsecの照射時間で(3,0nJ/
pit)で直径0.87℃mのピットが形成された。こ
の記録媒体を60℃、湿度90%で1ケ月保存後も記録
特性および記録されたピットの再生特性が劣化しなかっ
た。
The reflectance and absorption at a wavelength of 830 nm were 16% and 64%. Using a semiconductor laser with a wavelength of 830 nm on this recording medium, a 2 MHz signal was recorded from the nozzle plate side with an irradiation surface energy of 6 mW and a beam diameter of 1.6 gm.
A pit with a diameter of 0.87°C was formed. Even after this recording medium was stored for one month at 60° C. and 90% humidity, the recording characteristics and the reproduction characteristics of the recorded pits did not deteriorate.

実施例9 ニトロセルロース        0.4gジクロルメ
タン         lomjL上記組成の液をアク
リル板に回転塗布し下引き層をつくり、これに例示化合
物(2)を真空蒸着して、厚さ0.2μmの層を得た。
Example 9 Nitrocellulose 0.4g dichloromethane lomjL A liquid with the above composition was spin-coated on an acrylic plate to form an undercoat layer, and exemplified compound (2) was vacuum-deposited onto this to obtain a layer with a thickness of 0.2 μm. .

これにゼラチン0.5gを水10m1に溶かした液を回
転塗布して厚さ0.57%mの保護層をつけた。基板側
より830 nmの波長のレーザビームを実施例5と同
様に照射し、o、sIL秒の照射(2,OnJ/pit
)で直径0.91部mのピットが形成された。この記録
材料を室内光中で、温度60℃、湿度90%で1ケ月保
存したが特性には変化がなかった。
A protective layer having a thickness of 0.57% m was applied to this by spin coating a solution prepared by dissolving 0.5 g of gelatin in 10 ml of water. A laser beam with a wavelength of 830 nm was irradiated from the substrate side in the same manner as in Example 5, and the irradiation was performed for o, sIL seconds (2, OnJ/pit).
), a pit with a diameter of 0.91 part m was formed. This recording material was stored in room light at a temperature of 60° C. and a humidity of 90% for one month, but there was no change in characteristics.

実施例10 2−7ニリノー3−メチル−6−N−シクロヘキシル−
N−メチルアミノフルオラン2 、4部。
Example 10 2-7nilino-3-methyl-6-N-cyclohexyl-
2.4 parts of N-methylaminofluorane.

2−アニリノ−3−クロロ−6−ジニチルアミノフルオ
ラン2.4部(発色剤二ロイコ染料)、例示化合物(3
)0.2j’j’llをジイソプロピルナフタレン24
部に溶解し、芯物質となる溶液を調製した。
2.4 parts of 2-anilino-3-chloro-6-dinithylaminofluorane (color former dileuco dye), exemplified compound (3
)0.2j'j'll of diisopropylnaphthalene24
A solution to be used as a core substance was prepared by dissolving the mixture in the following parts.

ざらにキシリレンジイソシアネート・トリメチロールプ
ロパン(3:l)付加物18部とメチレンクロライド1
7部を添加し、溶解した。
Zaraani xylylene diisocyanate/trimethylolpropane (3:l) adduct 18 parts and methylene chloride 1
7 parts were added and dissolved.

このM色剤の溶液を、ポリビニルアルコール3.5部、
ゼラチン1.7部および1.4−ジ(ヒドロキシエトキ
シ)ベンゼン2.4iが水58部に溶解している水溶液
に添加して20℃の温度で乳化分散させ、平均粒径3I
Lmの乳化液を得た。乳化液に水100部を加えて[手
しながら60℃に加温し、2時間後に発色剤、着色防止
剤および紫外線吸収剤を芯物質に含有するマイクロカプ
セル液を得た。
This M colorant solution was mixed with 3.5 parts of polyvinyl alcohol,
It was added to an aqueous solution containing 1.7 parts of gelatin and 2.4 parts of 1,4-di(hydroxyethoxy)benzene dissolved in 58 parts of water and emulsified and dispersed at a temperature of 20°C to obtain an average particle size of 3I.
An emulsion of Lm was obtained. 100 parts of water was added to the emulsion and heated to 60° C. by hand. After 2 hours, a microcapsule solution containing a color former, a color inhibitor, and an ultraviolet absorber in the core substance was obtained.

別に、顕色剤としてビスフェノールA20部を5%ポリ
ビニルアルコール水溶液lOO部に加えてサンドミルで
約24時間分散し、平均3ILmのビスフェノールAの
分散液を得た。
Separately, 20 parts of bisphenol A as a color developer was added to 100 parts of a 5% polyvinyl alcohol aqueous solution and dispersed in a sand mill for about 24 hours to obtain a dispersion of bisphenol A having an average of 3 ILm.

f’Jもれたマイクロカプセル液5部およびビスフェノ
ールA分散液3部を混合して塗布液とした。  この塗
布液を平滑な−L賀紙(50g/m”)の表面に塗布し
、40℃の温度で30分間乾燥して、乾燥重琶が7g/
m″の感熱記録層を設けた。
5 parts of f'J leaked microcapsule liquid and 3 parts of bisphenol A dispersion were mixed to prepare a coating liquid. This coating solution was applied to the surface of smooth -Laga paper (50 g/m") and dried at a temperature of 40°C for 30 minutes.
A thermosensitive recording layer of m'' was provided.

このようにして、マイクロカプセルに含有されてなる感
熱記録シートAを製造した。
In this way, thermosensitive recording sheet A containing microcapsules was produced.

また別に例示化合物(3)を添加しない感熱記録シート
Bを作製した。
Separately, a heat-sensitive recording sheet B to which exemplified compound (3) was not added was prepared.

次に、得られた各感熱記録シートを用いて感熱記録を行
なった。
Next, thermal recording was performed using each of the obtained thermal recording sheets.

感熱記録シートをG IIモード感熱プリンター(パナ
ファックス7200、日立製作所(株)製)に装填し、
サーマルヘッドを作動させて記録シート上に熱記録した
ところ下記のようにいずれの感熱記録シートにも黒色の
鮮明な画像が得られた。
Load the thermal recording sheet into a G II mode thermal printer (Panafax 7200, manufactured by Hitachi, Ltd.),
When thermal recording was performed on the recording sheets by operating the thermal head, clear black images were obtained on all of the heat-sensitive recording sheets as shown below.

感熱記録シー)A  感熱記録シートB(例示化合物布
)  (例示化合物無)発色濃度   1.20   
  1.09着色(カブ  0.11     0.1
0す)濃度 実施例11 ヘキサハイドロフタル酸70g、テトラグリシジルイソ
シアヌレ−)20g、CX−221(チッソ(株)社製
、商品名)30g、イミダゾール0.15gを混合した
可視光透過樹脂に例示化合物(2)の赤外線吸収剤0.
3gを溶解させてなる樹脂組成物(A)を用いてカメラ
の光検出装置のシリコンダイオードをモールドした。
Thermal recording sheet) A Thermal recording sheet B (exemplified compound cloth) (No exemplified compound) Color density 1.20
1.09 coloring (turnip 0.11 0.1
0) Concentration Example 11 Illustrated in a visible light transmitting resin mixed with 70 g of hexahydrophthalic acid, 20 g of tetraglycidyl isocyanurate, 30 g of CX-221 (manufactured by Chisso Corporation, trade name), and 0.15 g of imidazole. Infrared absorber of compound (2) 0.
A silicon diode for a photodetector of a camera was molded using the resin composition (A) obtained by dissolving 3 g of the resin composition (A).

モールドは150℃程度に加温したモールド金型にシリ
コンダイオードをセットし、樹脂組成物(A)をダイオ
ードの表面にの厚さ2mm程度になるように流し込み5
分間硬化させ、樹脂組成物    ゛(A)でモールド
されたシリコンダイオードを金型より取り出し150℃
で約2時間さらに硬化させ行なった。
A silicon diode is set in a mold heated to about 150°C, and the resin composition (A) is poured onto the surface of the diode to a thickness of about 2 mm.
After curing for minutes, the silicon diode molded with the resin composition (A) was removed from the mold and heated to 150°C.
It was further cured for about 2 hours.

実施例12 厚さ0.5mmの透明ガラス基板りに例示化合物(2)
、熱硬化性アクリル樹脂およびジメチルホルムアミドを
1.5:8:3(屯ニー比)で含有する組成液を塗布し
て厚さ3ルmの近赤外線吸収用樹脂膜を形成し、150
℃、20分間加熱して硬化させて赤外線遮断層を形成し
た。
Example 12 Exemplary compound (2) on a transparent glass substrate with a thickness of 0.5 mm
A composition liquid containing a thermosetting acrylic resin and dimethylformamide in a ratio of 1.5:8:3 (tun-knee ratio) was applied to form a near-infrared absorbing resin film with a thickness of 150 m.
C. for 20 minutes to form an infrared blocking layer.

この赤外線遮断層上にスパッタリング法により窒化クロ
ム層を50OAの厚さに被着し、さらにその上にクロム
層を150OAの厚さに被着させた0次いでこのクロム
層上にAZ−1450レジスト(米国シラプレー社製)
を塗布後、所定のホトマスクにより露光して現像、乾燥
を行ない1次いで硝酸セリウムアンモン系のエツチング
液で露出しているクロム層、窒化クロム層をエツチング
して除去した。その後、レジスト層を剥離して赤外線遮
断層上に所定のパターンをもったフォトシールド層を形
成する。こ、のフォトシールド層はガラス面からの反射
率が15%以下となるためフレアーの問題はなくなる。
A chromium nitride layer was deposited on this infrared blocking layer to a thickness of 50 OA by sputtering, and a chromium layer was further deposited on top of this to a thickness of 150 OA. (Manufactured by Silapray, USA)
After coating, the film was exposed to light using a predetermined photomask, developed and dried, and then the exposed chromium layer and chromium nitride layer were removed by etching with a cerium ammonium nitrate based etching solution. Thereafter, the resist layer is peeled off to form a photoshield layer having a predetermined pattern on the infrared blocking layer. This photoshield layer has a reflectance of 15% or less from the glass surface, so there is no flare problem.

次に、フォトシールド層をもった赤外線遮断層上に、カ
ゼイン−重クロム酸アンモニウムからなる水溶性感光液
を0.8#Lmの膜Hに塗布、乾燥後所定のホトマスク
を正確に位置合せして密着。
Next, a water-soluble photosensitive solution consisting of casein-ammonium dichromate was applied to the film H of 0.8#Lm on the infrared blocking layer with the photoshield layer, and after drying, a predetermined photomask was accurately aligned. Close contact.

露光し、温水により現像、所定パターンをもった被染色
層を形成し、この被染色層を赤染色浴により染色し、R
の着色層を形成する0次いで、所定の防染処理を行なっ
た後、前記と同様の方法により、水溶性感光液を0.8
4mの膜厚に塗布、乾燥、露光、現像後、緑色染色浴に
よる染色を行なって所定パターンをもったGの着色層を
形成し、2色目の着色層を形成した。さらに、2色11
の着色層の形成方法と同様の方法により、青色染色浴を
用いて所定パターンをもった3色目のBの着色層を形成
した。こうして、所定パターンをもったR、G、Bの着
色層からなる色分離フィルタ一層が得られる。その後、
この色分離フィルタ一層上にアクリル樹脂をIILmの
膜厚に塗布し、保護膜を形成した0色分離フィルターの
チップサイズは固体撮像素子の感光部のエリアのサイズ
とした。
It is exposed to light and developed with hot water to form a layer to be dyed with a predetermined pattern, and this layer to be dyed is dyed in a red dyeing bath.
Next, after carrying out a prescribed resist dyeing treatment, a water-soluble photosensitive solution was applied to
After coating to a thickness of 4 m, drying, exposure, and development, dyeing was performed using a green dyeing bath to form a G colored layer having a predetermined pattern, and a second color colored layer was formed. In addition, 2 colors 11
A colored layer of the third color B having a predetermined pattern was formed using a blue dyeing bath in the same manner as in the method for forming the colored layer. In this way, a color separation filter layer consisting of R, G, and B colored layers having a predetermined pattern is obtained. after that,
An acrylic resin was applied to a thickness of IILm on one layer of this color separation filter, and the chip size of the color separation filter with a protective film formed thereon was set to the size of the photosensitive area of the solid-state image sensor.

この色分離フィルターは700nm以Eの長波長光の遮
断能力の優れるものであった。
This color separation filter had an excellent ability to block long wavelength light of 700 nm or more.

なお、上記において用いたR、G、Hの染色浴組成は次
のとおりである。
The compositions of the R, G, and H dye baths used above are as follows.

赤色染色浴 カヤノールミーリングレッドR3 (日本火薬社性)          1部酢酸   
          3部 水                    100部
緑色染色浴 ブリリアントインドブルー (ヘキスト社製)          1部スミノール
イエローMR (住友化学社製)           1部酢酸  
             3部水         
              100部青色染色浴 カヤノールシアニン6B
Red dyeing bath Kayanol Milling Red R3 (Nippon Kapaku Co., Ltd.) 1 part acetic acid
3 parts water 100 parts Green dye bath Brilliant India Blue (manufactured by Hoechst) 1 part Suminol Yellow MR (manufactured by Sumitomo Chemical) 1 part acetic acid
3 parts water
100 parts blue dyeing bath kyanol cyanine 6B

Claims (1)

【特許請求の範囲】 一般式 ▲数式、化学式、表等があります▼ (式中、R^1〜R^4はアルキル基またはアリール基
を示し、Rは水素原子またはメチル基を示し、nは1〜
4の整数を示す。)で表わされる四級ホスホニウムビス
(1,2−ベンゼンジチオラト)ニッケレート誘導体を
含有することを特徴とする赤外線吸収性組成物。
[Claims] General formula▲ Numerical formula, chemical formula, table, etc.▼ (In the formula, R^1 to R^4 represent an alkyl group or an aryl group, R represents a hydrogen atom or a methyl group, and n represents 1~
Indicates an integer of 4. ) An infrared absorbing composition comprising a quaternary phosphonium bis(1,2-benzenedithiolat) nickelate derivative represented by:
JP61000100A 1986-01-04 1986-01-04 Infrared absorptive composition Granted JPS62158779A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61000100A JPS62158779A (en) 1986-01-04 1986-01-04 Infrared absorptive composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61000100A JPS62158779A (en) 1986-01-04 1986-01-04 Infrared absorptive composition

Publications (2)

Publication Number Publication Date
JPS62158779A true JPS62158779A (en) 1987-07-14
JPH0531902B2 JPH0531902B2 (en) 1993-05-13

Family

ID=11464678

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61000100A Granted JPS62158779A (en) 1986-01-04 1986-01-04 Infrared absorptive composition

Country Status (1)

Country Link
JP (1) JPS62158779A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62246590A (en) * 1986-04-17 1987-10-27 Mitsubishi Chem Ind Ltd Dithiophenolate based complex and optical recording medium containing said complex
JPH0326593A (en) * 1989-06-16 1991-02-05 Eastman Kodak Co Infrared ray absorbing squaleirylium dye for dye donating element which is used for laser induction dye heat transfer
JPH0363185A (en) * 1989-06-20 1991-03-19 Eastman Kodak Co Infrared absorption nickel-dithiolene dye complex for dye donor element for use in laser induced dye thermal transfer
JP2010162846A (en) * 2009-01-19 2010-07-29 Sony Corp Optical information recording medium

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62246590A (en) * 1986-04-17 1987-10-27 Mitsubishi Chem Ind Ltd Dithiophenolate based complex and optical recording medium containing said complex
JPH0326593A (en) * 1989-06-16 1991-02-05 Eastman Kodak Co Infrared ray absorbing squaleirylium dye for dye donating element which is used for laser induction dye heat transfer
JPH0512156B2 (en) * 1989-06-16 1993-02-17 Eastman Kodak Co
JPH0363185A (en) * 1989-06-20 1991-03-19 Eastman Kodak Co Infrared absorption nickel-dithiolene dye complex for dye donor element for use in laser induced dye thermal transfer
JP2010162846A (en) * 2009-01-19 2010-07-29 Sony Corp Optical information recording medium

Also Published As

Publication number Publication date
JPH0531902B2 (en) 1993-05-13

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