JPS62158315A - 光電変換素子の製造法 - Google Patents

光電変換素子の製造法

Info

Publication number
JPS62158315A
JPS62158315A JP60298033A JP29803385A JPS62158315A JP S62158315 A JPS62158315 A JP S62158315A JP 60298033 A JP60298033 A JP 60298033A JP 29803385 A JP29803385 A JP 29803385A JP S62158315 A JPS62158315 A JP S62158315A
Authority
JP
Japan
Prior art keywords
electrode
disilane
conversion element
manufacturing
photoactive layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60298033A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0516655B2 (enrdf_load_stackoverflow
Inventor
Akihisa Matsuda
彰久 松田
Nobuhiro Fukuda
福田　信弘
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsui Toatsu Chemicals Inc
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Mitsui Toatsu Chemicals Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology, Mitsui Toatsu Chemicals Inc filed Critical Agency of Industrial Science and Technology
Priority to JP60298033A priority Critical patent/JPS62158315A/ja
Publication of JPS62158315A publication Critical patent/JPS62158315A/ja
Publication of JPH0516655B2 publication Critical patent/JPH0516655B2/ja
Granted legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Chemical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)
JP60298033A 1985-12-28 1985-12-28 光電変換素子の製造法 Granted JPS62158315A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60298033A JPS62158315A (ja) 1985-12-28 1985-12-28 光電変換素子の製造法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60298033A JPS62158315A (ja) 1985-12-28 1985-12-28 光電変換素子の製造法

Publications (2)

Publication Number Publication Date
JPS62158315A true JPS62158315A (ja) 1987-07-14
JPH0516655B2 JPH0516655B2 (enrdf_load_stackoverflow) 1993-03-05

Family

ID=17854249

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60298033A Granted JPS62158315A (ja) 1985-12-28 1985-12-28 光電変換素子の製造法

Country Status (1)

Country Link
JP (1) JPS62158315A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPH0516655B2 (enrdf_load_stackoverflow) 1993-03-05

Similar Documents

Publication Publication Date Title
CN103718276B (zh) 使氢化非晶硅和非晶氢化硅合金稳定化的方法
EP0523919B1 (en) Multijunction photovoltaic device and fabrication method
US5736431A (en) Method for producing thin film solar battery
EP1020931A1 (en) Amorphous silicon solar cell
JPH05121338A (ja) 堆積膜形成方法および堆積膜形成装置
JP2008153646A (ja) 半導体素子の製造方法
US4520380A (en) Amorphous semiconductors equivalent to crystalline semiconductors
US6503771B1 (en) Semiconductor photoelectrically sensitive device
US6495392B2 (en) Process for producing a semiconductor device
US4710786A (en) Wide band gap semiconductor alloy material
GB2185758A (en) Method for forming deposited film
US4799968A (en) Photovoltaic device
US7038238B1 (en) Semiconductor device having a non-single crystalline semiconductor layer
EP0077601A2 (en) Photovoltaic semiconductor device
JPS62158315A (ja) 光電変換素子の製造法
JP3181121B2 (ja) 堆積膜形成方法
JP3255903B2 (ja) 堆積膜形成方法および堆積膜形成装置
JPH03101274A (ja) アモルファス太陽電池の製造方法
JPH0262482B2 (enrdf_load_stackoverflow)
Ohashi et al. High performance hydrogenated amorphous silicon solar cells made at a high deposition rate by glow discharge of disilane
JPH0612835B2 (ja) 光電変換素子の製法
JPH04192373A (ja) 光起電力素子
JP2757896B2 (ja) 光起電力装置
JPH02177371A (ja) アモルファス太陽電池の製造方法
JPH0927632A (ja) 光起電力素子及びその製造方法

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term