JPS6214951B2 - - Google Patents
Info
- Publication number
- JPS6214951B2 JPS6214951B2 JP3522278A JP3522278A JPS6214951B2 JP S6214951 B2 JPS6214951 B2 JP S6214951B2 JP 3522278 A JP3522278 A JP 3522278A JP 3522278 A JP3522278 A JP 3522278A JP S6214951 B2 JPS6214951 B2 JP S6214951B2
- Authority
- JP
- Japan
- Prior art keywords
- impurity concentration
- present
- data
- concentration distribution
- effect transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000012535 impurity Substances 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 11
- 230000005669 field effect Effects 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 229910052681 coesite Inorganic materials 0.000 description 6
- 229910052906 cristobalite Inorganic materials 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- 229910052682 stishovite Inorganic materials 0.000 description 6
- 229910052905 tridymite Inorganic materials 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005094 computer simulation Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910008065 Si-SiO Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910006405 Si—SiO Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Landscapes
- Testing Of Individual Semiconductor Devices (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3522278A JPS54127277A (en) | 1978-03-25 | 1978-03-25 | Measurement mehod of characteristics of field effect transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3522278A JPS54127277A (en) | 1978-03-25 | 1978-03-25 | Measurement mehod of characteristics of field effect transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS54127277A JPS54127277A (en) | 1979-10-03 |
| JPS6214951B2 true JPS6214951B2 (enrdf_load_stackoverflow) | 1987-04-04 |
Family
ID=12435808
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3522278A Granted JPS54127277A (en) | 1978-03-25 | 1978-03-25 | Measurement mehod of characteristics of field effect transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54127277A (enrdf_load_stackoverflow) |
-
1978
- 1978-03-25 JP JP3522278A patent/JPS54127277A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS54127277A (en) | 1979-10-03 |
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