JPS6214895B2 - - Google Patents

Info

Publication number
JPS6214895B2
JPS6214895B2 JP18586780A JP18586780A JPS6214895B2 JP S6214895 B2 JPS6214895 B2 JP S6214895B2 JP 18586780 A JP18586780 A JP 18586780A JP 18586780 A JP18586780 A JP 18586780A JP S6214895 B2 JPS6214895 B2 JP S6214895B2
Authority
JP
Japan
Prior art keywords
recording
conductive
film
turntable
recording medium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP18586780A
Other languages
Japanese (ja)
Other versions
JPS57109145A (en
Inventor
Junichiro Ikeuchi
Shuzo Hirahara
Taiji Higashama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP18586780A priority Critical patent/JPS57109145A/en
Publication of JPS57109145A publication Critical patent/JPS57109145A/en
Publication of JPS6214895B2 publication Critical patent/JPS6214895B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B11/00Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor
    • G11B11/08Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by electric charge or by variation of electric resistance or capacitance

Landscapes

  • Optical Record Carriers And Manufacture Thereof (AREA)
  • Rotational Drive Of Disk (AREA)

Description

【発明の詳細な説明】 この発明は、半導体を利用した記録媒体を用い
てビデオ信号、オーデイオ信号等の信号を記録し
再生する装置に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an apparatus for recording and reproducing signals such as video signals and audio signals using a recording medium using a semiconductor.

近年、ビデオ信号を高密度に記録するビデオデ
イスクの開発が進み、注目を集めている。しか
し、従来のビデオデイスクはいずれの方式も再生
専用であり、ユーザーが任意に信号を記録できな
いという問題があつた。
In recent years, the development of video discs that record video signals at high density has progressed and is attracting attention. However, all conventional video disc systems are playback-only, and there is a problem in that the user cannot record signals arbitrarily.

このような問題を解決するため、半導体を利用
した記録媒体を用いて、ビデオ信号等を高密度に
かつ任意に記録できる方式が発明者らによつて提
案されている。
In order to solve these problems, the inventors have proposed a system that can arbitrarily record video signals and the like at high density using a recording medium using a semiconductor.

第1図はこの方式の信号記録再生装置の概要を
示したもので、記録媒体をNOS構造とした場合
の例である。すなわち、記録媒体1はSi基板のよ
うな半導体基板2上に、電荷蓄積機能を有する絶
縁体膜として、SiO2膜3を数十Å,Si3N4膜4を
数百Å程度の厚さに積層形成したもので、全体と
して円形のデイスク状に構成され、円形の導電性
ターンテーブル5上に半導体基板2の裏面を下に
して載置固定されている。
FIG. 1 shows an outline of a signal recording and reproducing apparatus of this type, and is an example in which the recording medium has an NOS structure. That is, the recording medium 1 has a SiO 2 film 3 of several tens of angstroms thick and an Si 3 N 4 film 4 of several hundred angstroms thick as an insulating film having a charge storage function on a semiconductor substrate 2 such as a Si substrate. The semiconductor substrate 2 is laminated and formed into a circular disk shape as a whole, and is placed and fixed on a circular conductive turntable 5 with the back surface of the semiconductor substrate 2 facing down.

信号記録時には、サフアイヤのような絶縁性基
体5aの側面上に薄い電極5bを形成した導電性
ヘツド5の先端をSi3N4膜4の表面に接触させ、
これを矢印で示すように相対的に移動させる。実
際には、記録媒体1をターンテーブル5と共に回
転させる。そして、導電性ヘツド6とターンテー
ブル5との間、つまり記録媒体1の厚み方向に例
えば“1”,“0”2値にデイジタル化された記録
信号電圧7を印加する。
During signal recording, the tip of the conductive head 5, which has a thin electrode 5b formed on the side surface of an insulating substrate 5a such as sapphire, is brought into contact with the surface of the Si 3 N 4 film 4.
Move this relatively as shown by the arrow. Actually, the recording medium 1 is rotated together with the turntable 5. Then, a recording signal voltage 7 digitized into binary values of "1" and "0", for example, is applied between the conductive head 6 and the turntable 5, that is, in the thickness direction of the recording medium 1.

こうすると、記録信号電圧7による電界によつ
て、半導体基板2中の電荷がトンネル効果によつ
てSi3N4膜4中にトラツプされ、蓄積される。こ
の結果、半導体基板2に記録信号電圧7の変化、
つまりSi3N4膜4の電荷蓄積状態に対応して空乏
層8が形成される。例えば記録信号電圧7がデイ
ジタル化されている場合は、これに応じてSi3N4
膜4中に電荷が選択的に蓄積され、半導体基板2
にはSi3N4膜4の電荷が蓄積されている領域の直
下にのみ空乏層8ができる。
In this way, due to the electric field generated by the recording signal voltage 7, charges in the semiconductor substrate 2 are trapped and accumulated in the Si 3 N 4 film 4 by a tunnel effect. As a result, a change in the recording signal voltage 7 on the semiconductor substrate 2,
That is, the depletion layer 8 is formed corresponding to the charge accumulation state of the Si 3 N 4 film 4. For example, if the recording signal voltage 7 is digitized, Si 3 N 4
Charges are selectively accumulated in the film 4 and the semiconductor substrate 2
A depletion layer 8 is formed only directly under the region of the Si 3 N 4 film 4 where charges are accumulated.

一方、このようにして記録された信号の再生
は、導電性ヘツド6をSi3N4膜4の表面に接触さ
せ、これを記録トラツクに沿つて相対的に移動さ
せながら、このヘツド6を通して空乏層8による
記録媒体1の厚み方向の静電容量の変化を検出す
ることによつて行なう。この静電容量の変化を電
気信号として検出する手段としては、例えば共振
回路を利用するものが適当である。
On the other hand, in order to reproduce the signal recorded in this way, the conductive head 6 is brought into contact with the surface of the Si 3 N 4 film 4, and while it is relatively moved along the recording track, the depletion is transmitted through the head 6. This is done by detecting the change in capacitance in the thickness direction of the recording medium 1 due to the layer 8. As a means for detecting this change in capacitance as an electrical signal, it is appropriate to use, for example, a resonant circuit.

ところで上記の場合、導電性ターンテーブル5
上への記録媒体1の固定は、機械的手段または接
着剤あるいはエアチヤツクによつて行なわれる
が、その場合記録媒体1とターンテーブル5との
間の間隙の不均一が生じることは避けられない。
この結果、記録信号電圧7による電界分布が上記
間隙の不均一の影響を受けることになり、再現性
の良い記録を行なうことができない。また、この
間隙の不均一は、当然再生時における静電容量の
検出にも影響を与えることになり、従つてS/N
の良い正しい再生を行なうことが難しくなる。
By the way, in the above case, the conductive turntable 5
The recording medium 1 is fixed onto the turntable 5 by mechanical means, adhesive, or an air chuck, but in this case it is inevitable that the gap between the recording medium 1 and the turntable 5 will be uneven.
As a result, the electric field distribution due to the recording signal voltage 7 is affected by the non-uniformity of the gap, making it impossible to perform recording with good reproducibility. Also, this non-uniformity of the gap naturally affects the detection of capacitance during playback, and therefore the S/N
It becomes difficult to perform good and correct reproduction.

この発明の目的は、半導体を利用した記録媒体
とそれを載置固定する導電性ターンテーブルとの
間の間隙の不均一による影響のない良好な記録,
再生を行なうことができる信号記録再生装置を提
供することにある。
An object of the present invention is to achieve good recording without being affected by uneven gaps between a recording medium using a semiconductor and a conductive turntable on which it is placed and fixed.
It is an object of the present invention to provide a signal recording and reproducing device capable of performing reproduction.

この発明は上記目的を達成するため、半導体基
板上に電荷蓄積機能を有する絶縁体膜を形成した
デイスク状の記録媒体を回転させ、上記絶縁体膜
表面に導電性ヘツドを接触させて信号の記録およ
び再生を行なう装置において、前記信号の記録お
よび再生時に前記記録媒体を導電性ターンテーブ
ル上に載置固定して回転させ、かつ前記半導体基
板の該導電性ターンテーブル側の面上に導電体膜
または低抵抗膜を形成したことを特徴とする。
In order to achieve the above object, the present invention rotates a disk-shaped recording medium in which an insulating film having a charge storage function is formed on a semiconductor substrate, and records signals by bringing a conductive head into contact with the surface of the insulating film. and a device for reproducing, in which the recording medium is mounted and fixed on a conductive turntable and rotated during recording and reproduction of the signal, and a conductive material film is provided on the surface of the semiconductor substrate on the conductive turntable side. Alternatively, it is characterized by forming a low resistance film.

以下、この発明を実施例により詳細に説明す
る。
Hereinafter, this invention will be explained in detail with reference to Examples.

第2図はこの発明の一実施例を示したもので、
記録媒体1の半導体基板2の裏面に導電体膜9例
えばアルミ膜を蒸着、スパツタあるいはイオンプ
レーテイングその他の方法により被着形成したこ
とが特徴である。そして、記録媒体1は導電体膜
9を下側にして導電性ターンテーブル5上に載置
され、金具10または接着剤あるいはエアチエツ
クにより固定される。ターンテーブル5はモータ
によつて回転駆動される。信号記録時にはターン
テーブル5の回転によつて記録媒体1に対し相対
的に移動する導電性ヘツド6とターンテーブル5
との間に記録信号電圧7が印加され、信号再生時
にはこれらの間に静電容量検出方式による再生回
路が接続されることになる。
FIG. 2 shows an embodiment of this invention.
A feature is that a conductive film 9, such as an aluminum film, is formed on the back surface of the semiconductor substrate 2 of the recording medium 1 by vapor deposition, sputtering, ion plating, or other methods. Then, the recording medium 1 is placed on the conductive turntable 5 with the conductive film 9 facing downward, and fixed by a metal fitting 10, an adhesive, or an air check. The turntable 5 is rotationally driven by a motor. During signal recording, the conductive head 6 and the turntable 5 move relative to the recording medium 1 as the turntable 5 rotates.
A recording signal voltage 7 is applied between them, and a reproducing circuit using a capacitance detection method is connected between them during signal reproduction.

このように、半導体基板2のターンテーブル5
側の面に導電体膜9を形成すれば、記録媒体1と
ターンテーブル5との間の間隙が不均一であつて
も、半導体基板2の裏面は同一電位に保たれるこ
とから、記録信号電圧7による記録媒体1内での
電界分布は上記間隙の不均一の影響を受けること
がない。従つて、再現性の高い良好な記録を行な
うことができる。また、再生時においても再生回
路で検出される静電容量が上記間隙の不均一の影
響を受けることが少なくなり、良好な再生を行な
うことが可能である。
In this way, the turntable 5 on the semiconductor substrate 2
By forming the conductive film 9 on the side surface, even if the gap between the recording medium 1 and the turntable 5 is uneven, the back surface of the semiconductor substrate 2 is kept at the same potential, so that the recording signal The electric field distribution within the recording medium 1 due to the voltage 7 is not affected by the non-uniformity of the gap. Therefore, good recording with high reproducibility can be performed. Further, even during reproduction, the electrostatic capacitance detected by the reproduction circuit is less affected by the non-uniformity of the gap, making it possible to perform good reproduction.

さらに、この発明によればターンテーブル5と
して導電性のものを用いているので、導電性ヘツ
ド6および導電性ターンテーブル5を通して記録
媒体1と記録または再生回路との電気的接続を確
保することができる。すなわち、ターンテーブル
が非導電性であるとすると、記録および再生に当
たつて導電体膜9と記録再生回路との電気的接続
を達成するためには、導電体膜9にスリツプリン
グ等を接触させるという工夫が必要となり、実用
上困難な構造となつてしまうが、ターンテーブル
5が導電性であれば、ターンテーブルは通常筐体
等と接続されて接地電位に保持されるので、スリ
ツプリングのような煩雑な手段を用いることな
く、導電体膜9と記録再生回路との電気的接続を
容易に得ることができる。
Further, according to the present invention, since a conductive material is used as the turntable 5, it is possible to ensure electrical connection between the recording medium 1 and the recording or reproducing circuit through the conductive head 6 and the conductive turntable 5. can. That is, assuming that the turntable is non-conductive, in order to achieve electrical connection between the conductive film 9 and the recording/reproducing circuit during recording and reproduction, it is necessary to contact the conductive film 9 with a slip ring or the like. However, if the turntable 5 is conductive, the turntable is normally connected to the housing and held at ground potential, so the slip ring Electrical connection between the conductive film 9 and the recording/reproducing circuit can be easily obtained without using such complicated means.

なお、導電体膜9は半導体基板2より電気抵抗
が十分小さい低抵抗膜であつても、同様の効果が
得られる。
Note that even if the conductive film 9 is a low-resistance film whose electrical resistance is sufficiently lower than that of the semiconductor substrate 2, the same effect can be obtained.

第3図にこの発明の他の実施例を示す。この実
施例ではターンテーブル5は凸形に形成され、導
電体膜9は中央部9aのみがターンテーブル5に
接触している。導電体膜9が十分厚く形成されて
いれば、このように導電体膜9が部分的にターン
テーブル5に接触していても、強度等の点で問題
はない。そして、導電体膜9の周辺部9bは、フ
オトエツチングなどにより特定のパターン、例え
ば鋸歯状にパターン化されている。光検出器11
はこの導電体膜9の周辺部9bのパターンを光反
射率の変化として検出し、検出信号を得る。従つ
て、この検出信号を用いれば、記録媒体1の回転
速度のサーボ制御や記録時における最初に記録す
べきトラツク位置の決定、あるいは最初に記録さ
れたトラツクのサーチ、トラツキング制御等各種
の制御を行なうことができる。
FIG. 3 shows another embodiment of the invention. In this embodiment, the turntable 5 is formed in a convex shape, and only the central portion 9a of the conductor film 9 is in contact with the turntable 5. As long as the conductive film 9 is formed sufficiently thick, even if the conductive film 9 partially contacts the turntable 5 like this, there is no problem in terms of strength or the like. The peripheral portion 9b of the conductor film 9 is patterned into a specific pattern, for example, a sawtooth pattern, by photoetching or the like. Photodetector 11
detects the pattern of the peripheral portion 9b of the conductor film 9 as a change in light reflectance to obtain a detection signal. Therefore, by using this detection signal, various controls such as servo control of the rotational speed of the recording medium 1, determination of the first track position to be recorded during recording, search for the first recorded track, tracking control, etc. can be performed. can be done.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は半導体を利用した記録媒体を用いた信
号記録再生装置の概要を示す図、第2図はこの発
明の一実施例の断面図、第3図a,bはこの発明
の他の実施例の断面図および要部平面図である。 1……記録媒体、2……半導体基板、3……
SiO2膜、4……Si3N4膜、5……導電性ターンテ
ーブル、6……導電性ヘツド、7……記録信号電
圧、8……空乏層、9……導電体膜(低抵抗体
膜)。
Fig. 1 is a diagram showing an outline of a signal recording/reproducing device using a recording medium using a semiconductor, Fig. 2 is a sectional view of one embodiment of the invention, and Figs. 3a and b are other embodiments of the invention. FIG. 2 is a cross-sectional view and a plan view of a main part of an example. 1...Recording medium, 2...Semiconductor substrate, 3...
SiO 2 film, 4... Si 3 N 4 film, 5... Conductive turntable, 6... Conductive head, 7... Recording signal voltage, 8... Depletion layer, 9... Conductor film (low resistance body membranes).

Claims (1)

【特許請求の範囲】[Claims] 1 半導体基板上に電荷蓄積機能を有する絶縁体
膜を形成したデイスク状の記録媒体を回転させ、
上記絶縁体膜表面に導電性ヘツドを接触させて信
号の記録および再生を行なう装置において、前記
信号の記録および再生時に前記記録媒体を導電性
ターンテーブル上に載置固定して回転させ、かつ
前記半導体基板の該導電性ターンテーブル側の面
上に導電体膜または低抵抗膜を形成したことを特
徴とする信号記録再生装置。
1. Rotating a disk-shaped recording medium in which an insulating film having a charge storage function is formed on a semiconductor substrate,
In the device for recording and reproducing signals by bringing a conductive head into contact with the surface of the insulating film, the recording medium is mounted and fixed on a conductive turntable and rotated when recording and reproducing the signal, and A signal recording/reproducing device characterized in that a conductive film or a low resistance film is formed on the surface of the semiconductor substrate on the conductive turntable side.
JP18586780A 1980-12-26 1980-12-26 Signal recording and reproducing device Granted JPS57109145A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18586780A JPS57109145A (en) 1980-12-26 1980-12-26 Signal recording and reproducing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18586780A JPS57109145A (en) 1980-12-26 1980-12-26 Signal recording and reproducing device

Publications (2)

Publication Number Publication Date
JPS57109145A JPS57109145A (en) 1982-07-07
JPS6214895B2 true JPS6214895B2 (en) 1987-04-04

Family

ID=16178260

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18586780A Granted JPS57109145A (en) 1980-12-26 1980-12-26 Signal recording and reproducing device

Country Status (1)

Country Link
JP (1) JPS57109145A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0432870Y2 (en) * 1986-04-14 1992-08-06

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0432870Y2 (en) * 1986-04-14 1992-08-06

Also Published As

Publication number Publication date
JPS57109145A (en) 1982-07-07

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